JP2003257890A - Method for filling substance, method for forming film, device and its fabricating method - Google Patents
Method for filling substance, method for forming film, device and its fabricating methodInfo
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- JP2003257890A JP2003257890A JP2002061740A JP2002061740A JP2003257890A JP 2003257890 A JP2003257890 A JP 2003257890A JP 2002061740 A JP2002061740 A JP 2002061740A JP 2002061740 A JP2002061740 A JP 2002061740A JP 2003257890 A JP2003257890 A JP 2003257890A
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- Prior art keywords
- liquid
- recess
- film
- processed
- supply means
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、物質充填方法、被
膜形成方法、デバイスおよびデバイスの製造方法に関す
るものである。TECHNICAL FIELD The present invention relates to a material filling method, a film forming method, a device and a device manufacturing method.
【０００２】[0002]
【従来の技術】一般に半導体装置は、基板表面に複数の
半導体素子を形成し、その上層部に配線パターンを形成
して製造されている。図２（１）では、シリコン基板の
表面に、半導体素子としてＭＯＳトランジスタ１２が形
成されている。また、その表面には絶縁膜１５として二
酸化ケイ素被膜が形成されている。そして、この絶縁膜
１５の表面に、導電性材料であるＩＴＯにより配線パタ
ーンを形成する。ここで、配線パターンからゲート電極
１４への導通を確保する必要があるため、絶縁膜１５の
表面からゲート電極１４にかけて、直径１μｍ程度の微
細凹部（コンタクトホール）２０が形成されている。そ
こで、図２（２）に示すように、その微細凹部２０にＩ
ＴＯを充填しつつ、二酸化ケイ素被膜の表面にＩＴＯに
よる配線パターン２８を形成する。2. Description of the Related Art Generally, a semiconductor device is manufactured by forming a plurality of semiconductor elements on a surface of a substrate and forming a wiring pattern on an upper layer thereof. In FIG. 2A, the MOS transistor 12 is formed as a semiconductor element on the surface of the silicon substrate. Further, a silicon dioxide film is formed as an insulating film 15 on the surface thereof. Then, a wiring pattern is formed on the surface of the insulating film 15 with ITO, which is a conductive material. Here, since it is necessary to secure conduction from the wiring pattern to the gate electrode 14, a minute recess (contact hole) 20 having a diameter of about 1 μm is formed from the surface of the insulating film 15 to the gate electrode 14. Therefore, as shown in FIG.
A wiring pattern 28 made of ITO is formed on the surface of the silicon dioxide film while being filled with TO.
【０００３】図５及び図６に従来の配線パターン形成方
法の説明図を示す。なお、図５及び図６の各図は、図２
（１）におけるＡ部の拡大図である。従来、微細凹部に
導電性材料を充填するには、充填材料を微細凹部の直径
より小さく加工して、微細凹部に注入する必要があると
考えられていた。そこで、図５（１）に示す微細凹部２
０に対し、図５（２）に示すように、スパッタによりＩ
ＴＯを微粒子化して充填していた。なおこれと同時に、
二酸化ケイ素被膜の表面には、ＩＴＯ被膜２７が形成さ
れる。そこで、図５（３）に示すように、ＣＭＰ等によ
りＩＴＯ被膜２７の表面を研磨する。5 and 6 are explanatory views of a conventional wiring pattern forming method. Note that each of FIGS. 5 and 6 corresponds to FIG.
It is an enlarged view of the A section in (1). Conventionally, it has been considered that in order to fill the conductive material in the fine recesses, it is necessary to process the filling material to have a diameter smaller than that of the fine recesses and inject the filler material into the fine recesses. Therefore, the fine recess 2 shown in FIG.
In contrast to 0, as shown in FIG.
The TO was made into fine particles and filled. At the same time,
The ITO film 27 is formed on the surface of the silicon dioxide film. Therefore, as shown in FIG. 5C, the surface of the ITO coating 27 is polished by CMP or the like.
【０００４】次に、ＩＴＯ被膜２７から配線パターン２
８を形成する。具体的には、図６（１）に示すように、
ＩＴＯ被膜２７の表面にレジスト３０を塗布し、フォト
リソグラフィによりレジスト３０をパターニングする。
次に、図６（２）に示すように、パターニングしたレジ
スト３０をマスクとして、ＩＴＯ被膜２７をエッチング
する。そして、図６（３）に示すようにレジスト３０を
除去すれば、ＩＴＯによる配線パターン２８が形成され
る。Next, from the ITO film 27 to the wiring pattern 2
8 is formed. Specifically, as shown in FIG. 6 (1),
A resist 30 is applied to the surface of the ITO film 27, and the resist 30 is patterned by photolithography.
Next, as shown in FIG. 6B, the ITO film 27 is etched using the patterned resist 30 as a mask. Then, by removing the resist 30 as shown in FIG. 6C, the wiring pattern 28 made of ITO is formed.
【０００５】[0005]
【発明が解決しようとする課題】上記方法では、スパッ
タによりＩＴＯ被膜を形成するが、スパッタは真空装置
を必要とするため、多くの製造コストを必要とするとい
う問題がある。また上記方法では、微細凹部内にＩＴＯ
材料を充填するため、比較的長時間のスパッタを行う必
要がある。すると、微細凹部以外の被処理部材表面に
は、必要厚さ以上のＩＴＯ被膜が形成されることにな
り、ＣＭＰ（化学機械研磨）等により平坦化する作業が
必要となる。このＣＭＰに用いる研磨材は高価であるこ
とから、結局多くの製造コストが必要になるという問題
がある。In the above method, the ITO film is formed by sputtering, but since sputtering requires a vacuum device, there is a problem that it requires a large manufacturing cost. Further, in the above method, ITO is formed in the fine recesses.
In order to fill the material, it is necessary to perform sputtering for a relatively long time. Then, an ITO film having a required thickness or more is formed on the surface of the member to be processed other than the fine recesses, and the work of flattening by CMP (chemical mechanical polishing) or the like is required. Since the abrasive used for this CMP is expensive, there is a problem that a large manufacturing cost is eventually required.
【０００６】さらに上記方法では、ＩＴＯ被膜をエッチ
ングすることによりパターニングを行う必要があるが、
ＩＴＯ被膜のエッチングは困難である。すなわち、フッ
素や塩素を含むガスによるエッチングができないため、
有機金属やヨウ素等によるエッチングを行う必要があ
り、多くの製造コストを必要とするという問題がある。Further, in the above method, it is necessary to perform patterning by etching the ITO film,
Etching of ITO coatings is difficult. That is, since etching with a gas containing fluorine or chlorine cannot be performed,
Since it is necessary to perform etching with an organic metal, iodine, etc., there is a problem that a large manufacturing cost is required.
【０００７】本発明は上記問題点に着目し、製造コスト
を低減することが可能な、物質充填方法及び膜形成方法
の提供を目的とする。また、凹部の洗浄又は封止が可能
な、物質充填方法及び膜形成方法の提供を目的とする。
加えて、上記の物質充填方法及び膜形成方法を使用して
製造したデバイス、およびその製造方法の提供を目的と
する。It is an object of the present invention to provide a substance filling method and a film forming method capable of reducing the manufacturing cost by paying attention to the above problems. Another object of the present invention is to provide a substance filling method and a film forming method capable of cleaning or sealing the recess.
In addition, it is an object of the present invention to provide a device manufactured by using the substance filling method and the film forming method described above, and a manufacturing method thereof.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、本発明に係る物質充填方法は、凹部の開口部を液体
で覆う工程と、前記凹部内の気体を前記液体中に溶解さ
せ、前記凹部内に前記液体を充填する工程と、を有する
構成とした。これにより、液体を微粒子化することなく
凹部内に充填できるので、製造コストを低減することが
できる。なお、凹部内の気体をすべて溶解可能な量の液
体を供給し、一回で凹部内に液体を充填することも可能
であり、少量の液体を複数回にわたって供給し、複数回
に分けて凹部内に液体を充填することも可能である。In order to achieve the above object, a substance filling method according to the present invention comprises a step of covering an opening of a recess with a liquid, and dissolving gas in the recess into the liquid, And a step of filling the liquid in the recess. As a result, the liquid can be filled into the recess without being made into fine particles, so that the manufacturing cost can be reduced. Note that it is also possible to supply an amount of liquid that can dissolve all the gas in the concave portion and to fill the liquid in the concave portion at once, and to supply a small amount of liquid multiple times and divide the concave portion into multiple times. It is also possible to fill the inside with a liquid.
【０００９】また、凹部を有する被処理部材表面に対し
て液体供給手段により液体を供給する工程と、前記液体
により前記凹部の開口部を覆い、前記凹部内の気体を前
記液体中に溶解させ、前記凹部内に前記液体を充填する
工程と、を有する構成とした。この場合、液体供給手段
により必要量の液体を連続供給することができるので、
製造コストを低減することができる。なお、被処理部材
は、シリコン基板やガラス基板などの他に、凹部を有す
る被膜であってもよい。被膜とは、例えば層間絶縁膜や
パッシベーション、あるいはレジスト等の感光性膜など
である。また、液体供給手段として、スリット型液体供
給手段や、インクジェット等の他の公知の液体吐出装置
などを使用することができる。[0009] Further, a step of supplying a liquid to the surface of the member to be processed having a recess by a liquid supply means, the opening of the recess is covered with the liquid, and the gas in the recess is dissolved in the liquid, And a step of filling the recess with the liquid. In this case, since the required amount of liquid can be continuously supplied by the liquid supply means,
The manufacturing cost can be reduced. The member to be processed may be a coating film having a recess in addition to a silicon substrate or a glass substrate. The film is, for example, an interlayer insulating film, passivation, or a photosensitive film such as a resist. Further, as the liquid supply means, a slit type liquid supply means, another known liquid ejection device such as an ink jet, or the like can be used.
【００１０】なお前記液体は、有機溶媒である構成とし
てもよい。有機溶媒は空気を溶解する性質を有するの
で、凹部内の空気と置換することができる。従って、空
気中での充填作業が可能となり、製造コストを低減する
ことができる。なお前記有機溶媒は、前記凹部内の洗浄
作用を有する構成としてもよい。これにより、凹部内を
洗浄することができる。The liquid may be an organic solvent. Since the organic solvent has a property of dissolving air, it can replace the air in the recess. Therefore, the filling work can be performed in the air, and the manufacturing cost can be reduced. The organic solvent may have a function of cleaning the inside of the recess. As a result, the inside of the recess can be cleaned.
【００１１】なお前記液体は、溶質と溶媒とを含み、前
記凹部内に前記液体を充填した後に、前記液体を加熱し
て前記溶媒を蒸発させることにより、前記凹部内に前記
溶質を充填させる構成としてもよい。また前記溶質は、
導電性材料である構成としてもよい。また前記導電性材
料は、ＩＴＯである構成としてもよい。その他にも、溶
質として、層間絶縁膜やパッシベーション、あるいはレ
ジスト等の感光性膜などの原材料を使用することができ
る。これにより、凹部内に溶質の物質を充填することが
できる。The liquid contains a solute and a solvent, and after filling the liquid in the recess, the liquid is heated to evaporate the solvent to fill the solute in the recess. May be Further, the solute is
The structure may be a conductive material. The conductive material may be ITO. In addition, raw materials such as an interlayer insulating film, passivation, or a photosensitive film such as a resist can be used as the solute. As a result, the solute substance can be filled in the recess.
【００１２】また、前記凹部内に前記液体を充填する前
に、前記凹部を有する前記被処理部材表面を予め撥液処
理する構成としてもよい。被処理部材表面が撥液処理さ
れると前記液体は塗布されないが、凹部内が撥液処理さ
れても、凹部内の気体が前記液体と置換されるので、前
記液体を充填することができる。従って、凹部内のみに
液体を充填することができる。Further, before filling the liquid in the recess, the surface of the member to be processed having the recess may be subjected to liquid repellent treatment in advance. Although the liquid is not applied when the surface of the member to be processed is subjected to the liquid repellent treatment, even if the inside of the concave portion is subjected to the liquid repellent treatment, the gas in the concave portion is replaced with the liquid, so that the liquid can be filled. Therefore, the liquid can be filled only in the recess.
【００１３】一方、本発明に係るデバイスは、請求項１
ないし６のいずれかに記載の物質充填方法を使用して製
造した構成とした。なおデバイスは、半導体デバイスや
電気回路、表示対モジュール、カラーフィルタ、発光素
子などとすることができる。On the other hand, the device according to the present invention comprises:
It was configured to be manufactured by using the substance filling method described in any one of 1 to 6. The device may be a semiconductor device, an electric circuit, a display pair module, a color filter, a light emitting element, or the like.
【００１４】一方、本発明に係る膜形成方法は、被処理
部材表面の凹部内に膜を形成させる膜形成方法におい
て、前記被処理部材の表面に対して、液体供給手段によ
り膜材料と溶媒とを含む液体を供給し、前記凹部内の気
体を溶解可能な前記液体で、前記凹部の開口部を覆い、
前記凹部内の気体を前記液体中に溶解させて、前記凹部
内に前記液体を充填し、前記液体を加熱して前記溶媒を
蒸発させることにより、前記被処理部材表面に前記膜材
料からなる膜を形成する構成とした。On the other hand, the film forming method according to the present invention is a film forming method in which a film is formed in a concave portion on the surface of a member to be processed, and a film material and a solvent are supplied to the surface of the member to be processed by a liquid supply means. Is supplied, and the liquid capable of dissolving the gas in the recess is used to cover the opening of the recess,
A film made of the film material is formed on the surface of the member to be processed by dissolving the gas in the recess in the liquid, filling the liquid in the recess, and heating the liquid to evaporate the solvent. Is formed.
【００１５】これにより、液体を微粒子化することな
く、成膜と同時に凹部内に膜材料を充填することができ
る。なお、液体供給手段により必要量の液体を連続供給
することができる。また、複数の凹部や潜在的な凹部に
対して、効率的に膜材料を充填することができる。従っ
て、製造コストを低減することができる。Thus, the film material can be filled in the recess simultaneously with the film formation without making the liquid into fine particles. The required amount of liquid can be continuously supplied by the liquid supply means. Further, the film material can be efficiently filled in the plurality of recesses and the potential recesses. Therefore, the manufacturing cost can be reduced.
【００１６】なお、前記液体供給手段の液体供給口と前
記被処理部材表面との間の距離を調整することにより、
前記被処理部材表面に前記液体を所望厚さで塗布する構
成としてもよい。また、前記液体供給手段と前記被処理
部材表面とを相対移動させ、前記相対移動の速度を調整
することにより、前記被処理部材表面に前記液体を所望
厚さで塗布する構成としてもよい。また、前記液体供給
手段からの液体供給量を調整することにより、前記被処
理部材表面に前記液体を所望厚さで塗布する構成として
もよい。これらにより、膜表面のＣＭＰ等による研磨加
工が不要となり、製造コストを低減することができる。By adjusting the distance between the liquid supply port of the liquid supply means and the surface of the member to be processed,
The liquid may be applied to the surface of the member to be processed in a desired thickness. Further, the liquid may be applied to the surface of the member to be processed in a desired thickness by relatively moving the liquid supply unit and the surface of the member to be processed and adjusting the speed of the relative movement. Further, the liquid may be applied to the surface of the member to be processed in a desired thickness by adjusting the amount of liquid supplied from the liquid supply means. As a result, polishing processing by CMP or the like on the film surface becomes unnecessary, and the manufacturing cost can be reduced.
【００１７】また、前記被処理部材表面に前記液体を塗
布する前に、前記被処理部材表面における膜形成部分以
外の部分を予め撥液処理する構成としてもよい。また、
前記被処理部材表面に前記液体を塗布する前に、前記被
処理部材表面における膜形成部分を予め親液処理する構
成としてもよい。これにより、膜形成後のエッチングが
不要となり、製造コストを低減することができる。Further, before applying the liquid to the surface of the member to be treated, a portion of the surface of the member to be treated other than the film forming portion may be subjected to liquid repellent treatment in advance. Also,
Before applying the liquid to the surface of the member to be processed, the film forming portion on the surface of the member to be processed may be subjected to lyophilic treatment in advance. This eliminates the need for etching after forming the film, thus reducing the manufacturing cost.
【００１８】なお前記膜材料は、導電性を有する膜材料
である構成としてもよく、ＩＴＯ膜材料である構成とし
てもよい。特に、ＩＴＯ被膜形成後のエッチングが不要
となることで、製造コストを大幅に低減することができ
る。なお前記膜材料は、電気絶縁性を有する膜材料であ
る構成としてもよく、シリコン酸化物膜材料である構成
としてもよい。The film material may be a conductive film material or an ITO film material. In particular, since the etching after forming the ITO film is unnecessary, the manufacturing cost can be significantly reduced. The film material may be a film material having electrical insulation properties, or may be a silicon oxide film material.
【００１９】一方、本発明に係るデバイスは、請求項８
ないし１１のいずれかに記載の物質充填方法を使用して
製造した構成とした。なおデバイスは、半導体デバイス
や電気回路、表示対モジュール、カラーフィルタ、発光
素子などとすることができる。On the other hand, the device according to the present invention comprises:
It was configured to be manufactured by using the substance filling method described in any one of 1 to 11. The device may be a semiconductor device, an electric circuit, a display pair module, a color filter, a light emitting element, or the like.
【００２０】一方、本発明に係るデバイスの製造方法
は、被処理部材の凹部内に液状材料を充填し膜を形成す
るデバイスの製造方法において、前記被処理部材の表面
に対して、液体供給手段により膜材料と溶媒とを含む液
体を供給し、前記液体で、前記凹部の開口部を覆い、前
記凹部内の気体を前記液体中に溶解させて前記凹部内に
前記液体を充填し、前記液体を加熱して前記溶媒を蒸発
させることにより、前記被処理部材表面に前記膜材料か
らなる膜を形成する構成とした。これにより、製造コス
トを削減することができる。On the other hand, the device manufacturing method according to the present invention is a device manufacturing method in which a liquid material is filled in the recesses of a member to be processed to form a film, and liquid supply means is provided on the surface of the member to be processed. A liquid containing a film material and a solvent is supplied by means of the liquid, the opening of the recess is covered with the liquid, the gas in the recess is dissolved in the liquid to fill the liquid in the recess, and the liquid Is heated to evaporate the solvent to form a film made of the film material on the surface of the member to be processed. Thereby, the manufacturing cost can be reduced.
【００２１】[0021]
【発明の実施の形態】本発明に係る物質充填方法、膜形
成方法、デバイスおよびその製造方法の好ましい実施の
形態を、添付図面を用いて詳細に説明する。なお以下に
記載するのは本発明の実施形態の一態様にすぎず、本発
明はこれらに限定されるものではない。BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of a substance filling method, a film forming method, a device and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings. It should be noted that what is described below is only one aspect of the embodiment of the present invention, and the present invention is not limited thereto.
【００２２】最初に、第１実施形態について説明する。
図１に第１実施形態に係る物質充填方法の説明図を示
す。第１実施形態に係る物質充填方法は、微細凹部２を
有する被処理部材１表面に対して、液体供給手段５によ
り液体６を供給しつつ、液体供給手段５と被処理部材１
表面とを相対移動させ、微細凹部２内の気体を溶解可能
な液体６で、微細凹部２の開口部２ａを覆うことによ
り、微細凹部２内の気体を液体６中に溶解させ、微細凹
部２内に液体６を充填するものである。First, the first embodiment will be described.
FIG. 1 shows an explanatory view of the substance filling method according to the first embodiment. In the substance filling method according to the first embodiment, the liquid supply means 5 and the member to be processed 1 are supplied while the liquid 6 is supplied to the surface of the member to be processed 1 having the fine recesses 2 by the liquid supply means 5.
The gas in the fine recess 2 is dissolved in the liquid 6 by moving the surface 6 relative to the surface and covering the opening 2a of the fine recess 2 with the liquid 6 capable of dissolving the gas in the fine recess 2. The inside is filled with the liquid 6.
【００２３】第１実施形態では、被処理部材１に形成さ
れた微細凹部２内に、液体６を充填する。なお、被処理
部材１は、シリコン基板やガラス基板などの他に、微細
凹部を有する被膜であってもよい。被膜とは、例えば層
間絶縁膜やパッシベーション、あるいはレジスト等の感
光性膜などである。微細凹部２の直径は、例えば４μｍ
程度である。また液体６は、微細凹部２内の気体を溶解
可能な物質とし、例えば微細凹部２内の気体が空気であ
る場合には、液体６を有機溶媒とすることができる。有
機溶媒は気体の溶解性がよいので好適であるが、とくに
これに限定されず、例えば水溶液等他の気体溶解性を有
する溶媒を用いてもよい。一方、液体供給手段５とし
て、スリット型液体供給手段を使用する。スリット型液
体供給手段は、紙面の厚さ方向に伸びるスリット状の液
体供給口５ａを有し、その液体供給口５ａから液体６を
連続供給できるように形成されている。なお、液体供給
口５ａの開口幅Ｗは例えば０．３ｍｍ程度であり、その
長さ（奥行き）は例えば１５０〜５００ｍｍ程度であ
る。なお、スリット型液体供給手段に代えて、インクジ
ェットを使用してもよい。In the first embodiment, the liquid 6 is filled in the fine recesses 2 formed in the member 1 to be processed. The member 1 to be processed may be a film having fine recesses in addition to a silicon substrate or a glass substrate. The film is, for example, an interlayer insulating film, passivation, or a photosensitive film such as a resist. The diameter of the fine recess 2 is, for example, 4 μm.
It is a degree. Further, the liquid 6 is a substance capable of dissolving the gas in the fine recess 2, and for example, when the gas in the fine recess 2 is air, the liquid 6 can be an organic solvent. The organic solvent is suitable because it has a good gas solubility, but is not particularly limited thereto, and for example, other gas-soluble solvents such as an aqueous solution may be used. On the other hand, as the liquid supply means 5, a slit type liquid supply means is used. The slit type liquid supply means has a slit-shaped liquid supply port 5a extending in the thickness direction of the paper surface, and is formed so that the liquid 6 can be continuously supplied from the liquid supply port 5a. The opening width W of the liquid supply port 5a is, for example, about 0.3 mm, and the length (depth) thereof is, for example, about 150 to 500 mm. An ink jet may be used instead of the slit type liquid supply means.
【００２４】そして、図１（１）に示すように、被処理
部材１の上方に液体供給手段５を配置する。なお、液体
供給手段５と被処理部材１表面との間隔は、例えば０．
２ｍｍ程度とする。次に、液体供給口５ａから液体６を
吐出させる。吐出された液体６は、被処理部材１の表面
に放射状に塗れ広がる。なお、被処理部材１の表面が撥
液性を有する場合には、吐出された液体６は、例えば直
径４ｍｍ程度の概略球形状となる。次に、液体供給口５
ａから液体６を連続供給させつつ、液体供給手段５を矢
印８の方向に移動させる。その移動速度は、例えば５ｍ
ｍ／ｓである。すると、被処理部材１の表面に液体６が
塗布される。Then, as shown in FIG. 1A, the liquid supply means 5 is arranged above the member 1 to be processed. The distance between the liquid supply means 5 and the surface of the member 1 to be processed is, for example, 0.
It is about 2 mm. Next, the liquid 6 is discharged from the liquid supply port 5a. The discharged liquid 6 is radially spread and spread on the surface of the member 1 to be processed. When the surface of the member 1 to be processed has liquid repellency, the ejected liquid 6 has a substantially spherical shape with a diameter of, for example, about 4 mm. Next, the liquid supply port 5
The liquid supply means 5 is moved in the direction of the arrow 8 while continuously supplying the liquid 6 from a. The moving speed is, for example, 5 m
m / s. Then, the liquid 6 is applied to the surface of the member 1 to be processed.
【００２５】そして、図１（２）に示すように、液体供
給手段５を微細凹部２と相対する位置まで移動させる。
すると、液体６が微細凹部２の開口部２ａを覆う形にな
る。ここで、例えば微細凹部２内の気体が空気であり液
体６が有機溶媒である場合には、有機溶媒は空気を溶解
する性質を有するので、微細凹部２内の気体が液体６に
溶解する。なお、微細凹部２の容積は非常に小さいの
で、連続供給される液体６の液量は、微細凹部２内の気
体を全て溶解可能な量になっている。従って、微細凹部
２内の気体が全て液体６に溶解することにより、図１
（３）に示すように、微細凹部２内の気体が液体６に置
換され、微細凹部２内に液体６が充填される。Then, as shown in FIG. 1 (2), the liquid supply means 5 is moved to a position facing the fine recesses 2.
Then, the liquid 6 has a shape of covering the opening 2 a of the fine recess 2. Here, for example, when the gas in the fine recesses 2 is air and the liquid 6 is an organic solvent, the gas in the fine recesses 2 is dissolved in the liquid 6 because the organic solvent has a property of dissolving air. Since the volume of the fine recesses 2 is very small, the amount of the liquid 6 that is continuously supplied is such that all the gas in the fine recesses 2 can be dissolved. Therefore, by dissolving all the gas in the fine recesses 2 in the liquid 6,
As shown in (3), the gas in the fine recesses 2 is replaced with the liquid 6, and the liquid 6 is filled in the fine recesses 2.
【００２６】なお、図１では被処理部材１の上方に液体
供給手段５を配置して、下向きに液体６を吐出させた
が、被処理部材１の下方に液体供給手段５を配置して、
上向きに液体６を吐出させてもよい。この場合でも、微
細凹部２内の気体が液体６に溶解するので、微細凹部２
内に液体を充填することができる。In FIG. 1, the liquid supply means 5 is arranged above the member to be processed 1 and the liquid 6 is discharged downward. However, the liquid supply means 5 is arranged below the member to be processed 1,
The liquid 6 may be ejected upward. Even in this case, since the gas in the fine recess 2 is dissolved in the liquid 6, the fine recess 2
The inside can be filled with a liquid.
【００２７】上述した第１実施形態に係る物質充填方法
では、微細凹部２を有する被処理部材１表面に対して、
液体供給手段５により液体６を供給しつつ、液体供給手
段５と被処理部材１表面とを相対移動させ、微細凹部２
内の気体を溶解可能な量の液体６で、微細凹部２の開口
部２ａを覆うことにより、微細凹部２内に液体６を充填
する構成とした。これにより、液体を微粒子化すること
なく微細凹部内に充填できる。なお、液体供給手段によ
り必要量の液体を連続供給することができる。また、複
数の微細凹部や潜在的な微細凹部に対して、効率的に液
体を充填することができる。従って、製造コストを低減
することができる。In the substance filling method according to the first embodiment described above, the surface of the member 1 to be processed having the fine recesses 2 is
While supplying the liquid 6 by the liquid supply means 5, the liquid supply means 5 and the surface of the member to be processed 1 are moved relatively to each other to form the fine recesses 2.
The liquid 6 is filled in the fine recess 2 by covering the opening 2a of the fine recess 2 with an amount of the liquid 6 capable of dissolving the gas therein. As a result, the liquid can be filled in the fine recesses without being made into fine particles. The required amount of liquid can be continuously supplied by the liquid supply means. Further, it is possible to efficiently fill the liquid into the plurality of fine recesses and the potential fine recesses. Therefore, the manufacturing cost can be reduced.
【００２８】なお、液体６として、空気を溶解する性質
を有する有機溶媒を使用すれば、空気雰囲気中で微細凹
部の充填を行うことが可能となり、製造コストを低減す
ることができる。また、液体６として被処理部材１の洗
浄作用を有する有機溶媒等を使用した場合には、被処理
部材１の表面とともに微細凹部２内を洗浄することがで
きる。その場合の例として、例えばオゾン水などが挙げ
られる。If an organic solvent having a property of dissolving air is used as the liquid 6, it becomes possible to fill the fine recesses in an air atmosphere, and the manufacturing cost can be reduced. When an organic solvent or the like having a cleaning action on the member to be processed 1 is used as the liquid 6, the surface of the member to be processed 1 and the inside of the fine recesses 2 can be cleaned. Examples of such cases include ozone water.
【００２９】また、液体６として溶質の有機溶媒溶液等
を使用した場合には、微細凹部２内に液体６が充填され
た後に、被処理部材を加熱して有機溶媒を蒸発させるこ
とにより、微細凹部２内で溶質を固化させることができ
る。なお、溶質として、ＩＴＯ等の導電性材料、層間絶
縁膜、パッシベーション、あるいはレジスト等の感光性
膜などを使用することができる。When a solute organic solvent solution or the like is used as the liquid 6, after the liquid 6 is filled in the fine recesses 2, the member to be treated is heated to evaporate the organic solvent, The solute can be solidified in the recess 2. A conductive material such as ITO, an interlayer insulating film, passivation, or a photosensitive film such as a resist can be used as the solute.
【００３０】なお、上述した第１実施形態に係る物質充
填方法を実施する前に、被処理部材１表面を予め撥液処
理することができる。具体的な撥液処理としては、被処
理部材１表面にフッ素樹脂重合膜等を形成すればよい。
これにより、被処理部材１表面に塗布された液体６を簡
単に除去することができる。なお、被処理部材１表面と
同時に微細凹部２内に撥液処理が施されたとしても、微
細凹部２内の気体が液体６と置換されるので、微細凹部
２内には液体６を充填することができる。その結果、微
細凹部２内のみに液体６を充填することができる。そし
て、充填された液体の有機溶媒を蒸発させ、微細凹部２
内で溶質を固化させることにより、各種基板や各種被膜
の補修を行うことができる。Before the substance filling method according to the first embodiment described above is performed, the surface of the member 1 to be treated can be liquid-repellent treated in advance. As a specific liquid repellent treatment, a fluororesin polymer film or the like may be formed on the surface of the member 1 to be treated.
Thereby, the liquid 6 applied to the surface of the member to be processed 1 can be easily removed. Even if the liquid-repellent treatment is applied to the surface of the member 1 to be processed and the fine recesses 2 at the same time, the gas in the fine recesses 2 is replaced with the liquid 6, so that the liquid 6 is filled in the fine recesses 2. be able to. As a result, the liquid 6 can be filled only in the fine recesses 2. Then, the filled organic solvent is evaporated, and the fine recesses 2
By solidifying the solute inside, various substrates and various coatings can be repaired.
【００３１】次に、第２実施形態について説明する。図
３及び図４に第２実施形態に係る膜形成方法の説明図を
示す。なお図３及び図４の各図は、図２（１）における
Ａ部の拡大図である。第２実施形態に係る膜形成方法
は、ＩＴＯにより配線パターンを形成する方法であっ
て、微細凹部２０を有する絶縁膜１５に対して、ＩＴＯ
被膜材料の有機溶媒溶液２６を液体供給手段により供給
しつつ、液体供給手段を相対移動させて絶縁膜１５の表
面に前記液体２６を塗布するとともに、微細凹部２０内
の気体を溶解可能な量の前記液体２６で、微細凹部２０
の開口部を覆うことにより、微細凹部内の気体を前記液
体２６中に溶解させ、微細凹部２０内に前記液体２６を
充填した後に、前記液体２６を加熱して有機溶媒を蒸発
させることにより、絶縁膜１５の表面にＩＴＯ被膜によ
る配線パターンを形成するとともに、微細凹部２０内で
ＩＴＯ被膜材料を固化させるものである。なお、第１実
施形態と同様の構成となる部分については、その説明を
省略する。Next, a second embodiment will be described. 3 and 4 are explanatory views of the film forming method according to the second embodiment. Note that each of FIGS. 3 and 4 is an enlarged view of a portion A in FIG. The film forming method according to the second embodiment is a method of forming a wiring pattern with ITO, and the ITO is applied to the insulating film 15 having the fine recesses 20.
While supplying the organic solvent solution 26 of the coating material by the liquid supply means, the liquid supply means is relatively moved to apply the liquid 26 to the surface of the insulating film 15, and the amount of gas in the fine recesses 20 can be dissolved. With the liquid 26, the fine recesses 20
By dissolving the gas in the fine recesses in the liquid 26 by filling the liquid 26 in the fine recesses 20 by covering the openings of the above, the liquid 26 is heated to evaporate the organic solvent, A wiring pattern made of an ITO film is formed on the surface of the insulating film 15, and the ITO film material is solidified in the fine recesses 20. Note that description of portions having the same configuration as the first embodiment will be omitted.
【００３２】図２（１）では、シリコン等の基板１０の
表面に、半導体素子としてＭＯＳトランジスタ１２が形
成されている。ＭＯＳトランジスタ１２では、ポリシリ
コン等によりゲート電極１４が形成され、その表面には
シリコン酸化膜等により絶縁膜１５が形成されている。
なお、配線パターンは絶縁膜１５の表面に形成するた
め、ゲート電極１４から配線パターンへの導通を確保す
る必要がある。そこで、ゲート電極１４上の絶縁膜１５
には、微細凹部（コンタクトホール）２０が形成されて
いる。第２実施形態では、図２（２）に示すように、こ
の微細凹部２０に導電性を有するＩＴＯを充填するとと
もに、絶縁膜１５の表面にＩＴＯによる配線パターンを
形成する。In FIG. 2A, a MOS transistor 12 is formed as a semiconductor element on the surface of a substrate 10 made of silicon or the like. In the MOS transistor 12, a gate electrode 14 is formed of polysilicon or the like, and an insulating film 15 is formed of a silicon oxide film or the like on its surface.
Since the wiring pattern is formed on the surface of the insulating film 15, it is necessary to secure electrical continuity from the gate electrode 14 to the wiring pattern. Therefore, the insulating film 15 on the gate electrode 14
A fine recess (contact hole) 20 is formed in the. In the second embodiment, as shown in FIG. 2B, the fine recesses 20 are filled with conductive ITO, and a wiring pattern made of ITO is formed on the surface of the insulating film 15.
【００３３】ＩＴＯは、酸化インジウム（Ｉｎ2Ｏ3）に
酸化錫（ＳｎＯ2）を１〜５重量％ドープしたものであ
る。第２実施形態では、ＩＴＯの超微粒子を有機溶媒に
分散させた液体を使用する。つまり、本発明において
は、液体とは、上記のごとく、例えばＩＴＯの超微粒子
を有機溶媒に分散させたような液状体も含む。なお、ジ
ブチルスズジアセテート（ＤＢＴＤＡ）およびインジウ
ムアセチルアセトナート（ＩｎＡＡ）を有機溶媒に溶解
した液体（錫（Ｓｎ）２〜１０％添加）を使用すること
もできる。有機溶媒には、オクタン（Ｃ8Ｈ18）、エタ
ノール、炭素数５以上の高級アルコール類、またはｎ−
酢酸ブチル等の有機エステル類などが使用可能であり、
濃度０．０２ｍｏｌ／Ｌ程度に希釈して使用する。な
お、液体供給手段の構成は第１実施形態と同様である。ITO is an indium oxide (In 2 O 3 ) doped with 1 to 5% by weight of tin oxide (SnO 2 ). In the second embodiment, a liquid in which ultrafine particles of ITO are dispersed in an organic solvent is used. That is, in the present invention, the liquid also includes a liquid material in which, for example, ultrafine particles of ITO are dispersed in an organic solvent as described above. A liquid obtained by dissolving dibutyltin diacetate (DBTDA) and indium acetylacetonate (InAA) in an organic solvent (tin (Sn) 2 to 10% added) can also be used. The organic solvent, octane (C 8 H 18), ethanol, 5 or more higher alcohols carbon, or n-
Organic esters such as butyl acetate can be used,
It is used by diluting it to a concentration of about 0.02 mol / L. The structure of the liquid supply means is similar to that of the first embodiment.
【００３４】次に、第２実施形態に係る膜形成方法の具
体的な手順を、図３及び図４を使用して説明する。な
お、図３及び図４の各図は、図２（１）におけるＡ部の
拡大図である。Next, a specific procedure of the film forming method according to the second embodiment will be described with reference to FIGS. 3 and 4. Each of FIGS. 3 and 4 is an enlarged view of the portion A in FIG.
【００３５】まず、図３（１）に示す絶縁膜１５の表面
全体に撥液処理を施す。具体的には、図３（２）に示す
ように、絶縁膜１５の表面全体に、有機溶媒に対して撥
液性を有するフッ素樹脂重合膜２２を形成する。なお、
有機溶媒に対して撥液性を有するものであればよく、フ
ッ素樹脂重合膜以外に、例えばシリコーン樹脂重合膜等
を形成してもよい。なお、紫外線等の電磁波に対して揮
発性を有する膜を形成することが好ましい。フッ素樹脂
重合膜の原料液として、Ｃ4Ｆ10やＣ8Ｆ18などの直鎖状
ＰＦＣからなる液体有機物を使用する。この直鎖状ＰＦ
Ｃのガスをプラズマ化すると、直鎖状ＰＦＣが活性とな
り、これが絶縁膜１５の表面に到達して重合することに
より、絶縁膜１５の表面にフッ素樹脂重合膜が形成され
る。First, a liquid repellent treatment is applied to the entire surface of the insulating film 15 shown in FIG. Specifically, as shown in FIG. 3B, a fluororesin polymer film 22 having liquid repellency against an organic solvent is formed on the entire surface of the insulating film 15. In addition,
Any material may be used as long as it has liquid repellency to an organic solvent, and for example, a silicone resin polymer film or the like may be formed in addition to the fluororesin polymer film. Note that it is preferable to form a film that is volatile with respect to electromagnetic waves such as ultraviolet rays. As a raw material liquid for the fluororesin polymer film, a liquid organic substance composed of a linear PFC such as C 4 F 10 or C 8 F 18 is used. This linear PF
When the gas of C is turned into plasma, the linear PFC becomes active, and reaches the surface of the insulating film 15 and polymerizes to form a fluororesin polymer film on the surface of the insulating film 15.
【００３６】次に、図３（３）に示すように、絶縁膜１
５表面の配線パターン形成部分に親液処理を施す。具体
的には、配線パターン形成部分に形成されているフッ素
樹脂重合膜２２に対して、紫外線を照射する。紫外線の
照射によりフッ素樹脂重合膜２２の結合が切断されて除
去される。また、当該部分に付着していた有機物等も分
解・除去される。これにより、微細凹部２０を含む絶縁
膜１５表面の配線パターン形成部分に、有機溶媒に対す
る親液性が付与される。換言すれば、配線パターン形成
部分以外の部分に、撥液処理を施したことになる。Next, as shown in FIG. 3C, the insulating film 1
5. A lyophilic treatment is applied to the wiring pattern formation portion on the surface. Specifically, the fluororesin polymer film 22 formed in the wiring pattern formation portion is irradiated with ultraviolet rays. Irradiation with ultraviolet rays cuts and removes the bond of the fluororesin polymer film 22. Further, organic substances and the like attached to the relevant portion are decomposed and removed. As a result, lyophilicity with respect to the organic solvent is imparted to the wiring pattern formation portion on the surface of the insulating film 15 including the fine recesses 20. In other words, the part other than the part where the wiring pattern is formed is subjected to the liquid repellent treatment.
【００３７】次に、図４（１）に示すように、絶縁膜１
５の表面に、ＩＴＯの超微粒子を有機溶媒に分散させた
液体２６を塗布する。その具体的な方法は第１実施形態
と同様である。まず、液体供給手段の液体供給口から液
体２６を吐出させ、その先端を絶縁膜１５表面の一方端
部に接触させる。次に、液体供給手段を移動させて、絶
縁膜１５表面に液体２６を塗布する（図１（１）参
照）。次に、液体供給手段を微細凹部２０と相対する位
置まで移動させる（図１（２）参照）。そして、微細凹
部２０内に液体２６を充填させる（図１（３）参照）。
その後、液体供給手段を絶縁膜１５表面の他方端部まで
移動させて、絶縁膜１５表面の全体に液体２６を塗布す
る。Next, as shown in FIG. 4A, the insulating film 1
Liquid 26 in which ultrafine particles of ITO are dispersed in an organic solvent is applied to the surface of 5. The specific method is the same as in the first embodiment. First, the liquid 26 is discharged from the liquid supply port of the liquid supply means, and its tip is brought into contact with one end of the surface of the insulating film 15. Next, the liquid supply means is moved to apply the liquid 26 on the surface of the insulating film 15 (see FIG. 1A). Next, the liquid supply means is moved to a position facing the fine recess 20 (see FIG. 1 (2)). Then, the liquid 26 is filled in the fine recesses 20 (see FIG. 1 (3)).
After that, the liquid supply means is moved to the other end of the surface of the insulating film 15, and the liquid 26 is applied to the entire surface of the insulating film 15.
【００３８】ここで、絶縁膜１５表面の配線パターン形
成部分以外の部分には、有機溶媒に対する撥液処理が施
されているので、液体２６がほとんど残留しない。な
お、わずかに残留する液体は、被処理部材を傾斜させる
等により、簡単に除去することができる。結果として、
配線パターン形成部分のみに液体２６が塗布された形に
なる。なお、配線パターン形成部分の端部では、フッ素
樹脂重合膜２２の撥液性により液体２６が盛り上がった
状態で塗布されるので、フッ素樹脂重合膜２２より厚く
液体２６を塗布することができる。Here, since the liquid repellent treatment with respect to the organic solvent is applied to the portion other than the wiring pattern forming portion on the surface of the insulating film 15, the liquid 26 hardly remains. The slightly remaining liquid can be easily removed by inclining the member to be processed. as a result,
The liquid 26 is applied only to the wiring pattern forming portion. Since the liquid 26 is applied to the end portion of the wiring pattern forming portion in a state where the liquid 26 is raised due to the liquid repellency of the fluororesin polymer film 22, the liquid 26 can be applied thicker than the fluororesin polymer film 22.
【００３９】なお、絶縁膜１５の表面に液体２６を塗布
する際に、液体供給手段の液体供給口と絶縁膜１５表面
との距離を調整することにより、塗布される液体２６の
厚さを調整することができる。また、液体供給手段と絶
縁膜１５表面との相対移動の速度を調整することによっ
ても、塗布される液体２６の厚さを調整することができ
る。また、液体供給手段からの液体供給量を調整するこ
とによっても、塗布される液体２６の厚さを調整するこ
とができる。そして、塗布される液体２６の厚さを調整
することにより、その液体２６の乾燥後に所望厚さの被
膜を得ることができる。When the liquid 26 is applied to the surface of the insulating film 15, the thickness of the applied liquid 26 is adjusted by adjusting the distance between the liquid supply port of the liquid supply means and the surface of the insulating film 15. can do. The thickness of the applied liquid 26 can also be adjusted by adjusting the relative movement speed between the liquid supply means and the surface of the insulating film 15. The thickness of the applied liquid 26 can also be adjusted by adjusting the amount of liquid supplied from the liquid supply means. Then, by adjusting the thickness of the applied liquid 26, a coating having a desired thickness can be obtained after the liquid 26 is dried.
【００４０】なお、微細凹部２０内に液体２６を充填さ
せるためには、微細凹部２０内の気体を溶解可能な量の
液体２６を供給する必要がある。そこで、微細凹部２０
に相対する位置において、液体供給手段の液体供給口と
絶縁膜表面との距離を近づけることにより、十分な量の
液体を供給することができる。また、微細凹部２０に相
対する位置において、液体供給手段と絶縁膜表面との相
対移動速度を低下させることによっても、十分な量の液
体を供給することができる。また、微細凹部２０に相対
する位置において、液体供給手段からの液体供給量を増
加させることによっても、十分な量の液体を供給するこ
とができる。なお、少量の液体を複数回にわたって供給
し、複数回に分けて微細凹部内に液体を充填することも
可能である。In order to fill the liquid 26 into the fine recess 20, it is necessary to supply the liquid 26 in an amount capable of dissolving the gas in the fine recess 20. Therefore, the fine recesses 20
A sufficient amount of liquid can be supplied by reducing the distance between the liquid supply port of the liquid supply means and the surface of the insulating film at a position opposite to. In addition, a sufficient amount of liquid can be supplied by reducing the relative movement speed between the liquid supply means and the surface of the insulating film at the position facing the fine recess 20. In addition, a sufficient amount of liquid can be supplied by increasing the liquid supply amount from the liquid supply means at the position facing the fine recess 20. It is also possible to supply a small amount of liquid a plurality of times and fill the liquid into the fine recesses a plurality of times.
【００４１】次に、図４（２）に示すように、液体２６
を乾燥させる。具体的には、加熱により液体２６に含ま
れる有機溶媒を蒸発させる。なお、パターン被膜におけ
るボイドの発生を回避するため、乾燥温度は有機溶媒の
沸点以下の温度とする。例えば、有機溶媒がオクタンの
場合には、沸点が１７０℃程度であるから、窒素雰囲気
中において、１５０℃以下で５分以上加熱する。次に、
アニール処理を行う。ＩＴＯのアニール処理温度は、例
えば５００℃以上である。Next, as shown in FIG. 4B, the liquid 26
To dry. Specifically, the organic solvent contained in the liquid 26 is evaporated by heating. In addition, in order to avoid generation of voids in the pattern coating, the drying temperature is set to a temperature equal to or lower than the boiling point of the organic solvent. For example, when the organic solvent is octane, the boiling point is about 170 ° C., so heating is performed in a nitrogen atmosphere at 150 ° C. or lower for 5 minutes or more. next,
Anneal treatment is performed. The annealing temperature of ITO is, for example, 500 ° C. or higher.
【００４２】次に、図４（３）に示すように、フッ素樹
脂重合膜２２を除去する。具体的には、上述した親液処
理と同様に、紫外線を照射することにより、フッ素樹脂
重合膜を分解して除去する。以上により、ＩＴＯによる
配線パターン２８が形成される。Next, as shown in FIG. 4C, the fluororesin polymer film 22 is removed. Specifically, similarly to the lyophilic treatment described above, the fluororesin polymer film is decomposed and removed by irradiation with ultraviolet rays. As described above, the wiring pattern 28 made of ITO is formed.
【００４３】上述した第２実施形態に係る膜形成方法に
より、絶縁膜の表面にＩＴＯによる配線パターンが形成
されるとともに、微細凹部内にＩＴＯが充填される。こ
の点従来は、真空装置が必要なスパッタにより微細凹部
内にＩＴＯを充填し、また絶縁膜の表面にＩＴＯ被膜を
形成していたので、多くの製造コストを必要とするとい
う問題があった。By the film forming method according to the second embodiment described above, a wiring pattern made of ITO is formed on the surface of the insulating film, and the fine recesses are filled with ITO. In this regard, conventionally, a vacuum apparatus has required a large manufacturing cost because the fine recesses are filled with ITO by sputtering and the ITO film is formed on the surface of the insulating film.
【００４４】しかし、第２実施形態に係る膜形成方法で
は、微細凹部を有する被処理部材表面に対して、ＩＴＯ
被膜材料の有機溶媒溶液を液体供給手段により供給しつ
つ、液体供給手段を相対移動させて被処理部材表面に前
記液体を塗布するとともに、微細凹部内の気体を溶解可
能な量の前記液体で、微細凹部の開口部を覆うことによ
り、微細凹部内に前記液体を充填した後に、前記液体を
加熱して有機溶媒を蒸発させることにより、被処理部材
表面にＩＴＯ被膜を形成するとともに、微細凹部内にＩ
ＴＯ被膜材料を充填する構成とした。However, in the film forming method according to the second embodiment, ITO is applied to the surface of the member to be processed having fine recesses.
While supplying the organic solvent solution of the coating material by the liquid supply means, while relatively moving the liquid supply means to apply the liquid to the surface of the member to be processed, in the amount of the liquid capable of dissolving the gas in the fine recesses, By filling the liquid in the fine recess by covering the opening of the fine recess and then heating the liquid to evaporate the organic solvent, an ITO film is formed on the surface of the member to be processed, and To I
The TO film material was filled.
【００４５】これにより、液体を微粒子化することな
く、成膜と同時に微細凹部に被膜材料を充填することが
できる。なお、液体供給手段により必要量の液体を連続
供給することができる。また、複数の微細凹部や潜在的
な微細凹部に対して、効率的に被膜材料を充填すること
ができる。従って、製造コストを低減することができ
る。Thus, the film material can be filled in the fine recesses simultaneously with the film formation without making the liquid into fine particles. The required amount of liquid can be continuously supplied by the liquid supply means. Further, the coating material can be efficiently filled into the plurality of fine recesses and the potential fine recesses. Therefore, the manufacturing cost can be reduced.
【００４６】また従来は、ＩＴＯ被膜の表面をＣＭＰ等
により研磨加工して膜厚を調整していたので、多くの製
造コストを必要とするという問題があった。しかし、第
２実施形態に係る膜形成方法では、液体供給手段の液体
供給口と被処理部材表面との距離を調整することによ
り、また前記相対移動の速度を調整することにより、ま
た液体供給手段からの液体供給量を調整することによ
り、被処理部材表面に前記液体を所望厚さで塗布する構
成とした。これにより、被膜表面のＣＭＰ等による研磨
加工が不要となり、製造コストを低減することができ
る。Further, conventionally, since the surface of the ITO coating was polished by CMP or the like to adjust the film thickness, there was a problem that a large manufacturing cost was required. However, in the film forming method according to the second embodiment, the distance between the liquid supply port of the liquid supply means and the surface of the member to be processed is adjusted, the speed of the relative movement is adjusted, and the liquid supply means is adjusted. The liquid is applied to the surface of the member to be processed in a desired thickness by adjusting the amount of the liquid supplied from. This eliminates the need for polishing the surface of the coating film by CMP or the like, thereby reducing the manufacturing cost.
【００４７】また従来は、ＩＴＯ被膜をエッチングする
ことによりパターニングを行っていたので、多くの製造
コストを必要とするという問題があった。しかし、第２
実施形態に係る膜形成方法では、被処理部材表面におけ
る被膜形成部分以外の部分を予め撥液処理しておくとと
もに、被処理部材表面における被膜形成部分を予め親液
処理しておく構成とした。これにより、ＩＴＯ被膜形成
後のエッチングが不要となり、製造コストを大幅に低減
することができる。Further, conventionally, since the ITO film was patterned by etching, there was a problem that a large manufacturing cost was required. But the second
In the film forming method according to the embodiment, a portion other than the film forming portion on the surface of the member to be processed is preliminarily subjected to liquid repellent treatment, and the film forming portion on the surface of the member to be treated is previously subjected to lyophilic treatment. This eliminates the need for etching after forming the ITO film, and can significantly reduce the manufacturing cost.
【００４８】なお第２実施形態では、ＩＴＯ被膜材料の
有機溶媒溶液を使用して、ＩＴＯにより配線パターンを
形成する場合について説明したが、これ以外にも、アル
ミ又は銅被膜材料の有機溶媒溶液を使用して、アルミ又
は銅により配線パターンを形成することもできる。ま
た、二酸化シリコン等の絶縁膜材料の有機溶媒溶液を使
用して、層間絶縁膜の形成及び補修を行うことも可能で
ある。一方、第２実施形態では、空気雰囲気で微細凹部
の充填を行ったが、より有機溶媒への溶解性が高い二酸
化炭素雰囲気又は窒素雰囲気において微細凹部の充填を
行えば、より確実に被膜材料の有機溶媒溶液を微細凹部
内に充填することができる。In the second embodiment, the case where the wiring pattern is formed of ITO using the organic solvent solution of the ITO coating material has been described, but in addition to this, the organic solvent solution of the aluminum or copper coating material is used. It can also be used to form a wiring pattern of aluminum or copper. It is also possible to use an organic solvent solution of an insulating film material such as silicon dioxide to form and repair the interlayer insulating film. On the other hand, in the second embodiment, the fine recesses are filled in the air atmosphere, but if the fine recesses are filled in the carbon dioxide atmosphere or the nitrogen atmosphere having higher solubility in the organic solvent, the coating material of the coating material can be more reliably formed. The organic solvent solution can be filled in the fine recesses.
【００４９】なお、本発明に係る微細凹部内への物質充
填方法及び被膜形成方法により、機能的な薄膜を基板上
に形成した構造体は、例えば半導体デバイス、電気回
路、表示体モジュール、発光素子などのデバイスに適用
される。その一例を図７及び図８に示す。図７は例え
ば、半導体デバイス、電気回路、表示体モジュールの概
略図であり、図８は、例えば発光素子を形成した微細構
造体の概略図である。図７において、主に半導体デバイ
スおよび電気回路の機能的薄膜２１４は例えば配線パタ
ーンの金属薄膜であり、また表示体モジュールの機能的
薄膜２１４は例えばカラーフィルタの有機分子膜であ
る。図７ではカラーフィルタの一例を示しているが、本
発明の被膜形成方法を用いて他の機能的薄膜を形成する
ことに差異はない。図８において、発光素子の機能的薄
膜２１４は例えば発光層に使用する有機ＥＬ（electrol
uminescence）の薄膜であり、透明基板２１１上に形成
された図中記載の透明電極２１５と対をなす電極（不図
示）を形成して、上記機能的薄膜２１４を挟み込む形で
素子を形成する。また、上記電極についても、本発明の
被膜形成方法を用いて形成できる点は言うまでもない。
なお上記機能的薄膜２１４の膜厚は、微細構造体を如何
なる用途のものにするかにより任意であるが、０．０２
〜４μｍとするのが好ましい。これらに本発明の成膜方
法を適用したものは高品質であり、その製造工程の簡略
化、製造コスト面においても従来法に勝るものである。The structure in which the functional thin film is formed on the substrate by the method for filling the fine recesses with the substance and the method for forming a film according to the present invention is, for example, a semiconductor device, an electric circuit, a display module, a light emitting element. Applies to devices such as. An example thereof is shown in FIGS. 7 and 8. FIG. 7 is a schematic diagram of, for example, a semiconductor device, an electric circuit, and a display module, and FIG. 8 is a schematic diagram of, for example, a fine structure in which a light emitting element is formed. In FIG. 7, mainly the functional thin film 214 of the semiconductor device and the electric circuit is, for example, a metal thin film of a wiring pattern, and the functional thin film 214 of the display module is, for example, an organic molecular film of a color filter. Although FIG. 7 shows an example of a color filter, there is no difference in forming another functional thin film using the film forming method of the present invention. In FIG. 8, the functional thin film 214 of the light emitting device is, for example, an organic EL (electrol) used for a light emitting layer.
An electrode (not shown) which is a thin film of (uminescence) and which forms a pair with the transparent electrode 215 described in the drawing formed on the transparent substrate 211 is formed, and the element is formed by sandwiching the functional thin film 214. Needless to say, the above electrodes can also be formed by using the film forming method of the present invention.
The thickness of the functional thin film 214 is arbitrary depending on the intended use of the fine structure, but is 0.02.
It is preferable that the thickness is 4 μm. The films to which the film forming method of the present invention is applied have high quality, and are superior to the conventional methods in terms of simplification of the manufacturing process and manufacturing cost.
【００５０】[0050]
【発明の効果】本発明に係る物質充填方法は、凹部を有
する被処理部材表面に対して液体供給手段により液体を
供給する工程と、前記液体により前記凹部の開口部を覆
い、前記凹部内の気体を前記液体中に溶解させ、前記凹
部内に前記液体を充填する工程と、を有する構成とした
ので、製造コストを低減することができる。The substance filling method according to the present invention comprises a step of supplying a liquid to the surface of a member to be processed having a recess by a liquid supply means, and the opening of the recess being covered with the liquid, Since the gas is dissolved in the liquid and the liquid is filled in the recess, the manufacturing cost can be reduced.
【００５１】また、本発明に係る膜形成方法は、被処理
部材表面の凹部内に膜を形成させる膜形成方法におい
て、前記被処理部材の表面に対して、液体供給手段によ
り膜材料と溶媒とを含む液体を供給し、前記凹部内の気
体を溶解可能な前記液体で、前記凹部の開口部を覆い、
前記凹部内の気体を前記液体中に溶解させて、前記凹部
内に前記液体を充填し、前記液体を加熱して前記溶媒を
蒸発させることにより、前記被処理部材表面に前記膜材
料からなる膜を形成する構成としたので、製造コストを
低減することができる。Further, the film forming method according to the present invention is a film forming method for forming a film in a concave portion of a surface of a member to be processed, wherein a film material and a solvent are supplied to the surface of the member to be processed by a liquid supply means. Is supplied, and the liquid capable of dissolving the gas in the recess is used to cover the opening of the recess,
A film made of the film material is formed on the surface of the member to be processed by dissolving the gas in the recess in the liquid, filling the liquid in the recess, and heating the liquid to evaporate the solvent. Since the structure is formed, the manufacturing cost can be reduced.
【図１】 第１実施形態に係る物質充填方法の説明図で
ある。FIG. 1 is an explanatory diagram of a substance filling method according to a first embodiment.
【図２】 配線パターンの説明図であり、（１）は配線
パターン形成前の状態であり、（２）は配線パターン形
成後の状態である。FIG. 2 is an explanatory diagram of a wiring pattern, where (1) is a state before the wiring pattern is formed and (2) is a state after the wiring pattern is formed.
【図３】 第２実施形態に係る膜形成方法の第１説明図
である。FIG. 3 is a first explanatory diagram of a film forming method according to a second embodiment.
【図４】 第２実施形態に係る膜形成方法の第２説明図
である。FIG. 4 is a second explanatory view of the film forming method according to the second embodiment.
【図５】 従来技術に係る膜形成方法の第１説明図であ
る。FIG. 5 is a first explanatory diagram of a film forming method according to a conventional technique.
【図６】 従来技術に係る膜形成方法の第２説明図であ
る。FIG. 6 is a second explanatory diagram of a film forming method according to a conventional technique.
【図７】 微細構造体の第１説明図である。FIG. 7 is a first explanatory diagram of a fine structure.
【図８】 微細構造体の第２説明図である。FIG. 8 is a second explanatory diagram of a fine structure.
１………被処理部材、２………微細凹部、２ａ………開
口部、５………液体供給手段、５ａ………液体供給口、
６………液体、８………矢印、１０………基板、１２…
……ＭＯＳトランジスタ、１４………ゲート電極、１５
………絶縁膜、２０………微細凹部、２２………フッ素
樹脂重合膜、２６………液体、２７………ＩＴＯ被膜、
２８………配線パターン、３０………レジスト。２１１
………基板、２１４………機能的薄膜、２１５………透
明電極、２２０………微細構造体。Reference numeral 1 ... Member to be processed, 2 ... Micro concave portion, 2a ... Opening portion, 5 ... Liquid supply means, 5a ... Liquid supply port,
6 ... Liquid, 8 ... Arrow, 10 ... Substrate, 12 ...
...... MOS transistor, 14 ............ Gate electrode, 15
……… Insulating film, 20 ……… Fine recesses, 22 ……… Fluororesin polymer film, 26 ……… Liquid, 27 ……… ITO film,
28: Wiring pattern, 30: Resist. 211
... substrate, 214 ... functional thin film, 215 ... transparent electrode, 220 ... microstructure.
Claims (15)
凹部内の気体を前記液体中に溶解させ、前記凹部内に前
記液体を充填する工程と、を有することを特徴とする物
質充填方法。1. A substance filling method, comprising: a step of covering an opening of a concave portion with a liquid; and a step of dissolving gas in the concave portion in the liquid and filling the liquid into the concave portion. Method.
体供給手段により液体を供給する工程と、 前記液体により前記凹部の開口部を覆い、前記凹部内の
気体を前記液体中に溶解させ、前記凹部内に前記液体を
充填する工程と、を有することを特徴とする物質充填方
法。2. A step of supplying a liquid to a surface of a member to be processed having a recess by a liquid supply means, the opening of the recess being covered with the liquid, and the gas in the recess being dissolved in the liquid, Filling the inside of the recess with the liquid.
とする、請求項１または２に記載の物質充填方法。3. The substance filling method according to claim 1, wherein the liquid is an organic solvent.
を有するものであることを特徴とする、請求項３に記載
の物質充填方法。4. The substance filling method according to claim 3, wherein the organic solvent has a cleaning effect on the inside of the recess.
して前記溶媒を蒸発させることにより、前記凹部内に前
記溶質を充填させることを特徴とする、請求項１または
２に記載の物質充填方法。5. The liquid contains a solute and a solvent, and after filling the liquid in the recess, the liquid is heated to evaporate the solvent, thereby filling the solute in the recess. The material filling method according to claim 1 or 2, characterized in that.
ることを特徴とする、請求項２ないし５のいずれかに記
載の物質充填方法。6. The substance according to claim 2, wherein the surface of the member to be treated having the recess is subjected to a liquid repellent treatment before the recess is filled with the liquid. Filling method.
質充填方法を使用して製造したことを特徴とするデバイ
ス。7. A device manufactured by using the substance filling method according to claim 1. Description:
る膜形成方法において、 前記被処理部材の表面に対して、液体供給手段により膜
材料と溶媒とを含む液体を供給し、 前記凹部内の気体を溶解可能な前記液体で、前記凹部の
開口部を覆い、 前記凹部内の気体を前記液体中に溶解させて、前記凹部
内に前記液体を充填し、 前記液体を加熱して前記溶媒を蒸発させることにより、
前記被処理部材表面に前記膜材料からなる膜を形成する
ことを特徴とする膜形成方法。8. A film forming method for forming a film in a recess on a surface of a member to be processed, wherein a liquid containing a film material and a solvent is supplied to the surface of the member to be processed by a liquid supply means, and the recess is formed. With the liquid capable of dissolving the gas inside, the opening of the recess is covered, the gas inside the recess is dissolved in the liquid, the liquid is filled into the recess, and the liquid is heated to By evaporating the solvent,
A film forming method comprising forming a film made of the film material on the surface of the member to be processed.
処理部材表面との間の距離を調整することにより、前記
被処理部材表面に前記液体を所望厚さで塗布することを
特徴とする、請求項８に記載の膜形成方法。9. The liquid is applied to the surface of the member to be processed in a desired thickness by adjusting the distance between the liquid supply port of the liquid supply means and the surface of the member to be processed. The film forming method according to claim 8.
面とを相対移動させ、前記相対移動の速度を調整するこ
とにより、前記被処理部材表面に前記液体を所望厚さで
塗布することを特徴とする、請求項８に記載の膜形成方
法。10. The liquid is applied to the surface of the member to be processed in a desired thickness by relatively moving the liquid supply means and the surface of the member to be processed and adjusting the speed of the relative movement. The film forming method according to claim 8.
調整することにより、前記被処理部材表面に前記液体を
所望厚さで塗布することを特徴とする請求項８に記載の
膜形成方法。11. The film forming method according to claim 8, wherein the liquid is applied to the surface of the member to be processed in a desired thickness by adjusting the amount of liquid supplied from the liquid supply means.
する前に、 前記被処理部材表面における膜形成部分以外の部分を予
め撥液処理することを特徴とする、請求項８ないし１１
のいずれかに記載の膜形成方法。12. The liquid repellent treatment is applied to a portion of the surface of the member to be treated other than the film forming portion before the liquid is applied to the surface of the member to be treated.
The method for forming a film according to any one of 1.
する前に、 前記被処理部材表面における膜形成部分を予め親液処理
することを特徴とする、請求項８ないし１１のいずれか
に記載の膜形成方法。13. The film-forming portion on the surface of the member to be processed is previously subjected to lyophilic treatment before applying the liquid to the surface of the member to be processed, according to any one of claims 8 to 11. Film forming method.
の膜形成方法を使用して製造したことを特徴とするデバ
イス。14. A device manufactured by using the film forming method according to any one of claims 8 to 13.
し膜を形成するデバイスの製造方法において、 前記被処理部材の表面に対して、液体供給手段により膜
材料と溶媒とを含む液体を供給し、 前記液体で、前記凹部の開口部を覆い、前記凹部内の気
体を前記液体中に溶解させて前記凹部内に前記液体を充
填し、 前記液体を加熱して前記溶媒を蒸発させることにより、
前記被処理部材表面に前記膜材料からなる膜を形成する
ことを特徴とするデバイスの製造方法。15. A method of manufacturing a device for forming a film by filling a liquid material into a recess of a member to be processed, wherein a liquid containing a film material and a solvent is supplied to a surface of the member to be processed by a liquid supply means. Supplying the liquid, covering the opening of the recess with the liquid, dissolving the gas in the recess into the liquid to fill the liquid in the recess, and heating the liquid to evaporate the solvent. Due to
A method of manufacturing a device, comprising forming a film made of the film material on the surface of the member to be processed.
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|---|---|---|---|
| JP2002061740A JP3951750B2 (en) | 2002-03-07 | 2002-03-07 | Substance filling method, film forming method, device and device manufacturing method |
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|---|---|---|---|
| JP2002061740A JP3951750B2 (en) | 2002-03-07 | 2002-03-07 | Substance filling method, film forming method, device and device manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| JP2003257890A true JP2003257890A (en) | 2003-09-12 |
| JP3951750B2 JP3951750B2 (en) | 2007-08-01 |
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ID=28670432
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002061740A Expired - Fee Related JP3951750B2 (en) | 2002-03-07 | 2002-03-07 | Substance filling method, film forming method, device and device manufacturing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005159324A (en) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | Wiring board, semiconductor device, and their manufacturing methods |
| US8263983B2 (en) | 2003-10-28 | 2012-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Wiring substrate and semiconductor device |
| KR20140065991A (en) * | 2012-11-22 | 2014-05-30 | 삼성전자주식회사 | Method of forming electric wiring using inkjet printing and inkjet printing apparatus |
Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02271524A (en) * | 1989-04-12 | 1990-11-06 | Nec Corp | Flattening of fine buried contact hole |
| JPH0430431A (en) * | 1990-05-25 | 1992-02-03 | Sony Corp | Wiring formation |
| JPH04326719A (en) * | 1991-04-18 | 1992-11-16 | Geo Centers Inc | Method of forming high-resolution pattern to solid substrate |
| JPH05160018A (en) * | 1991-12-04 | 1993-06-25 | Fujitsu Ltd | Spin coating method |
| JPH05299373A (en) * | 1992-04-21 | 1993-11-12 | Sony Corp | Formation of buried plug |
| JPH07326235A (en) * | 1994-05-31 | 1995-12-12 | Sony Corp | Method for forming metallic pattern and manufacture of semiconductor having metallic wiring pattern |
| JPH09134891A (en) * | 1995-09-06 | 1997-05-20 | Vacuum Metallurgical Co Ltd | Formation of thin film of semiconductor substrate |
| JPH09203803A (en) * | 1996-01-25 | 1997-08-05 | Asahi Glass Co Ltd | Production of color filter and liquid crystal display element formed by using the color filter |
| JPH09230129A (en) * | 1996-02-26 | 1997-09-05 | Asahi Glass Co Ltd | Production of color filter and liquid crystal display element formed by using the same |
| WO1998012689A1 (en) * | 1996-09-19 | 1998-03-26 | Seiko Epson Corporation | Matrix type display device and method of production thereof |
| JPH1167695A (en) * | 1997-08-13 | 1999-03-09 | Ebara Corp | Liquid-filling method/device into fine hollow and plating method into fine hollow |
| JPH1197392A (en) * | 1997-09-16 | 1999-04-09 | Ebara Corp | Method and system for filling fine recess |
| JPH11344804A (en) * | 1997-08-08 | 1999-12-14 | Dainippon Printing Co Ltd | Pattern forming body and pattern forming method therefor |
| JP2000138188A (en) * | 1998-10-29 | 2000-05-16 | Applied Materials Inc | Film forming method and device of semiconductor device |
| JP2000228374A (en) * | 1998-12-02 | 2000-08-15 | Ulvac Japan Ltd | Method for forming metallic thin film, and manufacture of metallic fine particle scattering solution |
| JP2000353594A (en) * | 1998-03-17 | 2000-12-19 | Seiko Epson Corp | Board for patterning thin film |
| WO2001027983A1 (en) * | 1999-10-15 | 2001-04-19 | Ebara Corporation | Method and apparatus for forming interconnection |
| JP2001254185A (en) * | 2000-03-13 | 2001-09-18 | Vacuum Metallurgical Co Ltd | Method of depositing electrically conductive metallic thin film and electrically conductive metallic hyperfine particle-dispersed material used for the method |
| WO2001070435A1 (en) * | 2000-03-22 | 2001-09-27 | Ebara Corporation | Ultra fine composite metal particles |
| JP2001284289A (en) * | 2000-03-31 | 2001-10-12 | Seiko Epson Corp | Manufacturing method of fine structure |
| WO2001084610A1 (en) * | 2000-05-02 | 2001-11-08 | Catalysts & Chemicals Industries Co., Ltd. | Method of manufacturing integrated circuit, and substrate with integrated circuit formed by the method of manufacturing integrated circuit |
| JP2002141351A (en) * | 2000-10-31 | 2002-05-17 | Japan Science & Technology Corp | Circuit board and method of forming metal wiring |
| WO2002052627A1 (en) * | 2000-12-22 | 2002-07-04 | Seiko Epson Corporation | Pattern forming method and device and semiconductor device, electric circuit, display element module and luminous element |
-
2002
- 2002-03-07 JP JP2002061740A patent/JP3951750B2/en not_active Expired - Fee Related
Patent Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02271524A (en) * | 1989-04-12 | 1990-11-06 | Nec Corp | Flattening of fine buried contact hole |
| JPH0430431A (en) * | 1990-05-25 | 1992-02-03 | Sony Corp | Wiring formation |
| JPH04326719A (en) * | 1991-04-18 | 1992-11-16 | Geo Centers Inc | Method of forming high-resolution pattern to solid substrate |
| JPH05160018A (en) * | 1991-12-04 | 1993-06-25 | Fujitsu Ltd | Spin coating method |
| JPH05299373A (en) * | 1992-04-21 | 1993-11-12 | Sony Corp | Formation of buried plug |
| JPH07326235A (en) * | 1994-05-31 | 1995-12-12 | Sony Corp | Method for forming metallic pattern and manufacture of semiconductor having metallic wiring pattern |
| JPH09134891A (en) * | 1995-09-06 | 1997-05-20 | Vacuum Metallurgical Co Ltd | Formation of thin film of semiconductor substrate |
| JPH09203803A (en) * | 1996-01-25 | 1997-08-05 | Asahi Glass Co Ltd | Production of color filter and liquid crystal display element formed by using the color filter |
| JPH09230129A (en) * | 1996-02-26 | 1997-09-05 | Asahi Glass Co Ltd | Production of color filter and liquid crystal display element formed by using the same |
| WO1998012689A1 (en) * | 1996-09-19 | 1998-03-26 | Seiko Epson Corporation | Matrix type display device and method of production thereof |
| JPH11344804A (en) * | 1997-08-08 | 1999-12-14 | Dainippon Printing Co Ltd | Pattern forming body and pattern forming method therefor |
| JPH1167695A (en) * | 1997-08-13 | 1999-03-09 | Ebara Corp | Liquid-filling method/device into fine hollow and plating method into fine hollow |
| JPH1197392A (en) * | 1997-09-16 | 1999-04-09 | Ebara Corp | Method and system for filling fine recess |
| JP2000353594A (en) * | 1998-03-17 | 2000-12-19 | Seiko Epson Corp | Board for patterning thin film |
| JP2000138188A (en) * | 1998-10-29 | 2000-05-16 | Applied Materials Inc | Film forming method and device of semiconductor device |
| JP2000228374A (en) * | 1998-12-02 | 2000-08-15 | Ulvac Japan Ltd | Method for forming metallic thin film, and manufacture of metallic fine particle scattering solution |
| WO2001027983A1 (en) * | 1999-10-15 | 2001-04-19 | Ebara Corporation | Method and apparatus for forming interconnection |
| JP2001254185A (en) * | 2000-03-13 | 2001-09-18 | Vacuum Metallurgical Co Ltd | Method of depositing electrically conductive metallic thin film and electrically conductive metallic hyperfine particle-dispersed material used for the method |
| WO2001070435A1 (en) * | 2000-03-22 | 2001-09-27 | Ebara Corporation | Ultra fine composite metal particles |
| JP2001284289A (en) * | 2000-03-31 | 2001-10-12 | Seiko Epson Corp | Manufacturing method of fine structure |
| WO2001084610A1 (en) * | 2000-05-02 | 2001-11-08 | Catalysts & Chemicals Industries Co., Ltd. | Method of manufacturing integrated circuit, and substrate with integrated circuit formed by the method of manufacturing integrated circuit |
| JP2002141351A (en) * | 2000-10-31 | 2002-05-17 | Japan Science & Technology Corp | Circuit board and method of forming metal wiring |
| WO2002052627A1 (en) * | 2000-12-22 | 2002-07-04 | Seiko Epson Corporation | Pattern forming method and device and semiconductor device, electric circuit, display element module and luminous element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005159324A (en) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | Wiring board, semiconductor device, and their manufacturing methods |
| US8263983B2 (en) | 2003-10-28 | 2012-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Wiring substrate and semiconductor device |
| US9237657B2 (en) | 2003-10-28 | 2016-01-12 | Semiconductor Energy Laboratory Co. Ltd. | Wiring substrate, semiconductor device, and method for manufacturing thereof |
| KR20140065991A (en) * | 2012-11-22 | 2014-05-30 | 삼성전자주식회사 | Method of forming electric wiring using inkjet printing and inkjet printing apparatus |
| KR101968635B1 (en) * | 2012-11-22 | 2019-04-12 | 삼성전자주식회사 | Method of forming electric wiring using inkjet printing and inkjet printing apparatus |
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|---|---|
| JP3951750B2 (en) | 2007-08-01 |
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