CN216792774U - Low-power-supply-voltage reference circuit with low temperature drift coefficient - Google Patents
Low-power-supply-voltage reference circuit with low temperature drift coefficient Download PDFInfo
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- CN216792774U CN216792774U CN202123418539.3U CN202123418539U CN216792774U CN 216792774 U CN216792774 U CN 216792774U CN 202123418539 U CN202123418539 U CN 202123418539U CN 216792774 U CN216792774 U CN 216792774U
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Abstract
The utility model relates to a low power supply voltage reference circuit with low temperature drift coefficient, which relates to the integrated circuit technology, the utility model comprises a low power supply voltage band-gap reference circuit, and also comprises: a grid electrode of the third MOS tube is connected with the output end of the second operational amplifier, a source electrode of the third MOS tube is connected with high level, a drain electrode of the third MOS tube is grounded through a third resistor R3, and the drain electrode of the third MOS tube is also connected with a second input end of the second operational amplifier; a grid electrode of the fourth MOS transistor is connected with the output end of the second operational amplifier, a source electrode of the fourth MOS transistor is connected with a high level, a drain electrode of the fourth MOS transistor is grounded through a third transistor, the third transistor is a PNP transistor, and a base electrode of the fourth MOS transistor is connected with the output end of the fifth MOS transistor; and the grid electrode of the sixth MOS tube is connected with the output end of the second operational amplifier, the source electrode of the sixth MOS tube is connected with the high level, and the drain electrode of the sixth MOS tube is connected with the output end of the fifth MOS tube. The utility model can provide a stable bias voltage for the circuit.
Description
Technical Field
The utility model relates to the integrated circuit technology, in particular to the CMOS band-gap reference voltage source technology.
Background
The electrical characteristics of the semiconductor device change with the change of the environmental temperature, and for a conventional voltage reference, the output voltage fluctuates with the change of the temperature, and when the fluctuation of the output is large, the stability of the bias voltage of the next stage circuit is affected, and in some cases, the allowable input voltage range of the next stage circuit may even be exceeded. Therefore, a voltage source that remains stable (with a small fluctuation range) over a certain temperature range is extremely important for circuit design.
The traditional design of the band-gap reference voltage is to use the emitter junction voltage V of a bipolar transistor with a negative temperature coefficientBEAnd a Δ V having a positive temperature coefficientBEThe linear superposition is generally called first-order temperature compensation according to a certain proportion, after compensation, a voltage with a temperature coefficient of approximately zero in a specific temperature range can be obtained, the voltage is about 1.2V, the voltage has fluctuation in other temperature ranges outside the specific temperature range, and the typical theoretical value of the temperature coefficient can reach 50 ppm/DEG C, as shown in figure 1.
With the continuous development of deep submicron integrated circuit technology, the integrated circuit is pursuing miniaturization of devices, so the power supply voltage of the circuit is lower and lower, and some of the power supply voltage is even lower than 1V. The conventional bandgap reference circuit cannot meet the requirements of many circuits, so that the bandgap reference circuit capable of operating at a voltage of 1V needs to be designed.
FIG. 2 shows a mainstream low power supply voltage bandgap reference circuit, which mainly includes an operational amplifier A and two NPN transistors Q1And Q24 resistors R1、R2、R3Three PMOS tubes M1、M2、M3. Wherein Q1Has an emitter area of Q2N times of (M)1、M2Tubes of uniform size, M3Has a size of M1、M2M times the tube. The virtual short of the operational amplifier a makes the voltage at A, B two points approximately equal, so the collector currents of the two bipolar transistors are equal, and are expressed as:
I1＝ΔVBE/R1＝VTlnN/R1
resistance R2The current flowing in (1) is:
I2＝VBE1/R2
the output reference voltage is therefore expressed as:
VBG＝M·R3·(I1+I2)＝M·R3·(VT·lnN·R2/R1+VBE1/R2)
selecting the appropriate M, N, R1,R2And R3A low bandgap reference voltage can be obtained.
As mentioned above, the first-order compensated low-voltage bandgap reference also has a large temperature drift coefficient, and is not suitable for a system with a high requirement on voltage precision. The reason for the larger temperature drift coefficient is VBEIs a nonlinear function of temperature, and V is needed to obtain a high-precision voltage reference of a ground temperature coefficientBEThe non-linearity of (2) performs high order compensation.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a low power supply voltage reference circuit with high-order temperature compensation characteristics.
The technical scheme adopted by the utility model for solving the technical problems is that,
a low supply voltage bandgap reference circuit with a low temperature drift coefficient, comprising a low supply voltage bandgap reference circuit, the low supply voltage bandgap reference circuit comprising:
the common-gate common-source MOS comprises a first MOS tube, a second MOS tube, a fifth MOS tube, a first transistor, a second transistor and a first operational amplifier, wherein the first MOS tube and the first transistor are connected to a first input end of the first operational amplifier;
it is characterized by also comprising:
a grid electrode of the third MOS tube is connected with the output end of the second operational amplifier, a source electrode of the third MOS tube is connected with a high level, a drain electrode of the third MOS tube is grounded through a third resistor R3, and the drain electrode of the third MOS tube is also connected with a second input end of the second operational amplifier;
a grid electrode of the fourth MOS tube is connected with the output end of the second operational amplifier, a source electrode of the fourth MOS tube is connected with a high level, a drain electrode of the fourth MOS tube is grounded through the third transistor, the third transistor is a PNP tube, and a base electrode of the fourth MOS tube is connected with the output end of the fifth MOS tube;
and the grid electrode of the sixth MOS tube is connected with the output end of the second operational amplifier, the source electrode of the sixth MOS tube is connected with a high level, and the drain electrode of the sixth MOS tube is connected with the output end of the fifth MOS tube.
The utility model can be applied to various circuits such as high-precision simulation, digital/analog mixing and the like, and can control the fluctuation range of the output voltage along with the temperature within a small range through a simple circuit structure so as to provide a stable bias voltage for the circuit. The circuit structure is simple, compared with a mainstream low power supply voltage band gap reference circuit, the number of the added devices on the circuit is limited, and the power consumption is low; the band gap reference precision of the low power supply voltage after high-order temperature compensation is higher, and the theoretical value of the temperature coefficient is less than or equal to 20 ppm/DEG C.
Drawings
FIG. 1 is a schematic diagram of a bandgap reference voltage after first-order temperature compensation;
FIG. 2 is a mainstream low supply voltage bandgap reference circuit diagram;
FIG. 3 is a circuit diagram of the present invention;
FIG. 4 is a schematic diagram of a first order temperature compensated bandgap reference obtained by adjusting the ratio of R1 and R2;
FIG. 5 is a schematic diagram of a low supply voltage bandgap reference after high order temperature compensation.
Detailed Description
The utility model designs a low power supply voltage reference circuit with a low temperature drift coefficient, a low power supply voltage reference source is obtained on the basis of first-order temperature compensation, high-order temperature compensation is carried out on a region with a larger temperature drift coefficient of the reference source, and a low power supply voltage reference with a low temperature drift coefficient can be obtained after two times of compensation.
The amplification of a bipolar transistor β is an exponentially increasing function of temperature: β. varies.. exp (-1/T). Applying a CTAT current ICTATInjecting into the emitter of PNP transistor to obtain a current I at the baseCTAT/β，ICTATThe/beta current is a high-order function of temperature (the current is sharply reduced along with the temperature change and is approximately reduced to zero in a certain temperature range), the current is converted into voltage according to a certain proportion and then is superposed on the low power supply voltage band gap reference voltage after first-order compensation, and then high-order compensation of the low temperature section of the low power supply voltage band gap reference can be realized.
Referring to fig. 3, the low supply voltage reference circuit with low temperature drift coefficient of the present invention includes a low supply voltage bandgap reference circuit, which includes:
first MOS transistor M of common gate common source1A second MOS transistor M2And a fifth MOS transistor M5And a first transistor Q1A second transistor Q2And a first operational amplifier A1The first MOS transistor M1And a first transistor Q1Is connected to a first operational amplifier A1First input terminal of (1), second MOS transistor M2Is connected to a first operational amplifier A1Second input terminal of (1), fifth MOS transistor M5The output end of the first resistor is grounded through a second resistor;
further comprising:
third MOS transistor M3Its grid is connected with output end of second operational amplifier A2, its source is connected with high level, its drain is passed through third resistor R3The drain electrode is connected with a second operational amplifier A2A second input terminal of;
fourth MOS transistor M4The grid of the first operational amplifier is connected with a second operational amplifier A2Its source is connected with high level, and its drain electrode is passed through third transistor Q3Grounded, third transistor Q3The base electrode of the PNP transistor is connected with the output end of the fifth MOS transistor;
sixth MOS transistor M6The grid of the first operational amplifier is connected with a second operational amplifier A2The source of the output end is connected with a high level, and the drain is connected with a fifth MOS tube M5To the output terminal of (a).
The devices, such as the first MOS transistor M, are abbreviated below with the reference numerals of FIG. 31Abbreviated as M1The same applies otherwise.
The low power supply voltage reference circuit with low temperature drift coefficient provided by the utility model mainly obtains the reference voltage of low power supply voltage with low temperature drift coefficient by carrying out high-order temperature compensation on the main stream low power supply voltage band gap reference circuit, and the basic circuit diagram is shown in figure 3. Operational amplifier A1、A2PMOS transistor M1、M2、M3、M5、M6(wherein M is1、M2Same size, M5Is of size M1M times of (M)6Is of size M3K times) of) resistance R1、R2、R3And a bipolar transistor Q1、Q2A first-order temperature compensation structure of the low power supply voltage band gap reference is formed; operational amplifier A2PMOS transistor M4(wherein M is4Is of size M3C times) and a bipolar transistor Q3A high-order temperature compensation structure is formed, and the current of the high-order temperature compensation branch circuit is superposed on the second resistor R2In this way, a low supply voltage reference with a low temperature drift coefficient can be obtained. And m, k and c are preset coefficients.
The principle of high-order temperature compensation is as follows:
the curve in fig. 1 is a first order temperature compensated low supply voltage bandgap reference expressed as
VBG＝R2·(m·IPTAT+k·ICTAT)＝m·VT·lnN·R2/R1+k·VBE,Q1·R2/R3
From the foregoing analysis, it can be known that the temperature coefficient of the low power supply voltage reference after the first-order temperature compensation is zero only in a specific temperature range, that is, the curve in fig. 1 is relatively flat in the middle temperature range, and has large fluctuation in the low temperature range and the high temperature range, and R can be changed1And R3To control the flatness of the curve over a particular temperature range.
Where R in the circuit of FIG. 3 is adjusted1And R3A value of (3), increasing R3/R1I.e. increase VBGMiddle delta VBEThe obtained first-order temperature compensated low power supply voltage band gap reference curve is shown in fig. 4, and the curve of the low power supply voltage band gap reference in fig. 4 changing with temperature is relatively straight and has small fluctuation at a high temperature section.
In FIG. 3, an operational amplifier A2The two input ends of the resistor R are virtually short to enable the voltages of the points A and C to be approximately equal, and the resistor R is connected with the output end of the resistor R3A pressure drop over is approximately VBE,Q1Will VBE,Q1Linearized to give ICTATCurrent: i isCTAT＝VBE,Q1/R3Through M3And M4Pipe is connected withIn a fixed ratioCTATCurrent mirror to Q3Collector of tube, from Q3High-order temperature compensation branch current c.I flowing out of tube baseCTATA/beta superposition to the resistance R2Thereby obtaining a reference voltage with low temperature drift coefficient
VBG,compensation＝m·VT·lnN·R2/R1+k·VBE,Q1·R2/R3+c.ICTAT/β
The low supply voltage bandgap reference curve after high-order temperature compensation is shown in fig. 5.
Claims (1)
1. A low supply voltage reference circuit with a low temperature drift coefficient, comprising a low supply voltage bandgap reference circuit, said low supply voltage bandgap reference circuit comprising:
first MOS transistor (M) of common gate common source1) And a second MOS transistor (M)2) And a fifth MOS transistor (M)5) And a first transistor (Q)1) A second transistor (Q)2) And a first operational amplifier (A)1) First MOS transistor (M)1) And a first transistor (Q)1) Is connected to the first operational amplifier (A)1) First input terminal of (1), second MOS transistor (M)2) Is connected to the first operational amplifier (A)1) Second input terminal of (1), fifth MOS transistor (M)5) The output end of the first resistor is grounded through a second resistor;
it is characterized by also comprising:
third MOS transistor (M)3) Its grid is connected with output end of second operational amplifier (A2), its source is connected with high level, and its drain is passed through third resistor R3) Grounded, and the drain is connected with a second operational amplifier (A)2) A second input terminal of;
fourth MOS transistor (M)4) The grid of the first operational amplifier is connected with the first operational amplifier (A)2) Its source is connected to high level, and its drain passes through the third transistor (Q)3) Grounded, third transistor (Q)3) The base electrode of the PNP transistor is connected with the output end of the fifth MOS transistor;
sixth MOS transistor (M)6) The grid of the first operational amplifier is connected with the first operational amplifier (A)2) The source of the output end is connected with high level, the drain is connected with a fifth MOS tube (M)5) To the output terminal of (a).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202123418539.3U CN216792774U (en) | 2021-12-31 | 2021-12-31 | Low-power-supply-voltage reference circuit with low temperature drift coefficient |
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| CN202123418539.3U CN216792774U (en) | 2021-12-31 | 2021-12-31 | Low-power-supply-voltage reference circuit with low temperature drift coefficient |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115437442A (en) * | 2022-08-17 | 2022-12-06 | 成都华微电子科技股份有限公司 | High-order compensation band gap voltage reference circuit |
| CN115586809A (en) * | 2022-10-26 | 2023-01-10 | 南京博芯电子技术有限公司 | Exponential type temperature compensation band gap reference voltage source and compensation method thereof |
-
2021
- 2021-12-31 CN CN202123418539.3U patent/CN216792774U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115437442A (en) * | 2022-08-17 | 2022-12-06 | 成都华微电子科技股份有限公司 | High-order compensation band gap voltage reference circuit |
| CN115437442B (en) * | 2022-08-17 | 2024-03-19 | 成都华微电子科技股份有限公司 | High-order compensation band gap voltage reference circuit |
| CN115586809A (en) * | 2022-10-26 | 2023-01-10 | 南京博芯电子技术有限公司 | Exponential type temperature compensation band gap reference voltage source and compensation method thereof |
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