CN102354725B - High-power light emitting diode with radiating substrate made of diamond-like film-copper composite material - Google Patents
High-power light emitting diode with radiating substrate made of diamond-like film-copper composite material Download PDFInfo
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- CN102354725B CN102354725B CN2011103341610A CN201110334161A CN102354725B CN 102354725 B CN102354725 B CN 102354725B CN 2011103341610 A CN2011103341610 A CN 2011103341610A CN 201110334161 A CN201110334161 A CN 201110334161A CN 102354725 B CN102354725 B CN 102354725B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention discloses a high-power light emitting diode with a radiating substrate made of a diamond-like film-copper composite material. The diode comprises an LED (Light Emitting Diode) chip, a lens, a reflection cup and the radiating substrate made of the diamond-like film-copper composite material, wherein the LED chip is positioned in the reflection cup; the lens is positioned above the reflection cup; the lower surface of the cooling substrate directly contacts with air; and the LED chip is directly placed on the upper surface of the cooling substrate by die attaching resin or metal eutectic welding. The composite material disclosed by the invention extracts heat from high-power LED via a shortest path, and directly emits heat to the air so as to effectively lower the junction temperature of the LED. Because the composite material can lower the thermal resistance of the whole LED packaging structure, the composite material can be used for cooling single high-power LED and an LED module by combining with an optimized structural design, thereby realizing high-luminance shining for a long term.
Description
Technical field
The present invention relates to LED invention technical field, the present invention relates to LED invention technical field, especially, relate to a kind of direct employing diamond-film-like-carbon/carbon-copper composite material as the great power LED of heat-radiating substrate.
Background technology
Driving voltage is low, the life-span is long, luminous flux is high because having for LED light source, anti-vibration, be not afraid of the plurality of advantages such as switch repeatedly, the structure of power supply is little and safe, efficient, energy-conservation, has become the best light source that substitutes traditional invention light source and has selected.Fast development along with the LED technology, the great power LED technology of preparing reaches its maturity, but, present LED invention, generally that a large amount of common little LED pipes or a plurality of power tube are concentrated in a light fixture, and adopt the design of sealed beam lamp lamps structure, typical example is exactly to make the backlight of large scale liquid crystal display of LED more.The photoelectric conversion efficiency of LED does not reach 100%, and along with the increasing of electric current, the heat of generation also increases.This makes the heat dissipation problem of LED become very outstanding, has a strong impact on light source stability and the useful life of LED.Mostly existing high-power LED chip package material is aluminium base and co-fired ceramic substrate, cannot reach good radiating effect, and existing encapsulating structure also needs to make a lot of improvement in addition.
Summary of the invention
Technical problem to be solved by this invention is the heat dissipation problem that overcomes existing LED chip, and it is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material that heat-radiating substrate is provided.The present invention can realize by following a plurality of technical schemes:
Heat-radiating substrate is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material, comprise LED chip, lens and reflector, LED chip is arranged in reflector, and lens are positioned at above reflector, and it also comprises the heat-radiating substrate that diamond-film-like-carbon/carbon-copper composite material is made; The lower surface of described heat-radiating substrate directly contacts with air; LED chip directly is placed in the upper surface of heat-radiating substrate by crystal-bonding adhesive or the weldering of metal eutectic.
Be the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, the lower surface of the heat-radiating substrate that described diamond-film-like-carbon/carbon-copper composite material is made or lower surface and upper surface are diamond-film-like.
It is the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, the upper surface of heat-radiating substrate is copper, lower surface is diamond-film-like, and the upper surface of heat-radiating substrate is bonded with circuit layer by the adhesive layer of insulation; Adhesive layer and circuit layer have the hole of passing for LED chip.
It is the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, it also comprises circuit layer, the upper surface of heat-radiating substrate and lower surface are diamond-film-like, and circuit layer is directly arranged on the upper surface diamond-film-like; Circuit layer has the hole of passing for LED chip, and reflector is positioned on circuit layer.
It is the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, the lower surface of heat-radiating substrate is diamond-film-like, it is diamond-film-like that upper surface is settled the place of LED chip, other places of upper surface are copper, and the upper surface of heat-radiating substrate is bonded with circuit layer by the adhesive layer of insulation; Adhesive layer and circuit layer have the hole of passing for LED chip
Be the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, the heat-radiating substrate lower surface is processed into radiating fin, and radiating fin is diamond-film-like-carbon/carbon-copper composite material; Reflector is copper or copper and diamond like carbon film composite material.
Be the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, be filled with the sealant of the lead-in wire that covers LED chip and LED chip in reflector.
Be the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, be mixed with fluorescent material in described sealant.
Be the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, described LED chip has a plurality of, and is arranged in reflector.
It is the technical scheme of further optimization of the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material as above-mentioned heat-radiating substrate, making by the following method of described diamond-film-like-carbon/carbon-copper composite material: allow hydrogen and methane reaction generate diamond-film-like by microwave resonance plasma reinforced chemical vapour deposition technology, wherein the incident microwave is the TE10 mould, microwave frequency is 1 ~ 2. 45GHz, and microwave power is 850 ~ 950W; (100) face silicon chip after the employing polishing first passes through acetone, alcohol, deionized water ultrasonic cleaning successively as substrate, and every kind of reagent cleaned 5 ~ 8 minutes, then dried up with nitrogen; The adjusting hydrogen flowing quantity is 10-50sccm, and methane flow is 5-50sccm, and substrate vacuum is (1.0 ~ 5. 0) * 10
-3Pa, the injection back bias voltage is 10 ~ 30KV, and pulse frequency is 100 ~ 300HZ, and pulsewidth is 10 ~ 20 μ s; In deposition process, substrate temperature remains on 300 ~ 500 ℃, and sedimentation time is 15 ~ 20 hours, and the diamond like carbon film thickness of deposition reaches 30-50 μ m; Then by electron beam evaporation plating at pressure less than 1. 0 * 10
-5Under the Pa condition, the copper of 2 ~ 5 hours plating one deck 5-8nm on diamond-film-like of evaporation, electroplate the copper of 10-30 millimeters thick with copper-bath subsequently on copper; Again silicon chip is eroded, clean in HF solution at last, get described diamond-film-like-carbon/carbon-copper composite material.
The heat-radiating substrate that the present invention makes by composite material contacts with air, forms heat loss through convection, strengthens radiating effect.LED chip is crossed the weldering of elargol or metal eutectic and directly is connected with heat-radiating substrate, the heat of LED chip directly by copper coin and diamond-film-like to air radiation, heat-transfer path is just very short like this, heat transfer efficiency improves greatly.The upper and lower surface of copper coin can plate diamond-film-like, and reflector also can be made by copper, and the surface of reflector also can plate diamond-film-like, realizes like this portraitlandscape high efficiency and heat radiation simultaneously.Circuit layer can be directly done in diamond like carbon film insulation itself in the above, simplifies encapsulating structure.
Compared with prior art, the present invention with have following advantage and a technique effect
1) heat-radiating substrate of the present invention and reflector absorb the heat of chip simultaneously, and radiating effect is all arranged.
2) the present invention uses copper or diamond-film-like and carbon/carbon-copper composite material as the reflector of LED chip, and diamond-film-like is at the skin of reflector, and diamond-film-like is to the air radiation heat.
3) different shapes is made on copper coin of the present invention surface, and diamond-film-like is attached to the copper coin surface according to the shape of copper coin, has increased the contact area of diamond-film-like and air.
4) LED chip of the present invention directly is encapsulated on the heat-radiating substrate that diamond-film-like and carbon/carbon-copper composite material make, and this heat-radiating substrate need not be placed on other type heat-radiating substrate.
5) diamond is the highest material of thermal conductivity, and thermal conductivity can reach 2000W/m.K;The thermal conductivity of copper is 397W/m.K.Both heat is all high in the extreme to rate, and at the same plated with gold diamond film, the thickness of film can be regulated by the plasma reinforced chemical vapour deposition technology.Diamond-like is that film is the mixture of diamond lattic structure and graphite-structure in theory, so hot to not reaching adamantine level, more than still can reaching 900W/m.K, this is very high.The present invention is applied to diamond-film-like-carbon/carbon-copper composite material the heat radiation of LED chip, for the illuminating and heat radiating of LED provides a kind of new solution.On the basis of using diamond-film-like and copper composite radiating substrate, change the encapsulating structure of LED chip, provide optimizing design scheme from thermally conductive pathways and heating panel to air heat radiation equal angles, effectively solve great power LED because the brightness decline that a large amount of heating brings and the problem of the lost of life.
Description of drawings
The present invention is described in further detail below in conjunction with drawings and Examples.
Fig. 1 is the high power LED structure schematic diagram of the first embodiment.
Fig. 2 is the high power LED structure schematic diagram of the second embodiment.
Fig. 3 is the high power LED structure schematic diagram of the 3rd embodiment.
Fig. 4 is the high power LED structure schematic diagram of the 4th embodiment.
Fig. 5 is the high power LED structure schematic diagram of the 5th embodiment.
Fig. 6 is the high power LED structure schematic diagram of the 5th embodiment.
Fig. 7 a is the high power LED structure schematic diagram of the 6th embodiment.
Fig. 7 b comprises the vertical view of LED section in 7a.
In figure: 14) heat-radiating substrate; 1 diamond-film-like; 2 copper coins; 3 adhesive layers; 4 circuit layers; 5 crystal-bonding adhesives; The 6LED chip; 7 lead-in wires; 8 lens; 9 reflectors; 10 sealants; 141 fins; 41 circuit layers are near the electrode that is positioned at LED chip.
Embodiment
Consult Fig. 1 to shown in Figure 7, the present invention has provided the preferred embodiment of employing diamond-film-like-carbon/carbon-copper composite material as the high-power LED encapsulation structure of heat-radiating substrate, but embodiments of the present invention are not limited to this.
As shown in Figure 1: heat-radiating substrate 14 upper surfaces are copper 2, and lower surface copper 2 and diamond-film-like 1, diamond-film-like 1 are below copper coin 2, and upper and lower surface is all the plane.LED chip 6 directly is placed on heat-radiating substrate 14 by crystal-bonding adhesive 5.The top of LED chip 6 is lens 8, and the shape of lens 8 lens can change, according to the requirement of different rising angles.Lens 8 can be made by materials such as elastoplast, glass, resin, acrylics.Adhesive layer 3 and circuit layer 4 are arranged above heat-radiating substrate 14; Adhesive layer 3 and circuit layer 4 centers are all porose, and the position of the position in hole and LED chip 6 is corresponding.Here, adhesive layer 3 also can be insulating barrier.Adhesive layer 3 is high thermal conductance megohmite insulants, such as epoxy resin, has perhaps filled the viscose glue of carbon nano-fiber.Circuit layer 4 is supplied with LED chip 6 to extraneous electricity by lead-in wire 7.Need to prove: the copper coin here can be done different shapes, also respective change of the pattern of diamond-film-like so, and this can increase the area of film, strengthens radiating effect.
The manufacture method of heat-radiating substrate 14 is, allows hydrogen and methane reaction generate diamond-film-like by microwave resonance plasma reinforced chemical vapour deposition technology, and wherein the incident microwave is the TE10 mould, and the microwave system frequency is 1 ~ 2. 45GHz, and microwave power is 850 ~ 950W.Because the wettability of diamond-film-like and copper is bad, be difficult to grow continuous diamond like carbon film.We adopt (100) face silicon chip after polishing as substrate (substrate), first pass through successively acetone, alcohol, deionized water ultrasonic cleaning before using, and every kind of reagent cleaned 5 ~ 8 minutes, then dried up with nitrogen.Then regulating hydrogen flowing quantity is 10-50sccm, and methane flow is 5-50sccm.Substrate vacuum is (1.0 ~ 5. 0) * 10
-3Pa, the injection back bias voltage is 10 ~ 30KV, and pulse frequency is 100 ~ 300HZ, and pulsewidth is 10 ~ 20 μ s.In deposition process, substrate temperature remains on 300 ~ 500 ℃, and sedimentation time is 15 ~ 20 hours, and the diamond like carbon film thickness of deposition reaches 30-50 μ m.Then we by electron beam evaporation plating at pressure less than 1. 0 * 10
-5The copper of 2 ~ 5 hours plating one deck 5-8nm on diamond-film-like of evaporation under the Pa condition, we electroplate the copper of 10-30 millimeters thick with copper-bath on copper subsequently, and it is thicker that copper also can plate.Copper can be played a supporting role, and prevents that diamond-film-like is cracked.Be H with proportioning again
2SO
4: H
2O
2: H
2The solution of O=3:1:1 erodes silicon chip, at last (HF:H in HF solution
2O=1:19) clean 60s.So just obtained composite base plate, we can machining go out the heat-radiating substrate that we want afterwards.Here we also can just can obtain diamond-film-like 1 without electron beam evaporation plating and electroplating technology, and this diamond-film-like can be used for sticking on other highly heat-conductive material surface.
As shown in Figure 2: this structure and Fig. 1 are basic identical, and difference has been reflector 9 and sealant 10 many, and reflector 9 is positioned at circuit layer 4 tops, and reflector 9 has copper to make, and insulate between circuit layer 4 and reflector 9.Reflector 9 also can have other materials to make, such as metal alloy, and pottery, plastics.The surface area of reflector 9 can be smaller, and the radial section of the reflector in figure is long-pending very large.The inner surface of reflector 9 has the film of one deck high reflectance.Filling sealing agent 10 in cavity in reflector 9, sealant 10 is used silica gel usually, and silica gel has many good qualities, and its refractive index is large; Can flavescence; Keep gel.Sealant 10 also can mix with fluorescent material, plays the wavelength transformation, such as blue light being converted to gold-tinted, final synthesize white light.Sealant 10 the insides also can add light inlet and disperse medium, change the optical field distribution of emergent light.On the sealant upper cover, lens 8.
As shown in Figure 3: this structure and Fig. 2 are basic identical, difference be the below of crystal-bonding adhesive 5 many a fritter diamond-film-like 1, diamond-film-like 1 below is only copper coin.Heat-radiating substrate 1 shape matching herein is special, and its lower surface is covered by diamond-film-like fully, and the upper surface only place corresponding with LED chip 6 has the block size diamond-film-like suitable with LED chip 6, and this fritter diamond-film-like also can be larger certainly.
As shown in Figure 4: this structure and 3 basic identical, difference is that the below diamond-film-like 1 of crystal-bonding adhesive 5 has covered whole copper base 2, also can say, and the heat-radiating substrate 14 here is three-decker, and the up and down is two-layer is diamond-film-like 1, and middle one deck is copper coin 2.Difference is that also the circuit layer here is made on diamond-film-like, does not need extra insulating barrier.Because diamond-film-like 1 insulate, and the adhesive layer 3 in Fig. 3 is also insulating barrier.Between connecing, circuit layer 4 and diamond-film-like need not extra insulating barrier.
As shown in Figure 5: this structure and Fig. 4 are basic identical, and difference is to have plated one deck diamond-film-like 1 at the upper surface of reflector 9, and reflector 9 materials are copper.Here also can have another to select, namely the reflector material is the resin of high heat conduction, perhaps Al, W and alloy material, the material that the heat conduction such as AlN are good.At this moment, diamond-film-like sticks on upper surface.
As shown in Figure 6: this structure and Fig. 5 are basic identical, and the lower surface of heat-radiating substrate 14 processes fin 141, and fin is covered by diamond-film-like.Fin can be strengthened heat loss through convection, and the shape and size of fin can change.The heat that LED chip 6 produces is on the one hand by heat-radiating substrate and fin is arranged to air radiation, on the one hand by reflector to air radiation.And owing to being contacted with air by diamond-film-like, this will extract the heat in structure effectively.
As shown in Figure 7a: this structure and Fig. 5 are basic identical, and difference is to have placed a plurality of LED chips 6 in the cavity of reflector 9.The light that LED chip 6 can send out wavelength identical also can be sent out different wave length, not as red, green, blue three looks.Perhaps gold-tinted and blue light collocation.Have three places that diamond-film-like is arranged in this structure, the radiating effect at heat-radiating substrate and reflector place all strengthens greatly.
As shown in Figure 7b: LED chip 6 be positioned at LED chip 6 near circuit layer 4 on electrode 41 be connected.Arranging of a plurality of LED chips 6 can be adjusted with connected mode.Due to the high thermal conductance of loose heat-radiating substrate 14 and reflector 9, LED chip 6 can greater than 4, can be high-power chip simultaneously here.Heat-transfer path from LED chip 6 to air is followed successively by LED chip 6, crystal-bonding adhesive 5, diamond-film-like, copper, diamond-film-like.This path is very short, and the centre does not have the heat dissipation metal piece, also there is no other heating panel, and diamond-like is arranged for twice is that film occurs.Undoubtedly, whole process thermal resistance can reduce greatly.
Claims (8)
1. heat-radiating substrate is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material, comprise LED chip (6), lens (8) and reflector (9), LED chip (6) is arranged in reflector, lens (8) are positioned at above reflector, characterized by further comprising the heat-radiating substrate (14) that diamond-film-like-carbon/carbon-copper composite material is made; The lower surface of described heat-radiating substrate (14) directly contacts with air; LED chip (6) directly is placed in the upper surface of heat-radiating substrate (14) by crystal-bonding adhesive (5) or the weldering of metal eutectic; The lower surface of the heat-radiating substrate that described diamond-film-like-carbon/carbon-copper composite material is made (14) or lower surface and upper surface are diamond-film-like (1); The upper surface of heat-radiating substrate (14) is copper, and lower surface is diamond-film-like (1), and the upper surface of heat-radiating substrate (14) is bonded with circuit layer (4) by the adhesive layer (3) of insulation; Adhesive layer (3) and circuit layer (4) have the hole of passing for LED chip (6).
2. heat-radiating substrate is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material according to claim 1, it is characterized in that, also comprise circuit layer (4), the upper surface of heat-radiating substrate (14) and lower surface are diamond-film-like (1), and circuit layer (4) is directly arranged on upper surface diamond-film-like (1); Circuit layer (4) has the hole of passing for LED chip (6), and reflector is positioned on circuit layer.
3. heat-radiating substrate is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material according to claim 1, it is characterized in that, the lower surface of heat-radiating substrate (14) is diamond-film-like (1), it is diamond-film-like (1) that upper surface is settled the place of LED chip (6), other places of upper surface are copper, and the upper surface of heat-radiating substrate (14) is bonded with circuit layer (4) by the adhesive layer (3) of insulation; Adhesive layer (3) and circuit layer (4) have the hole of passing for LED chip (6).
4. heat-radiating substrate is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material according to claim 1, it is characterized in that, heat-radiating substrate (14) lower surface is processed into radiating fin (141), and radiating fin (141) is diamond-film-like-carbon/carbon-copper composite material; Reflector (9) is copper or copper and diamond like carbon film composite material.
5. heat-radiating substrate is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material according to claim 1, it is characterized in that, is filled with the sealant (10) of the lead-in wire (7) that covers LED chip (6) and LED chip in reflector (9).
6. heat-radiating substrate is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material according to claim 5, it is characterized in that, described sealant is mixed with fluorescent material in (10).
7. according to claim 1 ~ 6 described heat-radiating substrates of any one are the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material, it is characterized in that, described LED chip (6) has a plurality of, and are arranged in reflector (9).
8. heat-radiating substrate is the large-power light-emitting diodes of diamond-film-like-carbon/carbon-copper composite material according to claim 7, it is characterized in that, making by the following method of described diamond-film-like-carbon/carbon-copper composite material: allow hydrogen and methane reaction generate diamond-film-like by microwave resonance plasma reinforced chemical vapour deposition technology, wherein the incident microwave is the TE10 mould, microwave frequency is 1 ~ 2. 45GHz, and microwave power is 850 ~ 950W; (100) face silicon chip after the employing polishing first passes through acetone, alcohol, deionized water ultrasonic cleaning successively as substrate, and every kind of reagent cleaned 5 ~ 8 minutes, then dried up with nitrogen; The adjusting hydrogen flowing quantity is 10-50sccm, and methane flow is 5-50sccm, and substrate vacuum is (1.0 ~ 5. 0) * 10-3Pa, and the injection back bias voltage is 10 ~ 30KV, and pulse frequency is 100 ~ 300HZ, and pulsewidth is 10 ~ 20 μ s; In deposition process, substrate temperature remains on 300 ~ 500 ℃, and sedimentation time is 15 ~ 20 hours, and the diamond like carbon film thickness of deposition reaches 30-50 μ m; Then by electron beam evaporation plating pressure less than 1. 0 * 10-5Pa condition under the copper of evaporation 2 ~ 5 hours plating one deck 5-8nm on diamond-film-like, electroplate the copper of 10-30 millimeters thick with copper-bath on copper subsequently; Again silicon chip is eroded, clean in HF solution at last, get described diamond-film-like-carbon/carbon-copper composite material.
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| CN105375669A (en) * | 2015-12-07 | 2016-03-02 | 天津博威动力设备有限公司 | Generator housing material facilitating heat dissipation |
| CN106338011A (en) * | 2016-08-31 | 2017-01-18 | 长兴友畅电子有限公司 | LED with heat and electricity separation |
| CN107658375B (en) * | 2017-08-21 | 2022-04-22 | 山东鼎拓电子科技有限公司 | Production process and structure of basalt LED bracket |
| CN114647114B (en) * | 2022-03-22 | 2023-10-17 | Tcl华星光电技术有限公司 | Backlight module and display device |
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|---|---|---|---|---|
| CN101728366A (en) * | 2008-10-22 | 2010-06-09 | 先进开发光电股份有限公司 | Encapsulating module of photoelectric element and manufacturing method thereof |
| CN102185527A (en) * | 2011-05-10 | 2011-09-14 | 天津理工大学 | Wiring device of solar photovoltaic component with extending function |
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| CN101728366A (en) * | 2008-10-22 | 2010-06-09 | 先进开发光电股份有限公司 | Encapsulating module of photoelectric element and manufacturing method thereof |
| CN102185527A (en) * | 2011-05-10 | 2011-09-14 | 天津理工大学 | Wiring device of solar photovoltaic component with extending function |
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