DE69721210D1 - Halbleiterspeicheranordnung - Google Patents
HalbleiterspeicheranordnungInfo
- Publication number
- DE69721210D1 DE69721210D1 DE69721210T DE69721210T DE69721210D1 DE 69721210 D1 DE69721210 D1 DE 69721210D1 DE 69721210 T DE69721210 T DE 69721210T DE 69721210 T DE69721210 T DE 69721210T DE 69721210 D1 DE69721210 D1 DE 69721210D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34551796 | 1996-12-25 | ||
JP34551796 | 1996-12-25 | ||
JP6782997 | 1997-03-21 | ||
JP06782997A JP3299910B2 (ja) | 1996-12-25 | 1997-03-21 | 半導体記憶装置およびその読み出し方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69721210D1 true DE69721210D1 (de) | 2003-05-28 |
DE69721210T2 DE69721210T2 (de) | 2004-02-12 |
Family
ID=26409033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69721210T Expired - Lifetime DE69721210T2 (de) | 1996-12-25 | 1997-12-19 | Halbleiterspeicheranordnung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5917767A (de) |
EP (1) | EP0851430B1 (de) |
JP (1) | JP3299910B2 (de) |
KR (1) | KR100264255B1 (de) |
DE (1) | DE69721210T2 (de) |
TW (1) | TW358940B (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3481817B2 (ja) * | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
US6134140A (en) | 1997-05-14 | 2000-10-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells |
JP4550855B2 (ja) * | 2000-03-08 | 2010-09-22 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6515902B1 (en) * | 2001-06-04 | 2003-02-04 | Advanced Micro Devices, Inc. | Method and apparatus for boosting bitlines for low VCC read |
JP2004310812A (ja) * | 2003-04-02 | 2004-11-04 | Renesas Technology Corp | 半導体メモリ |
US6992939B2 (en) * | 2004-01-26 | 2006-01-31 | Micron Technology, Inc. | Method and apparatus for identifying short circuits in an integrated circuit device |
US7580287B2 (en) | 2005-09-01 | 2009-08-25 | Micron Technology, Inc. | Program and read trim setting |
US20160254060A1 (en) * | 2013-03-15 | 2016-09-01 | Taqua Wbh, Llc | High Speed And Low Power Sense Amplifier |
US10381054B1 (en) | 2018-02-27 | 2019-08-13 | Globalfoundries Inc. | Common boosted assist |
CN113129944A (zh) * | 2019-12-31 | 2021-07-16 | 台湾积体电路制造股份有限公司 | 集成电路及其方法 |
JPWO2023166376A1 (de) * | 2022-03-04 | 2023-09-07 | ||
WO2023242668A1 (ja) * | 2022-06-16 | 2023-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び記憶装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235195A (ja) * | 1993-06-22 | 1995-09-05 | Youzan:Kk | メモリ回路 |
JPH0757466A (ja) * | 1993-08-12 | 1995-03-03 | Toshiba Corp | 半導体集積回路 |
JP3476952B2 (ja) * | 1994-03-15 | 2003-12-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
EP0724266B1 (de) * | 1995-01-27 | 2001-12-12 | STMicroelectronics S.r.l. | Schnittweises Annäherungsverfahren zum Abtasten von nichtflüchtigen Mehrfachniveauspeicherzellen und dementsprechende Abtastschaltung |
JPH0935474A (ja) * | 1995-07-19 | 1997-02-07 | Fujitsu Ltd | 半導体記憶装置 |
-
1997
- 1997-03-21 JP JP06782997A patent/JP3299910B2/ja not_active Expired - Lifetime
- 1997-12-18 US US08/993,797 patent/US5917767A/en not_active Expired - Lifetime
- 1997-12-19 EP EP97310351A patent/EP0851430B1/de not_active Expired - Lifetime
- 1997-12-19 TW TW086119318A patent/TW358940B/zh not_active IP Right Cessation
- 1997-12-19 DE DE69721210T patent/DE69721210T2/de not_active Expired - Lifetime
- 1997-12-24 KR KR1019970072864A patent/KR100264255B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100264255B1 (ko) | 2000-08-16 |
US5917767A (en) | 1999-06-29 |
EP0851430B1 (de) | 2003-04-23 |
EP0851430A2 (de) | 1998-07-01 |
DE69721210T2 (de) | 2004-02-12 |
TW358940B (en) | 1999-05-21 |
KR19980064537A (ko) | 1998-10-07 |
JP3299910B2 (ja) | 2002-07-08 |
EP0851430A3 (de) | 1999-05-26 |
JPH10241386A (ja) | 1998-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Ref document number: 851430 Country of ref document: EP Representative=s name: PATENTANWAELTE RUFF, WILHELM, BEIER, DAUSTER & PAR |