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DE60215523D1 - Abscheidungsverfahren von einer oxydschicht auf einem substrat und dieses verwendende photovoltaische zelle - Google Patents

Abscheidungsverfahren von einer oxydschicht auf einem substrat und dieses verwendende photovoltaische zelle

Info

Publication number
DE60215523D1
DE60215523D1 DE60215523T DE60215523T DE60215523D1 DE 60215523 D1 DE60215523 D1 DE 60215523D1 DE 60215523 T DE60215523 T DE 60215523T DE 60215523 T DE60215523 T DE 60215523T DE 60215523 D1 DE60215523 D1 DE 60215523D1
Authority
DE
Germany
Prior art keywords
substrate
deposition process
photovoltaic cell
oxyde
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60215523T
Other languages
English (en)
Other versions
DE60215523T2 (de
Inventor
Ulrich Kroll
Johannes Meier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite de Neuchatel
Original Assignee
Universite de Neuchatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite de Neuchatel filed Critical Universite de Neuchatel
Publication of DE60215523D1 publication Critical patent/DE60215523D1/de
Application granted granted Critical
Publication of DE60215523T2 publication Critical patent/DE60215523T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Hybrid Cells (AREA)
  • Chemically Coating (AREA)
DE60215523T 2001-08-30 2002-08-23 Abscheidungsverfahren von einer oxydschicht auf einem substrat und dieses verwendende photovoltaische zelle Expired - Lifetime DE60215523T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01810840 2001-08-30
EP01810840A EP1289025A1 (de) 2001-08-30 2001-08-30 Abscheidungsverfahren von einer Oxydschicht auf einem Substrat und dieses verwendende photovoltaische Zelle
PCT/CH2002/000458 WO2003021690A2 (fr) 2001-08-30 2002-08-23 Procede de depot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat

Publications (2)

Publication Number Publication Date
DE60215523D1 true DE60215523D1 (de) 2006-11-30
DE60215523T2 DE60215523T2 (de) 2007-06-21

Family

ID=8184115

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60215523T Expired - Lifetime DE60215523T2 (de) 2001-08-30 2002-08-23 Abscheidungsverfahren von einer oxydschicht auf einem substrat und dieses verwendende photovoltaische zelle

Country Status (8)

Country Link
US (1) US7390731B2 (de)
EP (2) EP1289025A1 (de)
JP (1) JP4491233B2 (de)
CN (1) CN1326255C (de)
AU (1) AU2002322952A1 (de)
DE (1) DE60215523T2 (de)
ES (1) ES2274069T3 (de)
WO (1) WO2003021690A2 (de)

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JP4845742B2 (ja) * 2004-02-13 2011-12-28 シェル ゾーラー ゲーエムベーハー ウエハに液状ドーパント溶液を塗布するための機器
WO2005078154A1 (ja) * 2004-02-16 2005-08-25 Kaneka Corporation 透明導電膜の製造方法、及びタンデム型薄膜光電変換装置の製造方法
JP4918224B2 (ja) * 2005-01-21 2012-04-18 昭和シェル石油株式会社 透明導電膜製膜装置及び多層透明導電膜連続製膜装置
US8197914B2 (en) 2005-11-21 2012-06-12 Air Products And Chemicals, Inc. Method for depositing zinc oxide at low temperatures and products formed thereby
EP1840966A1 (de) * 2006-03-30 2007-10-03 Universite De Neuchatel Transparente, leitende und strukturierte Schicht sowie Verfahren zu ihrer Herstellung
EP2059488A1 (de) 2006-08-29 2009-05-20 Pilkington Group Limited Verfahren zur herstellung eines mit eine geringe spezifische leitfähigkeit aufweisendem dotiertem zinkoxid beschichteten glasartikels und dadurch hergestellter beschichteter glasartikel
US20080128022A1 (en) * 2006-11-15 2008-06-05 First Solar, Inc. Photovoltaic device including a tin oxide protective layer
DE102006062019A1 (de) * 2006-12-29 2008-07-03 Näbauer, Anton, Dr. Verfahren zur Herstellung von mechanisch stabilen Dünnschicht Photovoltaik Solarmodulen unter Verwendung von Glas
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
CN101842875A (zh) 2007-11-02 2010-09-22 应用材料股份有限公司 在沉积处理间实施的等离子处理
US20100264035A1 (en) * 2009-04-15 2010-10-21 Solopower, Inc. Reel-to-reel plating of conductive grids for flexible thin film solar cells
US9528182B2 (en) 2009-06-22 2016-12-27 Arkema Inc. Chemical vapor deposition using N,O polydentate ligand complexes of metals
JP5508800B2 (ja) * 2009-09-30 2014-06-04 株式会社カネカ 薄膜の製造方法、並びに、太陽電池の製造方法
US8525019B2 (en) 2010-07-01 2013-09-03 Primestar Solar, Inc. Thin film article and method for forming a reduced conductive area in transparent conductive films for photovoltaic modules
CN103493215A (zh) 2010-09-03 2014-01-01 康宁股份有限公司 织构化玻璃上的多结构型薄膜硅太阳能电池
US8628997B2 (en) * 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8906732B2 (en) * 2010-10-01 2014-12-09 Stion Corporation Method and device for cadmium-free solar cells
DE102015215434A1 (de) * 2015-08-13 2017-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Abscheidung dünner Schichten

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Publication number Priority date Publication date Assignee Title
US4513057A (en) 1982-06-10 1985-04-23 Hughes Aircraft Company Process for forming sulfide layers
US4605565A (en) * 1982-12-09 1986-08-12 Energy Conversion Devices, Inc. Method of depositing a highly conductive, highly transmissive film
JPH0682625B2 (ja) * 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． 酸化亜鉛膜の蒸着方法
JPS6289873A (ja) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd 透明導電膜形成方法
US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
US5252140A (en) * 1987-07-24 1993-10-12 Shigeyoshi Kobayashi Solar cell substrate and process for its production
JPH01298164A (ja) * 1988-05-25 1989-12-01 Canon Inc 機能性堆積膜の形成方法
US4990286A (en) * 1989-03-17 1991-02-05 President And Fellows Of Harvard College Zinc oxyfluoride transparent conductor
JP2538042B2 (ja) * 1989-03-29 1996-09-25 株式会社エステック 有機金属化合物の気化供給方法とその装置
JP2881929B2 (ja) * 1990-03-27 1999-04-12 松下電器産業株式会社 アルミナ膜の製造方法
US5711816A (en) * 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
JP3380610B2 (ja) * 1993-11-30 2003-02-24 株式会社サムコインターナショナル研究所 液体原料ｃｖｄ装置
US5397920A (en) * 1994-03-24 1995-03-14 Minnesota Mining And Manufacturing Company Light transmissive, electrically-conductive, oxide film and methods of production
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
FR2743193B1 (fr) 1996-01-02 1998-04-30 Univ Neuchatel Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede
JP4510186B2 (ja) * 1999-09-28 2010-07-21 株式会社アルバック カーボン薄膜製造方法

Also Published As

Publication number Publication date
WO2003021690A3 (fr) 2003-11-06
US7390731B2 (en) 2008-06-24
JP2005501182A (ja) 2005-01-13
AU2002322952A1 (en) 2003-03-18
ES2274069T3 (es) 2007-05-16
WO2003021690A2 (fr) 2003-03-13
EP1421630A2 (de) 2004-05-26
US20040235286A1 (en) 2004-11-25
CN1326255C (zh) 2007-07-11
EP1421630B1 (de) 2006-10-18
CN1550045A (zh) 2004-11-24
EP1289025A1 (de) 2003-03-05
DE60215523T2 (de) 2007-06-21
JP4491233B2 (ja) 2010-06-30

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