DE1694504B2 - Process for the epitaxial growth of silicon carbide - Google Patents

Description

The invention relates to a method for epitaxial pitching Growth of silicon carbide on a knalline seed crystal of silicon carbide by pyrolytic Decomposition of gases containing silicon and carbon, being a chlorine-free silane: and allphatic Hydrocarbon-containing gas is used, according to patent 1,467,085.

In the process described in the main patent 1,467,085, the reaction vessel is a mixture of gaseous. Substances containing silicon and hydrocarbons are added under normal pressure by means of a flowing inert tear gas. This process has the advantage over the older process in which silicon _{tetrachloride (SiCl 4} ) and carbon tetrachloride (CCl ₄ ) are reduced with hydrogen

will have various advantages. The most important advantage is that the hydrogen as well as to damaged by pyrolytic decomposition

15 The invention is based on the exemplary embodiment shown diagrammatically in the figure.

^SC In reaction vessel 1, which is made of quartz, is. * _{G a} _ _nit _ _o the tantalum block 2 arranged. On aer γ _ΗίΛ1οο ΐς 2 lies the monocrystalline SiIiaem, ¹ J ₀ ^ ₆ J _{11141 on the} surface in the epi-

»5 ° H ° '^ _a monocrystalline layer applied _Bik ^ ^ _{thus also the germ4}

30 J ^ _{en miuds the} induction coil 5 on a tem-

_npr ot, ir heated to about 1400 ° C. P ^e ™ ^u ™ _{tube 6} ^ _n J _e in gas mixture, consisting of uur _{and p {} ^ _ώ ^

the end. Μοηω · . ^ _{The unniiUelbar above the}

^ " ¹ JJJ * of _the ⁵ _{SiC heated to about 40} 0 ° C

"ff"". _siHziumC arbid and hydrogen under epi-Keims 4 ^ m _{of SiC on the Keim zer} .

tactiscnem / λ

camouflage. acting gas mixtures are through

^D ™ S Ld with the rfW through the pipe 6, for example, is used for

Phosphorus hydride phosphorus

Ä5! XÄ1 ^^^ he.

The targeted growth rate of the crystalline layer is, however, not significantly higher than that obtained with the older method. Increasing the wax would tumsgeschwindigkeit but very desirable because, for example with slow growth of the ski ducks because of occurring Diffusionserschemungen no pn junctions m the desired Sharp ER- ₅ c During dr

«Nem

g des Aufw ^ hspn »- ^ _the ^g _{suction line 8} ^ ₆ .

_Rea ktionsgefäß an under-

_of ashes a torr and,. _{This releases the gases}

_{gt> without} the use

can be set precisely during the growth process in the reaction vessel.

1 sheet of drawings

Claims (2)

Patent claims: 1 Process for the epitaxial growth of silicon carbide on a crystalline seed crystal from silicon carbide by pyrolytic decomposition of silicon and hydrocarbons containing gases, with a chlorine-free biiane and gas containing aliphatic hydrocarbons is used, according to patent 146 / υ »3, thereby characterized in that a negative pressure in the reaction vessel during the growth process is maintained, which is between one Torr and one hundredth Torr. ^ 2. The method according to claim 1, dadurcu characterized that the rate of growth is controlled by the size of the petticoat. a negative pressure between one torr and one hundredth of a torr is maintained. By ,. _ACTION has been able to achieve about ten times higher growth rate than the previous you ^ ^. When growing up poly- a V ^ _sm d _Sic example, even wax "* _{on 1O} o μ been achieved per minute. En * JJJr _advantage of the method is that w ^ _Hydrocarbons rstoffe and Dotieui _{entha ffe] te} the gases through the vacuum ίο ε _Rea ktionsraum be sucked. This kön- ^ inert carrier gases _{used so far,} the ^ The substances used must be highly pure, ^ ^^ ^ make Venabia more expensive, _{no longer apply.} advantageous embodiment of the inventive _Verfanren s is that the Wachsrumsge- _ "^ ^ _{Gr" SSE °} ge _{underpressure}