CN101778534A - Photoelectric mixed circuit board and manufacturing method thereof - Google Patents
Photoelectric mixed circuit board and manufacturing method thereof Download PDFInfo
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- CN101778534A CN101778534A CN200910002252A CN200910002252A CN101778534A CN 101778534 A CN101778534 A CN 101778534A CN 200910002252 A CN200910002252 A CN 200910002252A CN 200910002252 A CN200910002252 A CN 200910002252A CN 101778534 A CN101778534 A CN 101778534A
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Abstract
The invention discloses a photoelectric mixed circuit board and a manufacturing method thereof. The method of the invention comprises the following steps of: providing a temporary baseplate of a non-semiconductor; forming an optical waveguide structure on the temporary baseplate, wherein a first side and a second side opposite to the first side are defined in the optical waveguide structure; removing the temporary baseplate; respectively forming a first conductor covering dielectric layer and a second conductor covering dielectric layer at the first side and the second side of the optical waveguide structure; forming a coupled opening which is penetrated through the first conductor covering dielectric layer and exposed outside the optical waveguide structure; forming a groove which is penetrated through the second conductor covering dielectric layer and the optical waveguide structure to enable the optical waveguide structure to be provided with a slope; and forming a photoelectric element on the first conductor covering dielectric layer, wherein the photoelectric element corresponds to the coupled opening, and the slope is used for making an optical signal to generate refraction so as to travel to and fro among the photoelectric element, the coupled opening and the optical waveguide structure.
Description
Technical field
The present invention is about a kind of printed circuit board (PCB), especially about a kind of printed circuit board (PCB) with fiber waveguide (optic waveguide) structure.
Background technology
Optical communication is except long distance and the application of local networking, and the demand of short distance optical communication also increases gradually.Photoelectric mixed circuit board is used in the design of short distance optical communication always.So-called photoelectric mixed circuit board is exactly a kind of wiring board that elements such as fiber waveguide, photoelectricity is initiatively passive is integrated into printed circuit board (PCB).Because light transmission speed can be several times as much as the electrical information transmission, so the signal of telecommunication transmission speed of utilizing photoelectric mixed circuit board to be expected to be solved in the traditional circuit-board is too late in the problem of microprocessor.
The technology of known photoelectric mixed circuit board mostly is to form optical waveguide structure earlier.For example, can be earlier with silicon dioxide as substrate, on substrate, utilize chemical vapour deposition technique and reactive ion etching to carry out the coating layer of fiber waveguide and the making of core layer with suitable semiconductor material.And then with this optical waveguide structure and other photoelectricity is active, passive component etc. is inserted on the external circuit.This known optical waveguide structure all contains the semiconductor substrate of growth optical waveguide structure usually, and shared volume is more, so the size of final electronic product will be restricted.Moreover the size of semiconductor substrate is only about usually 6 to 12 inches at present, and the fiber waveguide that can make or the structure of photoelectric mixed circuit board reach with quantity and also be restricted thus.Therefore, needs more can be saved the space, the more resilient practice solves known problem.
Summary of the invention
The invention provides a kind of method of integrating printed circuit board technology and fiber waveguide technology.One of characteristic of this method is to provide temporary substrate, this temporary substrate non-semiconductor substrate.Then, directly on temporary substrate, progressively set up optical waveguide structure; Afterwards temporary substrate is removed; The external circuit that utilizes printed circuit board technology to form other again is connected with optical waveguide structure.Owing to use the temporary substrate of non-semiconductor,, and then can make large-area fiber waveguide or photoelectric mixed circuit board structure so the technology of optical waveguide structure will can not be subjected to the restriction of the size of semiconductor substrate.
The present invention comprises the temporary substrate that non-semiconductor is provided in providing a kind of photoelectric mixed circuit board manufacture method on the one hand; Form optical waveguide structure on temporary substrate, optical waveguide structure defines second side of first side and relative first side; Remove temporary substrate; Forming first respectively at first side of optical waveguide structure and second side covers conductor dielectric layer and second and covers the conductor dielectric layer; Forming coupling opening penetrates first and covers the conductor dielectric layer and expose optical waveguide structure; The formation groove penetrates second and covers conductor dielectric layer and optical waveguide structure, so that optical waveguide structure has the inclined-plane; And form photoelectric cell and cover on the conductor dielectric layer in first, the corresponding coupling opening of photoelectric cell, wherein the inclined-plane be used to make returned since the light signal generating refraction navigate on photoelectric cell, coupling opening, and optical waveguide structure between.
The present invention comprises optical waveguide structure in a kind of photoelectric mixed circuit board on the other hand, and this optical waveguide structure preferably has the section greater than the maximum section of semiconductor wafer, and optical waveguide structure defines second side of first side and relative first side; First covers conductor dielectric layer and second covers conductor dielectric layer first side and second side of position optical waveguide structure respectively; Coupling opening penetrates first and covers the conductor dielectric layer and expose optical waveguide structure; Groove penetrates second and covers conductor dielectric layer and optical waveguide structure; And photoelectric cell covers on the conductor dielectric layer in first, the corresponding coupling opening of photoelectric cell, wherein ditch slot definition inclined-plane is in optical waveguide structure, the inclined-plane be used to make returned since the light signal generating refraction navigate on photoelectric cell, coupling opening, and optical waveguide structure between.
Description of drawings
Fig. 1 to Figure 12 shows the manufacture process of the photoelectric mixed circuit board of a preferred embodiment of the present invention with profile.
[main element symbol description]
10 temporary substrates, 11 release layers
12 patterning photoresist layers, 20 projection
31 times coating layers of 30 optical waveguide structures
Coating layer on 32 core layers 33
The 30a first side 30b second side
51 first dielectric layers, 52 second dielectric layers
53 first conductor layers, 53 ' the first patterned conductor layer
54 second conductor layers, 54 ' second patterning conductor layer
55 first cover conductor dielectric layer 56 second covers the conductor dielectric layer
61 the 3rd dielectric layers 62 the 3rd conductor layer
62 ' the 3rd patterning conductor layer 63 the 3rd is covered the conductor dielectric layer
81 first insulating barriers, 82 second insulating barriers
83a conductive junction point 83b conductive junction point
84a conductive junction point 84b conductive junction point
85 coupling opening, 86 coupling opening
91 grooves, 92 grooves
94 inclined-planes, 93 inclined-planes
101 viscose glues, 102 first dielectric layers
103 ' first patterning conductor layer
104 the 4th cover conductor dielectric layer 105 conduction through holes
111 breach, 112 breach
114 photovoltaic diodes, 115 light-emitting diodes
121 grooves
Embodiment
Below with reference to the preferred embodiments of the present invention of demonstrating in the accompanying drawing.Similar components adopts the components identical symbol in the accompanying drawing.Should note presenting the present invention for clear, each element in the accompanying drawing is not the scale according to material object, and for avoiding fuzzy content of the present invention, below known spare part, associated materials and correlation processing technique thereof are also omitted in explanation.
Fig. 1 to Figure 12 shows the manufacture process of the photoelectric mixed circuit board of a preferred embodiment of the present invention with profile.With reference to figure 1, provide the temporary substrate 10 of non-semiconductor substrate; Form release layer 11 on temporary substrate 10; And form patterning photoresist layer 12 on release layer 11.In this embodiment, temporary substrate 10 can be the electric conducting material of any non-semiconductor substrate to be formed, and for example can be any substrate of any section size greater than semiconductor wafer, such as steel plate or copper coin, and thickness can optionally change arbitrarily.Form release layer 11 and can utilize known technology, for example electroplate, can use nickel, copper or any other suitable electric conducting material.The formation of patterning photoresist layer 12 can utilize technology such as well known photolithography, impression or half tone, and thickness can optionally change arbitrarily.
With reference to figure 2, be mask with patterning photoresist shown in Figure 1 12, form projections 20 on release layer 11 by plating or other suitable methods, again patterning photoresist 12 is removed.The material of projection 20 can be nickel, copper or any other suitable electric conducting material, and thickness is also unrestricted.Projection 20 be in the technology to mutatis mutandis mark.
With reference to figure 3, it openly forms the step of optical waveguide structure 30.In detail, the step that forms optical waveguide structure 30 is that coating layer 31 is on release layer 11 under forming, and following coating layer 31 covers projections 20; Form core layer 32 on following coating layer 31; And form to go up coating layer 33 on coating layer 31 down, and last coating layer 33 covers core layers 32, wherein descend coating layer 31, and coating layer 31 was promptly formed optical waveguide structure 30 under core layer 32 reached.Following coating layer 31 or the material of going up coating layer 33 can be the macromolecular material of any suitable not extinction, for example epoxy resin, methacrylate (PMMA), poly cyclene resin, pi etc., the known coating process that its formation method available printed circuit board is already commonly used, the preferred technologies such as the vapour deposition process that is different from semiconductor technology and reactive ion etching of using.The thickness of following coating layer 31 and last coating layer 33 is preferably between 5 to 100 μ m.The material selection of core layer 32 can with the materials similar of following coating layer 31, only should notice that the refractive index of core layer 32 must be greater than coating layer 31 and last coating layer 33 down, to reach the function of light signal total reflection.The thickness of core layer 32 is preferably between 5 to 100 μ m.Being produced on of core layer 32 forms down after the coating layer 31 and forms and go up before the coating layer 33.The making that forms optical waveguide structure 30 can be adopted.It should be noted that in this embodiment owing to use the electric conducting material of non-semiconductor substrate to make optical waveguide structure 30 as temporary substrate 10, optical waveguide structure 30 can have the section greater than the maximum section of general semiconductor wafer.
With reference to figure 4, after optical waveguide structure 30 is finished, peel off temporary substrate 10 with known method and also can optionally release layer 11 etchings be removed.Projection 20 is embedded in the optical waveguide structure 30.For ease of explanation, optical waveguide structure 30 can there be the one side of projection of being embedded 20 be defined as the first side 30a, then be defined as the second side 30b with respect to the another side of the first side 30a.Subsequent technique will carry out on the first side 30a and the second side 30b respectively.
With reference to figure 5, go up respectively at the first side 30a of optical waveguide structure 30 and the second side 30b and to form first and cover conductor dielectric layer 55 and second and cover conductor dielectric layer 56.What is called is covered the conductor dielectric layer and is referred generally to the conductor layer composite material folded mutually with dielectric layer, can simultaneously be used to make circuit; Another side is used for electric isolated.In this embodiment, first covers conductor dielectric layer 55 and comprises first dielectric layer 51 and first conductor layer 53; Second covers conductor dielectric layer 56 comprises second dielectric layer 52 and second conductor layer 54, its materials used is preferably integrated soft resin coated copper foil (Flexible Resin Coated Copper Foils), but also can use resin film and Copper Foil additionally to carry out pressing to form respectively.At this embodiment, first covers conductor dielectric layer 55 and second, and to cover conductor dielectric layer 56 are making again after temporary substrate 10 and release layer 11 removed.In another embodiment, can cover on the second side 30b that conductor dielectric layer 56 is formed at optical waveguide structure 30 earlier second; Remove temporary substrate 10 and release layer 11 again; And then cover on the first side 30a that conductor dielectric layer 55 is formed at optical waveguide structure 30 first.
With reference to figure 6, can optionally utilize the well known photolithography technology with first conductor layer, 53 patternings, to form first patterning conductor layer 53 '.And, can optionally form the 3rd again and cover conductor dielectric layer 63 and cover on the conductor dielectric layer 55 in first.The 3rd covers conductor dielectric layer 63 comprises the 3rd dielectric layer 61 and the 3rd conductor layer 62, its materials used is preferably soft resin coated copper foil (Flexible Resin Coated CopperFoils), but also can use resin film and Copper Foil additionally to carry out pressing to form respectively.It should be noted that it is optionally that conductor dielectric layer 63 is covered in formation the 3rd.The present invention also comprises the embodiment that tool the 3rd not covers conductor dielectric layer 63.
With reference to figure 7, can optionally utilize the well known photolithography technology with the 3rd conductor layer 62 patternings, to form the 3rd patterning conductor layer 62 '.Similarly, second conductor layer 54 also can further be patterned to second patterning conductor layer 54 '.
Fig. 8 shows making first insulating barrier 81, second insulating barrier 82 and coupling opening 85 and 86.As shown in Figure 8, can utilize known photoetching process, or other suitable technique such as screen printing form first insulating barrier 81 and second insulating barrier 82 respectively on the 3rd patterning conductor layer 62 ' and second patterning conductor layer 54 '.First insulating barrier 81 and second insulating barrier 82 optionally are pattern structure, as shown in FIG., first insulating barrier 81 covers the 3rd patterning conductor layer 62 ' of a part and exposes conductive junction point 83a, 83b, 84a and 84b, is used for follow-uply joining with photoelectric cell.The material of insulating barrier can be general resin, and is preferred with soft.Then, can form coupling opening 85 and 86 respectively between conductive junction point 83a and the 83b and between conductive junction point 84a and the 84b, penetrate the 3rd and cover conductor dielectric layer 63 and first and cover conductor dielectric layer 55 with the optical waveguide structure 30 under exposing.Can utilize known photoetching etching or laser drill technology to finish this step.Cover among the embodiment of conductor dielectric layer 63 at tool the 3rd not, coupling opening 85 and 86 penetrates first and covers conductor dielectric layer 55 with the optical waveguide structure 30 under exposing.
With reference to figure 9, form groove 91 and 92 from the direction of the second side 30b and penetrate second insulating barrier 82, second and cover conductor dielectric layer 56 and optical waveguide structure 30.Groove 91 and 92 is a V-groove, so can form inclined- plane 93 and 94 on optical waveguide structure 30.Inclined- plane 93 and 94 is corresponding coupling opening 85 and 86 respectively, so groove 91 and 92 is positioned at the position of contiguous coupling opening 85 and 86.Should notice that inclined- plane 93 or 94 has an acute rake angle Θ with respect to the first side 30a, it is preferably 45 degree.Form groove 91 and 92 and can use any suitable known technology, for example v type grooving technology.
Figure 10 shows and makes the 4th step of covering conductor dielectric layer 104 and conduction through hole 105.As shown in figure 10, in this embodiment, the 4th covers conductor dielectric layer 104 sees through viscose glue 101 and is attached at the 3rd and covers on the conductor dielectric layer 63 and first insulating barrier 81.Cover among the embodiment of conductor dielectric layer 63 in tool the 3rd not, the 4th covers 104 of conductor dielectric layers is attached at first and covers on the conductor dielectric layer 55 and first insulating barrier 81.In this embodiment, the 4th covers conductor dielectric layer 104 comprises first dielectric layer 102 and first patterning conductor layer 103 ', and its materials used is preferably the hard copper clad laminate, for example attaches the epoxy resin glass mat FR4 of Copper Foil.Figure 10 shows that more forming conduction through hole 105 penetrates each layer to be electrically connected each conductor layer.In this embodiment, conductor dielectric layer 55,56,63 and 104 is covered in 105 electrical connections first to fourth of conduction through hole.Can utilize any suitable known technology to form conduction through hole 105, for example form through hole, and then the sidewall of plating through hole is to form conduction through hole 105 with X ray.
With reference to Figure 11, its show along the A-A ' of Figure 10 and B-B ' dotted line remove the 4th of a part cover conductor dielectric layer 104 with form breach 111 and 112 and expose under the 3rd cover conductor dielectric layer 63.Cover at tool the 3rd not and to carry out this step among another embodiment of conductor dielectric layer 63 and will expose first and cover conductor dielectric layer 55.Breach 111 and 112 is used to make the follow-up photoelectric cell that provides can directly be installed in the 3rd to cover conductor dielectric layer 63 or first and cover conductor dielectric layer 55 surfaces.As shown in the figure, can provide a photovoltaic diode 114 and light-emitting diode 115 to be arranged at respectively on conductive junction point 83a and 83b and 84a and the 84b.Photovoltaic diode 114 corresponding coupling opening 85,93 refractions enter the light signal (shown in dotted line) of coupling opening 85 through the inclined-plane from optical waveguide structure 30 in order to receive.Photovoltaic diode 114 can change into the signal of telecommunication with this light signal and pass via conductive junction point 83a and 83b.As for light-emitting diode 115, then make its corresponding coupling opening 86.Light-emitting diode 115 will change into that light signal enters coupling opening 86 from the signal of telecommunication of conductive junction point 84a and 84b and through inclined-plane 94 refraction and import in the optical waveguide structure 30.Hence one can see that, sees through the inclined-plane 93 of optical waveguide structure 30 and 94 design, and light signal can navigate on photoelectric cell 114/115, coupling opening 85/86 back and forth, reach between the optical waveguide structure 30.
With reference to Figure 12, optionally along the C-C ' dotted line of Figure 11 remove again the 4th of a part cover conductor dielectric layer 104 with form groove 121 and expose under first insulating barrier 81.As described above, the 4th covers conductor dielectric layer 104 is preferably the hard copper clad laminate and makes, other each conductor dielectric layers then are preferably the soft resin coated copper foil and make, therefore removing the 4th covers conductor dielectric layer 104 (being the hard part) in section shown in the C-C ' dotted line, can make photoelectric mixed circuit board become bent elastic part in the structure of this section, this will help assembling and the application of photoelectric mixed circuit board in electronic product.
The above is the preferred embodiments of the present invention only, is not in order to limit claim of the present invention; All other do not break away from being equal to of being finished under the spirit disclosed in this invention and changes or modify, and all should be included in the claim.
Claims (30)
1. but photoelectric mixed circuit board large tracts of land manufacture method comprises:
The temporary substrate of one non-semiconductor is provided;
Utilize coating and photoetching to form optical waveguide structure on this temporary substrate, this optical waveguide structure defines second side of first side and relative this first side;
Remove this temporary substrate;
Forming first respectively at this first side of this optical waveguide structure and this second side covers conductor dielectric layer and second and covers the conductor dielectric layer;
Forming coupling opening penetrates this and first covers the conductor dielectric layer and expose this optical waveguide structure;
Form groove and penetrate this and second cover conductor dielectric layer and this optical waveguide structure, so that this optical waveguide structure has the inclined-plane; And form photoelectric cell and first cover on the conductor dielectric layer in this, this photoelectric cell is to should coupling opening, wherein this inclined-plane be used to make returned since the light signal generating refraction navigate on this photoelectric cell, this coupling opening, and this optical waveguide structure between.
2. photoelectric mixed circuit board manufacture method as claimed in claim 1, wherein forming this optical waveguide structure before the step on this temporary substrate, also comprise and form release layer on this temporary substrate, so that this release layer is between this temporary substrate and this optical waveguide structure; And the step that removes this temporary substrate also comprises and removes this release layer.
3. photoelectric mixed circuit board manufacture method as claimed in claim 1 was wherein forming this optical waveguide structure before the step on this temporary substrate, also comprised to form projection on this temporary substrate; And the step of this optical waveguide structure of this formation on this temporary substrate also comprises this projection is embedded in this optical waveguide structure.
4. photoelectric mixed circuit board manufacture method as claimed in claim 1 wherein forms this respectively at this first side of this optical waveguide structure and this second side and first covers conductor dielectric layer and this second step of covering the conductor dielectric layer and comprise with the soft resin coated copper foil and first cover conductor dielectric layer and this second and cover the conductor dielectric layer as this.
5. photoelectric mixed circuit board manufacture method as claimed in claim 1, wherein form this coupling opening penetrate this first cover the step of conductor dielectric layer before, also comprise and form the 3rd and cover the conductor dielectric layer and first cover on the conductor dielectric layer in this; And this coupling opening of this formation penetrates this first step of covering the conductor dielectric layer and also comprises and penetrate the 3rd and cover the conductor dielectric layer.
6. photoelectric mixed circuit board manufacture method as claimed in claim 5 wherein forms the 3rd step of covering the conductor dielectric layer and also comprises with the soft resin coated copper foil and cover the conductor dielectric layer as the 3rd.
7. photoelectric mixed circuit board manufacture method as claimed in claim 1, wherein form this coupling opening penetrate this first cover the step of conductor dielectric layer before, also comprise and form first insulating barrier and second insulating barrier respectively and first cover conductor dielectric layer and this second and cover on the conductor dielectric layer in this.
8. photoelectric mixed circuit board manufacture method as claimed in claim 7 wherein forms this groove and penetrates this second step of covering conductor dielectric layer and this optical waveguide structure and also comprise and make this groove penetrate this second insulating barrier.
9. photoelectric mixed circuit board manufacture method as claimed in claim 1 was wherein forming this photoelectric cell before this first this step of covering on the conductor dielectric layer, also comprised to form the 4th and cover the conductor dielectric layer and first cover on the conductor dielectric layer in this; Remove the 4th of a part and cover the conductor dielectric layer and first cover the conductor dielectric layer but also comprise, make this photoelectric cell can directly be installed in this and first cover on the conductor dielectric layer surface to form breach this under exposing.
10. photoelectric mixed circuit board manufacture method as claimed in claim 5 was wherein forming this photoelectric cell before this first this step of covering on the conductor dielectric layer, also comprised to form the 4th and cover the conductor dielectric layer and cover on the conductor dielectric layer in the 3rd; Remove the 4th of a part and cover the conductor dielectric layer and cover the conductor dielectric layer but also comprise, make this photoelectric cell can directly be installed in the 3rd and cover on the conductor dielectric layer surface to form breach the 3rd under exposing.
11. photoelectric mixed circuit board manufacture method as claimed in claim 9 wherein forms the 4th and covers the conductor dielectric layer and first cover step on the conductor dielectric layer and also comprise with the hard copper clad laminate and cover the conductor dielectric layer as the 4th in this.
12. photoelectric mixed circuit board manufacture method as claimed in claim 10 wherein forms the 4th and covers the conductor dielectric layer and cover step on the conductor dielectric layer in the 3rd and also comprise with the hard copper clad laminate and cover the conductor dielectric layer as the 4th.
13. photoelectric mixed circuit board manufacture method as claimed in claim 10 also comprises and forms the conduction through hole and be electrically connected that this first covers the conduction dielectric layer, this second covers conduction dielectric layer, the 3rd and cover conduction dielectric layer and the 4th and cover the conduction dielectric layer.
14. photoelectric mixed circuit board manufacture method as claimed in claim 1 wherein forms this photoelectric cell and first covers step on the conductor dielectric layer and also comprise with photovoltaic diode or light-emitting diode as this photoelectric cell in this.
15. photoelectric mixed circuit board manufacture method as claimed in claim 7 was wherein forming this photoelectric cell before this first this step of covering on the conductor dielectric layer, also comprised formation the 4th and covered the conductor dielectric layer on this first insulating barrier; Remove the 4th of a part and cover the conductor dielectric layer but also comprise to form groove this first insulating barrier under exposing.
16. photoelectric mixed circuit board manufacture method as claimed in claim 1 wherein forms this respectively at this first side of this optical waveguide structure and this second side and first covers conductor dielectric layer and this second step of covering the conductor dielectric layer and comprise pressing Copper Foil and resin film and first cover conductor dielectric layer and this second and cover the conductor dielectric layer to form this.
17. a photoelectric mixed circuit board comprises:
Optical waveguide structure, this optical waveguide structure define second side of first side and relative this first side;
First covers conductor dielectric layer and second covers the conductor dielectric layer, respectively this first side and this second side of this optical waveguide structure of position;
Coupling opening penetrates this and first covers the conductor dielectric layer and expose this optical waveguide structure;
Groove penetrates this and second covers conductor dielectric layer and this optical waveguide structure; And
Photoelectric cell first covers on the conductor dielectric layer in this, and this photoelectric cell is to should coupling opening,
Wherein this ditch slot definition inclined-plane has returned since this inclined-plane is used to make light signal generating to reflect and navigates on this photoelectric cell, this coupling opening, reaches between this optical waveguide structure in this optical waveguide structure.
18. photoelectric mixed circuit board as claimed in claim 17 also comprises the projection that is embedded in this optical waveguide structure.
19. photoelectric mixed circuit board as claimed in claim 17, wherein this first covers conductor dielectric layer and this second and covers the conductor dielectric layer and make with the soft resin coated copper foil.
20. photoelectric mixed circuit board as claimed in claim 17 also comprises the 3rd and covers the conductor dielectric layer, first covers on the conductor dielectric layer in this; And this coupling opening penetrates the 3rd and covers the conductor dielectric layer.
21. photoelectric mixed circuit board as claimed in claim 20, wherein the 3rd covers the conductor dielectric layer and makes with the soft resin coated copper foil.
22. photoelectric mixed circuit board as claimed in claim 17 also comprises first insulating barrier and second insulating barrier, lays respectively at this and first covers conductor dielectric layer and this second and cover on the conductor dielectric layer.
23. photoelectric mixed circuit board as claimed in claim 22, wherein this groove penetrates this second insulating barrier.
24. photoelectric mixed circuit board as claimed in claim 17, also comprise the 4th and cover the conductor dielectric layer, first cover on the conductor dielectric layer in this, the 4th covers the conductor dielectric layer comprises breach this under exposing and first covers the conductor dielectric layer, and this photoelectric cell is arranged in this breach and directly is installed in this and first covers on the conductor dielectric layer surface.
25. photoelectric mixed circuit board as claimed in claim 20, also comprise and form the 4th and cover the conductor dielectric layer and cover on the conductor dielectric layer in the 3rd, the 4th covers the conductor dielectric layer comprises breach the 3rd under exposing and covers the conductor dielectric layer, and this photoelectric cell is arranged in this breach and directly is installed in the 3rd and covers on the conductor dielectric layer surface.
26. photoelectric mixed circuit board as claimed in claim 24, wherein the 4th covers the conductor dielectric layer and makes with the hard copper clad laminate.
27. photoelectric mixed circuit board as claimed in claim 25, wherein the 4th covers the conductor dielectric layer and makes with the hard copper clad laminate.
28. photoelectric mixed circuit board as claimed in claim 25 also comprises the conduction through hole, be electrically connected this first cover the conduction dielectric layer, this second cover the conduction dielectric layer, the 3rd cover the conduction dielectric layer and the 4th cover the conduction dielectric layer.
29. photoelectric mixed circuit board as claimed in claim 17, wherein this photoelectric cell is photovoltaic diode or light-emitting diode.
30. photoelectric mixed circuit board as claimed in claim 22 also comprises the 4th and covers the conductor dielectric layer on this first insulating barrier, the 4th covers the conductor dielectric layer comprises groove this first insulating barrier under exposing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009100022527A CN101778534B (en) | 2009-01-13 | 2009-01-13 | Photoelectric mixed circuit board and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100022527A CN101778534B (en) | 2009-01-13 | 2009-01-13 | Photoelectric mixed circuit board and manufacturing method thereof |
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| CN101778534A true CN101778534A (en) | 2010-07-14 |
| CN101778534B CN101778534B (en) | 2012-07-04 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8995801B2 (en) | 2013-06-26 | 2015-03-31 | International Business Machines Corporation | Planar coaxial electrically and optically conductive structure |
| CN105980895A (en) * | 2013-12-31 | 2016-09-28 | 梅德路米克斯有限公司 | Structure for optical waveguide and contact wire intersection |
| CN107275414A (en) * | 2016-03-02 | 2017-10-20 | 太阳芯片有限公司 | The target integrated circuit combined with multiple photovoltaic cells |
| CN107404797A (en) * | 2016-05-18 | 2017-11-28 | 鹏鼎控股(深圳)股份有限公司 | Multilayer circuit board with segment difference structure and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101394713B (en) * | 2007-09-19 | 2011-01-19 | 欣兴电子股份有限公司 | Photoelectric circuit board and manufacturing method thereof |
-
2009
- 2009-01-13 CN CN2009100022527A patent/CN101778534B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8995801B2 (en) | 2013-06-26 | 2015-03-31 | International Business Machines Corporation | Planar coaxial electrically and optically conductive structure |
| CN105980895A (en) * | 2013-12-31 | 2016-09-28 | 梅德路米克斯有限公司 | Structure for optical waveguide and contact wire intersection |
| CN107275414A (en) * | 2016-03-02 | 2017-10-20 | 太阳芯片有限公司 | The target integrated circuit combined with multiple photovoltaic cells |
| CN107404797A (en) * | 2016-05-18 | 2017-11-28 | 鹏鼎控股(深圳)股份有限公司 | Multilayer circuit board with segment difference structure and preparation method thereof |
| CN107404797B (en) * | 2016-05-18 | 2019-06-11 | 庆鼎精密电子（淮安）有限公司 | Multilayer circuit board and preparation method thereof with segment difference structure |
Also Published As
| Publication number | Publication date |
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| CN101778534B (en) | 2012-07-04 |
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