CN103138709A - Radio-frequency filter and radio-frequency multiplexer - Google Patents
Radio-frequency filter and radio-frequency multiplexer Download PDFInfo
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- CN103138709A CN103138709A CN2013100197053A CN201310019705A CN103138709A CN 103138709 A CN103138709 A CN 103138709A CN 2013100197053 A CN2013100197053 A CN 2013100197053A CN 201310019705 A CN201310019705 A CN 201310019705A CN 103138709 A CN103138709 A CN 103138709A
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Abstract
The invention discloses a radio-frequency frequency filter and a radio-frequency multiplexer. The radio-frequency filter comprises a sound wave rejector chip used for filtering received signal, passive device miscellaneous function network connected with the sound wave rejector chip, the pass device miscellaneous function is used for improving the quality of the filter or achieving a transferring function of port impedance. The passive device miscellaneous function is made through a passive device insertion phase delay (IPD). The passive device miscellaneous function is made through the passive device technique, the radio-frequency filter is composed by different combination ways between the passive device miscellaneous function network and the sound wave rejector chip so as to improve the integration level of the device, reduce occupied area, reduce the volume of a product and avoid the installation of the passive device on a packaging basement of a load-bearing substrate, and therefore, complicated multilayer design of the substrate can be avoided so that complexity and cost of the design and manufacture of the substrate can be lowered.
Description
Technical field
The present invention relates to the electron device package field, and especially, relate to a kind of radio-frequency filter and radio frequency multiplexer.
Background technology
Along with the fast development of wireless telecommunication system, the module of a large amount of Various Functions is designed and is installed in the strict limited handheld mobile device of volume.Meanwhile, it is more and more narrow that day by day crowded frequency resource makes the protection interval between different communication bands.Under this development trend, for each module in the assurance system can work, be independent of each other, will propose higher requirement to each part of communication equipment, for example, radio-frequency front-end must be towards microminiaturized, integrated, high-performance, low-power consumption and future development cheaply.In general, radio-frequency filter module and radio frequency multiplexer module are the important component parts of radio-frequency front-end.Therefore, reduce the size of radio-frequency filter module and radio frequency multiplexer module, and reduce its cost, significant to further developing of radio-frequency front-end.
Radio-frequency filter module in handheld wireless communications devices and radio frequency multiplexer module adopt some passive devices to consist of the auxiliary network with certain function usually, and the impedance matching circuit, balanced-unbalanced converting circuit of electricity coupled relation etc. are arranged such as the inductance network that coordinates acoustic wave filter chip work and capacitance network and other and acoustic wave filter chip.
In conventional art, the passive device auxiliary network in radio-frequency filter module or radio frequency multiplexer module is generally to realize by means of discrete component outside sheet, usually adopts surface mounting technology (SurfaceMounted Technology is referred to as SMT).As shown in Figure 1, filter chip 11 is arranged on individual layer package substrates 12, props up ball 13 by upside-down mounting and is connected with metal level 14, and discrete component (for example, can be inductance, electric capacity etc.) 15 be arranged on equally on package substrates 12, and be connected with filter chip 11 by metal level 14.This implementation will inevitably increase the pin pad number in module, causes whole module package size to increase, and then increases product cost, and do not satisfy the requirement of Miniaturization Design.Another kind of scheme is to realize the integrated of passive device by designing complicated multilayer encapsulation substrate, as shown in Figure 2, utilize the integrated a plurality of passive devices of metal level cabling 25 and through hole 24 (for example: inductance, electric capacity) in multilayer encapsulation substrate 22, and the filter chip 21 that will be arranged on package substrates 22 by bonding line 23 is connected with passive device in package substrates 22.Although this implementation has satisfied the requirement of Miniaturization Design to a certain extent, complexity and the also corresponding increase of manufacturing cost of design.
For the problem that in correlation technique, the radio circuit volume is large, cost is high, effective solution is proposed not yet at present.
Summary of the invention
For the problem that in correlation technique, the radio circuit volume is large, cost is high, the present invention proposes a kind of radio-frequency filter and radio frequency multiplexer, can improve device integrated level, reduce shared area, dwindle the volume of product, and effectively control cost.
Technical scheme of the present invention is achieved in that
According to an aspect of the present invention, provide a kind of radio-frequency filter.
This radio-frequency filter comprises: acoustic wave filter chip is used for the signal that receives is carried out filtering; Passive device miscellaneous function network, be connected with acoustic wave filter chip, be used for improving the performance of filter and/or realizing the port Impedance translation function, passive device miscellaneous function network is made by integrated passive devices (Integrated-passive device is referred to as IPD) technique.Wherein, passive device miscellaneous function network is made of inductance element and/or capacity cell, and this inductance element and/or capacity cell are produced on one or more IPD chips and realize.
Wherein, alternatively, acoustic wave filter chip is thin-film bulk acoustic wave filter chip, solid-state assembling acoustic wave filter chip or surface acoustic wave filter chip.
Alternatively, passive device miscellaneous function network is made by High resistivity substrate, and this High resistivity substrate can be High Resistivity Si, glass or sapphire.
According to embodiments of the invention, passive device miscellaneous function network has for the inner member that consists of passive device miscellaneous function network and realizes metal level, insulating barrier and the through hole of inner member interconnection.
In addition, alternatively, passive device miscellaneous function network comprise following one of at least:
Auxiliary induction network, auxiliary capacitor network, balanced-unbalanced converting circuit.
In one embodiment, acoustic wave filter chip is made by a High resistivity substrate, and passive device miscellaneous function network is made by another High resistivity substrate.At this moment, acoustic wave filter chip and passive device miscellaneous function network all are fixed on package substrates, and realize that by the metal level cabling of bonding line and/or package substrates electricity connects.In addition, acoustic wave filter chip and passive device miscellaneous function network using upside-down mounting mode are fixed on package substrates, and connect by metal level cabling and/or the through hole of package substrates.
in addition, acoustic wave filter chip adopts wafer-level packaging, wafer-level packaging comprises the first wafer and the second wafer, wherein, the first wafer is relative with the second crystal column surface, and conduct electricity or non-conducting material sealing ring bonding formation cavity by ring-type, acoustic wave filter chip is made in the first wafer towards the surface of cavity, passive device miscellaneous function network is made in the second wafer towards the surface of cavity, or be made in another surface of the second wafer, acoustic wave filter chip and passive device miscellaneous function network are realized interconnected by the columnar metal thing between wafer and/or metal throuth hole, and by metal throuth hole, electricity is connected and be drawn out to the wafer-level packaging external world, and formation metal soldered ball, wherein, metal throuth hole is positioned at the first wafer and/or the second wafer.
On the other hand, acoustic wave filter chip and passive device miscellaneous function network can be made by same High resistivity substrate.And acoustic wave filter chip is connected by a plurality of metal levels and/or through hole on High resistivity substrate with passive device miscellaneous function network.
According to a further aspect in the invention, provide a kind of radio frequency multiplexer.This radio frequency multiplexer comprises impedance matching network and the radio-frequency filter that at least one is above-mentioned, and impedance matching network is connected with radio-frequency filter.
Wherein, preferably, impedance matching network is made by integrated passive devices IPD technique, and belongs to the part of passive device miscellaneous function network.
The present invention makes passive device miscellaneous function network by integrated passive devices (referred to as IPD), passive device miscellaneous function network and acoustic wave filter chip are consisted of radio-frequency filter by the various combination mode, not only can improve device integrated level, reduce shared area, dwindle the volume of product, but also can avoid passive device is arranged in the package substrates of carrier substrate, thereby avoid complicated Multi-layer design is adopted in substrate, reduce complexity and the cost of substrate design and manufacturing.
Description of drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 adopts discrete component to realize the schematic diagram of passive device auxiliary circuit in correlation technique;
Fig. 2 adopts the multilayer encapsulation substrate to realize the schematic diagram of passive device auxiliary circuit in correlation technique;
Fig. 3 a is radio-frequency filter and the schematic diagram of passive device miscellaneous function network settings at an embodiment of different substrates;
Fig. 3 b is radio-frequency filter and the schematic diagram of passive device miscellaneous function network settings at another embodiment of different substrates;
Fig. 3 c is the cross-sectional view after structure shown in Fig. 3 b sections along line A-A ';
Fig. 4 is that radio-frequency filter and passive device miscellaneous function network settings are at the schematic diagram of an embodiment of same substrate;
Fig. 5 a is the schematic diagram according to the IPD chip structure of the embodiment of the present invention;
Fig. 5 b is the cross-sectional view after structure shown in Fig. 5 a sections along line B-B ';
Fig. 6 a carries out the structure chart of an instantiation of wafer-level packaging according to the radio-frequency filter of the embodiment of the present invention and passive device miscellaneous function network;
Fig. 6 b carries out the structure chart of another instantiation of wafer-level packaging according to the radio-frequency filter of the embodiment of the present invention and passive device miscellaneous function network;
Fig. 7 is the structure chart of the radio-frequency filter module of one embodiment of the invention;
Fig. 8 illustrates the auxiliary induction network to the curve chart of filter transmission characteristic impact;
Fig. 9 a, 9b and 9c are the connection diagrams of auxiliary induction;
Figure 10 is the structure chart of the radio-frequency filter module of another embodiment of the present invention;
Figure 11 illustrates the auxiliary capacitor network to the curve chart of filter transmission characteristic impact;
Figure 12 is the structure chart of the radio-frequency filter module of another embodiment of the present invention;
Figure 13 is the structure chart of the radio-frequency filter module of another embodiment of the present invention;
Figure 14 a-14f is the structure chart of balanced-unbalanced converting circuit;
Figure 15 is the structure chart of the radio frequency duplexer module of one embodiment of the invention;
Figure 16 is the structure chart of the radio frequency duplexer module of another embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skills obtain belongs to the scope of protection of the invention.
According to embodiments of the invention, provide a kind of radio-frequency filter (hereinafter also referred to as the radio-frequency filter module).Comprise according to the radio-frequency filter of the embodiment of the present invention: acoustic wave filter chip is used for the signal that receives is carried out filtering; Passive device miscellaneous function network, (for example be connected with acoustic wave filter chip, can connect by bonding line, also can connect by other means), be used for improving the performance of filter and/or realizing the port Impedance translation function, passive device miscellaneous function network is made by integrated passive devices (referred to as IPD) technique.Wherein, passive device miscellaneous function network is made of inductance element and/or capacity cell, and this inductance element and/or capacity cell are produced on one or more IPD chips and realize.
Wherein, alternatively, acoustic wave filter chip is thin-film bulk acoustic wave filter chip, solid-state assembling acoustic wave filter chip or surface acoustic wave filter chip.
Alternatively, passive device miscellaneous function network is made by High resistivity substrate, and this High resistivity substrate can be High Resistivity Si, glass or sapphire.
According to embodiments of the invention, passive device miscellaneous function network has for the inner member that consists of passive device miscellaneous function network and realizes metal level, insulating barrier and the through hole of inner member interconnection.
In addition, alternatively, passive device miscellaneous function network comprise following one of at least:
Auxiliary induction network, auxiliary capacitor network, balanced-unbalanced converting circuit.
In addition, will be described as an example of the piezoelectricity acoustic wave filter example hereinafter, in the following description, also the piezoelectricity acoustic wave filter chip will be called the piezoelectricity acoustic wave filter.
Pass through the solution of the present invention, can realize passive device miscellaneous function network by the IPD technology, inductance in passive device miscellaneous function network and/or electric capacity are integrated in one or more IPD chips, make the shared area of passive device less, the device pin number still less.
The below will be described the cell configuration mode that the application adopts.
(a) in certain embodiments, acoustic wave filter chip is made by a High resistivity substrate, and passive device miscellaneous function network is made by another High resistivity substrate.At this moment, acoustic wave filter chip and passive device miscellaneous function network all are fixed on package substrates, and realize that by the metal level cabling of bonding line and/or package substrates electricity connects.In addition, acoustic wave filter chip and passive device miscellaneous function network using upside-down mounting mode are fixed on package substrates, and connect by metal level cabling and/or the through hole of package substrates.
As shown in Fig. 3 a, the piezoelectricity acoustic wave filter chip (namely, corresponding to above-mentioned radio-frequency filter chip) 31 and the IPD chip (namely, above-mentioned passive device miscellaneous function network) 32 made by different High resistivity substrates, and be fixed on package substrates 34, piezoelectricity acoustic wave filter chip 31 is realized being electrically connected to by bonding line 33 with IPD chip 32.
In addition, be the another kind assembling mode of piezoelectricity acoustic wave filter chip 31 and IPD chip 32 as shown in Fig. 3 b and 3c, wherein, Fig. 3 c is the cross-sectional view after Fig. 3 b shown device sections along line A-A '.In this assembling mode, piezoelectricity acoustic wave filter chip 31 and IPD chip 32 adopt the upside-down mounting mode to prop up ball 36 by metal and are fixed on package substrates 34, and realize being electrically connected to by the metal level cabling 35 on package substrates 34, wherein, the dotted line in IPD chip 32 is used for representing that integrated inductance element is positioned at the substrate dorsal part.
(b) in further embodiments, acoustic wave filter chip and passive device miscellaneous function network can be made by same High resistivity substrate, thereby further reduce area occupied, reduce costs.At this moment, acoustic wave filter chip is connected by a plurality of metal levels and/or through hole on High resistivity substrate with passive device miscellaneous function network.As shown in Figure 4, piezoelectricity acoustic wave filter chip 41 and IPD chip are made by same High resistivity substrate 46, the IPD chip comprises IPD electric capacity 42 and IPD inductance 43, and can realize electrical connection between piezoelectricity acoustic wave filter chip 41, IPD electric capacity 42 and IPD inductance 43 by metal level 45.
(c) Fig. 5 a and Fig. 5 b show the concrete structure of IPD chip; Fig. 6 a and Fig. 6 b are that the piezoelectricity acoustic wave filter chip adopts wafer-level packaging and the IPD chip is formed on the schematic diagram of wafer-level packaging upper strata High resistivity substrate.Wherein, as shown in Fig. 5 a, the IPD chip can comprise inductance 51 and electric capacity 52, and inductance 51 and electric capacity 52 are arranged on substrate 53, and realizes being connected to each other by metal level cabling 55, and inductance 51 is connected with electric capacity and is drawn pad 54 to connect other devices.Fig. 5 b is the cross-sectional view after chip shown in Fig. 5 a sections along line B-B '.As shown in Fig. 5 b, be provided with insulating barrier 56 above substrate 53, metal level cabling 55 is positioned at below insulating barrier, and inductance 51 is connected with electric capacity 52.
Fig. 6 a and Fig. 6 b show filter chip and passive device miscellaneous function network are carried out structure after wafer-level packaging.
As shown in Fig. 6 a, in one embodiment, filter wafer 61 ' conducts electricity by ring-type with IPD wafer 62 ' or non-conducting material sealing ring 66 bondings form sealed cavity, filter wafer 61 ' has filter 61 (corresponding to above-mentioned piezoelectricity acoustic wave filter chip towards cavity side, can be also the filter chip of other types), IPD wafer 62 ' has a plurality of passive devices in cavity side dorsad, for example, can comprise the Various Components such as inductance 62 and/or electric capacity (not shown).Filter 61 is connected with passive device on IPD wafer 62 ' by metal mainstay 63 and metal throuth hole 64, and in addition, IPD wafer 62 ' can prop up ball 65 by metal and be connected with miscellaneous part, for example, can be connected with package substrates.
In another embodiment, can carry out wafer-level packaging according to the structure shown in Fig. 6 b.Be with the difference of structure shown in Fig. 6 a, form cavity in surfaces opposite to each other after filter wafer 61 ' and the 62 ' encapsulation of IPD wafer, and inductance 62 and filter chip 61 all be manufactured on the surface towards this cavity.
Except the encapsulating structure shown in Fig. 6 a and 6b, in other embodiments, metal throuth hole 64 not only can be positioned at the wafer 62 ' at passive device miscellaneous function network place, the wafer 61 ' that can also further be positioned at the acoustic wave filter chip place is (corresponding, metal prop up ball 65 also can be further from the wafer at acoustic wave filter chip place dorsad cavity one side draw), perhaps, metal throuth hole and the soldered ball of drawing also can exist only in the wafer at acoustic wave filter chip place.
Hereinafter, concrete structure and the elements combination mode of acoustic wave filter chip and passive device miscellaneous function network will be described in detail.Should be noted that in the following description, what provide is only the concrete structure example of acoustic wave filter chip and passive device miscellaneous function network, and the present invention is not limited to this.In the Fig. 7 that will describe below, Figure 10, Figure 12, Figure 13, Figure 15, Figure 16, the device in the dotted line frame in figure is the device that is produced on together.
As shown in Figure 7, radio-frequency filter 700 comprises 710 and auxiliary induction networks of a piezoelectricity acoustic wave filter (also can be described as the piezoelectricity acoustic wave filter chip, is a kind of in above-mentioned acoustic wave filter chip) (be in above-mentioned passive device miscellaneous function network a kind of) 720 according to an embodiment of the invention.
Piezoelectricity acoustic wave filter 710 is a kind of in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.Piezoelectricity acoustic wave filter 710 has single-ended-single-ended trapezoidal-structure is made of a plurality of piezoelectricity acoustic resonator S711 that are connected in series, S712, S713, S714 and a plurality of piezoelectricity acoustic resonator P711, P712, P713, P714 that is connected in parallel.
Utilize inductance L 721 and L722 to form transmission zero in the stopband frequency range that the piezoelectricity acoustic wave filter needs, reach the inhibition requirement.As shown in Figure 8, curve A 1 is not for adding the band pass filter transfer curve of auxiliary induction, curve B 1 is for adding the filter transfer curve of auxiliary induction, respectively formed a transmission zero in passband both sides, by adjusting the sense value of inductance, these two stopband transmission zero P1 can be moved in the same way, be located at required frequency range, accordingly, can increase the transmission zero number by the number that increases inductance.
Wherein, inductance L 721, L722 adopt IPD technique and are made by High resistivity substrate, and therefore, auxiliary induction network 720 also can be described as IPD chip 720.The High resistivity substrate material can be a kind of in High Resistivity Si, glass, sapphire.The induction structure that comprises in this IPD chip 720 consists of and interconnects by metal level and through hole by a plurality of metal levels of High resistivity substrate.This IPD chip 720 can adopt above-mentioned compound mode as Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when making up with piezoelectricity acoustic wave filter chip 710.
In addition, in structure shown in Figure 7, between piezoelectricity acoustic resonator P711, P712, P713, P714 and the ground that is connected in parallel, the method for series inductance can adopt the various ways shown in Fig. 9 a, Fig. 9 b, Fig. 9 c, and can adopt unshowned other modes of the present invention.The piezoelectricity acoustic resonator that is depicted as single branch in parallel as Fig. 9 a is connected to ground by a series inductance.The piezoelectricity acoustic resonator that is depicted as two branches in parallel as Fig. 9 b is connected to ground by a series inductance, and wherein these two branches in parallel can be any branches in parallel in filter, also can be connected to ground by a series inductance by a plurality of branches in parallel.The piezoelectricity acoustic resonator that is depicted as a branch in parallel as Fig. 9 c is received the near end of the piezoelectricity acoustic resonator of another branch in parallel by a series inductance, then by another series inductance ground connection.These inductance all can be integrated into as the part of auxiliary induction network in the IPD chip.And in the present embodiment, the position of institute's coilloading is not limited to shown in Fig. 7 and Fig. 9 a-c, multiple other compound modes to be arranged.
In addition, as shown in figure 10, radio-frequency filter 1000 comprises a piezoelectricity acoustic wave filter 1010 (namely in accordance with another embodiment of the present invention, corresponding to above-mentioned acoustic wave filter chip, be a kind of in acoustic wave filter chip) and auxiliary capacitor network (be in above-mentioned passive device miscellaneous function network a kind of) 1020.
Piezoelectricity acoustic wave filter 1010 is a kind of in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.Piezoelectricity acoustic wave filter 1010 has single-ended-single-ended trapezoidal-structure is made of a plurality of piezoelectricity acoustic resonator S1011 that are connected in series, S1012, S1013, S1014 and a plurality of piezoelectricity acoustic resonator P1011, P1012, P1013, P1014 that is connected in parallel.
Utilize capacitor C 1021 and C1022 to form transmission zero in the stopband frequency range that the piezoelectricity acoustic wave filter needs, reach the inhibition requirement.As shown in figure 11, curve A 2 is not for adding the band pass filter transfer curve of auxiliary capacitor, curve B 2 is for adding the filter transfer curve of auxiliary capacitor, two transmission zero P2 have been increased in substantially equidistant position, passband both sides, by adjusting capacitance, can oppositely move these two stopband transmission zeros, be located at required frequency range.Accordingly, can increase the number of transmission zero by the number that increases electric capacity.In addition, add electric capacity the position be not limited to shown in Figure 10ly, the multiple combination mode can also be arranged.
Capacitor C 1021, C1022 adopt IPD technique and are made by High resistivity substrate, and therefore, auxiliary capacitor network 1020 also can be described as IPD chip 1020.The High resistivity substrate material is one of in High Resistivity Si, glass, sapphire.The capacitance structure that comprises in this IPD chip 1020 consists of and interconnects by metal level and through hole by a plurality of metal levels and the insulating barrier of High resistivity substrate.This IPD chip 1020 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when making up with piezoelectricity acoustic wave filter chip 1010.
As shown in figure 12, the radio-frequency filter module 1200 of another embodiment comprises a piezoelectricity acoustic wave filter (namely according to the present invention, corresponding to above-mentioned acoustic wave filter chip, be a kind of in acoustic wave filter chip) 1210 and balanced-unbalanced converting circuit (be in above-mentioned passive device miscellaneous function network a kind of) 1220.
Piezoelectricity acoustic wave filter 1210 is a kind of in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.Piezoelectricity acoustic wave filter 1210 has single-ended-single-ended trapezoidal-structure is made of a plurality of piezoelectricity acoustic resonator S1211 that are connected in series, S1212, S1213 and a plurality of piezoelectricity acoustic resonator P1211, P1212, P1213 that is connected in parallel.
Balanced-unbalanced converting circuit 1220 comprises inductance L 1221 and L1222, capacitor C 1221 and C1222.Inductance L 1221 is series between first port and the second port of balanced-unbalanced converting circuit 1220, and capacitor C 1221 is parallel between second port and ground of balanced-unbalanced converting circuit 1220; Capacitor C 1222 is series between first port and the 3rd port of balanced-unbalanced converting circuit 1220, and inductance L 1221 is parallel between the 3rd port and ground of balanced-unbalanced converting circuit 1220.The first port of balanced-unbalanced converting circuit 1220 is uneven I/O port, is connected with piezoelectricity acoustic wave filter 1,210 second ports.The second port of balanced-unbalanced converting circuit 1220 and the 3rd port are balance I/O port.
In balanced-unbalanced converting circuit, the input/output signal amplitude of the second port and the 3rd port equates, single spin-echo (differing 180 °), be used for realizing filter single-ended-effect of differential conversion and impedance transformation.The structure of balanced-unbalanced converting circuit has multiple, for example, can adopt the structure as shown in Figure 14 a-f.
Inductance L 1221 and L1222, capacitor C 1221 and C1222 adopt IPD technique and are made by High resistivity substrate, and therefore, balanced-unbalanced converting circuit 1220 also can be described as IPD chip 1220.The High resistivity substrate material is a kind of in High Resistivity Si, glass, sapphire.The electric capacity that comprises in this IPD chip 1220, induction structure consist of and interconnect by metal level and through hole by a plurality of metal levels and the insulating barrier of High resistivity substrate.This IPD chip 1220 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when making up with piezoelectricity acoustic wave filter chip 1210.
As shown in figure 13, it is the radio-frequency filter module 1300 of another embodiment of the present invention, comprising a piezoelectricity acoustic wave filter (namely, corresponding to above-mentioned acoustic wave filter chip, be a kind of in acoustic wave filter chip) 1310 and balanced-unbalanced converting circuit (be in above-mentioned passive device miscellaneous function network a kind of) 1320.
Piezoelectricity acoustic wave filter 1310 is a kind of in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.Piezoelectricity acoustic wave filter 1310 has balance-balance lattice structure, is made of a plurality of piezoelectricity acoustic resonator S1311 that are connected in series, S1312, S1313, S1314 and a plurality of piezoelectricity acoustic resonator P1311, P1312, P1313, P1314 that is connected in parallel.
The structure of balanced-unbalanced converting circuit 1320 is identical with balanced-unbalanced converting circuit 1220 in Figure 12.The first port of balanced-unbalanced converting circuit 1320 is uneven I/O port.The second port of balanced-unbalanced converting circuit 1320 and the 3rd port are balance I/O port, are connected with the second port with the first port of piezoelectricity acoustic wave filter 1310 respectively.
Inductance L 1321 and L1322, capacitor C 1321 and C1322 adopt IPD technique and are made by High resistivity substrate, and therefore, balanced-unbalanced converting circuit 1320 also can be described as IPD chip 1320.The High resistivity substrate material is a kind of in High Resistivity Si, glass, sapphire.The electric capacity that comprises in this IPD chip 1320, induction structure consist of and interconnect by metal level and through hole by a plurality of metal levels and the insulating barrier of High resistivity substrate.This IPD chip 1320 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when making up with piezoelectricity acoustic wave filter chip 1310.
Similarly, the structure of the balanced-unbalanced converting circuit 1320 in Figure 13 also can have multiple, for example, can adopt the structure as shown in Figure 14 a-f.
According to the present invention, radio frequency multiplexer (for example, can be radio frequency duplexer) also is provided, radio frequency multiplexer according to the present invention comprises impedance matching network and the radio-frequency filter that at least one is above-mentioned, impedance matching network is connected with radio-frequency filter.
Preferably, impedance matching network also can be made by IPD technique.
Below in conjunction with accompanying drawing, the structure of radio frequency duplexer module is described.
As shown in figure 15, radio frequency duplexer module 1500 comprises transmission channel piezoelectricity acoustic wave filter 1510, receive path piezoelectricity acoustic wave filter 1520 and impedance matching network 1530 according to an embodiment of the invention.
In duplexer and multiplexer, impedance matching network is used for eliminating load effect, and the impact between the band pass filter that is operated in different frequency range is minimized.The form of impedance matching network also is not limited to shown in figure, can adopt passive device (inductance, electric capacity) to consist of various structures.Transmission channel filter in duplexer and receive path filter can be a kind of in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter, structure can with reference to any one or a few in above-mentioned Fig. 7, Figure 10, Figure 12, Figure 13, also can be realized by other modes.
Wherein, when transmission channel piezoelectricity acoustic wave filter 1510 adopts radio-frequency filter 1200 shown in Figure 12, preferably, the second port and the 3rd port of balanced-unbalanced converting circuit in Figure 12 1220 can be connected to the Tx end, consist of the balance input, be connected in order to have the power amplifier (PA) of balance output end with the upstream, and the first port of piezoelectricity acoustic wave filter 1210 in Figure 12 be connected to the second port of transmission channel piezoelectricity acoustic wave filter 1510 in Figure 15.On the other hand, when receive path piezoelectricity acoustic wave filter 1520 adopts radio-frequency filter 1200 shown in Figure 12, the second port and the 3rd port of balanced-unbalanced converting circuit in Figure 12 1220 can be connected to the Rx end, consist of balance output end, be connected in order to have the low noise amplifier (LNA) of balance input with the downstream, and the first port of piezoelectricity acoustic wave filter 1210 in Figure 12 be connected to the first port of receive path piezoelectricity acoustic wave filter 1520 in Figure 15.
In addition, when transmission channel piezoelectricity acoustic wave filter 1510 adopts radio-frequency filter 1300 shown in Figure 13, preferably, the first port of balanced-unbalanced converting circuit in Figure 13 1320 can be connected to impedance matching network, and the 3rd port and the 4th port of piezoelectricity acoustic wave filter 1310 in Figure 13 is connected to the Tx end.On the other hand, when receive path piezoelectricity acoustic wave filter 1520 adopts radio-frequency filter 1300 shown in Figure 13, the first port of balanced-unbalanced converting circuit in Figure 13 1320 can be connected to impedance matching network, and the 3rd port and the 4th port of piezoelectricity acoustic wave filter 1310 in Figure 13 is connected to the Rx end.
In addition, as shown in figure 15, impedance matching network 1530 comprises an inductance L 1531.The first port of the second port of transmission channel piezoelectricity acoustic wave filter 1510 and receive path piezoelectricity acoustic wave filter 1520 all is connected to the antenna end of radio frequency duplexer module 1500, and by inductance L 1531 ground connection in impedance matching network 1530.
Inductance L 1531 adopts IPD technique and is made by High resistivity substrate, and therefore, impedance matching network 1530 also can be described as IPD chip 1530.The High resistivity substrate material is a kind of in High Resistivity Si, glass, sapphire.The induction structure that comprises in this IPD chip 1530 consists of by one or more metal levels of High resistivity substrate.This IPD chip 1530 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when making up with transmission channel piezoelectricity acoustic wave filter chip 1510 and/or receive path piezoelectricity acoustic wave filter 1520.
As shown in figure 16, radio frequency duplexer module 1600 comprises transmission channel piezoelectricity acoustic wave filter 1610, receive path piezoelectricity acoustic wave filter 1620 and impedance matching network 1630 in accordance with another embodiment of the present invention.
Transmission channel piezoelectricity acoustic wave filter 1610 and receive path piezoelectricity acoustic wave filter 1620 are a kind of in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.
Wherein, when transmission channel piezoelectricity acoustic wave filter 1610 adopts radio-frequency filter 1200 shown in Figure 12, preferably, the second port and the 3rd port of balanced-unbalanced converting circuit in Figure 12 1220 can be connected to the Tx end, and the first port of piezoelectricity acoustic wave filter 1210 in Figure 12 be connected to the first port of the impedance matching network 1630 in Figure 16.On the other hand, when receive path piezoelectricity acoustic wave filter 1620 adopts radio-frequency filter 1200 shown in Figure 12, the second port and the 3rd port of balanced-unbalanced converting circuit in Figure 12 1220 can be connected to the Rx end, and the first port of piezoelectricity acoustic wave filter 1210 in Figure 12 be connected to the second port of the impedance matching network 1630 in Figure 16.
In addition, when transmission channel piezoelectricity acoustic wave filter 1610 adopts radio-frequency filter 1300 shown in Figure 13, preferably, the first port of balanced-unbalanced converting circuit in Figure 13 1320 can be connected to the first port of impedance matching network 1630, and the 3rd port and the 4th port of piezoelectricity acoustic wave filter 1310 in Figure 13 is connected to the Tx end.On the other hand, when receive path piezoelectricity acoustic wave filter 1620 adopts radio-frequency filter 1300 shown in Figure 13, the first port of balanced-unbalanced converting circuit in Figure 13 1320 can be connected to the second port of impedance matching network 1630, and the 3rd port and the 4th port of piezoelectricity acoustic wave filter 1310 in Figure 13 is connected to the Rx end.
Inductance L 1631, capacitor C 1631 and C1632 adopt IPD technique and are made by High resistivity substrate, and therefore, impedance matching network 1630 also can be described as IPD chip 1630.The High resistivity substrate material is a kind of in High Resistivity Si, glass, sapphire.The electric capacity that comprises in this IPD chip 1630, induction structure consist of and interconnect by metal level and through hole by a plurality of metal levels and the insulating barrier of High resistivity substrate.This IPD chip 1630 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when making up with transmission channel piezoelectricity acoustic wave filter chip 1610 and/or receive path piezoelectricity acoustic wave filter 1620.
It should be noted that, although Figure 15 and Figure 16 show the concrete structure of radio frequency duplexer module, but this is not intended to limit the present invention, in actual applications, the radio frequency duplexer module not only can adopt other forms of filter module, and can adopt the impedance matching network of other various ways, this paper will not enumerate.
The present invention has realized in radio-frequency filter module and radio frequency multiplexer module integrated passive devices auxiliary functional circuit on sheet, thereby has reduced the pin pad number in the module, and package dimension is reduced, thereby has reached the purpose that reduces product cost.
In sum, the present invention considers for the radio-frequency filter module with passive device auxiliary functional circuit and radio frequency multiplexer module and has proposed integrated scheme, can reduce the passive device installation cost, reduce package dimension, effectively reduce solder joint and connecting line quantity, the design complexities of facilitating chip peripheral circuit improves product reliability, and helps to reduce the cost of whole product.
The above is only preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (13)
1. a radio-frequency filter, is characterized in that, comprising:
Acoustic wave filter chip is used for the signal that receives is carried out filtering;
Passive device miscellaneous function network is connected with described acoustic wave filter chip, is used for improving the performance of filter and/or realizing the port Impedance translation function, and described passive device miscellaneous function network is made by integrated passive devices IPD technique.
2. radio-frequency filter according to claim 1, is characterized in that, described acoustic wave filter chip is thin-film bulk acoustic wave filter chip, solid-state assembling acoustic wave filter chip or surface acoustic wave filter chip.
3. radio-frequency filter according to claim 1, is characterized in that, described passive device miscellaneous function network is made by High resistivity substrate, and described High resistivity substrate is High Resistivity Si, glass or sapphire.
4. radio-frequency filter according to claim 1, is characterized in that, described passive device miscellaneous function network has be used to the inner member that consists of described passive device miscellaneous function network and realizes metal level, insulating barrier and the through hole that inner member interconnects.
5. radio-frequency filter according to claim 1, is characterized in that, described passive device miscellaneous function network comprise following one of at least:
Auxiliary induction network, auxiliary capacitor network, balanced-unbalanced converting circuit.
6. radio-frequency filter according to claim 1, is characterized in that, described acoustic wave filter chip is made by a High resistivity substrate, and described passive device miscellaneous function network is made by another High resistivity substrate.
7. radio-frequency filter according to claim 6, is characterized in that, described acoustic wave filter chip and passive device miscellaneous function network all are fixed on package substrates, and realize that by the metal level cabling of bonding line and/or described package substrates electricity connects.
8. radio-frequency filter according to claim 6, it is characterized in that, described acoustic wave filter chip and passive device miscellaneous function network using upside-down mounting mode are fixed on package substrates, and connect by metal level cabling and/or the through hole of described package substrates.
9. radio-frequency filter according to claim 1, it is characterized in that, described acoustic wave filter chip adopts wafer-level packaging, described wafer-level packaging comprises the first wafer and the second wafer, wherein, described the first wafer is relative with described the second crystal column surface, and conduct electricity or non-conducting material sealing ring bonding formation cavity by ring-type, described acoustic wave filter chip is made in described the first wafer towards the surface of described cavity, described passive device miscellaneous function network is made in described the second wafer towards the surface of described cavity, or be made in another surface of described the second wafer, described acoustic wave filter chip and passive device miscellaneous function network are realized interconnected by the columnar metal thing between wafer and/or metal throuth hole, and it is extraneous by described metal throuth hole, the electricity connection to be drawn out to described wafer-level packaging, and formation metal soldered ball, wherein, described metal throuth hole is positioned at described the first wafer and/or described the second wafer.
10. radio-frequency filter according to claim 1, is characterized in that, described acoustic wave filter chip and described passive device miscellaneous function network are made by same High resistivity substrate.
11. radio-frequency filter according to claim 10 is characterized in that, described acoustic wave filter chip is connected by a plurality of metal levels and/or through hole on described High resistivity substrate with passive device miscellaneous function network.
12. a radio frequency multiplexer is characterized in that, comprises the described radio-frequency filter of any one in impedance matching network and at least one according to claim 1-11, described impedance matching network is connected with described radio-frequency filter.
13. radio frequency multiplexer according to claim 12 is characterized in that, described impedance matching network is made by integrated passive devices IPD technique, and belongs to the part of passive device miscellaneous function network.
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