CN103956904A - Fly-back electric power converter topological structure and control method thereof - Google Patents
Fly-back electric power converter topological structure and control method thereof Download PDFInfo
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- CN103956904A CN103956904A CN201410202147.9A CN201410202147A CN103956904A CN 103956904 A CN103956904 A CN 103956904A CN 201410202147 A CN201410202147 A CN 201410202147A CN 103956904 A CN103956904 A CN 103956904A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/70—Wind energy
- Y02E10/76—Power conversion electric or electronic aspects
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Abstract
The invention relates to an improved electric power converter topological structure and a control method thereof. The hardware topological structure comprises a direct-current voltage source Ed on the input side, a filtering and energy-storage capacitor Cd and a fly-back converter. The topological structure is characterized in that a capacitor C1 is connected to a proper position of the fly-back converter in parallel, and on-off control of semiconductor switches is conducted on this basis. By the adoption of the topological structure, inherent defects of traditional topological structures can be overcome, it is ensured that zero voltage switching-on and zero voltage switching-off can be achieved for all semiconductor switch devices, natural breakover and natural cutting-off of antiparallel power diodes can be achieved, and voltage and current stress, switching loss and electromagnetic interference on the outside of semiconductor devices are reduced. Thus, the topological structure can improve the conversion efficiency of the converter and the capacity of the converter for restraining the electromagnetic interference. The improved electric power converter topological structure and the control method thereof can be applied to DC-DC conversion as well as DC-AC conversion such as photovoltaic power generation, wind power generation, fuel-cell power generation and communication power supplies.
Description
Technical field
The present invention relates to a kind of topological structure and control method thereof of improved power converter, relate in particular to topological structure and the control method thereof of DC-DC converter or the DC-AC converter of a kind of high efficiency, low electromagnetic interference, can be used for photovoltaic generation, wind power generation, fuel cell power generation, communication power supply, described generating comprises generates electricity by way of merging two or more grid systems and Independent Power Generation.
Background technology
In recent years, along with developing rapidly of new forms of energy and environmental protection energy exploitation and application, certification authority of international community is more and more stricter to the performance requirement of power converter, commercial competition is also more and more fierce, particularly the field such as photovoltaic generation, wind power generation, fuel cell power generation, communication power supply, active power filtering, very strict to the restriction of the conversion efficiency of power converter and electromagnetic interference to external world thereof.
As shown in Figure 1, it can realize semiconductor switch device V to the topological structure of traditional inverse-excitation type power converter
1, V
2no-voltage open-minded, but have, can not realize the defect that no-voltage is turn-offed, it is hard when turn-offing the turn-off power loss of proximity switch device and turn-offing by the caused electromagnetic interference of peak voltage, and and V
1, V
2diode D in parallel
1, D
2also bearing the counter voltage of forcing conducting and sharply rising impacts.Therefore the conversion efficiency of traditional inverse-excitation type power converter is relatively low, and the electric current and voltage stress that semiconductor device bears and external electromagnetic interference are all larger.
Summary of the invention
In view of the existing defect of above-mentioned traditional inverse-excitation type power converter, the present invention proposes a kind of topological structure and control method thereof of improved power converter, to further improving the electric current and voltage stress of conversion efficiency, inhibition electromagnetic interference and the semiconductor device of converter.
Above-mentioned first object of the present invention, a kind of topological structure of inverse-excitation type power converter, its feature scheme is: the input side DC power supply E of described topological structure
dpositive pole and filtering energy storage capacitor C
done end, capacitor C
2one end, one end of transformer T armature winding be connected; DC power supply E
dnegative pole and filtering energy storage capacitor C
dthe other end, semiconductor switch device V
2source electrode and diode D
2anode be connected; Capacitor C
2the other end and semiconductor switch device V
1drain electrode and diode D
1negative electrode be connected to A point; Semiconductor switch device V
1source electrode and diode D
1anode, the other end of transformer T armature winding, semiconductor switch device V
2drain electrode, diode D
2negative electrode be connected to B point; The Same Name of Ends of transformer T armature winding and secondary winding different and with semiconductor switch device V
2form inverse-excitation type power converter; One end of transformer T secondary winding and diode D
3anode be connected; The other end of transformer T secondary winding and filter capacitor C
3one end be connected as the negative pole of converter output; Diode D
3negative electrode and filter capacitor C
3the other end be connected as the positive pole of converter output; Between described A point and B point and be connected with capacitor C
1.
Further, described semiconductor switch device V
1with semiconductor switch device V
2for MOSFET or IGBT, described diode D
1, diode D
2for diode in the body of semiconductor switch device or external diode.
Further, described semiconductor switch device V
1with semiconductor switch device V
2for SCR or GTO, described diode D
1, diode D
2for external diode.
Further, described diode D
3for external diode or MOSFET.
Above-mentioned second object of the present invention, a kind of control method of inverse-excitation type power converter, realizes based on above topology structure, and its feature scheme is: at semiconductor switch device V
2turn-off seasonal capacitor C
1first electric discharge; Work as U
c1=0 o'clock diode D
1start and realize nature conducting, making semiconductor switch device V around here
1realize no-voltage open-minded, and capacitor C
2there is resonance together with the leakage inductance of transformer T armature winding and magnetizing inductance; When resonance current opposite direction, make again semiconductor switch device V
1turn-off, based on capacitor C
1at semiconductor switch device V
1u has no progeny in pass
c1from zero, progressively rise, semiconductor switch device V
1for no-voltage is turn-offed and diode D
1realize nature cut-off; Along with U
c1progressively rising, semiconductor switch device V
2terminal voltage progressively drop to zero; While is diode D under the effect of reverse resonance current
2realize nature conducting, this seasonal semiconductor switch device V
2realize no-voltage open-minded; As semiconductor switch device V
2during shutoff, based on capacitor C
1the clamping action of upper voltage, semiconductor switch device V
2terminal voltage along with capacitor C
1electric discharge U
v2from zero progressively rising, realize no-voltage and turn-off, diode D
2realize nature cut-off.
The application of the improved topological structure of the present invention and control method thereof, the outstanding effect that compares to prior art is: it can overcome the inherent shortcoming in conventional topologies structure, guaranteed that all semiconductor switch devices can realize that no-voltage is opened, no-voltage is turn-offed, its inverse parallel power diode also can be realized nature conducting, cut-off naturally, has reduced electric current and voltage stress, switching loss and the external electromagnetic interference thereof of semiconductor device.This topological structure both can be used for DC-DC conversion, also can be used for DC-AC conversion, as photovoltaic generation, wind power generation, fuel cell power generation, communication power supply etc.
Accompanying drawing explanation
Fig. 1 is the topological structure of prior art.
Fig. 2 is topological structure of the present invention.
Fig. 3 is the equivalent electric circuit of Fig. 2.
Fig. 4 is control mode of the present invention.
Fig. 5 is the enlarged diagram of A part in Fig. 4.
Fig. 6 is the enlarged diagram of B part in Fig. 4.
Fig. 7-1-Fig. 7-8th, the schematic diagram of topological structure switch dynamic process different modalities of the present invention.
Embodiment
Below in conjunction with embodiment Fig. 2～Figure 78, the specific embodiment of the present invention is further elaborated, so that technical scheme of the present invention is easier to understand, grasp.
Fig. 3 is the equivalent electric circuit of Fig. 2, L in figure
lbe equivalent to the leakage inductance of transformer T armature winding, L
mbe equivalent to the magnetizing inductance of transformer T, capacitor C
2> C
1.From illustrating, the hardware topology structure of a kind of inverse-excitation type power converter of the present invention comprises the direct voltage source E of input side
d, filtering and storage capacitor
c dand inverse excitation type converter.Its particular circuit configurations is input side DC power supply E
dpositive pole and filtering energy storage capacitor C
done end, capacitor C
2one end, one end of transformer T armature winding be connected; DC power supply E
dnegative pole and filtering energy storage capacitor C
dthe other end, semiconductor switch device V
2source electrode and diode D
2anode be connected; Capacitor C
2the other end and semiconductor switch device V
1drain electrode and diode D
1negative electrode be connected to A point; Semiconductor switch device V
1source electrode and diode D
1anode, the other end of transformer T armature winding, semiconductor switch device V
2drain electrode, diode D
2negative electrode be connected to B point; The Same Name of Ends of transformer T armature winding and secondary winding different and with semiconductor switch device V
2form inverse-excitation type power converter; One end of transformer T secondary winding and diode D
3anode be connected; The other end of transformer T secondary winding and filter capacitor C
3one end be connected as the negative pole of converter output; Diode D
3negative electrode and filter capacitor C
3the other end be connected as the positive pole of converter output; Between A point and B point and be connected with capacitor C
1.
As such scheme further preferably, this semiconductor switch device V
1with semiconductor switch device V
2for MOSFET or IGBT, this diode D
1, diode D
2for diode in the body of semiconductor switch device or external diode.
Or, this semiconductor switch device V
1with semiconductor switch device V
2for SCR or GTO, this diode D
1, diode D
2for external diode.
In addition above-mentioned diode D,
3for external diode or MOSFET.
The control mode of topological structure of the present invention is summarized: at semiconductor switch device V
2turn-off seasonal capacitor C
1first electric discharge; Work as U
c1=0 o'clock diode D
1start and realize nature conducting, making semiconductor switch device V around here
1realize no-voltage open-minded, and capacitor C
2there is resonance together with the leakage inductance of transformer T armature winding and magnetizing inductance; When resonance current opposite direction, make again semiconductor switch device V
1turn-off, based on capacitor C
1at semiconductor switch device V
1u has no progeny in pass
c1from zero, progressively rise, semiconductor switch device V
1for no-voltage is turn-offed and diode D
1realize nature cut-off; Along with U
c1progressively rising, semiconductor switch device V
2terminal voltage progressively drop to zero; While is diode D under the effect of reverse resonance current
2realize nature conducting, this seasonal semiconductor switch device V
2realize no-voltage open-minded; As semiconductor switch device V
2during shutoff, based on capacitor C
1the clamping action of upper voltage, semiconductor switch device V
2terminal voltage along with capacitor C
1electric discharge U
v2from zero progressively rising, realize no-voltage and turn-off, diode D
2realize nature cut-off.
The control mode schematic diagram of topological structure of the present invention as shown in Figure 4, V in figure
g1, V
g2represent respectively V
1, V
2gate drive voltage; U
v1, I
v1represent respectively V
1terminal voltage and internal current; U
v2, I
v2represent respectively V
2terminal voltage and internal current; I
3represent diode D
3rectified current.For ease of observing, after partly being amplified, A in Fig. 4 is shown in Fig. 5, and B is shown in Fig. 6 after partly amplifying, and Fig. 7-1～7-8 is the switch dynamic process of topological structure of the present invention.Below with a switch periods (t
1～t
8) for the operating principle of example analysis main circuit topological structure, be divided into 8 mode: mode 0～mode 7.
Mode 0(t
1before): as shown in Fig. 5, Fig. 7-1, at t
1v before
2keep conducting state, filtering and storage capacitor C
d(and direct voltage source E
d) through L
l, L
m, V
2to transformer T energy storage, because T connects by reversed polarity (seeing the mark of Same Name of Ends "●" in figure), D
3cut-off, I
3be zero.
Mode 1(t
1～t
2): as shown in Fig. 5, Fig. 7-2, t
1constantly turn-off V
2, from Fig. 7-2, due to C
1the effect of clamping down on of upper voltage, has guaranteed V
1terminal voltage can only slowly rise, at U
v2< E
dduring this time, filtering and storage capacitor C
d(and direct voltage source E
d) still by mode 0 running, and C
1, C
2, L
l, L
mthere is series resonance, C
1through C
2, L
l, L
melectric discharge.E
d, C
1all make L
lon electric current continue to rise (in figure, separately not representing), but I
v2but decline very fast, to t
2constantly just drop to zero, so V
2with no-voltage, turn-off.
Mode 3(t
2～t
3): from Fig. 5, Fig. 7-2, Fig. 7-3, along with C
1electric discharge, due to U
c1clamping action, V
2terminal voltage continue to rise, work as V
2terminal voltage rise to U
v2> E
dtime, L
land L
mback-emf change direction, to t
3moment U
v1drop to zero, D
1realize nature conducting, stand in V
1external seeing, its electric current is a negative current, is the diode D in its body in fact
1in conducting.Now, C
2, L
l, L
mcontinue resonance, L
l, L
mback-emf to C
2charging, V
2terminal voltage rise to U
v1=E
d+ U
c2.
Mode 4(t
3～t
4): from Fig. 5, Fig. 7-4, at t
3～t
4during this time, semiconductor switch device V
1keep no-voltage always, triggering V around here
1, V
1realize no-voltage open-minded, V
1with D
1being together in parallel common is L
land L
mto C
2charging provides path, stands in V
1external seeing, this negative current is V
1with D
1electric current sum.
Mode 5(t
4～t
5): see Fig. 6, Fig. 7-5, along with L
l, L
mto C
2charging, U
c2constantly raise, L
l, L
mon electric current slowly reduce, to t
5this electric current just drops to zero constantly.D now
1naturally turn-off (in the time of effectively reducing strong shutoff because of the caused loss of reverse recovery current and reverse voltage stress), V
1electric current is reverse, C
2to L
l, L
mcharging, L
l, L
mon electric current by zero, progressively towards positive direction, increase, this energy is through the electromagnetic coupled of T, from the secondary side winding of T through D
3after rectification, be discharged into C
3on.
Mode 6(t
5～t
6): see shown in Fig. 6, Fig. 7-6 t
6constantly, turn-off semiconductor switch device V
1, obviously, due to C
1existence, V
1with no-voltage, turn-off.C
2through L
l, L
mto C
1charging, C
1terminal voltage rise gradually (therefore D
1the counter voltage of bearing is slowly rather than sharply to rise), U
v2decline gradually, T continues by secondary side winding and diode D
3energy is discharged into C
3on.
Mode 7(t
6～t
7): see Fig. 6, Fig. 7-7, work as U
v1rise to U
v1>=E
d+ U
c2time (as t
7constantly), U
v2also drop to zero, D
2start to enter no-voltage biasing, C
2stop C
1charging.L now
lthrough C
d(E
d), D
2, L
melectric discharge, D
2realize nature open-minded, D
3continuation is discharged into C by energy
3on.
Mode 8(t
7～t
8): see Fig. 6, Fig. 7-8, to t
8constantly, trigger semiconductor switch device V
2, obvious V
2with no-voltage, open D
3continuation is discharged into C by energy
3on.Work as L
lin electric current be discharged into zero after, V
2reverse current (be also D
2forward current) all drop to zero, V
2electric current start oppositely, and D
2realized natural shutoff (effectively reducing the loss and the reverse voltage stress that cause because of reverse recovery current while turn-offing), C
d(E
d) through L
l, L
m, V
2to T stored energy, the state of circuit is got back to mode 0 again.
To sum up to the general introduction of the topological structure of inverse-excitation type power converter of the present invention and control method thereof and in conjunction with the detailed description of embodiment, the innovation advantage that the present invention compares to prior art is just very remarkable: it can overcome the inherent shortcoming in conventional topologies structure, guaranteed that all semiconductor switch devices can realize that no-voltage is opened, no-voltage is turn-offed, its inverse parallel power diode also can be realized nature conducting, cut-off naturally, has reduced electric current and voltage stress, switching loss and the external electromagnetic interference thereof of semiconductor device.This topological structure both can be used for DC-DC conversion, also can be used for DC-AC conversion, as photovoltaic generation, wind power generation, fuel cell power generation, communication power supply etc.
Claims (5)
1. a topological structure for inverse-excitation type power converter, is characterized in that: the input side DC power supply E of described topological structure
dpositive pole and filtering energy storage capacitor C
done end, capacitor C
2one end, one end of transformer T armature winding be connected; DC power supply E
dnegative pole and filtering energy storage capacitor C
dthe other end, semiconductor switch device V
2source electrode and diode D
2anode be connected; Capacitor C
2the other end and semiconductor switch device V
1drain electrode and diode D
1negative electrode be connected to A point; Semiconductor switch device V
1source electrode and diode D
1anode, the other end of transformer T armature winding, semiconductor switch device V
2drain electrode, diode D
2negative electrode be connected to B point; The Same Name of Ends of transformer T armature winding and secondary winding different and with semiconductor switch device V
2form inverse-excitation type power converter; One end of transformer T secondary winding and diode D
3anode be connected; The other end of transformer T secondary winding and filter capacitor C
3one end be connected as the negative pole of converter output; Diode D
3negative electrode and filter capacitor C
3the other end be connected as the positive pole of converter output; Between described A point and B point and connect and establish capacitor C
1.
2. the topological structure of inverse-excitation type power converter according to claim 1, is characterized in that: described semiconductor switch device V
1with semiconductor switch device V
2for MOSFET or IGBT, described diode D
1, diode D
2for diode in the body of semiconductor switch device or external diode.
3. the topological structure of inverse-excitation type power converter according to claim 1, is characterized in that: described semiconductor switch device V
1with semiconductor switch device V
2for SCR or GTO, described diode D
1, diode D
2for external diode.
4. the topological structure of inverse-excitation type power converter according to claim 1, is characterized in that: described diode D
3for external diode or MOSFET.
5. a control method for inverse-excitation type power converter, realizes based on topological structure described in claim 1, it is characterized in that: at semiconductor switch device V
2turn-off seasonal capacitor C
1first electric discharge; Work as U
c1=0 o'clock diode D
1start and realize nature conducting, making semiconductor switch device V around here
1realize no-voltage open-minded, and capacitor C
2there is resonance together with the leakage inductance of transformer T armature winding and magnetizing inductance; When resonance current opposite direction, make again semiconductor switch device V
1turn-off, based on capacitor C
1at semiconductor switch device V
1u has no progeny in pass
c1from zero, progressively rise, semiconductor switch device V
1for no-voltage is turn-offed and diode D
1realize nature cut-off; Along with U
c1progressively rising, semiconductor switch device V
2terminal voltage progressively drop to zero; While is diode D under the effect of reverse resonance current
2realize nature conducting, this seasonal semiconductor switch device V
2realize no-voltage open-minded; As semiconductor switch device V
2during shutoff, based on capacitor C
1the clamping action of upper voltage, semiconductor switch device V
2terminal voltage along with capacitor C
1electric discharge U
v2from zero progressively rising, realize no-voltage and turn-off, diode D
2realize nature cut-off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410202147.9A CN103956904A (en) | 2014-05-14 | 2014-05-14 | Fly-back electric power converter topological structure and control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410202147.9A CN103956904A (en) | 2014-05-14 | 2014-05-14 | Fly-back electric power converter topological structure and control method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN103956904A true CN103956904A (en) | 2014-07-30 |
Family
ID=51334147
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|---|---|---|---|
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| CN106387614A (en) * | 2016-08-30 | 2017-02-15 | 魔水科技（北京）有限公司 | Swept-frequency magnetic-field sterilizing device and method for vegetable cleaning machine |
| CN106712472A (en) * | 2017-02-28 | 2017-05-24 | 华为技术有限公司 | Control method for ACF (Active Clamp Flyback) circuit and ACF circuit |
| CN106899219A (en) * | 2015-12-18 | 2017-06-27 | 虹冠电子工业股份有限公司 | For the power converter and its mode of operation of Switching Power Supply |
| CN107979288A (en) * | 2016-10-25 | 2018-05-01 | 万国半导体(开曼)股份有限公司 | Compulsory type Zero-voltage switch flyback converter |
| CN109391129A (en) * | 2018-09-25 | 2019-02-26 | 安克创新科技股份有限公司 | Active-clamp transformation system |
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Application publication date: 20140730 |