DE3650379D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number: DE3650379D1
Authority: DE; Germany
Prior art keywords: semiconductor laser; laser device; semiconductor; laser
Prior art date: 1985-06-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE3650379T

Other languages

English (en)

Other versions

DE3650379T2 (de

Inventor

Osamu Yamamoto

Hiroshi Hayashi

Saburo Yamamoto

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-06-14

Filing date

1986-06-12

Publication date

1995-10-05

1986-06-12 Application filed by Sharp Corp filed Critical Sharp Corp

1995-10-05 Publication of DE3650379D1 publication Critical patent/DE3650379D1/de

1996-03-21 Application granted granted Critical

1996-03-21 Publication of DE3650379T2 publication Critical patent/DE3650379T2/de

2006-06-13 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

DE3650379T 1985-06-14 1986-06-12 Halbleiterlaservorrichtung. Expired - Fee Related DE3650379T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60130559A JPH0766995B2 (ja)	1985-06-14	1985-06-14	半導体レーザ装置

Publications (2)

Publication Number	Publication Date
DE3650379D1 true DE3650379D1 (de)	1995-10-05
DE3650379T2 DE3650379T2 (de)	1996-03-21

Family

ID=15037153

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE3650379T Expired - Fee Related DE3650379T2 (de)	1985-06-14	1986-06-12	Halbleiterlaservorrichtung.

Country Status (4)

Country	Link
US (1)	US4803695A (de)
EP (1)	EP0206661B1 (de)
JP (1)	JPH0766995B2 (de)
DE (1)	DE3650379T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63213389A (ja) *	1987-02-27	1988-09-06	Sharp Corp	半導体レ−ザ装置
JP2663437B2 (ja) *	1987-05-27	1997-10-15	ソニー株式会社	半導体レーザ装置
EP0308603A1 (de) *	1987-09-25	1989-03-29	Siemens Aktiengesellschaft	Dynamisch einmodiger Lasersender
JPH02125486A (ja) *	1988-06-20	1990-05-14	Sanyo Electric Co Ltd	半導体レーザ装置
JPH0277186A (ja) *	1988-06-20	1990-03-16	Sanyo Electric Co Ltd	半導体レーザ装置及び受光素子
DE3834929A1 (de) *	1988-10-13	1990-04-19	Siemens Ag	Wellenleiterreflektor fuer optoelektronische anwendungen und laser
DE3943470A1 (de) *	1989-05-29	1990-12-13	Rainer Thiessen	Gegenstands-naeherungs und troepfchendetektor
DE3917388C1 (de) *	1989-05-29	1990-11-29	Rainer 8000 Muenchen De Thiessen
JPH04188022A (ja) *	1990-11-22	1992-07-06	Olympus Optical Co Ltd	変位検出装置
JP2744143B2 (ja) *	1991-01-16	1998-04-28	株式会社東芝	半導体発光素子及びその製造方法
US5554882A (en) *	1993-11-05	1996-09-10	The Boeing Company	Integrated trigger injector for avalanche semiconductor switch devices
DE19741122C2 (de) *	1997-09-12	2003-09-25	Forschungsverbund Berlin Ev	Anordnung zur Vermessung und Strukturierung (Nahfeldanordnung)
JP4784966B2 (ja) *	2003-11-18	2011-10-05	シャープ株式会社	半導体レーザ装置および照明装置
US7209499B2 (en) *	2004-09-22	2007-04-24	Corning Incorporated	Mode-selective frequency tuning system
JP2008288527A (ja) *	2007-05-21	2008-11-27	Rohm Co Ltd	レーザ発光装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1301750B (de) *	1965-11-10	1969-08-21	Wasagchemie Ag	Wettersprengstoff mit verbessertem Deflagrationsverhalten
GB1463233A (en) *	1975-02-13	1977-02-02	Standard Telephones Cables Ltd	Injection laser assembly
JPS5414180A (en) *	1977-07-05	1979-02-02	Canon Inc	Semiconductor laser unit
DE2737345C2 (de) *	1976-08-20	1991-07-25	Canon K.K., Tokio/Tokyo	Halbleiterlaser-Vorrichtung mit einem Peltier-Element
JPS55141773A (en) *	1979-04-20	1980-11-05	Kokusai Denshin Denwa Co Ltd <Kdd>	Semiconductor laser element
US4375067A (en) *	1979-05-08	1983-02-22	Canon Kabushiki Kaisha	Semiconductor laser device having a stabilized output beam
JPS58111391A (ja) *	1981-12-25	1983-07-02	Hitachi Ltd	半導体レ−ザ装置
GB2115217B (en) *	1982-02-09	1986-04-03	Standard Telephones Cables Ltd	Semiconductor lasers
JPS59205784A (ja) *	1983-05-09	1984-11-21	Matsushita Electric Ind Co Ltd	光帰還型半導体レ−ザ装置
US4675873A (en) *	1984-09-28	1987-06-23	Bell Communications Research, Inc.	Single mode injection laser structure
DE3442188A1 (de) *	1984-11-17	1986-05-28	ANT Nachrichtentechnik GmbH, 7150 Backnang	Anordnung zum stabilisieren und regeln eines halbleiterlasers
JP3991393B2 (ja) *	1997-06-11	2007-10-17	住友電気工業株式会社	化合物半導体の製造装置

1985
- 1985-06-14 JP JP60130559A patent/JPH0766995B2/ja not_active Expired - Fee Related
1986
- 1986-06-12 DE DE3650379T patent/DE3650379T2/de not_active Expired - Fee Related
- 1986-06-12 EP EP86304512A patent/EP0206661B1/de not_active Expired - Lifetime
- 1986-06-13 US US06/873,991 patent/US4803695A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0206661B1 (de)	1995-08-30
JPH0766995B2 (ja)	1995-07-19
EP0206661A2 (de)	1986-12-30
US4803695A (en)	1989-02-07
DE3650379T2 (de)	1996-03-21
JPS61288479A (ja)	1986-12-18
EP0206661A3 (en)	1988-01-20

Publication	Publication Date	Title
DE3687329D1 (de)	1993-02-04	Halbleiterlaser-vorrichtung.
DE3584702D1 (de)	1992-01-02	Halbleiterlaservorrichtung.
DE3584330D1 (de)	1991-11-14	Halbleiterlaservorrichtung.
DE3787769D1 (de)	1993-11-18	Halbleiterlaservorrichtung.
DE3676867D1 (de)	1991-02-21	Halbleiterlaser.
DE3650012D1 (de)	1994-09-08	Halbleitervorrichtung.
DE3685466D1 (de)	1992-07-02	Halbleiterlaser-vorrichtung.
NL189326C (nl)	1993-03-01	Halfgeleiderinrichting.
DE3681799D1 (de)	1991-11-14	Halbleiter-bearbeitungseinrichtung.
DE3587748D1 (de)	1994-03-24	Halbleiterlaseranordnung.
DE3750995D1 (de)	1995-03-02	Halbleiterlaservorrichtung.
DE3786339D1 (de)	1993-07-29	Halbleiterlaservorrichtung.
DE3688064D1 (de)	1993-04-22	Halbleitervorrichtung.
DE3674959D1 (de)	1990-11-22	Halbleiterlaser.
NL194185B (nl)	2001-04-02	Halfgeleiderlaserinrichting.
DE3687102D1 (de)	1992-12-17	Halbleiterlaser.
DE3688002D1 (de)	1993-04-22	Halbleiter-laser.
DE3680223D1 (de)	1991-08-22	Halbleiterlaser-vorrichtung.
DE3688943D1 (de)	1993-10-07	Halbleiterlaservorrichtung.
DE3789832D1 (de)	1994-06-23	Halbleiterlaser-Vorrichtung.
DE3650379D1 (de)	1995-10-05	Halbleiterlaservorrichtung.
DE3776186D1 (de)	1992-03-05	Halbleiterlaser-vorrichtung.
DE3688017D1 (de)	1993-04-22	Halbleiterlaser-vorrichtung.
DE3668099D1 (de)	1990-02-08	Laserhalbleiteranordnung.
DE3581076D1 (de)	1991-02-07	Halbleiterlaser-vorrichtungen.

Legal Events

Date	Code	Title	Description
1996-09-26	8364	No opposition during term of opposition
1997-03-20	8328	Change in the person/name/address of the agent	Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN
2006-04-13	8339	Ceased/non-payment of the annual fee