[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR2676863B1 - Procede de fabrication d'un condensateur de cellule dram et structure de celui-ci. - Google Patents

Procede de fabrication d'un condensateur de cellule dram et structure de celui-ci.

Info

Publication number
FR2676863B1
FR2676863B1 FR9109791A FR9109791A FR2676863B1 FR 2676863 B1 FR2676863 B1 FR 2676863B1 FR 9109791 A FR9109791 A FR 9109791A FR 9109791 A FR9109791 A FR 9109791A FR 2676863 B1 FR2676863 B1 FR 2676863B1
Authority
FR
France
Prior art keywords
manufacturing
dram cell
cell capacitor
capacitor
dram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9109791A
Other languages
English (en)
Other versions
FR2676863A1 (fr
Inventor
Oh-Hyun Kwon
Joong-Hyun Shin
Taek-Yong Jang
Kyoung-Seok Oh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2676863A1 publication Critical patent/FR2676863A1/fr
Application granted granted Critical
Publication of FR2676863B1 publication Critical patent/FR2676863B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9109791A 1991-05-23 1991-08-01 Procede de fabrication d'un condensateur de cellule dram et structure de celui-ci. Expired - Fee Related FR2676863B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008366A KR940006587B1 (ko) 1991-05-23 1991-05-23 디램셀의 캐패시터 제조방법

Publications (2)

Publication Number Publication Date
FR2676863A1 FR2676863A1 (fr) 1992-11-27
FR2676863B1 true FR2676863B1 (fr) 1998-09-04

Family

ID=19314810

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9109791A Expired - Fee Related FR2676863B1 (fr) 1991-05-23 1991-08-01 Procede de fabrication d'un condensateur de cellule dram et structure de celui-ci.

Country Status (7)

Country Link
US (1) US5364809A (fr)
JP (1) JP2501501B2 (fr)
KR (1) KR940006587B1 (fr)
DE (1) DE4126046C2 (fr)
FR (1) FR2676863B1 (fr)
GB (1) GB2256089B (fr)
IT (1) IT1251855B (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE39665E1 (en) 1992-03-13 2007-05-29 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
KR950021710A (ko) * 1993-12-01 1995-07-26 김주용 반도체 장치의 캐패시터 제조방법
US5536671A (en) * 1993-12-28 1996-07-16 Hyundai Electronics Industries, Co., Ltd. Method for fabricating capacitor of a semiconductor device
KR960006030A (ko) * 1994-07-18 1996-02-23 김주용 반도체소자의 캐패시터 제조방법
US5550077A (en) * 1995-05-05 1996-08-27 Vanguard International Semiconductor Corporation DRAM cell with a comb-type capacitor
US7294578B1 (en) * 1995-06-02 2007-11-13 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US6716769B1 (en) 1995-06-02 2004-04-06 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US5950092A (en) * 1995-06-02 1999-09-07 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US5627094A (en) * 1995-12-04 1997-05-06 Chartered Semiconductor Manufacturing Pte, Ltd. Stacked container capacitor using chemical mechanical polishing
US5607874A (en) * 1996-02-02 1997-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a DRAM cell with a T shaped storage capacitor
US5702989A (en) * 1996-02-08 1997-12-30 Taiwan Semiconductor Manufacturing Company Ltd. Method for fabricating a tub structured stacked capacitor for a DRAM cell having a central column
US5856220A (en) * 1996-02-08 1999-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a double wall tub shaped capacitor
US5940713A (en) * 1996-03-01 1999-08-17 Micron Technology, Inc. Method for constructing multiple container capacitor
US5604146A (en) * 1996-06-10 1997-02-18 Vanguard International Semiconductor Corporation Method to fabricate a semiconductor memory device having an E-shaped storage node
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
US5998256A (en) 1996-11-01 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry
US5726086A (en) * 1996-11-18 1998-03-10 Mosel Vitelic Inc. Method of making self-aligned cylindrical capacitor structure of stack DRAMS
US6534409B1 (en) 1996-12-04 2003-03-18 Micron Technology, Inc. Silicon oxide co-deposition/etching process
US5972769A (en) * 1996-12-20 1999-10-26 Texas Instruments Incoporated Self-aligned multiple crown storage capacitor and method of formation
US6146961A (en) * 1997-06-23 2000-11-14 Micron Technology, Inc. Processing methods of forming a capacitor
US6590250B2 (en) 1997-11-25 2003-07-08 Micron Technology, Inc. DRAM capacitor array and integrated device array of substantially identically shaped devices
US6037213A (en) * 1998-06-03 2000-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making cylinder-shaped capacitors for dynamic random access memory
KR100533376B1 (ko) * 1998-12-30 2006-04-21 주식회사 하이닉스반도체 반도체 장치의 크라운형 커패시터 제조 방법
TW448565B (en) * 1999-06-03 2001-08-01 Taiwan Semiconductor Mfg Structure and manufacture method for window-frame type capacitor
US6297121B1 (en) * 2000-08-16 2001-10-02 Vanguard International Semiconductor Corporation Fabrication method for capacitors in integrated circuits with a self-aligned contact structure
KR100599051B1 (ko) 2004-01-12 2006-07-12 삼성전자주식회사 향상된 캐패시턴스를 갖는 캐패시터 및 그 제조 방법
FR2885452A1 (fr) * 2005-05-04 2006-11-10 St Microelectronics Sa Circuit integre comprenant au moins un condensateur et procede de formation de condensateur
US9997548B1 (en) * 2017-05-11 2018-06-12 Himax Technologies Limited Method of fabricating semiconductor display apparatus

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62286270A (ja) * 1986-06-05 1987-12-12 Sony Corp 半導体メモリ装置
JPS6474752A (en) * 1987-09-17 1989-03-20 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JP2744457B2 (ja) * 1989-02-28 1998-04-28 株式会社日立製作所 半導体装置およびその製造方法
JP2645069B2 (ja) * 1988-04-07 1997-08-25 富士通株式会社 半導体集積回路装置
JP2723530B2 (ja) * 1988-04-13 1998-03-09 日本電気株式会社 ダイナミック型ランダムアクセスメモリ装置の製造方法
US5075428A (en) * 1988-07-30 1991-12-24 Bayer Aktiengesellschaft 2,4-diamino-6-fluorotriazine disazo reactive dyestuffs
JPH0276257A (ja) * 1988-09-12 1990-03-15 Sharp Corp 半導体メモリ素子
JPH0290563A (ja) * 1988-09-28 1990-03-30 Hitachi Ltd 電荷蓄積キヤパシタ
JP2724209B2 (ja) * 1989-06-20 1998-03-09 シャープ株式会社 半導体メモリ素子の製造方法
US5047826A (en) * 1989-06-30 1991-09-10 Texas Instruments Incorporated Gigaohm load resistor for BICMOS process
JP2514435B2 (ja) * 1989-08-02 1996-07-10 三菱電機株式会社 半導体記憶装置およびその製造方法
JPH0364964A (ja) * 1989-08-03 1991-03-20 Toshiba Corp 半導体記憶装置の製造方法
JPH0391957A (ja) * 1989-09-04 1991-04-17 Sony Corp メモリ装置の製造方法
JPH03127859A (ja) * 1989-10-13 1991-05-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH07114260B2 (ja) * 1989-11-23 1995-12-06 財団法人韓国電子通信研究所 コップ状のポリシリコン貯蔵電極を有するスタック構造のｄｒａｍセル，およびその製造方法
DD299990A5 (de) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
US5030585A (en) * 1990-03-22 1991-07-09 Micron Technology, Inc. Split-polysilicon CMOS DRAM process incorporating selective self-aligned silicidation of conductive regions and nitride blanket protection of N-channel regions during P-channel gate spacer formation
JPH0437062A (ja) * 1990-05-31 1992-02-07 Sony Corp スタックトキャパシタ型ｄｒａｍの製造方法
US5126280A (en) * 1991-02-08 1992-06-30 Micron Technology, Inc. Stacked multi-poly spacers with double cell plate capacitor
JPH04264767A (ja) * 1991-02-20 1992-09-21 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR940006587B1 (ko) 1994-07-22
GB2256089A (en) 1992-11-25
GB2256089B (en) 1995-06-07
KR920022525A (ko) 1992-12-19
US5364809A (en) 1994-11-15
JP2501501B2 (ja) 1996-05-29
ITMI912535A1 (it) 1993-03-24
DE4126046A1 (de) 1992-11-26
ITMI912535A0 (it) 1991-09-24
GB9120753D0 (en) 1991-11-13
DE4126046C2 (de) 1994-02-24
FR2676863A1 (fr) 1992-11-27
IT1251855B (it) 1995-05-26
JPH04350965A (ja) 1992-12-04

Similar Documents

Publication Publication Date Title
FR2676863B1 (fr) Procede de fabrication d'un condensateur de cellule dram et structure de celui-ci.
GB9018965D0 (en) A stacked capacitor for a dram cell and a method for manufacturing the same
FR2664098B1 (fr) Condensateur empile d'une cellule dram et son procede de fabrication.
FR2777690B1 (fr) Structure et procede de fabrication d'un condensateur
FR2662851B1 (fr) Procede de fabrication d'un condensateur du type a empilage pour dispositif de memoire.
FR2680913B1 (fr) Dispositif de memoire a semiconducteur ayant un condensateur et procede pour sa fabrication.
FR2741196B1 (fr) Module de conversion thermoelectrique et procede de fabrication d'un tel module
FR2571663B1 (fr) Document d'identite difficilement falsifiable et procede de fabrication d'un tel document
FR2682811B1 (fr) Dispositif a semiconducteurs de type empile et procede de fabrication.
FR2618011B1 (fr) Procede de fabrication d'une cellule de memoire
FR2634158B1 (fr) Procede de fabrication d'un element de rembourrage
FR2676864B1 (fr) Procede de fabrication de transistor mos a recouvrement grille-drain et structure correspondante.
FR2632453B1 (fr) Cellule de memoire dram a condensateur a empilage et procede pour fabriquer une telle cellule
FR2677481B1 (fr) Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue.
FR2667157B1 (fr) Micro-accelerometre a resonateurs et procede de fabrication.
FR2663149B1 (fr) Condensateur feuillete et procede de fabrication d'un tel condensateur.
FR2680598B1 (fr) Procede de fabrication d'un fil supraconducteur.
FR2776834B1 (fr) Procede de fabrication d'un condensateur de cellule de memoire vive dynamique
FR2648153B1 (fr) Procede de fabrication d'elements de palier a roulement
FR2682486B1 (fr) Miroir dielectrique interferentiel et procede de fabrication d'un tel miroir.
FR2554966B1 (fr) Condensateur de decouplage et procede de fabrication de celui-ci
FR2668653B1 (fr) Procede de fabrication d'un element accumulateur electrochimique et d'un precurseur de celui-ci et precurseur ainsi obtenu.
EP0517255A3 (en) Semiconductor memory device having a memory cell capacitor and a fabrication process thereof
FR2654870B1 (fr) Dispositif semi-conducteur, notamment dispositif de memoire a condensateur, et procede pour sa fabrication.
FR2778269B1 (fr) Procede de fabrication d'un condensateur de cellule de memoire dynamique

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100430