CN114770228B - Polishing treatment method for side edge of LCD target material - Google Patents
Polishing treatment method for side edge of LCD target material Download PDFInfo
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- CN114770228B CN114770228B CN202210398682.0A CN202210398682A CN114770228B CN 114770228 B CN114770228 B CN 114770228B CN 202210398682 A CN202210398682 A CN 202210398682A CN 114770228 B CN114770228 B CN 114770228B
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- 238000005498 polishing Methods 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000013077 target material Substances 0.000 title claims abstract description 36
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 244000137852 Petrea volubilis Species 0.000 claims abstract description 19
- 238000003466 welding Methods 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 5
- 230000007306 turnover Effects 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000009991 scouring Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010431 corundum Substances 0.000 description 6
- 229910052593 corundum Inorganic materials 0.000 description 6
- 210000002268 wool Anatomy 0.000 description 6
- 238000000227 grinding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000357293 Leptobrama muelleri Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a polishing treatment method for the side edge of an LCD target, which comprises the following steps: polishing the side edge of the LCD target material by adopting a flocking sand paper sheet to form a polished surface; the working surface of the flocking sand paper sheet is coated with IPA liquid. According to the polishing treatment method for the side edge of the LCD target, the IPA liquid is coated on the flocked abrasive paper sheet, the periphery of the LCD target is polished, foreign matters on the side edge of the LCD target and non-target integrated substances can be removed, the polished roughness is 0.01-0.6 mu m, the polishing treatment for the side edge of the LCD target can be completed within 10-100min, the turnover rate of the target is improved, the manual operation time is shortened, bad products are reduced, the roughness is stable after polishing, and the one-time passing rate is improved to 96%.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and relates to a polishing method, in particular to a polishing treatment method for the side edge of an LCD target.
Background
The sputtering target material is one of important raw materials in the preparation process of the semiconductor integrated circuit, and is mainly used for preparing physical vapor deposition films such as contacts, through holes, interconnection lines, barrier layers, packaging and the like in the integrated circuit. In the magnetron sputtering process, the target surface is bombarded by accelerated ions so that target atoms are deposited on the substrate surface, thereby forming a deposited film.
The quality of the target used in the magnetron sputtering process is one of the key factors influencing the quality of the magnetron sputtering coating. The quality requirements for sputter targets are higher than those of the traditional materials industry. The general quality requirements of the sputtering target material mainly comprise the requirements on the aspects of size, flatness, purity, component content, density, grain size, defect control and the like; in addition, the sputtering target has higher quality requirements or special quality requirements in terms of surface roughness, resistance value, grain size uniformity, composition and structure uniformity, foreign matter (oxide) content and size, magnetic permeability, ultra-high density, ultra-fine grains and the like. Therefore, further polishing is required after turning to achieve the use requirements.
At present, impurities and foreign matters on the main surface of the LCD target are mainly removed through a polishing machine, but the foreign matters, oxides and non-target integrated matters on the side surface of the LCD target are removed, and the conventional polishing method generally uses manual sand paper or pneumatic polishing machine, so that the copper rust is difficult to remove during sand paper polishing, the efficiency is low, the copper rust is directly polished by the sand paper or pneumatic polishing machine, each product is unstable in online processing time of about 3 hours, the roughness is high, the fluctuation is high, the quality is unstable, and the current production total amount and quality requirements are difficult to meet.
CN 113021125A provides a treatment method of a titanium target sputtering surface, which comprises sand paper treatment, scouring pad treatment and wool wheel treatment which are sequentially carried out; the sand paper treatment comprises 320# sand paper treatment and 600# sand paper treatment which are sequentially carried out; the scouring pad treatment comprises a 1200# scouring pad treatment and a 2000# scouring pad treatment which are sequentially carried out; the wool wheel treatment comprises wool wheel and diamond grinding paste W10 treatment, wool wheel and diamond grinding paste W3.5 treatment and wool wheel and diamond grinding paste W1.5 treatment which are sequentially carried out; the sand paper treatment time is 8-10min; the treatment time of the scouring pad is 2-4min; the wool wheel treatment time is 8-11min.
CN 112828541a discloses a method for treating tantalum target and sputtering surface thereof, which comprises turning and polishing sequentially; the turning is to feed a blade from the edge to the center along the diameter direction of the tantalum target; the turning comprises rough turning and finish turning which are sequentially carried out, and the cutting amount is kept constant in the processes of the rough turning and the finish turning; the finish turning comprises 8-12 cutter turning, and the allowance of the finish turning is 0.3-0.6mm; the polishing is to adopt sand paper firstly and then adopting scouring pad to polish the turning surface of the tantalum target material.
CN 112809455A discloses a polishing method for tungsten silicon target and its sputtering surface, the polishing method comprises the first, second and third water mill polishing to and fro; the round trip times are 15-25 times; the running speeds of the targets polished by the first water mill, the second water mill and the third water mill are respectively and independently 0.1-0.3m/s, and are respectively and independently carried out by adopting water mill abrasive belts; the rotating speed of the water grinding abrasive belt is 10-30r/min, and the specification comprises a 600# white corundum abrasive belt or a 800# white corundum abrasive belt; the first water mill polishing, the second water mill polishing and the third water mill polishing are respectively and independently accompanied with cooling water to wash the sputtering surface of the target; the flushing rate of the cooling water is 600-800mL/min, and the temperature is 5-25 ℃.
The polishing method can enable the roughness of the sputtering surface to meet the use requirement, but does not polish the side edge of the target material, and the polishing process is only applicable to the target material of specific materials.
CN 113400104a discloses a polishing method for copper target side edges, the polishing method for copper target side edges comprises the following steps: semi-automatic polishing treatment is carried out on the side edge of the copper target material by adopting handheld polishing equipment; the semiautomatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the feeding speed of each polishing procedure is gradually decreased. Although this polishing method discloses a polishing process for the side, the process of the target material for the side residual paste during sputtering is not solved, and the polishing process is only applicable to copper targets.
Therefore, how to provide a polishing treatment method for the side edge of the LCD target material, the residual glue formed by sputtering the target material is thoroughly and simply removed, so that the adverse effect on the quality of the target material is avoided, and the problem which needs to be solved by the current technicians in the field is solved.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide the polishing treatment method for the side edge of the LCD target, which can remove foreign matters on the side edge of the LCD target and substances integrated with the non-target, improve the turnover rate of the target, reduce the manual operation time, reduce bad products, and ensure that the roughness is stable after polishing, so that the disposable passing rate is improved.
To achieve the purpose, the invention adopts the following technical scheme:
The invention provides a polishing treatment method for the side edge of an LCD target, which comprises the following steps:
polishing the side edge of the LCD target material by adopting a flocking sand paper sheet to form a polished surface;
The working surface of the flocking sand paper sheet is coated with IPA liquid.
The side edges of the LCD target material further comprise side edge chamfers.
According to the invention, through coating IPA liquid on the flocked abrasive paper sheet and polishing the periphery of the LCD target, foreign matters on the side edge of the LCD target and substances integrated with the non-target can be removed, the turnover rate of the target is improved, the manual operation time is reduced, bad products are reduced, the roughness after polishing is stable, and the disposable passing rate is improved to 96%.
Preferably, the polishing treatment is preceded by a welding treatment of the LCD target and the backboard.
Preferably, the back plate comprises a stainless steel back plate.
Preferably, the temperature of the welding treatment is 275-285 ℃, for example, 275 ℃, 276 ℃, 277 ℃, 278 ℃, 279 ℃, 280 ℃, 281 ℃, 282 ℃, 283 ℃, 284 ℃, or 285 ℃, but the welding treatment is not limited to the recited values, and other values not recited in the numerical range are equally applicable.
Preferably, the welding time is 25-35min, for example, 25min, 26min, 27min, 28min, 29min, 30min, 31min, 32min, 33min, 34min or 35min, but not limited to the recited values, and other non-recited values in the numerical range are equally applicable.
Preferably, the amount of the IPA liquid is 50-70mL, for example, 50mL, 52mL, 54mL, 56mL, 58mL, 60mL, 62 mL, 64mL, 66mL, 68mL or 70mL, but not limited to the recited values, and other non-recited values within the numerical range are equally applicable.
Preferably, the flocked sandpaper sheet has an area of 10-20cm 2, for example, 10cm 2、12cm2、14cm2、16cm2、18cm2 or 20cm 2, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the IPA liquid is coated on the working surface of the flocked abrasive paper sheet in batches for use.
Preferably, the IPA liquid is coated on the working surface of the flocked sandpaper sheet for 2-5 times.
According to the invention, the IPA liquid is coated on the flocked abrasive paper sheet in batches for use, so that the polishing effect is better.
Preferably, the wear-resistant material of the working surface of the flocked abrasive paper sheet comprises brown fused alumina.
Preferably, the specification of the flocked sandpaper sheet is 120-1500#, for example, 120#, 180#, 240#, 320#, 400#, 600#, 800#, 1000#, 1200# or 1500#, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the pressure between the flocked sandpaper sheet and the side edge of the LCD target is 10-100N, for example, 10N, 20N, 30N, 40N, 50N, 60N, 70N, 80N, 90N or 100N, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the polishing treatment is performed for 10-100min, for example, 10min, 20min, 30min, 40min, 50min, 60min, 70min, 80min, 90min or 100min, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the polishing treatment is carried out at a temperature of 20 to 35 ℃, for example, 20 ℃, 22 ℃, 24 ℃, 26 ℃, 28 ℃, 30 ℃, 32 ℃, 34 ℃ or 35 ℃, but the polishing treatment is not limited to the recited values, and other non-recited values within the numerical range are equally applicable.
Preferably, the LCD target material includes any one of copper, aluminum, molybdenum, titanium, tungsten silicon, nickel silicon or tantalum.
Preferably, the polishing treatment further comprises sequentially cleaning and drying the side edges of the LCD target.
As a preferable technical scheme of the invention, the polishing treatment method for the side edge of the LCD target material provided by the invention comprises the following steps:
(1) Welding the LCD target material and the stainless steel backboard; the temperature of the welding treatment is 275-285 ℃ and the time is 25-35min;
(2) Coating IPA liquid on a working surface of a flocking sand paper sheet with the specification of 120-1500# and the area of 10-20cm 2 in batches at 20-35 ℃, and polishing the side edge of an LCD target material for 10-100min under the pressure of 10-100N; the dosage of the IPA liquid is 50-70mL;
(3) Sequentially cleaning and drying the side edges of the LCD target;
The LCD target material comprises any one of copper, aluminum, molybdenum, titanium, tungsten silicon, nickel silicon or tantalum.
The numerical ranges recited herein include not only the above-listed point values, but also any point values between the above-listed numerical ranges that are not listed, and are limited in space and for the sake of brevity, the present invention is not intended to be exhaustive of the specific point values that the stated ranges include.
Compared with the prior art, the invention has the beneficial effects that:
According to the polishing treatment method for the side edge of the LCD target, the IPA liquid is coated on the flocked abrasive paper sheet, the periphery of the LCD target is polished, foreign matters on the side edge of the LCD target and non-target integrated substances can be removed, the polished roughness is 0.01-0.6 mu m, the polishing treatment for the side edge of the LCD target can be completed within 10-100min, the turnover rate of the target is improved, the manual operation time is shortened, bad products are reduced, the roughness is stable after polishing, and the one-time passing rate is improved to 96%.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
Example 1
The embodiment provides a polishing treatment method for a side edge of an LCD target, which comprises the following steps:
(1) Welding the LCD target material and the stainless steel backboard; the temperature of the welding treatment is 280 ℃ and the time is 30min;
(2) At 30 ℃, IPA liquid is coated on the working surface of flocking sand paper sheet with the specification of 1200# and the area of 15cm 2 for three times, and the side edges of the LCD target material are respectively polished for 80 minutes under the pressure of 50N; the dosage of the IPA liquid is 60mL; the wear-resistant material of the working surface of the flocked abrasive paper sheet is brown corundum;
(3) Sequentially cleaning and drying the side edges of the LCD target;
wherein, the LCD target material is copper.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 80min, the roughness after polishing is 0.2-0.4 mu m, and the product yield is 98%.
Example 2
The embodiment provides a polishing treatment method for a side edge of an LCD target, which comprises the following steps:
(1) Welding the LCD target material and the stainless steel backboard; the temperature of the welding treatment is 275 ℃ and the time is 35min;
(2) At 20 ℃, IPA liquid is coated on the working surface of a flocking sand paper sheet with the specification of 500# and the area of 10cm 2 for 5 times, and the side edges of the LCD target material are respectively polished for 50 minutes under the pressure of 60N; the dosage of the IPA liquid is 50mL; the wear-resistant material of the working surface of the flocked abrasive paper sheet comprises brown corundum;
(3) Sequentially cleaning and drying the side edges of the LCD target;
Wherein, the LCD target material is aluminum.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 50min, the roughness after polishing is 0.05-0.4 mu m, and the product yield is 96%.
Example 3
The embodiment provides a polishing treatment method for a side edge of an LCD target, which comprises the following steps:
(1) Welding the LCD target material and the stainless steel backboard; the temperature of the welding treatment is 285 ℃ and the time is 25min;
(2) At 35 ℃, IPA liquid is coated on the working surface of a flocking sand paper sheet with the specification of 1500# and the area of 20cm 2 for 4 times, and the side edges of the LCD target material are respectively polished for 100 minutes under the pressure of 100N; the dosage of the IPA liquid is 70mL; the wear-resistant material of the working surface of the flocked abrasive paper sheet comprises brown corundum;
(3) Sequentially cleaning and drying the side edges of the LCD target;
Wherein, the LCD target material is aluminum.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 100min, the roughness after polishing is 0.1-0.5 mu m, and the product yield is 96.2%.
Example 4
The embodiment provides a polishing treatment method for a side edge of an LCD target, which comprises the following steps:
(1) Welding the LCD target material and the stainless steel backboard; the temperature of the welding treatment is 280 ℃ and the time is 30min;
(2) At 20-35 ℃, IPA liquid is coated on the working surface of flocking sand paper sheet with specification of 120# and area of 16cm 2 for 3 times, and the side edges of the LCD target material are respectively polished for 70min under the pressure of 60N; the dosage of the IPA liquid is 65mL; the wear-resistant material of the working surface of the flocked abrasive paper sheet comprises brown corundum;
(3) Sequentially cleaning and drying the side edges of the LCD target;
Wherein, the LCD target material is aluminum.
By adopting the polishing treatment method provided by the test, the polishing time is 70min, the roughness after polishing is 0.15-0.4 mu m, and the product yield is 96.2%.
Example 5
The present embodiment provides a polishing method for a side edge of an LCD target, where the polishing method for a side edge of an LCD target is different from that of embodiment 1 only in that: in this embodiment, the 3 times described in step (2) are changed to 1 time, and the total amount of the IPA liquid is unchanged.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 80min, the roughness after polishing is 0.2-0.4 mu m, and the product yield is 92%.
From this, it can be seen that the effect of example 1 is not achieved if the IPA liquid is used once.
Example 6
The present embodiment provides a polishing method for a side edge of an LCD target, which differs from embodiment 1 only in that: in this embodiment, the total amount of the IPA liquid in the step (2) is replaced by 20mL, and the polishing time is changed to 100min.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 100min, the roughness after polishing is 0.2-0.4 mu m, and the product yield is 92%.
From this, it can be seen that the amount of IPA liquid used was too small, and even if the polishing time was increased, the roughness after polishing and the yield rate of the product could not be achieved as in example 1.
Example 7
The present embodiment provides a polishing method for a side edge of an LCD target, which differs from embodiment 1 only in that: in this embodiment, the specification of the flocked abrasive paper sheet in the step (2) is changed to 2000#, and the polishing time is changed to 120min.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 120min, the roughness after polishing is 0.2-0.6 mu m, and the product yield is 89%.
From this, it can be seen that if the specification of the flocked sandpaper sheet is changed to 2000#, the polishing effect does not reach the effect of example 1 even if the polishing time is increased.
Example 8
The present embodiment provides a polishing method for a side edge of an LCD target, which differs from embodiment 1 only in that: in the embodiment, the area of the flocked abrasive paper sheet in the step (2) is changed to 5cm 2, and the polishing time is changed to 150min.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 150min, the roughness after polishing is 0.2-0.4 mu m, and the product yield is 98%.
From this, it can be seen that the area of the flocked sandpaper sheet was changed to 5cm 2, and that the polishing time was increased and more time was wasted to achieve the polishing effect of example 1.
Comparative example 1
The present comparative example provides a polishing treatment method of an LCD target side, which differs from example 1 only in that: the comparative example omits the step (2) of coating the IPA liquid on the flocked sandpaper sheet in batches, and the polishing time is changed to 150 minutes.
By adopting the polishing treatment method provided by the comparative example, the polishing time is 150min, the roughness after polishing is 0.2-0.6 mu m, and the product yield is 89%
From this, it can be seen that the polishing effect is poor by using only flocked sandpaper sheets and not using IPA liquid.
Comparative example 2
The present comparative example provides a polishing treatment method of an LCD target side, which differs from example 1 only in that: in the comparative example, the side edge is polished by adopting IPA liquid only, the polishing time is 150min, the roughness after polishing is 1.2-2.4 mu m, and the product yield is 89%.
From this, it can be seen that polishing was performed with only IPA liquid, and a flocked sandpaper sheet was not used, and the polishing effect was poor.
Comparative example 3
The present comparative example provides a polishing treatment method of an LCD target side, which differs from example 1 only in that: the side edge of the comparative example (2) was polished with alcohol in the same amount as the IPA liquid of example 1 for 4 hours, and the roughness after polishing was 2-4 μm with a product yield of 82%.
From this, it can be seen that the polishing of the side edge only by alcohol has a much reduced roughness after polishing and a poor product yield.
Comparative example 4
The present comparative example provides a polishing treatment method of an LCD target side, which differs from example 1 only in that: the step (2) of the comparative example is changed to the use of alcohol matched with flocked abrasive paper sheets, the dosage is the same as that of IPA liquid in the example 1, the side edge is polished for 4 hours, the roughness after polishing is 1-2, and the product yield is 83%.
Even if the polishing time is prolonged after the IPA liquid is replaced with alcohol, the roughness and the product yield after polishing do not reach the effects of example 1.
Comparative example 5
The present comparative example provides a polishing treatment method of an LCD target side, which differs from example 1 only in that: in the comparative example (2), the flocked abrasive paper sheet was replaced with a scouring pad, and the side was polished for 100 minutes with a roughness of 1-2 and a product yield of 92%.
After the flocked sandpaper sheet is replaced with the scouring pad, even if the polishing time is prolonged, the roughness and the product yield after polishing do not reach the effects of example 1.
In summary, according to the method for polishing the side edge of the LCD target, the IPA liquid is coated on the flocked abrasive paper sheet to polish the periphery of the LCD target, so that foreign matters on the side edge of the LCD target and non-target integrated substances can be removed, the polished roughness of the side edge of the LCD target can be finished within 10-100min at 0.01-0.6 mu m, the turnover rate of the target is improved, the manual operation time is shortened, bad products are reduced, the roughness is stable after polishing, and the one-time passing rate is improved to 96%.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (3)
1. The polishing treatment method for the side edge of the LCD target material is characterized by comprising the following steps of:
(1) Welding the LCD target material and the stainless steel backboard; the temperature of the welding treatment is 275-285 ℃ and the time is 25-35min;
(2) Coating IPA liquid on a working surface of a flocking sand paper sheet with the specification of 120-1500# and the area of 10-20cm 2 in batches at 20-35 ℃, and polishing the side edge of an LCD target material for 10-100min under the pressure of 10-100N; the dosage of the IPA liquid is 50-70mL; the roughness after polishing is 0.01-0.6 mu m;
(3) Sequentially cleaning and drying the side edges of the LCD target;
The LCD target material comprises any one of copper, aluminum, molybdenum, titanium, tungsten silicon, nickel silicon or tantalum.
2. The method for polishing the side edges of an LCD target according to claim 1, wherein the IPA solution is applied to the working surface of the flocked sandpaper sheet 2-5 times.
3. The method of claim 1, wherein the wear-resistant material of the working surface of the flocked abrasive paper sheet comprises brown alumina.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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