[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP2501126B2 - アルミニウムリ―ド端子への金線ボンデイング方法 - Google Patents

アルミニウムリ―ド端子への金線ボンデイング方法

Info

Publication number
JP2501126B2
JP2501126B2 JP24503589A JP24503589A JP2501126B2 JP 2501126 B2 JP2501126 B2 JP 2501126B2 JP 24503589 A JP24503589 A JP 24503589A JP 24503589 A JP24503589 A JP 24503589A JP 2501126 B2 JP2501126 B2 JP 2501126B2
Authority
JP
Japan
Prior art keywords
bonding
gold wire
wire
aluminum
lead terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP24503589A
Other languages
English (en)
Other versions
JPH03108347A (ja
Inventor
辰夫 中野
清一 山崎
和男 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP24503589A priority Critical patent/JP2501126B2/ja
Publication of JPH03108347A publication Critical patent/JPH03108347A/ja
Application granted granted Critical
Publication of JP2501126B2 publication Critical patent/JP2501126B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、回路基板に搭載された半導体等とアルミニ
ウムリード端子とをワイヤーボンディングする際に、特
定のキャピラリーツールを装着したボールボンダーを用
いて金線をボンディングすることにより接合性に富んだ
金線ボンディング方法に関するものである。
（従来の技術） 従来ワイヤーボンディング用部分にアルミニウム箔を
用いたプリント配線基板は、半導体等とアルミニウムリ
ード端子とをワイヤーボンディングやクロスオーバーワ
イヤーボンディングする際、接合性にすぐれたアルミニ
ウム線が使用されている。そしてアルミニウム箔をワイ
ヤーボンディング用部分に用いたプリント配線基板は、
めっき等に貴金属類を使用しないため配線基板も安価で
あり、産業上重要な位置を占めている。
しかしアルミニウム線のワイヤーボンディング方法
は、一般にウエツジボンディング法が使用されており接
合性には信頼性があるが、ウエツジボンディング法は、
第１接合部から第２接合部へワイヤーを張る方向が制限
される欠点を有している。またこの方向性を解消する方
法として配線基板を回転台に乗せ回転させながらボンデ
ィングする方法もあるが、配線基板の大きさに制限もあ
り、全てを満足することができない。
また他のワイヤーボンディング方法としては金線のボ
ールボンディング法があるが、アルミニウムリード端子
はシリコン上に蒸着して形成したIC電極やニッケル上に
数μｍの金めっきをした金めっきリード端子とは異な
り、アルミニウムの肉厚が数10μｍと厚いアルミニウム
単独若しくは銅とアルミニウムとのクラッド箔又はアル
ミニウムに銅めっきした材料を使用するために第１接合
部は問題ないが第２接合部をボンディングする際にボー
ルボンダーに装着したキャピラリーツール先端が前記ア
ルミニウムへ過度に押し込まれたり、金線の変形が大き
く極くわずかな接合強度しか得られない。このために半
導体等と金線との間に断線等の不良現象が発生し、信頼
性低下の原因となる。
（発明が解決しようとする課題） 本発明は、かかる欠点を解決するものであり、回路基
板に搭載された半導体等と表面がアルミニウムからなる
ボンディング用部分とをワイヤーでボンディングするに
際し、特定されたキャピラリーツールを装着したボール
ボンダーを使用し、接合ワイヤーとして金線を使用する
ことによりアルミニウムリード端子へ接合信頼性にすぐ
れた効果を有する金線ボンディング方法を見い出し本発
明を完成するに至った。
（課題を解決するための手段） すなわち本発明は、先端傾斜角度（θ）が６°〜10°
を有するキャピラリーツールを装着した加熱・超音波併
用型金線ボールボンダーを使用してアルミニウムリード
端子に金線をボンディングすることを特徴とする金線ボ
ンディング方法である。
（実施例） 以下図面により本発明を詳細に説明する。
第１図は本発明に用いられる加熱・超音波併用型金線
ボールボンダーに装置するキャピラリーツールの部分拡
大図である。本発明のボールボンダーに装着されるキャ
ピラリーツールの先端傾斜角度（θ）３は６°〜10°の
範囲が好ましい。角度が６°未満では、ボンディングの
際に金線の過度の変形が起こり、接合部分の強度が低下
するか又は接合不良となる。また10°を超えるとキャピ
ラリーツール先端の陥没が大きくなり、金線の超音波振
動でのアルミニウムに接合する面積が減少するため接合
強度が低下する。
次に孔口１に連なる先端開口径４に関連する開口角度
７は90°〜120°の範囲が好ましく、90°未満では被着
体であるアルミニウムリード端子部分が開口角度７部に
詰まる傾向が強く、連続したワイヤーボンディングを阻
害する。また120°を超えると第２ボンディング終了後
の金線の切断性が悪くなる。
孔口１の径は使用する金線の径により、作業性、ワイ
ヤーボンディング位置精度等を良好に決められ、通常特
別な場合を除き使用金線径＋10〜25μｍ程度が使用され
る。
更に、キャピラリーツール先端外径部６は大きいほど
接合面積が大きくなり、接合強度は増加するがIC側の電
極サイズや電極の配置で制限される。外側コーナー５は
使用する線径により変わるが小さいもの程接合部直前の
金線切断が起こり易くなり見かけの強度は減少する。ま
た大き過ぎると、接合面積が減少するため強度は低下す
る。
一般的には金線径が30μｍでは外側コーナ５は40μｍ
程度が良好な結果をもたらす。
このようにキャピラリーツールの先端主要部分を限定
した表面がアルミニウムより成形されたボンディング用
部分に金線が過度に変形せず安定した定格電流を流すこ
とができる。
実施例１〜３、比較例１〜３ ワイヤーボンダー（超音波工業社製 サーモソニック
ボールボンダーUBB−５−1A）にキャピラリーツール
（品川白煉瓦社製）を装着し、アルミニウムリード端子
を有するプリント配線基板（電気化学工業社製HITTプレ
ートアルミニウムリード端子部厚さ40μｍ）にワイヤー
ボンディング間隔5mmで金線（田中貴金属社製 SRタイ
プ直径25μｍ）ボンディングした。次いでワイヤーボン
ディングした金線の２点間の中央をプルテスターで引張
り接合強度を測定した。
ワイヤーボンダー調整条件：温度175℃ 荷重 50g 第１ボンディング：超音波出力 0.04ワット ボンディングタイム 0.1秒 第２ボンディング：超音波出力 0.09ワット ボンディングタイム 0.3秒 共通：孔口径＝46μm, 孔口開口傾斜幅＝15μm, 先端開口径＝102μm, 外側コーナーＲ＝30μm, 先端外径＝254μｍ （発明の効果） 以上説明したとおり本発明は、回路基板のワイヤーボ
ンディング用リード端子にアルミニウムを使用するに際
し、先端傾斜角度（θ）が特定された治具（キャピラリ
ーツール）を装着した加熱・超音波併用型金線ボールボ
ンダーを使用することにより、信頼性の高い金線ボンデ
ィングが可能となり、半導体等と導電回路との接合性が
容易となり、高信頼性のある回路を得ることができる特
徴を有するものである。
【図面の簡単な説明】
第１図は本発明に用いられるボールボンダー装置用キャ
ピラリーツール先端部の部分拡大図を示す。 符号 １……孔口、２……孔口開口傾斜部 ３……先端傾斜角度（θ）、４……先端開口径 ５……外側コーナー、６……先端外径部 ７……開口角度

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】先端傾斜角度（θ）が６°〜10°を有する
    キャピラリーツールを装着した加熱・超音波併用型金線
    ボールボンダーを使用してアルミニウムリード端子に金
    線をボンディングすることを特徴とする金線ボンディン
    グ方法。
JP24503589A 1989-09-22 1989-09-22 アルミニウムリ―ド端子への金線ボンデイング方法 Expired - Fee Related JP2501126B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24503589A JP2501126B2 (ja) 1989-09-22 1989-09-22 アルミニウムリ―ド端子への金線ボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24503589A JP2501126B2 (ja) 1989-09-22 1989-09-22 アルミニウムリ―ド端子への金線ボンデイング方法

Publications (2)

Publication Number Publication Date
JPH03108347A JPH03108347A (ja) 1991-05-08
JP2501126B2 true JP2501126B2 (ja) 1996-05-29

Family

ID=17127616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24503589A Expired - Fee Related JP2501126B2 (ja) 1989-09-22 1989-09-22 アルミニウムリ―ド端子への金線ボンデイング方法

Country Status (1)

Country Link
JP (1) JP2501126B2 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0525644A1 (en) * 1991-07-24 1993-02-03 Denki Kagaku Kogyo Kabushiki Kaisha Circuit substrate for mounting a semiconductor element
DE69739125D1 (de) 1996-10-01 2009-01-02 Panasonic Corp Kapillare zum Drahtverbinden zur Herstellung von Höckerelektroden
CN103809474A (zh) * 2014-02-14 2014-05-21 中国电子科技集团公司第四十五研究所 一种电子打火装置及其通信方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138850A (en) * 1979-04-17 1980-10-30 Toshiba Corp Bonding capillary
JPH01120332U (ja) * 1988-02-08 1989-08-15

Also Published As

Publication number Publication date
JPH03108347A (ja) 1991-05-08

Similar Documents

Publication Publication Date Title
US6650013B2 (en) Method of manufacturing wire bonded microelectronic device assemblies
JP3344235B2 (ja) ワイヤボンディング方法
US8129263B2 (en) Wire bond interconnection and method of manufacture thereof
US6864166B1 (en) Method of manufacturing wire bonded microelectronic device assemblies
JPH11328352A (ja) アンテナとｉｃチップとの接続構造、及びｉｃカード
US6924554B2 (en) Wirebond structure and method to connect to a microelectronic die
US20080272487A1 (en) System for implementing hard-metal wire bonds
JP3663295B2 (ja) チップスケールパッケージ
US20100181675A1 (en) Semiconductor package with wedge bonded chip
JP2501126B2 (ja) アルミニウムリ―ド端子への金線ボンデイング方法
JP3036498B2 (ja) 半導体パッケージ
JPH05218127A (ja) 半導体装置及びその製造方法
JPH09232499A (ja) 半導体装置
WO2020001979A1 (en) A wire bonding arrangement and method of manufacturing a wire bonding arrangement
US8247272B2 (en) Copper on organic solderability preservative (OSP) interconnect and enhanced wire bonding process
JP4629284B2 (ja) 半導体装置およびその製造方法
JP2002329741A (ja) 銅ボンディングワイヤー
Johnson et al. Thermosonic gold wire bonding to laminate substrates with palladium surface finishes
JP3887993B2 (ja) Ｉｃチップと回路基板との接続方法
JPS63152161A (ja) 半導体装置
JP3855523B2 (ja) Ｉｃチップと回路基板との接続方法
KR100422271B1 (ko) 마이크로 비지에이 방식 반도체 패키지의 빔 리드
JP4203193B2 (ja) 半導体素子の実装方法
JPH05175408A (ja) 半導体素子の実装用材料および実装方法
JP2996090B2 (ja) 半導体装置

Legal Events

Date Code Title Description
S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees