JP2003163337A5

JP2003163337A5 -

Info

Publication number: JP2003163337A5
Application number: JP2002233745A
Authority: JP
Filing date: 2002-08-09
Publication date: 2005-10-20
Anticipated expiration: 2022-08-09

Claims

A first material layer having a tensile stress, to form a layer to be peeled to the first of the second material layer and is provided on a substrate having a compressive stress formed in contact with the material layer,
Peeling method characterized by peeling the substrate in a layer or in the interface of the second material layer by physical means.

A first material layer having a compressive stress, after which the second material layer having a compressive stress formed in contact with the first material layer is formed to be peeled layer over a substrate provided with heating By performing treatment or laser light irradiation, the first material layer is changed to a film having tensile stress,
Peeling method characterized by peeling the substrate in a layer or in the interface of the second material layer by physical means.

A first material layer having a tensile stress, to form a layer to be peeled to the first of the second material layer and is provided on a substrate having a compressive stress formed in contact with the material layer,
A method of peeling, wherein after bonding a support to the layer to be peeled off, the substrate is peeled off in the layer or interface of the second material layer by physical means.

A first material layer having a compressive stress, after which the second material layer having a compressive stress formed in contact with the first material layer is formed to be peeled layer over a substrate provided with, By performing heat treatment or laser light irradiation, the first material layer is changed to a film having a tensile stress,
A method of peeling, wherein after bonding a support to the layer to be peeled off, the substrate is peeled off in the layer or interface of the second material layer by physical means.

According to claim 3 or 4, prior to bonding said support, stripping wherein the TURMERIC row irradiation heat treatment or laser light.

In any one of claims 1 to 4, before peeling the substrate, peeling wherein the TURMERIC row irradiation heat treatment or laser light.

Forming a first material layer having tensile stress on a substrate;
Forming a second material layer having a compressive stress in contact with the first material layer;
Forming a layer to be peeled on the second material layer;
And a step of peeling the substrate in a layer of the second material layer or at an interface by a physical means.

Forming a first material layer having compressive stress on the substrate;
Forming a second material layer having a compressive stress in contact with the first material layer;
A step of changing the first material layer into a film having a tensile stress by performing heat treatment or laser light irradiation after forming a layer to be peeled on the second material layer;
And a step of peeling the substrate in a layer of the second material layer or at an interface by a physical means.

9. The method for manufacturing a semiconductor device according to claim 7, wherein the layer to be peeled is a layer including an element.

Forming a first material layer having tensile stress on a substrate;
Forming a second material layer having a compressive stress in contact with the first material layer;
Forming an insulating layer on the second material layer;
Forming an element on the insulating layer;
After bonding the support to the device, a step of removing the substrate in a layer or in the interface of the second material layer by physical means,
The method for manufacturing a semiconductor device according to claim contact Chakusu Rukoto transcripts in the insulating layer or the second material layer.

Forming a first material layer having compressive stress on a substrate;
Forming a second material layer having a compressive stress in contact with the first material layer;
Forming an insulating layer on the second material layer;
A step of changing the first material layer into a film having a tensile stress by performing heat treatment or laser light irradiation after forming an element on the insulating layer;
After bonding the support to the device, a step of removing the substrate in a layer or in the interface of the second material layer by physical means,
The method for manufacturing a semiconductor device according to claim contact Chakusu Rukoto transcripts in the insulating layer or the second material layer.

12. The method for manufacturing a semiconductor device according to claim 10 , wherein the support is a film substrate or a base material.

In any one of claims 10 to 12, wherein the transfer member, a method for manufacturing a semiconductor device which is a film substrate or substrate.

In any one of claims 10 to 13, prior to bonding the support, a method for manufacturing a semiconductor device comprising the TURMERIC row irradiation heat treatment or laser light.

In any one of claims 10 to 13, before peeling the substrate, a method for manufacturing a semiconductor device comprising the TURMERIC row irradiation heat treatment or laser light.

In any one of claims 10 to 15, wherein the support is a counter substrate, the element has a pixel electrode, the pixel electrode, the liquid crystal material is filled between the counter substrate A method for manufacturing a semiconductor device.

16. The method for manufacturing a semiconductor device according to claim 10 , wherein the support is a sealing material, and the element is a light-emitting element.

In any one of claims 9 to 17, wherein the device is a method for manufacturing a semiconductor device which is a thin film transistor.