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GB1029473A - Improvements in or relating to the production of ultra-pure silicon carbide - Google Patents

Improvements in or relating to the production of ultra-pure silicon carbide

Info

Publication number
GB1029473A
GB1029473A GB8164/63A GB816463A GB1029473A GB 1029473 A GB1029473 A GB 1029473A GB 8164/63 A GB8164/63 A GB 8164/63A GB 816463 A GB816463 A GB 816463A GB 1029473 A GB1029473 A GB 1029473A
Authority
GB
United Kingdom
Prior art keywords
silicon
silicon carbide
ultra
methane
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8164/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1029473A publication Critical patent/GB1029473A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Ultra-pine silicon carbide is prepared by deposition on to a support maintained at a temperature of at least 1150 DEG C. from a gas phase mixture of a silicon halide or silicon hydride halide and one or more hydrocarbons and/or halogenated hydrocarbons in quantities such that the atomic ratio of silicon to carbon is greater than 1. The silicon compound may be silicon tetrachloride or silicochloroform on the corresponding bromides or isotides. Hydrocarbon compounds referred to are methane, ethane, propane, ethylene and acetylene; compounds exemplified are methane and carbon tetrachloride. The silicon carbide may be doped using one or more of PCl3, BBr3, BCl3, amines, phosphines, and alkyls of Group III elements, for example, Al, B. The supports may be graphite, tantalum, silicon or silicon carbide. Reference has been directed by the Comptroller to Specification 928,683.
GB8164/63A 1962-03-06 1963-02-28 Improvements in or relating to the production of ultra-pure silicon carbide Expired GB1029473A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES78347A DE1215665B (en) 1962-03-06 1962-03-06 Process for producing high purity silicon carbide

Publications (1)

Publication Number Publication Date
GB1029473A true GB1029473A (en) 1966-05-11

Family

ID=7507399

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8164/63A Expired GB1029473A (en) 1962-03-06 1963-02-28 Improvements in or relating to the production of ultra-pure silicon carbide

Country Status (3)

Country Link
BE (1) BE629139A (en)
DE (1) DE1215665B (en)
GB (1) GB1029473A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023071626A (en) * 2021-11-11 2023-05-23 オーシーアイ カンパニー リミテッド METHOD FOR PRODUCING HIGH-PURITY SiC CRYSTALS

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1228235B (en) * 1964-03-02 1966-11-10 Siemens Ag Process for the production of single crystal rods from silicon carbide
DE1236482B (en) * 1964-03-02 1967-03-16 Siemens Ag Process for producing single-crystal layers from preferably hexagonal silicon carbide
CN106044774B (en) * 2016-05-31 2018-02-27 上海纳晶科技有限公司 A kind of preparation method of low temperature low cost high-purity silicon carbide ultrafine dust

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023071626A (en) * 2021-11-11 2023-05-23 オーシーアイ カンパニー リミテッド METHOD FOR PRODUCING HIGH-PURITY SiC CRYSTALS
EP4190748A1 (en) 2021-11-11 2023-06-07 OCI Company Ltd. Method of manufacturing high-purity sic crystal

Also Published As

Publication number Publication date
DE1215665B (en) 1966-05-05
BE629139A (en)

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