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CN103250236B - 接合材料及接合体以及接合方法 - Google Patents

接合材料及接合体以及接合方法 Download PDF

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Publication number
CN103250236B
CN103250236B CN201180056112.3A CN201180056112A CN103250236B CN 103250236 B CN103250236 B CN 103250236B CN 201180056112 A CN201180056112 A CN 201180056112A CN 103250236 B CN103250236 B CN 103250236B
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China
Prior art keywords
grafting material
grain
engaged
joint method
acid
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CN201180056112.3A
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CN103250236A (zh
Inventor
栗田哲
远藤圭
远藤圭一
齐藤悠
久枝穰
上山俊彦
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Dowa Electronics Materials Co Ltd
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Dowa Electronics Materials Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
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    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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    • B32—LAYERED PRODUCTS
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    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
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    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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    • G10L—SPEECH ANALYSIS TECHNIQUES OR SPEECH SYNTHESIS; SPEECH RECOGNITION; SPEECH OR VOICE PROCESSING TECHNIQUES; SPEECH OR AUDIO CODING OR DECODING
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    • G10L2019/0001—Codebooks
    • G10L2019/0002—Codebook adaptations
    • G—PHYSICS
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    • G10L19/00—Speech or audio signals analysis-synthesis techniques for redundancy reduction, e.g. in vocoders; Coding or decoding of speech or audio signals, using source filter models or psychoacoustic analysis
    • G10L2019/0001—Codebooks
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Abstract

本发明提供在以氮气为代表的非活性气氛下可形成接合体、并且即使不进行高温的热处理操作也能够体现可经得住实用的接合强度的接合材料。本发明提供下述接合材料：其包含被碳原子数8以下的脂肪酸包覆的平均一次粒径为1nm以上且200nm以下的银纳米颗粒、平均粒径为0.5μm以上且10μm以下的银颗粒、具有2个以上羧基的有机物质和分散介质。

Description

接合材料及接合体以及接合方法
技术领域
本发明涉及接合材料及使用它的接合体以及接合方法。
背景技术
汽车、工业设备所使用的电子部件中流经的电流趋于增大，随之该电子部件内部所使用的半导体的工作温度趋向于高温。因此，对于该电子部件来说期盼可经得住高温环境的接合材料。对应该期盼，以往一直使用即使在高温下也可维持强度的含铅焊料。但是，从最近抑制使用铅的趋势出发，寻求不使用含铅焊料的接合方法。
作为可对应该要求的候选接合材料、接合方法，考虑使用银焊料的方法，但在热处理操作时需要高温加热。另一方面，电子部件的精密化、微小化发展，期望将接合操作时的加热温度控制得较低。在该状况下，关注使用银纳米颗粒的接合材料、接合方法。
例如，提出将氧化银颗粒与肉豆蔻醇混合而制成接合材料的方法(非专利文献1、专利文献1)、向碳酸银或氧化银与银纳米颗粒的混合物中添加羧酸而制成接合材料的方法(专利文献2)等。
现有技术文献
专利文献
专利文献1：日本特开2009-267374号公报
专利文献2：日本特开2009-279649号公报
非专利文献
非专利文献1：守田等“使用微米尺寸的氧化银颗粒的适应高温环境的无铅接合技术的开发”Materia Japan第49卷第1号(2010)
发明内容
发明要解决的问题
如上述的专利文献中均记载的那样，使用现有技术的接合材料形成接合体时，该接合操作在含氧气氛的大气中进行。
本发明人等想到在大气中进行该接合操作时，接合体的界面处存在的源自接合材料的银有可能变为氧化银，对接合材料的接合力造成不良影响。其中，认为在具有微小结构的接合体中这种不良影响更加显著。
所以，考虑在以氮气为代表的非活性气氛下进行该接合操作。然而发现如下情况：使用现有技术的接合材料在以氮气为代表的非活性气氛下进行接合操作时，根据条件不同，有时得不到足够的强度。
此外还发现下述情况：使用现有技术的接合方法时，接合层中生成孔洞(以下有时也记载为孔隙)，不仅对接合体的接合强度有影响，还对接合体的可靠性有影响。
本发明是鉴于上述状况下而作出的，其要解决的问题是提供即使在以氮气为代表的非活性气氛下也可形成接合体、可抑制孔隙的产生的接合方法以及接合材料。
用于解决问题的方案
本发明人等为了解决上述问题而进行了深入研究，结果在接合操作中，通过下述接合方法得到体现经得住实用的强度同时也可抑制孔隙产生的效果，从而完成本发明，该接合方法如下：将接合材料涂布到第一被接合构件的接合面，在进行预焙烧之后在接合材料的层上配置第二被接合构件，然后进行主焙烧，在第一被接合构件与第二被接合构件之间形成接合层。
于是，该接合材料由至少银纳米颗粒、银颗粒、助熔剂和分散介质构成，若该银纳米颗粒使用被碳原子数8以下的脂肪酸包覆的银纳米颗粒、作为银颗粒使用平均粒径为0.5μm～10μm的银颗粒、作为助熔剂使用具有2个以上羧基的有机物质，则获得即使在以氮气为代表的非活性气氛下、500℃以下也可接合的划时代的效果，从而完成本发明。
即，本发明的第1技术方案为一种接合方法，其用于接合多个被接合构件，该接合方法具有：
向第一被接合构件的接合面涂布接合材料的工序；
将涂布有接合材料的第一被接合构件加热至规定的温度的预焙烧工序；
在加热过的第一被接合构件上所涂布的接合材料的层上设置第二被接合构件的工序；及
将设置有第二被接合构件的第一被接合构件加热至比上述预焙烧工序的温度高的温度，从而在第一被接合构件与第二被接合构件之间形成接合层的主焙烧工序。
第2技术方案为根据第1技术方案记载的接合方法，其中，上述接合材料含有具有2个以上羧基的有机物质。
第3技术方案为根据第1或第2技术方案记载的接合方法，其中，上述接合材料至少含有平均一次粒径为1nm以上且200nm以下的银纳米颗粒。
第4技术方案为根据第1～第3技术方案中任一项记载的接合方法，其中，在上述主焙烧工序中，对第一被接合构件与第二被接合构件的接合面进行20MPa以下的加压。
第5技术方案为一种接合材料，其包含被碳原子数8以下的脂肪酸包覆的平均一次粒径为1nm以上且200nm以下的银纳米颗粒、平均粒径为0.5μm以上且10μm以下的银颗粒、具有2个以上羧基的有机物质、及分散介质。
第6技术方案为根据第5技术方案记载的接合材料，其中，上述具有2个以上羧基的有机物质具有醚键。
第7技术方案为根据第5或第6技术方案记载的接合材料，其中，上述具有2个以上羧基的有机物质为氧二乙酸。
第8技术方案为根据第5～第7技术方案中任一项记载的接合材料，其中，上述银纳米颗粒被碳原子数3以上且6以下的脂肪酸包覆。
第9技术方案为一种接合方法，其用于接合多个被接合构件，该方法具有：
向第一被接合构件的接合面涂布第5～第8技术方案中任一项记载的接合材料的工序；
将涂布有上述接合材料的第一被接合构件加热至规定的温度的预焙烧工序；
在加热过的第一被接合构件上所涂布的上述接合材料的层上设置第二被接合构件的工序；及
将设置有第二被接合构件的第一被接合构件加热至比所述预焙烧工序的温度高的温度，从而在第一被接合构件与第二被接合构件之间形成接合层的主焙烧工序。
第10技术方案为根据第1～第4、第9技术方案中任一项记载的接合方法，其中，在非活性气体气氛下进行上述主焙烧工序。
第11技术方案为根据第1～第4、第9或第10技术方案中任一项记载的接合方法，其中，在150℃以上且500℃以下的温度下进行上述主焙烧工序。
第12技术方案为根据第1～第4、第9～第11技术方案中任一项记载的接合方法，其中，以升温速度为0.1℃/秒以上且2.0℃/秒以下进行上述主焙烧工序中的加热。
第13技术方案为一种接合体，其为多个被接合构件被接合层接合而成的接合体，该接合层中存在的孔隙率为2.0%以下。
发明的效果
通过使用本发明的接合材料，尤其是即使在以氮气为代表的非活性气氛下、在500℃以下也可形成体现实用的接合强度的接合体。此外，根据本发明的接合方法，由于抑制在所形成的接合层内部产生孔隙，因而可得到展现可靠性和高强度的接合体。
附图说明
图1为显示实施例及比较例的接合体的接合强度的图。
具体实施方式
首先，对构成本发明的接合材料的银纳米颗粒、银颗粒、助熔剂及分散介质进行详细地说明，接着，对接合材料(糊剂)的制造、接合体的形成进行说明。
＜银纳米颗粒＞
构成本发明的接合材料的银纳米颗粒是平均一次粒径为200nm以下、优选为1～150nm、更加优选为10～100nm的银纳米颗粒。使用具有该粒径的银纳米颗粒可形成具有很强接合力的接合体。
构成本发明的接合材料的银纳米颗粒的表面被保护剂即有机物质包覆。该有机物质优选为碳原子总数为8以下的脂肪酸。具体而言，可列举出饱和脂肪酸即辛酸(caprylic acid)、庚酸(enanthic acid)、己酸(caproic acid)、戊酸(valericacid)、丁酸(butyric acid)、丙酸(propionic acid)等。此外，作为二羧酸可列举出草酸、丙二酸、甲基丙二酸、乙基丙二酸、丁二酸、甲基丁二酸、乙基丁二酸、苯基丁二酸、戊二酸、己二酸、庚二酸、辛二酸等。不饱和脂肪酸可列举出山梨酸、马来酸等。
其中，从生产率、操作性的观点出发，优选为己酸、庚酸、己二酸、山梨酸、丙二酸，用该脂肪酸包覆银纳米颗粒表面可得到适度聚集的粉末形态的银纳米颗粒。
表面被该脂肪酸包覆的银纳米颗粒保持作为银纳米颗粒的一次颗粒的形态、且呈现成为聚集块而易于回收的形态。该聚集块的粒径为至少2.5μm以上。这可从该聚集块可用No5C滤纸(JIS P-3801)回收来确认。也就是说，用上述滤纸过滤该聚集块(二次聚集)时，由于滤液澄清，因而认为聚集块具有该滤纸的网眼以上的粒径。进而，通过对该回收物施加低温(低于100℃)干燥操作，可得到由银纳米颗粒的聚集块形成的干燥粉末。
由于将具有粉末形态的银纳米颗粒作为银纳米颗粒，制造本发明的接合材料过程中，配混时的操作性大幅提高。进而，可使用被多种有机物质包覆的银纳米颗粒，或者也可组合使用具有不同的平均一次粒径的银纳米颗粒。制造接合材料时，该银纳米颗粒的添加量相对于糊剂总质量可为10～80质量%，优选设为15～75质量%。
其中，具有该粒径的银纳米颗粒可通过例如日本专利第4344001号中记载的方法来制造。对于该制造方法以调液工序、升温工序、反应工序、熟化工序、过滤和清洗工序及干燥工序的顺序进行简单地说明。
《调液工序》
准备溶解有具有还原性的物质的还原液和溶解有原料即金属盐(特别是银盐)的原料液。
还原液通过将还原剂、保护剂、及稳定剂即氨水均匀混合而成。其中，还原剂只要为可将金属还原的还原剂即可。例如，可以组合使用水合肼、以及肼、硼氢化碱盐(NaBH4等)、氢化锂铝(LiAlH4)、抗坏血酸、伯胺、仲胺、叔胺等。
保护剂是如上述那样附着在银颗粒的表面、阻碍颗粒之间结合的有机物质，可得到稳定的微小银颗粒。该有机物质优选为碳原子总数为8以下的脂肪酸，其中优选使用己酸、山梨酸。
稳定剂可使用氨水，其用于使酸在水中溶解。
溶剂优选为极性溶剂，可使用水或具有极性基团的有机溶剂。具体而言，可例示水、乙醇、多元醇、乙二醇醚、1-甲基吡咯烷酮、吡啶、萜品醇、丁基卡必醇、丁基卡必醇醋酸酯、三甲基戊二醇单异丁酸酯(texanol)、苯氧基丙醇等。
由以上可知，还原液的具体例子为水、水合肼水溶液、己酸和氨水的混合物，原料液的具体例子为硝酸银水溶液。
《升温工序》
将还原液和原料液升温，使它们升温至反应温度。此时，若将还原液与原料液同样地加热，则具有防止反应时反应不均匀的效果，可保持颗粒的均匀性，因而优选。此时所升温的温度为40～80℃的范围。
《反应工序》
将还原液和原料液升温至目标温度之后，将原料液添加到还原液中。添加优选在小心爆沸的基础上一次性地添加。
《熟化工序》
将还原液与原料液混合之后，持续搅拌10～30分钟左右，完成颗粒的生长。
《过滤和清洗工序》
所得到的浆料通过过滤法而进行固液分离。清洗工序如下进行：对由该过滤工序得到的滤饼加纯水，再次过滤该纯水。根据本发明的制造法，由于纳米级的一次微粒缓慢地形成聚集体并在反应液中自然沉降，因此可以容易地回收。
《干燥工序》
通过对所得到的金属(银)块实施60～90℃、6～24小时的干燥工序，从而可得到干燥的金属(银)颗粒块。
《银纳米颗粒的测定和评价》
银纳米颗粒的粒径根据透射电子显微镜(TEM)照片而算出。
具体而言，将2质量份金属纳米颗粒添加到96质量份环己烷与2质量份油酸的混合溶液中，用超声波使其分散而得到分散溶液。通过将所得到的分散溶液滴加到带支撑膜的Cu微栅网（microgrid）上，使其干燥，从而制成TEM试样。对于制成的TEM试样即微栅网，用透射电子显微镜(日本电子株式会社制造的JEM-100CX Mark-II型)在100kV的加速电压下、以倍率300000倍拍摄在明视场下观察到的颗粒的图像即可。
由所得到的银纳米颗粒的TEM照片图像，可直接用游尺等测定粒径，也可用图像软件算出。总之，银纳米颗粒的平均一次粒径通过对TEM照片中至少200个各自独立的颗粒进行测定，算出它们的算术平均而求出。
＜银颗粒＞
构成本发明的接合材料的银颗粒是平均粒径的范围为0.5～10μm，优选为0.5～9.0μm，更加优选为0.5～8.0μm的范围的银颗粒。对银颗粒的形态没有特别地限制。作为银颗粒的形态，可使用球状、片(鳞片)状、长方体状、立方体状、聚集体状的各种形态。
通过组合使用上述银纳米颗粒和该亚微米级的银颗粒，有助于提高接合材料的接合强度，从而可得到接合力高的接合体。制造接合材料时，该银颗粒的添加量相对于糊剂总质量为10～80质量%，优选设为15～75质量%。
测定该银颗粒的平均一次粒径只要使用激光衍射法即可。例如，将0.3g银颗粒的试样投入到50mL异丙醇中，用输出功率50W的超声波清洗机使其分散5分钟。对该分散液用Microtrac粒径分布测定装置(霍尼韦尔-日机装制造的9320-X100)以激光衍射法测定D50(累积50质量%粒径)的值，将该值作为平均一次粒径即可。
＜助熔剂＞
本发明的接合材料的特征在于添加由有机物形成的助熔剂成分(烧结促进成分)。其中，助熔剂成分具体而言是指具有2个以上羧基的有机物质。更优选为还具有醚键的二羧酸。通过向接合材料添加具有该结构的助熔剂成分，即使进行以氮气为代表的非活性气氛下的500℃以下的热处理操作，也可使上述被有机物质包覆的银纳米颗粒变化为块态的银。
上述的热处理操作时，优选该助熔剂成分分解为二氧化碳、水等简单的构成。因此，优选的是，该助熔剂成分是仅由碳、氢、氧这些元素构成的有机物质，其分解温度为热处理操作的设定温度以下。具体而言为500℃以下，更优选为300℃以下。
从该观点出发，该助熔剂成分的分子量为1000以下，优选为500以下，更加优选为300以下。此外，结构中的碳原子总数最多为15以下，优选为10以下。若为具有这种程度的分子量及碳原子数的结构，则即使设定为比较低的接合温度也可使其分解或挥发。
作为该助熔剂成分即具有2个以上羧基的有机物质的优选例子，可列举出具有二羧酸结构的有机物质的甘醇酸，以及具有醚键的二羧酸的氧二乙酸(二甘醇酸)。此时，助熔剂成分的添加量相对于糊剂总质量为0.01～1.0%，优选为0.02～0.7%，更加优选为0.05～0.5%。
＜分散介质＞
从使银纳米颗粒分散的观点出发，构成本发明的接合材料的分散介质优选使用蒸气压低的极性溶剂。需要说明的是，此时分散介质不一定必须由一种物质构成，也可混合组合使用。
作为具体例子，可列举出水、乙醇、多元醇、乙二醇醚、1-甲基吡咯烷酮、吡啶、辛二醇、萜品醇、丁基卡必醇、丁基卡必醇醋酸酯、三甲基戊二醇单异丁酸酯、苯氧基丙醇、二乙二醇单丁醚、二乙二醇单丁醚醋酸酯、γ―丁内酯、乙二醇单甲醚醋酸酯、乙二醇单乙醚醋酸酯、甲氧基丁基醋酸酯、甲氧基丙基醋酸酯、二乙二醇单乙醚醋酸酯、乳酸乙酯、1-辛醇等。考虑印刷性等，整个糊剂中的该溶剂的添加量(混合2种以上时自然为总量)相对于糊剂总质量为1～25%，优选为3～20%，更加优选为5～15%。
＜其它的添加剂＞
向上述的分散介质添加用于降低银纳米颗粒的烧结温度、促进密合的添加剂和粘度调节剂也是优选的技术方案。
作为粘度调节剂的例子有烃溶剂、各种脂肪酸、水溶性树脂、水性分散树脂及无机粘结剂。具体而言，可添加环烷烃系烃溶剂、油酸、丙烯酸（酯）树脂、马来酸树脂、富马酸树脂、苯乙烯-马来酸共聚树脂的高酸值树脂、聚酯树脂、聚烯烃树脂、苯氧树脂、聚酰亚胺树脂、聚酰胺树脂或者醋酸乙烯酯系乳液、丙烯酸（酯）乳液、合成橡胶乳胶、环氧树脂、酚醛树脂、DAP树脂、聚氨酯树脂、氟树脂、硅树脂、乙基纤维素及聚乙烯醇等。作为无机粘结剂的例子，可列举出硅溶胶、氧化铝溶胶、氧化锆溶胶、二氧化钛溶胶这样的无机粘结剂。
通过添加该粘度调节剂，在将糊剂印刷到基板时，期待转印性的改善、模糊等的抑制等所谓印刷性的改善效果。
其中，从改善烧结性的观点出发，这样的粘度调节剂的添加量优选较少。所以，该粘度调节剂的添加剂总量有时也兼顾其它成分，设为相对于糊剂的总质量为0.2～2.0质量%，优选设为0.3～1.5质量%，更加优选设为0.3～1.0质量%。
＜接合材料(糊剂)的制造＞
对本发明的接合材料的制造方法进行说明。将该混合物导入到混炼脱泡机进行混炼形成混炼物。然后，对该混炼物进行机械分散处理，得到本发明的接合材料。
该机械分散处理只要不伴随银纳米颗粒及银颗粒的显著改性，就可采用公知的任意的方法。具体而言，可例示超声波分散、分散机、三辊磨、球磨机、珠磨机、双螺杆捏合机、自公转式搅拌机等，可将它们单独使用或者多种组合使用。
上述银纳米颗粒的金属化温度存在根据包覆其表面的有机物质、分散介质或添加物的种类而大幅变化的情况。所以，优选的是，对于所制造的接合材料，预先通过TG（热重分析）测定等而掌握热性质。
＜接合体的形成＞
接合体的形成：通过例如金属掩模、分配器或丝网印刷法对用来形成接合部的第一被接合构件的基板表面涂布20μm～200μm左右厚的接合材料。涂布后，经过低温的热处理(以下称为预焙烧)之后，贴附第二被接合构件即被接合物，通过高温的热处理工序(以下称为主焙烧)将接合材料金属化。
本发明的接合材料即使进行以氮气为代表的非活性气氛下的500℃以下的主焙烧也可金属化，而且即便与以往的制造法同样地在大气中进行主焙烧的情况下也可金属化。
其中，基板表面涂布的接合材料中存在气泡或包含气体时，成为所形成的接合层中产生孔隙的原因。所以，优选的是，为了去除该接合材料中的气泡、气体，在比接合材料中使用的银纳米颗粒的分解温度、分散介质的沸点更低温的条件下，对基板表面涂布的接合材料进行作为预焙烧的热处理而去除气泡、气体。通过实施该预焙烧，可抑制形成接合体时的接合层中的孔隙生成，进而可提高接合层的接合强度，因而优选。
一般而言，预焙烧温度在50～150℃的范围内并且优选设为比主焙烧时的温度低50～350℃的温度。此外，预焙烧时间依赖于其接合对象面积，只要大约10分钟左右即足够，有时即使加热30秒左右也无妨。
以上说明的预焙烧不仅适用本发明的接合材料，也适用于现有技术的接合材料的情况，可抑制接合层中的孔隙的生成。
预焙烧之后，将被接合物配设到接合材料的涂布层上部。而后，为了形成接合体，边将被接合物压向基板边升温。此时的加压压力可根据该用来接合的材料而适当设定。其中，考虑到对所接合的被接合物、基板的影响时，优选的是，设为20MPa以下，优选设为15MPa以下。
主焙烧中的接合层形成时的温度优选在150℃以上且500℃以下的低温下进行。该主焙烧温度也可根据所接合的接合物、基板的种类而适当设定。并且，主焙烧的升温速度为0.1～2.0℃/秒、优选为0.2～1.5℃/秒。通过设为该升温速度，从而可形成致密的接合层、可得到稳定的接合体。
进而，若将该主焙烧温度保持60分钟～30分钟推进接合层中的银颗粒的金属化，则可得到更牢固的接合层。
实施例
以下边参照实施例边更具体地说明本发明。
［实施例1］
＜银纳米颗粒的合成＞
使用500mL烧杯，使13.4g硝酸银(东洋化学株式会社制造)溶解于72.1g纯水中制备原料液。
另一方面，将1.4L的纯水投入到5L烧杯中，向其中通入30分钟氮气去除溶解氧的同时升温至40℃。然后，向该纯水中添加17.9g作为保护剂的山梨酸(和光纯药工业株式会社制造)，接着添加2.8g作为稳定剂的28%氨水(和光纯药工业株式会社制造)。
以下的实施例和比较例均以该氨水添加的时间点作为反应开始时间。
继续该添加了氨的溶液的搅拌，在反应开始经过5分钟之后添加6.0g作为还原剂的含水肼(纯度80%：Otsuka Chemical Co.,Ltd.制造)制备还原液。在反应开始经过10分钟之后，将液温调整至40℃的原料液一次性地添加到还原液中而使它们反应、结束搅拌。
搅拌终止后，进行30分钟熟化从而形成被山梨酸包覆的银纳米颗粒聚集体。然后，将形成有银纳米颗粒聚集体的液体用No5C的滤纸过滤，用纯水清洗回收物，得到银纳米颗粒聚集体。使该银纳米颗粒聚集体在真空干燥机中在80℃、12小时的条件下干燥，得到银纳米颗粒聚集体的干燥粉末。
〈接合材料的制备〉
将作为银纳米颗粒粉末的所得被山梨酸包覆的银纳米颗粒聚集体干燥粉末(平均一次粒径：100nm)45.0g(所有银中的比例为50.00质量%)、球状银颗粒的粉末(同和电子科技有限公司制造的2-1C球状银粉末：平均一次粒径(D50)1.0μm)45.0g(所有银中的比例为50.00质量%)、作为助熔剂的氧二乙酸(和光纯药株式会社制造：二甘醇酸)0.05g和作为分散介质的辛二醇(KHNeochem Co.,Ltd.制造：2-乙基-1,3-己二醇)9.95g混合，制成混合物。
将该混合物用混炼脱泡机(EME公司制造的V-mini300型)混炼30秒(混炼条件为，公转：1400rpm；自转：700rpm)之后，使其通过三辊磨(EXAKTApparatebaus公司制造的22851Norderstedt型)五次，得到实施例1的接合材料(糊剂)。在表1、2中示出实施例1的接合材料的配混。
需要说明的是，辛二醇的沸点为244℃、闪点为135℃。
〈接合构件的形成〉
准备金属掩模(掩模厚50μmt)，以用金属刮刀手印刷的方式，通过印刷法在镀银的铜基板上涂布实施例1的接合材料(糊剂)。图案制为□5.5mm、50μm厚。
通过将这样得到的涂布有接合材料的铜基板设置在炉(倒装片接合机（flip chip bonder）M-90DON-400HiSOL,Inc.制造)中，在氮气气氛(氧浓度：500ppm以下)中、100℃加热10分钟进行预焙烧，从而去除接合材料中的气泡、气体成分。
该预焙烧之后，将涂布有接合材料的铜基板冷却至25℃，对着上述涂布面固定芯片(□5mm、厚度0.3mm的镀银的Si芯片)。
将该固定有芯片的铜基板再次设置在炉中，实施10MPa的加压，以升温速度1℃/秒升温至250℃、从达到250℃开始保持5分钟作为主焙烧，得到实施例1的接合体。
进行所得到的实施例1的接合体的接合力的测定。具体而言，以JISZ-03918-5：2003的“无铅焊料试验方法第5部焊料接头的拉伸及剪切试验方法”中记载的方法为基准进行。即下述方法：沿水平方向推基板上接合的被接合体(芯片)，测定接合面经不住推力而破裂时的力。本实施例中使用DageJapan Co.Ltd.制造的接合力试验仪(4000系列)进行试验。剪切高度为50μm、试验速度为5mm/分钟，测定在室温下进行。
其结果，实施例1的接合体的基板与芯片之间的接合强度(平均剪切强度)为64.0MPa。需要说明的是，剪切试验方法为直接测定接合面破裂时的力(N)，接合强度是依赖于接合面积的值。所以，为了将测定的剪切强度标准化，将测定的破裂时的力除以接合面积(这次的情况为5.0mm×5.0mm＝25.0mm2)得到的值(单位为MPa)定义为接合强度(平均剪切强度)。以下的实施例、比较例中也一样。
进而，通过X射线测定(X射线透视装置SMX-160LT岛津制作所制造)测定实施例1的接合体内部的孔隙的存在率。具体而言，使用图像分析软件，调整亮度范围(颜色范围)使孔隙部分着红色，通过将□5mm的面积二值化，从而计算孔隙的面积比率。在表1、2中示出该结果。
［实施例2］
将实施例1的接合材料的分散介质即辛二醇的添加量变更为7.95g，此外以粘度调整为目的添加2.0g EXXSOL D130FLUID(Exxon Mobil Corporation制造)，除此以外，经过与实施例1同样的制造工序，制造实施例2的接合材料。并且，经过与实施例1同样的工序，形成实施例2的接合体，进行与实施例1同样的评价。在表1、2中示出评价结果。
［实施例3］
将实施例1的接合材料的银粉从球状银颗粒变更为片状银颗粒粉末(同和电子科技有限公司制造的FA-D-6：平均一次粒径(D50)8.3μm),除此以外，经过与实施例1同样的制造工序，制造实施例3的接合材料。并且，经过与实施例1同样的工序，形成实施例3的接合体，进行与实施例1同样的评价。在表1、2中示出评价结果。
［实施例4］
将实施例1的接合材料的被山梨酸包覆的银纳米颗粒聚集体干燥粉末(平均一次粒径：100nm)变更为被山梨酸包覆的银纳米颗粒聚集体干燥粉末(平均一次粒径：60nm)，将作为助熔剂的氧二乙酸(和光纯药株式会社制造：二甘醇酸)变更为0.1g、将作为分散介质的辛二醇(KH Neochem Co.,Ltd.制造：2-乙基-1,3-己二醇)的添加量变更为9.9g，除此以外，经过与实施例1同样的制造工序，制造实施例4的接合材料。并且，经过与实施例1同样的工序，形成实施例4的接合体，进行与实施例1同样的评价。在表1、2中示出评价结果。
［实施例5］
将实施例1的接合材料的分散介质即辛二醇的添加量变更为7.45g，此外以粘度调整为目的添加2.0g EXXSOL D130FLUID(Exxon Mobil Corporation制造)，且以粘度调整为目的添加0.5g油酸(KISHIDA CHEMICAL Co.,Ltd.制造)，除此以外，经过与实施例1同样的制造工序，制造实施例5的接合材料。并且，经过与实施例1同样的工序，形成实施例5的接合体，进行与实施例1同样的评价。在表1、2中示出评价结果。
［比较例1］
准备实施例1的接合材料。
然后，不实施芯片固定前的预焙烧，在涂布有接合材料的铜基板上固定芯片，实施10MPa的加压，在100℃下加热10分钟作为预干燥，然后以升温速度1℃/秒升温至250℃，从达到250℃开始保持5分钟作为主焙烧，由此形成比较例1的接合体，进行与实施例1同样的评价。在表1、2中示出评价结果。
［比较例2］
使用实施例2的接合材料，经过与比较例1同样的工序，形成比较例2的接合体，进行与实施例1同样的评价。在表1、2中示出评价结果。
［比较例3］
使用实施例3的接合材料，经过与比较例1同样的工序，形成比较例3的接合体，进行与实施例1同样的评价。在表1、2中示出评价结果。
[表1]
[表2]
［总结］
在图1中示出实施例1～3及比较例1～3的接合体的接合强度。图1是纵轴为接合强度(剪切强度)、横轴为实施例1-比较例1、实施例2-比较例2、实施例3-比较例3的柱形图。
实施例1-比较例1、实施例2-比较例2和实施例3-比较例3使用相同组成的糊剂作为接合材料，在实施例1～3中实施芯片固定前的预焙烧，在比较例1～3中未实施芯片固定前的预焙烧。
由图1明确，实施了芯片固定前的预焙烧的实施例1～3的接合体体现出未实施预焙烧的比较例1～3的接合体的2.3～6.2的接合强度。
产业上的可利用性
本发明的接合材料及接合体、以及接合方法可应用于非绝缘型半导体装置、裸芯片安装装配技术，适用于功率器件(IGBT、整流二极管、功率晶体管、功率MOSFET、绝缘栅双极晶体管、晶闸管、门极可关断晶闸管、三端双向可控硅（TRIAC）。此外，还可适用于表面经过铬处理的玻璃上的接合材，还可适用于使用LED的照明装置的电极、框架的接合材。

Claims (7)

1.一种接合方法，其用于接合多个被接合构件，该接合方法具有：
向第一被接合构件的接合面涂布接合材料的工序；
将涂布有接合材料的第一被接合构件于50～150℃加热30秒～10分钟的预焙烧工序；
在加热过的第一被接合构件上所涂布的接合材料的层上设置第二被接合构件的工序；及
边对设置有第二被接合构件的第一被接合构件进行20MPa以下的加压边加热至比所述预焙烧工序的温度高的温度，从而在第一被接合构件与第二被接合构件之间形成接合层的主焙烧工序；
所述接合材料包含被碳原子数8以下的脂肪酸包覆的平均一次粒径为1nm以上且200nm以下的银纳米颗粒、平均粒径为0.5μm以上且10μm以下的银颗粒、具有2个以上羧基的有机物质、及分散介质。
2.根据权利要求1所述的接合方法，其中，所述具有2个以上羧基的有机物质具有醚键。
3.根据权利要求1或2所述的接合方法，其中，所述具有2个以上羧基的有机物质为氧二乙酸。
4.根据权利要求1或2所述的接合方法，其中，所述银纳米颗粒被碳原子数3以上且6以下的脂肪酸包覆。
5.根据权利要求1或2所述的接合方法，其中，在非活性气体气氛下进行所述主焙烧工序。
6.根据权利要求1或2所述的接合方法，其中，在150℃以上且500℃以下的温度下进行所述主焙烧工序。
7.根据权利要求1或2所述的接合方法，其中，以升温速度为0.1℃/秒以上且2.0℃/秒以下进行所述主焙烧工序中的加热。
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Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011007402A1 (ja) * 2009-07-14 2011-01-20 Ｄｏｗａエレクトロニクス株式会社 金属ナノ粒子を用いた接合材および接合方法
KR101725181B1 (ko) * 2011-06-10 2017-04-10 도와 일렉트로닉스 가부시키가이샤 접합재 및 이것을 이용하여 작성된 접합체
JP5887086B2 (ja) * 2011-08-11 2016-03-16 株式会社タムラ製作所 導電性材料
US10000670B2 (en) * 2012-07-30 2018-06-19 Henkel IP & Holding GmbH Silver sintering compositions with fluxing or reducing agents for metal adhesion
JP6121804B2 (ja) * 2013-06-04 2017-04-26 Ｄｏｗａエレクトロニクス株式会社 接合材およびその接合材を用いて電子部品を接合する方法
JP6118192B2 (ja) 2013-06-21 2017-04-19 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
CN106415822B (zh) * 2014-05-27 2021-04-06 电化株式会社 半导体封装体及其制造方法
JP6373066B2 (ja) * 2014-05-30 2018-08-15 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
CN104014947A (zh) * 2014-06-25 2014-09-03 北京理工大学 一种纳米Ag3Sn颗粒增强的复合无铅焊锡膏及制备方法
KR102226649B1 (ko) * 2014-12-26 2021-03-10 헨켈 아게 운트 코. 카게아아 소결가능한 접착 재료 및 그것을 사용한 반도체 디바이스
JP6624445B2 (ja) * 2015-03-27 2019-12-25 国立大学法人大阪大学 半導体装置
US20180065324A1 (en) * 2015-05-15 2018-03-08 Konica Minolta, Inc. Powder material, method for producing three-dimensional molded article, and three-dimensional molding device
JP6796937B2 (ja) * 2016-03-16 2020-12-09 日東電工株式会社 接合体の製造方法
JP6706818B2 (ja) * 2016-06-30 2020-06-10 国立大学法人大阪大学 半導体装置
EP3296054B1 (de) * 2016-09-19 2020-12-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur herstellung eines mikrobearbeiteten werkstücks mittels laserabtrag
JP7007140B2 (ja) * 2016-09-30 2022-01-24 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
MY193333A (en) * 2016-09-30 2022-10-05 Dowa Electronics Materials Co Ltd Bonding material and bonding method using same
JP2018109232A (ja) * 2016-12-28 2018-07-12 Ｄｏｗａエレクトロニクス株式会社 接合材及びそれを用いた接合方法
TWI655693B (zh) 2017-02-28 2019-04-01 日商京瓷股份有限公司 半導體裝置之製造方法
CN107123459B (zh) * 2017-03-09 2019-04-19 苏州工业园区英纳电子材料有限公司 导电银浆
JP2018165387A (ja) * 2017-03-28 2018-10-25 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合体
US10730150B2 (en) * 2017-08-07 2020-08-04 Honeywell International Inc. Flowable brazing compositions and methods of brazing metal articles together using the same
JP6677231B2 (ja) * 2017-09-22 2020-04-08 日亜化学工業株式会社 電子部品の接合方法および接合体の製造方法
EP3687716A1 (en) * 2017-09-25 2020-08-05 Eastman Kodak Company Method of making silver-containing dispersions with nitrogenous bases
JP6958434B2 (ja) * 2018-03-06 2021-11-02 三菱マテリアル株式会社 金属粒子凝集体及びその製造方法並びにペースト状金属粒子凝集体組成物及びこれを用いた接合体の製造方法
JP7155654B2 (ja) * 2018-06-22 2022-10-19 三菱マテリアル株式会社 接合体の製造方法
JP6869274B2 (ja) * 2019-01-11 2021-05-12 Ｊｘ金属株式会社 導電性塗布材料
JP6869275B2 (ja) * 2019-01-11 2021-05-12 Ｊｘ金属株式会社 導電性塗布材料
US11515281B2 (en) 2019-04-22 2022-11-29 Panasonic Holdings Corporation Bonded structure and bonding material
JP7443948B2 (ja) * 2020-06-15 2024-03-06 Jsr株式会社 組成物、銀焼結物の形成方法、接合方法、物品及び物品の製造方法
CN117334655B (zh) * 2023-09-30 2024-05-31 江苏富乐华功率半导体研究院有限公司 一种应用银烧结焊片的低孔隙率界面结构及制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101875158A (zh) * 2009-04-28 2010-11-03 日立化成工业株式会社 导电性接合材料、采用它的接合方法、以及由其接合的半导体装置

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841197A (en) * 1994-11-18 1998-11-24 Adamic, Jr.; Fred W. Inverted dielectric isolation process
JPH08164494A (ja) * 1994-12-10 1996-06-25 Kokusai Electric Co Ltd ろうペースト及びこれを用いた溶接方法
JPH10162647A (ja) * 1996-11-28 1998-06-19 Asahi Chem Ind Co Ltd 導電性ペースト
JP3435006B2 (ja) * 1997-02-27 2003-08-11 京セラ株式会社 半導体素子収納用パッケージの製造方法
JP2001105180A (ja) * 1999-10-05 2001-04-17 Showa Denko Kk はんだ付けフラックス
US20020046627A1 (en) * 1998-06-10 2002-04-25 Hitoshi Amita Solder powder, flux, solder paste, soldering method, soldered circuit board, and soldered joint product
JP4223648B2 (ja) * 1999-12-02 2009-02-12 昭和電工株式会社 はんだ付けフラックス
KR100411229B1 (ko) * 1998-06-10 2003-12-18 쇼와 덴코 가부시키가이샤 땜납 분말, 플럭스, 땜납 페이스트, 납땜 방법, 납땜된회로기판, 및 납땜된 접합물
JP3316464B2 (ja) * 1998-12-28 2002-08-19 株式会社中村自工 ブレージングペースト
JP2001085828A (ja) * 1999-09-13 2001-03-30 Suzuka Fuji Xerox Co Ltd 部分はんだ付けプロセスおよびシステム
US6645632B2 (en) * 2000-03-15 2003-11-11 Shin-Etsu Chemical Co., Ltd. Film-type adhesive for electronic components, and electronic components bonded therewith
JP4748292B2 (ja) * 2000-03-15 2011-08-17 信越化学工業株式会社 フィルム状電子部品用接着剤及び電子部品
JP2002001520A (ja) * 2000-06-16 2002-01-08 Uchihashi Estec Co Ltd はんだ付け方法及びはんだ付け構造
JP3942816B2 (ja) * 2000-10-25 2007-07-11 ハリマ化成株式会社 金属間のロウ付け接合方法
JP3764349B2 (ja) 2001-05-07 2006-04-05 ハリマ化成株式会社 金属微粒子分散液を用いたメッキ代替導電性金属皮膜の形成方法
JP2004082667A (ja) * 2002-08-29 2004-03-18 Yoshizawa Kk 複合鉛板及びその製造方法
JP2004107728A (ja) * 2002-09-18 2004-04-08 Ebara Corp 接合材料及び接合方法
US7843045B2 (en) * 2005-07-20 2010-11-30 Hitachi Chemical Co., Ltd. Thermoplastic resin composition for semiconductor, adhesion film, lead frame, and semiconductor device using the same, and method of producing semiconductor device
US20070090170A1 (en) * 2005-10-20 2007-04-26 Endicott Interconnect Technologies, Inc. Method of making a circuitized substrate having a plurality of solder connection sites thereon
JP2007227493A (ja) * 2006-02-22 2007-09-06 Mitsubishi Materials Corp 金錫合金ハンダペーストを用いたハンダ付け方法
JP4638382B2 (ja) * 2006-06-05 2011-02-23 田中貴金属工業株式会社 接合方法
JP4963393B2 (ja) * 2006-10-03 2012-06-27 三ツ星ベルト株式会社 低温焼成型銀ペースト
JP4872663B2 (ja) * 2006-12-28 2012-02-08 株式会社日立製作所 接合用材料及び接合方法
JP5238215B2 (ja) * 2007-10-19 2013-07-17 三菱製紙株式会社 導電性発現方法および導電性部材
KR101239563B1 (ko) 2007-10-24 2013-03-05 도와 일렉트로닉스 가부시키가이샤 미소 은 입자 함유 조성물 및 미소 은 입자를 갖는 페이스트
WO2009069273A1 (ja) * 2007-11-28 2009-06-04 Panasonic Corporation 導電性ペーストおよびこれを用いた電気電子機器
WO2009116136A1 (ja) * 2008-03-18 2009-09-24 株式会社応用ナノ粒子研究所 複合銀ナノペースト、その製法及びナノペースト接合方法
JP4936192B2 (ja) * 2008-03-31 2012-05-23 パナソニック株式会社 熱硬化性樹脂組成物及びその製造方法
US8513534B2 (en) 2008-03-31 2013-08-20 Hitachi, Ltd. Semiconductor device and bonding material
JP5399110B2 (ja) 2008-04-23 2014-01-29 トヨタ自動車株式会社 接合材料及び接合材料の成分算出方法
JP5033047B2 (ja) * 2008-04-24 2012-09-26 パナソニック株式会社 熱硬化性樹脂組成物及びその製造方法
US20110180764A1 (en) * 2008-06-26 2011-07-28 Dic Corporation Silver-containing powder, method for producing the same, conductive paste using the same, and plastic substrate
JP2010053377A (ja) 2008-08-26 2010-03-11 Nippon Handa Kk 金属製部材の接合方法および金属製部材接合体の製造方法
JP5475976B2 (ja) * 2008-09-25 2014-04-16 パナソニック株式会社 熱硬化性樹脂組成物及びその製造方法並びに回路基板
JP4893720B2 (ja) * 2008-09-25 2012-03-07 パナソニック電工株式会社 熱硬化性樹脂組成物及びその製造方法
JP5464463B2 (ja) * 2008-09-25 2014-04-09 パナソニック株式会社 熱硬化性樹脂組成物及び回路基板
JP5430922B2 (ja) * 2008-12-24 2014-03-05 三ツ星ベルト株式会社 導電性基材の製造方法
JP5268717B2 (ja) * 2009-03-10 2013-08-21 日本発條株式会社 大気接合用ろう材及び接合体
WO2011007402A1 (ja) * 2009-07-14 2011-01-20 Ｄｏｗａエレクトロニクス株式会社 金属ナノ粒子を用いた接合材および接合方法
JP5620122B2 (ja) * 2010-02-24 2014-11-05 地方独立行政法人 大阪市立工業研究所 接合用材料及び接合方法
JP4928639B2 (ja) * 2010-03-15 2012-05-09 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
CN102802846B (zh) * 2010-03-15 2017-05-24 同和电子科技有限公司 接合材料及使用其的接合方法
JP2011243721A (ja) * 2010-05-18 2011-12-01 Dainippon Printing Co Ltd 太陽電池用集電電極、太陽電池及びその製造方法
WO2011155055A1 (ja) * 2010-06-11 2011-12-15 Ｄｏｗａエレクトロニクス株式会社 低温焼結性接合材および該接合材を用いた接合方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101875158A (zh) * 2009-04-28 2010-11-03 日立化成工业株式会社 导电性接合材料、采用它的接合方法、以及由其接合的半导体装置

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