CN111716575A - Device and method for dividing brittle material substrate - Google Patents
Device and method for dividing brittle material substrate Download PDFInfo
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- CN111716575A CN111716575A CN202010104811.1A CN202010104811A CN111716575A CN 111716575 A CN111716575 A CN 111716575A CN 202010104811 A CN202010104811 A CN 202010104811A CN 111716575 A CN111716575 A CN 111716575A
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- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 26
- 238000003825 pressing Methods 0.000 claims abstract description 21
- 238000005452 bending Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 230000007547 defect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 3
- 229910001315 Tool steel Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
- B26F3/002—Precutting and tensioning or breaking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention provides a dividing device, which can prevent damage to the surface of a substrate during cutting and obtain high-quality products. The dividing device is provided with a pair of left and right fixed blades (1, 2) with corners (1a, 1b) formed on the edge of the substrate carrying surface, and a pressing blade (3), wherein the fixed blades are arranged at intervals and the corners are parallel to each other, the pressing blade is arranged to be capable of being pressed between the fixed blades, the dividing device is used for carrying a brittle material substrate (W) as a cutting object in a mode that a dividing line (S) formed on the surface of the substrate is parallel to the corners, and the corners of the fixed blades are chamfered with a micro radius of 0.05-0.2 mm.
Description
Technical Field
The present invention relates to a dividing apparatus for cutting a brittle material substrate along a dividing line (notch). The present invention particularly relates to a dividing apparatus for obtaining each element by cutting from a mother substrate of a very hard brittle material such as a SiC substrate (wafer) in a process of manufacturing the element (device) in which a pattern such as an electronic circuit is formed on a surface of the mother substrate.
Background
In the processing of cutting a brittle material substrate such as an Si substrate, the following methods are often used in the related art: a dividing line is formed on the surface of the substrate using a dicing wheel, a laser beam, or the like, and then an external force is applied along the dividing line from the surface opposite to the dividing line forming surface to bend the substrate, thereby cutting the substrate into unit substrates (elements).
Specifically, as shown in fig. 7, a pair of left and right stationary blades 11 and 12 having corner portions (edges) 11a and 12a formed at end edges thereof are arranged at a predetermined interval so that the corner portions are parallel to each other, a substrate W to be cut is placed on the stationary blades (substrate placing surface) so that a dividing line S is located at the center of the interval, a pressing blade 13 is pressed against the substrate W from above the dividing line, and the substrate W is bent by a bending moment generated by three-point support to be cut from the dividing line (see patent documents 1 and 2).
In order to cause the left and right stationary blades 11, 12 to function as fulcrums, in the prior art, the opposing corners (edges) 11a, 12a of the left and right stationary blades are sharpened and are substantially in point contact with the substrate W to be cut in a cross-sectional view. Accordingly, a bending moment supported at three points is effectively generated by the left and right stationary blades 11 and 12 and the pressing blade 13, and the substrate cutting efficiency is improved. The stationary blade and the pressing blade are made of cemented carbide or tool steel having excellent hardness and toughness.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-114138
Patent document 2: japanese patent laid-open publication No. 2016-043503
Disclosure of Invention
Technical problem to be solved
In recent years, as high precision and high functionality of semiconductor devices have been required, further improvements in quality and strength of substrates have been required. As a means for achieving this object, performance improvement is achieved by using SiC (silicon carbide) as a substrate material of a semiconductor device. The SiC substrate has a very high dielectric breakdown electric field strength and high pressure resistance as compared with the Si substrate, and can realize high precision and high functionality with a thin film.
However, SiC is a very hard material. Therefore, if a dividing device that sharpens the corners (edges) of the pair of left and right stationary blades as fulcrums is used to cut the SiC substrate and the mother substrate is repeatedly cut by bending moments supported at three points by the left and right stationary blades and the pressing blade so that loads are concentrated on the tips of the left and right stationary blades, minute damage occurs to the edge portions of the stationary blades, and a defect such as a knife edge occurs.
In a mother substrate (wafer) before being divided, a thin resin protective film (resin protective film such as PET) is bonded to a surface of a device on which an electronic circuit and the like are formed, and the device is cut by the bending moment supported at three points described above with the surface facing downward. The damage may damage the resin protective film or damage the surface of the device on which the electronic circuit or the like is formed after the resin protective film is damaged. Since a device including an electronic circuit is a very precise and highly precise composition, even a minute damage causes a significant defect, and a reduction in yield is significantly affected.
Accordingly, an object of the present invention is to solve the above-described problems and provide a dividing apparatus capable of suppressing generation of damage when cutting a substrate and obtaining a high-quality product.
(II) technical scheme
In order to solve the above problems, the present invention describes the following means. That is, the dividing device of the present invention is a dividing device for a brittle material substrate, including a pair of left and right stationary blades having corner portions formed on end edges of a substrate mounting surface, the pair of left and right stationary blades being arranged at a distance from each other and the corner portions being parallel to each other, and a pressing blade arranged to be capable of being pressed between the pair of left and right stationary blades, the dividing device mounting a brittle material substrate to be cut on the substrate mounting surface such that a dividing line formed on a surface of the brittle material substrate is parallel to the corner portions at a position between the pair of left and right stationary blades, and pressing the pressing blade between the pair of left and right stationary blades to bend the brittle material substrate for division,
the corners of the pair of left and right stationary blades are rounded (り is defined as アール plane).
The radius of the rounded chamfer at the corner of the pair of left and right stationary blades may be formed to be a very small radius of 0.05 to 0.2mm (preferably 0.08 to 0.15mm, and particularly preferably 0.1 ± 0.025 mm). The interval between the corners of the pair of left and right stationary blades may be 1/2 to 3/4 times (1 to 1.5 times the size of the element) the interval between the dividing lines on both sides adjacent to the dividing line to be divided.
In another aspect, the dividing method of the present invention is a dividing method for dividing a brittle material substrate along a dividing line,
the method includes the steps of using a pair of left and right stationary blades having chamfered corners (for example, with a small radius of 0.05 to 0.2 mm) formed on end edges of a substrate mounting surface, arranging the stationary blades so as to be spaced apart from each other and so as to make the corners parallel to each other, mounting the brittle material substrate on the substrate mounting surface so that a dividing line of the brittle material substrate is parallel to the corners at a position between the pair of left and right stationary blades, pressing a pressing blade arranged so as to be capable of being pressed between the pair of left and right stationary blades, and bending and dividing the brittle material substrate.
Here, the SiC substrate may be divided as a brittle material substrate.
(III) advantageous effects
In the dividing device of the present invention, since the corners of the pair of right and left stationary blades are chamfered with a small radius, even when cutting a very hard substrate, the load during cutting can be dispersed without concentrating on the corners, and the occurrence of a damaged portion due to a corner defect can be suppressed, whereby damage of the cut product due to damage of the stationary blades can be suppressed, and a high-quality product can be provided. Further, since the chamfer of the corner is formed with a very small radius (R) of 0.05 to 0.2mm, the function as a fulcrum of the bending moment generated by three-point support is not impaired.
Drawings
FIG. 1 is a sectional view showing a stationary blade part of the dividing apparatus of the present invention.
Fig. 2 is a perspective view showing a substrate (wafer) to be cut.
Fig. 3 is a graph showing the cutting results using a conventional stationary blade.
FIG. 4 is a graph showing the cutting results using the stationary blade of the present invention.
Fig. 5 is a plan view showing an example of generation of damage in the cut semiconductor element.
Fig. 6 is an enlarged perspective view of a simulation of a flaw generated at an edge of a conventional stationary blade.
Fig. 7 is a sectional view showing a conventional stationary blade portion.
Description of the reference numerals
L-spacing between stationary blades; a dividing line in the S1-X direction; a dividing line in the S2-Y direction; w-substrate (wafer); w1-semiconductor element; 1-fixing a blade; 1 a-a corner; 2-fixing the blade; 2 a-corner; 3-pressing the blade.
Detailed Description
Hereinafter, an embodiment of the dividing device of the present invention will be described in detail with reference to the accompanying drawings. In the present embodiment, as shown in fig. 2, an SiC wafer (hereinafter, simply referred to as a substrate) W having a device surface of an electronic circuit or the like protected by a thin resin protective film on one surface is used as an example of a mother substrate to be cut. A plurality of dividing lines (cutting lines) S1 and S2 intersecting each other in the X-Y direction are processed in a grid pattern on the substrate W in the preceding step, and the substrate W is cut along the dividing lines S1 and S2 by the cutting device of the present invention, whereby each semiconductor element W1 as a product is cut out.
Fig. 1 shows a cutting device of the present invention. The cutting device includes a pair of left and right stationary blades 1, 2 and a pressing blade 3, the stationary blades 1, 2 are arranged in parallel with a predetermined interval in a direction of a dividing line of a substrate W to be cut, and the pressing blade 3 is arranged to be movable up and down by an elevating mechanism (not shown) at an upper position in the middle of the left and right stationary blades 1, 2 and to be lowered between the stationary blades 1, 2. The stationary blades 1, 2 and the pressing blade 3 are made of cemented carbide, tool steel, or the like excellent in hardness and toughness.
The respective stationary blades 1, 2 have corner portions 1a, 2a at the intersection of the vertical and horizontal surfaces intersecting each other, and the corner portions 1a, 2a are chamfered with a small radius (R) of 0.05 to 0.2mm (preferably 0.08 to 0.15 mm).
For example, when cutting out a 2 mm-long square semiconductor element W1, the distance L between the left and right stationary blades 1 and 2 is 2 to 3 mm.
When cutting the substrate W, the substrate W is placed on the stationary blades 1 and 2 so that the device surface faces downward and the dividing line in the X direction or the Y direction, for example, the dividing line S1 in the X direction faces downward at the center position of the interval L, the pressing blade 3 which can be raised and lowered is pressed into the substrate W from above the dividing line, and the substrate W is bent by the bending moment generated by the three-point support and cut off from the dividing line S1. Subsequently, the substrate W is cut along the dividing line S2 in the Y direction in the same manner as described above, and the semiconductor element W1 is cut out as a product. In this cutting, since the radius (R) of the corner portions 1a, 2a of the stationary blade is extremely small, such as 0.05 to 0.2mm, the function of the corner portions 1a, 2a as the fulcrum of the bending moment generated by the three-point support is not impaired.
The inventors of the present invention performed a substrate cutting experiment using the stationary blade of the present invention and a conventional stationary blade. A SiC wafer having a diameter of 150mm and a thickness of 0.2mm was used as a substrate, and about 5000 square semiconductor elements each having a side of 2mm could be cut out from such a single wafer. The wafer was cut into 20 pieces, and 100 pieces of semiconductor elements W1 cut out from the last wafer were picked up, and the presence or absence of damage was verified. In this case, the radius (R) of the corner of the stationary blades 1 and 2 of the present invention is 0.1mm, and the interval L between the left and right stationary blades is 2.5 mm.
Fig. 3 shows the results of the cutting experiment using the conventional stationary blade, and fig. 4 shows the results of the cutting experiment using the stationary blade according to the present invention. The "damage aligned in the lateral direction" in fig. 3 (a) and 4 (a) refers to the damage K1 that is generated by contact with one stationary blade arranged in the Y direction when the semiconductor element W1 is cut in the Y direction shown in fig. 5, and the "damage aligned in the vertical direction" in fig. 3 (b) and 4 (b) refers to the damage K2 that is generated by contact with the stationary blade when the semiconductor element W is cut in the X direction.
In the figure, for example, it is shown that: the number of damages arranged in the lateral direction on the semiconductor element located at the coordinate points of X1-Y1 in (a) of fig. 3 is 10, and the number of damages arranged in the longitudinal direction on the semiconductor element located at the coordinate points of X5-Y6 in (b) of fig. 3 is 12.
From the experimental results, when 100 cut semiconductor elements were cut by the conventional method (without forming the minute R), 441 horizontal damages and 987 vertical damages were generated, and the total was 1428 damages, whereas when cut by the method of the present invention (forming the minute R), almost no damages were found, and only two horizontal damages were generated, and high-quality semiconductor elements could be obtained.
After the cutting experiment, the fixed blades were inspected. Fig. 6 is an enlarged perspective view of a test result of a conventional stationary blade, and it is confirmed that a minute flaw such as a defect shown in the figure is generated in a corner (edge) of the stationary blade. On the other hand, no damage such as a defect was found at all in the corner of the stator blade of the present invention.
Since the corners 1a and 2a of the stationary blade are chamfered with a small radius (R) in this way, even when a very hard substrate such as an SiC wafer is cut, the load at the time of cutting can be dispersed, and the occurrence of a damaged portion such as a chip at the corner can be suppressed. Therefore, damage of the cut product due to damage of the stationary blade can be suppressed, and a high-quality product can be obtained. Moreover, since the chamfer of the corner is formed with a very small radius (R) of 0.08 to 0.15mm, the function as a fulcrum of the bending moment generated by three-point support is not impaired.
Although the exemplary embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example, the substrate to be cut may be a substrate other than the SiC wafer shown in the above embodiment. In addition, in the present invention, appropriate modifications and changes can be made without departing from the scope of the claims to achieve the object.
Industrial applicability
The present invention is suitable for use as a dividing device for cutting a brittle material substrate having high hardness, such as an SiC wafer, along a dividing line.
Claims (5)
1. A dividing apparatus for a brittle material substrate,
which comprises a pair of left and right fixed blades having corners formed on the edge of the substrate mounting surface, and a pressing blade,
the pair of left and right stationary blades are arranged at a distance from each other and the corner portions are parallel to each other, the pressing blade is arranged to be capable of being pressed between the pair of left and right stationary blades,
the dividing device is used for placing a brittle material substrate as a cutting object on the substrate placing surface in a way that a dividing line formed on the surface of the brittle material substrate is parallel to the corner part at a position between the left and right fixed blades,
and the pressing blade is pressed between the pair of left and right fixed blades to bend the brittle material substrate for division,
the corners of the pair of left and right stationary blades are rounded.
2. The segmenting device of claim 1,
the radius of the arc chamfer of the corner is 0.05-0.2 mm.
3. The segmenting device of claim 1 or 2,
the interval between the corners of the pair of left and right stationary blades is 1/2-3/4 times the interval between the dividing lines adjacent to the dividing line to be divided.
4. A method for dividing a brittle material substrate along a dividing line, wherein,
using a pair of left and right stationary blades having rounded corners formed on the end edge of the substrate mounting surface, and arranging the stationary blades at intervals and with the corners parallel to each other,
placing the brittle material substrate on the substrate placement surface such that the dividing line of the brittle material substrate is parallel to the corner portion at a position between the pair of left and right stationary blades,
and pressing a pressing blade, which is arranged to be capable of being pressed between the pair of left and right fixed blades, and bending the brittle material substrate to divide the brittle material substrate.
5. The method of dividing a brittle material substrate according to claim 4, characterized in that the brittle material substrate is an SiC substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-052048 | 2019-03-20 | ||
| JP2019052048A JP2020151929A (en) | 2019-03-20 | 2019-03-20 | Break device and break method for brittle material substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111716575A true CN111716575A (en) | 2020-09-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010104811.1A Withdrawn CN111716575A (en) | 2019-03-20 | 2020-02-20 | Device and method for dividing brittle material substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2020151929A (en) |
| KR (1) | KR20200112655A (en) |
| CN (1) | CN111716575A (en) |
| TW (1) | TW202040656A (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3792508B2 (en) * | 2000-12-19 | 2006-07-05 | 三星ダイヤモンド工業株式会社 | Method for dividing bonded brittle substrates |
| JP4379807B2 (en) * | 2004-10-26 | 2009-12-09 | 日本電気硝子株式会社 | Method and apparatus for cutting and separating glass plate |
| JP2007302543A (en) * | 2006-05-15 | 2007-11-22 | Sharp Corp | Apparatus for severing substrate and method for making display device using the same |
| JP2009095901A (en) * | 2007-10-15 | 2009-05-07 | Seiko Epson Corp | Method and device for parting bonded substrate |
| ITTO20111115A1 (en) * | 2011-12-05 | 2013-06-06 | Biesse Spa | MACHINE AND PROCEDURE TO PERFORM TRUNCING OPERATIONS ON A LAMINATED GLASS SHEET ALONG A PREDETERMINED TRAJECTORY |
| JP2016040079A (en) * | 2014-08-12 | 2016-03-24 | 三星ダイヤモンド工業株式会社 | Segmentation method and segmentation apparatus for brittle material substrate |
| JP2016043503A (en) | 2014-08-20 | 2016-04-04 | 三星ダイヤモンド工業株式会社 | Dividing method of brittle material substrate, substrate holding member for dividing brittle material substrate and frame body for stretching adhesive film used upon division of brittle material substrate |
| JP2017114138A (en) | 2017-03-29 | 2017-06-29 | 三星ダイヤモンド工業株式会社 | Holding member for breaking |
-
2019
- 2019-03-20 JP JP2019052048A patent/JP2020151929A/en active Pending
-
2020
- 2020-02-11 TW TW109104170A patent/TW202040656A/en unknown
- 2020-02-14 KR KR1020200018375A patent/KR20200112655A/en unknown
- 2020-02-20 CN CN202010104811.1A patent/CN111716575A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020151929A (en) | 2020-09-24 |
| KR20200112655A (en) | 2020-10-05 |
| TW202040656A (en) | 2020-11-01 |
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