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FR2875338B1 - Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul - Google Patents

Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul

Info

Publication number
FR2875338B1
FR2875338B1 FR0503173A FR0503173A FR2875338B1 FR 2875338 B1 FR2875338 B1 FR 2875338B1 FR 0503173 A FR0503173 A FR 0503173A FR 0503173 A FR0503173 A FR 0503173A FR 2875338 B1 FR2875338 B1 FR 2875338B1
Authority
FR
France
Prior art keywords
structures
barrier layer
alloys
zero
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0503173A
Other languages
English (en)
Other versions
FR2875338A1 (fr
Inventor
Hacene Lahreche
Philippe Bove
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
PICOGIGA INTERNAT SOC PAR ACTI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0409674A external-priority patent/FR2875337A1/fr
Application filed by PICOGIGA INTERNAT SOC PAR ACTI filed Critical PICOGIGA INTERNAT SOC PAR ACTI
Priority to FR0503173A priority Critical patent/FR2875338B1/fr
Priority to PCT/EP2005/054559 priority patent/WO2006030014A1/fr
Priority to KR1020077003503A priority patent/KR100930639B1/ko
Priority to JP2007530721A priority patent/JP2008512863A/ja
Priority to TW094131551A priority patent/TWI309088B/zh
Priority to EP05784616A priority patent/EP1800346B1/fr
Priority to AT05784616T priority patent/ATE543218T1/de
Publication of FR2875338A1 publication Critical patent/FR2875338A1/fr
Publication of FR2875338B1 publication Critical patent/FR2875338B1/fr
Application granted granted Critical
Priority to US11/684,925 priority patent/US20070164299A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
FR0503173A 2004-09-13 2005-03-31 Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul Active FR2875338B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0503173A FR2875338B1 (fr) 2004-09-13 2005-03-31 Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul
TW094131551A TWI309088B (en) 2004-09-13 2005-09-13 Hemt piezoelectric structures with zero alloy disorder
KR1020077003503A KR100930639B1 (ko) 2004-09-13 2005-09-13 합금 무질서가 없는 ｈｅｍｔ 압전 구조물
JP2007530721A JP2008512863A (ja) 2004-09-13 2005-09-13 合金無秩序のないｈｅｍｔ圧電構造
PCT/EP2005/054559 WO2006030014A1 (fr) 2004-09-13 2005-09-13 Structures piezo-electriques de type hemt a zero desordre d'alliage
EP05784616A EP1800346B1 (fr) 2004-09-13 2005-09-13 Structures piezo-electriques de type hemt a zero desordre d'alliage
AT05784616T ATE543218T1 (de) 2004-09-13 2005-09-13 Piezoelektrische hemt-strukturen mit nulllegierungsunordnung
US11/684,925 US20070164299A1 (en) 2004-09-13 2007-03-12 Hemt piezoelectric structures with zero alloy disorder

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0409674A FR2875337A1 (fr) 2004-09-13 2004-09-13 Structures hemt piezoelectriques a desordre d'alliage nul
FR0503173A FR2875338B1 (fr) 2004-09-13 2005-03-31 Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul

Publications (2)

Publication Number Publication Date
FR2875338A1 FR2875338A1 (fr) 2006-03-17
FR2875338B1 true FR2875338B1 (fr) 2007-01-05

Family

ID=35106688

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0503173A Active FR2875338B1 (fr) 2004-09-13 2005-03-31 Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul

Country Status (8)

Country Link
US (1) US20070164299A1 (fr)
EP (1) EP1800346B1 (fr)
JP (1) JP2008512863A (fr)
KR (1) KR100930639B1 (fr)
AT (1) ATE543218T1 (fr)
FR (1) FR2875338B1 (fr)
TW (1) TWI309088B (fr)
WO (1) WO2006030014A1 (fr)

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FR2875338B1 (fr) * 2004-09-13 2007-01-05 Picogiga Internat Soc Par Acti Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul
WO2009001888A1 (fr) * 2007-06-27 2008-12-31 Nec Corporation Transistor à effet de champ et film épitaxial multicouche destiné à être utilisé dans la fabrication du transistor à effet de champ
EP2259295A4 (fr) * 2008-03-24 2013-11-27 Ngk Insulators Ltd Substrat épitaxial pour élément semiconducteur, élément semiconducteur, et procédé de production de substrat épitaxial pour élément semiconducteur
US20100117118A1 (en) * 2008-08-07 2010-05-13 Dabiran Amir M High electron mobility heterojunction device
US20100072484A1 (en) * 2008-09-23 2010-03-25 Triquint Semiconductor, Inc. Heteroepitaxial gallium nitride-based device formed on an off-cut substrate
US8344420B1 (en) * 2009-07-24 2013-01-01 Triquint Semiconductor, Inc. Enhancement-mode gallium nitride high electron mobility transistor
JP5308290B2 (ja) * 2009-09-15 2013-10-09 日本碍子株式会社 半導体素子用エピタキシャル基板、ショットキー接合構造、およびショットキー接合構造の漏れ電流抑制方法
JP5506919B2 (ja) * 2010-04-22 2014-05-28 三菱電機株式会社 半導体装置およびその製造方法
JP5712583B2 (ja) * 2010-12-02 2015-05-07 富士通株式会社 化合物半導体装置及びその製造方法
JP5712721B2 (ja) * 2011-03-24 2015-05-07 株式会社デンソー 半導体装置
JP2012227227A (ja) * 2011-04-15 2012-11-15 Advanced Power Device Research Association 半導体デバイス
WO2013095343A1 (fr) 2011-12-19 2013-06-27 Intel Corporation Transistors à nanofils du groupe iii-n
US8896101B2 (en) 2012-12-21 2014-11-25 Intel Corporation Nonplanar III-N transistors with compositionally graded semiconductor channels
US10636881B2 (en) * 2016-04-11 2020-04-28 Qorvo Us, Inc. High electron mobility transistor (HEMT) device
US10734512B2 (en) 2016-04-11 2020-08-04 Qorvo Us, Inc. High electron mobility transistor (HEMT) device
TWI648858B (zh) 2016-06-14 2019-01-21 黃知澍 Ga-face III族/氮化物磊晶結構及其主動元件與其製作方法
JP7039705B2 (ja) 2017-12-05 2022-03-22 キング・アブドゥッラー・ユニバーシティ・オブ・サイエンス・アンド・テクノロジー Ｉｉｉ族窒化物合金の形成
CN111477536A (zh) * 2020-03-31 2020-07-31 华为技术有限公司 一种半导体外延结构及半导体器件
JP7556401B2 (ja) 2020-11-18 2024-09-26 日本電信電話株式会社 トランジスタの製造方法
CN112951910A (zh) * 2021-04-13 2021-06-11 西安电子科技大学 BAlN/GaN高电子迁移率晶体管及其制作方法
KR102615809B1 (ko) * 2022-07-22 2023-12-20 웨이브로드 주식회사 전력반도체 소자용 그룹3족 질화물 반도체 템플릿

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Publication number Priority date Publication date Assignee Title
JPS61198784A (ja) * 1985-02-28 1986-09-03 Fujitsu Ltd 電界効果型半導体装置
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3094500B2 (ja) * 1991-05-21 2000-10-03 日本電気株式会社 電界効果トランジスタ
JP3286921B2 (ja) * 1992-10-09 2002-05-27 富士通株式会社 シリコン基板化合物半導体装置
JP3445653B2 (ja) * 1994-03-23 2003-09-08 士郎 酒井 発光素子
JP3458349B2 (ja) * 1996-11-19 2003-10-20 株式会社デンソー 半導体装置
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
JP4347919B2 (ja) * 1997-10-03 2009-10-21 Ｏｋｉセミコンダクタ株式会社 半導体装置
US6605151B1 (en) * 1999-11-29 2003-08-12 Northwestern University Oxide thin films and composites and related methods of deposition
JP3751791B2 (ja) * 2000-03-28 2006-03-01 日本電気株式会社 ヘテロ接合電界効果トランジスタ
US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
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FR2875338B1 (fr) * 2004-09-13 2007-01-05 Picogiga Internat Soc Par Acti Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul
FR2875337A1 (fr) * 2004-09-13 2006-03-17 Picogiga Internat Soc Par Acti Structures hemt piezoelectriques a desordre d'alliage nul

Also Published As

Publication number Publication date
KR20070041751A (ko) 2007-04-19
US20070164299A1 (en) 2007-07-19
JP2008512863A (ja) 2008-04-24
EP1800346B1 (fr) 2012-01-25
EP1800346A1 (fr) 2007-06-27
KR100930639B1 (ko) 2009-12-09
FR2875338A1 (fr) 2006-03-17
TW200633214A (en) 2006-09-16
ATE543218T1 (de) 2012-02-15
TWI309088B (en) 2009-04-21
WO2006030014A1 (fr) 2006-03-23

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