HK1169492A1 - Exposure apparatus, exposure method and device manufacturing method - Google Patents
Exposure apparatus, exposure method and device manufacturing methodInfo
- Publication number
- HK1169492A1 HK1169492A1 HK12110241.2A HK12110241A HK1169492A1 HK 1169492 A1 HK1169492 A1 HK 1169492A1 HK 12110241 A HK12110241 A HK 12110241A HK 1169492 A1 HK1169492 A1 HK 1169492A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- exposure
- device manufacturing
- exposure apparatus
- exposure method
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70766—Reaction force control means, e.g. countermass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21846009P | 2009-06-19 | 2009-06-19 | |
JP2009145959 | 2009-06-19 | ||
JP2009145967 | 2009-06-19 | ||
US12/818,386 US8446569B2 (en) | 2009-06-19 | 2010-06-18 | Exposure apparatus, exposure method and device manufacturing method |
PCT/JP2010/060923 WO2010147243A2 (en) | 2009-06-19 | 2010-06-21 | Exposure apparatus, exposure method and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1169492A1 true HK1169492A1 (en) | 2013-01-25 |
Family
ID=43356839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK12110241.2A HK1169492A1 (en) | 2009-06-19 | 2012-10-17 | Exposure apparatus, exposure method and device manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US8446569B2 (xx) |
JP (1) | JP5348628B2 (xx) |
KR (2) | KR101805209B1 (xx) |
CN (1) | CN102460307B (xx) |
HK (1) | HK1169492A1 (xx) |
TW (1) | TWI536111B (xx) |
WO (1) | WO2010147243A2 (xx) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5464186B2 (ja) * | 2011-09-07 | 2014-04-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
US9678433B2 (en) * | 2012-10-02 | 2017-06-13 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method |
KR102080875B1 (ko) | 2013-01-23 | 2020-04-16 | 삼성디스플레이 주식회사 | 스테이지 이송 장치 및 이를 이용한 스테이지 위치 측정 방법 |
JP5582267B1 (ja) * | 2014-01-17 | 2014-09-03 | 株式会社東光高岳 | 連続走査型計測装置 |
US9977348B2 (en) * | 2014-08-15 | 2018-05-22 | Asml Netherlands B.V. | Lithographic apparatus and method |
CN109791364B (zh) * | 2016-09-30 | 2021-04-27 | 株式会社尼康 | 移动体装置、移动方法、曝光装置、曝光方法、平板显示器的制造方法、以及元件制造方法 |
CN109269544B (zh) * | 2018-09-27 | 2021-01-29 | 中国人民解放军国防科技大学 | 中低速磁浮车辆悬浮传感器巡检系统 |
CN112902832B (zh) * | 2021-01-19 | 2023-08-25 | 上海集成电路装备材料产业创新中心有限公司 | 柱形光栅干涉仪及读数头总成装置 |
CN112835269B (zh) * | 2021-01-19 | 2024-04-12 | 上海集成电路装备材料产业创新中心有限公司 | 一种光刻装置及曝光方法 |
CN114683223B (zh) * | 2022-03-29 | 2023-01-06 | 苏州矽行半导体技术有限公司 | 一种晶圆载台 |
CN114683227B (zh) * | 2022-03-29 | 2023-01-06 | 苏州矽行半导体技术有限公司 | 一种晶圆载台 |
Family Cites Families (36)
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JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
US4780617A (en) | 1984-08-09 | 1988-10-25 | Nippon Kogaku K.K. | Method for successive alignment of chip patterns on a substrate |
JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
EP1450208A1 (en) | 1997-03-10 | 2004-08-25 | ASML Netherlands B.V. | Lithographic apparatus having two object holders |
CN100578876C (zh) | 1998-03-11 | 2010-01-06 | 株式会社尼康 | 紫外激光装置以及使用该紫外激光装置的曝光装置和曝光方法 |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2001102429A (ja) * | 1999-07-29 | 2001-04-13 | Nikon Corp | ステージ装置およびそれを備えた検査装置 |
WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
TW546699B (en) | 2000-02-25 | 2003-08-11 | Nikon Corp | Exposure apparatus and exposure method capable of controlling illumination distribution |
US6437463B1 (en) | 2000-04-24 | 2002-08-20 | Nikon Corporation | Wafer positioner with planar motor and mag-lev fine stage |
US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
JP4714403B2 (ja) | 2001-02-27 | 2011-06-29 | エーエスエムエル ユーエス,インコーポレイテッド | デュアルレチクルイメージを露光する方法および装置 |
US20030085676A1 (en) | 2001-06-28 | 2003-05-08 | Michael Binnard | Six degree of freedom control of planar motors |
TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
US6927505B2 (en) * | 2001-12-19 | 2005-08-09 | Nikon Corporation | Following stage planar motor |
CN100345252C (zh) | 2002-01-29 | 2007-10-24 | 株式会社尼康 | 成像状态调节系统、曝光方法和曝光装置以及程序和信息存储介质 |
JP4234964B2 (ja) * | 2002-09-10 | 2009-03-04 | 株式会社オーク製作所 | 露光装置 |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
KR20050085235A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI338912B (en) | 2003-05-12 | 2011-03-11 | Nikon Corp | Stage device and exposing device |
DE602004020634D1 (de) * | 2003-08-07 | 2009-05-28 | Nippon Kogaku Kk | Belichtungsverfahren |
CN1950929B (zh) | 2004-03-25 | 2011-05-25 | 株式会社尼康 | 曝光装置及曝光方法、以及组件制造方法 |
KR101206671B1 (ko) | 2004-04-09 | 2012-11-29 | 가부시키가이샤 니콘 | 이동체의 구동 방법, 스테이지 장치 및 노광 장치 |
JP2005327993A (ja) | 2004-05-17 | 2005-11-24 | Canon Inc | 位置決め装置、露光装置及びデバイス製造方法 |
CN1719339A (zh) * | 2004-07-09 | 2006-01-11 | 富士胶片株式会社 | 曝光装置以及曝光方法 |
JP4656448B2 (ja) | 2004-09-30 | 2011-03-23 | 株式会社ニコン | 投影光学装置及び露光装置 |
WO2007040254A1 (ja) | 2005-10-05 | 2007-04-12 | Nikon Corporation | 露光装置及び露光方法 |
EP2963498B8 (en) | 2006-01-19 | 2017-07-26 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
KR101342765B1 (ko) | 2006-02-21 | 2013-12-19 | 가부시키가이샤 니콘 | 패턴 형성 장치, 마크 검출 장치, 노광 장치, 패턴 형성 방법, 노광 방법 및 디바이스 제조 방법 |
JP5120377B2 (ja) | 2006-09-29 | 2013-01-16 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
KR101360507B1 (ko) | 2006-09-29 | 2014-02-07 | 가부시키가이샤 니콘 | 이동체 시스템, 패턴 형성 장치, 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
JP5151989B2 (ja) | 2006-11-09 | 2013-02-27 | 株式会社ニコン | 保持装置、位置検出装置及び露光装置、並びにデバイス製造方法 |
US7903866B2 (en) * | 2007-03-29 | 2011-03-08 | Asml Netherlands B.V. | Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object |
CN101828149B (zh) | 2007-10-19 | 2013-03-27 | 皇家飞利浦电子股份有限公司 | 具有精密位置测量的移位装置 |
US8773635B2 (en) * | 2008-12-19 | 2014-07-08 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
JP2013509692A (ja) * | 2009-10-30 | 2013-03-14 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
-
2010
- 2010-06-18 US US12/818,386 patent/US8446569B2/en active Active
- 2010-06-21 KR KR1020127001445A patent/KR101805209B1/ko active IP Right Grant
- 2010-06-21 CN CN201080036624.9A patent/CN102460307B/zh active Active
- 2010-06-21 WO PCT/JP2010/060923 patent/WO2010147243A2/en active Application Filing
- 2010-06-21 KR KR1020177034377A patent/KR20170134785A/ko not_active Application Discontinuation
- 2010-06-21 JP JP2011550366A patent/JP5348628B2/ja active Active
- 2010-06-21 TW TW099120066A patent/TWI536111B/zh active
-
2012
- 2012-10-17 HK HK12110241.2A patent/HK1169492A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR101805209B1 (ko) | 2017-12-05 |
KR20170134785A (ko) | 2017-12-06 |
TWI536111B (zh) | 2016-06-01 |
CN102460307B (zh) | 2015-08-12 |
WO2010147243A2 (en) | 2010-12-23 |
WO2010147243A3 (en) | 2011-12-22 |
TW201109857A (en) | 2011-03-16 |
US20110008717A1 (en) | 2011-01-13 |
KR20120037943A (ko) | 2012-04-20 |
JP2012531029A (ja) | 2012-12-06 |
US8446569B2 (en) | 2013-05-21 |
CN102460307A (zh) | 2012-05-16 |
JP5348628B2 (ja) | 2013-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20230615 |