CN103943528A - Off-line monitoring method for NDC thin films - Google Patents
Off-line monitoring method for NDC thin films Download PDFInfo
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- CN103943528A CN103943528A CN201410111309.8A CN201410111309A CN103943528A CN 103943528 A CN103943528 A CN 103943528A CN 201410111309 A CN201410111309 A CN 201410111309A CN 103943528 A CN103943528 A CN 103943528A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Automation & Control Theory (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The invention provides an off-line monitoring method for NDC thin films. The off-line monitoring method comprises the steps that firstly, a protection layer and a bonding layer are developed on a monitoring wafer in sequence; secondly, after a copper layer is developed on the bonding layer, one NDC thin film is developed on the copper layer, an optical measuring machine is used for testing the NDC thin film to monitor the parameters of the NDC thin film; thirdly, a copper layer is developed on the NDC thin film formed in the second step, one NDC thin film is developed on the newly formed copper layer, and the optical measuring machine is used for testing the new NDC thin film to monitor the parameters of the new NDC thin film; fourthly, the third step is repeatedly executed. The number of use times of the monitoring wafer is limited not to be more than five. By means of the off-line monitoring method, the monitoring wafer of the NDC thin films can be used many times continuously in a factory, the number of recycling times of the monitoring wafer of the NDC thin films is reduced, and the usage amount of the monitoring wafer of the NDC thin films is reduced.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing technology field, relate in particular to a kind of monitored off-line method for NDC film.
Background technology
In recent years, the conventional dielectric barrier that does integrated circuit back-end of nitrogen doped silicon carbide film (nitride doped silicon carbide, NDC), its object is to stop Cu to spread in medium with dielectric barrier.As depicted in figs. 1 and 2, first direct growth NDC film 20 on nude film wafer 10, then tests NDC film 20 with corresponding optical measurement board the method for monitoring NDC film, in order to monitor the parameter such as thickness, refractive index of NDC film 20 at present.
But, because the chemical property of NDC film 20 is highly stable, be insoluble to strong acid, although NDC film 20 dissolves in highly basic, but highly basic can pollute again silicon chip, so cannot use conventional cleaning to have the wafer of NDC film 20 10 to clean to growing in factory, thereby also cause reclaiming the wafer 10 for monitoring.In order to have the wafer of NDC film 20 10 to reclaim to growing, usual way is directly to take out factory, entrusts special wafer recovery company to process.First the staff that wafer reclaims company can remove the NDC film 20 on wafer 10 surfaces by the way of cmp, then the wafer 10 that removes NDC film 20 is cleaned and is detected.
Recycled owing to using wafer once to see off, and not only meaned on the one hand the higher recovery cost of needs cost, also requirement has a large amount of wafers for subsequent use in factory on the other hand.Therefore how to realize monitoring wafer for the NDC film continuous several times in factory and use, to reduce recovered frequency and the consumption of this monitoring wafer, the formal problem that will solve required for the present invention.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, and a kind of monitored off-line method for NDC film is provided.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of monitored off-line method for NDC film, it comprises:
First step, on monitoring wafer, grow successively a protective layer and an adhesive layer;
Second step is grown after a bronze medal layer on described adhesive layer, and the NDC film of growing on described copper layer is tested described NDC film with optics measurement platform, to monitor each parameter of described NDC film;
Third step, regrowth one bronze medal layer on the NDC film forming in front step, also regrowth one NDC film on the copper layer forming in this step, tests the NDC film of formation in this step with optics measurement platform, to monitor each parameter of the NDC film forming in this step;
The 4th step, repeats third step, and wherein, described monitoring wafer limited using frequency is not more than 5 times.
Preferably, the material that described protective layer forms is silicon oxide film or silicon nitride film, and its thickness is
Preferably, the material that described adhesive layer uses is tantalum nitride/tantalum, its thickness
Preferably, the material that described adhesive layer uses is tantalum nitride/tantalum, its thickness
Preferably, the thickness of described copper layer is
Preferably, the thickness of described copper layer is
Preferably, the method that described copper layer forms is for first depositing an inculating crystal layer on described adhesive layer, then the electro-coppering of growing on described inculating crystal layer.
Preferably, described each parameter at least comprises thickness and the refractive index of NDC film.
Preferably, described limited using frequency depends on the cumulative maximum stress of copper layer in not bending the born each step of described monitoring wafer.
Compared with prior art, before the present invention deposits NDC film on monitoring wafer, the first bronze medal layer of having grown on monitoring wafer, therefore do not need to deliver to factory for used monitoring wafer and do recycling, but on the NDC film of having grown another copper layer of regrowth, just can directly continue to use as the monitored off-line wafer of NDC film next time, thereby the continuous several times of the monitoring wafer of having realized NDC film in factory used, not only can reduce the recovered frequency of the monitoring wafer of NDC film, also can reduce the consumption of the monitoring wafer of NDC film.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of monitoring the method for NDC film in prior art;
Fig. 2 is the structural representation of the monitoring wafer with NDC film shown in Fig. 1;
Fig. 3 is the schematic flow sheet of the monitored off-line method for NDC film in the embodiment of the present invention one;
Fig. 4 is the schematic flow sheet of the monitored off-line method for NDC film in the embodiment of the present invention two;
Fig. 5 is the structural representation between NDC film and monitoring wafer with copper layer shown in Fig. 3 and Fig. 4.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details are set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public concrete enforcement.
Embodiment mono-
Specifically, Fig. 3 schematically shows according to the flow chart of the monitored off-line method for NDC film of the embodiment of the present invention one.
As shown in Figure 3, in conjunction with Fig. 5, comprise according to the monitored off-line method for NDC film of the embodiment of the present invention one:
First step S1, on monitoring wafer 100, grow successively from the bottom to top a protective layer 200 and an adhesive layer 300.
Wherein, described protective layer 200 adopts PECVD method to be formed by silicon oxide film material, and the thickness of formation is
if described protective layer is excessively thin, cannot provide protection to silicon chip, if described protective layer is blocked up, easily cause the waste of material, expenditure raises the cost.Silicon chip described here is described monitoring wafer 100.And the material that described adhesive layer 300 uses is tantalum nitride/tantalum (TaN/Ta), the thickness that described adhesive layer 300 forms is
and in most preferred embodiment one of the present invention, the thickness that described adhesive layer forms is
If described monitoring wafer directly contacts with adhesive layer or copper layer, can, in recycling flow process, while causing removing adhesive layer or copper layer, can be damaged to monitoring wafer.So, on the surface of described monitoring wafer, deposit layer protecting film, when making to remove described adhesive layer or copper layer, damage is not to monitor wafer but protective layer, and in removing described protective layer, monitoring wafer itself can not be damaged.
Second step S2 grows after a bronze medal layer Cu1 on described adhesive layer 300, and the NDC film M1 that grows on described copper layer Cu1 tests described NDC film M1 with optics measurement platform, to monitor each parameter of described NDC film M1.
Wherein, the thickness of described copper layer is
the reason that described copper layer Cu1 selects be because: in the time of following adopted optical measurement NDC film M1, need to apply to principle of reflection, therefore can not printing opacity as the substrate that supports NDC film M1.Because metallic copper can not produce light leakage phenomenon, the NDC film M1 so can grow on copper layer Cu1, then copper layer Cu1 together with described monitoring wafer 100 as optical measurement substrate, thereby can obtain the parameters such as the needed thickness of NDC film M1, refractive index.Therefore, described copper layer Cu1 can not be excessively thin, and if described copper layer Cu1 is blocked up, can cause equally the waste of material, in most preferred embodiment one of the present invention, the thickness of described copper layer Cu1 is
Third step S3, for these used monitoring wafers 100, do not need to send factory and do recycling, but regrowth one bronze medal layer Cu2 on the described NDC film M1 forming in front step just can directly continue to use as the monitored off-line wafer of new NDC film.For example, also regrowth one NDC film M2 on the described copper layer Cu2 forming in this step, then tests the described NDC film M2 of formation in this step with optics measurement platform, can monitor equally each parameter of the NDC film M2 forming in this step.
The 4th step S4, repeats third step, can realize being repeatedly used of monitored off-line wafer of NDC film by the present invention.But the cumulative stress of the copper layer that each step forms can cause described monitoring wafer 100 to produce bending to a certain degree, so the reusable number of times of described monitoring wafer 100 neither be unlimited.In the time that described monitoring wafer 100 has exceeded the cumulative maximum stress of copper layer in not bending born each step, just can determine and need the number of times of reusing that limits.After the reusable number of times of described monitoring wafer arrives limited number of times, described monitoring wafer 100 is sent to factory and reclaim.In most preferred embodiment one of the present invention, described monitoring wafer 100 restrictions are reused number of times and are not more than 5 times, and all the other copper layers (Cu3-Cu5) and corresponding NDC film (M3-M5) form according to third step, and Fig. 5 schematically shows.
Embodiment bis-
Specifically, Fig. 4 is on the basis of the embodiment of the present invention one, further schematically shows according to the flow chart of the monitored off-line method for NDC film of the embodiment of the present invention two.
As shown in Figure 4, in conjunction with Fig. 5, comprise according to the monitored off-line method for NDC film of the embodiment of the present invention two:
First step S1, on monitoring wafer 100, grow successively from the bottom to top a protective layer 200 and an adhesive layer 300.
Wherein, described protective layer 200 adopts PECVD method to be formed by silicon nitride film material, and the thickness of formation is
if described protective layer is excessively thin, cannot provide protection to silicon chip, if described protective layer is blocked up, easily cause the waste of material, expenditure raises the cost.Silicon chip described here is described monitoring wafer 100.And the material that described adhesive layer 300 uses is tantalum nitride/tantalum (TaN/Ta), the thickness that described adhesive layer 300 forms is
and in most preferred embodiment of the present invention, the thickness that described adhesive layer forms is
If described monitoring wafer directly contacts with adhesive layer or copper layer, can, in recycling flow process, while causing removing adhesive layer or copper layer, can be damaged to monitoring wafer.So, on the surface of described monitoring wafer, deposit layer protecting film, when making to remove described adhesive layer or copper layer, damage is not to monitor wafer but protective layer, and in removing described protective layer, monitoring wafer itself can not be damaged.
Second step S2 first, adopts physical vaporous deposition (preferred, to adopt sputtering method) deposit thickness to be on described adhesive layer 300
layer of copper, as the inculating crystal layer 401 in follow-up electro-coppering processing procedure, then adopt galvanoplastic copper facing on described inculating crystal layer 401, form thickness be
an electro-coppering 402, formed thickness by described inculating crystal layer 401 and electro-coppering 402 and be
a bronze medal layer Cu1.Then, the NDC film M1 that grows on described copper layer Cu1, tests described NDC film M1 with optics measurement platform, to monitor each parameter of described NDC film M1.
The reason that described copper layer Cu1 selects be because: in the time of following adopted optical measurement NDC film M1, need to apply to principle of reflection, therefore can not printing opacity as the substrate that supports NDC film M1.Because metallic copper can not produce light leakage phenomenon, the NDC film M1 so can grow on copper layer Cu1, then copper layer Cu1 together with described monitoring wafer 100 as optical measurement substrate, thereby can obtain the parameters such as the needed thickness of NDC film M1, refractive index.Therefore, described copper layer Cu1 can not be excessively thin, and if described copper layer Cu1 is blocked up, can cause equally the waste of material, in most preferred embodiment of the present invention, the thickness of described copper layer Cu1 is
Third step S3, for these used monitoring wafers 100, do not need to send factory and do recycling, but deposit again an inculating crystal layer 403 on the described NDC film M1 forming in front step, on described inculating crystal layer 403, adopt galvanoplastic copper facing again, formation thickness is
an electro-coppering 404, formed thickness by described inculating crystal layer 403 and electro-coppering 404 and be
a bronze medal layer Cu2, described like this copper layer Cu2 just can be directly continues to use as the monitored off-line wafer of new NDC film.For example, also regrowth one NDC film M2 on the described copper layer Cu2 forming in this step, then tests the described NDC film M2 of formation in this step with optics measurement platform, can monitor equally each parameter of the NDC film M2 forming in this step.
The 4th step S4, repeats third step, can realize being repeatedly used of monitored off-line wafer of NDC film by the present invention.But the cumulative stress of the copper layer that each step forms can cause described monitoring wafer 100 to produce bending to a certain degree, so the reusable number of times of described monitoring wafer 100 neither be unlimited.In the time that described monitoring wafer 100 has exceeded the cumulative maximum stress of copper layer in not bending born each step, just can determine and need the number of times of reusing that limits.After the reusable number of times of described monitoring wafer arrives limited number of times, described monitoring wafer 100 is sent to factory and reclaim.In most preferred embodiment of the present invention, described monitoring wafer 100 limits number of repetition and is not more than 5 times, and all the other copper layers (Cu3-Cu5) and corresponding NDC film (M3-M5) form according to third step, and Fig. 5 schematically shows.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any those skilled in the art all can, under spirit of the present invention and category, modify and change above-described embodiment.Therefore, the scope of the present invention, should be as listed in claims.
Claims (9)
1. for a monitored off-line method for NDC film, it is characterized in that comprising:
First step, on monitoring wafer, grow successively a protective layer and an adhesive layer;
Second step is grown after a bronze medal layer on described adhesive layer, and the NDC film of growing on described copper layer is tested described NDC film with optics measurement platform, to monitor each parameter of described NDC film;
Third step, regrowth one bronze medal layer on the NDC film forming in front step, also regrowth one NDC film on the copper layer forming in this step, tests the NDC film of formation in this step with optics measurement platform, to monitor each parameter of the NDC film forming in this step;
The 4th step, repeats third step, and wherein, described monitoring wafer limited using frequency is not more than 5 times.
2. monitored off-line method as claimed in claim 1, is characterized in that, the material that described protective layer uses is silicon oxide film or silicon nitride film, and its thickness is
3. monitored off-line method as claimed in claim 1, is characterized in that, the material that described adhesive layer uses is tantalum nitride/tantalum, its thickness
4. monitored off-line method as claimed in claim 3, is characterized in that, the material that described adhesive layer uses is tantalum nitride/tantalum, its thickness
5. monitored off-line method as claimed in claim 1, is characterized in that, the thickness of described copper layer is
6. monitored off-line method as claimed in claim 1, is characterized in that, the thickness of described copper layer is
7. the monitored off-line method as described in claim 5 or 6, is characterized in that, the method that described copper layer forms is for first depositing an inculating crystal layer on described adhesive layer, then the electro-coppering of growing on described inculating crystal layer.
8. monitored off-line method as claimed in claim 1, is characterized in that, described each parameter at least comprises thickness and the refractive index of NDC film.
9. monitored off-line method as claimed in claim 1, is characterized in that, described limited using frequency depends on the cumulative maximum stress of copper layer in not bending the born each step of described monitoring wafer.
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| CN201410111309.8A CN103943528B (en) | 2014-03-24 | 2014-03-24 | Monitored off-line method for NDC thin film |
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| CN201410111309.8A CN103943528B (en) | 2014-03-24 | 2014-03-24 | Monitored off-line method for NDC thin film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465443A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Sensitivity analyzing method for NDC growth thickness |
| CN104465366A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | NDC growth control method |
| CN112038250A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for off-line monitoring influence of dielectric layer deposition process on copper resistance |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104465443A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Sensitivity analyzing method for NDC growth thickness |
| CN104465366A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | NDC growth control method |
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| CN112038250A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for off-line monitoring influence of dielectric layer deposition process on copper resistance |
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| CN103943528B (en) | 2016-09-28 |
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