CN114743996B - Integrated passive device filter, radio frequency front end module and electronic equipment - Google Patents
Integrated passive device filter, radio frequency front end module and electronic equipment Download PDFInfo
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- CN114743996B CN114743996B CN202210330872.9A CN202210330872A CN114743996B CN 114743996 B CN114743996 B CN 114743996B CN 202210330872 A CN202210330872 A CN 202210330872A CN 114743996 B CN114743996 B CN 114743996B
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- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000011521 glass Substances 0.000 claims abstract description 67
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000010354 integration Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000001914 filtration Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses an integrated passive device filter, a radio frequency front-end module and electronic equipment. The integrated passive device filter includes: a glass substrate; at least one integrated passive device filter chip, the integrated passive device filter chip being located inside the glass substrate. The technical scheme provided by the embodiment of the invention reduces the size of the integrated passive device filter, realizes the miniaturization and high integration level of the integrated passive device filter, and improves the quality factor of the integrated passive device filter.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to an integrated passive device filter, a radio frequency front end module, and an electronic device.
Background
With the development of communication technology, the application of the broadband high-selectivity integrated passive device (Integrated Passive Device, IPD) filter of the microwave frequency band in the radio frequency front-end module is more and more widespread.
At present, an integrated passive device filter chip is usually arranged on the surface of a substrate, so that the integrated passive device filter has larger size, cannot meet the requirements of miniaturization and high integration of the integrated passive device filter, and has lower quality factor.
Disclosure of Invention
The invention provides an integrated passive device filter, a radio frequency front end module and electronic equipment, which are used for reducing the size of the integrated passive device filter, realizing miniaturization and high integration of the integrated passive device filter and improving the quality factor of the integrated passive device filter.
According to an aspect of the present invention, there is provided an integrated passive device filter including:
a glass substrate;
at least one integrated passive device filter chip, the integrated passive device filter chip being located inside the glass substrate.
Optionally, the integrated passive device filter further comprises a passive component, wherein the passive component is located inside the glass substrate and is electrically connected with the integrated passive device filter chip.
Optionally, the integrated passive device filter chip includes a first circuit layer and a first conductive blind via, where the first circuit layer and the first conductive blind via form a resonator; the integrated passive device filter further comprises a first connection pad and a second connection pad;
the first connection pad is positioned on the front surface of the glass substrate;
the second connection pad is positioned on the back surface of the glass substrate opposite to the front surface;
the first circuit layer is positioned in the glass substrate, the first connection pad is electrically connected with the first circuit layer through the conductive blind hole, and the second connection pad is electrically connected with the first circuit layer through the conductive blind hole.
Optionally, the first circuit layer includes at least two first sub-circuit layers vertically arranged, and the first sub-circuit layers with different heights are electrically connected through the first conductive blind holes.
Optionally, the first circuit layer includes an inductance or a capacitance.
Optionally, the passive component includes a second circuit layer and a second conductive blind via; the integrated passive device filter further comprises a third connection pad and a fourth connection pad;
the third connection pad is positioned on the front surface of the glass substrate;
the fourth connection pad is positioned on the back surface of the glass substrate;
the second circuit layer is positioned in the glass substrate, the third connecting pad is electrically connected with the second circuit layer through the second conductive blind hole, and the fourth connecting pad is electrically connected with the second circuit layer through the second conductive blind hole;
the second circuit layer comprises at least two second sub-circuit layers which are vertically arranged, and the second sub-circuit layers with different heights are electrically connected through the second conductive blind holes.
Optionally, the passive component includes an inductance and/or a capacitance.
According to another aspect of the present invention, there is provided a radio frequency front end module, including:
an integrated passive device filter comprising the integrated passive device filter of any of the embodiments of the present invention;
the functional chip is positioned on the surface of the glass substrate in the integrated passive device filter and is electrically connected with the integrated passive device filter through a connecting bonding pad on the surface of the integrated passive device filter.
Optionally, the functional chip includes at least one of a radio frequency switch chip, a low noise amplifier chip, a radio frequency tuning chip, and a radio frequency power amplifier chip.
According to another aspect of the present invention, an electronic device is provided, which is characterized by comprising the radio frequency front end module according to any one of the embodiments of the present invention.
According to the technical scheme provided by the embodiment of the invention, the integrated passive device filter chip is positioned in the glass substrate, and in the first aspect, the glass substrate replaces the traditional substrate, so that the loss of the glass substrate to sound waves is very low, and the quality factor of the integrated passive device filter is improved. In the second aspect, the integrated passive device filter chip is located inside the glass substrate, and compared with the integrated passive device filter chip located on the surface of the substrate, the vertical dimension of the integrated passive device filter is reduced, and the requirements of miniaturization and high integration of the integrated passive device filter are met. In the third aspect, the glass substrate replaces the traditional substrate, and in the process of preparing the glass substrate, the manufacturing of the integrated passive device filter chip can be completed through a wiring process and a glass through hole three-dimensional interconnection technology, so that the preparation process is simplified, and the preparation cost is reduced.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an integrated passive device filter according to an embodiment of the present invention;
fig. 2 is a top view of an integrated passive device filter chip provided in accordance with an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another integrated passive device filter provided according to an embodiment of the present invention;
FIG. 4 is a top view of a passive component provided in accordance with an embodiment of the present invention;
fig. 5 is a schematic structural diagram of yet another integrated passive device filter provided in accordance with an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a radio frequency front end module according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a radio frequency front end module according to the prior art.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The consumption of the battery of the application of the smart phone is increased, more and more mobile phone manufacturers need to integrate products in a mode of using modules so as to achieve the purposes of miniaturization and high integration, provide more space for the battery, and increase the battery capacity. The space occupied by the mobile phone rf device after 5G generation is relatively large, and fig. 7 shows a conventional rf module, in which the passive component 1, the filter 2, the first functional chip 3, and the second functional chip 4 are located on the surface of the substrate 01.
The passive component 1 comprises an inductance and/or a capacitance for providing an impedance matching circuit for the filter 2. The filter 2 may be a filter of a different frequency band. The first functional chip 3 is, for example, any one of a radio frequency switch chip, a low noise amplifier chip, and a radio frequency tuning chip. The second functional chip 4 comprises a radio frequency power amplifying chip. The substrate 01 may be a BT resin substrate or a core less resin substrate, which has a poor reflection effect on the acoustic wave of the filter, so that the quality factor of the filter is not high.
Therefore, in the conventional rf module, the passive component 1, the filter 2, the first functional chip 3 and the second functional chip 4 are all located on the surface of the substrate 01, so that the horizontal dimension of the rf module is very large, the available space cannot be provided for other devices, the requirements of miniaturization and high integration of the integrated passive component filter and the rf module cannot be met, the quality factor is low, and the preparation cost is high.
In order to solve the technical problems, the following technical solutions are provided in the embodiments of the present invention:
the embodiment of the invention provides an integrated passive device filter. Fig. 1 is a schematic structural diagram of an integrated passive device filter according to an embodiment of the present invention. Fig. 2 is a top view of an integrated passive device filter chip provided in accordance with an embodiment of the present invention. Referring to fig. 1 and 2, the integrated passive device filter includes: a glass substrate 100; at least one integrated passive device filter chip 10, the integrated passive device filter chip 10 being located inside the glass substrate 100.
In the present embodiment, the integrated passive device filter chip 10 is a resonator constituted by a predetermined line, and can realize a filtering function. Illustratively, the lines of the integrated passive device filter chip 10 may be equivalently a plurality of capacitors and a plurality of inductors, where the capacitors and the inductors are electrically connected to form a capacitive-inductive resonator, so as to implement a filtering function.
When the plurality of integrated passive device filter chips 10 are included inside the glass substrate 100, the filter frequency bands of the plurality of integrated passive device filter chips 10 may be the same or different.
In this embodiment, the integrated passive device filter chip 10 is located inside the glass substrate 100, and in the first aspect, the glass substrate 100 replaces the conventional substrate, and the loss of the glass substrate 100 to the acoustic wave is low, so that the quality factor of the integrated passive device filter is improved. In the second aspect, the integrated passive device filter chip 10 is located inside the glass substrate 100, and compared with the integrated passive device filter in which the integrated passive device filter chip 10 is located on the substrate surface, the vertical dimension of the integrated passive device filter is reduced, and the requirements of miniaturization and high integration of the integrated passive device filter are fulfilled. In the third aspect, the glass substrate 100 replaces the conventional substrate, and in the process of preparing the glass substrate 100, the integrated passive device filter chip 10 can be manufactured by a wiring process and a glass through hole three-dimensional interconnection technology, so that the preparation process is simplified, and the preparation cost is reduced.
Fig. 3 is a schematic structural diagram of another integrated passive device filter according to an embodiment of the present invention. Fig. 4 is a top view of a passive component according to an embodiment of the present invention. Optionally, referring to fig. 3 and 4, the integrated passive device filter further includes a passive component 20, the passive component 20 being located inside the glass substrate 100.
Specifically, the passive component 20 is used to improve the filtering performance of the integrated passive component filter chip 10. Optionally, the passive components 20 include inductors and/or capacitors for providing an impedance matching circuit for the integrated passive device filter chip 10. The passive component 20 is located inside the glass substrate 100, and compared with an integrated passive component filter in which the passive component 20 is located on the surface of the substrate, the vertical dimension of the integrated passive component filter is reduced, and the requirements of miniaturization and high integration of the integrated passive component filter are met. And the glass substrate 100 replaces the traditional substrate, and the passive component 20 can be manufactured through a wiring process and a glass through hole three-dimensional interconnection technology in the process of preparing the glass substrate 100, so that the preparation process is simplified, and the preparation cost is reduced.
Fig. 5 is a schematic structural diagram of yet another integrated passive device filter provided according to an embodiment of the present invention. Alternatively, referring to fig. 5, the integrated passive device filter chip 10 includes a first circuit layer 11 and a first conductive blind via 12, the first circuit layer 11 and the first conductive blind via 12 constituting a resonator; the integrated passive device filter further includes a first connection pad 200 and a second connection pad 300; the first connection pad 200 is located at the front surface of the glass substrate 100; the second connection pad 300 is located at a rear surface of the glass substrate 100 opposite to the front surface; the first circuit layer 11 is located inside the glass substrate 100, the first connection pad 200 is electrically connected to the first circuit layer 11 through the first conductive via 12, and the second connection pad 300 is electrically connected to the first circuit layer 11 through the first conductive via 12.
Illustratively, the first conductive blind via 12 may be fabricated in the glass substrate 100 by a glass via three-dimensional interconnect technique, and the first circuit layer 11 may be fabricated in the glass substrate 100 by a wiring process.
Specifically, the first circuit layer 11 and the first conductive blind via 12 constitute a resonator to realize the filtering function of the integrated passive device filter chip 10. Specifically, the electrical signal is input to the integrated passive device filter chip 10 through the first connection pad 200 located on the front surface of the glass substrate 100, and the integrated passive device filter chip 10 performs a filtering process on the electrical signal and then outputs the filtered electrical signal through the second connection pad 300.
Alternatively, referring to fig. 5, the first circuit layer 11 includes at least two vertically arranged first sub-circuit layers, and the first sub-circuit layers with different heights are electrically connected through the first conductive blind hole 12.
Specifically, the first sub-circuit layers which are vertically arranged are electrically connected through the first conductive blind holes 12, compared with the first circuit layer 11 which is tiled, the horizontal dimension of the integrated passive device filter is reduced, the integrated passive device filter chip 10 is positioned in the glass substrate 100, compared with the integrated passive device filter of which the integrated passive device filter chip 10 is positioned on the surface of the substrate, the requirements of miniaturization and high integration of the integrated passive device filter are further met on the basis of reducing the vertical dimension of the integrated passive device filter.
Optionally, the first circuit layer 11 comprises an inductance and/or a capacitance.
Specifically, the inductor and the capacitor are connected in series or in parallel to form a capacitor-inductor resonator, so that the filtering function is realized.
Optionally, referring to fig. 5, the passive component 20 includes a second circuit layer 21 and a second conductive blind via 22; the integrated passive device filter further includes a third connection pad 400 and a fourth connection pad 500; the third connection pad 400 is located at the front surface of the glass substrate 100; the fourth connection pad 500 is located at the rear surface of the glass substrate 100; the second circuit layer 21 is located inside the glass substrate 100, the third connection pad 400 is electrically connected to the second circuit layer 21 through the second conductive blind via 22, and the fourth connection pad 500 is electrically connected to the second circuit layer 21 through the second conductive blind via 22; the second circuit layer 21 comprises at least two vertically arranged second sub-circuit layers, and the second sub-circuit layers with different heights are electrically connected through second conductive blind holes.
Illustratively, the second conductive blind via 22 may be fabricated in the glass substrate 100 by a glass via three-dimensional interconnect technique, and the second wiring layer 21 may be fabricated in the glass substrate 100 by a wiring process.
Specifically, referring to fig. 5, the second sub-circuit layers are electrically connected through the second conductive blind holes 22, so that compared with the second circuit layer 21 which is tiled, the horizontal dimension of the integrated passive device filter is reduced, and the requirements of miniaturization and high integration of the integrated passive device filter are further met.
Fig. 6 is a schematic structural diagram of a rf front-end module according to an embodiment of the present invention. Referring to fig. 6, the radio frequency front end module includes: an integrated passive device filter 001, the integrated passive device filter 001 including the integrated passive device filter described in any of the above embodiments; the functional chip 600, the functional chip 600 is located on the surface of the glass substrate 100 in the integrated passive device filter 001, and the functional chip 600 is electrically connected to the integrated passive device filter 001 through a connection pad on the surface of the integrated passive device filter 001.
Illustratively, referring to fig. 6, the functional chip 600 is located on the front side of the glass substrate 100 in the integrated passive device filter 001. The functional chip 600 is electrically connected to the integrated passive device filter 001 through the first connection pad 200 and the third connection pad 400.
The embodiment provides a radio frequency front end module, which includes the integrated passive device filter described in any of the above embodiments, so that the radio frequency front end module has the beneficial effects of the integrated passive device filter, and specifically includes the following steps: the integrated passive device filter chip 10 is located inside the glass substrate 100, and in the first aspect, the glass substrate 100 replaces the conventional substrate, the loss of the glass substrate 100 to the acoustic wave is very low, and the quality factor of the integrated passive device filter is improved. In the second aspect, the integrated passive device filter chip 10 is located inside the glass substrate 100, and compared with the integrated passive device filter in which the integrated passive device filter chip 10 is located on the substrate surface, the vertical dimension of the integrated passive device filter is reduced, and the requirements of miniaturization and high integration of the integrated passive device filter are fulfilled. In the third aspect, the glass substrate 100 replaces the conventional substrate, and in the process of preparing the glass substrate 100, the integrated passive device filter chip 10 can be manufactured by a wiring process and a glass through hole three-dimensional interconnection technology, so that the preparation process is simplified, and the preparation cost is reduced. Because the integrated passive device filter 001 in the radio frequency front end module has the characteristics of small size and high quality factor, the size of the radio frequency front end module can be further reduced, and the performance of the radio frequency front end module is further improved.
Optionally, the functional chip 600 includes at least one of a radio frequency switch chip, a low noise amplifier chip, a radio frequency tuning chip, and a radio frequency power amplifier chip.
The functional chip 600 may be electrically connected to the connection pads on the surface of the integrated passive device filter 001 by flip-chip or wire bonding.
Illustratively, a radio frequency power amplifier chip 602 is shown in fig. 6 electrically connected to the connection pads on the surface of the integrated passive device filter 001 by wire bonding. The functional chip 601 in fig. 6 represents any one of a radio frequency switch chip, a low noise amplifier chip, and a radio frequency tuning chip.
Optionally, referring to fig. 6, a plastic sealing layer 700 is further included, where the plastic sealing layer 700 is, for example, epoxy or dry film, for protecting the rf front-end module.
The embodiment of the invention also provides electronic equipment, which comprises the radio frequency front end module set in any of the above embodiments. The electronic equipment can be a mobile phone, a computer, an unmanned aerial vehicle and the like. Because the electronic equipment comprises the radio frequency front end module in any of the embodiments, the radio frequency front end module has small size and high integration level, on one hand, space can be provided for other devices in the electronic equipment, such as a power supply module, and on the other hand, the cost of the electronic equipment is reduced.
Taking a smart phone as an example for explanation, the consumption of a battery is increased, more and more mobile phone manufacturers need to use modules to integrate products so as to achieve the purposes of miniaturization and high integration, more space is provided for the battery, the battery capacity is increased, and the space occupied by the radio frequency front-end module in the embodiment of the invention can be reduced by using the radio frequency front-end module in the smart phone, and space is provided for other devices, so that the cost of the smart phone is reduced.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (8)
1. An integrated passive device filter, comprising:
a glass substrate;
at least one integrated passive device filter chip, the integrated passive device filter chip being located inside the glass substrate;
the passive component is positioned inside the glass substrate and is electrically connected with the integrated passive component filter chip;
the passive component comprises a second circuit layer and a second conductive blind hole; the integrated passive device filter further comprises a third connection pad and a fourth connection pad;
the third connection pad is positioned on the front surface of the glass substrate;
the fourth connection pad is positioned on the back surface of the glass substrate;
the second circuit layer is positioned in the glass substrate, the third connecting pad is electrically connected with the second circuit layer through the second conductive blind hole, and the fourth connecting pad is electrically connected with the second circuit layer through the second conductive blind hole;
the second circuit layer comprises at least two second sub-circuit layers which are vertically arranged, and the second sub-circuit layers with different heights are electrically connected through the second conductive blind holes.
2. The integrated passive device filter of claim 1, wherein the integrated passive device filter chip comprises a first wiring layer and a first conductive blind via, the first wiring layer and the first conductive blind via constituting a resonator; the integrated passive device filter further comprises a first connection pad and a second connection pad;
the first connection pad is positioned on the front surface of the glass substrate;
the second connection pad is positioned on the back surface of the glass substrate opposite to the front surface;
the first circuit layer is positioned in the glass substrate, the first connection pad is electrically connected with the first circuit layer through the conductive blind hole, and the second connection pad is electrically connected with the first circuit layer through the conductive blind hole.
3. The integrated passive device filter of claim 2, wherein the first wiring layer comprises at least two vertically arranged first sub-wiring layers, and the first sub-wiring layers having different heights are electrically connected through the first conductive blind via.
4. The integrated passive device filter of claim 2, wherein the first line layer comprises an inductance or a capacitance.
5. The integrated passive device filter of claim 1, wherein the passive components comprise inductors and/or capacitors.
6. A radio frequency front end module, comprising:
an integrated passive device filter comprising the integrated passive device filter of any one of claims 1-5;
the functional chip is positioned on the surface of the glass substrate in the integrated passive device filter and is electrically connected with the integrated passive device filter through a connecting bonding pad on the surface of the integrated passive device filter.
7. The rf front-end module of claim 6, wherein the functional chip comprises at least one of a rf switch chip, a low noise amplifier chip, a rf tuning chip, and a rf power amplifier chip.
8. An electronic device comprising the radio frequency front end module of claim 6 or 7.
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| CN202210330872.9A CN114743996B (en) | 2022-03-30 | 2022-03-30 | Integrated passive device filter, radio frequency front end module and electronic equipment |
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| CN202210330872.9A CN114743996B (en) | 2022-03-30 | 2022-03-30 | Integrated passive device filter, radio frequency front end module and electronic equipment |
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| CN118692922A (en) * | 2024-08-26 | 2024-09-24 | 广东佛智芯微电子技术研究有限公司 | Glass-based multi-chip heterogeneous integrated structure and preparation method thereof |
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| WO2019132941A1 (en) * | 2017-12-28 | 2019-07-04 | Intel Corporation | Hybrid filter having an acoustic wave resonator embedded in a cavity of a package substrate |
| CN111355513A (en) * | 2018-12-20 | 2020-06-30 | 株式会社村田制作所 | High-frequency module and communication device |
| CN111628747A (en) * | 2020-04-26 | 2020-09-04 | 深圳市信维通信股份有限公司 | Filtering device, radio frequency front-end device and wireless communication device |
| CN112671368A (en) * | 2021-01-15 | 2021-04-16 | 浙江信唐智芯科技有限公司 | Filter packaged by integrated IPD technology and packaging method |
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