JP2001060641A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To restrain defective semiconductor chips from occurring due to crackings or chippings generated in the edge of the semiconductor chip. SOLUTION: This device is equipped with a polyimide board 11, where a copper wiring 13 is formed on its one primary surface, connection holes which are provided to the polyimide board 11 and connected to the copper wiring 13, solder balls 15 which are each formed on the other primary surface of the polyimide board 11 connected to the copper wiring 13 through the intermediary of the connection holes, a semiconductor chip 1 which is bonded on one of primary surfaces of the polyimide board 11 facing downward, gold bumps 5 which are fixed to the semiconductor chip 1 and connected to the copper wiring 13, an anisotropic conductive film 7 arranged between the semiconductor chip 1 and the polyimide board 11, and a resin part 17 which covers the rear edges of the semiconductor chip 1. In this device, the read edges of the semiconductor chip 1 are covered with resin, so that the rear edges of the semiconductor chip 1 are prevented from being exposed completely to the outside by the resin.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device in which a semiconductor chip is face-down bonded to a substrate having a conductive pattern and an anisotropic conductive film formed on one main surface. The present invention relates to a semiconductor device and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 3 is a sectional view showing an example of a conventional semiconductor device (area array package).

This semiconductor device has a polyimide substrate 11, and a plated copper wiring 13 is formed on the upper surface of the polyimide substrate 11. In addition, polyimide substrate 1
1 is provided with a connection hole.
3 is connected. A solder ball 15 is attached to the lower surface of the polyimide substrate 11, and the solder ball 15 is connected to the copper wiring 13 through a connection hole. Copper wiring 1
3 and the polyimide substrate 11 have an anisotropic conductive film (Anis
(Totropic Conductive Film) 7 is disposed.

A semiconductor chip 1 is mounted on the upper surface of a polyimide substrate 11 by face-down bonding. The semiconductor chip 1 is provided with gold bumps 5, and the gold bumps 5 are electrically connected to copper wirings 13. A mark is printed on a mark printing section 4 on the back surface of the semiconductor chip 1.

Next, a method of manufacturing the semiconductor device shown in FIG. 3 will be described.

First, a semiconductor wafer having gold bumps 5 is prepared, and a plurality of semiconductor chips 1 are formed by dicing the semiconductor wafer.

After that, a polyimide substrate 11 having a copper wiring 13 and an anisotropic conductive film 7 formed on the upper surface is prepared, and a plurality of semiconductor chips 1 are face-down bonded on the upper surface side of the polyimide substrate 11. Thereby, the semiconductor chip 1 is electrically connected to the copper wiring 13 via the gold bump 5.

Next, a mark (not shown) is printed on the mark printing section 4 on the back surface of the semiconductor chip 1. Thereafter, solder balls 15 are mounted on the connection holes on the lower surface side of the polyimide substrate 11, and the solder balls are electrically connected to the copper wiring 13 through the connection holes.

Next, the polyimide substrate 11 is cut into individual semiconductor chips 1 by cutting. Thus, the semiconductor device shown in FIG. 3 is manufactured.

[0010]

By the way, in the above-mentioned conventional semiconductor device, the Si on the back surface and the side surface of the semiconductor chip 1 is formed.
Since the semiconductor chip 1 is exposed, cracks may occur in the semiconductor chip 1, and the cracks may reach the active surface of the semiconductor chip 1 and cause the semiconductor chip 1 to be defective. In addition, the crack often occurs particularly in a form in which the edge of the back surface of the semiconductor chip 1 is chipped.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device and a method of manufacturing the same in which chip defects due to cracks in the semiconductor chip are suppressed. It is in.

[0012]

In order to solve the above-mentioned problems, a semiconductor device according to the present invention comprises a substrate having a conductive pattern formed on one main surface, a substrate provided on the substrate, and connected to the conductive pattern. A connection terminal, a connection terminal formed on the other main surface of the substrate and connected to the conductive pattern through the connection hole, and a semiconductor chip face-down bonded on one main surface of the substrate And a bump attached to the semiconductor chip and connected to the conductive pattern, an anisotropic conductive film disposed between the semiconductor chip and the substrate, and an edge portion on a back surface of the semiconductor chip. And a resin.

In the above-described semiconductor device, the edge of the back surface of the semiconductor chip is covered with a resin, and the resin protects the edge of the back surface of the semiconductor chip from being exposed. For this reason, the occurrence of chipping or cracking at the edge of the semiconductor chip can be suppressed, and the chipping or cracking reaching the active surface of the semiconductor chip and causing the semiconductor chip to be defective can be suppressed.

A semiconductor device according to the present invention includes a substrate having a conductive pattern formed on one main surface, a connection hole provided in the substrate and connected to the conductive pattern, and a connection hole formed on the other main surface of the substrate. A connection terminal formed and connected to the conductive pattern through the connection hole, a semiconductor chip face-down bonded on one main surface of the substrate, and attached to the semiconductor chip, and connected to the conductive pattern. It is characterized by comprising a connected bump, an anisotropic conductive film disposed between the semiconductor chip and the substrate, and a resin covering the entire back surface and the entire side surface of the semiconductor chip. .

In the above-described semiconductor device, since not only the edge portion of the semiconductor chip but also the entire back surface and the entire side surface are covered with the resin, it is possible to suppress the occurrence of chip defects due to cracks in the semiconductor chip.

Further, in the semiconductor device according to the present invention,
The resin is preferably polyimide or epoxy. Preferably, the semiconductor device further includes a resin flow stopper formed around the substrate and extending on one main surface of the substrate.

A method of manufacturing a semiconductor device according to the present invention comprises the steps of preparing a semiconductor wafer having bumps, forming a semiconductor chip by dicing the semiconductor wafer, and forming a conductive pattern on one of the main surfaces. A step of preparing a substrate on which an anisotropic conductive film is formed; a step of face-down bonding the semiconductor chip on one main surface side of the substrate; and a step of potting a resin to an edge portion on a back surface of the semiconductor chip. And a step of baking the resin.

A method of manufacturing a semiconductor device according to the present invention includes a step of preparing a semiconductor wafer having bumps, a step of forming a semiconductor chip by dicing the semiconductor wafer, and a step of forming a conductive pattern on one main surface. A step of preparing a substrate on which an anisotropic conductive film is formed; a step of face-down bonding the semiconductor chip on one main surface side of the substrate; and a step of potting a resin on the entire back surface and side surfaces of the semiconductor chip. And baking the resin.

Further, in the method of manufacturing a semiconductor device according to the present invention, the substrate in the step of preparing the substrate is provided with a connection hole connected to the conductive pattern, and before the potting step or before the baking. Preferably, after the step, the method further includes a step of attaching a solder ball to the connection hole on the other main surface side of the substrate and connecting the solder ball to the conductive pattern via the connection hole. Preferably, the resin is polyimide or epoxy.

In the method of manufacturing a semiconductor device according to the present invention, a stopper for stopping the flow of resin in the potting step is formed on one main surface of the substrate in the step of preparing the substrate. Is preferred. This can prevent the potted resin from flowing down from the edge of the back surface of the semiconductor chip, and as a result, the edge can be sufficiently covered with the resin.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

This semiconductor device has a polyimide substrate 11, and a resin flow stopper 11a is formed around the polyimide substrate 11. This resin flow stopper 11a
Is formed on the upper surface of the polyimide substrate 11 so as to surround the semiconductor chip 1 described later. A wiring pattern 13 is formed on the upper surface of the polyimide substrate 11. As the wiring pattern 13, for example, plated copper wiring is used. Further, a connection hole is provided in the polyimide substrate 11, and the connection hole is connected to the wiring pattern 13. Connection terminals 15 are attached to the lower surface of the polyimide substrate 11, and the connection terminals 15 are, for example, solder balls. The connection terminal 15 is connected to the wiring pattern 13 via a connection hole. The anisotropic conductive film 7 is arranged on the wiring pattern 13 and the polyimide substrate 11.

The semiconductor chip 1 is mounted on the upper surface of the polyimide substrate 11 by face-down bonding. The semiconductor chip 1 is provided with a gold bump 5, and the gold bump 5 is electrically connected to the wiring pattern 13.

The edge portion and the side surface of the back surface of the semiconductor chip 1 are covered with a resin portion 17. As the resin portion 17, for example, polyimide or epoxy is used. Further, a mark is printed on a mark printing unit 4 on the back surface of the semiconductor chip 1.

According to the first embodiment, the resin portion 17 is provided at the edge of the back surface of the semiconductor chip 1 so that the resin portion 17 does not expose the edge of the back surface of the semiconductor chip. Protected. For this reason, the occurrence of chipping or cracking at the edge of the semiconductor chip as in the conventional semiconductor device can be suppressed. Therefore, it is possible to prevent the chip and the crack from reaching the active surface of the semiconductor chip and causing the semiconductor chip 1 to be defective.

Next, a method of manufacturing the semiconductor device shown in FIG. 1 will be described.

First, a semiconductor wafer having gold bumps 5 is prepared, and a plurality of semiconductor chips 1 are formed by dicing the semiconductor wafer.

Thereafter, the copper wiring 13 plated on the upper surface is formed.
The polyimide substrate 11 on which the anisotropic conductive film 7 is formed is prepared. A resin flow stopper 11 a is formed around the polyimide substrate 11.
a extends on the upper surface of the polyimide substrate 11. The polyimide substrate 11 has a connection hole connected to the copper wiring 13.

Next, a plurality of semiconductor chips 1 are face-down bonded on the upper surface side of the polyimide substrate 11. Thereby, the semiconductor chip 1 is electrically connected to the copper wiring 13 via the gold bump 5.

Thereafter, the resin 17 is potted (dropped) on the edge portion and the side surface of the back surface of the semiconductor chip 1. At this time, the resin flow stopper 11 a is provided around the polyimide substrate 11.
Is formed, the potted resin 17 can be prevented from flowing down from the edge of the back surface of the semiconductor chip 1, and as a result, the edge 17 can be sufficiently covered with the resin 17.

Next, by baking the resin 17 at a predetermined temperature, the resin portion 17 is formed on the edge portion and the side surface of the back surface of the semiconductor chip 1.

Thereafter, a mark (not shown) is printed on the mark printing section 4 on the back surface of the semiconductor chip 1. Next, a solder ball 15 is mounted on the connection hole on the lower surface side of the polyimide substrate 11, and the solder ball is electrically connected to the copper wiring 13 through the connection hole.

Next, the polyimide substrate 11 is cut to be separated into individual semiconductor chips 1. Thus, the semiconductor device shown in FIG. 1 is manufactured.

In the method of manufacturing a semiconductor device according to the first embodiment, after the semiconductor chip 1 is face-down bonded to the polyimide substrate 11, the resin portion 17 is attached to the edge portion and the side surface of the back surface of the semiconductor chip 1. Is formed, and then the mark printing is performed. After the semiconductor chip 1 is face-down bonded to the polyimide substrate 11 and the mark printing is performed, a resin portion is formed on the edge portion and the side surface of the back surface of the semiconductor chip 1. It is also possible to form the semiconductor chip 1 on the polyimide substrate 11 by face-down bonding, perform mark printing,
Solder ball 1 is placed on the connection hole on the lower side of polyimide substrate 11.
After attaching 5, the resin portion 17 can be formed on the edge portion and the side surface of the back surface of the semiconductor chip 1.

FIG. 2 is a sectional view showing a semiconductor device according to a second embodiment of the present invention. The same parts as those in FIG. 1 are denoted by the same reference numerals, and only different parts will be described.

The entire back surface and side surfaces of the semiconductor chip 1 are covered with a resin film 18. As the resin portion 18, for example, polyimide or epoxy is used.

In the second embodiment, the same effects as in the first embodiment can be obtained. In addition, not only the edges and side surfaces of the semiconductor chip 1 but also the entire back surface are covered with the resin film 18. Therefore, generation of cracks in the semiconductor chip 1 can be further suppressed.

Next, a method of manufacturing the semiconductor device shown in FIG. 2 will be described, but the description of the same parts as in the method of manufacturing the semiconductor device of FIG. 1 will be omitted.

After the semiconductor chip 1 is face-down bonded to the polyimide substrate 11, the semiconductor chip 1
The resin 18 is potted (dropped) on the entire back surface and the entire side surface. At this time, since the resin flow stopper 11a is formed around the polyimide substrate 11, the potted resin 18 can be prevented from flowing down from the side surface of the semiconductor chip 1, and as a result, the resin can be applied to the entire back surface and the entire side surface. 18 can be sufficiently coated.

Next, by baking the resin 18 at a predetermined temperature, the resin portion 18 is formed on the entire back surface and the entire side surface of the semiconductor chip 1.

Thereafter, a mark (not shown) is printed on the mark printing portion 4 of the resin portion on the back surface of the semiconductor chip 1. Next, after attaching the solder balls 15, the polyimide substrate 1
Cut 1 Thus, the semiconductor device shown in FIG. 2 is manufactured.

The present invention is not limited to the first and second embodiments, but can be implemented with various modifications. For example, the above embodiment can be applied to various area array packages.

In the above embodiment, the polyimide substrate 11 is used. However, another substrate can be used, and for example, a ceramic substrate can be used.

[0045]

As described above, according to the present invention, the edge of the back surface of the semiconductor chip is covered with the resin. Therefore, it is possible to provide a semiconductor device and a method of manufacturing the same in which the occurrence of chip failure due to cracks in the semiconductor chip is suppressed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 3 shows a conventional semiconductor device (area array package)
FIG. 3 is a cross-sectional view showing one example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 4 Mark printing part 5 Gold bump 7 Anisotropic conductive film 11 Polyimide substrate 11a Resin flow stop part 13 Copper wiring 15 Solder ball 17 Resin part 18 Resin film

Claims (9)

[Claims] A substrate having a conductive pattern formed on one main surface thereof; a connection hole provided on the substrate and connected to the conductive pattern; and a connection hole formed on the other main surface of the substrate. A connection terminal connected to the conductive pattern via a, a semiconductor chip face-down bonded on one main surface of the substrate, and a bump attached to the semiconductor chip and connected to the conductive pattern, A semiconductor device, comprising: an anisotropic conductive film disposed between the semiconductor chip and the substrate; and a resin coated on an edge of a back surface of the semiconductor chip. 2. A substrate having a conductive pattern formed on one main surface, a connection hole provided on the substrate and connected to the conductive pattern, and a connection hole formed on the other main surface of the substrate. A connection terminal connected to the conductive pattern via a, a semiconductor chip face-down bonded on one main surface of the substrate, and a bump attached to the semiconductor chip and connected to the conductive pattern, A semiconductor device, comprising: an anisotropic conductive film disposed between the semiconductor chip and the substrate; and a resin covering the entire back surface and side surfaces of the semiconductor chip. 3. The semiconductor device according to claim 1, wherein said resin is polyimide or epoxy. 4. The semiconductor according to claim 1, further comprising a resin flow stopper formed around the substrate and extending on one main surface of the substrate. apparatus. 5. A step of preparing a semiconductor wafer having bumps; a step of forming a semiconductor chip by dicing the semiconductor wafer; and a step of forming a conductive pattern and an anisotropic conductive film on one main surface. A step of preparing a substrate; a step of face-down bonding the semiconductor chip to one main surface side of the substrate; a step of potting a resin to an edge of a back surface of the semiconductor chip; and a step of baking the resin A method for manufacturing a semiconductor device, comprising: 6. A step of preparing a semiconductor wafer having bumps; a step of forming a semiconductor chip by dicing the semiconductor wafer; and a step of forming a conductive pattern and an anisotropic conductive film on one main surface. A step of preparing a substrate; a step of face-down bonding the semiconductor chip on one main surface side of the substrate; a step of potting a resin on the entire back surface and side surfaces of the semiconductor chip; and baking the resin A method for manufacturing a semiconductor device, comprising: 7. The substrate in the step of preparing the substrate is provided with a connection hole connected to the conductive pattern, and the other main surface of the substrate is provided before the step of potting or after the step of baking. 7. The method of manufacturing a semiconductor device according to claim 5, further comprising a step of attaching a solder ball to the connection hole on the side and connecting the solder ball to the conductive pattern through the connection hole. 8. The method according to claim 5, wherein said resin is polyimide or epoxy. 9. The method according to claim 5, wherein a stop portion for stopping the flow of the resin in the step of potting is formed on one main surface of the substrate in the step of preparing the substrate. A semiconductor device according to any one of the preceding claims.