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FR2641641B1 - Dispositif de memoire non volatile a semiconducteurs comportant un circuit de generation de bit errone - Google Patents

Dispositif de memoire non volatile a semiconducteurs comportant un circuit de generation de bit errone

Info

Publication number
FR2641641B1
FR2641641B1 FR8905039A FR8905039A FR2641641B1 FR 2641641 B1 FR2641641 B1 FR 2641641B1 FR 8905039 A FR8905039 A FR 8905039A FR 8905039 A FR8905039 A FR 8905039A FR 2641641 B1 FR2641641 B1 FR 2641641B1
Authority
FR
France
Prior art keywords
errone
memory device
semiconductor memory
generation circuit
volatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8905039A
Other languages
English (en)
Other versions
FR2641641A1 (fr
Inventor
Kim Jin-Ki
Yim Hyung-Kyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2641641A1 publication Critical patent/FR2641641A1/fr
Application granted granted Critical
Publication of FR2641641B1 publication Critical patent/FR2641641B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
    • G06F11/2205—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested
    • G06F11/2215—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested to test error correction or detection circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

L'invention concerne les mémoires à semiconducteurs. Un circuit de génération de bit erroné comprend notamment un générateur de parité 16, des moyens 24 pour écrire des données d'entrée et les données de parité dans un réseau de cellules de mémoire 28, des moyens 20 pour corriger un bit erroné parmi les données d'entrée, et des moyens de génération de bit erroné 14 qui produisent un signal de bit erroné pour un bit sélectionné des données d'entrée, sous la dépendance d'un signal de commande et d'un signal d'adresse. Application au test des mémoires EEPROM.
FR8905039A 1988-12-15 1989-04-17 Dispositif de memoire non volatile a semiconducteurs comportant un circuit de generation de bit errone Expired - Lifetime FR2641641B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR880016715 1988-12-15

Publications (2)

Publication Number Publication Date
FR2641641A1 FR2641641A1 (fr) 1990-07-13
FR2641641B1 true FR2641641B1 (fr) 1994-09-23

Family

ID=19280189

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8905039A Expired - Lifetime FR2641641B1 (fr) 1988-12-15 1989-04-17 Dispositif de memoire non volatile a semiconducteurs comportant un circuit de generation de bit errone

Country Status (5)

Country Link
US (1) US5142541A (fr)
JP (1) JPH02166700A (fr)
DE (1) DE3906494A1 (fr)
FR (1) FR2641641B1 (fr)
GB (1) GB2226168B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2830308B2 (ja) * 1990-02-26 1998-12-02 日本電気株式会社 情報処理装置
DE69019822T2 (de) * 1990-06-27 1995-12-14 Ibm Verfahren und Vorrichtung zur Prüfung des Inhalts und der Adresse einer Speicheranordnung.
USRE36448E (en) * 1991-09-13 1999-12-14 International Business Machines Corporation Memory controller with parity generator for an I/O control unit
KR950003013B1 (ko) * 1992-03-30 1995-03-29 삼성전자 주식회사 틀림정정회로를 가지는 이이피롬
JPH0714393A (ja) * 1993-06-16 1995-01-17 Sharp Corp Ｐｒｏｍ内蔵マイクロコンピュータ
US6397357B1 (en) * 1996-10-08 2002-05-28 Dell Usa, L.P. Method of testing detection and correction capabilities of ECC memory controller
US6085290A (en) * 1998-03-10 2000-07-04 Nexabit Networks, Llc Method of and apparatus for validating data read out of a multi port internally cached dynamic random access memory (AMPIC DRAM)
DE19935497A1 (de) * 1999-07-28 2001-03-01 Infineon Technologies Ag Verfahren und Schaltungsanordnung zum Korrigieren von Speicherfehlern
US6539503B1 (en) 1999-11-23 2003-03-25 Hewlett-Packard Company Method and apparatus for testing error detection
JP2001351398A (ja) * 2000-06-12 2001-12-21 Nec Corp 記憶装置
FR2877563B1 (fr) 2004-11-08 2007-11-30 Centre Nat Rech Scient Cnrse Prothese acetabulaire destinee a etre fixee sans ciment
KR100694407B1 (ko) 2005-04-21 2007-03-12 주식회사 하이닉스반도체 불량 셀 교정 회로를 포함하는 불휘발성 강유전체 메모리장치
JP2007102977A (ja) 2005-10-07 2007-04-19 Toshiba Corp 半導体記憶装置
US7567461B2 (en) * 2006-08-18 2009-07-28 Micron Technology, Inc. Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
JP4820795B2 (ja) * 2007-10-04 2011-11-24 パナソニック株式会社 半導体記憶装置
US8627163B2 (en) * 2008-03-25 2014-01-07 Micron Technology, Inc. Error-correction forced mode with M-sequence
DE102008026568A1 (de) * 2008-06-03 2010-04-08 Qimonda Ag Halbleiterbauelement, Speichermodul und Verfahren zum Testen einer Fehlerkorrektur-Funktionalität beim Zugriff auf ein Speicherbauelement
US8161355B2 (en) 2009-02-11 2012-04-17 Mosys, Inc. Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process
KR20110100739A (ko) * 2010-03-05 2011-09-15 삼성전자주식회사 불휘발성 메모리 장치의 동작 방법, 컨트롤러의 동작 방법, 그리고 불휘발성 메모리 장치 및 컨트롤러를 포함하는 메모리 시스템의 동작 방법
US8612834B2 (en) * 2011-03-08 2013-12-17 Intel Corporation Apparatus, system, and method for decoding linear block codes in a memory controller
JP5490062B2 (ja) * 2011-07-19 2014-05-14 株式会社東芝 不揮発性半導体記憶装置
DE102015210651B4 (de) * 2015-06-10 2022-10-27 Infineon Technologies Ag Schaltung und Verfahren zum Testen einer Fehlerkorrektur-Fähigkeit
US10452505B2 (en) * 2017-12-20 2019-10-22 Advanced Micro Devices, Inc. Error injection for assessment of error detection and correction techniques using error injection logic and non-volatile memory
KR102468721B1 (ko) * 2017-12-20 2022-11-21 에스케이하이닉스 주식회사 메모리 시스템 및 그의 동작 방법
JP7382151B2 (ja) * 2019-03-28 2023-11-16 ラピスセミコンダクタ株式会社 半導体装置及びそのテスト方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3568153A (en) * 1968-09-16 1971-03-02 Ibm Memory with error correction
US3868632A (en) * 1972-11-15 1975-02-25 Ibm Plural channel error correcting apparatus and methods
US4058851A (en) * 1976-10-18 1977-11-15 Sperry Rand Corporation Conditional bypass of error correction for dual memory access time selection
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
US4561095A (en) * 1982-07-19 1985-12-24 Fairchild Camera & Instrument Corporation High-speed error correcting random access memory system
JPS6011953A (ja) * 1983-07-01 1985-01-22 Mitsubishi Electric Corp メモリ装置
JPS60133599A (ja) * 1983-12-21 1985-07-16 Nec Corp 半導体メモリ装置
JPS61145799A (ja) * 1984-12-20 1986-07-03 Fujitsu Ltd メモリを内蔵した半導体集積回路
US4744062A (en) * 1985-04-23 1988-05-10 Hitachi, Ltd. Semiconductor integrated circuit with nonvolatile memory
JPS6246357A (ja) * 1985-08-23 1987-02-28 Hitachi Vlsi Eng Corp 半導体記憶装置
SE453228B (sv) * 1986-04-18 1988-01-18 Ericsson Telefon Ab L M Sett och anordning for att overvaka ett feltolerant datorminne
JPS63129600A (ja) * 1986-11-19 1988-06-01 Nec Corp 誤り検出・訂正回路付半導体記憶装置

Also Published As

Publication number Publication date
JPH02166700A (ja) 1990-06-27
FR2641641A1 (fr) 1990-07-13
GB8924723D0 (en) 1989-12-20
DE3906494A1 (de) 1990-06-21
US5142541A (en) 1992-08-25
GB2226168B (en) 1993-05-26
GB2226168A (en) 1990-06-20
DE3906494C2 (fr) 1990-12-06

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