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DE602004020634D1 - Belichtungsverfahren - Google Patents

Belichtungsverfahren

Info

Publication number
DE602004020634D1
DE602004020634D1 DE602004020634T DE602004020634T DE602004020634D1 DE 602004020634 D1 DE602004020634 D1 DE 602004020634D1 DE 602004020634 T DE602004020634 T DE 602004020634T DE 602004020634 T DE602004020634 T DE 602004020634T DE 602004020634 D1 DE602004020634 D1 DE 602004020634D1
Authority
DE
Germany
Prior art keywords
wafer
wafer stage
interchange
stages
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004020634T
Other languages
English (en)
Inventor
Yuichi Shibazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Publication of DE602004020634D1 publication Critical patent/DE602004020634D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602004020634T 2003-08-07 2004-08-05 Belichtungsverfahren Expired - Fee Related DE602004020634D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003288919 2003-08-07
PCT/JP2004/011244 WO2005015615A1 (ja) 2003-08-07 2004-08-05 露光方法及び露光装置、ステージ装置、並びにデバイス製造方法

Publications (1)

Publication Number Publication Date
DE602004020634D1 true DE602004020634D1 (de) 2009-05-28

Family

ID=34131533

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004020634T Expired - Fee Related DE602004020634D1 (de) 2003-08-07 2004-08-05 Belichtungsverfahren

Country Status (9)

Country Link
US (3) US20060187431A1 (de)
EP (2) EP1995769A1 (de)
JP (2) JP4552146B2 (de)
KR (2) KR101181684B1 (de)
CN (2) CN100468624C (de)
AT (1) ATE429031T1 (de)
DE (1) DE602004020634D1 (de)
TW (1) TW200511390A (de)
WO (1) WO2005015615A1 (de)

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EP1717845A4 (de) * 2004-02-19 2010-06-23 Nikon Corp Belichtungsvorrichtung und belichtungsverfahren und bauelementeherstellungsverfahren
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
CN101176201B (zh) * 2005-05-18 2011-04-27 株式会社村田制作所 定位载物台、使用该定位载物台的凸瘤形成装置和凸瘤形成方法
KR101254796B1 (ko) * 2005-12-29 2013-04-15 엘지전자 주식회사 노광장치 및 그 제어방법
CN100456138C (zh) * 2006-06-13 2009-01-28 上海微电子装备有限公司 浸没式光刻机浸液流场维持系统
JP2008021748A (ja) * 2006-07-11 2008-01-31 Canon Inc 露光装置
JP5151989B2 (ja) * 2006-11-09 2013-02-27 株式会社ニコン 保持装置、位置検出装置及び露光装置、並びにデバイス製造方法
US7973910B2 (en) * 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
JP2008140992A (ja) * 2006-12-01 2008-06-19 Canon Inc 露光装置
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
JP4992668B2 (ja) * 2007-10-31 2012-08-08 旭硝子株式会社 容器交換装置および容器交換方法
JP2009284608A (ja) * 2008-05-20 2009-12-03 Canon Inc パルスモータ、位置決め装置、露光装置及びデバイス製造方法
US8994923B2 (en) * 2008-09-22 2015-03-31 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8508735B2 (en) 2008-09-22 2013-08-13 Nikon Corporation Movable body apparatus, movable body drive method, exposure apparatus, exposure method, and device manufacturing method
US8325325B2 (en) * 2008-09-22 2012-12-04 Nikon Corporation Movable body apparatus, movable body drive method, exposure apparatus, exposure method, and device manufacturing method
US8902402B2 (en) * 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8760629B2 (en) * 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
CN101551599B (zh) * 2009-04-03 2011-07-20 清华大学 一种光刻机硅片台双台交换系统
CN101551598B (zh) 2009-04-03 2010-12-01 清华大学 一种光刻机硅片台双台交换系统
CN101571676B (zh) * 2009-04-03 2010-12-01 清华大学 一种光刻机硅片台双台交换系统
US8970820B2 (en) 2009-05-20 2015-03-03 Nikon Corporation Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method
US8792084B2 (en) * 2009-05-20 2014-07-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8553204B2 (en) 2009-05-20 2013-10-08 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8446569B2 (en) * 2009-06-19 2013-05-21 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
IT1399285B1 (it) * 2009-07-03 2013-04-11 Applied Materials Inc Sistema di lavorazione substrato
US20110096312A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110096306A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110102761A1 (en) * 2009-09-28 2011-05-05 Nikon Corporation Stage apparatus, exposure apparatus, and device fabricating method
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110123913A1 (en) * 2009-11-19 2011-05-26 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
US20110128523A1 (en) * 2009-11-19 2011-06-02 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
CN101727019B (zh) * 2009-12-15 2011-05-11 清华大学 光刻机硅片台双台交换系统及其交换方法
CN101963763B (zh) * 2010-08-03 2012-06-06 哈尔滨工业大学 一种基于双驱双桥换台工位的双工件台高精度交换装置
CN102789143A (zh) * 2011-05-17 2012-11-21 川宝科技股份有限公司 曝光机标靶影像对位装置及使用该装置的曝光机
TWI650612B (zh) * 2011-08-30 2019-02-11 尼康股份有限公司 基板處理裝置及基板處理方法、以及元件製造方法、及平板顯示器之製造方法
CN104685095B (zh) 2012-04-19 2017-12-29 因特瓦克公司 用于制造太阳能电池的双掩模装置
KR102072872B1 (ko) 2012-04-26 2020-02-03 인테벡, 인코포레이티드 진공 처리용 시스템 아키텍처
US10062600B2 (en) 2012-04-26 2018-08-28 Intevac, Inc. System and method for bi-facial processing of substrates
JP6082884B2 (ja) * 2012-06-12 2017-02-22 サンエー技研株式会社 露光装置、露光方法
TWM523958U (zh) * 2014-08-01 2016-06-11 應用材料股份有限公司 用於執行光刻製程的處理系統
JP6607923B2 (ja) 2014-08-05 2019-11-20 インテヴァック インコーポレイテッド 注入マスク及びアライメント
JP6655925B2 (ja) * 2015-09-24 2020-03-04 東京エレクトロン株式会社 ステージ装置及びプローブ装置
CN105607428B (zh) * 2015-12-30 2018-04-17 深圳市鑫富宝科技有限公司 一种自动曝光机机构
JP6353487B2 (ja) * 2016-05-26 2018-07-04 株式会社サーマプレシジョン 投影露光装置及びその投影露光方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
WO2018180969A1 (ja) * 2017-03-31 2018-10-04 株式会社ニコン 物体交換装置、物体処理装置、フラットパネルディスプレイの製造方法、デバイス製造方法、物体交換方法、及び物体処理方法
CN109240048A (zh) * 2018-11-06 2019-01-18 无锡影速半导体科技有限公司 一种多工位工件台一次曝光成型直写光刻系统
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Also Published As

Publication number Publication date
US20090251679A1 (en) 2009-10-08
JPWO2005015615A1 (ja) 2007-10-04
US20100177295A1 (en) 2010-07-15
CN101504512A (zh) 2009-08-12
EP1995769A1 (de) 2008-11-26
ATE429031T1 (de) 2009-05-15
TWI343594B (de) 2011-06-11
TW200511390A (en) 2005-03-16
US20060187431A1 (en) 2006-08-24
WO2005015615A1 (ja) 2005-02-17
KR20110106424A (ko) 2011-09-28
KR20060054426A (ko) 2006-05-22
CN101504512B (zh) 2012-11-14
JP4552146B2 (ja) 2010-09-29
EP1655765A1 (de) 2006-05-10
JP2009147385A (ja) 2009-07-02
EP1655765A4 (de) 2008-01-30
KR101181684B1 (ko) 2012-09-19
KR101205263B1 (ko) 2012-11-27
EP1655765B1 (de) 2009-04-15
CN1833309A (zh) 2006-09-13
CN100468624C (zh) 2009-03-11
JP5152067B2 (ja) 2013-02-27

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