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FR2592989A1 - Procede de fabrication d'un dispositif a semi-conducteur du type a renvoi reparti - Google Patents

Procede de fabrication d'un dispositif a semi-conducteur du type a renvoi reparti

Info

Publication number
FR2592989A1
FR2592989A1 FR8700342A FR8700342A FR2592989A1 FR 2592989 A1 FR2592989 A1 FR 2592989A1 FR 8700342 A FR8700342 A FR 8700342A FR 8700342 A FR8700342 A FR 8700342A FR 2592989 A1 FR2592989 A1 FR 2592989A1
Authority
FR
France
Prior art keywords
layer
guide
manufacturing
semiconductor device
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR8700342A
Other languages
English (en)
Inventor
Shoji Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2592989A1 publication Critical patent/FR2592989A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un laser à semi-conducteur du type à renvoi réparti comprenant, l'une au-dessus de l'autre, une première couche de revêtement 2, une couche active 3, une couche de guidage 4 et une deuxième couche de revêtement 7, où un réseau 8 est disposé sur la couche de guidage, le procédé consistant à former une couche 5a d'un matériau prédéterminé sur la couche de guidage, à inciser sélectivement ladite couche de matériau et la couche de guidage jusqu'à faire apparaître au moins partiellement la couche de guidage de manière à former une ondulation 6 de forme d'onde triangulaire à la surface de la couche de matériau et de la couche de guidage, et à former la deuxième couche de revêtement 7 de manière à recouvrir ladite inégalité. (CF DESSIN DANS BOPI)
FR8700342A 1986-01-14 1987-01-14 Procede de fabrication d'un dispositif a semi-conducteur du type a renvoi reparti Pending FR2592989A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61005725A JPS62163385A (ja) 1986-01-14 1986-01-14 分布帰還型半導体レ−ザの製造方法

Publications (1)

Publication Number Publication Date
FR2592989A1 true FR2592989A1 (fr) 1987-07-17

Family

ID=11619097

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8700342A Pending FR2592989A1 (fr) 1986-01-14 1987-01-14 Procede de fabrication d'un dispositif a semi-conducteur du type a renvoi reparti

Country Status (6)

Country Link
US (1) US4716132A (fr)
JP (1) JPS62163385A (fr)
CA (1) CA1285057C (fr)
DE (1) DE3700909A1 (fr)
FR (1) FR2592989A1 (fr)
GB (1) GB2185353B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH073909B2 (ja) * 1987-09-08 1995-01-18 三菱電機株式会社 半導体レーザの製造方法
DE3809609A1 (de) * 1988-03-22 1989-10-05 Siemens Ag Laserdiode zur erzeugung streng monochromatischer laserstrahlung
DE3817326A1 (de) * 1988-05-20 1989-11-30 Siemens Ag Verfahren zur herstellung von gitterstrukturen mit um eine halbe gitterperiode gegeneinander versetzten abschnitten
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
DE3923354A1 (de) * 1989-07-14 1991-01-24 Licentia Gmbh Halbleiterlaser
US5023198A (en) * 1990-02-28 1991-06-11 At&T Bell Laboratories Method for fabricating self-stabilized semiconductor gratings
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
DE69220303T2 (de) * 1991-07-24 1998-01-02 Sharp Kk Verfahren zur Herstellung eines Halbleiterlasers mit verteilter Rückkoppelung
US5346855A (en) * 1993-01-19 1994-09-13 At&T Bell Laboratories Method of making an INP-based DFB laser
US6194240B1 (en) * 1993-12-21 2001-02-27 Lucent Technologies Inc. Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers
US6285698B1 (en) 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
EP1339142A1 (fr) * 2002-02-25 2003-08-27 Agilent Technologies, Inc. - a Delaware corporation - Moyens de suppressions de modes non-Bragg
DE102008054217A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178604A (en) * 1973-10-05 1979-12-11 Hitachi, Ltd. Semiconductor laser device
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
JPS5946083A (ja) * 1982-09-09 1984-03-15 Nippon Telegr & Teleph Corp <Ntt> 周期構造を有する半導体レ−ザの製法
DE3483164D1 (de) * 1983-01-19 1990-10-18 British Telecomm Zuechtung von halbleiter.
JPS607720A (ja) * 1983-06-28 1985-01-16 Nec Corp エピタキシヤル成長方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS *
PATENT ABSTRACTS OF JAPAN *

Also Published As

Publication number Publication date
JPS62163385A (ja) 1987-07-20
GB2185353B (en) 1989-01-05
US4716132A (en) 1987-12-29
GB8700702D0 (en) 1987-02-18
GB2185353A (en) 1987-07-15
DE3700909A1 (de) 1987-07-16
CA1285057C (fr) 1991-06-18

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