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DE69233134D1 - Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters - Google Patents

Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters

Info

Publication number
DE69233134D1
DE69233134D1 DE69233134T DE69233134T DE69233134D1 DE 69233134 D1 DE69233134 D1 DE 69233134D1 DE 69233134 T DE69233134 T DE 69233134T DE 69233134 T DE69233134 T DE 69233134T DE 69233134 D1 DE69233134 D1 DE 69233134D1
Authority
DE
Germany
Prior art keywords
high resolution
mask pattern
resolution reproduction
pattern adapted
reproduction method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69233134T
Other languages
English (en)
Other versions
DE69233134T2 (de
Inventor
Naomasa Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21089291A external-priority patent/JP3128876B2/ja
Priority claimed from JP21089191A external-priority patent/JP3343919B2/ja
Priority claimed from JP21128291A external-priority patent/JP3146542B2/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of DE69233134D1 publication Critical patent/DE69233134D1/de
Application granted granted Critical
Publication of DE69233134T2 publication Critical patent/DE69233134T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69233134T 1991-08-22 1992-08-21 Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters Expired - Lifetime DE69233134T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP21089291A JP3128876B2 (ja) 1991-08-22 1991-08-22 パターン作成方法、及びパターン作成システム
JP21089191 1991-08-22
JP21089191A JP3343919B2 (ja) 1991-08-22 1991-08-22 マスク及び回路素子製造方法並びに露光方法
JP21089291 1991-08-22
JP21128291A JP3146542B2 (ja) 1991-08-23 1991-08-23 マスク製造方法、及びマスク製造システム
JP21128291 1991-08-23

Publications (2)

Publication Number Publication Date
DE69233134D1 true DE69233134D1 (de) 2003-08-28
DE69233134T2 DE69233134T2 (de) 2004-04-15

Family

ID=27329181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69233134T Expired - Lifetime DE69233134T2 (de) 1991-08-22 1992-08-21 Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters

Country Status (3)

Country Link
US (1) US5546225A (de)
EP (2) EP1293833A1 (de)
DE (1) DE69233134T2 (de)

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JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
US6426269B1 (en) * 1999-10-21 2002-07-30 International Business Machines Corporation Dummy feature reduction using optical proximity effect correction
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JP4607380B2 (ja) * 2001-07-23 2011-01-05 富士通セミコンダクター株式会社 パターン検出方法、パターン検査方法およびパターン修正、加工方法
US20030233630A1 (en) * 2001-12-14 2003-12-18 Torbjorn Sandstrom Methods and systems for process control of corner feature embellishment
DE10242142A1 (de) * 2002-09-03 2004-03-25 Kleo Halbleitertechnik Gmbh & Co Kg Verfahren und Vorrichtung zum Herstellen von belichteten Strukturen
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
US7480889B2 (en) 2003-04-06 2009-01-20 Luminescent Technologies, Inc. Optimized photomasks for photolithography
US7124394B1 (en) * 2003-04-06 2006-10-17 Luminescent Technologies, Inc. Method for time-evolving rectilinear contours representing photo masks
US7698665B2 (en) * 2003-04-06 2010-04-13 Luminescent Technologies, Inc. Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
JP2005181663A (ja) * 2003-12-19 2005-07-07 Oki Electric Ind Co Ltd マスクパターンの修正方法
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KR101330344B1 (ko) * 2005-09-13 2013-11-15 루미네슨트 테크놀로지, 인크. 포토리소그래피용 시스템, 마스크 및 방법
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Also Published As

Publication number Publication date
EP0529971A1 (de) 1993-03-03
EP1293833A1 (de) 2003-03-19
EP0529971B1 (de) 2003-07-23
DE69233134T2 (de) 2004-04-15
US5546225A (en) 1996-08-13

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