EP1227172A3 - Méthode de réduction de dégats induits par un plasma pendant des processus de plasma - Google Patents
Méthode de réduction de dégats induits par un plasma pendant des processus de plasma Download PDFInfo
- Publication number
- EP1227172A3 EP1227172A3 EP01124618A EP01124618A EP1227172A3 EP 1227172 A3 EP1227172 A3 EP 1227172A3 EP 01124618 A EP01124618 A EP 01124618A EP 01124618 A EP01124618 A EP 01124618A EP 1227172 A3 EP1227172 A3 EP 1227172A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- plasma
- substrate
- charge damage
- reducing
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title abstract 8
- 239000007789 gas Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000010409 thin film Substances 0.000 abstract 3
- 239000002243 precursor Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US771203 | 2001-01-26 | ||
US09/771,203 US6660662B2 (en) | 2001-01-26 | 2001-01-26 | Method of reducing plasma charge damage for plasma processes |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1227172A2 EP1227172A2 (fr) | 2002-07-31 |
EP1227172A3 true EP1227172A3 (fr) | 2002-11-27 |
Family
ID=25091034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01124618A Withdrawn EP1227172A3 (fr) | 2001-01-26 | 2001-10-15 | Méthode de réduction de dégats induits par un plasma pendant des processus de plasma |
Country Status (5)
Country | Link |
---|---|
US (2) | US6660662B2 (fr) |
EP (1) | EP1227172A3 (fr) |
JP (1) | JP5004396B2 (fr) |
KR (1) | KR100870853B1 (fr) |
TW (1) | TW575893B (fr) |
Families Citing this family (380)
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US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
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US20010031321A1 (en) * | 2000-04-18 | 2001-10-18 | Shigeo Ishikawa | Film forming method in which flow rate is switched |
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WO2002008487A1 (fr) * | 2000-07-24 | 2002-01-31 | The University Of Maryland, College Park | Equipements de processus microelectroniques spatialement programmables a tetes d'injection segmentees a recirculation des gaz emis |
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2001
- 2001-01-26 US US09/771,203 patent/US6660662B2/en not_active Expired - Fee Related
- 2001-10-15 EP EP01124618A patent/EP1227172A3/fr not_active Withdrawn
- 2001-10-16 TW TW90125614A patent/TW575893B/zh not_active IP Right Cessation
-
2002
- 2002-01-26 KR KR1020020004603A patent/KR100870853B1/ko not_active IP Right Cessation
- 2002-01-28 JP JP2002019054A patent/JP5004396B2/ja not_active Expired - Fee Related
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2003
- 2003-09-08 US US10/658,350 patent/US7036453B2/en not_active Expired - Fee Related
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US5451435A (en) * | 1990-06-18 | 1995-09-19 | At&T Corp. | Method for forming dielectric |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
WO1999057747A1 (fr) * | 1998-05-01 | 1999-11-11 | Applied Materials, Inc. | Dispositif de dcpv et procede permettant le depot de films de titane |
WO2001003159A1 (fr) * | 1999-06-30 | 2001-01-11 | Lam Research Corporation | Dispositif de distribution de gaz pour le traitement de semi-conducteurs |
US20010031321A1 (en) * | 2000-04-18 | 2001-10-18 | Shigeo Ishikawa | Film forming method in which flow rate is switched |
Also Published As
Publication number | Publication date |
---|---|
KR100870853B1 (ko) | 2008-11-27 |
US20030024901A1 (en) | 2003-02-06 |
JP2002334871A (ja) | 2002-11-22 |
EP1227172A2 (fr) | 2002-07-31 |
JP5004396B2 (ja) | 2012-08-22 |
TW575893B (en) | 2004-02-11 |
US7036453B2 (en) | 2006-05-02 |
US20040048492A1 (en) | 2004-03-11 |
US6660662B2 (en) | 2003-12-09 |
KR20020063140A (ko) | 2002-08-01 |
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