CN110335807A - A kind of silicon wafer cleaning method - Google Patents
A kind of silicon wafer cleaning method Download PDFInfo
- Publication number
- CN110335807A CN110335807A CN201910546947.5A CN201910546947A CN110335807A CN 110335807 A CN110335807 A CN 110335807A CN 201910546947 A CN201910546947 A CN 201910546947A CN 110335807 A CN110335807 A CN 110335807A
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- silicon wafer
- nozzle
- cleaned
- ozone water
- cleaning
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a kind of silicon wafer cleaning methods, it is cleaned including SC-1, Ozone Water cleaning, DIW cleaning, HF processing and dry five key steps of lifting, pure water overflow cleaning step after the cleaning of SC-1 in the prior art is replaced with into Ozone Water cleaning, silicon wafer is after SC-1 is cleaned, 5~7min of immersion in Ozone Water rinse bath is put into vertical state, the rapidly draining valve for opening slot bottom immediately carries out rapidly drain, and two jet pipes are opened simultaneously in drain, nozzle on jet pipe is uniform simultaneously to spray silicon wafer two sides, the water spray pressure of each nozzle is 0.2~0.3MPa, flow is 2~3l/min, 10~15cm is divided between silicon wafer and nozzle.By spraying so that the metal hydroxides complexion on silicon wafer is quickly aoxidized hydrate in a short time, the hydroxide flows to Ozone Water rinse bath bottom under the action of spraying liquid stream, and it is quickly discharged by rapidly draining valve, make it both without the residence time, also the chance that do not adhere to again, to realize the removal of metal hydroxides complexion.
Description
Technical field
The present invention relates to wafer cleaning technicals, and in particular to a kind of silicon wafer cleaning method.
Background technique
Semi-conductor silicon chip is the essential semiconductor material in the fields such as automobile, mobile phone, PC.It is light with semiconductor devices
Just change and concentration degree develops, the silicon wafer of basic material is also had higher requirement, especially in terms of cleaning, it is required that standard etc.
Grade is higher.Therefore, it is imperative to promote clean process capability in silicon wafer manufacturing engineering.
Silicon wafer in the fabrication process, is needed by process such as grinding, grindings, in processing, can use includes aluminium
With the lapping liquid of silicon bits, cause include metal grinding bits and polishing particles fine metal ion residues on the surface of silicon wafer,
It is difficult to remove when clean, influences the quality of silicon wafer.
As improved scheme, generally, attempt to use SC-1 (APM), SC-2 (HPM), interface when clean
The medical fluids such as activating agent and Ozone Water start the cleaning processing.Although metal ion and metal oxide can be removed from silicon wafer
Fall, but it is unobvious to metal hydroxides [M (OH) x]-complexion effect, it can not be completely removed, still remain in production
The surface of product silicon wafer.
For ion residues problem, the schemes of countermeasures that can be used at present is that metal ion filtering is installed on dipper
Device, but metal hydroxides complexion (aluminium and iron ion of metal hydroxides especially easy to form) can not effectively be gone
It removes, at present also it is not yet found that effect removal method.
Summary of the invention
The present invention is to carry out to solve above-mentioned technical problem, for the strong metal hydroxides complexion of adhesive force
Characteristic, efficiently uses soak with ozone solution and spray mode removes the metal hydroxides complexion of this difficult removal.
On current silicon wafer washing/cleaning equipment using the medical fluid processing of SC-1 etc. of alkalinity after, in next trough in order to
Remaining medical fluid is cleaned, can be put into the trough of pure water overflow.This kind of processing method to metal hydroxides without any effect,
Metal hydroxides can also maintain original state, and remain the surface for being adsorbed on silicon wafer.
The main object of the present invention is to prevent the generation of such absorption, SC-1 processing after first using ozone water spray with
Accelerate the oxidation process of metal hydroxides complexion, chemical principle is as follows:
Al(OH)4 -+O3→2Al(OH)3+H2O+2O2
By oxidation so that the charge property of silicon chip surface is partial to neutrality, the adsorption capacity to silicon wafer itself is on the one hand reduced,
On the other hand these metal ions can also be made to completely disengage the surface of silicon wafer by the mechanical impact force of spray.
The present invention improves the ozone sink that conventional overflow uses, and installs two jet pipes for having nozzle above,
Silicon wafer two sides are respectively in, rapidly draining valve is installed in slot bottom.When in use, silicon wafer be immersed in after Ozone Water trough end at once into
Row drain movement, and while carrying out drain Ozone Water in nozzle towards the uniform ejection in silicon wafer two sides.So, silicon wafer
On metal hydroxides complexion quickly aoxidized hydrate in a short time, hydroxide is with the medicine rapidly exhausted
Liquid is discharged rapidly towards outside slot.The tectonic association of ozone water spray and rapidly drain can more effectively prevent metal hydroxides again
It is attached to the surface of silicon wafer.
The ADVANCE electrical equipment industry Co., Ltd. of rapidly draining valve purchase from Japan in the present invention, model
QDR125F-V283。
Based on this, the present invention provides a kind of silicon wafer cleaning methods, including following cleaning step:
A, SC-1 is cleaned, and silicon wafer is successively cleaned in SC-1 rinse bath twice；
B, Ozone Water is cleaned
Silicon wafer after step A cleaning is put into 5~7min of immersion in Ozone Water rinse bath with vertical state, is then opened
The rapidly draining valve of slot bottom carries out rapidly drain, and opens simultaneously two jet pipes above rinse bath in drain, on jet pipe
Nozzle is uniform simultaneously to spray silicon wafer two sides, and the water spray pressure of each nozzle is 0.2~0.3MPa, and flow is 2~3l/
Min is divided into 10~15cm between silicon wafer and nozzle；
C, DIW is cleaned, and the silicon wafer after Ozone Water is cleaned is put into pure water overflow launder and cleans, and removal silicon chip surface is attached
Ozone Water；
D, HF is handled, will through step C, treated that silicon wafer is put into HF slot handles, remove the oxidation of silicon chip surface
Film is entered back into pure water slot and is finally cleaned；
E, drying is lifted, will be flowed in lifting dry slot through the silicon wafer after step D carrying out washing treatment, in normal temperature condition
It is lower that moisture remained on surface is dried by slowly lifting silicon wafer.
It preferably, further include auxiliary drying in silicon wafer cleaning method provided by the invention, it will be after step E be dry
Silicon wafer is dried silicon chip surface under the conditions of 60-65 DEG C, it is therefore intended that sufficiently does to the remaining moisture of silicon chip surface
It is dry.
Preferably, in silicon wafer cleaning method provided by the invention, in SC-1 cleaning solution used by step A, NH4OH、
H2O2And H2Volume ratio between O is 1:2:10~1:2:50.
Preferably, in silicon wafer cleaning method provided by the invention, in step B, ozone concentration in Ozone Water is 1~
100ppm, spray time are >=3 minutes.
Preferably, in silicon wafer cleaning method provided by the invention, in step B, nozzle there are five installations on every jet pipe,
When the shape of nozzle is fan-shaped, pressure of spraying water is 0.2MPa, and when the shape of nozzle is cone, pressure of spraying water is 0.3MPa, and two
The water spray of root jet pipe is 20~30l/min.
Preferably, in silicon wafer cleaning method provided by the invention, in step D, the volume ratio between HF and water is 1:500
~1:5000.
Beneficial guarantee of the invention and effect are as follows:
The present invention uses the step of soak with ozone solution adds spray after SC-1 cleaning, is first put into silicon wafer with vertical state
In Ozone Water rinse bath impregnate 5~7min, then open slot bottom rapidly draining valve carry out rapidly drain, and drain simultaneously
Two jet pipes above rinse bath are opened, the nozzle on jet pipe is uniform simultaneously to spray silicon wafer two sides, so that on silicon wafer
Metal hydroxides complexion quickly aoxidized hydrate in a short time, the hydroxide spray liquid stream effect
Under flow to Ozone Water rinse bath bottom, and be quickly discharged by rapidly draining valve.The setting of ozone water spray is so that hydroxide
Object is both without the residence time, the chance that also do not adhere to again, to realize the removal of metal hydroxides complexion.
In addition, the water spray pressure of each nozzle is 0.2~0.3MPa in the present invention, flow is 2~3l/min, silicon wafer and nozzle
Between be divided into 10~15cm so that spray power suffered by silicon wafer is moderate, the swing of silicon wafer will not be caused due to spray operation
Greatly, cause slot bottom bracket and silicon chip edge to generate scar or cause foreign matter to generate due to rubbing, while it is lossless to realize silicon wafer
Wound and foreign matter are removed.
Specific embodiment
Now in conjunction with embodiment, the present invention is described in detail, but implementation of the invention is not limited only to this.
The silicon wafer that need to be cleaned is put into scrubber, starts one-way flow, is started the cleaning processing as steps described below by slot, clearly
Wash journey is as shown in table 1:
1 Wafer Cleaning process of table
| Slot number | The mode of cleaning | Use medical fluid |
| 1 | SC-1 processing | NH4OH、H2O2 |
| 2 | SC-1 processing | NH4OH、H2O2 |
| 3 | Ozone water process | Ozone Water |
| 4 | DIW processing | DIW |
| 5 | HF processing | HF |
| 6 | DIW processing | DIW |
| 7 | Lift drying | ---- |
| 8 | Assist drying | ---- |
Each cleaning step is described as follows:
A, SC-1 is cleaned
Silicon wafer is successively cleaned in alkaline SC-1 rinse bath twice, removes metal particle.Used SC-
1 cleaning solution includes NH4OH、H2O2And HO2, the volume ratio between three is 1:2:10~1:2:50；
B, Ozone Water is cleaned
Silicon wafer after step A cleaning is put into the Ozone Water rinse bath that ozone concentration is 1~100ppm with vertical state
Middle immersion 5min, the rapidly draining valve for opening slot bottom immediately carries out rapidly drain, and opens simultaneously above rinse bath in drain
Two jet pipes.Nozzle on jet pipe is uniform simultaneously to be sprayed at least 3min, the water spray pressure of each nozzle to silicon wafer two sides
For 0.2~0.3MPa, flow is 2~3l/min, and 10~15cm is divided between silicon wafer and nozzle.
There are five nozzles for installation on every jet pipe, and when the shape of nozzle is fan-shaped, water spray pressure is 0.2MPa, when nozzle
When shape is cone, water spray pressure is 0.3MPa.The water spray of two jet pipes is 20~30l/min.The jet speed will not
Cause the swing of silicon wafer excessive, slot bottom bracket and silicon chip edge is caused to generate scar or since friction causes foreign matter to generate.
About ozone sink employed in the present embodiment, improved on the ozone sink that conventional overflow uses:
Two jet pipes for having nozzle are installed above slot, are respectively in silicon wafer two sides, rapidly draining valve, slot inside are in slot bottom installation
Ozone Water savings construction.The rapidly ADVANCE electrical equipment industry Co., Ltd. of draining valve purchase from Japan, model QDR125F-
V283。
C, DIW is cleaned, and the silicon wafer after Ozone Water is cleaned is put into pure water overflow launder and cleans, and removal silicon chip surface is attached
Ozone Water.
D, HF is handled, and is carried out in the HF slot for being 1:500~1:5000 by the concentration through step C treated silicon wafer is put into HF
Processing, removes the oxidation film of silicon chip surface, enters back into pure water slot and is finally cleaned.
E, drying is lifted, will be flowed in lifting dry slot through the silicon wafer after step D carrying out washing treatment, in normal temperature condition
It is lower that moisture remained on surface is dried by slowly lifting silicon wafer.
F, drying is assisted, the silicon wafer after step E is dry is dried silicon chip surface under the conditions of 60-65 DEG C, fills
Divide and the remaining moisture of silicon chip surface is dried.
After above-mentioned processing step, dry silicon wafer is transported scrubber automatically, terminates entire wash clean process.
In the present embodiment, Ozone Water spray groove is arranged in behind SC-1 alkalinity medical liquor treating trough, between two slots no longer
Pure water overflow launder is set.By spraying so that the metal hydroxides complexion on silicon wafer is quickly oxidized to hydrogen in a short time
Oxide, the hydroxide flow to Ozone Water rinse bath bottom under the action of spraying liquid stream, and fast by rapidly draining valve
Speed discharge.The setting of ozone water spray so that hydroxide both without the residence time, the chance that also do not adhere to again, to realize
The removal of metal hydroxides complexion.
The preferred embodiment of the present invention has been described in detail above, but the invention be not limited to it is described
Embodiment, those skilled in the art can also make various equivalent on the premise of not violating the inventive spirit of the present invention
Variation or replacement, these equivalent variation or replacement are all included in the scope defined by the claims of the present application.
Claims (6)
1. a kind of silicon wafer cleaning method, which comprises the steps of:
A, SC-1 is cleaned
Silicon wafer is successively cleaned in SC-1 rinse bath twice；
B, Ozone Water is cleaned
Silicon wafer after step A cleaning is put into 5~7min of immersion in Ozone Water rinse bath with vertical state, then opens slot bottom
Rapidly draining valve carry out rapidly drain, and open simultaneously two jet pipes above rinse bath in drain, the nozzle on jet pipe
Uniform simultaneously to spray to silicon wafer two sides, the water spray pressure of each nozzle is 0.2~0.3MPa, and flow is 2~3l/min, silicon
10~15cm is divided between piece and nozzle；
C, DIW is cleaned
Silicon wafer after Ozone Water is cleaned is put into pure water overflow launder and cleans, the Ozone Water of removal silicon chip surface attachment；
D, HF is handled
Will through step C, treated that silicon wafer is put into HF slot handles, remove the oxidation film of silicon chip surface, enter back into pure water slot
It is interior finally to be cleaned；
E, drying is lifted
It will be flowed in lifting dry slot through the silicon wafer after step D carrying out washing treatment, under normal temperature conditions by slowly lifting
Moisture remained on surface is dried in silicon wafer.
2. silicon wafer cleaning method according to claim 1, which is characterized in that further include:
Drying is assisted, the silicon wafer after step E is dry is dried silicon chip surface under the conditions of 60~65 DEG C.
3. silicon wafer cleaning method according to claim 1, it is characterised in that:
Wherein, in SC-1 cleaning solution used by step A, NH4OH、H2O2And H2Volume ratio between O is 1:2:10~1:2:
50。
4. silicon wafer cleaning method according to claim 1, it is characterised in that:
Wherein, in step B, the ozone concentration in Ozone Water is 1~100ppm, and spray time is >=3 minutes.
5. silicon wafer cleaning method according to claim 1, it is characterised in that:
Wherein, in step B, there are five nozzles for installation on every jet pipe, and when the shape of nozzle is fan-shaped, water spray pressure is
0.2MPa, when the shape of nozzle is cone, water spray pressure is 0.3MPa, and the water spray of two jet pipes is 20~30l/min.
6. silicon wafer cleaning method according to claim 1, it is characterised in that:
Wherein, in step D, the volume ratio between HF and water is 1:500~1:5000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910546947.5A CN110335807B (en) | 2019-06-24 | 2019-06-24 | Silicon wafer cleaning method |
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|---|---|---|---|
| CN201910546947.5A CN110335807B (en) | 2019-06-24 | 2019-06-24 | Silicon wafer cleaning method |
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| CN110335807A true CN110335807A (en) | 2019-10-15 |
| CN110335807B CN110335807B (en) | 2021-08-06 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111199874A (en) * | 2020-01-13 | 2020-05-26 | 天津中环领先材料技术有限公司 | Silicon wafer cleaning process |
| CN112928017A (en) * | 2021-04-02 | 2021-06-08 | 杭州中欣晶圆半导体股份有限公司 | Cleaning method for effectively removing metal on surface of silicon wafer |
| CN113394134A (en) * | 2021-05-11 | 2021-09-14 | 桂林芯隆科技有限公司 | Automatic liquid spraying device and method for chip scribing |
| CN113736580A (en) * | 2021-09-03 | 2021-12-03 | 上海中欣晶圆半导体科技有限公司 | Mixed acid cleaning solution for cleaning and polishing silicon wafer and cleaning method for polished silicon wafer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002100599A (en) * | 2000-09-21 | 2002-04-05 | Mitsubishi Materials Silicon Corp | Washing method for silicon wafer |
| TW200511436A (en) * | 2003-09-01 | 2005-03-16 | Macronix Int Co Ltd | Method to clean wafer surface by using free OH radicals in DI de-ionized water |
| JP2007150164A (en) * | 2005-11-30 | 2007-06-14 | Renesas Technology Corp | Substrate washing method |
| CN102064090A (en) * | 2010-10-15 | 2011-05-18 | 北京通美晶体技术有限公司 | Method for cleaning compound semiconductor chip |
| CN103270580A (en) * | 2010-12-16 | 2013-08-28 | 信越半导体股份有限公司 | Semiconductor wafer cleaning method |
| CN104299890A (en) * | 2014-10-09 | 2015-01-21 | 浙江大学 | Method for cleaning ferrotungsten metal ions on surface of silicon wafer |
-
2019
- 2019-06-24 CN CN201910546947.5A patent/CN110335807B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002100599A (en) * | 2000-09-21 | 2002-04-05 | Mitsubishi Materials Silicon Corp | Washing method for silicon wafer |
| TW200511436A (en) * | 2003-09-01 | 2005-03-16 | Macronix Int Co Ltd | Method to clean wafer surface by using free OH radicals in DI de-ionized water |
| JP2007150164A (en) * | 2005-11-30 | 2007-06-14 | Renesas Technology Corp | Substrate washing method |
| CN102064090A (en) * | 2010-10-15 | 2011-05-18 | 北京通美晶体技术有限公司 | Method for cleaning compound semiconductor chip |
| CN103270580A (en) * | 2010-12-16 | 2013-08-28 | 信越半导体股份有限公司 | Semiconductor wafer cleaning method |
| CN104299890A (en) * | 2014-10-09 | 2015-01-21 | 浙江大学 | Method for cleaning ferrotungsten metal ions on surface of silicon wafer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111199874A (en) * | 2020-01-13 | 2020-05-26 | 天津中环领先材料技术有限公司 | Silicon wafer cleaning process |
| CN112928017A (en) * | 2021-04-02 | 2021-06-08 | 杭州中欣晶圆半导体股份有限公司 | Cleaning method for effectively removing metal on surface of silicon wafer |
| CN113394134A (en) * | 2021-05-11 | 2021-09-14 | 桂林芯隆科技有限公司 | Automatic liquid spraying device and method for chip scribing |
| CN113394134B (en) * | 2021-05-11 | 2022-10-25 | 桂林芯隆科技有限公司 | Automatic liquid spraying device and method for chip scribing |
| CN113736580A (en) * | 2021-09-03 | 2021-12-03 | 上海中欣晶圆半导体科技有限公司 | Mixed acid cleaning solution for cleaning and polishing silicon wafer and cleaning method for polished silicon wafer |
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