CN102355223B - Single-chip GSM (Global System for Mobile Communications) radio-frequency antenna switch module and GSM radio-frequency front end - Google Patents
Single-chip GSM (Global System for Mobile Communications) radio-frequency antenna switch module and GSM radio-frequency front end Download PDFInfo
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- CN102355223B CN102355223B CN201110228391.9A CN201110228391A CN102355223B CN 102355223 B CN102355223 B CN 102355223B CN 201110228391 A CN201110228391 A CN 201110228391A CN 102355223 B CN102355223 B CN 102355223B
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- 239000000758 substrate Substances 0.000 claims description 27
- 238000003475 lamination Methods 0.000 claims description 5
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- 238000004519 manufacturing process Methods 0.000 abstract description 20
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention discloses a single-chip GSM (Global System for Mobile Communications) radio-frequency antenna switch module and a GSM radio-frequency front end. The single-chip GSM radio-frequency antenna switch module comprises a radio-frequency antenna switch, a logic controller, a first low-pass filter for filtering GSM low-frequency-band transmitting signals and a second low-pass filter for filtering GSM high-frequency-band transmitting signals; the radio-frequency antenna switch, the logic controller, the first low-pass filter and the second low-pass filter are all integrated on a radio-frequency antenna switch tube core; in a network of the first low-pass filter and the second low-pass filter, at least one series inductor is implemented by metal wires and bond wires on the tube core; and the logic controller comprises a level shift circuit, and the logic controller is used for switching on or off the radio-frequency antenna switch according to logic signals. The single-chip GSM radio-frequency antenna switch module provided by the invention has the advantages of compact overall dimension and low manufacturing cost.
Description
Technical field
The present invention relates to integrated circuit fields, relate in particular to a kind of single-chip GSM radio-frequency antenna switch module and GSM radio-frequency front-end.
Background technology
GSM (Global System for Mobile Communication) is one of mobile communication standard being most widely used in the world.The shipment amount of GSM handheld device, has occupied the overwhelming majority of current all mobile communication equipment shipment amounts, and smaller szie, RF front-end module is the development trend of GSM mobile handset terminal more cheaply.Radio-frequency antenna switch is the important component part of GSM mobile handset terminal radio frequency front-end module, for the antenna of GSM mobile handset terminal being linked into radio-frequency transmissions path and radio frequency reception path.
A typical radio-frequency antenna switch module for GSM/UMTS bimodule mobile communication as shown in Figure 1.Can be seen by Fig. 1, described GSM/UMTS dual-mode radio frequency antenna switch module 101 is that a hilted broadsword nine is thrown radio-frequency (RF) switch, its hilted broadsword prevention at radio-frequency port has been connected to antenna 105, nine throw and have received respectively 9 radiofrequency signal ports: the GSM low-frequency range GSM_TX that transmits, the GSM high band DCS_TX that transmits, GSM first receives signal GSM_RX1, GSM second receives signal GSM_RX2, GSM the 3rd receives signal GSM_RX3, GSM the 4th receives signal GSM_RX4, UMTS the first transmitting and receiving signal UMTS_TRX1, UMTS the second transmitting and receiving signal UMTS_TRX2, UMTS the 3rd transmitting and receiving signal UMTS_TRX3.Radio-frequency antenna switch module 101 is also connected to power supply VDD and 4 control signal Vc1, Vc2, Vc3, Vc4, and in the Different Logic configuration control radio-frequency antenna switch module of these 4 control signals, antenna port is connected to different radio frequency path.In GSM mobile handset terminal, the GSM low-frequency range of radio-frequency antenna switch GSM_TX and the GSM high band DCS_TX that transmits that transmits has been connected respectively to the output of GSM low-frequency range power amplifier and GSM high band power amplifier.In order to meet the inhibition requirement of GSM mobile communication standard for harmonic component in antenna transmission signal, as shown in Figure 1, conventionally need between GSM_TX signal, DCS_TX signal and radio-frequency (RF) switch port, access respectively low pass filter 103,104, with the outer harmonic signal of filtering band.
Radio-frequency antenna switch in radio-frequency antenna switch module, radio-frequency antenna switch 102 as shown in Figure 1, adopts semiconductor process techniques to be fabricated to a tube core conventionally, as adopted the manufactures such as GaAs pHEMT technique or SOI technique.In theory, filter 103 and filter 104 also can adopt same semiconductor process techniques and radio-frequency (RF) switch to be manufactured on same tube core, to improve integrated level; But because the inductance element in filter can take larger die area, the radio-frequency (RF) switch tube core that makes integrated filter is not possessed to cost advantage; And the induction quality factor (Q value) in semiconductor process techniques is lower conventionally, makes the insertion loss of filter larger, has worsened the performance of whole radio-frequency transmissions front end.The mode of existing techniques in realizing radio-frequency antenna switch module mainly contains two kinds.The first is to adopt special filter manufacturing process technology (as the technique such as SAW, BAW) to manufacture discrete filter, and then by the filter of discrete manufacture and radio-frequency (RF) switch die package in same module; The implementation of this Multi-core module can make radio-frequency antenna switch module size larger conventionally; be unfavorable for the miniaturization of GSM mobile handset terminal; throw radio-frequency antenna switch product RDAES95 as GSM hilted broadsword nine and just adopted this implementation, its overall dimension is 3.2 × 4.5mm.The second is for adopting LTCC (LTCC) or similar techniques, the integrated filter of imbedding wherein in base plate for packaging, then by radio-frequency (RF) switch die package on this substrate; This implementation can obtain the radio-frequency antenna switch of miniaturization, throws radio-frequency antenna switch product E SHS-P085C9 just adopted this implementation as GSM hilted broadsword nine, and its overall dimension is only 2.5 × 2.5mm; But because ltcc substrate cost is high, and conventionally also need on ltcc substrate, mount some extra surface mount passive devices, make this implementation not possess cost advantage.
Therefore, in the urgent need to a kind of GSM radio-frequency antenna switch module, it has less overall dimension and higher integrated level, and has cheap manufacturing cost and high-performance simultaneously.
Summary of the invention
For the above-mentioned problems in the prior art, the invention provides a kind of single-chip GSM radio-frequency antenna switch module and radio-frequency front-end.
The invention provides a kind of single-chip GSM radio-frequency antenna switch module, comprise radio-frequency antenna switch, logic controller, GSM low-frequency range is transmitted and carries out the first low pass filter of filtering and GSM high band is transmitted and carries out the second low pass filter of filtering; Described radio-frequency antenna switch, logic controller, the first low pass filter and the second low pass filter are integrated on tube core; In described the first low pass filter and the second low-pass filter network, having a series inductance at least is to be realized by metal routing and bonding line on described tube core; Described logic controller comprises level shift circuit, and described logic controller is used for according to logical signal conducting or disconnects radio-frequency antenna switch.
In one example, the first low pass filter or the second low pass filter comprise the first port, the second port, the first inductance, the second inductance, the 3rd inductance, the first electric capacity, the second electric capacity;
The first inductance is connected between the first port and the second port; One end of the first electric capacity connects the first port, and the other end of the first electric capacity is through the second inductance ground connection; One end of the second electric capacity connects the second port, and the other end of the second electric capacity is through the 3rd inductance ground connection.
In one example, the first inductance of the first low pass filter or the second low pass filter is made up of metal routing 220,620 on bonding line 210,610 and tube core; The second inductance of the first low pass filter or the second low pass filter is made up of bonding line 212,612, bonding line 213,613 and bonding region 207,607, bonding line 212,612 is connected between the other end and bonding region 207,607 of described the first electric capacity of the first low pass filter or the second low pass filter, and bonding line 213,613 is connected between the bonding region 205,605 of bonding region 207,607 and electrical grounding; The 3rd inductance of the first low pass filter or the second low pass filter is made up of bonding line 214,614, and bonding line 214,614 is connected between the other end of described the second electric capacity and the bonding region of electrical grounding 206,606 of the first low pass filter or the second low pass filter.
In one example, the first inductance of the first low pass filter or the second low pass filter is fabricated directly on tube core; The second inductance of the first low pass filter or the second low pass filter is made up of bonding line 216,616, and bonding line 216,616 is connected between the other end and ground of described the first electric capacity of the first low pass filter or the second low pass filter; The 3rd inductance of the first low pass filter or the second low pass filter is made up of bonding line 219,619, and bonding line 219,619 is connected between the other end of described the second electric capacity and the bonding region of electrical grounding 206,606 of the first low pass filter or the second low pass filter.
In one example, the first inductance of the first low pass filter is made up of metal routing 220,620 on bonding line 210,610 and tube core; The second inductance of the first low pass filter is made up of bonding line 212,612, bonding line 213,613 and bonding region 207,607, bonding line 212,612 is connected between the other end and bonding region 207,607 of described the first electric capacity of the first low pass filter, and bonding line 213,613 is connected between the bonding region 205,605 of bonding region 207,607 and electrical grounding; The 3rd inductance of the first low pass filter is made up of bonding line 214,614, and bonding line 214,614 is connected between the other end of described the second electric capacity and the bonding region of electrical grounding 206,606 of the first low pass filter;
The first inductance of the second low pass filter is fabricated directly on tube core; The second inductance of the second low pass filter is made up of bonding line 216,616, and bonding line 216,616 is connected between the other end and ground of described the first electric capacity of the second low pass filter; The 3rd inductance of the second low pass filter is made up of bonding line 219,619, and bonding line 219,619 is connected between the other end of described the second electric capacity and the bonding region of electrical grounding 206,606 of the second low pass filter.
In one example, tube core is mounted on double-deck base plate for packaging, and the substrate metal region that mounts tube core is free of attachment to ground on electric.
In one example, logic controller also comprises logic coding circuit 802, inverter, the 3rd electric capacity 804, resistance 809 and field-effect transistor 805; Logical signal incoming level shift circuit 801, the output of level shift circuit 801 is connected with the input of logic coding circuit 802, one output of logic coding circuit 802 is connected with the input of inverter, the output of inverter 803 is through the 3rd electric capacity 804 ground connection, and the output of inverter 803 is also connected with the grid of field-effect transistor 805 through resistance 804, the drain electrode of field-effect transistor 805 is connected with one end of radio-frequency antenna switch, and the source electrode of field-effect transistor 806 is connected with the other end of radio-frequency antenna switch.
In one example, resistance 809 and field-effect transistor 805 are connected by lamination multiple resistance 810 and field-effect transistor 805 form.
The invention provides a kind of GSM radio-frequency front-end, comprise radio-frequency power amplifier 701, radio-frequency antenna switch module 702 and antenna 703, it is characterized in that, radio-frequency antenna switch module 702 is described single-chip GSM radio-frequency antenna switch module.
In one example, radio-frequency antenna switch module 702 comprises all or part of output matching network of radio-frequency power amplifier 701.
Single-chip GSM radio-frequency antenna switch module overall dimension compactness of the present invention, cheap for manufacturing cost, and there is the integrating filtering network of low insertion loss.
Brief description of the drawings
Below in conjunction with accompanying drawing, the present invention is described in further detail, wherein:
Fig. 1 is GSM radio-frequency antenna switch module schematic diagram;
Fig. 2 a be integrated filter single-chip GSM radio-frequency antenna switch module realize schematic diagram;
Fig. 2 b is the principle schematic of the single-chip GSM radio-frequency antenna switch module of integrated filter;
Fig. 3 a and Fig. 3 b are Pi type low-pass filter network and T-shaped low-pass filter network;
Fig. 4 a and Fig. 4 b are transmit Pi type low pass filter and frequency responses thereof of GSM low-frequency range;
Fig. 4 c and Fig. 4 d are transmit Pi type low pass filter and frequency responses thereof of improved GSM low-frequency range;
Fig. 5 a and Fig. 5 b are transmit Pi type low pass filter and frequency responses thereof of GSM high band;
Fig. 5 c and Fig. 5 d are transmit Pi type low pass filter and frequency responses thereof of improved GSM high band;
Fig. 6 is the integrated filter single-chip GSM radio-frequency antenna switch module that reduces parasitic capacitance;
Fig. 7 is the radio-frequency front-end of GSM mobile termination;
Fig. 8 a is logic controller schematic diagram provided by the invention;
Fig. 8 b is multiple field effect transistor and resistance lamination series connection schematic diagram;
Fig. 8 c is inverter circuit structure schematic diagram.
Embodiment
In order to make radio-frequency antenna switch module have compact overall dimension, the GSM low pass filter that transmits must be selected comparatively simple topological structure.Conventional low-pass first order filter topological structure comprises Pi type low-pass filter network and T-shaped low-pass filter network, as shown in Figure 3 a and Figure 3 b shows.Because T-shaped low-pass filter network comprises two series inductance elements, as the inductance L 2 in Fig. 3 b and inductance L 3, compare and only have the Pi of inductance element type low-pass filter network (as shown in Figure 3 a) will take more circuit area; And in reality realizes, between two series inductance elements in T-shaped low-pass filter network, can there is stronger electromagnetic coupling effect, worsen the performance of filter.Therefore, Pi type low-pass filter network is the preferred version of GSM low pass filter in radio-frequency antenna switch module.
In gsm communication standard, transmit and conventionally have 4 frequency range: 824-849MHz, 880-915MHz, 1710-1785MHz, 1850-1910MHz, and the first two frequency range is referred to as GSM low-frequency range, and latter two frequency range is referred to as GSM high band.
A GSM low-frequency range transmits Pi type low pass filter as shown in Fig. 4 a, and one end of capacitor C 1 is connected to the first port Port1 of filter and one end of inductance L 1; Other one end ground connection of capacitor C 1; Other one end of inductance L 1 is connected to the second port Port2 of filter and one end of capacitor C 2; Other one end ground connection of capacitor C 2.The capacitance of capacitor C 1 is 3pF, and the capacitance of capacitor C 2 is 3pF, and the sense value of inductance L 1 is 8.8nH.Under the configuration of this component value, described Pi type low pass filter can be realized in GSM low-frequency range transmits 50 ohm to 50 ohms impedance match.GSM low-frequency range transmit Pi type low pass filter frequency response as shown in Figure 4 b, the frequency that m1 is ordered is 870.0MHz, in two-port network, 2 ports are for amplitude-frequency response dB (S (2,1))=-0.001 of 1 port; The frequency that m2 is ordered is 1.740GMHz, dB (S (2,1))=-6.671; The frequency that m3 is ordered is 2.610GHz, dB (S (2,1))=-17.820; Can see at the GSM low-frequency range interior described Pi type low pass filter that transmits and there is very low insertion loss, and high frequency outside GSM low-frequency range transmits has larger decay, the harmonic signal can filtering GSM low-frequency range transmitting.In order to improve the inhibition ability to harmonic signal, transmit Pi mode filter as shown in Fig. 4 c based on transmit an improved GSM low-frequency range of Pi type low pass filter of described GSM low-frequency range.One end of capacitor C 1 is connected to the first port Port1 of filter and one end of inductance L 1; Other one end of capacitor C 1 is connected to one end of inductance L 2; Other one end ground connection of inductance L 2; Other one end of inductance L 1 is connected to the second port Port2 of filter and one end of capacitor C 2; Other one end of capacitor C 2 is connected to one end of inductance L 3; Other one end ground connection of inductance L 3.Can see, capacitor C 1 and inductance L 2 have formed electric capacity-inductance series resonance network, and capacitor C 2 and inductance L 3 have formed another one electric capacity-inductance series resonance network.The resonance frequency f of electric capacity-inductance series resonance network
cwith capacitance C
cwith inductance value L
cpass be
therefore the capacitance of capacitor C 1 is elected 2.4pF as here, the capacitance of capacitor C 2 is elected 2.65pF as, the sense value of inductance L 1 is elected 8.8nH as, the sense value of inductance L 2 is elected 3.5nH as, the sense value of inductance L 3 is elected 1.4nH as, 2 subharmonic that capacitor C 1 and inductance L 2 resonance are transmitted in GSM low-frequency range, 3 subharmonic that capacitor C 2 and inductance L 3 resonance transmit in GSM low-frequency range.Under this component value configuration, the described improved GSM low-frequency range Pi mode filter that transmits can be realized in transmitting 50 ohm of GSM low-frequency range to 50 ohms impedance match, and the resonance frequency of described first electric capacity-inductance series resonance network is 2 subharmonic that GSM low-frequency range transmits, the resonance frequency of described second electric capacity-inductance series resonance network is 3 subharmonic that GSM low-frequency range transmits.Described improved GSM low-frequency range transmits the frequency response of Pi type low pass filter as shown in Fig. 4 d, and the frequency that m1 is ordered is 870.0MHz, dB (S (2,1))=-0.006; The frequency that m2 is ordered is 1.740GMHz, dB (S (2,1))=-57.253; The frequency that m3 is ordered is 2.610GHz, dB (S (2,1))=-69.489; Can see at the GSM low-frequency range interior described improved GSM low-frequency range Pi type low pass filter that transmits that transmits and there is very low insertion loss, and high frequency outside GSM low-frequency range transmits has larger decay, and there is very large decay at 2 subharmonic that transmit in GSM low-frequency range and 3 subharmonic places.Comparison diagram 4b and Fig. 4 d, described improved GSM low-frequency range transmits in Pi mode filter owing to existing respectively resonance at electric capacity-inductance series resonance network at 2 subharmonic and 3 subharmonic places, compare the described GSM low-frequency range Pi mode filter that transmits and there is stronger harmonic signal and suppress ability, contribute to promote the performance of GSM radio-frequency antenna switch module.
A GSM high band provided by the invention transmits Pi type low pass filter as shown in Figure 5 a, and one end of capacitor C 1 is connected to the first port Port1 of filter and one end of inductance L 1; Other one end ground connection of capacitor C 1; Other one end of inductance L 1 is connected to the second port Port2 of filter and one end of capacitor C 2; Other one end ground connection of capacitor C 2.The capacitance of capacitor C 1 is 1.44pF, and the capacitance of capacitor C 2 is 1.44pF, and the sense value of inductance L 1 is 4.25nH.Under the configuration of this component value, described Pi type low pass filter can be realized in GSM high band transmits 50 ohm to 50 ohms impedance match.Described GSM high band transmit Pi type low pass filter frequency response as shown in Figure 5 b, the frequency that m1 is ordered is 1.810GHz, dB (S (2,1))=-0.001; The frequency that m2 is ordered is 3.620GHz, dB (S (2,1))=-6.714; The frequency that m3 is ordered is 5.430GHz, dB (S (2,1))=-17.820; Can see at the GSM high band interior described Pi type low pass filter that transmits and there is very low insertion loss, and high frequency outside GSM high band transmits has larger decay, the harmonic signal can filtering GSM high band transmitting.
In order to improve the inhibition ability to harmonic signal, transmit Pi mode filter as shown in Figure 5 c based on transmit an improved GSM high band of Pi type low pass filter of described GSM high band.One end of capacitor C 1 is connected to the first port Port1 of filter and one end of inductance L 1; Other one end of capacitor C 1 is connected to one end of inductance L 2; Other one end ground connection of inductance L 2; Other one end of inductance L 1 is connected to the second port Port2 of filter and one end of capacitor C 2; Other one end of capacitor C 2 is connected to one end of inductance L 3; Other one end ground connection of inductance L 3.Can see, capacitor C 1 and inductance L 2 have formed electric capacity-inductance series resonance network, and capacitor C 2 and inductance L 3 have formed another one electric capacity-inductance series resonance network.The resonance frequency f of electric capacity-inductance series resonance network
cwith capacitance C
cwith inductance value L
cpass be
therefore the capacitance of capacitor C 1 is elected 1.38pF as here, and the capacitance of capacitor C 2 is elected 1.3pF as, and the sense value of inductance L 1 is elected 4.25nH as, and the sense value of inductance L 2 is elected 1.4nH as, and the sense value of inductance L 3 is elected 0.66nH as.Under this component value configuration, the described improved GSM high band Pi mode filter that transmits can be realized in transmitting 50 ohm of GSM high band to 50 ohms impedance match, and the resonance frequency of described first electric capacity-inductance series resonance network is 2 subharmonic that GSM low-frequency range transmits, the resonance frequency of described second electric capacity-inductance series resonance network is 3 subharmonic that GSM low-frequency range transmits.Described improved GSM high band transmits the frequency response of Pi type low pass filter as shown in Fig. 5 d, and the frequency that m1 is ordered is 1.810GHz, dB (S (2,1))=-0.052; The frequency that m2 is ordered is 3.620GHz, dB (S (2,1))=-77.157; The frequency that m3 is ordered is 5.430GHz, dB (S (2,1))=-75.807; Can see at the GSM high band interior described improved GSM high band Pi type low pass filter that transmits that transmits and there is very low insertion loss, and high frequency outside GSM high band transmits has larger decay, and there is very large decay at 2 subharmonic that transmit at GSM high band and 3 subharmonic places.Comparison diagram 5b and Fig. 5 d, described improved GSM high band transmits in Pi mode filter owing to existing respectively resonance at electric capacity-inductance series resonance network at 2 subharmonic and 3 subharmonic places, compare the described GSM high band Pi mode filter that transmits and there is stronger harmonic signal and suppress ability, contribute to promote the performance of GSM radio-frequency antenna switch module.
Technical scheme proposed by the invention has adopted the GSM low-frequency range as shown in Fig. 4 c and Fig. 5 c to transmit and GSM high band the transmits topological structure of low pass filter.It should be noted that, above in described filter the component value of electric capacity, inductance only as example, instead of for restriction of the present invention, component value during practical filter realizes need to be set according to the concrete condition of circuit, thereby for example in specific implementation, also needs to consider that antenna and radio-frequency (RF) switch need to adjust the component value of filter the impact of port of wave filter impedance.
As shown in Figure 2 a and 2 b, Fig. 2 a realizes schematic diagram for it to single-chip GSM radio-frequency antenna switch module proposed by the invention, and Fig. 2 (b) is depicted as its principle schematic.Single-chip GSM radio-frequency antenna switch module 201 comprised double layer substrate 200 and has been mounted on the radio-frequency antenna switch tube core 202 on double layer substrate 200, and the region 203 that mounts tube core 202 is ground connection on electric.The bonding region 206,205 on substrate upper strata is connected with region 203 with 206, on electric, is therefore also ground connection.
The GSM low-frequency range GSM_TX that transmits is connected to the bonding welding pad on tube core 202 by substrate pin and bonding line, and is connected to transmit first pole plate of electric capacity 208 (this electric capacity is manufactured on tube core) of low pass filter of GSM low-frequency range; The second pole plate of electric capacity 208 is connected to the bonding region 207 on substrate upper strata by bonding line 212; Another one bonding line 213 is connected to the bonding region 205 of electrical grounding from bonding region 207.The first pole plate of electric capacity 208 has been also connected to the first port by the inductance that on tube core 202, metal routing 220, bonding welding pad 209 and bonding line 210 form; The second port of described inductance is connected to the first pole plate of the electric capacity 211 being manufactured on tube core; The second pole plate of electric capacity 211 is connected to the bonding region, substrate upper strata 206 of electrical grounding by bonding line 214.Contrast Fig. 2 a and Fig. 2 b, and foregoing Fig. 4 c, can see, first electric capacity-inductance series resonance network that GSM low-frequency range transmits in low pass filter is made up of electric capacity 208, bonding line 212, bonding region 207, bonding line 213 and bonding region 205; Series inductance in filter is made up of metal routing 220, bonding welding pad 209 and bonding line 210 on tube core 202; Second electric capacity-inductance series resonance network in filter is made up of electric capacity 211, bonding line 214 and bonding region 206.Because GSM low-frequency range emission signal frequency is relatively low, inductance value required in its filter is larger, and for example wherein the value of series inductance is all greater than 5nH conventionally, in resonant network to ground inductance be conventionally greater than 1nH.In technical scheme proposed by the invention, the GSM low-frequency range series inductance in low pass filter that transmits is made up of jointly the bonding region on metal routing, bonding line and substrate on tube core, being formed by bonding line to ground inductance in resonant network, this obviously makes the size of whole radio-frequency antenna switch module very compact; And the high Q value of bond-wire inductor also makes filter have lower insertion loss.It should be noted that, in order to obtain required inductance value, GSM low-frequency range transmit in low pass filter series inductance can by adjust the length of length, width, number and the corresponding adjustment bonding line 210 of metal routing 220 on tube core 202, highly, number realizes.It should be noted that in addition, realize the inductance element in filter owing to having adopted the bonding line with stronger regulating power, also make filter there is stronger regulating power, strengthened the tolerance of whole radio-frequency antenna switch module to manufacturing process tolerance, improve its fine ratio of product.
The GSM high band DCS_TX that transmits is connected to the bonding welding pad on tube core 202 by substrate pin and bonding line, and is connected to transmit first pole plate of electric capacity 215 (this electric capacity is manufactured on tube core) of low pass filter of GSM high band; The second pole plate of electric capacity 215 is connected to substrate ground pin GND by bonding line 216.The first pole plate of electric capacity 215 has been also connected to the first port of the planar spiral inductor 217 of manufacturing on tube core 202; The second port of described inductance 217 is connected to the first pole plate of the electric capacity 218 being manufactured on tube core; The second pole plate of electric capacity 218 is connected to the bonding region, substrate upper strata 206 of electrical grounding by bonding line 219.Contrast Fig. 2 a and Fig. 2 b, and foregoing Fig. 5 c, can see, first electric capacity-inductance series resonance network that GSM high band transmits in low pass filter is made up of electric capacity 215, bonding line 216; Series inductance in filter is made up of the inductance 217 of manufacturing on tube core 202; Second electric capacity-inductance series resonance network in filter is made up of electric capacity 218, bonding line 219.Because GSM high band emission signal frequency is relatively high, in its filter, the required relative GSM low-frequency range of inductance value transmits littlely, and for example wherein the value of series inductance is less than 5nH conventionally, therefore can on tube core, realize with less chip area; Certainly, described series inductance also can adopt bonding line mode to realize, and adopting the inductance of manufacturing on tube core to realize is here not limitation of the present invention.In technical scheme proposed by the invention, GSM high band being formed by bonding line to ground inductance of resonant network in low pass filter that transmit, make the size of whole radio-frequency antenna switch module very compact, and the high Q value of bond-wire inductor also make filter have lower insertion loss.It should be noted that in addition, realize the inductance element in filter owing to having adopted the bonding line with stronger regulating power, also make filter there is stronger regulating power, strengthened the tolerance of whole radio-frequency antenna switch module to manufacturing process tolerance, improve its fine ratio of product.The overall dimension of single-chip GSM radio-frequency antenna switch module 201 is not more than 2.5 × 2.5mm, and does not need to adopt the special fabrication processes such as expensive LTCC, and double layer substrate that only need be conventional in semiconductor packages can be realized.
Another one embodiment of the present invention as shown in Figure 6.Different from technical scheme shown in Fig. 2 is, the tube core pasting area 603 that mounts radio-frequency (RF) switch tube core 602 in single-chip GSM radio-frequency antenna switch module 601 on double layer substrate 606 is not electrical grounding, bonding region 606,605,606 difference independent electrical grounding separately.In radio-frequency switch circuit, especially throw several more radio-frequency switch circuits, no matter be to adopt GaAs pHEMT technique, SOI technique or other semiconductor technologies, larger area transistor is used in capital, make these transistors there is larger parasitic capacitance over the ground, can worsen the performance of radio-frequency antenna switch.In the present embodiment, tube core pasting area 603 is free of attachment to ground on electric, has been equivalent to increase transistor on tube core and has arrived the electrically distance of plane, effectively reduces transistorized parasitic capacitance over the ground on tube core.For example, the thickness of double layer substrate used is 100um-300um conventionally, and these extra transistors that increase arrive the electrically distance of plane, can make transistorized conventionally negligible to ground parasitic capacitance.The overall dimension of single-chip GSM radio-frequency antenna switch module 601 is not more than 2.5 × 2.5mm, and does not need to adopt the special fabrication processes such as expensive LTCC, and double layer substrate that only need be conventional in semiconductor packages can be realized.
The GSM low-frequency range GSM_TX that transmits is connected to the bonding welding pad on tube core 602 by substrate pin and bonding line, and is connected to transmit first pole plate of electric capacity 608 (this electric capacity is manufactured on tube core) of low pass filter of GSM low-frequency range; The second pole plate of electric capacity 608 is connected to the bonding region 607 on substrate upper strata by bonding line 612; Another one bonding line 613 is connected to the bonding region 605 of electrical grounding from bonding region 607.The first pole plate of electric capacity 608 has been also connected to the first port by the inductance that on tube core 602, metal routing 620, bonding welding pad 609 and bonding line 610 form; The second port of described inductance is connected to the first pole plate of the electric capacity 611 being manufactured on tube core; The second pole plate of electric capacity 611 is connected to the bonding region, substrate upper strata 206 of electrical grounding by bonding line 614.Contrast Fig. 2 a and Fig. 2 b, and foregoing Fig. 4 c, can see, first electric capacity-inductance series resonance network that GSM low-frequency range transmits in low pass filter is made up of electric capacity 608, bonding line 612, bonding region 607, bonding line 613 and bonding region 605; Series inductance in filter is made up of metal routing 620, bonding welding pad 609 and bonding line 610 on tube core 602; Second electric capacity-inductance series resonance network in filter is made up of electric capacity 611, bonding line 614 and bonding region 606.Because GSM low-frequency range emission signal frequency is relatively low, inductance value required in its filter is larger, and for example wherein the value of series inductance is all greater than 5nH conventionally, in resonant network to ground inductance be conventionally greater than 1nH.In technical scheme proposed by the invention, the GSM low-frequency range series inductance in low pass filter that transmits is made up of jointly bonding region on metal routing, bonding line and substrate on tube core, being formed by bonding line to ground inductance in resonant network, this obviously makes the size of whole radio-frequency antenna switch module very compact; And the high Q value of bond-wire inductor also makes filter have lower insertion loss.It should be noted that, in order to obtain required inductance value, GSM low-frequency range transmit in low pass filter series inductance can by adjust the length of length, width, number and the corresponding adjustment bonding line 610 of metal routing 620 on tube core 602, highly, number realizes.It should be noted that in addition, realize the inductance element in filter owing to having adopted the bonding line with stronger regulating power, also make filter there is stronger regulating power, strengthened the tolerance of whole radio-frequency antenna switch module to manufacturing process tolerance, improve its fine ratio of product.
The GSM high band DCS_TX that transmits is connected to the bonding welding pad on tube core 602 by substrate pin and bonding line, and is connected to transmit first pole plate of electric capacity 615 (this electric capacity is manufactured on tube core) of low pass filter of GSM high band; The second pole plate of electric capacity 615 is connected to substrate ground pin GND by bonding line 616.The first pole plate of electric capacity 615 has been also connected to the first port of the inductance 617 of manufacturing on tube core 602; The second port of described inductance 617 is connected to the first pole plate of the electric capacity 618 being manufactured on tube core; The second pole plate of electric capacity 618 is connected to the bonding region, substrate upper strata 206 of electrical grounding by bonding line 619.Contrast Fig. 2 a and Fig. 2 b, and foregoing Fig. 5 c, can see, first electric capacity-inductance series resonance network that GSM high band transmits in low pass filter is made up of electric capacity 615, bonding line 616; Series inductance in filter is made up of the inductance 617 of manufacturing on tube core 602; Second electric capacity-inductance series resonance network in filter is made up of electric capacity 618, bonding line 619.Because GSM high band emission signal frequency is relatively high, the relative GSM low-frequency range of inductance value required in its filter is less, and for example wherein the value of series inductance is less than 5nH conventionally, therefore can on tube core, realize with less chip area; Certainly, described series inductance also can adopt bonding line mode to realize, and adopting the inductance of manufacturing on tube core to realize is here not limitation of the present invention.In technical scheme proposed by the invention, GSM high band being formed by bonding line to ground inductance of resonant network in low pass filter that transmit, make the size of whole radio-frequency antenna switch module very compact, and the high Q value of bond-wire inductor also make filter have lower insertion loss.It should be noted that in addition, realize the inductance element in filter owing to having adopted the bonding line with stronger regulating power, also make filter there is stronger regulating power, strengthened the tolerance of whole radio-frequency antenna switch module to manufacturing process tolerance, improve its fine ratio of product.The overall dimension of single-chip GSM radio-frequency antenna switch module 601 is not more than 2.5 × 2.5mm, and does not need to adopt the special fabrication processes such as expensive LTCC, and double layer substrate that only need be conventional in semiconductor packages can be realized.
As mentioned above, optimization by filter topology and adopt the mode that on tube core, metal routing, element are combined with bonding line to realize inductance element, a kind of GSM radio-frequency antenna switch of integrated filter is provided, has there is compact overall dimension, cheap manufacturing cost and the integrating filtering network of low insertion loss.
Integrated logic controller on tube core in single-chip GSM radio-frequency antenna switch module proposed by the invention, is connected to different radio frequency path for the logical signal of input being carried out to logic coding to control radio-frequency (RF) switch antenna port.As shown in Figure 8 a, first 4 logical signal Vc1, Vc2, Vc3, the Vc4 of the outside input of single-chip GSM radio-frequency antenna switch module process through the level shift circuit 801 in logic controller the schematic diagram of logic controller.Level shift circuit 801 is expanded the logic low of input logic signal and the high corresponding voltage range of logic, export as level shift circuit in the time that input logic signal voltage is 0V-0.5V scope the logic low signal that can remain valid, in the time that input logic signal voltage is 1.6V-VDD, level shift circuit is exported the logic high signal that can remain valid.Level shift circuit obviously can make the reliability of single-chip GSM radio-frequency antenna switch module of the present invention get a promotion.The output signal of level shift circuit is input in logic coding circuit 802, and logic coding circuit 802 carries out logic coding to the output signal of level shift circuit.The output signal of logic coding circuit 802 is input to inverter 803, and the output of inverter 803 is connected to one end of an electric capacity 804, and the other end of electric capacity 804 is connected to ground; The output of inverter 803 is also connected to one end of resistance 809, and other one end of resistance 809 is connected to the grid (G) as the field-effect transistor 805 of radio-frequency (RF) switch device.Drain electrode (D) and the source electrode (S) of field-effect transistor 805 are connected respectively to two radiofrequency signal port Port3 and Port4, in the time that the grid voltage of field-effect transistor 805 is high level, field-effect transistor 805 conductings, form conducting radio frequency path between radiofrequency signal port Port3 and Port4; In the time that the grid voltage of field-effect transistor 805 is low level, field-effect transistor 805 ends, and between radiofrequency signal port Port3 and Port4, there is no radio frequency path.As shown in Figure 8 b, it can be the lamination series connection of multiple field-effect transistors 806 and resistance 810 as the field-effect transistor 805 of radio-frequency (RF) switch device, specifically need the 806 lamination series connection of how many field-effect transistors to need to select according to circuit concrete condition, the present invention does not limit explanation to it.Be the schematic diagram of inverter 803 as shown in Figure 8 c, comprise a p type field effect transistor 807 and a n type field effect transistor 808; The grid of field-effect transistor 807 is connected to the grid of field-effect transistor 808 and is connected to the input signal IN of inverter; The drain electrode of field-effect transistor 807 is connected to the drain electrode of field-effect transistor 808 and is connected to the output signal OUT of inverter; The source electrode of field-effect transistor 807 is connected to supply voltage VDD; The source electrode of field-effect transistor 808 is connected to ground.As shown in Figure 8 a, the output of inverter 803 is connected with electric capacity 804, and it is low-resistance that the existence of electric capacity 804 makes the output impedance of inverter 803, has increased the driving force of inverter 803, has also weakened the interference of radiofrequency signal to logical circuit simultaneously.
In the aforementioned embodiment, integratedly in single-chip GSM radio-frequency antenna switch module of the present invention transmit and the filter of the harmonic signal that high band transmits for filtering GSM low-frequency range, its transmit port GSM_TX and DCS_TX have been impedance-matched to 50 ohm.In fact, in single-chip GSM radio-frequency antenna switch module of the present invention, the port Impedance of integrated filter also can match other impedance outside 50 ohm.For example in single-chip GSM radio-frequency antenna switch module, integrated FL-network can form part or all of the needed output matching network of radio-frequency power amplifier, its port Impedance matches the needed load impedance of radio-frequency power amplifier work, and these personnel for this professional domain are understandable.As shown in Figure 7, the output signal of radio-frequency power amplifier 701 is input to radio-frequency antenna switch module 702, and the aerial signal end of radio-frequency antenna switch module 702 has been connected to antenna 703.The needed output matching network of radio-frequency power amplifier work both can all be included in radio-frequency power amplifier 701 inside in way of realization, also can all be included in radio-frequency antenna switch module 702 inside, or part realizes at radio-frequency antenna switch 702 in radio-frequency power amplifier 701, part.Preferably, radio-frequency power amplifier 701 and radio-frequency antenna switch module 702 can be integrated in a RF front-end module, can effectively reduce the size of radio-frequency front-end in mobile terminal.
Claims (9)
1. a single-chip GSM radio-frequency antenna switch module, it is characterized in that, comprise radio-frequency antenna switch, logic controller, GSM low-frequency range is transmitted and carries out the first low pass filter of filtering and GSM high band is transmitted and carries out the second low pass filter of filtering; Described radio-frequency antenna switch, logic controller, the first low pass filter and the second low pass filter are integrated on a tube core; In described the first low pass filter and the second low-pass filter network, having a series inductance at least is to be realized by the metal routing on described tube core and bonding line; Described logic controller comprises level shift circuit, described logic controller is used for according to logical signal conducting or disconnects radio-frequency antenna switch, wherein, tube core is mounted on double-deck base plate for packaging, and the substrate metal region that mounts tube core is free of attachment to ground on electric.
2. single-chip GSM radio-frequency antenna switch module as claimed in claim 1, is characterized in that, the first low pass filter or the second low pass filter comprise the first port, the second port, the first inductance, the second inductance, the 3rd inductance, the first electric capacity, the second electric capacity;
The first inductance is connected between the first port and the second port; One end of the first electric capacity connects the first port, and the other end of the first electric capacity is through the second inductance ground connection; One end of the second electric capacity connects the second port, and the other end of the second electric capacity is through the 3rd inductance ground connection.
3. single-chip GSM radio-frequency antenna switch module as claimed in claim 2, it is characterized in that, the first inductance of the first low pass filter or the second low pass filter is made up of the metal routing (220,620) on first key zygonema (210,610) and described tube core; The second inductance of the first low pass filter or the second low pass filter is by the second bonding line (212,612), the 3rd bonding line (213,613) and the first bonding region (207,607) formation, the second bonding line (212,612) is connected between the other end and the first bonding region (207,607) of described the first electric capacity of the first low pass filter or the second low pass filter, and the 3rd bonding line (213,613) is connected between the second bonding region (205,605) of the first bonding region (207,607) and electrical grounding; The 3rd inductance of the first low pass filter or the second low pass filter is made up of quadruple linkage zygonema (214,614), and quadruple linkage zygonema (214,614) is connected between the other end of described the second electric capacity and the 3rd bonding region (206,606) of electrical grounding of the first low pass filter or the second low pass filter.
4. single-chip GSM radio-frequency antenna switch module as claimed in claim 2, is characterized in that, the first inductance of the first low pass filter or the second low pass filter is fabricated directly on tube core; The second inductance of the first low pass filter or the second low pass filter is made up of the 5th bonding line (216,616), and the 5th bonding line (216,616) is connected between the other end and ground of described the first electric capacity of the first low pass filter or the second low pass filter; The 3rd inductance of the first low pass filter or the second low pass filter is made up of the 6th bonding line (219,619), and the 6th bonding line (219,619) is connected between the other end of described the second electric capacity and the 3rd bonding region (206,606) of electrical grounding of the first low pass filter or the second low pass filter.
5. single-chip GSM radio-frequency antenna switch module as claimed in claim 2, is characterized in that, the first inductance of the first low pass filter is made up of the metal routing (220,620) on first key zygonema (210,610) and described tube core; The second inductance of the first low pass filter is by the second bonding line (212,612), the 3rd bonding line (213,613) and the first bonding region (207,607) formation, the second bonding line (212,612) is connected between the other end and the first bonding region (207,607) of described the first electric capacity of the first low pass filter, and the 3rd bonding line (213,613) is connected between the second bonding region (205,605) of the first bonding region (207,607) and electrical grounding; The 3rd inductance of the first low pass filter is made up of quadruple linkage zygonema (214,614), and quadruple linkage zygonema (214,614) is connected between the other end of described the second electric capacity and the 3rd bonding region (206,606) of electrical grounding of the first low pass filter;
The first inductance of the second low pass filter is fabricated directly on tube core; The second inductance of the second low pass filter is made up of the 5th bonding line (216,616), and the 5th bonding line (216,616) is connected between the other end and ground of described the first electric capacity of the second low pass filter; The 3rd inductance of the second low pass filter is made up of the 6th bonding line (219,619), and the 6th bonding line (219,619) is connected between the other end of described the second electric capacity and the 3rd bonding region (206,606) of electrical grounding of the second low pass filter.
6. single-chip GSM radio-frequency antenna switch module as claimed in claim 1, it is characterized in that, logic controller also comprises logic coding circuit (802), inverter, the 3rd electric capacity (804), resistance (809) and field-effect transistor (805), logical signal incoming level shift circuit (801), the output of level shift circuit (801) is connected with the input of logic coding circuit (802), one output of logic coding circuit (802) is connected with the input of inverter, the output of inverter (803) is through the 3rd electric capacity (804) ground connection, and the output of inverter (803) is also connected with the grid of field-effect transistor (805) through resistance (804), the drain electrode of field-effect transistor (805) is connected with one end of radio-frequency antenna switch, the source electrode of field-effect transistor (806) is connected with the other end of radio-frequency antenna switch.
7. single-chip GSM radio-frequency antenna switch module as claimed in claim 6, is characterized in that, field-effect transistor (805) is composed in series by multiple field-effect transistors (806) and resistance (810) lamination.
8. a GSM radio-frequency front-end, comprise radio-frequency power amplifier (701), radio-frequency antenna switch module (702) and antenna (703), it is characterized in that, radio-frequency antenna switch module (702) is the single-chip GSM radio-frequency antenna switch module as described in claim 1-7 any one.
9. GSM radio-frequency front-end as claimed in claim 8, is characterized in that, also comprises all or part of output matching network of radio-frequency power amplifier (701) in described radio-frequency antenna switch module (702).
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| CN103794871A (en) | 2014-01-23 | 2014-05-14 | 华为终端有限公司 | Antenna system and terminal |
| CN103825571B (en) * | 2014-03-05 | 2017-04-05 | 锐迪科创微电子（北京）有限公司 | Realize the radio-frequency antenna switch circuit of impedance matching |
| CN103973291B (en) | 2014-04-22 | 2017-02-01 | 华为技术有限公司 | Radio frequency antenna switch |
| CN104467776A (en) * | 2014-11-18 | 2015-03-25 | 锐迪科创微电子（北京）有限公司 | Single-chip radio frequency antenna switch module and radio frequency front end |
| US9565768B2 (en) * | 2015-03-25 | 2017-02-07 | Infineon Technologies Americas Corp. | Semiconductor package with integrated output inductor on a printed circuit board |
| CN105514094A (en) * | 2016-01-29 | 2016-04-20 | 宜确半导体（苏州）有限公司 | Radio frequency antenna switch chip |
| CN109241578B (en) * | 2018-08-14 | 2023-04-07 | 上海东软载波微电子有限公司 | Low-pass filter design method and device |
| CN111294067B (en) * | 2020-01-16 | 2022-07-12 | 上海闻泰信息技术有限公司 | Diversity receiving module, processing method of radiation stray and electronic equipment |
| CN112367057B (en) * | 2020-11-09 | 2024-06-25 | 中国科学院微电子研究所 | Composite structure frequency hopping filter and adjusting method thereof |
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| CN1282139A (en) * | 1999-07-22 | 2001-01-31 | 摩托罗拉公司 | Amplifier load regulating system based on memory |
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