CN106387614A - Swept-frequency magnetic-field sterilizing device and method for vegetable cleaning machine - Google Patents
Swept-frequency magnetic-field sterilizing device and method for vegetable cleaning machine Download PDFInfo
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- CN106387614A CN106387614A CN201610780766.5A CN201610780766A CN106387614A CN 106387614 A CN106387614 A CN 106387614A CN 201610780766 A CN201610780766 A CN 201610780766A CN 106387614 A CN106387614 A CN 106387614A
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- A—HUMAN NECESSITIES
- A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
- A23N—MACHINES OR APPARATUS FOR TREATING HARVESTED FRUIT, VEGETABLES OR FLOWER BULBS IN BULK, NOT OTHERWISE PROVIDED FOR; PEELING VEGETABLES OR FRUIT IN BULK; APPARATUS FOR PREPARING ANIMAL FEEDING- STUFFS
- A23N12/00—Machines for cleaning, blanching, drying or roasting fruits or vegetables, e.g. coffee, cocoa, nuts
- A23N12/02—Machines for cleaning, blanching, drying or roasting fruits or vegetables, e.g. coffee, cocoa, nuts for washing or blanching
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Abstract
The invention belongs to the technical field of vegetable sterilization, and provides a swept-frequency magnetic-field sterilizing device and method for a vegetable cleaning machine. The device comprises a water inlet pipe, a cleaning pond and a water outlet pipe which are sequentially connected, wherein magnetic field coils and a pulsed magnetic field generator are arranged on the side wall of the cleaning pond, and the magnetic field coils are connected with the pulsed magnetic field generator; each of the magnetic field coils comprises a first magnetic field coil and a second magnetic field coil; and the pulsed magnetic field generator comprises a first circuit, a second circuit and an isolation frequency converter. According to the swept-frequency magnetic field sterilizing device and method for the vegetable cleaning machine disclosed by the invention, the sterilization efficiency of vegetables can be improved, the equipment loss and the equipment cost can be reduced, and the swept-frequency magnetic field sterilizing device is convenient for users to use.
Description
Technical field
The present invention relates to vegetable sterilization technology field is and in particular to a kind of beet washer swept magnetic field sterilizing unit and side
Method.
Background technology
Vegetable cleaning is one of requisite operation in fruits and vegetables and clean vegetables production.Existing vegetable washer passes through
Vibration spraying and cylinder can realize the automatic cleaning of vegetable.Vibration spraying formula vegetable washer has two service sinks, and vegetable is first
Reciprocating in vibration washing pond, tentatively cleaned, sprayed with clear water subsequently in spray pond, complete entirely to clean
Process.The cleaning way of traditional beet washer is only surface contaminants and the soil that can clean fruit and vegetable, to vegetable and fruit surface
The effect of antibacterial and pesticide is inconspicuous, and part beet washer increased ultrasonic technique and ozone technology.
But, the shortcoming of ultrasonic sterilization technology is：Supersound process amount is less, and ultrasonic sterilizing can't be used for industry at present
Metaplasia is produced, the impact to microorganism in food for the ultrasound wave, and its potential safety issue research ultimately resulting in is not enough.Therefore,
Large-scale application also has a certain distance in vegetable sterilization.During ultrasound wave independent role, easily effect is not thorough, and influence factor
More.If increase intensity, its sterilization rate can be improved, but the severe attrition of equipment can be caused.
The shortcoming of ozone sterilization technology is：The ozone that ozonator produces, has dense pungent taste, also nitrogen
Oxygen compound exists, and the comprehensive function to objectionable impurities and purification in the sterilization of fruit and vegetable and washings, removing water is inconspicuous, difficult
With the bigger bactericidal effect of the mutual synergism of formation and bactericidal range.
How to improve the germicidal efficiency of vegetable, reduce equipment loss and equipment cost, be user-friendly to, be this area skill
The problem of art personnel's urgent need to resolve.
Content of the invention
For defect of the prior art, the present invention provides a kind of beet washer swept magnetic field sterilizing unit and method, carries
The germicidal efficiency of high vegetable, reduces equipment loss and equipment cost, is user-friendly to.
In a first aspect, the present invention provides a kind of beet washer magnetic field sterilizing unit, this device includes：Water inlet pipe, service sink
And outlet pipe, wherein, service sink is provided with sterilization magnetic field generator.
The present invention provides another kind of beet washer swept magnetic field sterilizing unit, water inlet pipe that this device includes being sequentially connected,
Service sink and outlet pipe.The side wall of service sink is provided with field coil and pulsed magnetic generator, and field coil is sent out with magnetic field pulse
Raw device connects.Field coil includes the first field coil L1 and the second field coil L2.Pulsed magnetic generator includes the first electricity
Road, second circuit and isolation converter.First circuit includes input power (Vin), filter inductance (Ldc), the first metal-oxide-semiconductor
(S1), the second metal-oxide-semiconductor (S2), the first body diode (D1), the second body diode (D2), the first resonant capacitance (Cr1), second humorous
Shake electric capacity (Cr2), the first afterflow electric capacity (C1), the second afterflow electric capacity (C2), the first protection electric capacity (Ct1) and leakage inductance
(Ls).The positive pole of input power (Vin) is connected with the first end of filter inductance (Ldc), the negative pole of input power (Vin) respectively with
The drain electrode of the second metal-oxide-semiconductor (S2), the positive pole of the second body diode (D2), the first end of the second resonant capacitance (Cr2) and second continue
The first end of stream electric capacity (C2) connects.Second end of filter inductance (Ldc) drain electrode, the first body with the first metal-oxide-semiconductor (S1) respectively
The positive pole of diode (D1), the first end of the first resonant capacitance (Cr1), the source electrode of the second metal-oxide-semiconductor (S2), the second body diode
(D2) first end of negative pole, the second end of the second resonant capacitance (Cr2) and the first protection electric capacity (Ct1) connects.First metal-oxide-semiconductor
(S1) source electrode respectively with the negative pole of the first body diode (D1), the second end of the first resonant capacitance (Cr1) and the first afterflow electricity
The first end holding (C1) connects, and the second end of the first protection electric capacity (Ct1) is with the first field coil L1, leakage inductance (Ls) successively
Connect.Second circuit includes the second protection electric capacity (Ct2), the 3rd metal-oxide-semiconductor (S3), the 4th metal-oxide-semiconductor (S4), the 3rd body diode
(D3), the 4th body diode (D4), the 3rd resonant capacitance (Cr3), the 4th resonant capacitance (Cr4), the 3rd afterflow electric capacity (C3) and
4th afterflow electric capacity (C4) connects.The first end of the second field coil L2 and second protection electric capacity (Ct2) connects, the second protection electricity
Hold second end of (Ct2) respectively with the drain electrode of the 3rd metal-oxide-semiconductor (S3), the source electrode of the 4th metal-oxide-semiconductor (S4), the 3rd body diode (D3)
Positive pole, the negative pole of the 4th body diode (D4), the first end of the 3rd resonant capacitance (Cr3) and the 4th resonant capacitance (Cr4)
First end connects, source electrode negative pole, the 3rd resonant capacitance (Cr3) with the 3rd body diode (D3) respectively of the 3rd metal-oxide-semiconductor (S3)
The second end and the first end of the 3rd afterflow electric capacity (C3) connect, the drain electrode of the 4th metal-oxide-semiconductor (S4) respectively with the 4th body diode
(D4) first end of positive pole, the second end of the 4th resonant capacitance (Cr4) and the 4th afterflow electric capacity (C4) connects.Isolation converter
The first end of armature winding be connected with leakage inductance (Ls), the second end of the armature winding of isolation converter is continuous with first respectively
Second end of stream electric capacity (C1) and the second afterflow electric capacity (C2) connects, and isolates the first end of secondary windings and second magnetic of converter
Field coil L2 connect, isolation converter secondary windings the second end respectively with the 3rd afterflow electric capacity (C3) and the 4th afterflow electric capacity
(C4) the second end connects.
Further, input power (Vin) is DC source.
Further, the opening of the first metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2), the 3rd metal-oxide-semiconductor (S3) and the 4th metal-oxide-semiconductor (S4)
Pass frequency is 50KHz.
Based on above-mentioned any beet washer swept magnetic field sterilizing unit, further, beet washer is sterilized with swept magnetic field and fills
The magnetic field intensity put is 3.5T.
Further, the first metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2), the 3rd metal-oxide-semiconductor (S3) and the 4th metal-oxide-semiconductor (S4) are
N-channel enhancement mode metal-oxide-semiconductor.
Further, the accounting for of the first metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2), the 3rd metal-oxide-semiconductor (S3) and the 4th metal-oxide-semiconductor (S4)
Empty ratio is 0.5.
Based on above-mentioned any beet washer swept magnetic field sterilizing unit, further, the first protection electric capacity (Ct1) and second
The capacitance of protection electric capacity (Ct2) is 1uF/1500V.
Based on above-mentioned any beet washer swept magnetic field sterilizing unit, further, the side wall of service sink include by outward to
Shell, copper mesh, field coil, insulating barrier and the inwall being inside sequentially connected.
Second aspect, the present invention provides a kind of beet washer that make use of above-mentioned beet washer swept magnetic field sterilizing unit with sweeping
Frequency magnetic field method for disinfection, the method includes：
Step S1, controls the first metal-oxide-semiconductor (S1) and the conducting of the 3rd body diode (D3), and the first electric current (Id1) is less than second
Electric current (Ir1), the primary winding voltage value (Vr1) of isolation converter and first voltage value (V1) phase of the first afterflow electric capacity (C1)
With the secondary winding voltage value (Vr2) of isolation converter is identical with the third voltage value (V3) of the 3rd afterflow electric capacity (C3)；
Step S2, controls the first metal-oxide-semiconductor (S1) to turn off, and controls the second metal-oxide-semiconductor (S2) conducting, and the 3rd body diode (D3) is led
Logical, the first electric current (Id1) rises, and the second electric current (Ir1) drops to zero, the primary winding voltage value (Vr1) of isolation converter by
First voltage value (V1) declines, until identical with second voltage value (- V2) of the second afterflow electric capacity (C2), isolate the secondary of converter
Level winding voltage value (Vr2) is identical with the third voltage value (V3) of the 3rd afterflow electric capacity (C3)；
Step S3, controls the second metal-oxide-semiconductor (S2) and the conducting of the 3rd metal-oxide-semiconductor (S3), and the first electric current (Id1) continues to rise, the
The reversing of two electric currents (Ir1), inversely increases,
The primary winding voltage value (Vr1) of isolation converter and the second voltage value (- V2) phase of the second afterflow electric capacity (C2)
With the secondary winding voltage value (Vr2) of isolation converter is identical with the third voltage value (V3) of the 3rd afterflow electric capacity (C3)；
Step S4, controls the 3rd metal-oxide-semiconductor (S3) to turn off, and controls the 4th metal-oxide-semiconductor (S4) conducting, and the first electric current (Id1) continues
Rise, the second electric current (Ir1) continues to inversely increase, isolate primary winding voltage value (Vr1) and the second afterflow electric capacity of converter
(C2) second voltage value (- V2) is identical, and the secondary winding voltage value (Vr2) of isolation converter is declined by third voltage value (V3)
To the 4th magnitude of voltage (- V4)；
Step S5, controls the first metal-oxide-semiconductor (S1) and the conducting of the 4th metal-oxide-semiconductor (S4), and the first electric current (Id1) declines, the second electricity
Stream (Ir1) is positive after being reversely decreased to zero to be increased, the primary winding voltage value (Vr1) of isolation converter by second voltage value (-
V2) rise to first voltage value (V1), the of the secondary winding voltage value (Vr2) of isolation converter and the 4th afterflow electric capacity (C4)
Four magnitudes of voltage (- V4) are identical.
Beet washer of the present invention swept magnetic field sterilizing unit and method, replace break-make using four metal-oxide-semiconductors, make isolation frequency conversion
Device produces high frequency pulse AC voltage, and magnetic field pulse generator can provide strong pulsed magnetic field to field coil, acts on cleaning
Vegetable in pond, the effect that the bacterial micro-organism in vegetable is subject to strong pulsed magnetic field leads to death, can be applicable to various antibacterials
Kill, sterilizing rate is high, equipment volume is little, is easily installed, equipment cost is low, energy efficient, and be difficult to form incrustation scale, or produce micro-
Measure loose cotton-shaped incrustation scale, easily exclude from outlet pipe, and do not affect water inlet tube of intaking.
Therefore, beet washer of the present invention swept magnetic field sterilizing unit and method, it is possible to increase the germicidal efficiency of vegetable, reduces
Equipment loss and equipment cost, are user-friendly to.
Brief description
In order to be illustrated more clearly that the specific embodiment of the invention or technical scheme of the prior art, below will be to concrete
In embodiment or description of the prior art, the accompanying drawing of required use is briefly described.In all of the figs, similar element
Or partly typically identified by similar reference.In accompanying drawing, each element or part might not be drawn according to actual ratio.
Fig. 1 shows a kind of scheme of installation of beet washer swept magnetic field sterilizing unit provided by the present invention；
Fig. 2 shows the connection diagram of a kind of pulsed magnetic generator provided by the present invention and field coil；
Fig. 3 shows a kind of voltage of isolation converter provided by the present invention and the oscillogram of electric current.
Specific embodiment
Below in conjunction with accompanying drawing, the embodiment of technical solution of the present invention is described in detail.Following examples are only used for
Clearly technical scheme is described, is therefore intended only as example, and the protection of the present invention can not be limited with this
Scope.
It should be noted that unless otherwise stated, technical term used in this application or scientific terminology should be this
The ordinary meaning that bright one of ordinary skill in the art are understood.
In a first aspect, the embodiment of the present invention provides a kind of beet washer magnetic field sterilizing unit, this device includes：Water inlet pipe,
Service sink and outlet pipe, wherein, service sink is provided with sterilization magnetic field generator.
The embodiment of the present invention provides another kind of beet washer swept magnetic field sterilizing unit, and in conjunction with Fig. 1, this device is included successively
Water inlet pipe 1, service sink 2 and the outlet pipe 3 connecting.The side wall of service sink 2 is provided with field coil 23 and pulsed magnetic generator, magnetic
Field coil 23 is connected with magnetic field pulse generator.In conjunction with Fig. 2, field coil 23 includes the first field coil L1 and the second magnetic field line
Circle L2.Pulsed magnetic generator includes the first circuit, second circuit and isolation converter.First circuit includes input power
(Vin), filter inductance (Ldc), the first metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2), the first body diode (D1), the second body diode
(D2), the first resonant capacitance (Cr1), the second resonant capacitance (Cr2), the first afterflow electric capacity (C1), the second afterflow electric capacity (C2),
One protection electric capacity (Ct1) and leakage inductance (Ls), the positive pole of input power (Vin) is connected with the first end of filter inductance (Ldc),
The negative pole of input power (Vin) respectively with the drain electrode of the second metal-oxide-semiconductor (S2), the positive pole of the second body diode (D2), the second resonance
The first end of the first end of electric capacity (Cr2) and the second afterflow electric capacity (C2) connects, and the second end of filter inductance (Ldc) is respectively with the
The drain electrode of one metal-oxide-semiconductor (S1), the positive pole of the first body diode (D1), the first end of the first resonant capacitance (Cr1), the second metal-oxide-semiconductor
(S2) electric capacity is protected at source electrode, the negative pole of the second body diode (D2), the second end of the second resonant capacitance (Cr2) and first
(Ct1) first end connects, source electrode negative pole, the first resonance electricity with the first body diode (D1) respectively of the first metal-oxide-semiconductor (S1)
The first end at the second end and the first afterflow electric capacity (C1) that hold (Cr1) connects, second end and first of the first protection electric capacity (Ct1)
Field coil L1, leakage inductance (Ls) are sequentially connected.Second circuit include the second protection electric capacity (Ct2), the 3rd metal-oxide-semiconductor (S3),
4th metal-oxide-semiconductor (S4), the 3rd body diode (D3), the 4th body diode (D4), the 3rd resonant capacitance (Cr3), the 4th resonance electricity
Hold (Cr4), the 3rd afterflow electric capacity (C3) and the 4th afterflow electric capacity (C4) to connect, the second field coil L2 and second protection electric capacity
(Ct2) first end connects, the second end drain electrode, the 4th MOS with the 3rd metal-oxide-semiconductor (S3) respectively of the second protection electric capacity (Ct2)
The source electrode of pipe (S4), the positive pole of the 3rd body diode (D3), the negative pole of the 4th body diode (D4), the 3rd resonant capacitance (Cr3)
First end and the first end of the 4th resonant capacitance (Cr4) connect, the source electrode of the 3rd metal-oxide-semiconductor (S3) respectively with the 3rd body diode
(D3) first end of negative pole, the second end of the 3rd resonant capacitance (Cr3) and the 3rd afterflow electric capacity (C3) connects, the 4th metal-oxide-semiconductor
(S4) drain electrode respectively with the positive pole of the 4th body diode (D4), the second end of the 4th resonant capacitance (Cr4) and the 4th afterflow electricity
The first end holding (C4) connects.The first end of armature winding of isolation converter is connected with leakage inductance (Ls), isolates converter
The second end of armature winding be connected with the second end of the first afterflow electric capacity (C1) and the second afterflow electric capacity (C2) respectively, isolation becomes
The first end of the secondary windings of frequency device is connected with the second field coil L2, isolation converter secondary windings the second end respectively with
Second end of the 3rd afterflow electric capacity (C3) and the 4th afterflow electric capacity (C4) connects.Wherein, service sink 2 is open above, permissible
It is directly placed into vegetable；First afterflow electric capacity (C1), the second afterflow electric capacity (C2), the 3rd afterflow electric capacity (C3) and the 4th afterflow electric capacity
(C4) it is to isolate the electric capacity that the afterflow of converter acts on, realize the first metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2), the 3rd metal-oxide-semiconductor
And the 4th metal-oxide-semiconductor (S4) no-voltage on-off action (S3)；Leakage inductance (Ls) is the critical elements of isolation frequency converter energy transmission,
Also ensure that the Sofe Switch effect of isolation converter simultaneously；Electric capacity (Ct2) two ends are protected in first protection electric capacity (Ct1) and second
Four metal-oxide-semiconductors are played a protective role by voltage ripple very little.
The present embodiment beet washer swept magnetic field sterilizing unit, replaces break-make using four metal-oxide-semiconductors, so that isolation converter is produced
Raw high frequency pulse AC voltage, magnetic field pulse generator can provide strong pulsed magnetic field to field coil 23, acts on service sink 2
In vegetable, by the bacterial micro-organism in vegetable be subject to strong pulsed magnetic field effect lead to death, can be applicable to various antibacterials and go out
Kill, sterilizing rate is high, equipment volume is little, is easily installed, equipment cost is low, energy efficient, and be difficult to form incrustation scale, or produce micro
Loose cotton-shaped incrustation scale, easily excludes from outlet pipe 3, and does not affect water inlet pipe 1 and intake.
Therefore, the present embodiment beet washer swept magnetic field sterilizing unit, it is possible to increase the germicidal efficiency of vegetable, reduces equipment
Loss and equipment cost, are user-friendly to.
In order to improve the systematic function of the present embodiment beet washer swept magnetic field sterilizing unit further, set in device parameter
Determine aspect, input power (Vin) is preferably DC source, output voltage is 24V.First metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2),
The switching frequency of the 3rd metal-oxide-semiconductor (S3) and the 4th metal-oxide-semiconductor (S4) is preferably 50KHz.First metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor
(S2), the dutycycle of the 3rd metal-oxide-semiconductor (S3) and the 4th metal-oxide-semiconductor (S4) is preferably 0.5.Beet washer swept magnetic field sterilizing unit
Magnetic field intensity is 3.5T.This device can produce the magnetic field intensity of 3.5T, it is possible to increase germicidal efficiency, and can reduce device
Power consumption.
In terms of device selection, the first metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2), the 3rd metal-oxide-semiconductor (S3) and the 4th metal-oxide-semiconductor
(S4) it is N-channel enhancement mode metal-oxide-semiconductor.First protection electric capacity (Ct1) and second protects electric capacity (Ct2) all to select the capacitance to be
The electric capacity of 1uF/1500V.Using N-channel enhancement mode metal-oxide-semiconductor, conducting resistance is little, advantageously reduces conduction loss, and easy system
Make, growing amount is big.
In the installation of device, shell 21 that the side wall of service sink 2 includes being sequentially connected from outside to inside, copper mesh 22, magnetic
Field coil 23, insulating barrier 24 and inwall it is ensured that strong pulsed magnetic field environment no affects to external world, and ensure service sink 2 in liquid
Do not interfere with circuit devcie normal work.
Second aspect, the embodiment of the present invention provide a kind of make use of above-mentioned beet washer swept magnetic field sterilizing unit wash dish
Machine swept magnetic field method for disinfection, the method be mainly periodically control the first metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2), the 3rd
The conducting of metal-oxide-semiconductor (S3) and the 4th metal-oxide-semiconductor (S4) and closing, make isolation converter produce a high-frequency impulse as shown in Figure 3
Alternating voltage, comprises the following steps that：
Step S1, controls the first metal-oxide-semiconductor (S1) and the conducting of the 3rd body diode (D3), and the first electric current (Id1) is less than second
Electric current (Ir1),
The primary winding voltage value (Vr1) of isolation converter and first voltage value (V1) phase of the first afterflow electric capacity (C1)
With the secondary winding voltage value (Vr2) of isolation converter is identical with the third voltage value (V3) of the 3rd afterflow electric capacity (C3), such as schemes
Shown in 3 t1 period；
Step S2, controls the first metal-oxide-semiconductor (S1) to turn off, and controls the second metal-oxide-semiconductor (S2) conducting, and the 3rd body diode (D3) is led
Logical, the first electric current (Id1) rises, and the second electric current (Ir1) drops to zero, the primary winding voltage value (Vr1) of isolation converter by
First voltage value (V1) declines, until identical with second voltage value (- V2) of the second afterflow electric capacity (C2), isolate the secondary of converter
Level winding voltage value (Vr2) is identical with the third voltage value (V3) of the 3rd afterflow electric capacity (C3), concrete change such as the t2 period of Fig. 3
It is shown,
Wherein, the first metal-oxide-semiconductor (S1) turns off, the first resonant capacitance (Cr1), the second resonant capacitance (Cr2) and leakage inductance
(Ls) start resonance so that the voltage on the second resonant capacitance (Cr2) both sides is by V1+V2Begin to decline, the first protection electric capacity (Ct1)
It is electrically charged.The speed of discharge and recharge depends in t1Finish time period, the difference of the first electric current (Id1) and the second electric current (Ir1).
When the voltage on the second resonant capacitance (Cr2) both sides drops to zero, the second body diode (D2) conducting of the second metal-oxide-semiconductor (S2),
The voltage of the first resonant capacitance (Cr1) is charged to V1+V2.During this period, the second metal-oxide-semiconductor (S2) turns under the conditions of ZVS.With
When, the first electric current (Id1) is more than the second electric current (Ir1), is led for the second metal-oxide-semiconductor (S2) by the second body diode (D2) conducting transfer
Logical.
Step S3, controls the second metal-oxide-semiconductor (S2) and the conducting of the 3rd metal-oxide-semiconductor (S3), and the first electric current (Id1) continues to rise, the
The reversing of two electric currents (Ir1), inversely increases, and is the 3rd metal-oxide-semiconductor (S3) conducting by the 3rd body diode (D3) conducting transfer,
The primary winding voltage value (Vr1) of isolation converter is identical with second voltage value (- V2) of the second afterflow electric capacity (C2), and isolation becomes
The secondary winding voltage value (Vr2) of frequency device is identical with the third voltage value (V3) of the 3rd afterflow electric capacity (C3), such as the t3 period of Fig. 3
Shown；
Step S4, controls the 3rd metal-oxide-semiconductor (S3) to turn off, and controls the 4th metal-oxide-semiconductor (S4) conducting, and the first electric current (Id1) continues
Rise, the second electric current (Ir1) continues to inversely increase, isolate primary winding voltage value (Vr1) and the second afterflow electric capacity of converter
(C2) second voltage value (- V2) is identical, and the secondary winding voltage value (Vr2) of isolation converter is declined by third voltage value (V3)
To the 4th magnitude of voltage (- V4), specifically change as shown in the t4 period of Fig. 3,
Wherein, the 3rd metal-oxide-semiconductor (S3) turns off, and the 3rd resonant capacitance (Cr3) and the 4th resonant capacitance (Cr4) carry out charge and discharge
Electricity, the speed of discharge and recharge depends in t4The size of period second electric current (Ir1).When under the voltage of the 4th resonant capacitance (Cr4)
When dropping to zero, the 4th body diode (D4) begins to turn on.During this period, the 4th metal-oxide-semiconductor (S4) turns under the conditions of ZVS；
Step S5, controls the first metal-oxide-semiconductor (S1) and the conducting of the 4th metal-oxide-semiconductor (S4), and the first electric current (Id1) declines, the second electricity
Stream (Ir1) is positive after being reversely decreased to zero to be increased, the primary winding voltage value (Vr1) of isolation converter by second voltage value (-
V2 first voltage value (V1), the secondary winding voltage value (Vr2) of isolation converter and described 4th afterflow electric capacity (C4)) are risen to
The 4th magnitude of voltage (- V4) identical, as shown in the t5 period of Fig. 3,
Wherein, the second metal-oxide-semiconductor (S2) turns off, the first resonant capacitance (Cr1), the second resonant capacitance (Cr2) and leakage inductance
(Ls) start resonance so that the voltage on the first resonant capacitance (Cr1) both sides is by V1+V2Begin to decline, the speed of discharge and recharge depends on
When the first electric current (Id1) and the second electric current (Ir1) summation.As the first resonant capacitance Cr1The voltage V on both sides1+V2Open
When beginning to drop to zero, the first body diode (D1) begins to turn on.Second electric current (Ir1) also begins to direction and reduces, until for zero.?
During this, the first metal-oxide-semiconductor (S1) turns under the conditions of ZVS.
The present embodiment beet washer swept magnetic field method for disinfection, replaces break-make using four metal-oxide-semiconductors, so that isolation converter is produced
Raw high frequency pulse AC voltage, magnetic field pulse generator can provide strong pulsed magnetic field to field coil, acts in service sink
Vegetable, by the bacterial micro-organism in vegetable be subject to strong pulsed magnetic field effect lead to death, can be applicable to various antibacterials and kill,
Sterilizing rate is high, and equipment volume is little, is easily installed, equipment cost is low, energy efficient, and is difficult to form incrustation scale, or produces micro dredging
The cotton-shaped incrustation scale of pine, easily excludes from outlet pipe, and does not affect water inlet tube of intaking.
Therefore, the present embodiment beet washer swept magnetic field method for disinfection, it is possible to increase the germicidal efficiency of vegetable, reduces equipment
Loss and equipment cost, are user-friendly to.
Finally it should be noted that：Various embodiments above only in order to technical scheme to be described, is not intended to limit；To the greatest extent
Pipe has been described in detail to the present invention with reference to foregoing embodiments, it will be understood by those within the art that：Its according to
So the technical scheme described in foregoing embodiments can be modified, or wherein some or all of technical characteristic is entered
Row equivalent；And these modifications or replacement, do not make the essence of appropriate technical solution depart from various embodiments of the present invention technology
The scope of scheme, it all should be covered in the middle of the claim of the present invention and the scope of description.
Claims (10)
1. a kind of beet washer with magnetic field sterilizing unit it is characterised in that include：Water inlet pipe, service sink and outlet pipe, wherein, clearly
Wash pool is provided with sterilization magnetic field generator.
2. a kind of beet washer with swept magnetic field sterilizing unit it is characterised in that include：
Water inlet pipe, service sink and the outlet pipe being sequentially connected,
The side wall of described service sink is provided with field coil and pulsed magnetic generator, and described field coil is sent out with described magnetic field pulse
Raw device connects,
Described field coil includes the first field coil L1 and the second field coil L2,
Described pulsed magnetic generator includes the first circuit, second circuit and isolation converter,
Described first circuit include input power (Vin), filter inductance (Ldc), the first metal-oxide-semiconductor (S1), the second metal-oxide-semiconductor (S2),
First body diode (D1), the second body diode (D2), the first resonant capacitance (Cr1), the second resonant capacitance (Cr2), first continue
Stream electric capacity (C1), the second afterflow electric capacity (C2), the first protection electric capacity (Ct1) and leakage inductance (Ls),
The positive pole of described input power (Vin) is connected with the first end of described filter inductance (Ldc), described input power (Vin)
Negative pole respectively with the drain electrode of described second metal-oxide-semiconductor (S2), the positive pole of described second body diode (D2), the second resonant capacitance
(Cr2) first end and the first end of described second afterflow electric capacity (C2) connect,
Second end of described filter inductance (Ldc) drain electrode, described first body diode with described first metal-oxide-semiconductor (S1) respectively
(D1) positive pole, the first end of described first resonant capacitance (Cr1), the source electrode of described second metal-oxide-semiconductor (S2), described second body two
The first end of the negative pole of pole pipe (D2), the second end of described second resonant capacitance (Cr2) and described first protection electric capacity (Ct1) is even
Connect,
The source electrode of described first metal-oxide-semiconductor (S1) negative pole, described first resonant capacitance with described first body diode (D1) respectively
(Cr1) the second end and the first end of the first afterflow electric capacity (C1) connect,
Second end of described first protection electric capacity (Ct1) is connected successively with described first field coil L1, described leakage inductance (Ls)
Connect,
Described second circuit includes the second protection electric capacity (Ct2), the 3rd metal-oxide-semiconductor (S3), the 4th metal-oxide-semiconductor (S4), the 3rd body two pole
Pipe (D3), the 4th body diode (D4), the 3rd resonant capacitance (Cr3), the 4th resonant capacitance (Cr4), the 3rd afterflow electric capacity (C3)
Connect with the 4th afterflow electric capacity (C4),
The first end of described second field coil L2 and described second protection electric capacity (Ct2) connects,
Second end drain electrode, described 4th metal-oxide-semiconductor with described 3rd metal-oxide-semiconductor (S3) respectively of described second protection electric capacity (Ct2)
(S4) source electrode, the positive pole of described 3rd body diode (D3), the negative pole of described 4th body diode (D4), described 3rd resonance
The first end of the first end of electric capacity (Cr3) and described 4th resonant capacitance (Cr4) connects,
The source electrode of described 3rd metal-oxide-semiconductor (S3) negative pole, described 3rd resonant capacitance with described 3rd body diode (D3) respectively
(Cr3) the second end and the first end of described 3rd afterflow electric capacity (C3) connect,
The drain electrode of described 4th metal-oxide-semiconductor (S4) positive pole, described 4th resonant capacitance with described 4th body diode (D4) respectively
(Cr4) the second end and the first end of described 4th afterflow electric capacity (C4) connect,
The first end of armature winding of described isolation converter is connected with described leakage inductance (Ls), at the beginning of described isolation converter
Second end of level winding is connected with the second end of described first afterflow electric capacity (C1) and described second afterflow electric capacity (C2) respectively,
The first end of secondary windings of described isolation converter is connected with described second field coil L2, described isolation converter
Second end of secondary windings is connected with the second end of described 3rd afterflow electric capacity (C3) and described 4th afterflow electric capacity (C4) respectively.
3. according to claim 2 beet washer with swept magnetic field sterilizing unit it is characterised in that
Described input power (Vin) is DC source.
4. according to Claims 2 or 3 beet washer with swept magnetic field sterilizing unit it is characterised in that
Described first metal-oxide-semiconductor (S1), described second metal-oxide-semiconductor (S2), described 3rd metal-oxide-semiconductor (S3) and described 4th metal-oxide-semiconductor (S4)
Switching frequency be 50KHz.
5. according to claim 2～4 any one beet washer swept magnetic field sterilizing unit it is characterised in that described wash
The magnetic field intensity of dish machine swept magnetic field sterilizing unit is 3.5T.
6. according to claim 4 beet washer with swept magnetic field sterilizing unit it is characterised in that
Described first metal-oxide-semiconductor (S1), described second metal-oxide-semiconductor (S2), described 3rd metal-oxide-semiconductor (S3) and described 4th metal-oxide-semiconductor (S4)
It is N-channel enhancement mode metal-oxide-semiconductor.
7. according to claim 4 beet washer with swept magnetic field sterilizing unit it is characterised in that
Described first metal-oxide-semiconductor (S1), described second metal-oxide-semiconductor (S2), described 3rd metal-oxide-semiconductor (S3) and described 4th metal-oxide-semiconductor (S4)
Dutycycle be 0.5.
8. according to claim 2 beet washer with swept magnetic field sterilizing unit it is characterised in that
The capacitance of described first protection electric capacity (Ct1) and described second protection electric capacity (Ct2) is 1uF/1500V.
9. according to claim 2 beet washer with swept magnetic field sterilizing unit it is characterised in that
Shell that the side wall of described service sink includes being sequentially connected from outside to inside, copper mesh, described field coil, insulating barrier and interior
Wall.
10. a kind of beet washer that make use of beet washer swept magnetic field sterilizing unit described in claim 2～9 any one is with sweeping
Frequency magnetic field method for disinfection is it is characterised in that include：
Step S1, controls the first metal-oxide-semiconductor (S1) and the conducting of the 3rd body diode (D3),
First electric current (Id1) is less than the second electric current (Ir1),
The primary winding voltage value (Vr1) of described isolation converter and first voltage value (V1) phase of the first afterflow electric capacity (C1)
With the secondary winding voltage value (Vr2) of described isolation converter is identical with the third voltage value (V3) of the 3rd afterflow electric capacity (C3)；
Step S2, controls described first metal-oxide-semiconductor (S1) to turn off, and controls the second metal-oxide-semiconductor (S2) conducting, described 3rd body diode
(D3) turn on, described first electric current (Id1) rises, described second electric current (Ir1) drops to zero,
The primary winding voltage value (Vr1) of described isolation converter is declined by described first voltage value (V1), until continuous with second
Second voltage value (- V2) of stream electric capacity (C2) is identical, secondary winding voltage value (Vr2) and the 3rd afterflow of described isolation converter
The third voltage value (V3) of electric capacity (C3) is identical；
Step S3, controls described second metal-oxide-semiconductor (S2) and the conducting of the 3rd metal-oxide-semiconductor (S3), in the continuation of described first electric current (Id1)
Rise, the reversing of described second electric current (Ir1), inversely increase,
Primary winding voltage value (Vr1) and the described second afterflow electric capacity (C2) of described isolation converter second voltage value (-
V2) identical, the third voltage value (V3) of the described secondary winding voltage value (Vr2) isolating converter and the 3rd afterflow electric capacity (C3)
Identical；
Step S4, controls described 3rd metal-oxide-semiconductor (S3) to turn off, and controls described 4th metal-oxide-semiconductor (S4) conducting, described first electric current
(Id1) continue to rise, described second electric current (Ir1) continues to inversely increase, the primary winding voltage value of described isolation converter
(Vr1) identical with second voltage value (- V2) of described second afterflow electric capacity (C2), the secondary winding voltage of described isolation converter
Value (Vr2) drops to the 4th magnitude of voltage (- V4) by described third voltage value (V3)；
Step S5, controls described first metal-oxide-semiconductor (S1) and described 4th metal-oxide-semiconductor (S4) conducting, under described first electric current (Id1)
Fall, described second electric current (Ir1) is positive after being reversely decreased to zero to increase, the primary winding voltage value of described isolation converter
(Vr1) described first voltage value (V1), the secondary windings electricity of described isolation converter are risen to by described second voltage value (- V2)
Pressure value (Vr2) is identical with the 4th magnitude of voltage (- V4) of described 4th afterflow electric capacity (C4).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112826105A (en) * | 2021-01-20 | 2021-05-25 | 合肥美菱物联科技有限公司 | Fruit and vegetable cleaning machine and control method thereof |
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