CN103035565A - Method for producing semiconductor device - Google Patents
Method for producing semiconductor device Download PDFInfo
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- CN103035565A CN103035565A CN2011102947568A CN201110294756A CN103035565A CN 103035565 A CN103035565 A CN 103035565A CN 2011102947568 A CN2011102947568 A CN 2011102947568A CN 201110294756 A CN201110294756 A CN 201110294756A CN 103035565 A CN103035565 A CN 103035565A
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Abstract
A method for producing a semiconductor device comprising steps of providing a substrate, forming a film on the substrate, removing unnecessary film materials through a chemical mechanical grinding process, and conducting the heat processing for the surface of the film through a thermal radiation source. The thermal radiation source is used for conducting heat processing for the surface of the film which is subjected to Chemical Mechanical Polishing (CMP), the contamination on the surface of the film is reduced, the probability that small projections are formed when other materials are deposited on the film is reduced and the yield is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of manufacture method of semiconductor device.
Background technology
Along with the development of semiconductor technology, integrated circuit is towards the future development of high integration.The requirement of high integration makes the live width of semiconductor device more and more less, and the reducing of live width had higher requirement to the formation technique of integrated circuit.
Semiconductor device generally includes multiple layer metal layer and multilayer dielectricity layer, is formed with the interconnection line that is communicated with described metal level in the described dielectric layer.
For the interconnection line demand after satisfying element and dwindling, the usually a kind of method of employing of very large scale integration technology institute that is designed to of two-layer and two-layer above multiple layer metal interconnection line.The process that semiconductor is made is normally at processing line leading portion (front end of line, FEOL) form MOS transistor, and the dielectric layer between the orlop in MOS transistor and the interconnection layer, form the design of described multiple layer metal interconnection line more than two-layer and two-layer at processing line back segment (back end of line, BEOL).
For example, a kind of method that forms metal interconnecting layer in semiconductor device in being the Chinese patent of CN1270371C, notification number is disclosed.
In the manufacture process of prior art BEOL, first by cmp (Chemical Mechanical Polishing, CMP) remove unnecessary metal layer material, afterwards, on metal level, form successively barrier layer, low K dielectric layer, wherein the barrier layer is used for preventing the diffusion of metal material, then can form the interconnection line between the metal level in the low K dielectric layer, and described low K dielectric layer also is used for making mutually insulated between the metal level.
Yet, because can use polishing fluid (slurry) in CMP technique processes metal level, after CMP technique, chemical solution among the slurry, organic substance are adsorbed on the surface of metal level easily, chemical solution, organic layer on surface of metal are arranged again during deposited barrier layer in absorption, surface on the barrier layer of the position of chemical solution, organic substance residues can form small embossment (hillock), thereby the yield of BEOL segment process is reduced.
Summary of the invention
The technical problem that the present invention solves provides a kind of manufacture method that improves the semiconductor device of yield.
In order to address the above problem, the invention provides a kind of manufacture method of semiconductor device, described manufacture method comprises:
Substrate is provided, forms film at substrate;
Remove unnecessary thin-film material by chemical mechanical milling tech;
Adopt infrared source that film surface is heat-treated.
Alternatively, described employing infrared source step that film surface is heat-treated comprises: make the temperature of described film surface in 350～400 ℃ scope by thermal radiation.
Alternatively, described infrared source is ultraviolet source, and the step that described employing infrared source is heat-treated film surface comprises: adopt described ultraviolet source that film surface is shone to heat-treat.
Alternatively, the wavelength of described ultraviolet source is in the scope of 400nm～200nm.
Alternatively, the wavelength of described ultraviolet source is 365nm.
Alternatively, the power of described ultraviolet source is in the scope of 100～500w, and the time that film surface is shone is in 1～5 minute scope.
Alternatively, described employing infrared source step that film surface is heat-treated comprises: under the vacuum environment of 0.1～0.5torr film surface is heat-treated.
Alternatively, described infrared source is visible light source, and the step that described employing infrared source is heat-treated film surface comprises: adopt described visible light source that film surface is shone to heat-treat.
Alternatively, described infrared source is the infrared light light source, and the step that described employing infrared source is heat-treated film surface comprises: adopt described infrared light light source that film surface is shone to heat-treat.
Alternatively, described film is metal level.
Alternatively, also be included in layer on surface of metal heat-treated after, on metal level, form successively barrier layer, dielectric layer.
Alternatively, the material of described metal level is copper.
Alternatively, the material on described barrier layer be the carborundum of nitrating, in the silicon nitride one or more.
Alternatively, the material of described dielectric layer is one or more among SiO2, SiOF, SiCOH, SiO, SiCO, the SiCON.
Compared with prior art, the present invention has the following advantages:
1. the film surface of infrared source after to CMP heat-treated, can make the residual chemical solution evaporation of slurry, make residual organic substance decomposing, thereby reduce the pollutant of film surface, reduce the probability of formed small embossment when described film deposition other materials, and then improved yield.
2. infrared source need not to contact with film surface, thereby prevents from polluting or damaging described film surface, has further improved yield.
3. alternatively, the temperature of film surface is when 350～400 ℃ scope, and the chemical solution of film surface, organic substance etc. can be removed effectively.
4. alternatively, adopt ultraviolet source to heat-treat, because the ultraviolet light wavelength is short, energy is stronger, can improve the efficient that film surface temperature raises.
5. alternatively, adopt ultraviolet source under the vacuum environment of 0.1～0.5torr, film surface to be heat-treated, can improve the evaporation efficiency of chemical solution.
Description of drawings
Fig. 1 is the schematic flow sheet of manufacture method one execution mode of semiconductor device of the present invention;
Fig. 2 to Fig. 5 is the side schematic view of semiconductor device one embodiment that forms of the manufacture method of semiconductor device of the present invention.
Embodiment
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization in the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public implementation.
Secondly, the present invention utilizes schematic diagram to be described in detail, and when the embodiment of the invention was described in detail in detail, for ease of explanation, described schematic diagram was example, and it should not limit the scope of protection of the invention at this.
In order to solve the problem of prior art, the invention provides a kind of manufacture method of semiconductor device, comprising: substrate is provided, forms film at substrate; Remove unnecessary thin-film material by chemical mechanical milling tech; Adopt infrared source that film surface is heat-treated.
The present invention heat-treats film surface by infrared source, film surface temperature is raise, the residual chemical solution of chemical mechanical milling tech is subjected to thermal evaporation, and residual organic substance decomposes, thereby reached removal film surface residue ground purpose, again when film surface deposition other materials, reduce to form the probability of small embossment, thereby improved yield afterwards.
With reference to figure 1, show the schematic flow sheet of manufacture method one execution mode of semiconductor device of the present invention.Particularly, described manufacture method roughly may further comprise the steps:
Step S1 provides substrate, forms metal material at substrate;
Step S2 removes unnecessary metal material by CMP, forms metal level;
Step S3 adopts ultraviolet source that layer on surface of metal is shone, to heat-treat;
Step S4 forms barrier layer, low K dielectric layer successively on the metal level after heat treatment.
Below in conjunction with the drawings and specific embodiments technical scheme of the present invention is elaborated.
Referring to figs. 2 to Fig. 5, show the side schematic view of semiconductor device one embodiment that the manufacture method of semiconductor device of the present invention forms.Present embodiment is take BEOL as example, but the present invention is not restricted to this, if exist the residue of CMP technique to affect the Similar Problems of yield at other operation stages, also can adopt technical solution of the present invention to solve.
As shown in Figure 2, provide substrate 100, the material of described substrate 100 can be monocrystalline silicon or single-crystal silicon Germanium, perhaps monocrystalline carbon doped silicon; The material that can also comprise other is such as III-V compounds of group such as GaAs.
In addition, be formed with the device architecture (not shown) in the described substrate 100, this device architecture can be the device architecture that forms in the semiconductor FEOL, such as MOS transistor etc.
As shown in Figure 3, remove unnecessary metal material by CMP technique, obtain smooth metal surface, form metal level 102.
Can use polishing fluid (slurry) in CMP technique, after CMP technique, the chemical solution among the slurry, organic substance etc. can be adsorbed on the surface of metal level 102, form pollutant 105.
As shown in Figure 4, adopt the ultraviolet source (not shown) that the surface of metal level 102 is shone, to heat-treat.
Need to prove that the residual chemical solution of slurry is heated and can evaporates, thereby reach the purpose of removal.And residual organic substance is heated and is decomposed into easily carbon dioxide and water.Wherein, carbon dioxide is that gas can break away from from the surface of metal level 102, has reached the effect of removing; And at high temperature also easily evaporation of water, thereby from the surface removal of metal level 102.
By removing the residue of slurry, thereby produce the probability of small embossment in the time of can reducing to deposit other materials again on metal level 102 surfaces.
Because organic substance just can decompose at a lower temperature, preferably, when the surface temperature of metal level 102 was elevated to 350～400 ℃ scope, the chemical solution on metal level 102 surfaces, organic substance etc. can more efficiently be removed.
In the present embodiment, adopt ultraviolet source that the surface of metal level 102 is shone, to increase the surface temperature of metal level 102, realize removing chemical solution, organic purpose.
Because the ultraviolet light wavelength is short, energy is stronger, can improve the efficient that metal level 102 surface temperatures raise, therefore, present embodiment adopts ultraviolet light that metal level 102 is heat-treated.
Can adopt the ultraviolet source of wavelength in 400nm～200nm scope that metal level 102 is heat-treated.
Particularly, because wavelength is that the ultraviolet source of 365nm is Ordinary Light Sources Have in the industry, in the present embodiment, the wavelength of described ultraviolet source is 365nm, the power of described ultraviolet source is in the scope of 100～500W, the time that film surface is shone reaches predetermined temperature so that the surface temperature of metal level 102 raises in 1～5 minute scope.
In addition, ultraviolet source is heat-treated metal level 102 under the vacuum environment of 0.1～0.5torr, can further improve the evaporation efficiency of the chemical solution on metal level 102 surfaces.
In the present embodiment, ultraviolet source need not and metal level 102 Surface Contacts, just can improve the temperature on metal level 102 surfaces, thereby avoid the pollution to metal level 102, also can prevent ultraviolet source and metal level 102 Surface Contacts and the destruction on metal level 102 surfaces of causing.
As shown in Figure 5, on metal level 102, form successively barrier layer 103, dielectric layer 104.
Described barrier layer 103 is used for preventing that copper from spreading, particularly, the material on described barrier layer 103 comprises carborundum (the Nitrogen Doped Silicon Carbon of nitrogen, NDC), in the silicon nitride one or more, can form by the method for chemical vapour deposition (CVD) described barrier layer 103.
In the present embodiment, described dielectric layer is low K dielectric layer (the dielectric coefficient scope is 3.9～2.8) or ultralow K dielectric layer (the dielectric coefficient scope is 2.5～2.8), but the present invention is not restricted to this, also can be for well known to a person skilled in the art other materials.
Particularly, described dielectric layer is low K dielectric layer, and the material of described dielectric layer is SiO
2, among SiOF, SiCOH, SiO, SiCO, the SiCON one or more.
Described dielectric layer is ultralow K dielectric layer, and the material of described ultralow K dielectric layer is carbonado (Black Diamond, BD) etc.
On metal level 102, form successively after barrier layer 103, the dielectric layer 104, scanography is carried out on the surface of dielectric layer 104, can find that the quantity of small embossment greatly reduces.
Need to prove, above-described embodiment is take BEOL as example, but the present invention is not restricted to this, in other embodiments, situation in the time of can also being other operation stages (for example FEOL) application CMP, for example, in FEOL, after substrate forms metal-oxide-semiconductor, during metal plug that each utmost point of metal-oxide-semiconductor is drawn in formation, need to form groove in the interlayer dielectric layer on metal-oxide-semiconductor first, in groove, fill metal material afterwards, remove unnecessary interlayer dielectric layer and metal material by CMP afterwards, by infrared source interlayer dielectric layer and metal surface are heat-treated after the CMP, can make the residual chemical solution evaporation of CMP, make organic substance decomposing, thereby the probability that can reduce to convex to form improves yield.
Need to prove, in above-described embodiment, described infrared source is take ultraviolet source as example, but the present invention is not restricted to this, can also be visible light source (industrial powerful mercury lamp) or infrared light light source (industrial powerful quartzy infrared lamp), it can also be the object that other can radiations heat energy, film surface after adopting described infrared source to CMP is heat-treated, described film surface temperature is raise, can make the chemical solution evaporation, make organic substance decomposing, thereby reduce the pollutant of film surface, reduce the probability at the formed small embossment of described film deposition other materials, and then improved yield.
In addition, infrared source need not to contact with film surface, thereby prevents from polluting or damaging described film surface, has further improved yield.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (14)
1. the manufacture method of a semiconductor device is characterized in that, comprising:
Substrate is provided, forms film at substrate;
Remove unnecessary thin-film material by chemical mechanical milling tech;
Adopt infrared source that film surface is heat-treated.
2. the manufacture method of semiconductor device as claimed in claim 1 is characterized in that, the step that described employing infrared source is heat-treated film surface comprises: make the temperature of described film surface in 350～400 ℃ scope by thermal radiation.
3. the manufacture method of semiconductor device as claimed in claim 2, it is characterized in that, described infrared source is ultraviolet source, and the step that described employing infrared source is heat-treated film surface comprises: adopt described ultraviolet source that film surface is shone to heat-treat.
4. the manufacture method of semiconductor device as claimed in claim 3 is characterized in that, the wavelength of described ultraviolet source is in the scope of 400nm～200nm.
5. the manufacture method of semiconductor device as claimed in claim 4 is characterized in that, the wavelength of described ultraviolet source is 365nm.
6. the manufacture method of semiconductor device as claimed in claim 5 is characterized in that, the power of described ultraviolet source is in the scope of 100～500w, and the time that film surface is shone is in 1～5 minute scope.
7. the manufacture method of semiconductor device as claimed in claim 1 is characterized in that, the step that described employing infrared source is heat-treated film surface comprises: under the vacuum environment of 0.1～0.5torr film surface is heat-treated.
8. the manufacture method of semiconductor device as claimed in claim 2, it is characterized in that, described infrared source is visible light source, and the step that described employing infrared source is heat-treated film surface comprises: adopt described visible light source that film surface is shone to heat-treat.
9. the manufacture method of semiconductor device as claimed in claim 2, it is characterized in that, described infrared source is the infrared light light source, and the step that described employing infrared source is heat-treated film surface comprises: adopt described infrared light light source that film surface is shone to heat-treat.
10. the manufacture method of semiconductor device as claimed in claim 1 is characterized in that, described film is metal level.
11. the manufacture method of semiconductor device as claimed in claim 10 is characterized in that, also be included in layer on surface of metal heat-treated after, on metal level, form successively barrier layer, dielectric layer.
12. the manufacture method of semiconductor device as claimed in claim 11 is characterized in that, the material of described metal level is copper.
13. the manufacture method of semiconductor device as claimed in claim 12 is characterized in that, the material on described barrier layer is the carborundum of nitrating, in the silicon nitride one or more.
14. the manufacture method of semiconductor device as claimed in claim 13 is characterized in that, the material of described dielectric layer is SiO
2, among SiOF, SiCOH, SiO, SiCO, the SiCON one or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110294756.8A CN103035565B (en) | 2011-09-29 | 2011-09-29 | Method for producing semiconductor device |
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|---|---|---|---|
| CN201110294756.8A CN103035565B (en) | 2011-09-29 | 2011-09-29 | Method for producing semiconductor device |
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| CN103035565A true CN103035565A (en) | 2013-04-10 |
| CN103035565B CN103035565B (en) | 2015-07-08 |
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| CN201110294756.8A Active CN103035565B (en) | 2011-09-29 | 2011-09-29 | Method for producing semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943528A (en) * | 2014-03-24 | 2014-07-23 | 上海华力微电子有限公司 | Off-line monitoring method for NDC thin films |
| CN111081539A (en) * | 2019-12-09 | 2020-04-28 | 上海华力微电子有限公司 | Method for forming semiconductor device |
| CN114664732A (en) * | 2022-05-25 | 2022-06-24 | 合肥晶合集成电路股份有限公司 | Semiconductor integrated device and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1263636A (en) * | 1998-02-13 | 2000-08-16 | 精工爱普生株式会社 | Method for producing semiconductor device and heat treating apparatus |
| CN1719584A (en) * | 2004-07-09 | 2006-01-11 | 精工爱普生株式会社 | Method for manufacturing thin film transistor, electro-optical device and electronic apparatus |
| CN101123215A (en) * | 2006-08-11 | 2008-02-13 | 联华电子股份有限公司 | Copper enchasing technology |
-
2011
- 2011-09-29 CN CN201110294756.8A patent/CN103035565B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1263636A (en) * | 1998-02-13 | 2000-08-16 | 精工爱普生株式会社 | Method for producing semiconductor device and heat treating apparatus |
| CN1719584A (en) * | 2004-07-09 | 2006-01-11 | 精工爱普生株式会社 | Method for manufacturing thin film transistor, electro-optical device and electronic apparatus |
| CN101123215A (en) * | 2006-08-11 | 2008-02-13 | 联华电子股份有限公司 | Copper enchasing technology |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943528A (en) * | 2014-03-24 | 2014-07-23 | 上海华力微电子有限公司 | Off-line monitoring method for NDC thin films |
| CN103943528B (en) * | 2014-03-24 | 2016-09-28 | 上海华力微电子有限公司 | Monitored off-line method for NDC thin film |
| CN111081539A (en) * | 2019-12-09 | 2020-04-28 | 上海华力微电子有限公司 | Method for forming semiconductor device |
| CN114664732A (en) * | 2022-05-25 | 2022-06-24 | 合肥晶合集成电路股份有限公司 | Semiconductor integrated device and manufacturing method thereof |
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| CN103035565B (en) | 2015-07-08 |
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