CN103595419A - N-bit binary-system electro-optic odd-even checker - Google Patents
N-bit binary-system electro-optic odd-even checker Download PDFInfo
- Publication number
- CN103595419A CN103595419A CN201310579907.3A CN201310579907A CN103595419A CN 103595419 A CN103595419 A CN 103595419A CN 201310579907 A CN201310579907 A CN 201310579907A CN 103595419 A CN103595419 A CN 103595419A
- Authority
- CN
- China
- Prior art keywords
- signal
- mrr
- micro
- binary system
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an odd-even check technology in the technical field of optical communication. An electro-optic odd-even checker is formed by N microring resonators (MRRs) and two bent nanowire waveguides, wherein the MRRs are made of semiconducting material on insulators, each MRR is respectively coupled with the two nanowire waveguides, and a spacer or an insulator is arranged between every two adjacent MRRs and can prevent thermal crosstalk between the two adjacent MRRs. Compared with an electric odd-even checker, the electro-optic odd-even checker has the advantages of being small in size, low in power consumption, high in speed, good in expansibility and capable of being integrated with an electric element conveniently, and has excellent application prospects in an optical communication network.
Description
Technical field
The present invention relates to optical communication technique field, relate in particular to a kind of N position binary system electric light parity checker, this device is specially adapted to optical communication in the future and photometry is calculated field.
Background technology
Fast development along with semiconductor technology, the integrated level of chip or integrated circuit is more and more higher, CPU can obtain the work dominant frequency of GHZ level, but the power consumption that the serious problems that high primary frequency is brought are unit are circuit sharply rises, meanwhile because the size of integrated component is further dwindled, electric leakage also cannot well solve with heat dissipation problem, and Moore's Law mythology is constantly challenged.There is some evidence, adopt electronics to do information carrier and can not meet people to the requirement of processing speed faster, and optical communication and optical computing system are usingd photon as information carrier, using up interconnection replaces wire interconnects, photon hardware to replace electronic hardware, with optical operation, replace electric computing, by optical fiber and various optical element, form integrated optical circuit, thereby can greatly improve the ability to data operation, transmission and storage, cause increasing scientific research personnel's attention.
Electric light parity checker is requisite element in optical communication and computing network.Traditional electricity parity checker is to adopt gate circuit to realize, and it all exists very large drawback at aspects such as power consumption, time delays.
Summary of the invention
The invention reside in a kind of N position binary system electric light parity checker is provided, to solve speed, power consumption, the gate delay in traditional electricity parity checker and the bottleneck problems such as race and hazard of being brought by gate delay, expect that it plays a significant role under retainer member volume prerequisite little, low in energy consumption and easy of integration in Photonic Communications in the future and computing system.
For achieving the above object, the invention provides a kind of N position binary system electric light parity checker, this electric light parity checker is realized by the N making with the semi-conducting material on insulator micro-ring resonator MRR (microring resonator) and two crooked Nanowire Waveguides, each micro-ring resonator MRR is coupled with two Nanowire Waveguides respectively, between two adjacent micro-ring resonator MRR, have to stop and produce interval or the insulation that heat is crosstalked between the two, its input is N position binary system electrical signal sequence to be verified and a continuous light signal in operating wave strong point, what export is to the light signal after signal of telecommunication verification, wherein the elementary cell of each micro-ring resonator MRR is the micro-ring resonator MRR optical switch of band heat modulation mechanism or electrical modulation mechanism, the process of its verification is: the continuous laser of inputting particular job wavelength at an optical port of device, the N position binary system signal of telecommunication to be verified acts on respectively N MRR, and the form with low and high level acts on MRR according to 1 and 0 state, the corresponding parity check result of the signal of telecommunication of inputting with N position with the formal output of light logic at signal output port, thereby completed the binary electric light verification in N position.
A kind of N of the present invention position binary system electric light parity checker can adopt silicon SOI (Silicon-on-Insulator) the material preparation on insulator.
N of the present invention position binary system electric light parity checker, the N position binary system signal of telecommunication to be verified is as follows to the type of action of MRR separately: when the modulation signal on being added in micro-ring is logical zero, MRR is at operating wave strong point resonance not, and light signal is straight-through; When the modulation signal on being added in micro-ring is logical one, MRR is on operating wave strong point resonance, road under light signal.
Silicon-based integrated N position binary system electric light parity checker of the present invention, the logical value of N to be verified the binary system signal of telecommunication is wanted Accurate align in time, and each logical value is precise synchronization in time.
The N that the present invention inputs in application binary system signal of telecommunication is the sequence of electricity logic to be verified, output be the light signal after verification.
The MRR that is with heat modulation mechanism or electrical modulation mechanism of the present invention can adopt heat modulation in the less demanding situation of signal transmission rate (below million magnitudes), in high speed (lucky magnitude) transmission system, need to adopt electrical modulation.
In such scheme, this parity checker is realized the signal of telecommunication and to the checking procedure of light signal is: the continuous light of a port input particular job wavelength of device, input electrical signal is any N position binary combination.While having odd number logical one in input logic sequence, odd output P
obe 1, even parity check output P
ebe 0; While having even number 1 in input logic sequence, odd output P
obe 0, even parity check output P
ebe 1.Two light signal output ends at device obtain respectively and are carried in N the parity signal output that the modulation signal sequence on micro-ring is corresponding like this.Device has just completed the parity check output that N position electrical signal is input to 2 optical signallings, and this is also purpose of the present invention.
In the present invention, N position electrical signal sequence to be verified (being added in respectively the signal of telecommunication on N micro-ring) needs Accurate align in time, i.e. precise synchronization in time.Under high speed operation pattern, need to carry out to electrode the analyses and simulations of special design and electromagnetic compatibility aspect.
In the present invention, described light signal can transmit and directly enter next stage and process in optical fiber.
Tool of the present invention has the following advantages:
1, silicon-based integrated N position binary system electric light parity checker provided by the invention, has utilized the electric light parity checker of the natural characteristic realization of light to replace traditional electricity parity checker, thereby can realize the information processing of high-speed high capacity.Utilize ripe technology, make the integrated level of device high, volume is little, low in energy consumption, favorable expandability, is convenient to electricity component integratedly, to be desirably in optical communication and optical computing system, plays an important role.
2, silicon-based integrated N position binary system electric light parity checker provided by the invention, uses this device to carry out optics parity check to the signal of telecommunication.In this structure, each optical switch based on micro-ring resonator is independently, and all switches are all concurrent workings simultaneously, this time delay that just means each switch can't accumulate, and the result of terminal check is in the output of optics output, therefore the verification speed of whole device is wanted soon much with electricity parity checker relatively with the form of light beam.In optical communication and computing network, there is good application prospect.
accompanying drawing explanation
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in more detail.
N of the present invention position binary system electric light parity checker, by N disc waveguide and two curved waveguides, formed, referring to accompanying drawing 1, its basic structure is the optical switch based on MRR, only the MRR by a kind of structure forms, and adopts silica-based nanowire waveguide fabrication, by the N making with the semi-conducting material on insulator micro-ring resonator MRR and two crooked Nanowire Waveguides, is realized, each micro-ring resonator MRR is coupled with two Nanowire Waveguides respectively, referring to accompanying drawing 2.Between two adjacent micro-ring resonator MRR, have to stop and produce interval or the insulation that heat is crosstalked between the two.
The MRR structure of band heat modulation mechanism of the present invention or electrical modulation mechanism is shown in Fig. 3.
The input of device of the present invention is N position binary system electrical signal sequence to be verified and a continuous light signal in operating wave strong point, what export is to the light signal after signal of telecommunication verification, wherein the elementary cell of each micro-ring resonator MRR is the micro-ring resonator MRR optical switch of band heat modulation mechanism or electrical modulation mechanism, the process of its verification is: the continuous laser of inputting particular job wavelength at an optical port of device, the N position binary system signal of telecommunication to be verified acts on respectively N MRR, and the form with low and high level acts on MRR according to 1 and 0 state, the corresponding parity check result of the signal of telecommunication of just inputting with N position with the formal output of light logic at signal output port, thereby completed the binary electric light verification in N position.
Have N signal of telecommunication input to be verified and a continuous light in operation wavelength to input, output is that N electrical signal sequence carried out can in optical fiber, transmitting the light signal of the information processing that directly enters next stage after verification.Suppose MRR resonance when the modulation voltage being carried on micro-ring is high level, MRR resonance not during low level, at the output of light signal, can obtain the optics verification of N position electricity input signal, thereby this device has just completed the function of N position binary system electric light parity check.
MRR structure of the present invention, can adopt SOI, SIN, III-V family material to realize.The scheme of optimization of the present invention realizes based on SOI material, and its outstanding advantage is; The CMOS technology that technology utilization is ready-made, makes device volume little, low in energy consumption, and favorable expandability is convenient to electricity component integrated.
The material properties that feature performance benefit of the present invention and it adopt and the structural relation of device are close.
Aspect material: what the present invention adopted is silicon (Silicon-On-Insulator, the SOI) material in dielectric substrate.SOI refers at SiO
2the one deck of growing on insulating barrier has certain thickness monocrystalline silicon thin film, and its technique is compatible with the CMOS technique of microelectronic extensive use now.The silicon waveguide that utilizes SOI material to make, its sandwich layer is that Si(refractive index is 3.45), covering is SiO
2(refractive index is 1.44), the refringence of covering and sandwich layer is very large like this, so this waveguide is forced to such an extent that its bending radius can be very little to the limitation capability of light field very much.
In structure aspects: elementary cell of the present invention is the micro-ring resonator based on silica-based nanowire waveguide, and it is a kind of diverse in function, superior performance, the integrated optical element being widely studied in recent years.Because the radius of disc waveguide can be as small as 1.5 microns, thereby make the area of device very little, on chip piece, can produce a plurality of devices.Conventional waveguide device is (as LiNbO
3) bending radius generally in millimeter centimetre magnitude even, chip occupying area is larger, on chip piece, conventionally can only put next device.Device architecture of the present invention is very compact, can realize device High Density Integration, and the loss while reducing discrete device coupling reduces the packaging cost of device simultaneously.
Below by analyzing the transmitting procedure of light signal in the MRR shown in Fig. 2, its operation principle of brief description (straight wave guide between 1,2 ports is called a, and the straight wave guide between 3,4 ports is called b):
Suppose that light signal is from input 1 input, when signal is during through coupled zone (scope at straight wave guide and the nearest place of curved waveguide), light signal is coupled in a subtle way in ring by evanscent field coupling meeting, meets condition of resonance (m * λ=N
g* 2 π * R) light signal can be downloaded by MRR, and signal, will be by coupled zone in straight-through end 2 outputs for the signal that does not meet condition of resonance from downloading end 3 outputs.Port 4 is referred to as to upload end.This MRR is a symmetrical structure, if light signal is inputted from uploading end 4, its principle is the same with light signal from input 1 input, no longer repeats here.
Upper surface analysis be the Static performance characteristic of MRR, MRR can make road under some wavelength signals (meeting the wavelength of condition of resonance) regularly, some wavelength signals leads directly to (not meeting the wavelength of condition of resonance).During real work, need MRR resonance wavelength dynamically adjustable (being dynamic filter) to realize more complicated function.By condition of resonance (m * λ=N above
g* 2 π * R) can see, regulate resonance wavelength to realize dynamic filter, the physical quantity that can change has radius R and the group index N thereof of disc waveguide
g.The former just decides after technique completes, and cannot regulate.Can only be by regulating the group index N of disc waveguide
gchange the resonance wavelength of MRR.Group index changes with the variations in refractive index of material.Thereby the refractive index that generally can take two kinds of methods to change material changes the group index of material: the one, by material heating (concrete way is thermoae as heating by MOCVD deposit layer of metal in silicon waveguide, then to thermoae two ends making alive) thus the temperature that changes material changes the refractive index of material that is to say so-called thermo-optic effect.The 2nd, by carrier injection, change the refractive index (electro optic effect) of material.Generally in High Speed System, adopt electro optic effect.Thereby the present invention be by thermoae to silicon waveguide heat to change the light signal that the refractive index Dynamic Selection of material need to download and need straight-through light signal, make the light signal can be in downloading end or in straight-through end output under dynamically controlling.
The heat modulation mechanism that Figure 3 shows that MRR, powers up rear metal electrode heating, and thermal field conducts to waveguide, the temperature of waveguide is changed, the group index N of disc waveguide
gchange, the resonance wavelength of MRR changes thereupon.
Fig. 1 is the structural representation of silicon-based integrated N position binary system electric light parity checker.Monochromatic continuous light signal (CW) in light signal input Input input in operation wavelength, changes the resonance wavelength of micro-ring thereby then respectively N micro-ring loaded to upper modulation voltage to micro-ring heating.If micro-ring is resonance when modulation voltage is high level, when modulation voltage is high level, light signal will be exported from downloading end, and when modulation voltage is low level, light signal will be from straight-through end output.Logic for high level ' 1 ' represents, logic low level for ' 0 ' represents, for light signal: Output optical power is higher to be represented by logic ' 1 ', and Output optical power is lower with logic ' 0 ' expression.N MRR uses respectively R
1, R
2..., R
n-1and R
nrepresent.Through above definition, by the structural representation of device, obtained: for 2 of N electrical signal
nplanting various combination state (N position is from full 0 to complete 1) has two kinds of different optical combinations (0 1,1 0) state corresponding with it.Principle is as follows: when N position electrical signal is 0 ... within 00 o'clock, (first, second, third and fourth is until N position logical value represents to be respectively added in R
1, R
2..., R
n-1, R
non level), R
1, R
2..., R
n-1, R
nresonance not, optics output port P
ostate be 0, P
estate be 1, so the assembled state of light signal output end mouth is 01.For other 2
n-1 state in like manner can obtain.The present invention has just completed the function of N position binary parity check device like this.Its logic true value table is as follows:
In conjunction with Fig. 1, the verification that how to utilize the silicon-based integrated complete N of binary system electric light parity checker position, N position electrical signal to two optical signalling has been described above.From truth table above, we can see the N position binary system electric light parity function that the present invention has more clearly.
It should be noted that: in the device course of work, a N to be verified electrical signal in time must precise synchronization.In High Speed System, need to reach synchronous requirement by special electrode design, special placement-and-routing and EMC analysis.
Above-described specific embodiment; it is only the further description to object of the present invention, technical scheme and beneficial effect; institute it should be noted and the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all; any modification of making, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in.
Claims (4)
1. a N position binary system electric light parity checker, it is characterized in that this electric light parity checker realized by the N making with the semi-conducting material on insulator micro-ring resonator MRR and two crooked Nanowire Waveguides, each micro-ring resonator MRR is coupled with two Nanowire Waveguides respectively, between two adjacent micro-ring resonator MRR, have to stop and produce interval or the insulation that heat is crosstalked between the two, its input is N position binary system electrical signal sequence to be verified and a continuous light signal in operating wave strong point, what export is to the light signal after signal of telecommunication verification, wherein the elementary cell of each micro-ring resonator MRR is the micro-ring resonator MRR optical switch of band heat modulation mechanism or electrical modulation mechanism, the process of its verification is: the continuous laser of inputting particular job wavelength at an optical port of device, the N position binary system signal of telecommunication to be verified acts on respectively N MRR, and the form with low and high level acts on MRR according to 1 and 0 state, the corresponding parity check result of the signal of telecommunication of just inputting with N position with the formal output of light logic at signal output port, thereby completed the binary electric light verification in N position.
2. a N position binary system electric light parity checker, is characterized in that the silicon SOI material preparation on insulator for this electric light parity checker.
3. N according to claim 1 and 2 position binary system electric light parity checker, it is characterized in that the N position binary system signal of telecommunication to be verified is as follows to the type of action of MRR separately: when the modulation signal on being added in micro-ring is logical zero, MRR is at operating wave strong point resonance not, and light signal is straight-through; When the modulation signal on being added in micro-ring is logical one, MRR is on operating wave strong point resonance, road under light signal.
4. silicon-based integrated N position binary system electric light parity checker according to claim 3, is characterized in that: the logical value of N to be verified the binary system signal of telecommunication is wanted Accurate align in time, and each logical value is precise synchronization in time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310579907.3A CN103595419A (en) | 2013-11-19 | 2013-11-19 | N-bit binary-system electro-optic odd-even checker |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310579907.3A CN103595419A (en) | 2013-11-19 | 2013-11-19 | N-bit binary-system electro-optic odd-even checker |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103595419A true CN103595419A (en) | 2014-02-19 |
Family
ID=50085423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310579907.3A Pending CN103595419A (en) | 2013-11-19 | 2013-11-19 | N-bit binary-system electro-optic odd-even checker |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103595419A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104238233A (en) * | 2014-09-17 | 2014-12-24 | 兰州大学 | Reconfigurable guiding logic device based on multiple-wavelength single-waveguide multiple-ring cascade structure |
WO2015161537A1 (en) * | 2014-04-24 | 2015-10-29 | 电子科技大学 | Design method for micro-ring optical switch chip |
CN112702067A (en) * | 2021-01-20 | 2021-04-23 | 太原师范学院 | All-optical parity checker based on micro-ring resonator thermal nonlinear effect |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6643421B1 (en) * | 1999-09-21 | 2003-11-04 | Lnl Technologies, Inc. | Wavelength-slicing architecture for wavelength demultiplexing using micro-ring resonators |
CN101872101A (en) * | 2009-04-22 | 2010-10-27 | 中国科学院半导体研究所 | Silicon-based integration optical xor and xnor arithmetic unit and array thereof |
CN102062988A (en) * | 2010-12-27 | 2011-05-18 | 中国科学院半导体研究所 | Optical logic gate based on double parallel microring resonators |
-
2013
- 2013-11-19 CN CN201310579907.3A patent/CN103595419A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6643421B1 (en) * | 1999-09-21 | 2003-11-04 | Lnl Technologies, Inc. | Wavelength-slicing architecture for wavelength demultiplexing using micro-ring resonators |
CN101872101A (en) * | 2009-04-22 | 2010-10-27 | 中国科学院半导体研究所 | Silicon-based integration optical xor and xnor arithmetic unit and array thereof |
CN102062988A (en) * | 2010-12-27 | 2011-05-18 | 中国科学院半导体研究所 | Optical logic gate based on double parallel microring resonators |
Non-Patent Citations (2)
Title |
---|
YONGHUI TIAN, ET AL.: "Directed XOR/XNOR Logic Gates Using U-to-U Waveguides and Two Microring Resonators", 《IEEE PHOTON TECHNOL LETT》 * |
徐学俊 等: "SOI 纳米线波导和相关器件研究进展", 《半导体光电》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015161537A1 (en) * | 2014-04-24 | 2015-10-29 | 电子科技大学 | Design method for micro-ring optical switch chip |
CN104238233A (en) * | 2014-09-17 | 2014-12-24 | 兰州大学 | Reconfigurable guiding logic device based on multiple-wavelength single-waveguide multiple-ring cascade structure |
CN112702067A (en) * | 2021-01-20 | 2021-04-23 | 太原师范学院 | All-optical parity checker based on micro-ring resonator thermal nonlinear effect |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102156507B (en) | Two-bit optical decoder based on micro-ring resonator | |
CN104503184B (en) | A kind of line electric light priority encoder of new 4 line 2 based on micro-ring resonator | |
CN106707657B (en) | A kind of control swap gate optical logic device based on micro-ring resonator | |
CN110703851B (en) | Optical matrix vector multiplier based on mode multiplexing | |
CN102629067B (en) | Single-bit binary system optical numeric comparison device based on micro-ring resonator | |
CN102520904B (en) | Binary optical adder based on micro-ring resonators | |
CN103529521A (en) | Serially connected optical switch based photon delay structure and numerical-control integrated photon delay device | |
CN104238233A (en) | Reconfigurable guiding logic device based on multiple-wavelength single-waveguide multiple-ring cascade structure | |
CN108182049B (en) | Binary optical full adder based on micro-ring resonator | |
CN102522995A (en) | Silicon-based integrated two-position binary electro-optical encoder | |
CN103595419A (en) | N-bit binary-system electro-optic odd-even checker | |
CN108519642A (en) | A kind of integrated optical mode switch of compatible wavelength-division multiplex and mode division multiplexing function | |
CN110275365B (en) | Binary all-optical one-out-of-four data selector | |
CN113900280A (en) | Polarization independent optical switch | |
CN109491175B (en) | Reconfigurable steering logic device based on mode multiplexing | |
CN104503027B (en) | The four multi-port optical routers based on micro-ring resonant photoswitch | |
CN104678676B (en) | A kind of reciprocal optical logical device based on micro-ring resonator | |
CN104865772B (en) | A kind of three value optics reversible logic devices based on micro-ring resonator | |
CN102540625B (en) | All-optical logic gate device based on nanowire waveguides of multislot silicon substrate | |
CN107346047B (en) | Optical switch | |
CN104503185B (en) | A kind of binary optic subtracter based on micro-ring resonator | |
CN104793428A (en) | Silicon substrate electro-optical OR-AND integrated logic device | |
CN210136383U (en) | Binary all-optical one-out-of-four data selector | |
Gaburro | Optical interconnect | |
CN106301381B (en) | Electric light 3-8 decoder |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140219 |
|
RJ01 | Rejection of invention patent application after publication |