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CN1296450C - 粘接剂及电气装置 - Google Patents

粘接剂及电气装置 Download PDF

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CN1296450C
CN1296450C CNB011425369A CN01142536A CN1296450C CN 1296450 C CN1296450 C CN 1296450C CN B011425369 A CNB011425369 A CN B011425369A CN 01142536 A CN01142536 A CN 01142536A CN 1296450 C CN1296450 C CN 1296450C
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temperature
agent
resinous principle
caking agent
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CN1350045A (zh
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武市元秀
小西美佐夫
筱崎润二
阿久津恭志
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Dexerials Corp
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Sony Chemicals Corp
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Abstract

本发明提供可靠性高的半导体芯片连接用树脂。粘接剂(12)包含能聚合的主树脂成分，使主树脂成分自行聚合的主固化剂和对主树脂成分加成聚合反应的副固化剂。在基板(13)上涂敷此粘接剂(12)，贴合半导体芯片(11)，一旦加热的话，对由于主树脂成分自行聚合反应而形成的三维网状结构的主链，副固化剂进行加成聚合反应。由加成聚合反应部分呈胶状结构的第1温度比主链呈胶状结构的第2温度低，所以在第1温度中的弹性模量降低率急剧变大，能够减轻半导体芯片(11)与基板(13)之间的应力。

Description

粘接剂及电气装置
技术领域
本发明是关于粘接剂，特别是关于在基板上连接半导体芯片用的粘接剂。
背景技术
过去，为了在衬底上粘接半导体芯片，一直使用由热固性或热塑性树脂构成的粘接剂。
图4表示用粘接剂112将半导体芯片111附着在衬底113上的状态，半导体芯片111所具有的凸起状端子121被连接在由在基板113上布线图形中的一部分形成的端子122上。在这种状态时，半导体芯片111内的电子元件通过端子121、122与基板113上的布线图形电连接。
但是，由于半导体芯片的线膨涨系数为3ppm/℃的程度，而粘接剂112的线膨涨系数为25-60ppm/℃，比半导体芯片的线膨涨系数大，所以由于线膨涨系数之差，在粘接界面上残留应力。特别地，由于在半导体芯片周围，芯片尺寸越大，残留应力就越大，所以在使热固性粘接剂112固化以后，如果进行温度循环试验和加压蒸煮试验的话，就会发生半导体芯片111剥离的问题。
另外，使用以往技术的粘接剂，由于吸湿条件，连接半导体芯片111以后的可靠性降低显著，因此有必要在附着半导体芯片111以后，在将其通过反射炉，使粘接剂112固化前，预先升温至100℃左右，进行脱水处理。
本发明是为解决上述以往技术中的问题而完成的，其目的在于提供可靠性高的粘接剂。
发明内容
本发明是关于用于连接半导体芯片和基板的粘接剂。该粘接剂包含可聚合的主树脂成分、使前述主树脂成分目行聚合反应的主固化剂、以及对前述主树脂成分加成聚合反应的副固化剂。
本发明是关于如权利要求1所述的粘合剂，其特征在于，在固化后物性方面，随着温度的升高，弹性模量降低，在比30℃高、比150℃低的第1温度，以及在130℃以上、250℃以下的温度范围内，而且在作为比前述第1温度高的第2温度的双方，弹性模量的下降率急剧增加。
本发明是关于前述第1温度和前述第2温度之间的温度差为40℃以上的粘接剂。
本发明是关于前述主树脂成分是环氧树脂的粘接剂。
本发明是关于包含导电性粒子的粘接剂。
本发明是关于包含与前述主树脂成分不同地进行聚合反应的副树脂成分的粘接剂。
本发明是关于预先半固化、成形成片状的粘接剂。
本发明还包括：
一种用于连接半导体芯片和基板的粘接剂，其特征是，
含有：
可聚合的主树脂成分，
使所述主树脂成分自行聚合反应的主固化剂，
在所述主树脂成分中进行加成聚合反应的副固化剂，
与所述主树脂成分进行别的聚合反应的副树脂成分；
所述主树脂成分是环氧树脂；
所述主固化剂是咪唑类固化剂；
所述副固化剂是具有活性氢的苯酚类固化剂；
所述副树脂成分是苯氧基树脂；
在固化后的物理性能中，随着温度的上升弹性模量下降，
在比30℃高比150℃低的第1温度，以及在130℃以上250℃以下的温度范围内，而且在作为比所述第1温度高的第2温度的双方中，弹性模量的下降率急剧增加，所述第1温度和所述第2温度间的温度差在40℃以上。
附图说明
[图1](a)-(c)：是表示本发明粘接剂使用方法的一个例子的图。
[图2](a)-(c)：是表示本发明粘接剂使用方法的另一例子的图。
[图3]是表示温度变化弹性模量、损失弹性模量、损失正切随温度变化的关系图。
[图4]是用以说明过去粘接剂的图。
[符号的说明]
11-半导体芯片
12.15-粘接剂
13-基板
5.6-电装置
P1-第1温度
P2-第2温度
具体实施方式
将半导体芯片连接在基板上的粘接剂，有热塑性树脂和热固性树脂。在热固性树脂的情况时，为了防止半导体芯片的剥离，有必要将粘接剂的玻璃转变点置于比使用半导体芯片的温度范围更高的高温侧。
本发明的发明人发现，在热固性树脂的情况时，如果形成三维网状构造的主链是单一的话，因为弹性模量的温度依存性受单一主链支配，且弹性模量单调变化，所以使半导体芯片受到的应力变大。因而，在维持三维网状构造的同时，如果在使用温度范围内，设定粘接剂的弹性模量降低急剧变大的温度的话，就能够减轻应力。
本发明是基于上述见解的发明，本发明是关于用于连接半导体芯片和基板的粘接剂，该粘接剂包含可聚合的主树脂成分、使前述主树脂成分自行聚合反应的主固化剂和对前述主树脂成分加成聚合反应的副固化剂。
在本发明的上述构成当中，由于主固化剂使得主树脂成分自行聚合，形成三维网状结构组织。然后，副固化剂对该网状结构组织加成聚合，结果，出现了弹性模量变化在网状构造部分和因加成聚合而形成的网状构造部分不同的玻璃转变点，所以弹性模量的变化率在第1温度和比第1温度高的第2温度的二个温度下急剧变化。
在第1、第2温度附近以外的温度范围内，弹性模量的变化率大致一定，随着温度的增加，弹性模量降低。
在升温时，随着温度上升，弹性模量降低，一旦达到比第1温度更高的温度，加成聚合部分就变成胶状，弹性模量急剧减少。因而，在第1温度以上的温度，应力的增加就变少。
即使升温至比第1温度更高的高温，如果比第2温度低的话，由于自行聚合所形成的三维网状构造的部分维持玻璃状态，所以不使粘接力降低，半导体芯片不会从基板上剥离。
另外，将本发明粘接剂配置于半导体芯片、基板、前述半导体芯片和基板之间，通过热处理使之固化，就能够构成具有半导体芯片和基板的电气装置。
以下说明本发明的实施方式。
首先将可聚合的主树脂成分、能使该主树脂成分自行聚合反应的主固化剂和对主树脂成分进行加成聚合反应的副固化剂配合，制作本发明的粘接剂。此粘接剂呈糊状。
图1(a)中的符号13是表面上配置了铜配线的基板，由该铜配线的一部分形成连接端子22。在此连接端子22上涂敷一定量的粘接剂。图1(b)中的符号12表示被涂敷状态的粘接剂。
图1(c)中的符号11是半导体芯片。在此半导体芯片11的一面形成与内部电路连接的凸起状连接端子21。将半导体芯片11的连接端子21所处位置的那一面压接在粘接剂12上，而且使基板13中的连接端子22与半导体芯片11的连接端子21接触，同时加热，使粘接剂12固化，在使半导体芯片11与基板13的连接端子21、22彼此之间电连接的状态下将半导体芯片11固定在基板13上，得到本发明的电气装置5。
上述粘接剂呈糊状，而本发明粘接剂也包括以显示自己支撑性程度的半固化膜状的粘接剂和添加固态树脂呈薄膜状的粘接剂。
图2(a)的符号15表示本发明中一个例子的膜状粘接剂，如图2(b)所示，首先将此粘接剂15贴合在形成基板13的连接端子22一侧的表面上，然后如图2(c)所示，在粘接剂15的表面上贴合半导体芯片11，使基板13的连接端子22与半导体芯片11中的连接端子21接触。加热处理使粘接剂15固化，就得到本发明的电气装置6。
图3是表示本发明一例的粘接剂相对于温度的弹性模量、弹性模量损失和tanδ的关系的图，此粘接剂各自包含20重量份作为可聚合的主树脂成分环氧树脂(大日本インキ化学工业(株)制造「HP4032D」)、15重量份作为使该主树脂成分自行聚合反应的主固化剂环氧分散咪唑类固化剂(旭化成(株)制造「HX 3941HP」)、5重量份作为与主树脂成分加成聚合反应的副固化剂酚类固化剂(大日本インキ化学工业(株)制造「VH4170」)、10重量份作为不与环氧树脂反应的副树脂成分苯氧基树脂(东都化成(株)制造「YP50」)和45重量份作为填充剂的二氧化硅。
在加热此粘接剂的时候，首先在大约100℃的第1温度P1时，弹性模量的降低率(表示弹性模量随温度变化的曲线的坡度)急剧变大，然后在大约160℃的第2温度P2时，弹性模量的降低率进一步变大。在从室温至第1温度P1期间、在从第1温度P1到第2温度P2之间、在从第2温度P2到200℃之间，弹性模量降低率大致是一定的。
在主树脂成分使用环氧树脂的时候，除咪唑类固化剂以外，可以使用叔胺、路易斯酸类催化剂作为使主树脂成分自行聚合的主固化剂。可以使用具有活性氢的胺类固化剂、酚类固化剂、酰肼类固化剂、巯基类固化剂、双氰胺类固化剂等作为对主树脂成分加成聚合反应的副固化剂。
本发明中的树脂，从生产效率方面考虑希望能够使其在短时间内固化，因此在180℃以上、250℃以下的温度范围内加热5秒以上、20秒钟以下。因而，希望第2温度P2至少在130℃以上。另外，为了在反射炉中使固化后不残留残余应力，在加热中的最高温度下，希望弹性模量在0.5GPa以下。作为目标，希望在250℃下弹性模量在0.5GPa以下且0.1GPa以上。
以下，按下面表1所示的配合制作实施例1至实施例6以及比较例1的粘接剂。
表1使用的树脂和固化剂
  实施例1   实施例2  实施例3  实施例4  实施例5  实施例6  比较例1
  副树脂成分YP50   10   10  10  10  20  10  10
  主树脂成分HP4032D   20   20  20  -  10  20  20
  主树脂成分EP828   -   -  -  20  -  -  -
  填充剂二氧化硅   45   45  45  45  45  50  45
  副固化剂DICY   -   1.5  -  -  -  -  -
  副固化剂VH4170   5   -  5  5  5  5  -
  主固化剂HX3941HP   15   15  15  15  15  15  15
  导电粒子20GNR   21   21  -  21  21  21  21
YP50……苯氧基树脂：东都化成(株)
HP4032D……环氧树脂 环氧当量140g/eq
大日本インキ化学工业(株)
EP828……环氧树脂 环氧当量190g/eq
油化シエルイポキシ(株)
DICY……双氰胺固化剂 活性氢当量21g/eq
日本カ一バイド(株)
VH4170……酚类固化剂 活性氢当量118g/eq
HX3941HP……环氧分散咪唑类固化剂 环氧当量280g/eq
旭化成(株)
20GNR……金属涂层树脂粒子 日本化学工业(株)
HP 4032D和EP 828是本发明中的可聚合主树脂成分，HX 3941HP是能使主树脂成分自行聚合反应的主固化剂。另外，DICY和VH4170是与主树脂成分加成聚合反应的副固化剂。YP50是与主树脂成分不同、另外聚合反应的副树脂成分。比较例1不含有副固化剂。
上述实施例1-6和比较例1中的粘接剂呈膜状，如图1(a)～(c)所示，将特别用于连接试验所制作的半导体芯片11置于作为玻璃环氧基板的基板13上，在180℃×20秒条件下连接。此时施加的负荷相当于半导体芯片11的每1个连接端子21为100g。所用半导体芯片11的大小是10mm正方形的硅片。
与上述不同，在200℃温度下加热实施例1-6和比较例1的粘接膜5分钟，使其固化后，切取2mm×5cm、厚50μm大小，制作试验片。用该试验片将半导体芯片11贴合在基板13上，在30℃、RH70％气氛中放置192小时以后，使其通过反射炉，在最高温度240℃下加热，使粘接剂固化。
对试验片测量损失正切(tanδ)与250℃的弹性模量，以及测量在弹性模量的变化率增加方向急剧变化的第1、2温度P1、P2与在该第1、第2温度P1、P2、时的弹性模量。损失正切(tanδ)、损失弹性模量、弹性模量的测定方法按照JIS K7198-1991(现在转成JIS K7244-4：1999)执行。
还有，对于连接半导体芯片11的基板13，施行温度循环试验(TCT)和加压蒸煮试验(PCT)。
测量结果列于表2。
表2测量结果
  实施例1   实施例2   实施例3   实施例4   实施例5   实施例6  比较例1
 低温侧的tanδ峰   111   120   110   107   105   113  160
 高温侧的tanδ峰   181   175   180   165   178   180  无
 250℃弹性率   0.21   0.18   0.23   0.07   0.12   0.25  0.29
 第1温度P1   103   105   102   98   96   104  118
 第1温度P1时的弹性率E1   4.3   3.3   4.1   4.2   4.0   4.5  4.0
 第2温度P2   160   153   161   135   157   162  -
 第2温度P2时的弹性率E2   1.2   1.2   1.1   1.2   1.0   1.4  -
 E1/E2   3.6   2.8   3.7   3.5   4.0   3.2  -
 TCT周期   1000＜   1000＜   850   762   435   525  15
 PCT300h   Good   Good   Good   Good   Good   Good  NG
试验片……2mm×5cm  厚50μm
损失正切测量频率……11Hz
吸湿条件……30℃，RH70％，192时间
反射温度……最大240℃
TCT条件……-55℃/125℃
PCT条件……121℃，2.1atm RH100％
正如从上述表2中所理解的那样，实施例1-6与比较例1相比较，在温度循环试验方面能够得到数十倍的可靠性，而且300小时加压蒸煮试验结果，在比较例1中，半导体芯片11与基板13的连接端子21、22之间的电连接失掉，变得不好，而使用本发明中粘接剂的实施例1-6能够保持电气连接，全部是合格品。
如果试着求出在第1温度P1时的弹性模量E1与在第2温度P2时的弹性模量E2之比E1/E2的话，从表2可以看出，本发明粘接剂的E1/E2值为2.8以上。如果E1/E2值为2.8以上的话，就能预料对温度循环试验(TCT)能够合格。
在上述各实施例当中，金属涂膜树脂粒子用作导电性粒子，但也可以使用金属粒子。另外，如实施例3所示，也可以不含导电性粒子。
更进一步地，在上述实施例当中，二氧化硅用作填料，但也可以使用氧化铝和氧化钛等其他填料。用苯氧基树脂作为与主树脂成分不同地进行聚合反应的副树脂成分，但也可使用聚酯树脂、丙烯酸树脂、聚氨酯树脂等其他种类的树脂。另外，也可以不包含副树脂成分。还可以配合偶联剂等添加剂。
为了将本发明的粘接剂形成到薄膜上，可将本发明的粘接剂涂敷在平板等上，加热并以10％-40％的固化率使之半固化即可。
发明的效果
由于弹性模量的降低率分二阶段变化，所以就能得到施加于半导体芯片的应力小而且可靠性高的电装置。

Claims (4)

1.一种用于连接半导体芯片和基板的粘接剂，其特征是，
含有：
可聚合的主树脂成分，
使所述主树脂成分自行聚合反应的主固化剂，
在所述主树脂成分中进行加成聚合反应的副固化剂，
与所述主树脂成分进行别的聚合反应的副树脂成分；
所述主树脂成分是环氧树脂；
所述主固化剂是咪唑类固化剂；
所述副固化剂是具有活性氢的酚类固化剂；
所述副树脂成分是苯氧基树脂；
在固化后的物理性能中，随着温度的上升弹性模量下降，在比30℃高比150℃低的第1温度，以及在130℃以上250℃以下的温度范围内，而且在作为比所述第1温度高的第2温度的双方中，弹性模量的下降率急剧增加，所述第1温度和所述第2温度间的温度差在40℃以上。
2.如权利要求1所述的粘接剂，其特征在于，含有导电性粒子。
3.如权利要求1所述的粘接剂，其特征在于，含有填料。
4.如权利要求1所述的粘接剂，其特征在于，预先半固化，成形为片状。
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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002121526A (ja) * 2000-10-17 2002-04-26 Shin Etsu Polymer Co Ltd 絶縁性接着剤、異方導電接着剤、及びヒートシールコネクタ
KR101039978B1 (ko) 2004-06-09 2011-06-13 히다치 가세고교 가부시끼가이샤 접착제 조성물, 회로접속재료, 회로부재의 접속구조 및 반도체 장치
JP2005020018A (ja) * 2004-07-30 2005-01-20 Sony Chem Corp 接着剤及び電気装置
KR101009090B1 (ko) 2005-02-21 2011-01-18 닛토덴코 가부시키가이샤 반도체 장치의 제조 방법
JP4976719B2 (ja) * 2006-03-28 2012-07-18 住友ベークライト株式会社 絶縁シート、金属箔付き絶縁シートおよび多層プリント配線板
US7772040B2 (en) 2006-09-12 2010-08-10 Nitto Denko Corporation Manufacturing method of semiconductor device, adhesive sheet used therein, and semiconductor device obtained thereby
JP4523611B2 (ja) * 2007-02-20 2010-08-11 日東電工株式会社 半導体装置の製造方法
CN101939396B (zh) * 2007-09-19 2012-11-21 东丽株式会社 电子部件用粘合剂组合物及使用其的电子部件用粘合剂片材
US8563362B2 (en) 2009-03-10 2013-10-22 Sekisui Chemical Co., Ltd. Method of producing semiconductor chip laminate comprising an adhesive that comprises a curing compound, curing agent and spacer particles
US8592260B2 (en) 2009-06-26 2013-11-26 Nitto Denko Corporation Process for producing a semiconductor device
JP5981451B2 (ja) * 2010-12-29 2016-08-31 スリーエム イノベイティブ プロパティズ カンパニー 構造用ハイブリッド接着剤
JP5883679B2 (ja) * 2011-02-25 2016-03-15 積水化学工業株式会社 接続構造体の製造方法、異方性導電材料及び接続構造体
PL2870190T3 (pl) 2012-07-03 2019-07-31 3M Innovative Properties Company Sposób wytwarzania hybrydowych wyrobów przylepnych o zróżnicowanej strukturze
US11258184B2 (en) 2019-08-21 2022-02-22 Ticona Llc Antenna system including a polymer composition having a low dissipation factor
US11637365B2 (en) 2019-08-21 2023-04-25 Ticona Llc Polymer composition for use in an antenna system
US11912817B2 (en) 2019-09-10 2024-02-27 Ticona Llc Polymer composition for laser direct structuring
US11555113B2 (en) 2019-09-10 2023-01-17 Ticona Llc Liquid crystalline polymer composition
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135884A (ja) * 1987-11-19 1989-05-29 Hitachi Chem Co Ltd 銅張積層板用銅箔接着剤
JPH01275622A (ja) * 1988-04-28 1989-11-06 Mitsubishi Cable Ind Ltd エポキシ樹脂組成物
JPH02145676A (ja) * 1988-11-28 1990-06-05 Hitachi Chem Co Ltd 銅張積層板用銅箔接着剤
JPH04224820A (ja) * 1990-12-26 1992-08-14 Toto Kasei Kk エポキシ樹脂組成物
JPH05160172A (ja) * 1991-12-09 1993-06-25 Hitachi Chem Co Ltd 半導体素子用接着剤および半導体装置
JPH05339556A (ja) * 1992-06-11 1993-12-21 Hitachi Chem Co Ltd 接着剤組成物
JPH0669257A (ja) * 1992-08-21 1994-03-11 Hitachi Chem Co Ltd 半導体素子用接着剤および半導体装置
JPH06151479A (ja) * 1992-11-12 1994-05-31 Hitachi Chem Co Ltd 導電性樹脂ペーストおよび半導体装置
JP2000080341A (ja) * 1998-06-22 2000-03-21 Toshiba Chem Corp 異方性導電接着剤および基板搭載デバイス

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0819213B2 (ja) * 1990-07-09 1996-02-28 三菱電機株式会社 エポキシ樹脂組成物および銅張積層板
US5965269A (en) * 1995-04-04 1999-10-12 Hitachi Chemical Company, Ltd. Adhesive, adhesive film and adhesive-backed metal foil
JP3787889B2 (ja) * 1996-05-09 2006-06-21 日立化成工業株式会社 多層配線板及びその製造方法
JP3711842B2 (ja) * 2000-06-01 2005-11-02 ソニーケミカル株式会社 異方性導電接続材料及び接続構造体

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135884A (ja) * 1987-11-19 1989-05-29 Hitachi Chem Co Ltd 銅張積層板用銅箔接着剤
JPH01275622A (ja) * 1988-04-28 1989-11-06 Mitsubishi Cable Ind Ltd エポキシ樹脂組成物
JPH02145676A (ja) * 1988-11-28 1990-06-05 Hitachi Chem Co Ltd 銅張積層板用銅箔接着剤
JPH04224820A (ja) * 1990-12-26 1992-08-14 Toto Kasei Kk エポキシ樹脂組成物
JPH05160172A (ja) * 1991-12-09 1993-06-25 Hitachi Chem Co Ltd 半導体素子用接着剤および半導体装置
JPH05339556A (ja) * 1992-06-11 1993-12-21 Hitachi Chem Co Ltd 接着剤組成物
JPH0669257A (ja) * 1992-08-21 1994-03-11 Hitachi Chem Co Ltd 半導体素子用接着剤および半導体装置
JPH06151479A (ja) * 1992-11-12 1994-05-31 Hitachi Chem Co Ltd 導電性樹脂ペーストおよび半導体装置
JP2000080341A (ja) * 1998-06-22 2000-03-21 Toshiba Chem Corp 異方性導電接着剤および基板搭載デバイス

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