JP2003059650A - Drive circuit of organic electroluminescence element - Google Patents
Drive circuit of organic electroluminescence elementInfo
- Publication number
- JP2003059650A JP2003059650A JP2001245214A JP2001245214A JP2003059650A JP 2003059650 A JP2003059650 A JP 2003059650A JP 2001245214 A JP2001245214 A JP 2001245214A JP 2001245214 A JP2001245214 A JP 2001245214A JP 2003059650 A JP2003059650 A JP 2003059650A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- resistor
- series
- drive circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005401 electroluminescence Methods 0.000 title abstract description 6
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000032683 aging Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明が属する技術分野】本発明は、有機エレクトロル
ミネッセンス素子の駆動回路に関する。TECHNICAL FIELD The present invention relates to a drive circuit for an organic electroluminescence device.
【０００２】[0002]
【従来の技術】容量性発光素子の１つである有機エレク
トロルミネッセンス素子（以下、単にＥＬ素子という）
は、電気的には、図１のような等価回路にて表すことが
できる。図１から分かるように、素子は、容量成分Ｃ
と、該容量成分に並列に結合するダイオード特性の成分
Ｅとによる構成に置き換えることができる。よって、Ｅ
Ｌ素子は、容量性の発光素子であると考えられる。ＥＬ
素子は、直流の発光駆動電圧が電極間に印加されると、
電荷が容量成分Ｃに蓄積され、続いて当該素子固有の障
壁電圧または発光閾値電圧を越えると、電極（ダイオー
ド成分Ｅの陽極側）から発光層を担う有機機能層に電流
が流れ始め、この電流に比例した強度で発光する。2. Description of the Related Art An organic electroluminescence device (hereinafter simply referred to as an EL device) which is one of capacitive light emitting devices.
Can be electrically represented by an equivalent circuit as shown in FIG. As can be seen from FIG. 1, the element has a capacitance component C
And a component E having a diode characteristic that is coupled in parallel with the capacitance component. Therefore, E
The L element is considered to be a capacitive light emitting element. EL
When a direct current light emission drive voltage is applied between the electrodes,
When the electric charge is accumulated in the capacitance component C and then exceeds the barrier voltage or the light emission threshold voltage peculiar to the device, a current starts to flow from the electrode (the anode side of the diode component E) to the organic functional layer serving as the light emission layer. It emits light with an intensity proportional to.
【０００３】かかる素子の電圧Ｖ−電流Ｉ−輝度Ｌの特
性は、図２に示すように、ダイオードの特性に類似して
おり、発光閾値電圧Ｖth以下の電圧では電流Ｉは極めて
小さく、発光閾値電圧Ｖth以上の電圧になると電流Ｉは
急激に増加する。また、電流Ｉと輝度Ｌはほぼ比例す
る。このような素子は、発光閾値電圧Ｖthを超える駆動
電圧を素子に印加すれば当該駆動電圧に応じた電流に比
例した発光輝度を呈し、印加される駆動電圧が発光閾値
電圧Ｖth以下であれば駆動電流が流れず発光輝度もゼロ
に等しいままである。The characteristic of voltage V-current I-luminance L of such an element is similar to the characteristic of a diode as shown in FIG. 2, and the current I is extremely small at a voltage equal to or lower than the light emission threshold voltage Vth. When the voltage becomes equal to or higher than the voltage Vth, the current I rapidly increases. Further, the current I and the luminance L are almost proportional. Such an element exhibits light emission luminance proportional to a current corresponding to the drive voltage when a drive voltage exceeding the light emission threshold voltage Vth is applied to the element, and is driven if the applied drive voltage is equal to or less than the light emission threshold voltage Vth. No current flows and the emission brightness remains equal to zero.
【０００４】[0004]
【発明が解決しようとする課題】かかるＥＬ素子を発光
駆動する駆動回路においては、安定した輝度の発光を常
に得るためにＥＬ素子を定電圧或いは定電流で駆動する
ことが必要である。しかしながら、ＥＬ素子自体の経時
変化によりＥＬ素子のインピーダンスが変化すると、輝
度が低下してしまうという問題点があった。特に、ＥＬ
素子の初期段階におけるインピーダンスの変化が大き
く、初期値に対して短時間で輝度が著しく低下してしま
うという問題点があった。また、輝度を一定に保つため
には、ＥＬ素子の輝度の低下や電流値の減少を検出し、
それに従って電源電圧を変化させる必要があるが、回路
構成が複雑になるという欠点がある。In the drive circuit for driving the EL element to emit light, it is necessary to drive the EL element with a constant voltage or a constant current in order to always obtain light emission with stable brightness. However, when the impedance of the EL element changes with the lapse of time of the EL element itself, there is a problem that the brightness decreases. Especially EL
There is a problem in that the change in impedance at the initial stage of the device is large and the brightness is significantly reduced in a short time with respect to the initial value. Further, in order to keep the brightness constant, a decrease in the brightness of the EL element or a decrease in the current value is detected,
Although it is necessary to change the power supply voltage accordingly, there is a drawback that the circuit configuration becomes complicated.
【０００５】そこで、本発明の目的は、経時変化による
発光輝度の急速な低下を抑制することができるＥＬ素子
の駆動回路を提供することである。Therefore, an object of the present invention is to provide a drive circuit for an EL element capable of suppressing a rapid decrease in emission luminance due to a change with time.
【０００６】[0006]
【課題を解決するための手段】本発明のＥＬ素子の駆動
回路は、ＥＬ素子に直列に接続された抵抗と、ＥＬ素子
と抵抗との直列回路に電圧を供給する電圧供給手段と、
を備えたことを特徴としている。An EL element drive circuit according to the present invention comprises a resistor connected in series to the EL element, and voltage supply means for supplying a voltage to a series circuit of the EL element and the resistor.
It is characterized by having.
【０００７】[0007]
【発明の実施の形態】以下、本発明の実施例を図面を参
照しつつ詳細に説明する。図３は本発明による有機ＥＬ
素子の駆動回路を基本的構成を示している。この駆動回
路においては、ＥＬ素子１１と抵抗１２とが直列に接続
されている。すなわち、ＥＬ素子１１の陽極が抵抗１２
の一端と接続され、陰極はアース接続されている。抵抗
１２は例えば、１ｋΩ或いは１０ｋΩである。ＥＬ素子
１１と抵抗１２との直列回路には定電圧源１３の出力電
圧がスイッチ１４を介して印加される。スイッチ１４は
ＥＬ素子１１を発光させるべきときに図示しない制御回
路によってオンにされる。スイッチ１４のオン時におけ
る定電圧源１３の出力電圧の印加によって定電圧源１３
の正端子から電流は駆動電流となって抵抗１２を介して
ＥＬ素子１１を流れ、アースに流れ込む。このように駆
動電流が流れることによってＥＬ素子１１は発光する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 3 shows an organic EL according to the present invention.
The basic configuration of the element drive circuit is shown. In this drive circuit, the EL element 11 and the resistor 12 are connected in series. That is, the anode of the EL element 11 is the resistor 12
, And the cathode is grounded. The resistance 12 is, for example, 1 kΩ or 10 kΩ. The output voltage of the constant voltage source 13 is applied to the series circuit of the EL element 11 and the resistor 12 via the switch 14. The switch 14 is turned on by a control circuit (not shown) when the EL element 11 should emit light. By applying the output voltage of the constant voltage source 13 when the switch 14 is turned on, the constant voltage source 13
The current from the positive terminal of the above becomes a drive current, flows through the EL element 11 via the resistor 12, and flows into the ground. The EL element 11 emits light when the drive current flows in this manner.
【０００８】図４〜図７は抵抗１２を設けた場合と設け
ない場合とのＥＬ素子１１の抵抗値、印加電圧、電流及
び発光輝度各々の時間変化を示している。図４〜図７各
々において実線の特性が抵抗１２を設けた場合であり、
一点鎖線の特性が抵抗１２を設けない場合である。ここ
で、図５の電圧特性から分かるように、時間ｔ＝０の段
階ではＥＬ素子１１には抵抗１２を設けた場合と設けな
い場合とでほぼ同一の電圧が印加されるとする。FIGS. 4 to 7 show changes with time of the resistance value, applied voltage, current and light emission luminance of the EL element 11 with and without the resistance 12, respectively. In each of FIGS. 4 to 7, the solid line is the case where the resistor 12 is provided,
The characteristic of the alternate long and short dash line is the case where the resistor 12 is not provided. Here, as can be seen from the voltage characteristics of FIG. 5, it is assumed that substantially the same voltage is applied to the EL element 11 with and without the resistor 12 at the stage of time t = 0.
【０００９】ＥＬ素子１１の抵抗値は図４に示すよう
に、抵抗１２を設けた場合及び設けない場合のいずれに
おいて時間経過に従って増加するが、抵抗１２を設けた
場合には設けない場合に比べてその増加が相対的に小さ
い。ＥＬ素子１１に印加される電圧は図５に示すよう
に、抵抗１２を設けない場合には当然であるが、一定で
ある。一方、抵抗１２を設けた場合にはＥＬ素子１１の
抵抗値の増加が影響してＥＬ素子１１と抵抗１２とによ
る分圧比が変化するので、ＥＬ素子１１の印加電圧は図
５に示すように徐々に増加し、やがて微増の状態とな
る。As shown in FIG. 4, the resistance value of the EL element 11 increases with the passage of time when the resistor 12 is provided or not provided, but when the resistor 12 is provided, compared with the case where it is not provided. The increase is relatively small. As shown in FIG. 5, the voltage applied to the EL element 11 is constant as a matter of course when the resistor 12 is not provided. On the other hand, when the resistor 12 is provided, the increase in the resistance value of the EL element 11 affects the voltage division ratio between the EL element 11 and the resistor 12, so that the voltage applied to the EL element 11 is as shown in FIG. It will gradually increase and then it will increase slightly.
【００１０】ＥＬ素子１１を流れる電流は図６に示すよ
うに、抵抗１２を設けた場合及び設けない場合のいずれ
の場合においても時間経過に従って低下するが、抵抗１
２を設けた場合には設けない場合に比べてＥＬ素子１１
の抵抗値の増加率が小さいためにその電流の低下も相対
的に小さい。ＥＬ素子１１の発光輝度は図７に示すよう
に、抵抗１２を設けた場合及び設けない場合のいずれの
場合においても時間経過に従って低下するが、抵抗１２
を設けた場合には設けない場合に比べて発光輝度の低下
が相対的に小さい。すなわち、抵抗１２をＥＬ素子１１
と直列に挿入したことにより、時間経過に伴うＥＬ素子
１１のインピーダンスの変化が抑制され、この結果、駆
動電流の変化も小さくなり、発光輝度の低下を防止する
ことができる。これは、ＥＬ素子１１に印加される電圧
は時間経過と共に微少変動し続けるのでＥＬ素子１１自
体の劣化が抑制されると考えられる。As shown in FIG. 6, the current flowing through the EL element 11 decreases with the passage of time both in the case where the resistor 12 is provided and in the case where the resistor 12 is not provided.
The EL element 11 is provided when 2 is provided as compared with when not provided.
Since the increase rate of the resistance value is small, the decrease in the current is relatively small. As shown in FIG. 7, the light emission brightness of the EL element 11 decreases with the passage of time both in the case where the resistor 12 is provided and in the case where the resistor 12 is not provided.
In the case where the element is provided, the decrease in the emission luminance is relatively small as compared with the case where the element is not provided. That is, the resistor 12 is connected to the EL element 11
The change in the impedance of the EL element 11 with the lapse of time is suppressed by inserting it in series, and as a result, the change in the drive current is also reduced, and a decrease in light emission luminance can be prevented. This is considered to be because the voltage applied to the EL element 11 continues to fluctuate slightly with the passage of time, and therefore deterioration of the EL element 11 itself is suppressed.
【００１１】図８は本発明を適用したアクティブマトリ
ックス型表示パネルの駆動回路を部分的に示している。
表示パネルはｍ×ｎ画素からなり、駆動回路は画素毎に
ＥＬ素子の発光回路を備えている。ｍ及びｎは２以上の
整数である。図８には６個の発光回路１９i,j〜１９
i+1,j+2の部分だけを示しているが、その内部構成は同
一であるので、ＥＬ素子２０を発光駆動する発光回路１
９i,jについて説明する。ここで、ｉ及びｊはｍ及びｎ
より小の整数である。FIG. 8 partially shows a drive circuit of an active matrix type display panel to which the present invention is applied.
The display panel is composed of m × n pixels, and the drive circuit includes an EL element light emitting circuit for each pixel. m and n are integers of 2 or more. FIG. 8 shows six light emitting circuits 19 i, j to 19
Only the i + 1 and j + 2 parts are shown, but since the internal configuration is the same, the light emitting circuit 1 for driving the EL element 20 to emit light is shown.
9 i, j will be described. Where i and j are m and n
It is a smaller integer.
【００１２】この発光回路１９i,jは、２つのＦＥＴ（F
ield Effect Transistor)２１，２２、コンデンサ２３
及び抵抗２４を有している。ＦＥＴ２１のゲートＧは、
アドレス信号が供給されるアドレス走査ラインＡｉに接
続され、ＦＥＴ２１のソースＳはデータ信号が供給され
るデータラインＢｊに接続されている。ＦＥＴ２１のド
レインＤはＦＥＴ２２のゲートＧに接続され、コンデン
サ２３の一方の端子に接続されている。ＦＥＴ２２のソ
ースＳはコンデンサ２３の他方の端子と共に共通の電源
ライン２６に接続されている。ＦＥＴ２２のドレインＤ
は抵抗２４を介してＥＬ素子２０の陽極に接続され、Ｅ
Ｌ素子２０の陰極はアースに接続されている。電源ライ
ン２６及び各ＥＬ素子２０の陰極が接続されたアース
は、これらに電力を供給する定電圧源２５に接続されて
いる。This light emitting circuit 19 i, j has two FETs (F
ield Effect Transistor) 21, 22 and capacitor 23
And a resistor 24. The gate G of the FET 21 is
The source S of the FET 21 is connected to the address scan line Ai supplied with the address signal, and the source S of the FET 21 is connected to the data line Bj supplied with the data signal. The drain D of the FET 21 is connected to the gate G of the FET 22 and is connected to one terminal of the capacitor 23. The source S of the FET 22 is connected to the common power supply line 26 together with the other terminal of the capacitor 23. Drain of FET22
Is connected to the anode of the EL element 20 via the resistor 24, and E
The cathode of the L element 20 is connected to ground. The ground to which the power supply line 26 and the cathode of each EL element 20 are connected is connected to a constant voltage source 25 that supplies electric power to these.
【００１３】かかる発光回路１９i,jの発光制御動作に
ついて述べると、先ず、ＦＥＴ２１のゲートＧにデータ
ラインを介してオン電圧が供給されると、ＦＥＴ２１は
ソースＳに供給されるデータの電圧に対応した電流をソ
ースＳからドレインＤへ流す。ＦＥＴ２１のゲートＧが
オフ電圧であるとＦＥＴ２１はいわゆるカットオフとな
り、ＦＥＴ２１のドレインＤはオープン状態となる。従
って、ＦＥＴ２１のゲートＧがオン電圧の期間に、コン
デンサ２３は充電され、その電圧がＦＥＴ２２のゲート
Ｇに供給されて、ＦＥＴ２２はオン状態となる。ＦＥＴ
２２を線形領域で動作させることにより、抵抗２４とＥ
Ｌ素子２０とによって決定される駆動電流が定電圧源２
５からソースＳ・ドレインＤ間を流れ、そして抵抗２４
を介してＥＬ素子２０を流れてＥＬ素子２０を発光せし
める。また、ＦＥＴ２１のゲートＧがオフ電圧になる
と、ＦＥＴ２１はオープン状態となり、ＦＥＴ２２はコ
ンデンサ２３に蓄積された電荷によりゲートＧの電圧が
保持され、次の走査まで駆動電流を維持し、ＥＬ素子２
０の発光も維持される。The light emission control operation of the light emitting circuit 19 i, j will be described. First, when the ON voltage is supplied to the gate G of the FET 21 via the data line, the FET 21 becomes the voltage of the data supplied to the source S. A corresponding current is passed from the source S to the drain D. When the gate G of the FET 21 is off-voltage, the FET 21 is in a so-called cutoff state, and the drain D of the FET 21 is in an open state. Therefore, while the gate G of the FET 21 is on-voltage, the capacitor 23 is charged, the voltage is supplied to the gate G of the FET 22, and the FET 22 is turned on. FET
By operating 22 in the linear region, resistors 24 and E
The drive current determined by the L element 20 is the constant voltage source 2
5 from source S to drain D, and a resistor 24
The EL element 20 is caused to flow through the EL element 20 to emit light. Further, when the gate G of the FET 21 becomes an off voltage, the FET 21 is opened, and the FET 22 holds the voltage of the gate G by the charge accumulated in the capacitor 23, maintains the drive current until the next scan, and the EL element 2
The emission of 0 is also maintained.
【００１４】かかるアクティブマトリックス型表示パネ
ルの各発光回路においては、図８に示すように、ＥＬ素
子２０と直列に抵抗２４が挿入されたことにより、上記
の図３の回路構成と同様に時間経過に伴うＥＬ素子２０
のインピーダンスの変化が抑制され、この結果、駆動電
流の変化も小さくなり、発光輝度の急速な低下を防止す
ることができる。In each light emitting circuit of the active matrix type display panel, as shown in FIG. 8, a resistor 24 is inserted in series with the EL element 20, so that time elapses similarly to the circuit configuration of FIG. 3 described above. EL device 20 associated with
The change in impedance is suppressed, and as a result, the change in drive current is reduced, and a rapid decrease in light emission luminance can be prevented.
【００１５】なお、ＥＬ素子２０に抵抗２４を付加する
方法としては、ＴＦＴを形成している多結晶シリコンを
利用することが可能である。また、カラー表示のアクテ
ィブマトリックス型表示パネルにおいては１画素に対し
て３つの発光回路、すなわち赤発光回路、緑発光回路及
び青発光回路が形成される。この場合には３つの発光回
路各々においてＥＬ素子に挿入される抵抗はホワイトバ
ランスが崩れないように適切な抵抗値に個別に設定する
ことができる。As a method of adding the resistor 24 to the EL element 20, it is possible to use polycrystalline silicon forming the TFT. Further, in a color display active matrix type display panel, three light emitting circuits, that is, a red light emitting circuit, a green light emitting circuit and a blue light emitting circuit are formed for one pixel. In this case, the resistance inserted in the EL element in each of the three light emitting circuits can be individually set to an appropriate resistance value so that the white balance is not lost.
【００１６】また、上記した実施例おいては、ＥＬ素子
の陽極側に抵抗を挿入しているが、ＥＬ素子の陰極側に
挿入しても良い。Further, in the above embodiment, the resistor is inserted on the anode side of the EL element, but it may be inserted on the cathode side of the EL element.
【００１７】[0017]
【発明の効果】以上の如く、本発明によれば、経時変化
によるＥＬ素子のインピーダンス変化が抑制され、ＥＬ
素子の発光輝度の急速な低下を防止することができる。As described above, according to the present invention, the change in impedance of the EL element due to the change with time is suppressed, and the EL element
It is possible to prevent a rapid decrease in the emission brightness of the device.
【図１】ＥＬ素子の等価回路を示す図である。FIG. 1 is a diagram showing an equivalent circuit of an EL element.
【図２】ＥＬ素子の駆動電圧−電流−発光輝度特性を概
略的に示す図である。FIG. 2 is a diagram schematically showing drive voltage-current-light emission luminance characteristics of an EL element.
【図３】本発明の実施例を示す回路図である。FIG. 3 is a circuit diagram showing an embodiment of the present invention.
【図４】ＥＬ素子の時間−抵抗値特性図である。FIG. 4 is a time-resistance value characteristic diagram of an EL element.
【図５】ＥＬ素子の時間−電圧特性図である。FIG. 5 is a time-voltage characteristic diagram of an EL element.
【図６】ＥＬ素子の時間−電流特性図である。FIG. 6 is a time-current characteristic diagram of an EL element.
【図７】ＥＬ素子の時間−輝度特性図である。FIG. 7 is a time-luminance characteristic diagram of an EL element.
【図８】本発明の他の実施例を示す回路図である。FIG. 8 is a circuit diagram showing another embodiment of the present invention.
１１，２０ ＥＬ素子 １２，２４ 抵抗 １９i,j〜１９i+1,j+2 発光回路 ２１，２２ ＦＥＴ ２３ コンデンサ11, 20 EL element 12, 24 Resistance 19 i, j to 19 i + 1, j + 2 Light emitting circuit 21, 22 FET 23 Capacitor
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｇ０９Ｇ 3/30 Ｇ０９Ｇ 3/30 Ｊ Ｈ０５Ｂ 33/14 Ｈ０５Ｂ 33/14 Ａ Ｆターム(参考） 3K007 AB02 AB11 BA06 DA01 DB03 EB00 GA03 5C080 AA06 BB05 DD05 DD29 EE28 FF11 JJ02 JJ03 JJ05 5C094 AA31 BA03 BA12 BA27 CA19 CA24 DB01 DB04 DB10 EA04 FB01 FB20 GA10 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) G09G 3/30 G09G 3/30 J H05B 33/14 H05B 33/14 A F term (reference) 3K007 AB02 AB11 BA06 DA01 DB03 EB00 GA03 5C080 AA06 BB05 DD05 DD29 EE28 FF11 JJ02 JJ03 JJ05 5C094 AA31 BA03 BA12 BA27 CA19 CA24 DB01 DB04 DB10 EA04 FB01 FB20 GA10
Claims (4)
光駆動する駆動回路であって、 前記有機エレクトロルミネッセンス素子に直列に接続さ
れた抵抗と、 前記有機エレクトロルミネッセンス素子と前記抵抗との
直列回路に電圧を供給する電圧供給手段と、を備えたこ
とを特徴とする駆動回路。1. A drive circuit for driving an organic electroluminescent element to emit light, wherein a voltage is supplied to a resistor connected in series to the organic electroluminescent element and a series circuit of the organic electroluminescent element and the resistor. A drive circuit comprising: a voltage supply unit.
列に接続され定電圧源の出力電圧を前記直列回路にオン
時に印加するスイッチ素子とを有することを特徴とする
請求項１記載の駆動回路。2. The drive according to claim 1, wherein the voltage supply unit includes a switch element that is connected in series to the series circuit and applies an output voltage of a constant voltage source to the series circuit when the switch circuit is on. circuit.
動信号に応じてオンとなって前記キャパシタを充電させ
る第１スイッチ素子と、前記直列回路に直列に接続され
前記キャパシタの充電電圧に応じてオンとなって定電圧
源の出力電圧を前記直列回路に印加する第２スイッチ素
子と、を有することを特徴とする請求項１記載の駆動回
路。3. The voltage supply means includes a capacitor, a first switch element that is turned on in response to a drive signal to charge the capacitor, and is connected in series to the series circuit, according to a charging voltage of the capacitor. The drive circuit according to claim 1, further comprising a second switch element that is turned on and applies the output voltage of the constant voltage source to the series circuit.
組として複数組がマトリックス状に配置されて表示パネ
ルを形成していることを特徴とする請求項１記載の駆動
回路。4. The series circuit and the voltage supply means
2. The drive circuit according to claim 1, wherein a plurality of sets are arranged in a matrix to form a display panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001245214A JP2003059650A (en) | 2001-08-13 | 2001-08-13 | Drive circuit of organic electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001245214A JP2003059650A (en) | 2001-08-13 | 2001-08-13 | Drive circuit of organic electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003059650A true JP2003059650A (en) | 2003-02-28 |
Family
ID=19075009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001245214A Abandoned JP2003059650A (en) | 2001-08-13 | 2001-08-13 | Drive circuit of organic electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003059650A (en) |
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| JP2004347625A (en) * | 2003-03-26 | 2004-12-09 | Semiconductor Energy Lab Co Ltd | Element substrate and light emitting device |
| JP2005024758A (en) * | 2003-06-30 | 2005-01-27 | Semiconductor Energy Lab Co Ltd | Element substrate and light emitting device |
| JP2007011369A (en) * | 2005-06-30 | 2007-01-18 | Lg Philips Lcd Co Ltd | Electroluminescence display device and method for driving the electroluminescence display device |
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2001
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