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FI980567A0 - Radiofrekvensfoerstaerkare - Google Patents

Radiofrekvensfoerstaerkare

Info

Publication number
FI980567A0
FI980567A0 FI980567A FI980567A FI980567A0 FI 980567 A0 FI980567 A0 FI 980567A0 FI 980567 A FI980567 A FI 980567A FI 980567 A FI980567 A FI 980567A FI 980567 A0 FI980567 A0 FI 980567A0
Authority
FI
Finland
Prior art keywords
radiofrekvensfoerstaerkare
Prior art date
Application number
FI980567A
Other languages
English (en)
Other versions
FI105611B (fi
FI980567A (fi
Inventor
Esko Jaervinen
Original Assignee
Nokia Mobile Phones Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Mobile Phones Ltd filed Critical Nokia Mobile Phones Ltd
Priority to FI980567A priority Critical patent/FI105611B/fi
Publication of FI980567A0 publication Critical patent/FI980567A0/fi
Priority to DE69942880T priority patent/DE69942880D1/de
Priority to EP06015328A priority patent/EP1744448B1/en
Priority to EP99660036A priority patent/EP0942524B1/en
Priority to DE69933160T priority patent/DE69933160T2/de
Priority to US09/265,273 priority patent/US6052032A/en
Priority to JP11066221A priority patent/JPH11330866A/ja
Publication of FI980567A publication Critical patent/FI980567A/fi
Application granted granted Critical
Publication of FI105611B publication Critical patent/FI105611B/fi

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/366—Multiple MOSFETs are coupled in parallel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21131—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the input bias voltage of a power amplifier being controlled, e.g. by a potentiometer or an emitter follower

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
FI980567A 1998-03-13 1998-03-13 Radiotajuusvahvistimet FI105611B (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI980567A FI105611B (fi) 1998-03-13 1998-03-13 Radiotajuusvahvistimet
DE69942880T DE69942880D1 (de) 1998-03-13 1999-02-25 Hochfrequenzverstärker
EP06015328A EP1744448B1 (en) 1998-03-13 1999-02-25 Radio frequency amplifiers
EP99660036A EP0942524B1 (en) 1998-03-13 1999-02-25 Radio frequency amplifiers
DE69933160T DE69933160T2 (de) 1998-03-13 1999-02-25 Hochfrequenzverstärker
US09/265,273 US6052032A (en) 1998-03-13 1999-03-09 Radio frequency amplifiers
JP11066221A JPH11330866A (ja) 1998-03-13 1999-03-12 無線周波数増幅器及び動作点安定化方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI980567 1998-03-13
FI980567A FI105611B (fi) 1998-03-13 1998-03-13 Radiotajuusvahvistimet

Publications (3)

Publication Number Publication Date
FI980567A0 true FI980567A0 (fi) 1998-03-13
FI980567A FI980567A (fi) 1999-09-14
FI105611B FI105611B (fi) 2000-09-15

Family

ID=8551254

Family Applications (1)

Application Number Title Priority Date Filing Date
FI980567A FI105611B (fi) 1998-03-13 1998-03-13 Radiotajuusvahvistimet

Country Status (5)

Country Link
US (1) US6052032A (fi)
EP (2) EP1744448B1 (fi)
JP (1) JPH11330866A (fi)
DE (2) DE69942880D1 (fi)
FI (1) FI105611B (fi)

Families Citing this family (55)

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DE19945709C2 (de) * 1999-09-23 2002-06-20 Infineon Technologies Ag Schaltungsanordnung zur Regelung des Arbeitspunkts eines Leistungsverstärkers und deren Verwendung
US6429746B1 (en) * 1999-12-07 2002-08-06 Nokia Networks Oy System and method for auto-bias of an amplifier
US6313705B1 (en) 1999-12-20 2001-11-06 Rf Micro Devices, Inc. Bias network for high efficiency RF linear power amplifier
JP3660846B2 (ja) * 2000-02-23 2005-06-15 日本無線株式会社 Ｆｅｔバイアス回路
JP3641184B2 (ja) * 2000-03-28 2005-04-20 株式会社東芝 バイポーラトランジスタを用いた高周波電力増幅器
JP2001320243A (ja) * 2000-05-12 2001-11-16 Sony Corp バイアス回路およびこれを用いた無線通信装置
US6259324B1 (en) * 2000-06-23 2001-07-10 International Business Machines Corporation Active bias network circuit for radio frequency amplifier
US6351189B1 (en) 2000-07-31 2002-02-26 Nokia Networks Oy System and method for auto-bias of an amplifier
JP3904817B2 (ja) * 2000-08-31 2007-04-11 株式会社ルネサステクノロジ 電力増幅器モジュール
JP3631426B2 (ja) * 2000-09-25 2005-03-23 株式会社東芝 高出力増幅器
US6639470B1 (en) * 2000-10-06 2003-10-28 Skyworks Solutions, Inc. Constant current biasing circuit for linear power amplifiers
US6333677B1 (en) 2000-10-10 2001-12-25 Rf Micro Devices, Inc. Linear power amplifier bias circuit
US6452454B1 (en) * 2000-11-13 2002-09-17 Conexant Systems, Inc. Temperature compensation module
US6424225B1 (en) * 2000-11-27 2002-07-23 Conexant Systems, Inc. Power amplifier circuit for providing constant bias current over a wide temperature range
GB0103082D0 (en) 2001-02-08 2001-03-28 Pace Micro Tech Plc Self compensating amplifier and driver
JP2002280842A (ja) * 2001-03-21 2002-09-27 Hitachi Ltd 電力増幅器モジュール
DE10120524B4 (de) 2001-04-26 2015-08-20 Infineon Technologies Ag Vorrichtung zur Ermittlung des Stromes durch ein Leistungs-Halbleiterbauelement
DE10121168A1 (de) * 2001-04-30 2002-11-21 Infineon Technologies Ag Vorrichtung zum Steuern eines Ruhestroms für einen Verstärkertransistor und Verstärkerschaltung
DE10121167A1 (de) * 2001-04-30 2002-11-28 Infineon Technologies Ag Vorrichtung zum Steuern eines Ruhestroms für einen Verstärkertransistor und Verstärkerschaltung
EP1265354A1 (en) * 2001-05-25 2002-12-11 Nokia Corporation Amplifier circuit
US6842075B2 (en) * 2001-06-06 2005-01-11 Anadigics, Inc. Gain block with stable internal bias from low-voltage power supply
US6753734B2 (en) 2001-06-06 2004-06-22 Anadigics, Inc. Multi-mode amplifier bias circuit
US6515546B2 (en) 2001-06-06 2003-02-04 Anadigics, Inc. Bias circuit for use with low-voltage power supply
US6624700B2 (en) * 2001-06-29 2003-09-23 Koninklijke Philips Electronics N.V. Radio frequency power amplifier for cellular telephones
US6492874B1 (en) 2001-07-30 2002-12-10 Motorola, Inc. Active bias circuit
DE10212165A1 (de) * 2002-03-19 2003-10-09 Infineon Technologies Ag Transistoranordnung
AU2003216835A1 (en) 2002-03-20 2003-10-08 Roke Manor Research Limited A bias circuit for a bipolar transistor
GB2386775B (en) * 2002-03-20 2004-09-29 Roke Manor Research A bias circuit for a bipolar transistor
US6653902B1 (en) * 2002-09-03 2003-11-25 Triquint Semiconductor, Inc. Amplifier power control circuit
US7151814B1 (en) * 2002-11-07 2006-12-19 Applied Micro Circuits Corporation Hogge phase detector with adjustable phase output
JP3829121B2 (ja) * 2003-01-31 2006-10-04 株式会社東芝 電力増幅回路
JP4088177B2 (ja) * 2003-03-12 2008-05-21 株式会社東芝 バイアス電流供給回路及び増幅回路
US7057461B1 (en) * 2003-03-19 2006-06-06 Dynalinear Technologies, Inc. Heterostructure bipolar transistor power amplifier module with dynamic voltage supply for improved efficiency
US7049893B2 (en) * 2003-04-14 2006-05-23 M/A-Com, Inc. Apparatus, methods and articles of manufacture for power amplifier control in a communication system
US6819183B1 (en) * 2003-05-23 2004-11-16 Qualcomm, Incorporated Temperature and process compensation of MOSFET operating in sub-threshold mode
EP1517437A1 (de) * 2003-09-19 2005-03-23 Siemens Aktiengesellschaft HF-Leistungsverstärker mit Betriebsstrommesseinrichtung
US20050140439A1 (en) * 2003-12-26 2005-06-30 Hyoung Chang H. Predistortion linearizer for power amplifier
JP2005223437A (ja) * 2004-02-03 2005-08-18 Nec Compound Semiconductor Devices Ltd バイアス回路
EP1875601A1 (en) * 2005-04-18 2008-01-09 Freescale Semiconductor Inc. An adaptive protection circuit for a power amplifier
JP2007281930A (ja) * 2006-04-07 2007-10-25 Matsushita Electric Ind Co Ltd バイアス回路
JP4733560B2 (ja) * 2006-04-25 2011-07-27 シャープ株式会社 電力増幅器及び無線通信装置
EP1855379B1 (en) * 2006-05-12 2011-02-09 STMicroelectronics Srl Output power control of an RF amplifier
JP4802062B2 (ja) * 2006-08-08 2011-10-26 株式会社東芝 半導体増幅装置
US7696826B2 (en) * 2006-12-04 2010-04-13 Skyworks Solutions, Inc. Temperature compensation of collector-voltage control RF amplifiers
JP4887131B2 (ja) * 2006-12-18 2012-02-29 パナソニック株式会社 電力増幅器
US9312938B2 (en) * 2007-02-19 2016-04-12 Corning Optical Communications Wireless Ltd Method and system for improving uplink performance
US8576085B2 (en) * 2010-01-15 2013-11-05 Tektronix, Inc. Capacitance-type liquid level measuring probe
CN104904117B (zh) 2012-12-26 2018-02-23 株式会社村田制作所 高频放大电路
JP5821876B2 (ja) 2013-03-05 2015-11-24 株式会社村田製作所 電力増幅モジュール
JP5939404B2 (ja) 2013-03-19 2016-06-22 株式会社村田製作所 無線周波数増幅回路及び電力増幅モジュール
JP6187444B2 (ja) 2014-03-20 2017-08-30 株式会社村田製作所 電力増幅モジュール
JP2017028342A (ja) * 2015-07-15 2017-02-02 株式会社村田製作所 電力増幅モジュール
WO2022249955A1 (ja) * 2021-05-26 2022-12-01 株式会社村田製作所 送信回路
CN219536035U (zh) * 2023-02-27 2023-08-15 深圳飞骧科技股份有限公司 射频功率放大器电路和射频芯片

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Also Published As

Publication number Publication date
EP1744448A1 (en) 2007-01-17
EP1744448B1 (en) 2010-10-20
EP0942524B1 (en) 2006-09-13
DE69933160D1 (de) 2006-10-26
FI105611B (fi) 2000-09-15
DE69933160T2 (de) 2007-08-30
EP0942524A2 (en) 1999-09-15
DE69942880D1 (de) 2010-12-02
US6052032A (en) 2000-04-18
JPH11330866A (ja) 1999-11-30
EP0942524A3 (en) 2001-03-21
FI980567A (fi) 1999-09-14

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Legal Events

Date Code Title Description
MA Patent expired