DE68915413D1 - Anzeigevorrichtung mit aktiver Matrix. - Google Patents
Anzeigevorrichtung mit aktiver Matrix.Info
- Publication number
- DE68915413D1 DE68915413D1 DE68915413T DE68915413T DE68915413D1 DE 68915413 D1 DE68915413 D1 DE 68915413D1 DE 68915413 T DE68915413 T DE 68915413T DE 68915413 T DE68915413 T DE 68915413T DE 68915413 D1 DE68915413 D1 DE 68915413D1
- Authority
- DE
- Germany
- Prior art keywords
- display device
- active matrix
- matrix display
- active
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136268—Switch defects
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63321361A JPH02165125A (ja) | 1988-12-20 | 1988-12-20 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68915413D1 true DE68915413D1 (de) | 1994-06-23 |
DE68915413T2 DE68915413T2 (de) | 1994-11-17 |
Family
ID=18131714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68915413T Expired - Lifetime DE68915413T2 (de) | 1988-12-20 | 1989-12-11 | Anzeigevorrichtung mit aktiver Matrix. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5173792A (de) |
EP (1) | EP0375233B1 (de) |
JP (1) | JPH02165125A (de) |
DE (1) | DE68915413T2 (de) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0438138B1 (de) * | 1990-01-17 | 1995-03-15 | Kabushiki Kaisha Toshiba | Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix |
JPH06100757B2 (ja) * | 1990-07-09 | 1994-12-12 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 液晶表示装置 |
JP2711015B2 (ja) * | 1990-07-25 | 1998-02-10 | 三菱電機株式会社 | マトリクス形表示装置 |
US5287206A (en) * | 1990-11-30 | 1994-02-15 | Sharp Kabushiki Kaisha | Active matrix display device |
JP2650780B2 (ja) * | 1990-11-30 | 1997-09-03 | シャープ株式会社 | アクティブマトリクス基板 |
JP2999271B2 (ja) * | 1990-12-10 | 2000-01-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
US6713783B1 (en) * | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JPH07119919B2 (ja) * | 1991-05-15 | 1995-12-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 液晶表示装置 |
US5414278A (en) * | 1991-07-04 | 1995-05-09 | Mitsushibi Denki Kabushiki Kaisha | Active matrix liquid crystal display device |
JPH05119344A (ja) * | 1991-10-25 | 1993-05-18 | Nec Corp | 液晶表示デバイス |
GB9219836D0 (en) * | 1992-09-18 | 1992-10-28 | Philips Electronics Uk Ltd | Electronic drive circuits for active matrix devices,and a method of self-tasting and programming such circuits |
KR100268007B1 (ko) * | 1992-12-22 | 2000-10-16 | 구본준 | 액정표시소자 제조방법 |
US5555001A (en) * | 1994-03-08 | 1996-09-10 | Prime View Hk Limited | Redundant scheme for LCD display with integrated data driving circuit |
US6943764B1 (en) | 1994-04-22 | 2005-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit for an active matrix display device |
JP3402400B2 (ja) | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
CN1146056C (zh) | 1994-06-02 | 2004-04-14 | 株式会社半导体能源研究所 | 有源矩阵显示器 |
JP3897826B2 (ja) * | 1994-08-19 | 2007-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
US5956008A (en) * | 1994-09-06 | 1999-09-21 | Semiconductor Energy Laboratory Co., | Driver circuit for active matrix display and method of operating same |
US5929464A (en) * | 1995-01-20 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-optical device |
JP3418653B2 (ja) | 1995-09-28 | 2003-06-23 | シャープ株式会社 | アクティブマトリクス型液晶表示装置 |
JP3256110B2 (ja) * | 1995-09-28 | 2002-02-12 | シャープ株式会社 | 液晶表示装置 |
JP4059292B2 (ja) * | 1996-09-26 | 2008-03-12 | セイコーエプソン株式会社 | 表示装置 |
GB9705417D0 (en) * | 1997-03-15 | 1997-04-30 | Sharp Kk | Fault tolerant circuit arrangements |
KR100430773B1 (ko) * | 1998-07-14 | 2004-05-10 | 가부시끼가이샤 도시바 | 액티브 매트릭스형 액정표시장치 |
US6512504B1 (en) * | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
JP4755748B2 (ja) * | 1999-09-24 | 2011-08-24 | 東芝モバイルディスプレイ株式会社 | 平面表示装置 |
TWI301915B (de) | 2000-03-17 | 2008-10-11 | Seiko Epson Corp | |
JP3645184B2 (ja) * | 2000-05-31 | 2005-05-11 | シャープ株式会社 | 液晶表示装置及びその欠陥修正方法 |
JP4925528B2 (ja) * | 2000-09-29 | 2012-04-25 | 三洋電機株式会社 | 表示装置 |
JP4632522B2 (ja) * | 2000-11-30 | 2011-02-16 | Nec液晶テクノロジー株式会社 | 反射型液晶表示装置の製造方法 |
TW466673B (en) * | 2000-12-11 | 2001-12-01 | Unipac Optoelectronics Corp | Cst on common structure |
JP3520417B2 (ja) * | 2000-12-14 | 2004-04-19 | セイコーエプソン株式会社 | 電気光学パネルおよび電子機器 |
US7280090B2 (en) | 2000-12-22 | 2007-10-09 | Electronics For Imaging, Inc. | Methods and apparatus for repairing inoperative pixels in a display |
GB2372620A (en) | 2001-02-27 | 2002-08-28 | Sharp Kk | Active Matrix Device |
GB0112561D0 (en) * | 2001-05-23 | 2001-07-18 | Koninl Philips Electronics Nv | Active plate |
KR100469342B1 (ko) * | 2001-07-11 | 2005-02-02 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 |
US7112517B2 (en) | 2001-09-10 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Laser treatment device, laser treatment method, and semiconductor device fabrication method |
JP2003091245A (ja) | 2001-09-18 | 2003-03-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US6862052B2 (en) * | 2001-12-14 | 2005-03-01 | Samsung Electronics Co., Ltd. | Liquid crystal display, thin film transistor array panel for liquid crystal display and manufacturing method thereof |
US20040110326A1 (en) * | 2002-11-20 | 2004-06-10 | Charles Forbes | Active matrix thin film transistor array backplane |
TWI224234B (en) * | 2003-08-12 | 2004-11-21 | Quanta Display Inc | Pixel structure and fabricating method thereof |
KR20050041010A (ko) * | 2003-10-29 | 2005-05-04 | 삼성전자주식회사 | 박막 다이오드 표시판 및 그 제조 방법 |
TWI277935B (en) * | 2004-01-06 | 2007-04-01 | Hannstar Display Corp | Pixel structure and exposure method thereof |
JP4088619B2 (ja) * | 2004-01-28 | 2008-05-21 | シャープ株式会社 | アクティブマトリクス基板及び表示装置 |
JP4627081B2 (ja) * | 2004-01-28 | 2011-02-09 | シャープ株式会社 | アクティブマトリクス基板及び表示装置 |
JP2005252228A (ja) * | 2004-02-05 | 2005-09-15 | Sharp Corp | 表示装置及びその製造方法 |
TWI282969B (en) * | 2004-04-29 | 2007-06-21 | Au Optronics Corp | Thin film transistor array and fabricating method thereof |
US20050275352A1 (en) * | 2004-06-14 | 2005-12-15 | Au Optronics Corporation. | Redundant storage capacitor and method for repairing OLED pixels and driving circuits |
JP4829534B2 (ja) * | 2005-05-31 | 2011-12-07 | シャープ株式会社 | 薄膜トランジスタマトリクス基板及びその欠陥修復方法 |
CN100555366C (zh) * | 2005-09-22 | 2009-10-28 | 夏普株式会社 | 有源矩阵衬底、显示装置、电视接收装置、有源矩阵衬底的制造方法、以及显示装置的制造方法 |
US8947297B2 (en) * | 2006-01-30 | 2015-02-03 | The Invention Science Fund I, Llc | Positional display elements |
KR101232157B1 (ko) * | 2006-06-09 | 2013-02-12 | 엘지디스플레이 주식회사 | Lcd 검사 장비 |
JP5004908B2 (ja) * | 2008-09-05 | 2012-08-22 | パナソニック液晶ディスプレイ株式会社 | 液晶表示装置 |
WO2010052954A1 (ja) | 2008-11-05 | 2010-05-14 | シャープ株式会社 | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機 |
BRPI0922157A2 (pt) | 2008-12-10 | 2015-12-29 | Sharp Kk | substrato de matriz ativa, método de fabricação de substrato de matriz ativa, painel de cristal líquido, método de fabricação de painel de cristal líquido, dispositivo de exibição de cristal líquido, unidade de exibição de cristal líquido, e receptor de televisão |
EP2256544A1 (de) * | 2009-05-27 | 2010-12-01 | Polymer Vision Limited | Verfahren zur Herstellung einer Anzeigetafel und Anzeigetafel mit reparierfähigen Elementen |
TWI409894B (zh) * | 2010-07-09 | 2013-09-21 | Chunghwa Picture Tubes Ltd | 薄膜電晶體之對位檢測方法 |
CN103018987B (zh) * | 2012-12-06 | 2015-05-13 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
KR20140120167A (ko) * | 2013-04-02 | 2014-10-13 | 삼성디스플레이 주식회사 | 수리된 화소를 갖는 유기전계발광 표시장치 및 그의 화소 수리방법 |
CN105308668B (zh) * | 2013-06-27 | 2018-02-02 | 凸版印刷株式会社 | 薄膜晶体管阵列及其制造方法、图像显示装置及显示方法 |
JP6451054B2 (ja) * | 2014-01-23 | 2019-01-16 | 凸版印刷株式会社 | 薄膜トランジスタアレイ、その製造方法及び画像表示装置 |
KR102296945B1 (ko) * | 2014-07-04 | 2021-09-01 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN109270756B (zh) * | 2018-09-30 | 2020-12-25 | 惠科股份有限公司 | 一种显示面板和显示装置 |
JP7193404B2 (ja) * | 2019-03-29 | 2022-12-20 | 株式会社ジャパンディスプレイ | 表示装置 |
CN114446187B (zh) * | 2020-11-03 | 2023-06-27 | 成都辰显光电有限公司 | 驱动背板、显示面板及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3532813A (en) * | 1967-09-25 | 1970-10-06 | Rca Corp | Display circuit including charging circuit and fast reset circuit |
JPS55120175A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural super-capacitance variable electrode structures |
US4431271A (en) * | 1979-09-06 | 1984-02-14 | Canon Kabushiki Kaisha | Display device with a thin film transistor and storage condenser |
JPS59119390A (ja) * | 1982-12-25 | 1984-07-10 | 株式会社東芝 | 薄膜トランジスタ回路 |
US4748445A (en) * | 1983-07-13 | 1988-05-31 | Citizen Watch Co., Ltd. | Matrix display panel having a diode ring structure as a resistive element |
US4639087A (en) * | 1984-08-08 | 1987-01-27 | Energy Conversion Devices, Inc. | Displays having pixels with two portions and capacitors |
US4728172A (en) * | 1984-08-08 | 1988-03-01 | Energy Conversion Devices, Inc. | Subassemblies for displays having pixels with two portions and capacitors |
GB8508656D0 (en) * | 1985-04-03 | 1985-05-09 | Gen Electric Co Plc | Liquid crystal displays |
US4728175A (en) * | 1986-10-09 | 1988-03-01 | Ovonic Imaging Systems, Inc. | Liquid crystal display having pixels with auxiliary capacitance |
US4820222A (en) * | 1986-12-31 | 1989-04-11 | Alphasil, Inc. | Method of manufacturing flat panel backplanes including improved testing and yields thereof and displays made thereby |
US4762398A (en) * | 1987-01-26 | 1988-08-09 | Hosiden Electronics Co., Ltd. | Pixel transistor free of parasitic capacitance fluctuations from misalignment |
EP0283290B1 (de) * | 1987-03-18 | 1994-09-21 | Matsushita Electric Industrial Co., Ltd. | Videoprojektor |
GB2206721A (en) * | 1987-07-03 | 1989-01-11 | Philips Electronic Associated | Active matrix display device |
JPS6437585A (en) * | 1987-08-04 | 1989-02-08 | Nippon Telegraph & Telephone | Active matrix type display device |
JPS6473324A (en) * | 1987-09-14 | 1989-03-17 | Matsushita Electric Ind Co Ltd | Display device and its driving method |
JPH0251129A (ja) * | 1988-08-12 | 1990-02-21 | Sanyo Electric Co Ltd | アクテイブマトリクス液晶表示パネル |
KR940005124B1 (ko) * | 1989-10-04 | 1994-06-11 | 호시덴 가부시기가이샤 | 액정표시소자 |
-
1988
- 1988-12-20 JP JP63321361A patent/JPH02165125A/ja active Pending
-
1989
- 1989-12-11 EP EP89312881A patent/EP0375233B1/de not_active Expired - Lifetime
- 1989-12-11 DE DE68915413T patent/DE68915413T2/de not_active Expired - Lifetime
- 1989-12-19 US US07/454,396 patent/US5173792A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02165125A (ja) | 1990-06-26 |
EP0375233A2 (de) | 1990-06-27 |
EP0375233A3 (de) | 1991-01-16 |
DE68915413T2 (de) | 1994-11-17 |
US5173792A (en) | 1992-12-22 |
EP0375233B1 (de) | 1994-05-18 |
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