CN203733842U

CN203733842U - LED capable of improving light-emitting rate

Info

Publication number: CN203733842U
Application number: CN201320846635.4U
Authority: CN
Inventors: 何天贤; 涂滔
Original assignee: GUANGZHOU WENDA ELECTRONICS Co Ltd
Current assignee: GUANGZHOU WENDA ELECTRONICS Co Ltd
Priority date: 2013-12-20
Filing date: 2013-12-20
Publication date: 2014-07-23
Anticipated expiration: 2023-12-20

Abstract

The utility model discloses an LED capable of improving light-emitting rate comprising a substrate and a light cup. The light cup is disposed on the substrate. An LED chip disposed on the substrate is disposed in the light cup, and a first silica gel layer used for covering the LED chip is disposed in the light cup. An interlayer phosphor is disposed on the first silica gel layer. A second silica gel layer having high refractive index inorganic nano particles is disposed on the interlayer phosphor. The LED provided by the utility model is capable of improving the light-emitting rate and prolonging the service lifetime of the phosphor.

Description

A kind of LED that can improve light emission rate

Technical field

The utility model relates to LED.

Background technology

The packaging technology of white light LEDs has formed some fixing patterns at present, the white-light LED encapsulation technique of most of producer be all by fluorescent material with join arogel and evenly mix, then by the production technology designing, directly point completes a glue process on the chip that welds electrode connecting line.This packaged type has passed through development and the application of long period, manually and automatic producing device all very ripe, substantially all adopt this packaging technology to manufacture white light LEDs so present stage LED encapsulates manufacturer.But because this production technology itself exists some defects, cause the product of producing also to have some problem.

All directly to put at chip surface after fluorescent material is mixed with glue because realize the technique of white light in existing LED encapsulation technology, this has amount of heat when in use LED chip is lasting luminous and produces, and directly the fluorescent material of contact chip also can heat up and become the hottest part because being heated.High temperature will directly cause the quantum efficiency of fluorescent material decline, produce light decay and affect life-span of LED light source.Fluorescent material is heated and also can makes chromaticity coordinates produce skew except producing light decay, makes the colourity variation of same batch of light source inconsistent, causes product entirety light quality to decline.

In order to solve the problems of the technologies described above, existing appearance arranges layer of silica gel between chip and phosphor gel, as at application number being double-layer glue structure LED light source and the manufacture method that discloses a kind of surface coarsening in the 201210172595.X patent documentation that openly day is 2012.10.3, and specifically disclose between chip and phosphor powder layer and be provided with layer of silica gel, its effect is that phosphor powder layer and chip are separated, and prevents from affecting phosphor powder layer because of the temperature of chip.Phosphor powder layer because of LED temperature problem solved, but phosphor powder layer is outside exposed, and also there is to impact in the life-span of fluorescent material, and for LED, also very important of light extraction efficiency.

Summary of the invention

In order to improve light extraction efficiency, improve the life-span of fluorescent powder, the utility model provides a kind of LED that can improve light emission rate.

For achieving the above object, a kind of LED that can improve light emission rate, comprises substrate and light cup, light cup is located on substrate, in light cup, be provided with the LED chip being installed on substrate, in light cup, be provided with the first layer of silica gel that covers LED chip, in the first layer of silica gel, be provided with intermediate layer fluorophor; On the fluorophor of intermediate layer, be provided with the second layer of silica gel containing high index of refraction inorganic nano-particle.

Said structure, owing to being provided with the layer of silica gel that contains high refractive index nanoparticles on the fluorophor of intermediate layer, being equivalent to and having increased an optical lens; further improve the light emission rate of LED; in addition, the second layer of silica gel can also prevent that fluorophor from exposing, and has played the effect of protection fluorophor.

As improvement, in the second layer of silica gel, be provided with sawtooth, the degree of depth of sawtooth is 0-10 μ m, the wedge angle of sawtooth is 0-45 °.The sawtooth of this parameter, total reflection phenomenon is minimum, can further improve light extraction efficiency.

As improvement, the first layer of silica gel is the first layer of silica gel containing high index of refraction inorganic nano-particle.

Brief description of the drawings

Fig. 1 is structural representation of the present utility model.

Embodiment

Below in conjunction with the drawings and specific embodiments, the utility model is further elaborated.

The LED that as shown in Figure 1, can improve light emission rate comprises substrate 1, light cup 2, LED chip 3, gold thread 4, the first layer of silica gel 5, intermediate layer fluorophor 6 and the second layer of silica gel 7 containing high index of refraction inorganic nano-particle containing high index of refraction inorganic nano-particle.

Light cup 1 is arranged on substrate 1, on the surface of light cup 2, is provided with reflector.

LED chip 3 is arranged on substrate 1 and is positioned at light cup 2; Gold thread 4 couples together the circuit board of substrate and LED chip 3; LED chip 3 is ultraviolet light chip, blue chip, and ultraviolet light chip emission wavelength is 380～435 nm, and blue chip emission wavelength is 435～500 nm.

The first layer of silica gel 5 containing high index of refraction inorganic nano-particle covers on LED chip 3 and is positioned at the organosilicon that light cup 2, the first layer of silica gel 5 contain high index of refraction inorganic nano-particle, and the thickness of the first layer of silica gel is 1～100 μ m; Inorganic nano-particle is made up of one or more in titanium dioxide, zirconia, magnesium oxide, aluminium oxide, silicon dioxide, and particle diameter is between 1～100 nm; Inorganic nano-particle shared proportion in the first layer of silica gel is 1～50%.Intermediate layer fluorophor 6 is located in the first layer of silica gel 5, and intermediate layer fluorophor 6 is one or more combinations of yellow fluorescence bisque, red fluorescence powder or green emitting phosphor and blue colour fluorescent powder.

The second layer of silica gel 7 containing high index of refraction inorganic nano-particle covers the organosilicon that fluorophor 6, the second layer of silica gel 7 in intermediate layer contain high index of refraction inorganic nano-particle, and the thickness of the second layer of silica gel is 1～100 μ m; Inorganic nano-particle is made up of one or more in titanium dioxide, zirconia, magnesium oxide, aluminium oxide, silicon dioxide, and particle diameter is between 1～100 nm; Inorganic nano-particle shared proportion in the second layer of silica gel is 1～50%.In the second layer of silica gel, be provided with sawtooth 71, the degree of depth h of sawtooth 71 is 0-10 μ m, and the wedge angle α of sawtooth is 0-45 °.

In the utility model; owing to being provided with the layer of silica gel that contains high refractive index nanoparticles on intermediate layer fluorophor 6; be equivalent to and increased an optical lens; further improve the light emission rate of LED; in addition; the second layer of silica gel can also prevent that fluorophor from exposing, and has played the effect of protection fluorophor.The sawtooth 71 of this parameter, total reflection phenomenon is minimum, can further improve light extraction efficiency.

Claims

1. can improve a LED for light emission rate, comprise substrate and light cup, light cup is located on substrate, is provided with the LED chip being installed on substrate in light cup, is provided with the first layer of silica gel that covers LED chip in light cup, is provided with intermediate layer fluorophor in the first layer of silica gel; It is characterized in that: on the fluorophor of intermediate layer, be provided with the second layer of silica gel containing high index of refraction inorganic nano-particle.

2. the LED that can improve light emission rate according to claim 1, is characterized in that: in the second layer of silica gel, be provided with sawtooth, the degree of depth of sawtooth is 0-10 μ m, and the wedge angle of sawtooth is 0-45 °.

3. the LED that can improve light emission rate according to claim 1, is characterized in that: the first layer of silica gel is the first layer of silica gel containing high index of refraction inorganic nano-particle.