CN112959010B - Method for assembling target and copper back plate - Google Patents
Method for assembling target and copper back plate Download PDFInfo
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- CN112959010B CN112959010B CN202110190254.4A CN202110190254A CN112959010B CN 112959010 B CN112959010 B CN 112959010B CN 202110190254 A CN202110190254 A CN 202110190254A CN 112959010 B CN112959010 B CN 112959010B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
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Abstract
The invention provides an assembling method of a target and a copper back plate, which comprises the following steps: (1) pretreating the target material and the copper back plate; (2) assembling and welding the pretreated target material and the copper back plate; (3) a heat dissipation water channel is formed in the copper back plate; (4) performing sand blasting treatment and meltallizing treatment on the surfaces of the assembled target and the copper back plate; wherein the pretreatment of the copper back plate comprises one-time OP2 turning and OP1 turning of the copper back plate. The assembly method can be used for rapidly welding after turning, the contact time of the turning surface and air is short, the turning surface is not easy to rust, the product quality is improved, the product does not need to be subjected to rust removal treatment, manpower and material resources are saved, the working time is saved, the cost is reduced, and the process is further optimized.
Description
Technical Field
The invention belongs to the field of target material assembly, and relates to a method for assembling a target material and a copper back plate.
Background
Sputtering Target copper Back Plate (BP): metal sputtering targets are materials used as cathodes in sputter deposition techniques. The cathode material is separated from the cathode in the form of molecules, atoms or ions under the impact of positive charged cations in a sputtering machine and is redeposited on the surface of the anode. Since the metal sputtering target is usually a relatively expensive material such as high-purity aluminum, copper, titanium, nickel, tantalum, and noble metal, a relatively common material is often used as the copper backing plate during the manufacturing process. The copper back plate has the functions of supporting the target material, cooling, reducing the cost and the like, and common materials comprise aluminum Alloy (ALBP), copper alloy (CUBP) and the like.
The prior art of the copper target material adopts a process of firstly turning a welding surface by OP1 and then turning a back plate surface by OP2, so that the retention time is long after the turning of the sputtering surface is finished, the copper is easy to rust after contacting with air, the difficulty is increased for the subsequent working procedure processing, and a large amount of cost is also spent for rust removal.
Disclosure of Invention
In order to solve the technical problems, the application provides an assembly method of a target and a copper back plate, the assembly method can be used for rapidly welding after turning, the contact time of a turning surface and air is short, rustiness is not prone to occurring, the quality of a product is improved, the product does not need to be subjected to rust removal treatment, manpower and material resources and working hours are saved, the cost is reduced, and the process is further optimized.
In order to achieve the technical effect, the invention adopts the following technical scheme:
the invention provides an assembling method of a target and a copper back plate, which comprises the following steps:
(1) pretreating the target material and the copper back plate;
(2) assembling and welding the pretreated target material and the copper back plate;
(3) a heat dissipation water channel is formed in the copper back plate;
(4) performing sand blasting treatment and meltallizing treatment on the surfaces of the assembled target and the copper back plate;
wherein the pretreatment of the copper backing plate comprises one-time OP2 turning and OP1 turning of the copper backing plate.
As a preferred technical solution of the present invention, the method for pretreating a target material includes: and turning end face threads on the welding surface of the target, and carrying out IPA liquid ultrasonic cleaning and drying on the welding surface of the target.
In a preferred embodiment of the present invention, the crystal grain size of the target material is 100 μm or less, such as 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm or 90 μm, but the target material is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
Preferably, the end face thread has a pitch of (0.4 to 0.5) (0.1 to 0.2), such as 0.41 × 0.19, 0.42 × 0.18, 0.43 × 0.17, 0.44 × 0.16, 0.45 × 0.15, 0.46 × 0.14, 0.47 × 0.13, 0.48 × 0.12, or 0.49 × 0.11, but not limited to the values listed, and other values not listed within this range are equally applicable.
Preferably, the ultrasonic cleaning time is not less than 10min, such as 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min or 9min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the drying is vacuum drying, the vacuum degree of the vacuum drying is not higher than 0.01Pa, and the time is not lower than 60 min.
As the preferable technical scheme of the invention, the OP2 turning is OP2 turning of the back plate surface.
Preferably, the OP1 turning is OP1 turning weld face.
Preferably, the pitch of the turned welded face of OP1 is (0.4-0.5) ((0.1-0.2)), such as 0.41 × 0.19, 0.42 × 0.18, 0.43 × 0.17, 0.44 × 0.16, 0.45 × 0.15, 0.46 × 0.14, 0.47 × 0.13, 0.48 × 0.12, or 0.49 × 0.11, but not limited to the recited values, and other values within this range are equally applicable.
And turning the copper back plate OP1, and then ultrasonically cleaning and drying the copper back plate by IPA liquid.
Preferably, the IPA liquid is ultrasonically cleaned for a time period not less than 10min, such as 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, or 9min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the drying is vacuum drying, the vacuum degree of the vacuum drying is not higher than 0.01Pa, and the time is not lower than 60 min.
As a preferable technical scheme of the invention, the welding comprises assembling before welding, capsule welding and degassing and hot isostatic pressing welding.
As the preferred technical scheme of the invention, the sheath welding adopts argon arc welding.
Preferably, after the sheath is welded, vacuumizing the sheath, wherein the vacuum degree of vacuumizing is not higher than 0.001 Pa.
Preferably, the evacuation is followed by helium leak checking and degassing.
Preferably, the degassing temperature is 300-400 ℃, the vacuum degree is not higher than 0.002Pa, and the time is 3-5 h.
The degassing temperature can be 310 degrees, 320 degrees, 330 degrees, 340 degrees, 350 degrees, 360 degrees, 370 degrees, 380 degrees or 390 degrees, time can be 3.2h, 3.5h, 3.8h, 4h, 4.2h, 4.5h or 4.8h, but not limited to the numerical value, the above-mentioned each numerical value range other not listed numerical value is also applicable.
In a preferred embodiment of the present invention, the hot isostatic pressing temperature is 400 to 500 ℃, for example, 510 ℃, 520 ℃, 530 ℃, 540 ℃, 550 ℃, 560 ℃, 570 ℃, 580 ℃, or 590 ℃, but the temperature is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
Preferably, the hot isostatic pressing welding pressure is not lower than 105MPa, such as 110MPa, 120MPa, 130MPa, 140MPa or 150MPa, but is not limited to the recited values, and other values not recited in the range of values are equally applicable.
Preferably, the hot isostatic pressing welding time is 5 to 8 hours, such as 5.5 hours, 6 hours, 6.5 hours, 7 hours or 7.5 hours, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
In a preferred embodiment of the present invention, the heat dissipation channel includes at least one annular channel, such as 2, 3, 4, 5, 6, 7, 8, 9, or 10, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
Preferably, the radius of the annular water channel is 120-200 mm, such as 130mm, 140mm, 150mm, 160mm, 170mm, 180mm or 190mm, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
Preferably, the depth of the annular water channel is 5.60-5.85 mm, such as 5.62mm, 5.65mm, 5.68mm, 5.70mm, 5.72mm, 5.75mm, 5.78mm, 5.80mm, 5.82mm, or 5.84mm, but not limited to the values listed, and other values not listed in the range of values are equally applicable.
In a preferred embodiment of the present invention, the roughness of the sandblasting is 5.25 to 8.23. mu.m, such as 5.35. mu.m, 5.50. mu.m, 5.80. mu.m, 6.00. mu.m, 6.50. mu.m, 7.00. mu.m, 7.50. mu.m, 8.00. mu.m, 8.10. mu.m, or 8.20. mu.m, but the roughness is not limited to the above-mentioned values, and other values not listed in the above-mentioned range of values are also applicable.
In a preferred embodiment of the present invention, the roughness of the thermal spray treatment is 17.94 to 21.13 μm, such as 18.00. mu.m, 18.50. mu.m, 19.00. mu.m, 19.50. mu.m, 20.00. mu.m, 20.50. mu.m, 21.00. mu.m, or 21.10. mu.m, but the roughness is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Compared with the prior art, the invention at least has the following beneficial effects:
the invention provides an assembly method of a target and a copper back plate, which can be used for welding quickly after turning, the contact time of a turning surface and air is short, rustiness is not easy to occur, the product quality is improved, rust removal treatment is not needed for the product, manpower, material resources and working hours are saved, the cost is reduced, and the process is further optimized.
Detailed Description
For the purpose of facilitating an understanding of the present invention, the following examples are set forth herein. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides an assembling method of a target and a copper back plate, which includes the following steps:
(1) pretreating a titanium target material and a copper back plate;
the pretreatment method of the titanium target comprises the following steps: turning end face threads on the welding surface of the target, wherein the thread pitch of the end face threads is 0.4 x 0.2, carrying out IPA liquid ultrasonic cleaning on the welding surface of the target for 10min, and carrying out vacuum drying, wherein the vacuum degree is not higher than 0.01Pa, and the time is 60 min;
the pretreatment method of the copper back plate comprises the following steps: sequentially carrying out OP2 turning of a back plate surface and OP1 turning of a welding surface on the copper back plate, wherein the pitch of the OP1 turning of the welding surface is 0.4 x 0.2, carrying out IPA liquid ultrasonic cleaning on the copper back plate for 10min, and carrying out vacuum drying, wherein the vacuum degree is not higher than 0.01Pa, and the time is 60 min;
(2) assembling and welding the titanium target material and the copper back plate after surface treatment;
the welding comprises assembling before welding, sheath welding, degassing and hot isostatic pressing welding;
argon arc welding is adopted for sheath welding, the sheath is vacuumized after the sheath is welded, the vacuum degree of vacuumizing is not higher than 0.001Pa, helium leakage detection and degassing are carried out after vacuumizing, the degassing temperature is 300 ℃, the vacuum degree is not higher than 0.002Pa, and the time is 5 hours;
the hot isostatic pressing welding temperature is 400 ℃, the pressure is 105MPa, and the time is 8 h;
(3) the copper back plate is provided with heat dissipation water channels, each heat dissipation water channel comprises 5 annular water channels, the intervals of the annular water channels are equal, the radius of each annular water channel is 120-200 mm, and the depth of each annular water channel is 5.60 mm;
(4) and carrying out sand blasting treatment and fusion jetting treatment on the surfaces of the assembled target and the copper back plate, wherein the roughness of the sand blasting treatment is 5.25 mu m, and the roughness of the fusion jetting treatment is 17.94 mu m.
Example 2
The present embodiment provides a method for assembling a target and a copper backing plate, including the following steps:
(1) pretreating the target material and the copper back plate;
the pretreatment method of the titanium target comprises the following steps: turning end face threads on the welding surface of the target, wherein the thread pitch of the end face threads is 0.5 x 0.1, carrying out IPA liquid ultrasonic cleaning on the welding surface of the target for 15min, and carrying out vacuum drying, wherein the vacuum degree is not higher than 0.01Pa, and the time is 90 min;
the pretreatment method of the copper back plate comprises the following steps: sequentially carrying out OP2 turning of a back plate surface and OP1 turning of a welding surface on the copper back plate, wherein the pitch of the OP1 turning of the welding surface is 0.5 x 0.1, carrying out IPA liquid ultrasonic cleaning on the copper back plate for 10min, and carrying out vacuum drying, wherein the vacuum degree is not higher than 0.01Pa, and the time is 60 min;
(2) assembling and welding the target material and the copper back plate after surface treatment;
the welding comprises assembling before welding, sheath welding, degassing and hot isostatic pressing welding;
argon arc welding is adopted for sheath welding, the sheath is vacuumized after the sheath is welded, the vacuum degree of vacuumizing is not higher than 0.001Pa, helium leakage detection and degassing are carried out after vacuumizing, the degassing temperature is 400 ℃, the vacuum degree is not higher than 0.002Pa, and the time is 3 hours;
the hot isostatic pressing welding temperature is 500 ℃, the pressure is 110MPa, and the time is 5 h;
(3) the copper back plate is provided with heat dissipation water channels, each heat dissipation water channel comprises 5 annular water channels, the intervals of the annular water channels are equal, the radius of each annular water channel is 120-200 mm, and the depth of each annular water channel is 5.85 mm;
(4) and carrying out sand blasting treatment and spray-coating treatment on the surfaces of the assembled target and the copper back plate, wherein the roughness of the sand blasting treatment is 8.23 mu m, and the roughness of the spray-coating treatment is 21.13 mu m.
Example 3
The embodiment provides an assembling method of a target and a copper back plate, which includes the following steps:
(1) pretreating a titanium target material and a copper back plate;
the pretreatment method of the titanium target comprises the following steps: turning end face threads on the welding surface of the target, wherein the thread pitch of the end face threads is 0.42 x 0.16, carrying out IPA liquid ultrasonic cleaning on the welding surface of the target for 15min, and carrying out vacuum drying for 90min, wherein the vacuum degree is not higher than 0.01 Pa;
the pretreatment method of the copper back plate comprises the following steps: sequentially carrying out OP2 turning of a back plate surface and OP1 turning of a welding surface on the copper back plate, wherein the pitch of the OP1 turning of the welding surface is 0.42 x 0.16, carrying out IPA liquid ultrasonic cleaning on the copper back plate for 15min, and carrying out vacuum drying, wherein the vacuum degree is not higher than 0.01Pa, and the time is 75 min;
(2) assembling and welding the target material and the copper back plate after surface treatment;
the welding comprises assembling before welding, sheath welding, degassing and hot isostatic pressing welding;
argon arc welding is adopted for sheath welding, the sheath is vacuumized after the sheath is welded, the vacuum degree of the vacuumizing is not higher than 0.001Pa, helium leakage detection and degassing are carried out after the vacuumizing, the degassing temperature is 380 ℃, the vacuum degree is not higher than 0.002Pa, and the time is 3.5 hours;
the hot isostatic pressing welding temperature is 470 ℃, the pressure is 115MPa, and the time is 7 h;
(3) the copper back plate is provided with heat dissipation water channels, each heat dissipation water channel comprises 8 annular water channels, the intervals of the annular water channels are equal, the radius of each annular water channel is 125-185 mm, and the depth of each annular water channel is 5.75 mm;
(4) and carrying out sand blasting treatment and spray-coating treatment on the surfaces of the assembled target, the intermediate layer and the copper back plate, wherein the roughness of the sand blasting treatment is 6.72 mu m, and the roughness of the spray-coating treatment is 20.10 mu m.
Example 4
In this example, the conditions were the same as in example 3 except that the titanium target material in example 3 was replaced with an aluminum target material.
Example 5
In this example, the conditions were the same as in example 3 except that the titanium target material in example 3 was replaced with a tungsten target material.
Example 6
The present example was carried out under the same conditions as in example 3 except that the titanium target material in example 3 was replaced with a cobalt target material.
Comparative example 1
This comparative example was conducted under the same conditions as example 3 except that the pretreatment of the copper back sheet in step (1) was conducted by OP1 turning of the weld face and then OP2 turning of the back sheet.
Comparative example 2
This comparative example was identical to example 4 except that the pretreatment of the copper backing plate in step (1) was performed by OP1 turning of the weld face and then OP2 turning of the backing plate.
Comparative example 3
This comparative example was conducted under the same conditions as example 5 except that the pretreatment of the copper back sheet in step (1) was conducted by OP1 turning of the weld face and then OP2 turning of the back sheet.
Comparative example 4
This comparative example was conducted under the same conditions as example 6 except that the pretreatment of the copper back sheet in step (1) was conducted by OP1 turning of the weld face and then OP2 turning of the back sheet.
The titanium targets used in examples 1 to 6 and comparative examples 1 to 4 had crystal grains of 100 μm or less, the copper backing plate was a CuZn alloy, C18200, hardness of 142.5 to 164.3HV, electric conductivity range: 46.4 to 50 ms/m. The welding effect is verified by adopting C-SCAN detection, the detection conditions are shown in table 1, and the results are shown in table 2.
TABLE 1
TABLE 2
| Overall binding rate/%) | Single defect rate/%) | |
| Example 1 | 98.2 | 1.5 |
| Example 2 | 99.0 | 0.7 |
| Example 3 | 99.2 | 0.6 |
| Example 4 | 99.3 | 0.5 |
| Example 5 | 99.1 | 0.6 |
| Example 6 | 99.2 | 0.5 |
| Comparative example 1 | 81.7 | 2.8 |
| Comparative example 2 | 80.2 | 3.2 |
| Comparative example 3 | 81.1 | 2.9 |
| Comparative example 4 | 81.6 | 2.8 |
The applicant states that the present invention is illustrated by the above examples to show the detailed process equipment and process flow of the present invention, but the present invention is not limited to the above detailed process equipment and process flow, i.e. it does not mean that the present invention must rely on the above detailed process equipment and process flow to be implemented. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of the raw materials of the product of the present invention, and the addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (11)
1. A method for assembling a target and a copper back plate is characterized by comprising the following steps:
(1) pretreating the target material and the copper back plate;
(2) assembling and welding the pretreated target material and the copper back plate;
(3) a heat dissipation water channel is formed in the copper back plate; the heat dissipation water channel comprises at least one annular water channel; the radius of the annular water channel is 120-200 mm; the depth of the annular water channel is 5.60-5.85 mm;
(4) performing sand blasting treatment and meltallizing treatment on the surfaces of the assembled target and the copper back plate;
the pretreatment method of the target material comprises the following steps: turning end face threads on the welding surface of the target, and carrying out IPA liquid ultrasonic cleaning and drying on the welding surface of the target; the crystal grain of the target material is less than or equal to 100 mu m; the thread pitch of the end face threads is (0.4-0.5) × (0.1-0.2); the ultrasonic cleaning time is not less than 10 min; the drying is vacuum drying, the vacuum degree of the vacuum drying is not higher than 0.01Pa, and the time is not lower than 60 min;
wherein the pretreatment of the copper back plate comprises the steps of sequentially carrying out OP2 turning of a back plate surface and OP1 turning of a welding surface on the copper back plate; carrying out IPA liquid ultrasonic cleaning and drying after turning a welding surface of the copper back plate OP 1; the ultrasonic cleaning time of the IPA liquid is not less than 10 min; the drying is vacuum drying, the vacuum degree of the vacuum drying is not higher than 0.01Pa, and the time is not lower than 60 min.
2. The method of assembling of claim 1, wherein said welding comprises pre-weld assembly, capsule welding and degassing, and hot isostatic pressing welding.
3. The assembly method according to claim 2, wherein the jacket welding uses argon arc welding.
4. The assembly method according to claim 2, characterized in that after the welding of the sheath, the sheath is evacuated, and the degree of vacuum of the evacuation is not higher than 0.001 Pa.
5. The assembly method of claim 4, wherein said evacuation is followed by a helium leak check and degassing.
6. The assembly method according to claim 2, wherein the degassing temperature is 300-400 ℃, the vacuum degree is not higher than 0.002Pa, and the degassing time is 3-5 h.
7. The assembly method according to claim 2, wherein the hot isostatic pressing welding temperature is 400-500 ℃.
8. The method of assembling of claim 2, wherein the pressure of said hot isostatic pressing weld is not less than 105 MPa.
9. The assembly method according to claim 2, wherein the time for hot isostatic pressing welding is 5-8 hours.
10. The assembly method according to claim 1, wherein the grit blasting has a roughness of 5.25 to 8.23 μm.
11. The assembling method according to claim 1, wherein the roughness of the meltallizing treatment is 17.94 to 21.13 μm.
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| CN109070257A (en) * | 2016-04-28 | 2018-12-21 | 株式会社神户制钢所 | Gas shielded arc welding system and gas-shielded arc welding method |
| CN107717024A (en) * | 2016-08-11 | 2018-02-23 | 宁波江丰电子材料股份有限公司 | The manufacture method and target material assembly of backboard |
| KR20180064243A (en) * | 2016-12-05 | 2018-06-14 | 대우조선해양 주식회사 | Method for preventing cavitation erosion of stainless steel propeller |
| CN108265274A (en) * | 2016-12-30 | 2018-07-10 | 宁波江丰电子材料股份有限公司 | The processing method of target material assembly |
| CN108788434A (en) * | 2018-06-26 | 2018-11-13 | 宁波江丰电子材料股份有限公司 | Hot isostatic press welding included a tantalum target and aluminium jacket partition method |
| CN108858808A (en) * | 2018-07-12 | 2018-11-23 | 江苏友美工具有限公司 | The preparation method of combined type diamond grooving saw blade |
| CN110421246A (en) * | 2019-08-12 | 2019-11-08 | 宁波江丰电子材料股份有限公司 | A kind of diffusion welding method of backboard and high-purity metal target |
| CN110877235A (en) * | 2019-12-03 | 2020-03-13 | 宁波江丰电子材料股份有限公司 | Polishing treatment method for surface of target back plate |
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