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JP2005199269A5 - - Google Patents

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Publication number
JP2005199269A5
JP2005199269A5 JP2004364373A JP2004364373A JP2005199269A5 JP 2005199269 A5 JP2005199269 A5 JP 2005199269A5 JP 2004364373 A JP2004364373 A JP 2004364373A JP 2004364373 A JP2004364373 A JP 2004364373A JP 2005199269 A5 JP2005199269 A5 JP 2005199269A5
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Japan
Prior art keywords
composition
shaping
shape
display device
manufacturing
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JP2004364373A
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Japanese (ja)
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JP2005199269A (en
JP4583904B2 (en
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Priority to JP2004364373A priority Critical patent/JP4583904B2/en
Priority claimed from JP2004364373A external-priority patent/JP4583904B2/en
Publication of JP2005199269A publication Critical patent/JP2005199269A/en
Publication of JP2005199269A5 publication Critical patent/JP2005199269A5/ja
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Publication of JP4583904B2 publication Critical patent/JP4583904B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (20)

絶縁性材料または導電性材料を含む組成物を吐出する吐出手段と、
前記組成物が被形成領域に付着する前に、前記組成物の形状を整形する整形手段とを有し、
前記整形手段が、前記吐出手段と前記被形成領域との間に設けられることを特徴とする液滴吐出装置。
A discharge means for discharging a composition containing an insulating material or a conductive material ;
Shaping means for shaping the shape of the composition before the composition adheres to the formation area;
The liquid droplet ejection apparatus, wherein the shaping unit is provided between the ejection unit and the formation region.
絶縁性材料または導電性材料を含む組成物を吐出する吐出手段と、
前記組成物が被形成領域に付着した後に、前記組成物の形状を整形する整形手段とを有することを特徴とする液滴吐出装置。
A discharge means for discharging a composition containing an insulating material or a conductive material ;
A liquid droplet ejection apparatus comprising: a shaping unit that shapes the shape of the composition after the composition has adhered to the formation region.
請求項1または請求項2において、前記整形手段は前記液滴吐出手段の吐出口に接して設けられることを特徴とする液滴吐出装置。   3. The droplet discharge device according to claim 1, wherein the shaping unit is provided in contact with the discharge port of the droplet discharge unit. 請求項1乃至3のいずれか一項において、前記整形手段は整形部を有し、
前記整形部の形状は針状であることを特徴とする液滴吐出装置。
In any 1 paragraph of Claims 1 thru / or 3, The above-mentioned shaping means has a shaping part,
The shape of the shaping part is a needle-like shape.
請求項1乃至3のいずれか一項において、前記整形手段は整形部を有し、
前記整形部の形状は柱状または板状であることを特徴とする液滴吐出装置。
In any 1 paragraph of Claims 1 thru / or 3, The above-mentioned shaping means has a shaping part,
The shape of the shaping part is a columnar shape or a plate shape.
請求項1乃至3のいずれか一項において、前記整形手段は整形部を有し、
前記整形部の形状は管状であることを特徴とする液滴吐出装置。
In any 1 paragraph of Claims 1 thru / or 3, The above-mentioned shaping means has a shaping part,
The shape of the said shaping part is a tubular shape, The droplet discharge apparatus characterized by the above-mentioned.
絶縁性材料または導電性材料を含む組成物を被形成領域に向かって吐出し、
前記組成物が前記被形成領域に付着する前に、前記組成物の形状を整形することによって、選択的にパターンを形成することを特徴とするパターン形成方法。
A composition containing an insulating material or a conductive material is discharged toward a formation region;
A pattern forming method, wherein a pattern is selectively formed by shaping a shape of the composition before the composition adheres to the formation region.
絶縁性材料または導電性材料を含む組成物を被形成領域に向かって吐出し、
前記組成物が前記被形成領域に付着した後であって、かつ固化する前に、前記組成物の形状を整形することによって、選択的にパターンを形成することを特徴とするパターン形成方法。
A composition containing an insulating material or a conductive material is discharged toward a formation region;
A pattern forming method comprising selectively forming a pattern by shaping the composition after the composition is attached to the formation region and before solidifying.
請求項7または請求項8において、前記組成物の形状を、針状の整形物によって整形することを特徴とするパターン形成方法。   9. The pattern forming method according to claim 7, wherein the shape of the composition is shaped by a needle-shaped shaped product. 請求項7または請求項8において、前記組成物の形状を、柱状または板状の整形物によって整形することを特徴とするパターン形成方法。   9. The pattern forming method according to claim 7, wherein the shape of the composition is shaped by a columnar or plate shaped shaped product. 請求項7乃至10のいずれか一項において、前記導電性材料として、銀、金、銅、又はインジウム錫酸化物を用いることを特徴とするパターン形成方法。 According to any one of claims 7 to 10, as the conductive material, silver, gold, pattern forming method which is characterized in that there use copper, or indium tin oxide. 半導体層、配線及び電極を有し、
導電性材料を含む組成物を被形成領域上に吐出し、前記組成物の形状の一部を整形し、前記組成物を選択的に拡張することによって、前記配線及び前記電極を形成することを特徴とする表示装置の作製方法。
Having a semiconductor layer, wiring and electrodes,
Forming the wiring and the electrode by discharging a composition containing a conductive material onto a formation region, shaping a part of the shape of the composition, and selectively expanding the composition; A method for manufacturing a display device.
請求項12において、針状の整形物によって前記組成物の形状の一部を整形することを特徴とする表示装置の作製方法。   The method for manufacturing a display device according to claim 12, wherein a part of the shape of the composition is shaped by a needle-like shaped article. 請求項12または請求項13において、前記導電性材料として、銀、金、銅、又はインジウム錫酸化物を用いることを特徴とする表示装置の作製方法。 According to claim 12 or claim 13, as the conductive material, silver, gold, a method for manufacturing a display device, characterized in that there use copper, or indium tin oxide. 請求項12乃至14のいずれか一項において、前記電極はゲート電極層であり、前記ゲート電極層のチャネル方向の幅は0.3μm以上10μm以下となるように形成することを特徴とする表示装置の作製方法。   15. The display device according to claim 12, wherein the electrode is a gate electrode layer, and the width of the gate electrode layer in a channel direction is 0.3 μm or more and 10 μm or less. Manufacturing method. 請求項12乃至15のいずれか一項において、前記電極と前記半導体層の交差する領域のチャネル方向の長さが0.3μm以上10μm以下となるように前記電極を形成することを特徴とする表示装置の作製方法。   16. The display according to claim 12, wherein the electrode is formed so that a length in a channel direction of a region where the electrode and the semiconductor layer intersect is 0.3 μm or more and 10 μm or less. Device fabrication method. 請求項12乃至16のいずれか一項において、前記半導体層は、水素又はハロゲン元素を含むガスにより形成された非単結晶半導体であることを特徴とする表示装置の作製方法。   17. The method for manufacturing a display device according to claim 12, wherein the semiconductor layer is a non-single-crystal semiconductor formed using a gas containing hydrogen or a halogen element. 請求項12乃至17のいずれか一項において、前記半導体層は、水素又はハロゲン元素を含むガスにより形成されたセミアモルファス半導体であることを特徴とする表示装置の作製方法。   18. The method for manufacturing a display device according to claim 12, wherein the semiconductor layer is a semi-amorphous semiconductor formed of a gas containing hydrogen or a halogen element. 請求項12乃至17のいずれか一項において、前記半導体層は、水素とハロゲン元素を含むガスにより形成された多結晶半導体であることを特徴とする表示装置の作製方法。   18. The method for manufacturing a display device according to claim 12, wherein the semiconductor layer is a polycrystalline semiconductor formed using a gas containing hydrogen and a halogen element. 請求項12乃至19のいずれか一項の方法により作製された表示装置で、表示画面を構成したことを特徴とするテレビジョン装置。   A television device comprising a display screen produced by the display device manufactured by the method according to any one of claims 12 to 19.
JP2004364373A 2003-12-17 2004-12-16 Method for manufacturing display device Expired - Fee Related JP4583904B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004364373A JP4583904B2 (en) 2003-12-17 2004-12-16 Method for manufacturing display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003419923 2003-12-17
JP2004364373A JP4583904B2 (en) 2003-12-17 2004-12-16 Method for manufacturing display device

Publications (3)

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JP2005199269A JP2005199269A (en) 2005-07-28
JP2005199269A5 true JP2005199269A5 (en) 2008-02-07
JP4583904B2 JP4583904B2 (en) 2010-11-17

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