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DK512488D0 - Mosfet med hoej effekt - Google Patents

Mosfet med hoej effekt

Info

Publication number
DK512488D0
DK512488D0 DK512488A DK512488A DK512488D0 DK 512488 D0 DK512488 D0 DK 512488D0 DK 512488 A DK512488 A DK 512488A DK 512488 A DK512488 A DK 512488A DK 512488 D0 DK512488 D0 DK 512488D0
Authority
DK
Denmark
Prior art keywords
mosphet
high power
power
Prior art date
Application number
DK512488A
Other languages
English (en)
Other versions
DK512488A (da
Inventor
Alexander Lidow
Thomas Herman
Vladimir Rumennik
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26715426&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DK512488(D0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of DK512488D0 publication Critical patent/DK512488D0/da
Publication of DK512488A publication Critical patent/DK512488A/da

Links

Classifications

    • H01L29/7811—
    • H01L29/0696—
    • H01L29/0878—
    • H01L29/1095—
    • H01L29/7802—
    • H01L29/7809—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H01L29/0847—
DK512488A 1978-10-13 1988-09-15 Mosfet med hoej effekt DK512488A (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95131078A 1978-10-13 1978-10-13
US3866279A 1979-05-14 1979-05-14

Publications (2)

Publication Number Publication Date
DK512488D0 true DK512488D0 (da) 1988-09-15
DK512488A DK512488A (da) 1988-09-15

Family

ID=26715426

Family Applications (3)

Application Number Title Priority Date Filing Date
DK350679A DK157272C (da) 1978-10-13 1979-08-22 Mosfet med hoej effekt
DK512388A DK512388D0 (da) 1978-10-13 1988-09-15 Mosfet med hoej effekt
DK512488A DK512488A (da) 1978-10-13 1988-09-15 Mosfet med hoej effekt

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DK350679A DK157272C (da) 1978-10-13 1979-08-22 Mosfet med hoej effekt
DK512388A DK512388D0 (da) 1978-10-13 1988-09-15 Mosfet med hoej effekt

Country Status (19)

Country Link
JP (2) JP2622378B2 (da)
AR (1) AR219006A1 (da)
BR (1) BR7906338A (da)
CA (2) CA1123119A (da)
CH (2) CH642485A5 (da)
CS (1) CS222676B2 (da)
DE (2) DE2954481C2 (da)
DK (3) DK157272C (da)
ES (1) ES484652A1 (da)
FR (1) FR2438917A1 (da)
GB (1) GB2033658B (da)
HU (1) HU182506B (da)
IL (1) IL58128A (da)
IT (1) IT1193238B (da)
MX (1) MX147137A (da)
NL (1) NL175358C (da)
PL (1) PL123961B1 (da)
SE (2) SE443682B (da)
SU (1) SU1621817A3 (da)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
DE3040775C2 (de) * 1980-10-29 1987-01-15 Siemens AG, 1000 Berlin und 8000 München Steuerbares MIS-Halbleiterbauelement
US4412242A (en) 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
DE3346286A1 (de) * 1982-12-21 1984-06-28 International Rectifier Corp., Los Angeles, Calif. Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil
JPS59167066A (ja) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd 縦形ｍｏｓｆｅｔ
JPS6010677A (ja) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
EP0586716B1 (de) * 1992-08-10 1997-10-22 Siemens Aktiengesellschaft Leistungs-MOSFET mit verbesserter Avalanche-Festigkeit
JPH06268227A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd 絶縁ゲート型バイポーラトランジスタ
DE69321965T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Leistungs-Chip-Typ und Packungszusammenbau
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
EP0660402B1 (en) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power semiconductor device
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
EP0689238B1 (en) * 1994-06-23 2002-02-20 STMicroelectronics S.r.l. MOS-technology power device manufacturing process
EP0697728B1 (en) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. MOS-technology power device chip and package assembly
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
DE69533134T2 (de) * 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
DE69534919T2 (de) 1995-10-30 2007-01-25 Stmicroelectronics S.R.L., Agrate Brianza Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
EP0782201B1 (en) * 1995-12-28 2000-08-30 STMicroelectronics S.r.l. MOS-technology power device integrated structure
DE69839439D1 (de) 1998-05-26 2008-06-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
EP1126527A4 (en) * 1999-04-09 2007-06-13 Shindengen Electric Mfg HIGH VOLTAGE SEMICONDUCTOR DEVICE
JP4122113B2 (ja) * 1999-06-24 2008-07-23 新電元工業株式会社 高破壊耐量電界効果型トランジスタ
US6344379B1 (en) * 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor
JP4845293B2 (ja) * 2000-08-30 2011-12-28 新電元工業株式会社 電界効果トランジスタ
JP2006295134A (ja) 2005-03-17 2006-10-26 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US10115815B2 (en) 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
US9530844B2 (en) 2012-12-28 2016-12-27 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
JP5907097B2 (ja) * 2013-03-18 2016-04-20 三菱電機株式会社 半導体装置
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
JPH05185381A (ja) * 1992-01-10 1993-07-27 Yuum Kogyo:Kk 替刃式鋸用ハンドル

Also Published As

Publication number Publication date
CH642485A5 (de) 1984-04-13
DK350679A (da) 1980-04-14
DE2940699C2 (de) 1986-04-03
JP2643095B2 (ja) 1997-08-20
DK512388A (da) 1988-09-15
SE8503615D0 (sv) 1985-07-26
IT7926435A0 (it) 1979-10-11
FR2438917A1 (fr) 1980-05-09
NL175358C (nl) 1984-10-16
FR2438917B1 (da) 1984-09-07
ES484652A1 (es) 1980-09-01
JPH07169950A (ja) 1995-07-04
SE8503615L (sv) 1985-07-26
CH660649A5 (de) 1987-05-15
JP2622378B2 (ja) 1997-06-18
SU1621817A3 (ru) 1991-01-15
CS222676B2 (en) 1983-07-29
PL123961B1 (en) 1982-12-31
AR219006A1 (es) 1980-07-15
GB2033658B (en) 1983-03-02
DK512388D0 (da) 1988-09-15
DK157272B (da) 1989-11-27
DE2940699A1 (de) 1980-04-24
SE465444B (sv) 1991-09-09
BR7906338A (pt) 1980-06-24
SE7908479L (sv) 1980-04-14
SE443682B (sv) 1986-03-03
NL7907472A (nl) 1980-04-15
HU182506B (en) 1984-01-30
NL175358B (nl) 1984-05-16
MX147137A (es) 1982-10-13
GB2033658A (en) 1980-05-21
CA1123119A (en) 1982-05-04
IT1193238B (it) 1988-06-15
DE2954481C2 (de) 1990-12-06
JPS6323365A (ja) 1988-01-30
DK512488A (da) 1988-09-15
CA1136291A (en) 1982-11-23
PL218878A1 (da) 1980-08-11
IL58128A (en) 1981-12-31
DK157272C (da) 1990-04-30

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