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IT1398204B1 - Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias). - Google Patents

Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias).

Info

Publication number
IT1398204B1
IT1398204B1 ITTO2010A000109A ITTO20100109A IT1398204B1 IT 1398204 B1 IT1398204 B1 IT 1398204B1 IT TO2010A000109 A ITTO2010A000109 A IT TO2010A000109A IT TO20100109 A ITTO20100109 A IT TO20100109A IT 1398204 B1 IT1398204 B1 IT 1398204B1
Authority
IT
Italy
Prior art keywords
silicon
tsv
perform
electric test
vias
Prior art date
Application number
ITTO2010A000109A
Other languages
English (en)
Inventor
Alberto Pagani
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITTO2010A000109A priority Critical patent/IT1398204B1/it
Priority to CN201180008062.1A priority patent/CN102782839B/zh
Priority to CN201510316863.4A priority patent/CN104916622B/zh
Priority to PCT/EP2011/052319 priority patent/WO2011101393A1/en
Priority to US13/579,562 priority patent/US9111895B2/en
Publication of ITTO20100109A1 publication Critical patent/ITTO20100109A1/it
Application granted granted Critical
Publication of IT1398204B1 publication Critical patent/IT1398204B1/it
Priority to US14/827,796 priority patent/US9874598B2/en
Priority to US15/841,585 priority patent/US10775426B2/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/27Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G01R31/275Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2853Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
ITTO2010A000109A 2010-02-16 2010-02-16 Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias). IT1398204B1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
ITTO2010A000109A IT1398204B1 (it) 2010-02-16 2010-02-16 Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias).
CN201180008062.1A CN102782839B (zh) 2010-02-16 2011-02-16 用于硅通孔(tsv)的电测试的系统和方法
CN201510316863.4A CN104916622B (zh) 2010-02-16 2011-02-16 半导体材料的主体和用于制造半导体材料的主体的方法
PCT/EP2011/052319 WO2011101393A1 (en) 2010-02-16 2011-02-16 SYSTEM AND METHOD FOR ELECTRICAL TESTING OF THROUGH SILICON VIAS (TSVs)
US13/579,562 US9111895B2 (en) 2010-02-16 2011-02-16 System and method for electrical testing of through silicon vias (TSVs)
US14/827,796 US9874598B2 (en) 2010-02-16 2015-08-17 System and method for electrical testing of through silicon vias (TSVs)
US15/841,585 US10775426B2 (en) 2010-02-16 2017-12-14 System and method for electrical testing of through silicon vias (TSVs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2010A000109A IT1398204B1 (it) 2010-02-16 2010-02-16 Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias).

Publications (2)

Publication Number Publication Date
ITTO20100109A1 ITTO20100109A1 (it) 2011-08-17
IT1398204B1 true IT1398204B1 (it) 2013-02-14

Family

ID=42648051

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2010A000109A IT1398204B1 (it) 2010-02-16 2010-02-16 Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias).

Country Status (4)

Country Link
US (3) US9111895B2 (it)
CN (2) CN102782839B (it)
IT (1) IT1398204B1 (it)
WO (1) WO2011101393A1 (it)

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Also Published As

Publication number Publication date
US20150355267A1 (en) 2015-12-10
US10775426B2 (en) 2020-09-15
US9874598B2 (en) 2018-01-23
CN102782839A (zh) 2012-11-14
CN104916622A (zh) 2015-09-16
CN102782839B (zh) 2015-07-15
WO2011101393A1 (en) 2011-08-25
US20130057312A1 (en) 2013-03-07
US9111895B2 (en) 2015-08-18
US20180106854A1 (en) 2018-04-19
CN104916622B (zh) 2019-01-04
ITTO20100109A1 (it) 2011-08-17

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