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CN103325861A - 具有多晶硅掺杂区域的背面接触太阳能电池的沟槽工艺和结构 - Google Patents

具有多晶硅掺杂区域的背面接触太阳能电池的沟槽工艺和结构 Download PDF

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CN103325861A
CN103325861A CN2013101751111A CN201310175111A CN103325861A CN 103325861 A CN103325861 A CN 103325861A CN 2013101751111 A CN2013101751111 A CN 2013101751111A CN 201310175111 A CN201310175111 A CN 201310175111A CN 103325861 A CN103325861 A CN 103325861A
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戴维·D·史密斯
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Abstract

一种太阳能电池包括在诸如硅晶片之类的衬底（103）背面（106）上的多晶硅P型和N型掺杂区域。沟槽结构（104）将P型掺杂区域（101）和N型掺杂区域（102）分开。P型和N型掺杂区域中的每个均可以形成在薄电介质层（113）上。沟槽结构（104）可以包括具有纹理的表面（114）,该表面用来增加太阳能辐射收集。其他优点之一是：形成的结构通过在相邻的P型和N型掺杂区域之间提供隔离来提高效率，从而防止掺杂区域会接触的空间电荷区域中的复合。

Description

具有多晶硅掺杂区域的背面接触太阳能电池的沟槽工艺和结构
本申请是基于申请日为2009年4月29日、申请号为200980122033.0（国际申请号为PCT/US2009/042130）、发明创造名称为“具有多晶硅掺杂区域的背面接触太阳能电池的沟槽工艺和结构”的中国专利申请的分案申请。
相关申请的交叉引用
本申请要求于2008年6月12日提交的美国临时申请No.61/060,921的优先权，其以引文方式整体并入。
技术领域
本发明总的来说涉及太阳能电池，更具体地但并非唯一地涉及太阳能电池制作工艺和结构。
背景技术
太阳能电池是众所周知的将太阳辐射转换成电能的装置。太阳能电池可以在半导体晶片上用半导体处理技术制作。太阳能电池包括P型和N型掺杂区域。太阳能电池上接受的太阳辐射产生电子和空穴，这些电子和空穴迁移到掺杂区域，进而在掺杂区域之间产生电压差。在背面接触的太阳能电池中，掺杂区域和与掺杂区域耦合的叉指型金属接触指都在太阳能电池的背面。接触指允许外部电路连接到太阳能电池并由太阳能电池供电。
效率是太阳能电池的重要特征，这是因为效率与太阳能电池产生电能的能力直接相关。因此，通常需要增加太阳能电池效率的技术。本发明通过提供用于制作具有新颖的太阳能电池结构的工艺能够提高太阳能电池的效率。
发明内容
在一个实施例中，一种太阳能电池包括在诸如硅晶片之类的衬底的背面上的多晶硅P型和N型掺杂区域。沟槽结构将P型掺杂区域和N型掺杂区域分开。P型和N型掺杂区域中的每一个均可以形成在薄电介质层上。所述沟槽结构可以包括用来增加太阳能辐射收集的纹理表面。其他优点之一是：形成的结构通过在相邻的P型和N型掺杂区域之间提供隔离来提高效率，从而防止掺杂区域会接触的空间电荷区域中的复合（recombination）。
所属领域的具有一般技能的人员在阅读包括附图和权利要求的本公开的整体之后，本发明的这些和其他特征将是显而易见的。
附图说明
图1和图2显示根据本发明实施例的太阳能电池结构。
图3、图4、图5、图6、图7A、图8A、图7B、图8B、图9和图10说明根据本发明实施例的太阳能电池的制作。
图11显示对传统太阳能电池和根据本发明实施例的太阳能电池的性能进行比较的黑色I-V曲线。
图12显示制作根据本发明实施例的太阳能电池的方法的流程图。
不同图示中的相同参考标记表示相同或者相似的元件。这些附图不按比例绘制。
具体实施方式
在本公开中，提供诸如材料、工艺参数、工艺步骤和结构的示例之类的多个具体细节，以提供对本发明实施例的全面理解。但是，本领域的具有普通技能的技术人员会认识到，在没有一个或者多个具体细节的情况下本发明也可以实施。在其他情况下，为了避免使本发明特点不突出，为人熟知的细节没有显示或者说明。
在衬底中含有P型和N型掺杂区域的太阳能电池中，P型和N型掺杂区域可以被形成为具有分开的或者邻接的边界。然而，发明者发现，对于多晶硅掺杂区域而言并非如此，这是由于多晶硅中的电荷载流子寿命很短，所以在多晶硅掺杂区域接触的空间电荷区域中的复合的几率很高。就是说，发明者发现接触多晶硅掺杂区域对效率带来不利影响。本发明的实施例总的来说提出了与多晶硅掺杂区域和多晶硅形成的掺杂区域相关的问题。
图1示意地显示了根据本发明实施例的太阳能电池结构的截面图。在图1的例子中，该太阳能电池是背面接触的太阳能电池，其中掺杂区域101和102在与正面105相对的背面106上。在正常工作期间正面105面向太阳。掺杂区域101和102在薄电介质层113上形成。形成的电介质层113厚度可为5埃到40埃。在一个实施例中，电介质层113包括在衬底103表面上热生长到厚度为20埃的二氧化硅。电介质层113还可包括氮化硅。有利的是，电介质层113允许表面钝化。掺杂区域101和102的多晶硅施加了横跨电介质层113的电场，该电场在电介质界面排斥少数载流子并且累积多数载流子。
在图1的例子中，掺杂区域101是P型掺杂区域，而掺杂区域102是N型掺杂区域。这个例子中，衬底103包括N型硅晶片。可以理解的是，在对该结构的其余部分进行适当改变的情况下，衬底103也可以包括N型硅晶片或者其他晶片。在任意给定的太阳能电池中都有几个P型和N掺杂区域，但是为了说明清楚起见，在图1中仅显示每种掺杂区域中的一个。
掺杂区域101和102可以包括通过低压化学汽相沉积（LPCVD）的方式形成的厚度约为2000埃的掺杂多晶硅。掺杂区域101可以包含用P型掺杂剂（例如，硼）掺杂的多晶硅，掺杂区域102可以包含用N型掺杂剂（例如，磷）掺杂的多晶硅。多晶硅可以在薄电介质层113上沉积然后通过扩散进行掺杂。多晶硅还可以在沉积到电介质层113上之前进行预掺杂。因为适合高温处理，多晶硅是掺杂区域101和102的优选材料，从而允许增大热预算（thermal budget）。
如图1所示，掺杂区域101和102被沟槽104分开，沟槽104充当掺杂区域101和102之间的间隙。
例如，沟槽104可以通过激光挖槽或者传统刻蚀的方法形成。在一个实施例中，沟槽104大约100微米宽。沟槽104可以在扩散步骤前或者扩散步骤后形成，所述扩散步骤对多晶硅掺杂区域101和102进行掺杂。如果沟槽104在扩散步骤前形成，则钝化区域112可以包含扩散步骤中形成的N型钝化区域。
在一个实施例中，沟槽104的形成工艺不仅形成沟槽104而且在沟槽104的表面上形成随机纹理表面114。随机纹理表面114提高了入射到太阳能电池背面的光的太阳辐射收集，也就是，太阳能电池具有两面结构。包含氢氧化钾和异丙醇（isopropyl alcohol）的湿法蚀刻工艺可以用于形成沟槽104和使表面114带有随机金字塔的纹理。沟槽104可以被形成为挖入衬底103内1到10微米（例如，3微米）。
氮化硅107形式的电介质在沟槽104中沉积。氮化硅107优选地具有相对较大的正的固定电荷密度来使沟槽104下面的硅表面处于累积状态并且提供良好的表面钝化。氮化硅107的正的固定电荷密度可作为用来形成氮化硅107的沉积工艺的一部分自然产生。在一个实施例中，氮化硅107通过等离子体增强化学汽相沉积（PECVD）方法形成约为400埃的厚度。形成的累积层排斥少数载流子（也就是，在N型材料中的带正电荷的空穴）。沟槽104还防止在多晶硅中形成空间电荷区域。空间电荷反而在P型多晶硅下面的单晶硅中形成。在这个区域中，因为晶界（grain boundaries），寿命不缩减，因此寄生的复合会得到抑制。该空间电荷区域的一部分还与在沟槽104中的晶片表面相交。氮化硅107中的正电荷降低该空间电荷区域的影响并使该区域变窄。
制作图1的太阳能电池结构的示例工艺流程包括在衬底103的背面表面上形成薄电介质层113，在薄电介质层113上形成未掺杂的多晶硅层，将多晶硅层掺杂为P型掺杂区域101和N型掺杂区域102，蚀刻掺杂的多晶硅层以形成沟槽104和纹理表面114，形成钝化区112，以及在沟槽104中形成氮化硅107。替代在未掺杂多晶硅层上扩散掺杂剂，掺杂区域101和102也可以通过用传统的沉积、掩模、蚀刻技术在电介质层113上沉积预掺杂多晶硅来形成。与纹理表面相比，氮化硅107优选地具有平坦的表面。然而，氮化硅107的平面度不关键而且不需要附加的平面化步骤。例如，氮化硅107的平面度可以是沉淀形成的那样。沟槽104可以在掺杂区域101和102的掺杂之前或之后形成。
参考图2，叉指型金属接触指108和109可以穿过氮化硅107形成以分别与掺杂区域101和102进行电连接。外部电路可以附接叉指型金属接触指108和109以连接到太阳能电池并且由太阳能电池供电。在图2的例子中，金属接触指108可以连接到正电接线端，金属接触指109可以连接到负电接线端。
图1的沟槽结构以几种方式解决了前述与多晶硅寄生空间电荷复合相关的问题。首先，沟槽104将掺杂区域101和102分开，从而使它们在物理上不接触。这样防止空间电荷区域在任一多晶硅薄膜中存在。其次，在沟槽104下面形成的累积层排斥少数载流子来改善表面钝化。第三，沟槽104中的纹理表面114增加太阳辐射收集。这些特点有利地有助于增大太阳能电池的效率。
图3到图10显示了说明根据本发明实施例的太阳能电池的制作的截面图。太阳能电池中具有多个P型掺杂区域和N型掺杂区域，但是为了便于清晰说明，在以下例子中，图中只显示制作每种掺杂区域的一个。
图3到图10的实施例从衬底303背面表面上的薄电介质层313的形成开始（图3）。举例来说，衬底303可以包括N型硅晶片。电介质层313可以形成为5埃到40埃（举例来说，20埃）的厚度。在一个实施例中，电介质层313包括在衬底303表面上热生长的二氧化硅。举例来说，电介质层313也可以包括氮化硅。未掺杂的多晶硅层322然后在电介质层313上形成。比如，通过LPCVD方法，多晶硅层322可以形成约为2000埃的厚度。接下来在多晶硅层322上形成掺杂二氧化硅层323（图4）。二氧化硅层323充当后续形成的掺杂区域（该例子中为P型掺杂区域301（见图7A或8B））的掺杂剂源。二氧化硅层323因此可以用P型掺杂剂，比如硼，进行掺杂。掺杂二氧化硅层323被图案化为保留在电介质层322上的要形成P型掺杂区域301（图5）的区域。二氧化硅层323可以通过APCVD方法形成约1000埃的厚度。
掺杂二氧化硅层324在二氧化硅层323和多晶硅层322上形成（图6）。二氧化硅324充当后续形成的掺杂区域（该例子中为N型掺杂区域302（见图7A或8B））的掺杂剂源。二氧化硅324因此可用N型掺杂剂，比如磷，进行掺杂。二氧化硅324可以通过APCVD的方法形成约为2000埃的厚度。
将掺杂区域分开的沟槽可以在第一沟槽形成工艺中在掺杂区域形成之前形成或者在第二沟槽形成工艺中在掺杂区域形成之后形成。图7A和8A说明第一沟槽形成工艺的工艺步骤，而图7B和8B说明第二沟槽形成工艺的工艺步骤。两个沟槽形成工艺都可从图6开始而且继续到图9。
在第一沟槽形成工艺中，热驱入（drive-in）步骤将掺杂剂从二氧化硅323和324扩散到下面的多晶硅层322，因此在多晶硅层322中形成P型和N型掺杂区域，掺杂区域被相应地标记为P型掺杂区域301和N型掺杂区域302（图7A）。热驱入步骤可以通过加热图6的结构来进行。优选的驱入条件给出例如大于1e20cm-3的重掺杂的多晶硅层，其在整个薄膜厚度上是均匀的，而且在多晶硅下面有非常少的掺杂，举例来说，等于或小于1e18cm-3。热驱入步骤使二氧化硅323下面的多晶硅层322形成P型掺杂区域301，以及使二氧化硅324下面的多晶硅层322形成P型掺杂区域302。
二氧化硅324、二氧化硅323、掺杂区域301、掺杂区域302和薄电介质层313被蚀刻以形成沟槽304（图8A）。沟槽蚀刻可以包括多步骤蚀刻工艺，其中最后的蚀刻步骤结束于衬底303上。举例来说，沟槽304可以约为100微米宽。然而，只要Ｐ型掺杂区域301和Ｎ型掺杂区域302彼此不接触，对沟槽304的最小宽度没有限制。沟槽304可以通过包括激光挖槽的传统刻蚀工艺来形成。在一个实施例中，沟槽304具有用于提高太阳能辐射收集效率的带纹理的表面314。在一个实施例中，包括氢氧化钾和异丙醇的湿法蚀刻工艺用来形成沟槽304和使表面314带有随机金字塔的纹理。沟槽304可以向衬底303内延伸1到10微米，举例来说，3微米。
薄（小于200埃，比如100埃）的钝化层310可以在沟槽304的表面314上形成。举例来说，钝化层310可以包括在表面314上热生长的二氧化硅或者沉积的氮化硅层。
在第二沟槽形成工艺中，图6的结构中的二氧化硅324、二氧化硅322和薄电介质层313被蚀刻以形成沟槽304（图7B）。带有纹理的表面314在沟槽304的表面形成。除沟槽在太阳能电池掺杂区域形成前形成之外，该沟槽蚀刻与第一沟槽形成工艺中的基本相同。
执行热驱入步骤来将掺杂剂从二氧化硅层323和324扩散到下面的多晶硅层322，从而像在第一沟槽形成工艺中一样形成掺杂区域301和302（图8B）。在这种情况下，在第二沟槽形成工艺中，在扩散工艺期间，在沟槽304下面的衬底303中形成钝化区域315。钝化区域315可以包含扩散的N型掺杂剂。在一个实施例中，钝化区域315通过在热驱入过程中在扩散炉中引入POCl3（phosphorus chloride oxide）形成。钝化区域315具有与图1中的钝化区域112相同的功能。
在第一和第二沟槽形成工艺中，沟槽304都充当将P型掺杂区域301和N型掺杂区域302物理分开的间隙。太阳能电池的处理从图8A或图8B继续到图9。
从图9继续，在沟槽304中形成氮化硅层307形式的电介质。在图9的例子中，氮化硅层307也在层323和324上形成。氮化硅层307优选地具有相对较大的正的固定电荷密度来使沟槽304下面的硅表面处于累积状态并提供良好的表面钝化。举例来说，氮化硅层307上的正的固定电荷密度可以作为PECVD工艺的一部分自然产生。在一个实施例中，氮化硅307通过PECVD的方法形成约为400埃的厚度。氮化硅307优选地具有平坦的（举例来说，如沉积形成的那样）表面。在图9和图10中，钝化区域312代表钝化层310（见图8A）或者钝化区域315（见图8B），具体取决于使用的沟槽形成工艺。
叉指型金属接触指308和309然后可以穿过氮化硅307形成，以各自经由层323和324与掺杂区域301和302电连接（图10）。外部电路可以附接到叉指型金属接触指308和309，以连接到太阳能电池并且由太阳能电池供电。在图10的例子中，金属接触指308可与正电接线端耦合，而金属接触指309可与负电接线端耦合。形成的太阳能电池提供与图1的太阳能电池相同的优势。
图11显示传统的太阳能电池和根据本发明实施例的太阳能电池的性能对比的黑色I-V（即，电流-电压）曲线。因为这些曲线是在太阳能电池上没有直接的太阳辐射照射的条件下测量的，所以曲线I-V是“黑色”的。
这些I-V曲线是针对在N型硅和P型掺杂区域之间形成的二极管的曲线。在图11的例子中，水平轴代表二极管两端的电压，竖直轴代表流过二极管的电流。曲线401是传统的具有接触的P型和N型多晶硅掺杂区域的太阳能电池的I-V曲线，曲线402是典型的SunpowerCorporation A300TM太阳能电池的I-V曲线，曲线403针对的是如图1和图9中的在P型和N型掺杂区域之间具有沟槽的太阳能电池。虽然曲线402与曲线404所代表的理想I-V曲线很接近，但曲线403更接近。曲线405代表理想二极管I-V特性，其斜率为电流每增大10倍电压增大60毫伏。
现在参考图12，显示根据本发明实施例的电池的制作方法600的流程图。在方法600中，掺杂区域在多晶硅层中形成（步骤601）。例如，掺杂区域可以通过在未掺杂的多晶硅层上沉积掺杂二氧化硅层并执行扩散步骤、通过沉积预掺杂二氧化硅层、或者通过沉积未掺杂多晶硅层然后进行掺杂剂注入步骤来形成。可以对其中形成掺杂区域的多晶硅层进行蚀刻来形成沟槽，该沟槽将P型掺杂区域和N型掺杂区域分开（步骤602）。或者，沟槽在掺杂区域形成之前形成。沟槽可以包括带纹理的表面来增大太阳辐射的收集。钝化区域，比如钝化层或者衬底中的扩散区域，可以形成来将沟槽材料与衬底的主体隔离（步骤603）。然后氮化硅层形式的电介质可以在沟槽中沉积（步骤604）。之后，叉指型金属接触指可以形成，以穿过氮化硅电连接到P型和N型掺杂区域。
本发明公开了改进的太阳能电池制作工艺和结构。虽然提供了本发明的具体的实施例，但是应当理解的是这些实施例用于说明目的而不是限制目的。阅读本发明，对于所述领域中的不同技术人员来说，许多其他的实施例将是显而易见的。

Claims (20)

1.一种太阳能电池结构，包括：
硅衬底，其具有在正常工作期间面向太阳的正面和与正面相对的背面；
P型掺杂区域和N型掺杂区域，P型掺杂区域和N型掺杂区域包括多晶硅；
第一电介质层，其处于衬底上以及P型掺杂区域和N型掺杂区域中的每一个的下面；
沟槽，其将P型掺杂区域和N掺杂区域分开；以及
第二电介质层，其形成于沟槽中。
2.如权利要求1所述的太阳能电池结构，其中第一电介质层包括在硅衬底表面上形成厚度在5埃到40埃之间的二氧化硅。
3.如权利要求1所述的太阳能电池结构，其中沟槽具有用于吸收入射到太阳能电池背面上的太阳辐射的纹理化表面。
4.如权利要求1所述的太阳能电池结构，进一步包括：
第二电介质层和衬底之间的钝化层。
5.如权利要求1所述的太阳能电池结构，进一步包括：沟槽下的衬底中的扩散钝化区域，其中该扩散钝化区域掺杂有N型掺杂剂。
6.如权利要求1所述的太阳能电池结构，进一步包括：穿过第二电介质层与P型掺杂区域和N型掺杂区域电耦合的叉指型金属接触指。
7.一种制作太阳能电池的方法，该方法包括：
在太阳能电池衬底上形成第一电介质层；
在太阳能电池衬底的背面上形成P型掺杂区域和N型掺杂区域，P型掺杂区域和N型掺杂区域处于第一电介质层上，所述背面与太阳能电池的正面相对，太阳能电池的正面在正常工作期间面向太阳，衬底包含N型硅晶片；
形成将P型掺杂区域和N型掺杂区域分开的沟槽；和
在沟槽中沉积第二电介质层。
8.如权利要求7所述的方法，其中沟槽在形成P型掺杂区域和N型掺杂区域之前形成。
9.如权利要求7所述的方法，其中第二电介质层包含氮化硅。
10.如权利要求7所述的方法，进一步包括：
将第一金属接触指电耦合到衬底背面上的P型掺杂区域；以及
将第二金属接触指电耦合到衬底背面上的N型掺杂区域。
11.如权利要求7所述的方法，其中P型掺杂区域包括在沉积到第一电介质层上之前预先掺杂有P型掺杂剂的多晶硅，N型掺杂区域包括在第一电介质层上形成之前预先掺杂有N型掺杂剂的多晶硅。
12.如权利要求7所述的方法，其中形成P型掺杂区域的步骤包括：
从掺杂剂源将掺杂剂扩散到多晶硅层，该掺杂剂源是形成于多晶硅层上的材料层。
13.如权利要求12所述的方法，其中掺杂剂源包括P型掺杂的二氧化硅层。
14.如权利要求7所述的方法，进一步包括：
对沟槽表面进行随机纹理化。
15.一种太阳能电池结构，包括：
在硅衬底的背面上形成的P型掺杂区域和N型掺杂区域，P型掺杂区域和N型掺杂区域包括多晶硅，P型掺杂区域和N型掺杂区域中的每一个均形成在电介质层上；以及
沟槽结构，其将P型掺杂区域和N型掺杂区域分开。
16.如权利要求15所述的结构，其中硅衬底包括N型硅衬底。
17.如权利要求15所述的结构，其中沟槽表面被随机纹理化。
18.如权利要求15所述的结构，其中电介质层包括形成厚度为5埃到40埃之间的二氧化硅。
19.如权利要求15所述的结构，进一步包括在沟槽结构的表面上形成的钝化层。
20.如权利要求15所述的结构，进一步包括在沟槽结构下面的衬底中的钝化区域。
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