CN111745313B - 检查用基板和检查方法 - Google Patents
检查用基板和检查方法 Download PDFInfo
- Publication number
- CN111745313B CN111745313B CN202010185530.3A CN202010185530A CN111745313B CN 111745313 B CN111745313 B CN 111745313B CN 202010185530 A CN202010185530 A CN 202010185530A CN 111745313 B CN111745313 B CN 111745313B
- Authority
- CN
- China
- Prior art keywords
- inspection
- streets
- laser beam
- substrate
- along
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 290
- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 18
- 125000006850 spacer group Chemical group 0.000 claims abstract description 29
- 238000012545 processing Methods 0.000 claims description 24
- 239000000523 sample Substances 0.000 claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 41
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000011158 quantitative evaluation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/705—Beam measuring device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/707—Auxiliary equipment for monitoring laser beam transmission optics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019059005A JP7289592B2 (ja) | 2019-03-26 | 2019-03-26 | 検査用基板及び検査方法 |
| JP2019-059005 | 2019-03-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111745313A CN111745313A (zh) | 2020-10-09 |
| CN111745313B true CN111745313B (zh) | 2024-05-07 |
Family
ID=72641029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010185530.3A Active CN111745313B (zh) | 2019-03-26 | 2020-03-17 | 检查用基板和检查方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7289592B2 (ko) |
| KR (1) | KR20200115118A (ko) |
| CN (1) | CN111745313B (ko) |
| SG (1) | SG10202002175VA (ko) |
| TW (1) | TW202036694A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113894415A (zh) * | 2021-11-01 | 2022-01-07 | 大族激光科技产业集团股份有限公司 | 防漏光金属中框及其加工方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07301648A (ja) * | 1994-05-06 | 1995-11-14 | Mitsubishi Electric Corp | 基板検査装置および基板検査方法 |
| JP2001203139A (ja) * | 2000-01-19 | 2001-07-27 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2002246339A (ja) * | 2000-11-15 | 2002-08-30 | Hitachi Ltd | 半導体装置の製造方法 |
| CN101170075A (zh) * | 2006-10-27 | 2008-04-30 | 株式会社迪思科 | 晶片的分割方法以及分割装置 |
| CN106449597A (zh) * | 2015-08-07 | 2017-02-22 | 株式会社迪思科 | 检查用晶片和检查用晶片的使用方法 |
| CN107270946A (zh) * | 2016-03-30 | 2017-10-20 | 松下知识产权经营株式会社 | 光检测装置以及光检测系统 |
| CN107958847A (zh) * | 2016-10-14 | 2018-04-24 | 株式会社迪思科 | 检查用晶片和检查用晶片的使用方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04155937A (ja) * | 1990-10-19 | 1992-05-28 | Fujitsu Ltd | レーザ光のオーバーパワーモニタ方法 |
| JP2003340581A (ja) | 2002-05-24 | 2003-12-02 | Koike Sanso Kogyo Co Ltd | レーザ加工装置及びレーザ光の軸ズレ検知部材 |
| JP5559599B2 (ja) | 2010-05-25 | 2014-07-23 | ローム株式会社 | 半導体装置およびその製造方法ならびに半導体ウエハ |
| JP5968150B2 (ja) | 2012-08-03 | 2016-08-10 | 株式会社ディスコ | ウエーハの加工方法 |
| JP6721420B2 (ja) | 2016-06-02 | 2020-07-15 | 株式会社ディスコ | 漏れ光検出方法 |
-
2019
- 2019-03-26 JP JP2019059005A patent/JP7289592B2/ja active Active
-
2020
- 2020-02-27 KR KR1020200024332A patent/KR20200115118A/ko unknown
- 2020-03-10 SG SG10202002175VA patent/SG10202002175VA/en unknown
- 2020-03-17 CN CN202010185530.3A patent/CN111745313B/zh active Active
- 2020-03-23 TW TW109109695A patent/TW202036694A/zh unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07301648A (ja) * | 1994-05-06 | 1995-11-14 | Mitsubishi Electric Corp | 基板検査装置および基板検査方法 |
| JP2001203139A (ja) * | 2000-01-19 | 2001-07-27 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2002246339A (ja) * | 2000-11-15 | 2002-08-30 | Hitachi Ltd | 半導体装置の製造方法 |
| CN101170075A (zh) * | 2006-10-27 | 2008-04-30 | 株式会社迪思科 | 晶片的分割方法以及分割装置 |
| CN106449597A (zh) * | 2015-08-07 | 2017-02-22 | 株式会社迪思科 | 检查用晶片和检查用晶片的使用方法 |
| CN107270946A (zh) * | 2016-03-30 | 2017-10-20 | 松下知识产权经营株式会社 | 光检测装置以及光检测系统 |
| CN107958847A (zh) * | 2016-10-14 | 2018-04-24 | 株式会社迪思科 | 检查用晶片和检查用晶片的使用方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020157335A (ja) | 2020-10-01 |
| JP7289592B2 (ja) | 2023-06-12 |
| SG10202002175VA (en) | 2020-10-29 |
| KR20200115118A (ko) | 2020-10-07 |
| TW202036694A (zh) | 2020-10-01 |
| CN111745313A (zh) | 2020-10-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |