CN102237165A - Manufacturing method of 50 ohm TaN film resistor combined with MMIC process - Google Patents
Manufacturing method of 50 ohm TaN film resistor combined with MMIC process Download PDFInfo
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- CN102237165A CN102237165A CN 201010162229 CN201010162229A CN102237165A CN 102237165 A CN102237165 A CN 102237165A CN 201010162229 CN201010162229 CN 201010162229 CN 201010162229 A CN201010162229 A CN 201010162229A CN 102237165 A CN102237165 A CN 102237165A
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000008569 process Effects 0.000 title abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 52
- 238000000137 annealing Methods 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 73
- 239000000463 material Substances 0.000 description 16
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 11
- 229910001120 nichrome Inorganic materials 0.000 description 11
- 238000005036 potential barrier Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000008485 antagonism Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Abstract
The invention discloses a manufacturing method of a 50 ohm TaN film resistor combined with an MMIC process, which comprises the following steps: step 10: plasma enhanced chemical vapor deposition PECVD thickness on SiC substrate
Si of (2)3N4An isolation medium; step 20: in Si3N4Photoresist is spin-coated on the isolation medium, and a TaN film resistor pattern is formed through photoetching and developing; step 30: adopting gases Ar and N with a certain proportion in the pre-sputtering and the formal sputtering2Sputtering Ta metal to obtain TaN film resistor; step 40: and stripping the TaN film resistor on the photoresist to obtain the TaN film resistor on the required pattern. The TaN film resistor manufactured by the invention has good physical and chemical stability, small temperature coefficient, high reliability and good compatibility with MMIC process.
Description
Technical field
The present invention relates to technical field of integrated circuits, relate in particular to a kind of manufacture method of in the MMIC of GaN HEMT technology, making 50 ohm of TaN film resistors.
Background technology
Generally in order to combine with MMIC technology, need to adopt thin-film technique, thin-film technique thickness is about between 0.01 μ m～1 μ m.In order in the thin-film technique of MMIC, to form elements such as resistance, electric capacity, inductance simultaneously, need different technology and the materials of utilization to make, technological temperature generally all can be controlled at below 400 ℃ simultaneously, for 800～900 ℃ of the required sintering temperatures of ceramic technology, the thin-film technique stability is higher, in the process of carrying out the technology combination, only note the compatibility of material between the different elements, can reach the global design of technology, passive component and active element are combined to reach the demand of circuit multifunction.
In MMIC technology, generally select for use TaN and NiCr etc. to be applicable to the material metal thin film resistor of microwave frequency band, their volumes are little, precision is high, noise is low, temperature coefficient is little, reliability is high but cost is higher relatively.Wherein the TaN stability of material is higher, the scope of side's resistance is more bigger than NiCr, hardness is good, temperature coefficient is low, the corrosion problems that exists when moisture being arranged with respect to NiCr, the TaN material can be effectively moistureproof, is a kind of resistance material that can have long-time stability and accuracy in the environment of high temperature, humidity.Processing steps such as many etchings or chloride participation are arranged in the MMIC of GaN material technology, and the TaN film resistor shows very strong stability with respect to oxidation and chlorination, is more suitable for the MMIC technological process of GaN material and device.
The accuracy of film resistor quality and resistance has a significant impact the stability of MMIC circuit.Some resistance is to be used in the stabilizing network of entire circuit, resistance for these resistance requires very accurate, so need the resistance material of high stability, and the resistor satisfied MMIC circuit resistance scope commonly used that needs design, also needing has good compatibility with the MMIC technology of GaN, so take all factors into consideration various factors, can combine with the application of GaN material at present, and the preferred materials of being satisfied with MMIC process film resistance is TaN, and therefore the making of the 50 ohm of TaN film resistors of standard that combine with MMIC technology is very crucial.
Summary of the invention
(1) technical problem that will solve
The present invention is the accuracy for stability that improves film resistor and resistance, simultaneously also for the process compatible of MMIC, a kind of manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology is provided.
(2) technical scheme
For achieving the above object, the invention provides a kind of manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology, this method comprises:
Step 10: plasma enhanced chemical vapor deposition PECVD thickness is on the SiC substrate
Si
3N
4Spacer medium;
Step 20: at Si
3N
4Spin coating photoresist on the spacer medium, and by photoetching, development formation TaN film resistor pattern;
Step 30: when pre-sputter and formal sputtering, adopt proportion of gas Ar and N
2, the Ta of sputter simultaneously metal obtains the TaN film resistor;
Step 40: the TaN film resistor on the photoresist is peeled off, obtained the TaN film resistor on the required figure.
In the such scheme, Ar of gas described in the step 30 and N
2Ratio be: volume ratio Ar: N
2=16: 5.2.
In the such scheme, sputtering time described in the step 30 is 255 seconds, and the thickness that obtains resistance is
In the such scheme, this method also comprises after step 40: adopt independent annealing process step that the TaN film resistor is annealed; Perhaps in conjunction with secondary media Si in the MMIC technology
3N
4Formation, simultaneously the TaN film resistor is annealed.
In the such scheme, the independent annealing process step of described employing is annealed to the TaN film resistor, and annealing temperature is 400 ℃, and annealing time is 3 minutes.
In the such scheme, described in conjunction with secondary media Si in the MMIC technology
3N
4Formation, simultaneously the TaN film resistor is annealed, be in conjunction with the PECVD secondary media Si in the MMIC technology
3N
4Deposit, temperature is about 280 ℃, simultaneously the TaN film resistor is annealed.
(3) beneficial effect
In microwave circuit, often can use resistive element, the accuracy of resistance and stability have a significant impact circuit, and this just proposes very high requirement to the quality of resistance.The TaN material is very stable in the environment of high temperature, humidity, and have good physics and chemical stability, power dissipation density and noise are low, and in thin-film technique can with the MMIC process compatible, so can well guarantee the performance and the stability of circuit, the TaN film resistor quality that the present invention adopts sputtering technology to obtain is good, and the stability and the linearity of annealed back resistance are higher, are suitable for the use of the resistive element in microwave circuit.
Description of drawings
Fig. 1 is the manufacture method flow chart of 50 ohm of TaN film resistors that combine with MMIC technology provided by the invention;
TaN film resistor the structural representation in MMIC technology of Fig. 2 for adopting 50 ohm of TaN film resistor manufacture methods that combine with MMIC technology provided by the invention to make;
Fig. 3 be in the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology provided by the invention annealing process to the comparison diagram that influences of resistance;
Fig. 4 is that the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology provided by the invention is in conjunction with deposit secondary media Si in the MMIC technology
3N
4, the resistance measurement curve that the TaN film resistor is annealed simultaneously.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the manufacture method flow chart of 50 ohm of TaN film resistors that combine with MMIC technology provided by the invention, and this method comprises:
Step 10: plasma enhanced chemical vapor deposition PECVD thickness is on the SiC substrate
Si
3N
4Spacer medium;
Step 20: at Si
3N
4Spin coating photoresist on the spacer medium, and by photoetching, development formation TaN film resistor pattern;
Step 30: when pre-sputter and formal sputtering, adopt proportion of gas Ar and N
2, the Ta of sputter simultaneously metal obtains the TaN film resistor;
Step 40: the TaN film resistor on the photoresist is peeled off, obtained the TaN film resistor on the required figure.
Wherein, Ar of gas described in the step 30 and N
2Ratio be: volume ratio Ar: N
2=16: 5.2.Described sputtering time is 255 seconds, and the thickness that obtains resistance is
This method also comprises after step 40: adopt independent annealing process step that the TaN film resistor is annealed; Perhaps in conjunction with secondary media Si in the MMIC technology
3N
4Formation, simultaneously the TaN film resistor is annealed.
Wherein, the independent annealing process step of described employing is annealed to the TaN film resistor, and annealing temperature is 400 ℃, and annealing time is 3 minutes.Described in conjunction with secondary media Si in the MMIC technology
3N
4Formation, simultaneously the TaN film resistor is annealed, be in conjunction with the PECVD secondary media Si in the MMIC technology
3N
4Deposit, temperature is about 280 ℃, simultaneously the TaN film resistor is annealed.
TaN film resistor the structural representation in MMIC technology of Fig. 2 for adopting 50 ohm of TaN film resistor manufacture methods that combine with MMIC technology provided by the invention to make.The dielectric Si that on the SiC substrate, needs deposit one deck to isolate
3N
4, concrete processing step combines with MMIC technology, can reduce dielectric loss like this, makes resistance and insulated substrate, gives full play to its performance.Adopt Ar: N
2=16: 5.2 gas ratio, note keeping when at this moment needing to remain on pre-sputter and formal sputtering this same gas ratio, can keep the compactness of TaN film of institute's sputter and the continuity of whole process like this, if when sputter is with formal sputtering in advance, do not adopt identical ratio, can make that then the cavity internal gas pressure changes, influential to film quality.Sputter Ta metal meanwhile like this will be at Si
3N
4On obtain the TaN film resistor, last at the two ends of resistance connecting wiring metal, the PAD that finishes resistance by the wiring layer metal connects and the electrical communication characteristic.
Fig. 3 be in the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology provided by the invention annealing process to the comparison diagram that influences of resistance.As can be seen from Figure, after the sputter of TaN film resistor was finished, if do not anneal, can there be potential barrier in resistance, and resistance just shows characteristic of nonlinear like this, can not normal use; If anneal separately, need carry out high annealing immediately, annealing separately if desired as can be seen from following table 1 needs 400 ℃, and effect was better in 3 minutes.But owing to can combine secondary media Si with the MMIC technology of GaN material in the back
3N
4Temperature during deposit is 280 ℃, the time about 20 minutes, through experiment measuring, eliminated potential barrier substantially, and make TaN become linear resistance, and effect is also all well and good.So after the sputter of TaN film resistor is finished, need carry out high annealing, can eliminate potential barrier like this and make that resistance can normal use.
Fig. 4 is that the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology provided by the invention is in conjunction with deposit secondary media Si in the MMIC technology
3N
4, the resistance measurement curve that the TaN film resistor is annealed is not to adopt independent annealing process that the TaN film resistor is annealed simultaneously, but at secondary media Si
3N
4Utilize its temperature of 280 ℃ in the time of deposit, annealed in 20 minutes, find that effect also is good, 50 ohm resistance as can be seen from Figure, by measuring actual is 48.32 ohm, and precision is fine, and has also eliminated potential barrier simultaneously, the annealing of TaN film resistor makes that the linearity of resistance is also fine, so also can well combine with MMIC technology as can be seen.
| Measurement data before the annealing | Contact resistance (Ohm) | Square resistance (Ohm) |
| 1 | 15.77 | 43.42 |
| 2 | 13.316 | 44.036 |
| 3 | 12.025 | 45.263 |
| Measurement data behind the annealing 3min | Contact resistance (Ohm) | Square resistance (Ohm) |
| 1 | 3.089 | 49.548 |
| 2 | 3.7197 | 48.534 |
| 3 | 3.89 | 49.967 |
| Measurement data behind the annealing 5min | Contact resistance (Ohm) | Square resistance (Ohm) |
| 1 | 4.8 | 52.27 |
| 2 | 4.98 | 54 |
| 3 | 4.69 | 56.23 |
| Measurement data behind the annealing 10min | Contact resistance (Ohm) | Square resistance (Ohm) |
| 1 | 9.47 | 57.53 |
| 2 | 6.85 | 61.06 |
| 3 | 7.62 | 60.24 |
Table 1
Table 1 is the influence relation of annealing time in the manufacture method of a kind of 50 ohm of TaN film resistors that combine with MMIC technology of the present invention to the square resistance and the contact resistance of TaN film resistor, with the data declaration of 3 groups of different annealing times 400 ℃ the time annealing time square resistance of TaN film resistor and the influence of contact resistance are concerned.Square resistance increases along with the increase of annealing time as can be seen, contact resistance also increases along with the increase of annealing time, so the selection of the annealing time an of the best is arranged, in the time of 400 ℃, the Best Times of annealing is 3 minutes, the TaN film resistor manufacturing conditions of this moment makes square resistance just about 50 ohm, and contact resistance also in 4 ohm, has reached the number range requirement of MMIC technology to resistance.Illustrate and in the time of 400 ℃, to anneal 3 minutes when separately the TaN film resistor being carried out the annealing process step if desired.
Table 2
Table 2 for TaN film resistor in the manufacture method of a kind of 50 ohm of TaN film resistors that combine with MMIC technology of the present invention and NiCr film resistor under different annealing temperature, the stability under oxygen gas plasma exposes contrasts.The resistance of TaN film resistor is along with the thickness linear change, and the big more resistance of thickness is more little, and TaN film resistor thickness is along with sputtering time also is a linear change, so the resistance of resistance and sputtering time are inversely proportional to simultaneously.Here the TaN film resistor and the NiCr film resistor that have provided 30 ohm compare, and have provided them at O
2Square resistance R before and after the plasma exposure
With contact resistance R
cThe change in resistance situation, the square resistance that TaN is described exposes (O just at oxygen plasma
2Build-up of luminance) has good stability under the situation.The TaN film resistor is the 1030 Izod right sides herein, be 30 Ohmic resistances, the NiCr film resistor is the 252 Izod right sides, be 30 Ohmic resistances, before annealing, potential barrier is arranged all, under different annealing temperatures, can both eliminate potential barrier substantially, but square resistance is different with contact resistance value, needs to select suitable temperature and time to anneal.TaN and NiCr can anneal 3 minutes in the time of 400 ℃ as can be seen, make resistance accurate, and contact resistance were also very little.The TaN film resistor is at 200 ℃, and 250 ℃, square resistance is all smaller in the time of 300 ℃, and contact resistance is all bigger, but at O
2As can be seen, square resistance diminishes a little before and after the plasma exposure, but changes not quite, and it is big that contact resistance becomes, but do not have too big variation in the time of 400 ℃ substantially; The NiCr film resistor is at 200 ℃, 250 ℃, square resistance is all very big in the time of 300 ℃, contact resistance is bigger, owing to still have very little potential barrier when annealing temperature is low, square resistance is more a lot of than 30 ohm big, but it is normal substantially when 300 ℃ and 400 ℃, the change in resistance of square resistance and contact resistance is bigger than TaN, especially temperature during low annealing the stability of NiCr resistance obviously bad, so as can be seen the TaN material at O
2Under stability be greater than NiCr, simultaneously find out that also the temperature stability of TaN film resistor is higher.
Utilize characteristics such as the tantalum-nitride material temperature coefficient is little, stable height to make thin film resistor element, can combine with MMIC technology commonly used now, especially can good compatibility be arranged with the MMIC technology of III-V family material, be usually used in making the resistive element in the circuit, the stability of resistance under the accuracy of resistance and the adverse circumstances can well be guaranteed, the stability of circuit and the microwave property of circuit can be improved like this.
The TaN film resistor is more stable than NiCr resistance resistance, and resistance to chemical corrosion and heat resistance are better.By the TaN film resistor is annealed in air or oxygen; can be so that the resistance of square resistance be more accurate; contact resistance reduces; can form tantalum pentoxide on the surface of TaN film resistor simultaneously; oxide layer antagonism moisture and other adverse circumstances of forming are very favourable; the TaN film resistor has good corrosion resistance in gaseous environments such as oxygen and chlorine, and can resist radiation, well protects the resistance stability of TaN film resistor.
A kind of 50 ohm of TaN film resistor manufacture methods that combine with MMIC technology of the present invention, provided a kind of method of the TaN of making film resistor, what provide is the making of 50 ohm of standard resistors herein, but can be inversely proportional to according to the thickness of resistance and resistance and calculate the sputter thickness of its other party resistance, and then adjustment sputtering time, obtain the manufacture craft condition of other square resistance numerical value, simultaneously can obtain resistance value commonly used in the circuit design according to 50 ohm square resistance, the TaN film resistor has satisfied MMIC circuit design resistance range commonly used substantially.The annealing steps of TaN film resistor can carry out separately, also can be combined in sputter secondary media Si in the MMIC technology
3N
4Situation under carry out, through experimental verification, can obtain high-quality resistance.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology is characterized in that, this method comprises:
Step 10: plasma enhanced chemical vapor deposition PECVD thickness is on the SiC substrate
Si
3N
4Spacer medium;
Step 20: at Si
3N
4Spin coating photoresist on the spacer medium, and by photoetching, development formation TaN film resistor pattern;
Step 30: when pre-sputter and formal sputtering, adopt proportion of gas Ar and N
2, the Ta of sputter simultaneously metal obtains the TaN film resistor;
Step 40: the TaN film resistor on the photoresist is peeled off, obtained the TaN film resistor on the required figure.
2. the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology according to claim 1 is characterized in that, Ar of gas described in the step 30 and N
2Ratio be: volume ratio Ar: N
2=16: 5.2.
3. the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology according to claim 1 is characterized in that sputtering time described in the step 30 is 255 seconds, and the thickness that obtains resistance is
4. the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology according to claim 1 is characterized in that, this method also comprises after step 40:
Adopt independent annealing process step that the TaN film resistor is annealed; Perhaps in conjunction with secondary media Si in the MMIC technology
3N
4Formation, simultaneously the TaN film resistor is annealed.
5. the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology according to claim 4 is characterized in that, the independent annealing process step of described employing is annealed to the TaN film resistor, and annealing temperature is 400 ℃, and annealing time is 3 minutes.
6. the manufacture method of 50 ohm of TaN film resistors that combine with MMIC technology according to claim 4 is characterized in that, and is described in conjunction with secondary media Si in the MMIC technology
3N
4Formation, simultaneously the TaN film resistor is annealed, be in conjunction with the PECVD secondary media Si in the MMIC technology
3N
4Deposit, temperature is about 280 ℃, simultaneously the TaN film resistor is annealed.
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Cited By (6)
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|---|---|---|---|---|
| CN105547535A (en) * | 2015-12-11 | 2016-05-04 | 中国电子科技集团公司第四十八研究所 | Strain thin film for thin film pressure sensor, preparation method of strain thin film, thin film pressure sensor core |
| CN106057785A (en) * | 2016-05-18 | 2016-10-26 | 中国电子科技集团公司第四十研究所 | Method of integrating two TaN interconnect film resistors of different sheet resistances on same plane of dielectric substrate |
| CN108417643A (en) * | 2018-03-29 | 2018-08-17 | 成都海威华芯科技有限公司 | A kind of temperature-compensating film resistor and preparation method thereof |
| CN108598259A (en) * | 2018-04-09 | 2018-09-28 | 上海集成电路研发中心有限公司 | A kind of preparation method of film resistor |
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| CN105547535B (en) * | 2015-12-11 | 2019-01-01 | 中国电子科技集团公司第四十八研究所 | Strain film for diaphragm pressure sensor and preparation method thereof, diaphragm pressure sensor core |
| CN106057785A (en) * | 2016-05-18 | 2016-10-26 | 中国电子科技集团公司第四十研究所 | Method of integrating two TaN interconnect film resistors of different sheet resistances on same plane of dielectric substrate |
| CN106057785B (en) * | 2016-05-18 | 2018-08-14 | 中国电子科技集团公司第四十一研究所 | The method that two kinds of sheet resistance interconnection film resistors of TaN materials are integrated on the same plane of dielectric substrate |
| CN108417643A (en) * | 2018-03-29 | 2018-08-17 | 成都海威华芯科技有限公司 | A kind of temperature-compensating film resistor and preparation method thereof |
| CN108598259A (en) * | 2018-04-09 | 2018-09-28 | 上海集成电路研发中心有限公司 | A kind of preparation method of film resistor |
| US12142808B2 (en) | 2019-03-18 | 2024-11-12 | Teknologian Tutkimuskeskus Vtt Oy | Wilkinson divider |
| CN110706874A (en) * | 2019-10-21 | 2020-01-17 | 中北大学 | Preparation method of high-reliability attenuation resistor |
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Application publication date: 20111109 |