IT1398204B1 - Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias). - Google Patents
Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias).Info
- Publication number
- IT1398204B1 IT1398204B1 ITTO2010A000109A ITTO20100109A IT1398204B1 IT 1398204 B1 IT1398204 B1 IT 1398204B1 IT TO2010A000109 A ITTO2010A000109 A IT TO2010A000109A IT TO20100109 A ITTO20100109 A IT TO20100109A IT 1398204 B1 IT1398204 B1 IT 1398204B1
- Authority
- IT
- Italy
- Prior art keywords
- silicon
- tsv
- perform
- electric test
- vias
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
- G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2010A000109A IT1398204B1 (it) | 2010-02-16 | 2010-02-16 | Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias). |
CN201180008062.1A CN102782839B (zh) | 2010-02-16 | 2011-02-16 | 用于硅通孔(tsv)的电测试的系统和方法 |
CN201510316863.4A CN104916622B (zh) | 2010-02-16 | 2011-02-16 | 半导体材料的主体和用于制造半导体材料的主体的方法 |
PCT/EP2011/052319 WO2011101393A1 (en) | 2010-02-16 | 2011-02-16 | SYSTEM AND METHOD FOR ELECTRICAL TESTING OF THROUGH SILICON VIAS (TSVs) |
US13/579,562 US9111895B2 (en) | 2010-02-16 | 2011-02-16 | System and method for electrical testing of through silicon vias (TSVs) |
US14/827,796 US9874598B2 (en) | 2010-02-16 | 2015-08-17 | System and method for electrical testing of through silicon vias (TSVs) |
US15/841,585 US10775426B2 (en) | 2010-02-16 | 2017-12-14 | System and method for electrical testing of through silicon vias (TSVs) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2010A000109A IT1398204B1 (it) | 2010-02-16 | 2010-02-16 | Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias). |
Publications (2)
Publication Number | Publication Date |
---|---|
ITTO20100109A1 ITTO20100109A1 (it) | 2011-08-17 |
IT1398204B1 true IT1398204B1 (it) | 2013-02-14 |
Family
ID=42648051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITTO2010A000109A IT1398204B1 (it) | 2010-02-16 | 2010-02-16 | Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias). |
Country Status (4)
Country | Link |
---|---|
US (3) | US9111895B2 (it) |
CN (2) | CN102782839B (it) |
IT (1) | IT1398204B1 (it) |
WO (1) | WO2011101393A1 (it) |
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2010
- 2010-02-16 IT ITTO2010A000109A patent/IT1398204B1/it active
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2011
- 2011-02-16 US US13/579,562 patent/US9111895B2/en active Active
- 2011-02-16 CN CN201180008062.1A patent/CN102782839B/zh active Active
- 2011-02-16 CN CN201510316863.4A patent/CN104916622B/zh active Active
- 2011-02-16 WO PCT/EP2011/052319 patent/WO2011101393A1/en active Application Filing
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2015
- 2015-08-17 US US14/827,796 patent/US9874598B2/en active Active
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2017
- 2017-12-14 US US15/841,585 patent/US10775426B2/en active Active
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US20150355267A1 (en) | 2015-12-10 |
US10775426B2 (en) | 2020-09-15 |
US9874598B2 (en) | 2018-01-23 |
CN102782839A (zh) | 2012-11-14 |
CN104916622A (zh) | 2015-09-16 |
CN102782839B (zh) | 2015-07-15 |
WO2011101393A1 (en) | 2011-08-25 |
US20130057312A1 (en) | 2013-03-07 |
US9111895B2 (en) | 2015-08-18 |
US20180106854A1 (en) | 2018-04-19 |
CN104916622B (zh) | 2019-01-04 |
ITTO20100109A1 (it) | 2011-08-17 |
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