CN110634736A - Method for processing workpiece - Google Patents
Method for processing workpiece Download PDFInfo
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- CN110634736A CN110634736A CN201910519907.1A CN201910519907A CN110634736A CN 110634736 A CN110634736 A CN 110634736A CN 201910519907 A CN201910519907 A CN 201910519907A CN 110634736 A CN110634736 A CN 110634736A
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000002093 peripheral effect Effects 0.000 claims abstract description 73
- 238000005520 cutting process Methods 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims abstract description 25
- 238000003754 machining Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 115
- 230000001681 protective effect Effects 0.000 description 9
- 238000003672 processing method Methods 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Provided is a method for processing a workpiece, which can identify the crystal orientation of a wafer (plate-shaped workpiece) even if the outer periphery of the wafer is trimmed. In the outer peripheral edge removing step of the machining method, the outer peripheral edge (7) of the front surface (2a) is cut while the cutting tool is oscillated in the radial direction of the wafer (1), so that the front surface (2a) has an elliptical shape. In the outer peripheral edge removal step, the cutting tool is oscillated such that the short side (L2) of the front surface (2a) having an elliptical shape extends along the direction in which the notch (9) indicating the crystal orientation of the wafer (1) extends. Therefore, the elliptical shape of the front surface (2a) corresponds to the crystal orientation of the wafer (1). Then, the entire wafer (1) is formed into an elliptical shape as the shape of the front surface (2a) by a grinding step after the outer peripheral edge removing step. Therefore, the crystal orientation of the wafer (1) can be determined on the wafer (1) based on the elliptical shape.
Description
Technical Field
The present invention relates to a method for processing a workpiece.
Background
Some plate-shaped workpieces such as wafers have chamfers formed on the outer periphery thereof from the front surface to the back surface. When such a plate-shaped workpiece is thinned to a thickness of half or less, a so-called sharp edge is formed on the outer periphery, and the plate-shaped workpiece may be damaged. In order to prevent this, a technique of thinning a plate-shaped workpiece after trimming the outer periphery of the plate-shaped workpiece and removing the chamfer is known (for example, see patent document 1).
Further, a notch indicating a crystal orientation may be formed in the plate-shaped workpiece. The notch is used as a mark when dividing a plate-shaped workpiece into devices, for example (see patent document 2, for example). The notch shape is determined by SEMI specifications, which are industry standard specifications, for example. The plate-like workpiece having the notch formed therein is also trimmed at its outer periphery to remove the chamfer, and then thinned.
Patent document 1: japanese patent laid-open No. 2000-173961
Patent document 2: japanese laid-open patent publication No. 2004-198264
However, in the trimmed plate-like workpiece, the notch becomes smaller or disappears after thinning. Therefore, it is difficult to accurately detect the crystal orientation of the plate-shaped workpiece in the subsequent process.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object thereof is to enable recognition of the crystal orientation of a plate-shaped workpiece even if the outer periphery of the plate-shaped workpiece is trimmed.
A method of processing a workpiece according to the present invention is a method of processing a workpiece having a front surface on which devices are formed in regions defined by a plurality of planned dividing lines formed in a lattice shape, the method including: a holding step of holding the back surface of the workpiece by a holding table so that the front surface of the workpiece is exposed; an outer peripheral edge removing step of cutting the outer peripheral edge of the workpiece while changing a cutting width by causing a cutting tool to cut into the outer peripheral edge of the front surface of the workpiece and rotating the holding table while swinging the cutting tool in a radial direction of the workpiece after the holding step is performed; a front surface protecting step of covering a region of the front surface of the workpiece, in which the device is formed, with a front surface protecting member after the peripheral edge removing step is performed; and a grinding step of grinding the back surface of the workpiece with a grinding wheel to thin the workpiece to a predetermined thickness after the front surface protecting step is performed, wherein the outer peripheral edge removing step cuts the outer peripheral edge of the front surface of the workpiece while changing the cutting width, and removes the outer peripheral edge so that the front surface of the workpiece has an elliptical shape corresponding to the crystal orientation of the workpiece, thereby allowing the crystal orientation of the workpiece to be recognized by the elliptical shape.
In the machining method of the present invention, in the outer peripheral edge removing step, the outer peripheral edge of the front surface of the workpiece is cut while changing the cutting width. Thereby, the outer peripheral edge is removed from the front surface of the workpiece, and the front surface of the workpiece has an elliptical shape corresponding to the crystal orientation of the workpiece. Then, the outer peripheral edge of the back surface of the workpiece is also ground (removed) by the grinding step after the outer peripheral edge removing step, and therefore the entire workpiece has an elliptical shape as a front surface shape. Therefore, even if the notch formed in the outer peripheral edge of the workpiece disappears after the grinding step, the crystal orientation of the workpiece can be determined from the elliptical shape of the workpiece (for example, the extending direction of the major axis or the minor axis).
Drawings
Fig. 1 is a perspective view showing a wafer as an example of a workpiece according to the present embodiment.
Fig. 2 is a cross-sectional view of the wafer shown in fig. 1.
Fig. 3 is a perspective view showing a wafer held by the holding table and undergoing dressing.
Fig. 4 is a perspective view showing the front surface of the wafer after the outer peripheral edge removal step.
Fig. 5 is a cross-sectional view showing a wafer whose front surface is covered with a front surface protective tape.
Fig. 6 is a perspective view showing the grinding apparatus.
Fig. 7 is a sectional view showing a grinding step.
Fig. 8 is a perspective view showing the wafer after the grinding step.
Fig. 9 (a) and 9 (b) are plan views showing other examples of the front surface shape of the wafer after the outer peripheral edge removing step.
Description of the reference symbols
1: a wafer; 2 a: a front side; 2 b: a back side; 3: dividing the predetermined line; 4: a device; 5: a device region; 6: a peripheral residual region; 7: an outer peripheral edge; 8: an outer periphery cutting portion; 9: a recess; 101: a holding table; 103: a cutting tool; 10: a front protection belt; 11: an adhesive layer; 200: a grinding device, a conveying/storing part; 201. 202: a table section; 203: a grinding section; 213: a robot arm portion; 221: rotating the working table; 222: a chuck table; 231: a rough grinding section; 232: a finish grinding section; 236: roughly grinding the grinding tool; 237: and (5) fine grinding tool.
Detailed Description
An embodiment of the present invention will be described in detail with reference to the accompanying drawings. First, a workpiece processed by the method for processing a workpiece (the present processing method) according to the present embodiment will be briefly described.
As shown in fig. 1, a wafer 1 as an example of a workpiece according to the present embodiment is, for example, a silicon substrate having a disk shape. A device region 5 and a peripheral remainder region 6 are formed on the front surface 2a of the wafer 1. In the device region 5, devices 4 are formed in respective regions defined by the grid-like lines to divide 3. The peripheral remainder region 6 surrounds the device region 5.
As shown in fig. 2, the back surface 2b of the wafer 1 does not have the device 4 and is a surface to be ground by a grinding wheel or the like. The outer peripheral edge 7 of the wafer 1 is chamfered in an arc shape from the front surface 2a to the back surface 2 b. In addition, in fig. 2, the devices 4 provided on the front surface 2a of the wafer 1 are omitted.
Further, as shown in fig. 1, a notch 9 is provided at the outer peripheral edge 7 of the wafer 1. The notch 9 is a mark indicating the crystal orientation of the wafer 1. That is, the wafer 1 of the present embodiment includes a semiconductor single crystal. In order to indicate the crystal orientation of the wafer 1, a notch 9 is provided in the outer peripheral edge 7 of the wafer 1. The notch 9 is used as a mark for aligning the orientation of the wafer 1 when the wafer 1 is divided into semiconductor chips, for example. The shape of the recess 9 is determined by SEMI specifications, which are industry standard specifications, for example. The notch 9 is, for example, a substantially triangular cutout portion provided in the outer peripheral edge 7 of the wafer 1 and extending toward the center of the wafer 1.
Next, the steps included in the present processing method will be described.
(1) Holding step
In the present processing method, first, the wafer 1 is held by the holding table 101. As shown in fig. 3, the back surface 2b of the wafer 1 is held by the holding table 101. Thereby, the front surface 2a of the wafer 1 is exposed. At this time, the holding table 101 sucks and holds the wafer 1 by sucking the wafer 1 placed on the holding table 101 from the back surface 2b side thereof by a suction source not shown, for example.
(2) Outer peripheral edge removing step
After the holding step is performed, the rotating cutting tool 103 is caused to cut into the outer peripheral edge 7 of the front surface 2a of the wafer 1, and the holding table 101 is rotated. Thereby, the front surface 2a side of the outer peripheral edge 7 of the wafer 1 is removed (trimmed). That is, the outer peripheral edge 7 of the front surface 2a of the wafer 1 is edge-trimmed. The cutting tool 103 used has a flat tip.
In this step, for example, the holding table 101 is disposed below the cutting tool 103, and the cutting tool 103 is lowered in a direction approaching the front surface 2a of the wafer 1 while rotating the cutting tool 103 in the arrow B direction, so that the edge of the cutting tool 103 cuts into the outer peripheral edge 7. Next, the holding table 101 is rotated in the arrow a direction. Then, as the cutting tool 103 descends, the outer peripheral edge 7 is gradually cut. Thereby, the outer peripheral edge 7 is edge-finished in a ring shape.
By this outer peripheral edge removing step, as shown in fig. 4, a part (front surface 2a side) of the outer peripheral edge 7 of the wafer 1 is removed to form an outer peripheral cut portion 8. As a result, the notch 9 disappears on the front surface 2a of the wafer 1.
In particular, in the present processing method, in the peripheral edge removing step, the peripheral edge 7 of the front surface 2a of the wafer 1 is cut (removed) while the cutting tool 103 is oscillated in the radial direction of the wafer 1. That is, the outer peripheral edge 7 is cut while changing the cutting width by moving the cutting tool 103 forward and backward in the direction of the rotation axis of the cutting tool 103. Thus, as shown in fig. 4, the front surface 2a of the wafer 1 has an elliptical shape having a major axis (long side) L1 and a minor axis (short side) L2. In the peripheral edge removing step, for example, the cutting tool 103 is oscillated twice (twice back and forth) in the radial direction of the wafer 1 every time the holding table 101 holding the wafer 1 is rotated 1 turn in order to make the front surface 2a elliptical.
In the outer peripheral edge removal step, in particular, as shown in fig. 4, the cutting tool 103 is oscillated to form the elliptical shape of the front surface 2a such that the short side L2 of the elliptical shape of the front surface 2a of the wafer 1 extends along the extending direction of the notch 9 (parallel to a straight line connecting the notch 9 and the center of the wafer 1).
In order to realize such a relationship between the elliptical shape and the position of the notch 9, the processing person who performs the outer peripheral edge removal step confirms the position of the notch 9 of the wafer 1 in advance. Here, since the notch 9 is a relatively small portion, the notch 9 may be difficult to visually recognize. In this case, the processing person can confirm the position of the notch 9 without directly viewing the notch 9. For example, the notch 9 sometimes extends in the arrangement direction of the devices 4 (parallel to the dividing lines 3). In this case, the worker can confirm the position of the notch 9 according to the arrangement direction of the devices 4.
In addition, the apparatus (cutting apparatus) for performing the outer peripheral edge removal step may have a camera system for photographing the notch 9 of the wafer 1 and displaying it to the processing person. In this case, the processing person can perform the outer peripheral edge removal step while confirming the position of the notch 9 using the display screen of the camera system. In addition, the notch 9 may also be detected by pattern matching processing of an image captured by a camera and an image including the notch 9 stored in advance.
(3) Front protection step
After the outer peripheral edge removing step is performed, the device region 5 of the front surface 2a of the wafer 1 where the devices 4 are formed is covered with a front surface protective tape 10 as a front surface protective member.
In this step, as shown in fig. 5, the front surface protection tape 10 is pasted to the front surface 2a of the wafer 1. The front side protective tape 10 protects the devices 4 formed on the front side 2a of the wafer 1. The front surface protection tape 10 has an area covering the entire front surface 2a of the wafer 1.
When the front surface protection tape 10 is bonded to the wafer 1, an adhesive is applied to the entire front surface 2a of the wafer 1, for example. The front surface protection tape 10 is pasted by the adhesive, so that the entire front surface 2a of the wafer 1 can be covered by the front surface protection tape 10. The adhesive includes, for example, a material (paste) having adhesion to the wafer 1 made of silicon. The front surface protective tape 10 is in close contact with the wafer 1 while absorbing irregularities generated by the devices 4. Thereby, the entire front surface 2a of the wafer 1 is covered by the front surface protective tape 10, thereby protecting the devices 4.
In the example shown in fig. 5, the front protective tape 10 is brought into close contact with the irregularities generated in the device 4 so as not to leave a space. However, the front protective tape 10 may be pasted so as to contact a part of the unevenness.
In the present embodiment, a resin may be used as a front surface protection member for protecting the device region 5 of the wafer 1. That is, the front surface protection step may include a resin coating step of coating the front surface 2a of the wafer 1 with a resin.
(4) Grinding step
After the front surface protection step is performed, the back surface 2b of the wafer 1 is ground by a grinding wheel to thin the wafer 1 to a predetermined thickness.
First, the structure of the grinding apparatus used in the grinding step will be described. The grinding apparatus 200 shown in fig. 6 is an apparatus for grinding the wafer 1. The grinding apparatus 200 includes a conveying/storing section 201, a table section 202, and a grinding section 203.
The carrying/housing section 201 houses the wafer 1 before and after grinding, and carries the wafer 1 between the table section 202 and it. The conveyance/storage section 201 includes: a 1 st cassette 211 for storing the wafer 1 before grinding; a 2 nd cassette 212 for storing the ground wafers 1; a robot arm (conveying member) 213 for conveying the wafer 1; an alignment portion 214 for aligning the center of the wafer 1 at a constant position; and a cleaning unit 215 that cleans the ground wafer 1.
The table section 202 includes a spin table 221 and 3 chuck tables (holding tables) 222 provided on the upper surface of the spin table 221. The chuck table 222 can revolve on the XY plane by the rotation of the rotary table 221 while holding the wafer 1 by suction. The rotary table 221 rotates the chuck table 222 to dispose the wafer 1 at a predetermined position of the grinding portion 203. Further, the 3 chuck tables 222 are rotatable.
The grinding portion 203 has a rough grinding portion 231 and a finish grinding portion 232. The rough grinding portion 231 includes a grinding wheel 235 rotatable together with the rotary shaft 233. A plurality of rough grinding stones 236 are annularly arranged on the bottom surface of the grinding wheel 235. The rough grinding grindstone 236 is a grindstone used in rough grinding, and for example, a grindstone contains relatively large abrasive grains. The grinding portion 203 includes a grinding feed portion 238 for grinding and feeding the rough grinding portion 231 in the Z-axis direction.
The fine grinding section 232 performs fine grinding for improving flatness of the wafer 1 thinned to about the finished thickness by rough grinding. The finish grinding portion 232 has the same structure as the rough grinding portion 231 except that it has a finish grinding wheel 237 instead of the rough grinding wheel 236. The finish grinding stone 237 contains abrasive grains having a smaller grain size than the abrasive grains contained in the rough grinding stone 236. The grinding portion 203 includes a grinding feed portion 239 for grinding and feeding the finish grinding portion 232 in the Z-axis direction.
Next, the operation of the grinding apparatus 200 in the grinding step will be described. First, the robot arm 213 takes out the wafer 1 before grinding from the 1 st cassette 211 and places it on the chuck table 222 of the table section 202. At this time, as shown in fig. 7, the front surface protective tape 10 of the wafer 1 is sucked and held by the chuck table 222. Thereby, the back surface 2b of the wafer 1 is exposed upward (Z direction).
Then, rough grinding is performed. That is, by rotating the rotary table 221 shown in fig. 6, the chuck table 222 holding the wafer 1 is moved to a position below the rough grinding section 231.
Then, as shown in fig. 7, the chuck table 222 is rotated in the arrow a direction, for example. The grinding wheel 235 of the rough grinding section 231 descends while rotating in the direction of arrow a. Then, the rough grinding whetstone 236 grinds the back surface 2b of the wafer 1 while pressing it. In this grinding, the back surface 2b of the wafer 1 is ground until the remaining outer peripheral edge 7 of the wafer 1 is removed and the rough grinding whetstone 236 reaches the outer peripheral cutting portion 8.
Then fine grinding is performed. That is, the spin table 221 shown in fig. 6 is rotated, and the chuck table 222 holding the wafer 1 is moved to a position below the finish grinding portion 232. The grinding wheel 235 of the finish grinding portion 232 descends while rotating, and the finish grinding wheel 237 performs finish grinding while pressing the back surface 2b of the wafer 1. In the finish grinding, the flatness of the back surface 2b is improved so that the entire back surface 2b of the wafer 1 has a substantially uniform thickness. The wafer 1 after finish grinding is removed from the chuck table 222 by the robot arm 213 and is stored in the 2 nd cassette 212.
As shown in fig. 8, since the outer peripheral edge 7 is removed from the wafer 1 in the grinding step, the notch 9 (see fig. 4) remaining on the back surface 2b side of the outer peripheral edge 7 also disappears. In the grinding step, since the back surface 2b of the wafer 1 is ground until the outer peripheral cutting portion 8 is reached, the entire wafer 1 has the shape of the front surface 2a before the grinding step (i.e., an elliptical shape).
Then, the wafer 1 is cut along the lines to divide 3 (see fig. 1) by a known method to form chips as a final product (a cutting step).
As described above, in the present processing method, in the outer peripheral edge removing step, the outer peripheral edge 7 of the front surface 2a of the wafer 1 is cut while the cutting tool 103 is oscillated in the radial direction of the wafer 1 (the position of the cutting tool 103 is changed in the radial direction of the wafer 1). That is, the outer peripheral edge 7 is cut while changing the cutting width. Thereby, the outer peripheral edge 7 is removed from the front surface 2a of the wafer 1, and the front surface 2a of the wafer 1 has an elliptical shape. In the outer peripheral edge removal step, as shown in fig. 4, the cutting tool 103 is oscillated such that the short side L2 of the elliptical shape of the front surface 2a of the wafer 1 extends along the extending direction of the notch 9 indicating the crystal orientation of the wafer 1 (the direction parallel to the straight line connecting the notch 9 and the center of the wafer 1). Therefore, the elliptical shape of the front surface 2a of the wafer 1 is a shape corresponding to the crystal orientation of the wafer 1.
Then, the outer peripheral edge 7 of the back surface 2b of the wafer 1 is also ground (removed) by the grinding step after the outer peripheral edge removing step, so that the entire wafer 1 has an elliptical shape as the shape of the front surface 2 a. Therefore, the crystal orientation of the wafer 1 can be determined (identified) from the elliptical shape of the wafer 1.
In the present embodiment, the outer peripheral edge removing step causes the short side L2 of the wafer 1 (front surface 2a) having an elliptical shape to be along the extending direction of the notch 9. However, the outer peripheral edge removing step is not limited to this, and may be performed so that the long side L1 of the wafer 1 (front surface 2a) having an elliptical shape extends along the extending direction of the notch 9. That is, the elliptical shape of the front surface 2a of the wafer 1 and the position of the notch 9 may have a predetermined relationship. In this case, the crystal orientation of the wafer 1 can be determined from the elliptical shape of the wafer 1 (front surface 2 a).
In the present embodiment, in the peripheral edge removing step, the front surface 2a of the wafer 1 is formed into an elliptical shape corresponding to the crystal orientation of the wafer 1. However, the front surface 2a of the wafer 1 may have another shape corresponding to the crystal orientation of the wafer 1. For example, as shown in fig. 9 (a) and (b), the front surface 2a of the wafer 1 may have a flat shape having a drop-shaped protrusion 301 or a gentle protrusion 302. In this structure, the positions and/or shapes of the projections 301 and the convex portions 302 correspond to the crystal orientation of the wafer 1. In this structure, after the grinding step, the entire wafer 1 has the shape of the protruding portion 301 and the convex portion 302 as in the front surface 2a shown in fig. 9 (a) and (b). Therefore, the crystal orientation of the wafer 1 can be determined (identified) from the protrusion 301 or the projection 302.
In the present embodiment, the shape of the front surface 2a of the wafer 1 after the outer peripheral edge removal step (the shape of the wafer 1 after the grinding step) is represented as an ellipse. The expression of the "ellipse" is not limited to a strict elliptical shape having two focal points, and includes any shape having symmetry (for example, primary symmetry or secondary symmetry) that can discriminate the crystal orientation of the wafer 1.
In the present embodiment, the wafer 1 is chamfered in an arc shape from the front surface 2a to the back surface 2b, and the outer peripheral edge 7 is edge-trimmed in a ring shape. However, the outer peripheral edge 7 to be finished is not formed only by chamfering. For example, when the outer peripheral edge 7 of the wafer 1 has a step, it is also preferable to trim the outer peripheral edge 7.
Claims (1)
1. A method for processing a workpiece having a front surface on which devices are formed in regions defined by a plurality of planned dividing lines formed in a lattice shape, the method comprising:
a holding step of holding the back surface of the workpiece by a holding table so that the front surface of the workpiece is exposed;
an outer peripheral edge removing step of cutting the outer peripheral edge of the workpiece while changing a cutting width by causing a cutting tool to cut into the outer peripheral edge of the front surface of the workpiece and rotating the holding table while swinging the cutting tool in a radial direction of the workpiece after the holding step is performed;
a front surface protecting step of covering a region of the front surface of the workpiece, in which the device is formed, with a front surface protecting member after the peripheral edge removing step is performed; and
a grinding step of grinding the back surface of the workpiece with a grinding wheel to reduce the thickness of the workpiece to a predetermined thickness after the front surface protection step is performed,
in the outer peripheral edge removing step, the outer peripheral edge of the front surface of the workpiece is cut while changing the cutting width, and the outer peripheral edge is removed so that the front surface of the workpiece has an elliptical shape corresponding to the crystal orientation of the workpiece, whereby the crystal orientation of the workpiece can be identified by the elliptical shape.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018118692A JP7068064B2 (en) | 2018-06-22 | 2018-06-22 | Processing method of work piece |
| JP2018-118692 | 2018-06-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110634736A true CN110634736A (en) | 2019-12-31 |
| CN110634736B CN110634736B (en) | 2023-08-04 |
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| CN201910519907.1A Active CN110634736B (en) | 2018-06-22 | 2019-06-17 | Method for processing object to be processed |
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| Country | Link |
|---|---|
| JP (1) | JP7068064B2 (en) |
| KR (1) | KR20200000337A (en) |
| CN (1) | CN110634736B (en) |
| TW (1) | TWI799604B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113510609A (en) * | 2021-07-12 | 2021-10-19 | 长鑫存储技术有限公司 | Wafer and wafer processing method |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403315B (en) * | 2020-03-03 | 2022-03-18 | 上海华力集成电路制造有限公司 | Wafer trimming device and method |
| USD969050S1 (en) * | 2020-12-03 | 2022-11-08 | Ralph Preston Kirtland | Vehicle bumper brace |
| JP2022139624A (en) | 2021-03-12 | 2022-09-26 | 株式会社ディスコ | Processing device and processing method |
| CN115132568A (en) * | 2021-03-25 | 2022-09-30 | 三美电机株式会社 | Method for manufacturing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH10256105A (en) * | 1997-03-11 | 1998-09-25 | Super Silicon Kenkyusho:Kk | Wafer with laser mark |
| JP2009064801A (en) * | 2007-09-04 | 2009-03-26 | Disco Abrasive Syst Ltd | Wafer |
| JP5352331B2 (en) * | 2009-04-15 | 2013-11-27 | ダイトエレクトロン株式会社 | Wafer chamfering method |
| JP2013115187A (en) * | 2011-11-28 | 2013-06-10 | Disco Abrasive Syst Ltd | Processing method of wafer |
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2018
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| JP2005093882A (en) * | 2003-09-19 | 2005-04-07 | Disco Abrasive Syst Ltd | Method for polishing wafer |
| CN101086975A (en) * | 2006-06-09 | 2007-12-12 | 株式会社迪斯科 | Sensing mechanism for crystal orientation indication mark of semiconductor wafer |
| JP2009283677A (en) * | 2008-05-22 | 2009-12-03 | Sumco Corp | Semiconductor wafer and method of manufacturing the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113510609A (en) * | 2021-07-12 | 2021-10-19 | 长鑫存储技术有限公司 | Wafer and wafer processing method |
| CN113510609B (en) * | 2021-07-12 | 2023-09-08 | 长鑫存储技术有限公司 | Wafer and wafer processing method |
Also Published As
| Publication number | Publication date |
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| TWI799604B (en) | 2023-04-21 |
| CN110634736B (en) | 2023-08-04 |
| JP2019220632A (en) | 2019-12-26 |
| KR20200000337A (en) | 2020-01-02 |
| TW202002093A (en) | 2020-01-01 |
| JP7068064B2 (en) | 2022-05-16 |
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