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DE3584330D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3584330D1
DE3584330D1 DE8585109337T DE3584330T DE3584330D1 DE 3584330 D1 DE3584330 D1 DE 3584330D1 DE 8585109337 T DE8585109337 T DE 8585109337T DE 3584330 T DE3584330 T DE 3584330T DE 3584330 D1 DE3584330 D1 DE 3584330D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585109337T
Other languages
English (en)
Inventor
Masayuki Yamaguchi
Ikuo Mito
Mitsuhiro Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15611684A external-priority patent/JPS6134988A/ja
Priority claimed from JP20020884A external-priority patent/JPH0656905B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3584330D1 publication Critical patent/DE3584330D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8585109337T 1984-07-26 1985-07-25 Halbleiterlaservorrichtung. Expired - Lifetime DE3584330D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15611684A JPS6134988A (ja) 1984-07-26 1984-07-26 半導体レ−ザ
JP20020884A JPH0656905B2 (ja) 1984-09-25 1984-09-25 光ヘテロダイン受信装置

Publications (1)

Publication Number Publication Date
DE3584330D1 true DE3584330D1 (de) 1991-11-14

Family

ID=26483944

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585109337T Expired - Lifetime DE3584330D1 (de) 1984-07-26 1985-07-25 Halbleiterlaservorrichtung.

Country Status (4)

Country Link
US (1) US4751710A (de)
EP (1) EP0169567B1 (de)
CA (1) CA1253946A (de)
DE (1) DE3584330D1 (de)

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US4905057A (en) * 1985-12-18 1990-02-27 Hitachi, Ltd. Semiconductor devices
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
GB2197531B (en) * 1986-11-08 1991-02-06 Stc Plc Distributed feedback laser
GB8629873D0 (en) * 1986-12-15 1987-01-28 British Telecomm Optical signal processing device
GB8629871D0 (en) * 1986-12-15 1987-01-28 British Telecomm Optical switch
JPS63244694A (ja) * 1987-03-30 1988-10-12 Sony Corp 分布帰還形半導体レ−ザ
JPS649682A (en) * 1987-07-01 1989-01-12 Nec Corp Distributed feedback semiconductor laser
JPH0831653B2 (ja) * 1987-07-21 1996-03-27 国際電信電話株式会社 半導体レ−ザ
EP0309744A3 (de) * 1987-09-29 1989-06-28 Siemens Aktiengesellschaft Anordnung mit einem flächig sich erstreckenden Dünnfilmwellenleiter
DE3737191A1 (de) * 1987-11-03 1989-05-24 Fraunhofer Ges Forschung Halbleiterdiodenlaser
JP2659199B2 (ja) * 1987-11-11 1997-09-30 日本電気株式会社 可変波長フィルタ
JP2692913B2 (ja) * 1987-12-19 1997-12-17 株式会社東芝 グレーティング結合型表面発光レーザ素子およびその変調方法
NL8803080A (nl) * 1988-12-16 1990-07-16 Philips Nv Verstembare halfgeleiderdiodelaser met verdeelde reflectie en vervaardigingswijze van een dergelijke halfgeleiderdiodelaser.
US4908833A (en) * 1989-01-27 1990-03-13 American Telephone And Telegraph Company Distributed feedback laser for frequency modulated communication systems
US4905253A (en) * 1989-01-27 1990-02-27 American Telephone And Telegraph Company Distributed Bragg reflector laser for frequency modulated communication systems
US5070509A (en) * 1990-08-09 1991-12-03 Eastman Kodak Company Surface emitting, low threshold (SELTH) laser diode
US5126803A (en) * 1991-03-11 1992-06-30 The Boeing Company Broadband quantum well LED
US5164955A (en) * 1991-06-17 1992-11-17 Eastman Kodak Company Laser diode with volume refractive index grating
JP3381073B2 (ja) * 1992-09-28 2003-02-24 ソニー株式会社 半導体レーザ装置とその製造方法
JP2536714B2 (ja) * 1993-03-03 1996-09-18 日本電気株式会社 光変調器集積型多重量子井戸構造半導体レ―ザ素子
JPH08255891A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 光集積回路装置及びその駆動方法
US5991061A (en) * 1997-10-20 1999-11-23 Lucent Technologies Inc. Laser transmitter for reduced SBS
US6347107B1 (en) * 1998-07-15 2002-02-12 Eastman Kodak Company System and method of improving intensity control of laser diodes using back facet photodiode
US6408014B1 (en) * 1999-07-07 2002-06-18 Agere Systems Guardian Corp. Apparatus and method for stabilizing the frequency of a light source
US6477194B1 (en) * 1999-11-15 2002-11-05 Agere Systems Guardian Corp. Low temperature distributed feedback laser with loss grating and method
US6331908B1 (en) 1999-11-22 2001-12-18 Lucent Technologies Inc. Optical system for reduced SBS
US6671425B1 (en) 2002-06-18 2003-12-30 Celight Method and system for acoustically tuning a light source
US6865209B2 (en) * 2003-02-24 2005-03-08 Quintessence Photonics Corporation Laser diode with a spatially varying electrostatic field frequency converter
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
JP5443356B2 (ja) * 2008-07-10 2014-03-19 株式会社東芝 半導体レーザ装置
EP2904380A4 (de) 2012-10-25 2016-06-08 Univ Colorado State Res Found Verbesserter optischer multianalytsensor
US10608412B2 (en) * 2017-06-19 2020-03-31 Sumitomo Electric Industries, Ltd. Quantum cascade laser, light emitting apparatus
JP6939120B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6939119B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6911567B2 (ja) 2017-06-22 2021-07-28 住友電気工業株式会社 量子カスケード半導体レーザ
US10476235B2 (en) * 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10476237B2 (en) * 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10404038B2 (en) * 2017-06-22 2019-09-03 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10277005B2 (en) * 2017-09-13 2019-04-30 Palo Alto Research Center Incorporated Pumped edge emitters with metallic coatings
CN111344917B (zh) * 2017-12-15 2023-09-12 株式会社堀场制作所 半导体激光器、驱动控制装置和半导体激光器的控制方法
US11605930B2 (en) 2019-03-22 2023-03-14 Rockley Photonics Limited Distributed feedback laser

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DE2559265C2 (de) * 1975-12-31 1982-06-09 Tokyo Institute of Technology, Tokyo Halbleiterlaser
FR2426922A1 (fr) * 1978-05-26 1979-12-21 Thomson Csf Structure optique compacte a source integree
US4360921A (en) * 1980-09-17 1982-11-23 Xerox Corporation Monolithic laser scanning device
JPS5844785A (ja) * 1981-08-27 1983-03-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
CA1196078A (en) * 1981-12-07 1985-10-29 Masafumi Seki Double channel planar buried heterostructure laser with periodic structure formed in guide layer
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
DE3231492A1 (de) * 1982-08-25 1984-03-01 ANT Nachrichtentechnik GmbH, 7150 Backnang Integrierte mikro-optische vorrichtung
DE3379442D1 (en) * 1982-10-12 1989-04-20 Nec Corp Double heterostructure semiconductor laser with periodic structure formed in guide layer
JPS59205787A (ja) * 1983-05-09 1984-11-21 Nec Corp 単一軸モ−ド半導体レ−ザ
JPS6057692A (ja) * 1983-09-08 1985-04-03 Nec Corp 分布ブラッグ反射型半導体レ−ザ
JPS6066490A (ja) * 1983-09-21 1985-04-16 Nec Corp 単一軸モ−ド半導体レ−ザ

Also Published As

Publication number Publication date
EP0169567B1 (de) 1991-10-09
CA1253946A (en) 1989-05-09
EP0169567A2 (de) 1986-01-29
US4751710A (en) 1988-06-14
EP0169567A3 (en) 1988-09-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition