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DE69737621D1 - Halbleiterelement mit einer Höckerelektrode - Google Patents

Halbleiterelement mit einer Höckerelektrode

Info

Publication number
DE69737621D1
DE69737621D1 DE69737621T DE69737621T DE69737621D1 DE 69737621 D1 DE69737621 D1 DE 69737621D1 DE 69737621 T DE69737621 T DE 69737621T DE 69737621 T DE69737621 T DE 69737621T DE 69737621 D1 DE69737621 D1 DE 69737621D1
Authority
DE
Germany
Prior art keywords
semiconductor element
bump electrode
bump
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69737621T
Other languages
English (en)
Other versions
DE69737621T2 (de
Inventor
Kazushi Higashi
Norihito Tsukahara
Takahiro Yonezawa
Yoshihiko Yagi
Yoshifumi Kitayama
Hiroyuki Otani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP26064596A external-priority patent/JP3532361B2/ja
Priority claimed from JP28983696A external-priority patent/JP3439048B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69737621D1 publication Critical patent/DE69737621D1/de
Publication of DE69737621T2 publication Critical patent/DE69737621T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H01L2224/78303—Shape of the pressing surface, e.g. tip or head
    • H—ELECTRICITY
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49174—Assembling terminal to elongated conductor
    • Y10T29/49179—Assembling terminal to elongated conductor by metal fusion bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49174—Assembling terminal to elongated conductor
    • Y10T29/49181—Assembling terminal to elongated conductor by deforming

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
DE1997637621 1996-10-01 1997-09-29 Halbleiterelement mit einer Höckerelektrode Expired - Fee Related DE69737621T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP26064596A JP3532361B2 (ja) 1996-10-01 1996-10-01 Ｉｃ電極上への突起電極形成方法
JP26064596 1996-10-01
JP28983696A JP3439048B2 (ja) 1996-10-31 1996-10-31 半導体素子、半導体素子の製造方法、半導体装置、及び半導体装置の製造方法
JP28983696 1996-10-31

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DE69737621D1 true DE69737621D1 (de) 2007-05-31
DE69737621T2 DE69737621T2 (de) 2007-12-20

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DE1997637621 Expired - Fee Related DE69737621T2 (de) 1996-10-01 1997-09-29 Halbleiterelement mit einer Höckerelektrode
DE1997629759 Expired - Fee Related DE69729759T2 (de) 1996-10-01 1997-09-29 Integrierte Schaltung oder Platine mit einer Höckerelektrode und Verfahren zu Ihrer Herstellung

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US (3) US6207549B1 (de)
EP (3) EP0834919B1 (de)
KR (1) KR100283501B1 (de)
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DE (3) DE69739125D1 (de)
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CN100353499C (zh) 2007-12-05
SG79222A1 (en) 2001-03-20
DE69729759T2 (de) 2005-07-07
US20010005054A1 (en) 2001-06-28
KR100283501B1 (ko) 2001-03-02
CN1181531C (zh) 2004-12-22
EP0834919A2 (de) 1998-04-08
EP1158579B1 (de) 2008-11-19
EP0834919A3 (de) 2000-02-09
DE69737621T2 (de) 2007-12-20
CN1549305A (zh) 2004-11-24
TW366542B (en) 1999-08-11
US20050146029A1 (en) 2005-07-07
CN1179625A (zh) 1998-04-22
DE69739125D1 (de) 2009-01-02
KR19980032440A (ko) 1998-07-25
US7071090B2 (en) 2006-07-04
US6207549B1 (en) 2001-03-27
SG103272A1 (en) 2004-04-29
EP1158578A1 (de) 2001-11-28
US6894387B2 (en) 2005-05-17
EP0834919B1 (de) 2007-04-18
DE69729759D1 (de) 2004-08-05
EP1158579A1 (de) 2001-11-28
EP1158578B1 (de) 2004-06-30

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