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DE69838776D1 - PRD-Verfahren verwendendes Signalübertragungssystem sowie Empfängersystem und Halbleiterspeicheranordnung unter dessen Verwendung - Google Patents

PRD-Verfahren verwendendes Signalübertragungssystem sowie Empfängersystem und Halbleiterspeicheranordnung unter dessen Verwendung

Info

Publication number
DE69838776D1
DE69838776D1 DE69838776T DE69838776T DE69838776D1 DE 69838776 D1 DE69838776 D1 DE 69838776D1 DE 69838776 T DE69838776 T DE 69838776T DE 69838776 T DE69838776 T DE 69838776T DE 69838776 D1 DE69838776 D1 DE 69838776D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
signal transmission
transmission system
prd method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69838776T
Other languages
English (en)
Other versions
DE69838776T2 (de
Inventor
Miyoshi Saito
Junji Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69838776D1 publication Critical patent/DE69838776D1/de
Application granted granted Critical
Publication of DE69838776T2 publication Critical patent/DE69838776T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063Control signal output circuits, e.g. status or busy flags, feedback command signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076Timing circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4091Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065Differential amplifiers of latching type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048Data bus control circuits, e.g. precharging, presetting, equalising
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096Write circuits, e.g. I/O line write drivers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00Baseband systems
    • H04L25/02Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/03Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
    • H04L25/03878Line equalisers; line build-out devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002Isolation gates, i.e. gates coupling bit lines to the sense amplifier
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22Control and timing of internal memory operations
    • G11C2207/2227Standby or low power modes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22Control and timing of internal memory operations
    • G11C2207/229Timing of a write operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Dc Digital Transmission (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
DE69838776T 1997-11-19 1998-04-21 Signalübertragungssystem Expired - Lifetime DE69838776T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31857297A JP4197755B2 (ja) 1997-11-19 1997-11-19 信号伝送システム、該信号伝送システムのレシーバ回路、および、該信号伝送システムが適用される半導体記憶装置
JP31857297 1997-11-19

Publications (2)

Publication Number Publication Date
DE69838776D1 true DE69838776D1 (de) 2008-01-10
DE69838776T2 DE69838776T2 (de) 2008-10-30

Family

ID=18100640

Family Applications (4)

Application Number Title Priority Date Filing Date
DE69841225T Expired - Lifetime DE69841225D1 (de) 1997-11-19 1998-04-21 Ein das PRD-Verfahren verwendendes Signalübertragungssystem, passendes Empfängersystem sowie einschlägige Halbleiterspeicheranordnung hierzu
DE69838776T Expired - Lifetime DE69838776T2 (de) 1997-11-19 1998-04-21 Signalübertragungssystem
DE69841224T Expired - Lifetime DE69841224D1 (de) 1997-11-19 1998-04-21 PRD-Verfahren verwendendes Signalübertragungssystem, passendes Empfängersystem sowie einschlägige Halbleiterspeicheranordnung hierzu
DE69841228T Expired - Lifetime DE69841228D1 (de) 1997-11-19 1998-04-21 Signalübertragungssystem unter Verwendung eines PRD-Verfahrens, Empfängerschaltung zur Verwendung im Signalübertragungssystem und Halbleiterspeichervorrichtung mit dem Signalübertragungssystem

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69841225T Expired - Lifetime DE69841225D1 (de) 1997-11-19 1998-04-21 Ein das PRD-Verfahren verwendendes Signalübertragungssystem, passendes Empfängersystem sowie einschlägige Halbleiterspeicheranordnung hierzu

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69841224T Expired - Lifetime DE69841224D1 (de) 1997-11-19 1998-04-21 PRD-Verfahren verwendendes Signalübertragungssystem, passendes Empfängersystem sowie einschlägige Halbleiterspeicheranordnung hierzu
DE69841228T Expired - Lifetime DE69841228D1 (de) 1997-11-19 1998-04-21 Signalübertragungssystem unter Verwendung eines PRD-Verfahrens, Empfängerschaltung zur Verwendung im Signalübertragungssystem und Halbleiterspeichervorrichtung mit dem Signalübertragungssystem

Country Status (6)

Country Link
US (3) US6185256B1 (de)
EP (5) EP1798731B1 (de)
JP (1) JP4197755B2 (de)
KR (1) KR100305549B1 (de)
DE (4) DE69841225D1 (de)
TW (1) TW396307B (de)

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EP0918333A2 (de) 1999-05-26
TW396307B (en) 2000-07-01
DE69838776T2 (de) 2008-10-30
EP0918333B8 (de) 2008-10-15
EP1798731A3 (de) 2007-06-27
EP1351248B1 (de) 2009-10-07
US7505532B2 (en) 2009-03-17
DE69841228D1 (de) 2009-11-19
US20070071130A1 (en) 2007-03-29
US7154797B1 (en) 2006-12-26
JPH11149777A (ja) 1999-06-02
EP0918333B1 (de) 2007-11-28
EP1450374A1 (de) 2004-08-25
EP1351249A3 (de) 2006-06-14
EP1450374B1 (de) 2009-10-07
EP0918333A3 (de) 1999-09-15
EP1351248A2 (de) 2003-10-08
EP1351248A3 (de) 2004-01-02
KR100305549B1 (ko) 2001-11-22
US6185256B1 (en) 2001-02-06
EP1351249A2 (de) 2003-10-08
EP1798731B1 (de) 2009-10-07
JP4197755B2 (ja) 2008-12-17
KR19990044731A (ko) 1999-06-25
DE69841224D1 (de) 2009-11-19
DE69841225D1 (de) 2009-11-19
EP1798731A2 (de) 2007-06-20

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