CN100405622C - Light-emitting element - Google Patents

Abstract

The invention relates to a lightening device, which is characterized in that the lightening device comprises an insulating baseplate and a semiconductor film formed on the insulating baseplate; a p-shaped semiconductor area and an n-shaped semiconductor area are formed close to the upper part of the semiconductor film; the lightening device shines according to the voltage exert between the p-shaped semiconductor area and the n-shaped semiconductor area; an electrostatic protection element is arranged on the lightening device, and the electrostatic protection element has two pole tips which are electrically connected with the p-shaped semiconductor area and the n-shaped semiconductor area of the lightening device respectively; when the voltage above an assigned voltage is received between the p-shaped semiconductor area and the n-shaped semiconductor area of the lightening device, wherein, the assigned voltage is less than or equal to a failure voltage, the electrostatic protection element admits the current to pass through between the two pole tips.

Description

Semiconductor light-emitting apparatus

The application is to be on December 26th, 1997 applying date, and application number is 97193501.7, and denomination of invention is divided an application for " light-emitting component and semiconductor light-emitting apparatus and manufacture method thereof ".

Technical field

The present invention relates to a kind of semiconductor light-emitting apparatus and manufacture method thereof that has the light-emitting component of the semiconductor laminated film that on insulated substrate, forms and comprise this semiconductor light-emitting elements, particularly, for light-emitting component (LED) that adopts the gallium nitride compound semiconductor that on sapphire substrate, forms and the light-emitting device (LED lamp) that comprises this light-emitting component, particularly suitable of the present invention.

Background technology

In recent years, along with LCD etc. is utilized the expanded demand of the device of light, various light-emitting components are practicability.In such light-emitting component, gallium nitride compound semiconductor (InXAlYGal-X-YN, 0≤X, 0≤Y, X+Y≤1) at present as blue look of high brightness and green LED (LED) commercialization, also very prominent as the material that constitutes blue look laser diode, UV sensor or solar cell etc. from now on simultaneously.

Fig. 4 A, Fig. 4 B and Fig. 4 C are respectively vertical view, B-B line cutaway view and the C-C line cutaway view of the existing GaNLED element of representing commercialization.The thickness of semiconductor layer shown in the figure is not corresponding with actual thickness.Fig. 5 is a cutaway view of representing the existing LED lamp of commercialization.This GaNLED element 40, lamination has GaN resilient coating 31, n type GaN layer 32, InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 successively on sapphire substrate 30, forms the structure of dual isomery.Form above the n type GaN layer 32 by hypomere portion and epimere portion form stepped, on the n of hypomere portion type GaN layer 32, be formed with the n electrode of forming by Ti and Au 36.Lamination has above-mentioned InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 successively on the n of epimere portion type GaN layer 32.On p type GaN layer 35, be formed with the transparency electrode 37 of the electric current diffusion usefulness of forming by Ni and Au, and further form p electrode 38 thereon.This GaNLED element 40 is owing to adopt the sapphire substrate of insulation to constitute, and two electrodes all form on sapphire substrate.Also having, is that light takes out face from GaNLED element 40 upper face sides, except that the 36a of connection pads portion, the 38a of n electrode 36 and p electrode 38, all covers with diaphragm 39 above.Then, bonding agent 43 small pieces of this GaNLED element 40 by insulating properties are bonded on the die pad of front end of lead frame 44a.The n electrode 36 of GaNLED element 40 joins with lead frame 44a by Au line 41, and p electrode 38 joins with lead frame 44b by Au line 42.Then, the leading section of lead frame 44a, 44b that loads GaNLED element 40 with epoxy resin 45 molded package of printing opacity, is made the LED lamp.

There is following problem in above-mentioned existing light-emitting component.

As mentioned above, in order to allow GaNLED element 40 be electrically connected and when going between bonding with other element etc., need n electrode 36 and p electrode 38 on form a diameter greater than the circle of 100 μ m or the one length of side the square connection pads 36a of portion, 38a greater than 100 μ m at least respectively, and, make that the taking-up efficient of light is bad owing to will form above-mentioned two electrodes 36,38 in the taking-up light side.Therefore,, will restrict the size of dwindling light-emitting component, have the problem that is difficult to make the light-emitting component miniaturization if will guarantee required area for the taking-up amount of wanting to guarantee necessary area and light on the 36a of connection pads portion, 38a.

Summary of the invention

Main purpose of the present invention, be in semiconductor light-emitting elements and manufacture method thereof, to reduce the required area of electrode that light-emitting component is electrically connected, seek the light-emitting component integral miniaturization, improve the brightness of light-emitting component and the taking-up efficient of light simultaneously, and a kind of light-emitting device that comprises this light-emitting component is provided.

Light-emitting device of the present invention, it is characterized in that including: light-emitting component, the p N-type semiconductor N zone that have transparency carrier, on the zone of the part among the n N-type semiconductor N zone that forms on this transparency carrier and this n N-type semiconductor N zone, forms, and light-emitting component according in described p N-type semiconductor N zone-the interregional voltage that applies of n N-type semiconductor N and luminous; Electrostatic protection element; it has two utmost point portions that are electrically connected respectively with the described p N-type semiconductor N zone and the described n N-type semiconductor N zone of described light-emitting component; described two utmost point portions are first utmost point portion that is connected with described n N-type semiconductor N zone; with second utmost point portion that is connected with described p N-type semiconductor N zone; when the described p N-type semiconductor N zone of described light-emitting component-when described n N-type semiconductor N zone receives the voltage that has surpassed the assigned voltage that is less than or equal to disintegration voltage each other; electrostatic protection element circulates between described two utmost point portions by electric current; described light-emitting component and described electrostatic protection element are in overlapped state; described electrostatic protection element; be being 1 diode of positive direction to the direction of described second utmost point portion circulating current from described first utmost point portion; and on the face relative, have and be connected respectively to described first with described light-emitting component; first of second utmost point portion; second electrode; described light-emitting component; on described light-emitting component, have p electrode that is connected with described p N-type semiconductor N zone and the n electrode that is connected with described n N-type semiconductor N zone; between the p electrode of described light-emitting component and second electrode of described electrostatic protection element; and between first electrode of the n electrode of described light-emitting component and described electrostatic protection element; all be electrically connected, and described transparency carrier is placed as top by the face with an opposite side with electrode forming surface by miniature projection.

Description of drawings

Fig. 1 is the electrode configuration vertical view of the gallium nitride compound semiconductor light-emitting device of the relevant embodiment of the invention 1 of expression.

Fig. 2 is the cutaway view along A-A line among Fig. 1 of the gallium nitride compound semiconductor light-emitting device of the relevant embodiment 1 of expression.

Fig. 3 is installed in the gallium nitride compound semiconductor light-emitting device of relevant embodiment 1 with miniature projection connection method the cutaway view of the LED matrix that the back is obtained on the lead frame for expression.

Fig. 4 A is the vertical view of the conventional LED element of expression commercialization; Fig. 4 B is the cutaway view along its B-B line; Fig. 4 C is the cutaway view along the C-C line.

Fig. 5 is the cutaway view of the formation of the existing LED lamp of expression commercialization.

Fig. 6 A is the vertical view of the structure of the GaNLED element of the relevant embodiment 2 of expression; Fig. 6 B is the cutaway view along its D-D line.

Fig. 7 A is the vertical view of the structure of the GaNLED element of the relevant embodiment 3 of expression; Fig. 7 B is the cutaway view along its E-E line.

Fig. 8 A is the vertical view of the structure of the GaNLED element of the relevant embodiment 4 of expression; Fig. 8 B is the cutaway view along its F-F line.

Fig. 9 A is the vertical view of the structure of the GaNLED element of the relevant embodiment 5 of expression; Fig. 9 B is the cutaway view along its G-G line.

Figure 10 is the vertical view of the structure of the GaNLED element of the relevant embodiment 6 of expression.

Figure 11 A is the vertical view of the structure of the GaNLED element of the relevant embodiment 7 of expression; Figure 11 B is the cutaway view along its H-H line.

Figure 12 A is the vertical view of the structure of the GaNLED element of the relevant embodiment 8 of expression; Figure 12 B is the cutaway view along its I-I line.

Figure 13 is the cutaway view of LED lamp for the GaN of the relevant embodiment 9 of expression.

Figure 14 is the circuit diagram of the protective circuit of the LED lamp of the relevant embodiment 9 of expression.

Figure 15 A is the vertical view of the structure of the GaNLED element of the relevant embodiment 9 of expression; Figure 15 B is the cutaway view along its J-J line.

Figure 16 A is the vertical view of the structure of the Si diode element of the relevant embodiment 9 of expression; Figure 16 B is the cutaway view along its K-K line.

Figure 17 is the vertical view of the structure of the expression GaNLED element of relevant embodiment 10 and diode element.

Figure 18 is the vertical view of the structure of the expression GaNLED element of relevant embodiment 11 and diode element.

Figure 19 is the vertical view of the structure of the expression GaNLED element of relevant embodiment 12 and diode element.

Figure 20 is the cutaway view of expression according to another embodiment of semiconductor light-emitting apparatus of the present invention.

Figure 21 is the flow chart of the manufacture method of the relevant embodiment 13 of expression.

Figure 22 is the flow chart of the manufacture method of the relevant embodiment 14 of expression.

Figure 23 is the flow chart of the manufacture method of the relevant embodiment 15 of expression.

Figure 24 is the flow chart of the manufacture method of the relevant embodiment 16 of expression.

Figure 25 is the flow chart of the manufacture method of the relevant embodiment 19 of expression.

Figure 26 is the flow chart of the manufacture method of the relevant embodiment 20 of expression.

Figure 27 connects in the operation for being illustrated in chip, substrate, LED element and transport the model cutaway view that concerns between the anchor clamps of LED element.

Figure 28 is illustrated in the operation that forms the post pin model cutaway view of the relation between substrate and the capillary 102.

Figure 29 connects in the operation for being illustrated in chip, with respect to the cutaway view of the configuration status of the Si diode element LED element on the cradle portion.

Figure 30 is illustrated in the operation that forms the post pin model cutaway view of the relation between substrate 30 and the capillary 102.

Figure 31 A is the vertical view that is illustrated in the LED element that uses among the embodiment 13; Figure 31 B is the cutaway view along its L-L line.

Figure 32 A forms the vertical view of the LED element of miniature projection with galvanoplastic for expression; Figure 32 B is the cutaway view along its M-M line.

Figure 33 A forms the vertical view of the Si diode element of post pin for expression; Figure 33 B is the cutaway view along its N-N line.

Figure 34 is the flow chart of the manufacture method of the relevant embodiment 21 of expression.

Figure 35 checks in the operation model cutaway view of the relation between substrate, probe and the photodetector for being illustrated in light characteristic.

Embodiment

Light-emitting component

Have at a miniature projection that forms on first electrode and at least one miniature projection of on second electrode, forming according to light-emitting component of the present invention.To have only one reason be to be that Min. ground dwindles in order to make the shared area of first electrode to the quantity of miniature projection on first electrode, and the light-emitting area of light-emitting component can be increased to greatest extent.On first electrode, can form the miniature projection (following so miniature projection is called " the miniature projection of point-like ") of the cylindrical or mushroom-shaped of diameter 30-40 μ m degree.

In the present invention, on second electrode quantity of miniature projection more than one.This is because by the chip at semiconductor light-emitting elements such as miniature projection of the point-like that is provided with on first electrode and the stable GaNLED of support of the miniature projection that is provided with on second electrode elements, make this chip be unlikely to tilt.In order to reach this purpose, miniature protruding in vain the time when on second electrode, forming point-like, the quantity of its miniature projection with more than two for well.The be linked to be wire continuous when the miniature projection of point-like forms miniature projection when (following so miniature projection is called " the miniature projection of wire "), what perhaps the miniature projection of point-like was continuous is linked to be the miniature projection of planar formation when (following so miniature projection is called " planar miniature projection "), and the quantity of its miniature projection has only one also to be enough.

The full-size of the transverse direction of miniature projection with in the scope of 5-300 μ m for well, height with in the scope of 5-50 μ m for well.The full-size of transverse direction is being determined according to the easy degree that forms when forming miniature projection with plating by good more than the 5 μ m.The horizontal full-size of miniature projection with below 300 μ m for well.

The miniature projection of point-like is so that to have diameter be the circular of 30-40 μ m or be included in the interior polygonal of this circle for well.The miniature projection of wire is 20-30 μ m with its width, and length is that 150-200 μ m is of a size of.

The height of miniature projection with greater than 5 μ m for well, this is because when the chip with semiconductor light-emitting elements is contained on the lead frame by miniature projection, employing be method of attachment by weight, heat and ultrasonic bonding.If the height of miniature projection is less than 5 μ m, chip will contact with the part beyond the projection with lead frame, might cause bad short circuit.The height of miniature projection with less than 50 μ m for well.This is because the height of this degree can form miniature projection easily with galvanoplastic.The height of miniature projection is serving as better in the scope of 20-30 μ m.

In assembling procedure, the substrate that forms semiconductor light-emitting elements is divided into shaped like chips, when being loaded into chip in the lead frame, the chip that miniature projection is placed down, when being the miniature projection of point-like, owing on first electrode, form one, on second electrode, form at least two, chip will be at least by supported at three point thereby can not tilt.At this moment, three miniature projections in chip with on three summits that are configured in two big as far as possible equilateral triangles for well.

Also have, on first electrode, form the miniature projection of point-like, when on second electrode, forming miniature projection of wire or planar miniature projection, support by the point more than three thereby can not tilt because the miniature projection on second electrode is made the miniature projection of wire or planar miniature projection chip.Therefore, can eliminate chip identification mistake or manipulator loading error during assembling.

The miniature projection that forms on this external second electrode can be a plurality of point-like or wire or planar miniature projection miscellaneous, but the miniature projection that forms on first electrode has only 1 miniature projection of point-like for well with formation.Can reduce the area of first electrode as far as possible like this, and increase light-emitting area as far as possible.

According to light-emitting component of the present invention, when chip is contained on the lead frame by miniature projection, even adopt the method for attachment by weight, heat and the miniature projection of ultrasonic bonding Au, chip can not contact with the part beyond the projection with lead frame yet, can not cause bad short circuit.

Below forming first electrode and/or second electrode of miniature projection, at first and/or second conductive-type semiconductor region to apply the compactness good metal for well.Like this, when the chip of semiconductor light-emitting elements is connected on the lead frame by miniature projection, even by weight, heat and the miniature projection of ultrasonic bonding Au in conjunction with operation in, can not produce the problem of stripping electrode by the ultrasonic wave effect yet.When first and second conductive-type semiconductor region was n type GaN and p type GaN, Ti was the compactness good metal, and Ti also is the good resistance contact-type electrode of n type GaN, is well suited for.

On first electrode and second electrode, in the zone beyond forming miniature projection zone, also can form the zone (probe area) that probe can touch.Like this, in the probe in detecting operation of the Characteristics Detection of carrying out light-emitting component, probe can not touch miniature projection, can not damage miniature projection.Above-mentioned probe area though need the area of 50 μ m * 50 μ m at least, is easy to guarantee above-mentioned probe area on second electrode.Yet, on first electrode, should reduce this area as far as possible.

The part that the probe area of first electrode also can be crossed over cutting belt forms.Like this, first electrode can be made and can form the big or small degree that a diameter is the cylindrical or mushroom-shaped miniature projection of 30-40 μ m degree, makes light-emitting area increase as far as possible.At this moment, be designed on line of cut, expose n type GaN layer.Also have, though can separate first electrode, zone and the probe area that forms miniature projection separated yet, preferably adjacent the lumping together in two zones do not separated first electrode.Can correctly carry out Characteristics Detection like this.

Also can form the peristome that takes out the light that light-emitting component sends on second electrode.Like this, can deliver to the detector that is positioned at the top, carry out the mensuration of light intensity and wavelength from the light that peristome comes out.The peristome that forms on second electrode is the circle below the 20 μ m with diameter or can be included in polygonal in this circle for well.This is because when peristome is excessive, and second conductive-type semiconductor region (p type GaN) is thin, can not fully carry out electric current to active layer and inject, and not only can not fully take out light, and become the brightness main reasons for decrease.Though and the too little light that can not fully take out of peristome can adopt latticed a plurality of peristome.

On the peristome that is formed on second electrode, also can form resistance contact-type conductive clear electrode on second conductive-type semiconductor region.Like this, can be in above-mentioned InGaN active layer injection current and take out light.

In addition, the position of the detector of change probe if it can be arranged on the below of disk, has not just needed peristome certainly.

Also have, it is the material formation of the transparent body that substrate can adopt for the light that light-emitting component sends.Like this, just can go out the light that sends in the element, can take out the good light of efficient of upside-down mounting chip structure at substrate one side-draw.When light-emitting component was made of the GaN based compound semiconductor, substrate was to be constituted by sapphire.Like this, because GaN crystallization and the conformability of sapphire crystallization on the crystallography meaning are good, therefore and sapphire substrate is a printing opacity insulating properties substrate, is well suited for being used for upside-down mounting chip structure, can obtain the good upside-down mounting chip structure light-emitting component of the characteristics of luminescence such as blue coloured light.Also have, about the taking-up efficient of light, because the refractive index of GaN is 2.1, sapphire refractive index is 1.77, the refractive index of epoxy resin is 1.5, so sapphire substrate has the refractive index in the middle of GaN and the epoxy resin, is the substrate that is well suited for that can efficient takes out light well.

The embodiment of foundation light-emitting component of the present invention is described with reference to the accompanying drawings.

Embodiment 1

Fig. 1 and Fig. 2 represent the vertical view of GaNLED element 1 of present embodiment and the cutaway view of A-A line respectively.As depicted in figs. 1 and 2, GaNLED element 1 be on sapphire substrate 30 successively lamination GaN resilient coating 31, n type GaN layer 32, InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 are arranged, have the structure of dual isomery.Form above the n type GaN layer 32 by above only accounting for seldom the hypomere portion of part and account for above remaining most epimere portion form stepped, on the n of hypomere portion type GaN layer 32, be formed with the n electrode 6 that the laminated film of overlapping Ni and Au is formed on the laminated film of Ti and Au.Lamination has above-mentioned InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 successively on the n of epimere portion type GaN layer 32.Then, on p type GaN layer 35, do not establish the transparency electrode of electric current diffusion usefulness, and the p electrode of being made up of Ni and Au 5 directly is set.The planar dimension of GaNLED element 1 is that the length of side is the square of 0.28mm degree in the present embodiment.Then, be formed with the miniature projection of making by Au or Au alloy 22 and 23 respectively at n electrode 6 with above the p electrode 5.

Fig. 3 adopts miniature projection welding for expression and GaNLED element 1 is installed in the general profile chart of formed LED matrix on the lead frame.At the front end of lead frame 13a, 13b, be provided with two die pad 17a, 17b that mutually insulated separates, miniature projection 23,22 keeps in touch respectively under the state on each die pad 17a, the 17b, and GaNLED element 1 carries on die pad 17a, 17b.GaNLED element 1 and die pad 17a, 17b fix with ultra-violet solidified insulating resin 16.

Also have, the light that sends from light-emitting zone is reflected upward by lead frame 13a, takes out from the top by sapphire substrate 30.Also have, for the light that will spill from the side of GaNLED element 1 reflects upward, the side of lead frame 13a, 13b is provided with reflecting plate 15a, 15b.

Below, the manufacture method of the LED matrix of relevant present embodiment is described.

The manufacture method of LED element at first is described.

As mentioned above, lamination has GaN resilient coating 31, n type GaN layer 32, InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 successively on sapphire substrate 30, forms the substrate with dual heterogeneous structure.Then on the surface of the p of this substrate type GaN layer 35, the regional opening that to want selectively to remove forms SiO2 resistance mask, carry out dry ecthing with this SiO2 resistance mask, each part of p type GaN layer 35, p type AlGaN layer 34, InGaN active layer 33 is removed selectively along longitudinal direction, further, the part of n type GaN layer 32 is dug into a little downwards from the surface, makes whole one-tenth stairstepping.

Secondly, an example that forms the order of p electrode 5, n electrode 6 and miniature projection 22,23 on GaNLED element 1 is described.

In order on n type GaN layer 32, to form n electrode 6, adopt and dispel method or etching method, at lamination successively thickness be about after the Ti film of 0.2 μ m and thickness is about the Au film of 0.5 μ m, it is round-shaped about 50 μ m that this laminated film patterning is become diameter.Further, on whole of substrate, form the Ni film that thickness is about 0.2 μ m, evaporation forms the Au film that thickness is about 1 μ m on this again.After this, carry out the photetching operation, the regional opening that will form miniature projection on the laminated film of Ni film and Au film forms the resistance mask.Then, carry out the selective electroplating of Au or Au alloy in the open area of this resistance mask, in the zone of n electrode 6 and p electrode 5 positions, form diameter respectively and be about 30 μ m, highly be about the miniature projection 22,23 of the mushroom shaped of 20 μ m.After this, stay the almost whole zone of p type GaN layer 35 position and the zone of the interior position of n electrode, the Ni film and the Au film that are attached to part outside this are removed selectively with etching.

Below, the order that GaNLED element 1 carries on lead frame 13a, 13b is described.

Facing down of miniature projection 22,23 will be formed, sapphire substrate 30 upwards, allow GaNLED element 1 be in the upside-down mounting state, relative with die pad 17a, the 17b of lead frame 13a, 13b, and allowing miniature projection 22 and die pad 17a on the p electrode 5, miniature projection 22 on the n electrode 6 and die pad 17b are respectively to good position.Then, be coated on die pad 17a, 17b or the GaNLED element 1, ultra-violet solidified insulating resin 16 solidified while push down the 1 usefulness ultraviolet irradiation of GaNLED element with ultra-violet solidified insulating resin 16.Also have, also can after carrying GaNLED element 1, just die pad 17a, 17b be cut.

According to present embodiment, in the LED matrix of built-in GaNLED element 1, on one side, form p electrode 5 and n electrode 6, on this n electrode 6 and p electrode 5, form miniature projection 22,23, by this miniature projection 22,23 GaNLED element 1 is connected on the parts such as lead frame, such structure can obtain following effect.

At first, it is about 10 μ m that miniature projection can narrow down to diameter usually simply, because do not need the desired connection pads of existing element, thus the structure of electrode can be dwindled, thus make the compact in size of light-emitting component (the GaNLED element 1 in the present embodiment) become possibility.And, because miniaturization, can reduce the use amount that resembles expensive material sapphire substrate 30 and the compound semiconductor substrate, thereby can reduce cost.Also have, owing to n electrode 6 can dwindle, the light-emitting zone of GaNLED element 1 inside, promptly the pn calmodulin binding domain CaM increases, and compares with the element of existing same size, can improve brightness.And light takes out face, direction shown in arrow among Fig. 3, be with sapphire substrate 30 1 sides of each electrode 5,6 formed opposition sides because the parts such as electrode that do not hinder light to take out, so also improved the efficient that light takes out.

Below, the desirable shape of miniature projection of the characteristic of present embodiment is described.The diameter of miniature projection 22,23, as previously mentioned, with at 5-300 μ m for well, and serving as better in the scope of 5-100 μ m.When the diameter of miniature projection 22,23 surpassed 100 μ m, its area occupied increased, and compared with wire bonds not have too many advantage.The diameter of miniature projection is serving as better in the scope of 10-30 μ m.On the other hand, the height of miniature projection 22,23, for cylindrical with below 30 μ m for well, for mushroom-shaped with below 50 μ m for well.For cylindrical, if want to form, there is the thickness of the formed resistive film of photoetch operation to thicken with selective electroplating, the resistive film that be formed with the above thickness of 30 μ m is relatively more difficult.Also have, for mushroom shaped, when the height that surpasses 50 μ m is electroplated, the diameter of the transverse direction of mushroom cap part will increase to about 100 μ m, compare with wire bonds not have too many advantage.

The size of n electrode 6, hope are only than the size that can form miniature projection 22, and the diameter of promptly miniature projection 22 cylinders will bigger a little circle.When for example the diameter of miniature projection was the 30 μ m left and right sides, then its diameter was the miniaturization that the bowlder of 50 μ m is suitable for LED matrix.Also have, the shape in the cross section of miniature projection is not limited to the circle described in the foregoing description, also can adopt ellipse or approaching foursquare shape obviously.At this moment, horizontal full-size is as long as in the size range of above-mentioned diameter.

Also have,, do not need on the p electrode 5 to resemble and form transparency electrode the existing GaNLED element, the p electrode of thick film also can be set on whole of p type GaN layer 35 because light taking-up face is in sapphire substrate 30 1 sides.

The size of the LED element of making of said method for example be that its length of side is the square of 0.28mm, and the area that does not participate in around the luminous n electrode only accounts for 1/15th of element surface.The size of existing element is that its length of side is the square of 0.34mm, will not account for 1/2nd of element surface and do not participate in luminous area.In this embodiment promptly, although component size narrows down to 0.68 times, light-emitting area is increased to 1.26 times.

Also have, in the manufacture method of the foregoing description, owing to be the metal of lamination p electrode special use (Ni and Au) again on the metal (Ti and Au) in the special use of n electrode, on the metal of this p electrode special use, constitute the selective electroplating of the metal of miniature projection, so that the condition of selective electroplating can keep is even.Its result, p electrode 5 just is made of the metal of p electrode special use, n electrode 6 is overlapping metals of p electrode special use on the metal of n electrode special use on the other hand, so can alleviate the section jump between p type GaN layer 35 and the n type GaN layer 32, make that the tip of miniature projection 22,23 at two places is to be in identical height basically.But the manufacture method of light-emitting component of the present invention is not limited to such embodiment, and p electrode and n electrode also can be respectively only be made of the metal of special use, form miniature projection thereon.Also have, when piling up the metal that constitutes miniature projection, be not limited to the selective electroplating method, also can after pile up metal film, spend division and remove resistance mask and the metal film around it, only stay miniature projection with evaporation etc.

Also have, in the above-described embodiments, though the GaNLED element is to carry on lead frame, the present invention is not limited to such embodiment.For example, the GaNLED element also can be connected on active element or passive device or the mother substrate in upside-down mounting, on the contrary, also can on the GaNLED element upside-down mountings such as other active element or passive device be connected.

Also have, relevant light-emitting component of the present invention is not limited to the GaNLED element, also can be other light-emitting component.But,,, can bring into play more significant effect so be suitable for the present invention in the side formation of p electrode and n electrode because the GaNLED element is to form on the sapphire substrate of transparent insulation.

Further, might not to require be the transparent body to the substrate of relevant light-emitting component of the present invention.When adopting opaque substrate, light goes out to get final product from a side-draw opposite with substrate.But when adopting the transparent body to constitute, light can go out from a p electrode side-draw opposite with the n electrode, as mentioned above, can improve the efficient that light takes out.

In the probe in detecting operation of the characteristic that detects above-mentioned GaNLED element or cut apart chipset and install in the assembling procedure in the lead frame etc., may produce following problem.

The first, in assembling procedure, the substrate that forms the GaNLED element is divided into the chip of a GaNLED element unit, when being loaded into each chip in the lead frame etc., below miniature projection was placed into, the manipulator of diaphragm connector etc. can be discerned and take out this chip.At this moment, by two miniature projection supporting chips, chip tilts easily, thereby worry has problems in identification or when taking out with manipulator.Also have, when being connected to chip in the lead frame etc. by miniature projection, when adopting the method for attachment by weight, heat and the miniature projection of ultrasonic bonding Au, when the height of miniature projection was low, chip might contact with projection part in addition with lead frame.If produce such contact, can cause bad short circuit, produce the problem of peeling off electrode by ultrasonic wave.

The second, the n electrode 6 of GaNLED element can dwindle as mentioned above as far as possible to enlarge light-emitting area.For this reason, the size of electrode is that the size of miniature projection of the cylindrical or mushroom-shaped about 30 μ m is for well can form a diameter.At this moment, the shape of n electrode 6 is being that diameter is that circle about 60 μ m is for well.In the probe in detecting operation of carrying out the element characteristic detection, probe might contact miniature projection, and produces the problem of damaging miniature projection.

When three, implementing the probe in detecting operation, the substrate that forms the GaNLED element is placed on the testboard up by electrode one side, fixes with vacuum chuck with common probe.Allow probe carry out Characteristics Detection from the top contact electrode of substrate, usually the detector of measuring light intensity and wavelength is placed on the top of testboard, and the taking-up of the light of GaNLED element is to carry out from sapphire substrate one side, therefore might produce and can not fully light be delivered on the detector that is positioned at the top.

The following examples relate to the light-emitting component that obstacle can not take place in the detection operation of the light-emitting component of the upside-down mounting structure with miniature projection and assembling procedure.

Embodiment 2

Fig. 6 A and Fig. 6 B represent the vertical view of GaNLED element 1 of present embodiment and the cutaway view of D-D line respectively.Present embodiment is characterised in that and forms a miniature projection of point-like and form two miniature projections of point-like on the n of GaNLED element 1 electrode 6 on p electrode 5.

Describe this structure below in detail, shown in Fig. 6 A and Fig. 6 B, GaNLED element 1 be on sapphire substrate 30 successively lamination GaN resilient coating 31, n type GaN layer 32, InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 are arranged, have the structure of dual isomery.Be formed with by the hypomere portion that only accounts for few part above the n type GaN layer 32 and account for stepped that remaining most epimere portion forms, on the n of hypomere portion type GaN layer 32, be formed with the n electrode 6 that the laminated film of overlapping Ni and Au is formed on the laminated film of Ti and Au.Lamination has above-mentioned InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 successively on the n of epimere portion type GaN layer 32.Then, on p type GaN layer 35, do not establish transparency electrode, and directly the p electrode of being made up of Mg and Au 5 is set.After this, on n electrode 6, be formed with a miniature projection 24 of point-like that constitutes by Au or Au alloy, also have, on p electrode 5, be formed with 2 miniature projections 25 of point-like that constitute by Au or Au alloy.Then, cover at element surface all protected film 39 except that miniature projection.

At this, the size of above-mentioned three miniature projections of point-like is that its diameter is 40 μ m, highly is mushroom-shaped or the circle of 20 μ m, is configured in chip on the position on three summits of maximum desirable two equilateral triangles.

Like this, because the chip of GaNLED element 1 is supported by three miniature projections, even miniature projection is placed also can not tilt, the taking-up mistake of the identification error or the arm of chip can not appear down when diaphragm connects.

Also have, the height of miniature projection is arranged to 20 μ m, in the operation that by the miniature projection of weight, heat and ultrasonic bonding the chip of above-mentioned GaNLED element 1 is connected in lead frame etc., by setting suitable condition of contact, the bad short circuit that causes with regard to not taking place said chip to contact with projection part in addition with lead frame, and can fully keep bonding strength.

Also have, the Mg of the Ti of n electrode and P electrode is the electrode material that GaN is had strong adhesive force, hyperacoustic peeling off can not taken place.

Embodiment 3

Fig. 7 A and Fig. 7 B represent the vertical view of GaNLED element 1 of present embodiment and the cutaway view of E-E line respectively.Present embodiment is characterised in that and forms a miniature projection 24 of point-like and form the miniature projection 25a of wire on the n of GaNLED element 1 electrode 6 on p electrode 5, and other is identical with embodiment 2.

The size of the miniature protruding in vain 25a of wire on the p electrode 5 is that its width is that 20 μ m, length are 180 μ m, highly are 20 μ m, is mushroom-shaped or cylindricality on above-mentioned E-E section.

At this moment, because the chip of GaNLED element 1 is supported by miniature projection, the taking-up mistake of the identification error or the arm of chip can not appear when diaphragm connects.

Embodiment 4

Fig. 8 A and Fig. 8 B represent the vertical view of GaNLED element 1 of present embodiment and the cutaway view of F-F line respectively.Present embodiment is characterised in that and has laid below the p electrode at the miniature projection place of GaNLED element 1 and connecting airtight property of p type GaN layer good metal, and other is identical with second embodiment.

Material as p electrode 5, when adopting the laminated film of Ni and Au etc., since p type GaN layer and Ni connect airtight power a little less than, in the operation in the chip of above-mentioned GaNLED element 1 being connected to lead frame etc. by the miniature projection of weight, heat and ultrasonic bonding, ultrasonic wave can will be in p type GaN layer below the miniature projection 25 p electrode 5 nearby and the interface peel of Ni.In order to prevent this from occurring, when below the p electrode 5 at miniature projection 25 places nearby lay the strong metals 73 such as Ti of connecting airtight property the time, effect is remarkable, can not peel off during connection, keeps sufficient bonding strength simultaneously.

In the above-described embodiments, though only enumerated the method for attachment that is connected chip and lead frame etc. by weight, heat with the miniature projection of ultrasonic bonding, but be not limited to this method of attachment, for example be applicable to also that double-screw bolt connects (SBB) method or adopts the SCF method of different side's conducting strip/bonding agent or the operation method of employing welding column.

Embodiment 5

Fig. 9 A and Fig. 9 B represent the vertical view of present embodiment part of formed GaNLED element group on two inches substrates and the cutaway view of G-G line respectively.Present embodiment is characterised in that the p electrode 5 of GaNLED element 1 and n electrode 6 are provided with probe area, and particularly the probe area that is provided with on the n electrode is to form on cutting belt.

In Fig. 9 A, on the hypomere portion of said n type GaN layer 32, be formed with n electrode 6, the formation cross-over connection of this n electrode 6 part of cutting belt 37.Also have, be formed with p electrode 5 on almost whole on p type GaN layer 35, on n electrode 6 and p electrode 5, be formed with the miniature projection of making by Au or Au alloy 24 and 25 respectively.Cover with diaphragm 39 on the surface of element then, and on the probe area 5a of Au projection 25 on p electrode 5 and contact probe and Au projection 24 above the n electrode 6 and the probe area 6a with diaphragm 39 openings.At this, the probe area 5a of p electrode 5 is of a size of 70 μ m * 80 μ m, and the probe area 6a of n electrode 6 is of a size of about 40 μ m * 80 μ m.

Like this, the probe area 6a on the n electrode 6 is formed on the cutting belt 71, just can damage miniature projection and carry out probe in detecting, and can increase the light-emitting area of GaNLED element 1 as far as possible.

Embodiment 6

As shown in figure 10, present embodiment except that the form of separating with n electrode 6 forming on the cutting belt the probe area 6b, identical with embodiment 5.The size of probe area 6b is smaller a little, but can put into probe.At this moment, owing to probe area 6b is arranged on the cutting belt, so can increase the light-emitting area of GaNLED element 1 as far as possible.But probe area 6b does not separate with n electrode 6 then more can correctly carry out Characteristics Detection.

Embodiment 7

Figure 11 A and Figure 11 B represent the vertical view of GaNLED element 1 of present embodiment and the cutaway view of H-H line respectively.Present embodiment is characterised in that the central part at the p of GaNLED element 1 electrode 5, becomes the ranks shape to be provided with a plurality of peristomes 72.The size of a peristome is that diameter is the circle of 10 μ m, by being configured to triplex row five row, can supply with brightness and the required light quantity of wavelength detection to detector.

Also have, peristome 72 is not limited to the central part of p electrode 5, so long as the position that can form in the p electrode gets final product.

Embodiment 8

Figure 12 A and Figure 12 B represent the vertical view of GaNLED element 1 of present embodiment and the cutaway view of I-I line respectively.Present embodiment is that the ranks with the peristome among the embodiment 7 72 partly are replaced into resistance contact-type transparency electrode on the p type GaN layer.At this moment transparency electrode is of a size of 50 μ m * 100 μ m, can supply with sufficient light quantity to detector.Certainly, size also not only is defined in this value.

Semiconductor light-emitting apparatus

The LED lamp that semiconductor layer obtains is set on insulated substrate as shown in Figure 5 because reasons such as the physical constant (for example, DIELECTRIC CONSTANT) of element material, component constructions, general anti-static ability a little less than.For example,, allow it produce discharge between the two if this LED lamp and the capacitor opposite that charges into static are placed, the electrostatic pressure of the about 100V of forward then, oppositely approximately the electrostatic pressure of 30V just can damage it.This value is compared with the LED element that is made of other block compound semiconductor (GaP, GaAlAs etc.), is low-down value.For this reason, if do not take not allow the protection processing that applies static from the outside just use the LED lamp, inner GaNLED element will be damaged very soon.

Below, keep the high semiconductor light-emitting apparatus of reliability of the destruction function that prevents high voltages such as static in the explanation.

Embodiment 9

Figure 13 is the cutaway view of semiconductor light-emitting apparatus (GaN is the LED lamp) in the expression present embodiment.The GaN of relevant present embodiment is that the LED lamp is characterised in that GaNLED element 1 does not directly carry on lead frame, carries on lead frame but GaNLED element 1 will have the Si diode element 2 of p electrode and n electrode to be clipped in the middle.

As shown in figure 13, on the die pad of the front end of the lead frame 13a that speculum is arranged, up, ventricumbent direction is placed with Si diode element 2 down by interarea.Also have, n electrode 9 below the Si diode element 2 and the die pad of lead frame 13a contact, and with Ag paste 14 its small pieces are bonded on the die pad.The connection pads portion 10 of p electrode 7, n electrode 8, p electrode is set on Si diode element 2 again.Above Si diode element 2, press sapphire substrate one side up, p electrode 5 and n electrode 6 direction down places GaNLED element 1.The n electrode 8 of the p electrode 5 of GaNLED element 1 and Si diode element 2 is by the miniature projection 12 of Au then, the n electrode 6 of GaNLED element 1 and the p electrode of Si diode element 27 are by the miniature projection 11 of Au, be electrically connected respectively, with ultra-violet solidified insulating resin 16 that GaNLED element 1 and Si diode element 2 is fixing simultaneously.Also have, the mechanical connection between GaNLED element 1 and the Si diode element 2 does not use ultra-violet solidified insulating resin 16, can be by miniature projection 11 and 12 welding are realized yet.Such welding will be explained below.The connection pads portion 10 of the p electrode of Si diode element 2 carries out line with lead frame 13a by Au line 17 and is connected.Also have, be equipped with the reflector 15 of light towards the top reflection side of the die pad of lead frame 13a.GaNLED element 1 by 15 of reflectors around.

Carried whole epoxy resin 18 molded package of fore-end of lead frame 13a, the 13b of above-mentioned GaNLED element 1 and Si diode element 2, constituted the LED lamp with light transmission.Also have, the light that is generated by above-mentioned GaNLED element 1 takes out from the top of sapphire substrate one side.For this reason, in the p of GaNLED element 1 electrode 5 one sides, do not need to resemble the transparency electrode (parts shown in the symbol 37 among Fig. 4 A, Fig. 4 B and Fig. 4 C) of the electric current diffusion usefulness that forms in the existing GaNLED element, only use the parts of the p electrode 5 of thick film, get final product as electric current diffusion usefulness.

Also have, the light that spills from the side of GaNLED element 1 is reflected upward by reflector 15, can improve the taking-up efficient of light.For this reason, the front end of reflector 15 at least should be than the light-emitting zone height of GaNLED element 1.

Figure 14 is the circuit diagram for the built-in protective circuit of the LED lamp that present embodiment is described.

As shown in figure 14, Si diode element 2 and GaNLED element 1 are for reversed polarity is connected, and promptly mutual p electrode is connected with the electrode of n electrode with the other side's reversed polarity, and this is in order not allow high voltage be applied on the GaNLED element 1 from lead frame one side.At this moment, the forward operating voltage of Si diode element 2 is 0.9V, and the reverse voltage arrival 0.9V that applies to GaNLED element 1 is promptly scabbled later on.Also have, because the reverse breakdown voltage of Si diode element 2 can be set near the 10V, the forward voltage that applies to GaNLED element 1 also can scabble near 10V.Like this, because the forward disintegration voltage value of GaNLED element 1 is about 100V, oppositely the disintegration voltage value is about 30V, by such formation, can guarantee to prevent because the damage of the caused GaNLED element 1 of the contour voltage application of static.

That is to say that if establish the forward disintegration voltage of GaNLED element 1, oppositely disintegration voltage is respectively Vf1, Vb1, the forward operating voltage of Si diode element 2, reverse breakdown voltage are respectively Vf2, Vb2, the operating voltage of GaNLED element 1 is VF, as long as:

Vf2＜Vb1

Vb2＜Vf1

Vb2＞VF

This relation is set up and is got final product.

Below, the detailed construction of LED lamp each several part of present embodiment and the manufacturing process of summary are described.

Figure 15 A and Figure 15 B are the vertical view of the GaNLED element 1 of expression present embodiment and the cutaway view of J-J line.As shown in the figure, GaNLED element 1 be on sapphire substrate 30 successively lamination GaN resilient coating 31, n type GaN layer 32, InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 are arranged, have the structure of dual isomery.Form above the n type GaN layer 32 by the hypomere portion of part and account for stepped that remaining most epimere portion forms seldom above only accounting for, on the n of hypomere portion type GaN layer 32, be formed with the n electrode of forming by Ti and Au 6.Also have, lamination has above-mentioned InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 successively on the n of epimere portion type GaN layer 32.On p type GaN layer 35, do not establish the transparency electrode of electric current diffusion usefulness then, and p electrode 5 directly is set.The planar dimension of GaNLED element 1 is the square that the length of side is about 0.28mm in the present embodiment.

Figure 16 A and Figure 16 B are the vertical view of the Si diode element 2 of expression present embodiment and the cutaway view of K-K line.Shown in Figure 16 A and Figure 16 B, in the n of this Si diode element 2 type silicon substrate 20, form p N-type semiconductor N zone 21, and reverse breakdown voltage is set near the 10V by mixing foreign ion selectively.Then, go up p electrode 7 and the n electrode 8 that forms Si diode element 2 in p N-type semiconductor N zone 21 and n type silicon substrate 20 (n N-type semiconductor N zone), the part of p electrode 7 is a connection pads portion 10.In addition, form n electrode 9 on below n type silicon substrate 20 in order to be electrically connected with lead frame.The planar dimension of Si diode element 2 is about 0.32mm * 0.45mm in the present embodiment.

Below, the order of carrying GaNLED element 1 on Si diode element 2 is described.

At first explanation, in LED lamp shown in Figure 13, the formation of the miniature projection of Au that is electrically connected between the electrode of Si diode element 2 and GaNLED element 1 order.Cover the resistive film that forms by photoetch operation apperance on p on Si diode element 2, the n electrode 7,8,, form miniature projection 11,12 respectively by only two electrodes 7,8 selectively being electroplated.Miniature projection 11,12 in the present embodiment is the mushroom-shaped of diameter 30 μ m, height 10 μ m.

Next, allow the p electrode 7 of Si diode element 2 facing to the n electrode 6 of GaNLED element 1 respectively, the n electrode 8 of Si diode element 2 is facing to the p electrode 5 of GaNLED element 1, between Si diode element and GaNLED element, put into ultra-violet solidified insulating resin 16, by carrying out ultraviolet irradiation while pushing down GaNLED element 1, two elements 1,2 is fixing, carry out simultaneously being electrically connected between the electrode of two elements 1,2.By implementing to connect operation, form electronic device and the paired composite component of optical device by the upside-down mounting of above miniature projection connection method.

After this, as shown in figure 13, after joining lead frame 13a on Ag paste 14 small pieces this composite component, carry out line with Au lead-in wire 17 between the connection pads portion 10 of p electrode 7 and the lead frame 13b and connect operation.In addition, after carrying out line connection operation, also can carry out above-mentioned upside-down mounting again and connect operation.

At last, carry out the resin-encapsulated operation, obtain the light-emitting device of state as shown in figure 13 with light penetrating ring epoxy resins 18.

According to present embodiment, as mentioned above, because Si diode element 2 constitutes the composite component that reversed polarity is connected with GaNLED element 1, when therefore between lead frame 13a, 13b, applying high voltage, to near the voltage of the reverse voltage forward voltage of Si diode element 2 that GaNLED element 1 applies, scabbled respectively near the voltage place of the forward voltage reverse breakdown voltage of Si diode element 2 that GaNLED element 1 applies, can guarantee to prevent because the damage of the caused GaNLED element 1 of static.

Also have, in the present embodiment, GaNLED element 1, owing to be to be contained on the Si diode element 2 by miniature projection connection method upside-down mounting is real, both form composite component, so need in order to implement go between bonding required face big connection pads portion like this can not make composite component integral miniaturization when connecting between the two, can dwindle not participating in luminous n electrode 6 and area on every side thereof simultaneously.Specifically, for present embodiment, n electrode 6 and area on every side thereof only are 1/15th of GaNLED element 1 surface area.And with respect to the existing GaNLED element 1 shown in Fig. 4 A, if the size of its element is the length of side is the square of 0.34mm, then do not participate in luminous n electrode 36 and area on every side thereof to account for element surface long-pending 1/2nd.Be the GaNLED element 1 of present embodiment, compare that although component size narrows down to 0.68 times, light-emitting area is increased to 1.26 times with the GaNLED element 1 shown in Fig. 4 A and Fig. 4 B.Therefore,, can reduce the cost, can increase luminous power simultaneously owing to reduced the area of compound semiconductor substrate at high price by implementing to connect operation by the upside-down mounting of miniature projection connection method.

Also have, in the present embodiment, can obtain to improve the advantage of luminous taking-up efficient from transparent sapphire substrate one side-draw light.

Also have, in the present embodiment, though p electrode 7 separates with connection pads portion 10, both also can wholely form.Present embodiment has ultra-violet solidified insulating resin 16 can be by the groove in the way easily and guarantee the advantage that stops to spreading of connection pads portion 10.Also have, formerly carry out line and connect when carrying out upside-down mounting again after the operation and connecting operation, integral body is made by the part and the connection pads portion 10 that form the miniature projection 11 of p electrode 7, and is more favourable than present embodiment.That what can not produce yet is bad even ultra-violet solidified insulating resin 16 spreads to connection pads portion 10, has the advantage that can allow connection pads portion 10 and p electrode 7 stably become same potential on the contrary.

Further, in the present embodiment, because the p electrode 5 of GaNLED element 1 so the light that the luminescent layer below p electrode 5 sends can be reflected upward by n electrode 8, can improve the taking-up efficient of light facing to the n electrode 8 of Si diode element 2.

Also have, in the above description, though be that miniature projection 11,12 is illustrated to form example on the p of Si diode element 2 electrode 7 and n electrode 8,, obviously, also can on the p of GaNLED element 1 electrode 5 and n electrode 6, form.

Also have, with the n electrode 8 of Si diode element 2 do as far as possible big after, facing to the p electrode 5 of GaNLED element 1 for well.The light that can spill from GaNLED element 1 side will reflect upward like this, thereby improve the taking-up efficient of light more.

Also have, in the present embodiment, though the p electrode of a top side of Si diode element 2 and n electrode are cut apart in same direction, promptly be divided into the rectangle that is parallel to each other, but the present invention is not limited to such embodiment, sees oblique cutting apart that from the plane perhaps curve segmentation also can.

Embodiment 10

Be on the Si diode element, to carry the GaNLED element in the foregoing description 9, in the present embodiment, the Si diode element that the film that is provided with on the GaNLED element constitutes.

Figure 17 is the cutaway view of the device portions in the LED lamp of only representing relevant present embodiment.Though omitted the state that on lead frame, carries, and the same state of Fig. 1 among the embodiment 1 carries on lead frame, finally carries out resin-encapsulated.

As shown in the drawing, with above-mentioned the 9th embodiment in have and form the interlayer dielectric 51 that constitutes by silicon oxide layer on the GaNLED element 1 of same structure, form silicon thin film more thereon, in silicon thin film, form p N-type semiconductor N zone 52 and n N-type semiconductor N zone 53.The formation of this silicon thin film is if utilize the TFT formation technology of liquid crystal device can be easy to finish.Then, be provided with the p electrode 54 and the n electrode 55 of diode element 50, wherein, p electrode 54 is imbedded and is formed on the n electrode 6 that is connected to GaNLED element 1 on the interlayer dielectric 51 in the connecting hole, is connected to simultaneously on the p N-type semiconductor N zone 52 of diode element 50; N electrode 55 is then imbedded and is formed on the p electrode 5 that is connected to GaNLED element 1 on the interlayer dielectric 51 in the connecting hole, is connected to simultaneously on the n N-type semiconductor N zone 53 of diode element 50.Then, among the p electrode 54 of diode element 50 and the n electrode 55 employing figure unillustrated by the lead-in wire bonding be connected on the lead frame.Also have, at this moment, the light that is generated by GaNLED element 1 takes out from the top by the lead frame reflection, but owing to the part that forms diode element 50 can be limited in the narrow and small scope, so can obtain desired taking-up efficient easily.

Even also can obtain and the foregoing description 9 such identical effects in the present embodiment.

Embodiment 11

Below, embodiment 11 is described, the light-emitting device of present embodiment has the Si diode element identical with embodiment 9, but the GaNLED element and the Si diode element of getting along well face, and carries on the silicon substrate.

Figure 18 is the cutaway view of the structure of the device portions in the LED lamp of only representing relevant present embodiment.Though omitted the state that carries on lead frame, the state same with the Figure 13 among the embodiment 9 carries on lead frame, finally carries out resin-encapsulated.

As shown in the drawing, Si diode element 2 forms in than the large-area n type silicon substrate 20 in the foregoing description 9.That is, in n type silicon substrate 20, optionally mix foreign ion and form p N-type semiconductor N zone 21, further, after forming interlayer dielectric 57, the p electrode 58 that formation and p N-type semiconductor N zone 21 join on interlayer dielectric 57.In addition, though do not draw in the drawings, be formed with in the part beyond the section shown in Figure 180 with n type silicon substrate 20 be the n electrode that n N-type semiconductor N zone joins.Also have, the reverse breakdown voltage of Si diode element 2 and forward voltage be set at on go back the identical value of embodiment 9.

On the other hand, on silicon substrate 20, placed GaNLED element 1 with the foregoing description 9 basic identical structures.But in the present embodiment, the n electrode 6 of GaNLED element 1 forms can implement to go between bonding big area like that.Then, the n electrode 6 of GaNLED element 1 and the p electrode 58 usefulness lead-in wire 59 of Si diode element 2 are connected, and in Figure 18, in the unillustrated part, the p electrode 5 of GaNLED element 1 and the n electrode of Si diode element 2 are connected with lead-in wire.In the present embodiment, take out light from the top of the p electrode 5 of GaNLED element 1.

In addition, the connection between each semiconductor regions of Si diode element 2 and each electrode of GaNLED element 1 also can form multilayered wiring structure the foregoing description 10 and finishes by resembling.

In the present embodiment, the densification of light-emitting device integral body, the effect that improves the extraction efficiency of light are compared less better with the foregoing description 9, as the method for not using miniature projection, but and the foregoing description 9 can bring into play withstand voltage effect equally to static etc.

Embodiment 12

Below, embodiment 12 is described, in the present embodiment, be on common insulated substrate, to form GaNLED element and diode element.

Figure 19 is the cutaway view of the device portions structure in the LED lamp of only representing relevant present embodiment.Though omitted the state that carries on lead frame, the state same with the Figure 13 among the embodiment 9 carries on lead frame, finally carries out resin-encapsulated.

As shown in the drawing, on sapphire substrate 30, be formed with GaNLED element 1 with the foregoing description 9 same structures.And, on sapphire substrate 30,, be provided with the diode element 60 that in silicon thin film, forms p N-type semiconductor N zone 61 and n N-type semiconductor N zone 62 back formations in the side of GaNLED element 1.In the formation of these sapphire substrate 30 silicon-ons, if utilize the TFT formation technology of liquid crystal device can be easy to finish.Then, being connected of the p N-type semiconductor N of diode element 60 zone 61 and GaNLED element 1, can form multilayered wiring structure the foregoing description 10 and finish by resembling, also can resemble to go back and finish by the lead-in wire bonding the embodiment 11.

In the present embodiment, because the fusing point height of sapphire substrate 30, thereby have and pile up the advantage that is easy to form monocrystalline silicon thin film behind the polysilicon film with the laser recrystallization method again.Also have, take out light,, also can keep high light and take out efficient even adopt lead-in wire bonding mode to connect the such formation of GaNLED element 1 and diode element 60 owing to can constitute easily from the sapphire substrate of below.

The variation of the foregoing description 9-12

Can adopt following variation for the foregoing description.

In the foregoing description 9,5 one-tenth shapes of n electrode 8 conducts of Si diode element 2 and the p electrode of GaNLED element 1 in the face of claiming, two electrodes almost can be constructed comprehensively relatively together.At this moment, the light that emits from the below of the p electrode 5 of GaNLED element 1 is reflected upward by the n electrode 8 of Si diode element 2, can seek further to improve the taking-up efficient of light.

In the foregoing description 12, sapphire substrate is as one of transparency carrier of the liquid crystal that supports liquid crystal device, and the light that emits from GaNLED element 1 goes out from sapphire substrate one side-draw, also can be used as the one of backlight of liquid crystal device.At this moment, also can allow electrostatic protection element and TFT synchronization action.By such structure, particularly can obtain the light-emitting device of using backlight of the high liquid crystal device of reliability.In addition, on glass substrates such as crystal glass, carried light-emitting component and the diode that is made of silicon thin film can also use as a side of the liquid crystal grip block of liquid crystal device.

In the various embodiments described above, though be to form lateral type pn diode as electrostatic protection element, the present invention is not limited to such embodiment.For example, various diodes such as longitudinal type pn diode, pin diode, Schottky bias diode, Zener diode, tunnel diode, Gunn diode also can be used as electrostatic protection element.Also have, utilize the Gunn diode of the gunn effect of compound semiconductor on the substrate of light-emitting component, to form.

Also have,, threshold voltage also can be set be adjusted into than the operating voltage height of light-emitting component and than forward disintegration voltage and the little field effect transistor of direction disintegration voltage as electrostatic protection element.

In the various embodiments described above, though as light-emitting component the light-emitting device with GaNLED element 1 only has been described, the present invention is not limited to such embodiment.For example, also can be the light-emitting device with laser diode element of GaN system, the light-emitting device that carries the light-emitting component that on the insulated substrate beyond the GaN system, is provided with.

Also have, in above-mentioned existing state shown in Figure 5, also can constitute mounting electrostatic protection element on the side of GaNLED element on the die pad, connect with lead-in wire between the two elements.At this moment, as electrostatic protection element, though also can utilize the diode that forms as embodiment 1 on silicon substrate, form silicon thin film by dielectric film on die pad, it also is feasible utilizing this silicon thin film to form diode.

The manufacture method of semiconductor light-emitting apparatus

Figure 20 comprises the skeleton diagram of an example of the semiconductor light-emitting apparatus of the flip chip type light-emitting component that is obtained by manufacture method of the present invention for expression.Though this semiconductor light-emitting apparatus is similar with device shown in Figure 13, associated element 2 might not be brought into play the element of electrostatic protective function exactly in following embodiment.Certainly, as associated element 2, when adopting the Si diode element to constitute as shown in Figure 2 circuit, as previously mentioned, associated element 2 uses as electrostatic protection element, can bring into play the high-tension defencive function of static.But,, might not need the structure of diode etc. if the associated element of Figure 20 2 has been the time spent of doing that easily lead frame 13a, 13b is connected with light-emitting component.

In the light-emitting device of Figure 20, associated element 2 and LED element 1 are in coincidence status, carry on the installation portion 15 of lead frame 13a.LED element 1 is pressed the inversion state configuration in the orientation up, the back side of light-transmitting substrate 1a, the p lateral electrode 5 that forms on the p of LED element 1 N-type semiconductor N zone and the n N-type semiconductor N zone and n lateral electrode 6 towards below.The back side of light-transmitting substrate 1a is risen as light and is taken out surface function, and the light that element 1 sends is emitted from the back side high efficiency of light-transmitting substrate 1a.

Below associated element 2, be formed with backplate 9.This backplate 9 is electrically connected with installation portion 15 by conductivity paste 14.Also have, on associated element 2, be formed with electrode 7,8, relative with the n lateral electrode 6 of semiconductor light-emitting elements 1 respectively with p lateral electrode 5.The n lateral electrode 6 of LED element 1 and p lateral electrode 5, the electrode 7,8 with the associated element 2 relative with it interconnects by miniature projection 11,12.

Surface at the electrode 7 of associated element 2 is formed with connection pads portion 10.Connection pads portion 10 links to each other with lead frame 13b by lead-in wire 17.These elements 1 and 2 are by translucent resin 18 molded package.

In the manufacture method of semiconductor light-emitting apparatus of the present invention, miniature projection by this miniature projection, carries out electricity/physical connection with semiconductor light-emitting elements and associated element after forming on the electrode of semiconductor light-emitting elements or on the electrode at associated element.At the electrode pair of two elements during, between two elements, can form and be equivalent to miniature projection high gap like that to contact.For this reason, two elements can not contact with the part beyond the miniature projection, and the bad short circuit in the time of can eliminating energising can provide a kind of rate of finished products good manufacture method.But, when connecting the electrode of two elements,,, make the gap turn narrow between the two elements because what times of miniature projection have damage to a certain degree according to method of attachment by miniature projection.For this reason, considering under the situation of this point that height with miniature projection forms higherly slightly for well.The height of preferred miniature projection is about 20-50 μ m.

The material of miniature projection roughly can be divided into scolding tin and Au class material.The material of the miniature projection among the present invention can use any in scolding tin and the Au class material, but uses Au class material better than scolding tin.This be because, when using Au class material, having the area that (1) form the electrode of miniature projection can dwindle, the formation method of (2) miniature projection is simple, (3) are easier to advantages such as connection by miniature projection two elements ratio.

The miniature projection of Au class can form with the post skill of handling needles or galvanoplastic.According to the post skill of handling needles, at first, after the front end englobement that will pass Au line capillaceous, with this head by being pressed on the electrode, Yi Bian on one side spherical fusing is welded on the electrode with ultrasonic wave and heat.After this, hold the Au line, after the stem portion of cutting off Au, form miniature projection.At this moment, the electrode of semiconductor light-emitting elements or associated element is formed by Au or Al.When above-mentioned electrode is formed by Au or Al, do not need to adopt special electrode structure, after the element testing operation, have the advantage that can only form good element.

But, according to the post skill of handling needles, be the Au line of 30 μ m even for example adopt diameter, electrode area also need be more than 100 μ m.

According to galvanoplastic, in the element forming process, need the operation of additional plated.Be example with the situation that on semiconductor light-emitting elements, forms miniature projection with galvanoplastic below, carry out more detailed explanation.That is, the substrate of semiconductor light-emitting elements (sapphire substrate) is gone up and is piled up the semiconductor laminated film, forms p N-type semiconductor N zone and n N-type semiconductor N zone at this.Then, lamination Ti layer and Au layer form the n electrode successively on the part in n N-type semiconductor N zone.After this, on whole of substrate successively behind lamination Ni layer and the Au layer, by the photoetch operation, forming one is being positioned at the zone above the n electrode part and is being positioned at the resistive film of the regional opening above the part of p N-type semiconductor N zone, carry out the plating of Au system at above-mentioned peristome, formation highly is the miniature projection about 15-30 μ m.After resistance is removed, only stay the n electrode and the p N-type semiconductor N zone that form miniature projection in Ni and Au layer, remainder is removed with etching.So just finished the semiconductor light-emitting elements that is formed with miniature projection.

On associated element, form miniature protruding in vain the time by galvanoplastic, when the electrode of associated element is made of the Au based material, can adopt the operation identical to form miniature projection with above-mentioned operation, when if this electrode is made of Al, need to form the shielded metal layer on the Al electrode, the formation method that forms miniature projection on the Al electrode of this and integrated circuit component is identical.

Adopt such electro-plating method, increase element worker ordinal number and need be, also have to make to form and miniaturely protrudingly twist required electrode area and reach minimum advantage in element testing method shortcoming such as work hard though have.For example, the diameter that forms the required electrode of the miniature projection of diameter 30 μ m, height 20 μ m is just enough about 60 μ m.Therefore, can dwindle size of component, reduce cost.Also have, the positional precision that miniature projection forms determines that by the position in the photoetch operation precision is determined, compares with the post pin, and is very good.

In the method for attachment by miniature projection, the whole bag of tricks can be enumerated at associated element and LED element, for example, four kinds of methods shown below can be enumerated.

First kind of method of attachment: Au-Au connection method or Au-Al connection method

In the method, the miniature projection that forms on electrode adopts heat, ultrasonic wave and pressure bonding to receive on the electrode of subtend.

Second kind of method of attachment: the post pin connects (SBB) method

After coating the conductivity paste on the miniature projection, contact the curing conductive paste with the electrode of subtend.Then, fill potting resin, cured resin.This method has the advantage of anti-external stress high reliability.Also have, when actual installation, be difficult for producing stress, can before encapsulation, detect.Repair easily.

The third method of attachment: ACF method

Adopt anisotropic conductive sheet/bonding agent to connect.Has the less advantage of process number.

The 4th kind of method of attachment: scolding tin connection method

On the electrode on miniature projection opposite, form the holder post, allow scolding tin reflux and connect by scolding tin.Fill encapsulants, be cured.Has the big advantage of bonding strength after the backflow.

Four kinds of methods of attachment of above-mentioned second-Di, being applicable to has the highdensity integrated circuit component face of many miniature projections to be installed on the circuit substrate alignment arrangements.But, these methods of attachment, the beat of finishing connection is longer, and production efficiency is lower.To this, first kind of method of attachment, owing to will miniature projection be melted with heat, ultrasonic wave and pressurization, though be not suitable for the installation that arranged in high density has the integrated circuit component of projection, but be specially adapted to resemble the present invention like this, have the situation of 2-3 miniature projection on the electrode of LED element with interval greater than 100 μ m.Also have, implement this first kind of needed time of method of attachment and only be 0.5 second very short, from the viewpoint of production efficiency, be the fabulous method that LED element etc. is installed.If do not need to pay attention to production efficiency, also can adopt four kinds of methods of attachment of second-Di.

With reference to the accompanying drawings, describe the embodiment of the manufacture method of foundation semiconductor light-emitting apparatus of the present invention in detail.

Embodiment 13

With reference to the flow chart of Figure 21, the embodiment of Figure 20 device producing method is described.

At first, implement LED element manufacturing process, carry out LED in the S1 step and launch operation.LED launches operation, is in the final stage of the manufacturing process of substrate level, is separated into the operation that single chip obtains LED element 1 from substrate.In the present embodiment, the LED element 1 shown in Figure 31 A and Figure 31 B uses as semiconductor light-emitting elements.This LED element 1 is for example by such manufacturing shown below.

At first, the order by GaN resilient coating 31, n type GaN layer 32, InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 begins lamination from substrate-side on sapphire substrate 1a.On sapphire substrate 1a, form the semiconductor lamination structure that comprises dual isomery structure like this.

Part to above-mentioned semiconductor lamination structure is carried out etching from its surface is through to the inside of n type GaN layer 32, obtains the structure of the such shape shown in Figure 31 A and Figure 31 B.By this etching, on n type GaN layer 32, be processed into and form stepped by epimere portion and hypomere portion.In the epimere portion on n type GaN layer 32, InGaN active layer 33, p type AlGaN layer 34 and p type GaN layer 35 do not have etchedly to remain same as before.

After this etching, the p electrode 5 that formation is made up of Ni and Au on p type GaN layer 35.Form the n electrode of forming by Ti and Au 6 in the hypomere portion on n type GaN layer 32.After this, in the present embodiment, on n electrode 6, form post pin 11, on p electrode 5, form post pin 12a and 12b.The formation of post pin 11,12a and 12b is undertaken by the aforesaid post skill of handling needles.

Above-mentioned operation is used the sapphire substrate 1a of substrate shape, forms a plurality of LED elements 1 on this sapphire substrate 1a simultaneously.For this reason, more than 1 of such as shown in FIG. LED elements are formed on the sapphire substrate 1a of substrate shape.

In the present embodiment, before formation post pin, detect a plurality of LED elements 1 that on the sapphire substrate 1a of substrate shape, form.Detect according to this,, then on this bad LED element 1, do not form the post pin if found bad LED element 1.The post pin just forms on qualified component like this.Allow the miniature projection of LED element 1 towards the below, sapphire substrate 1a facing to thin slice, is posted in the LED element 1 on the sapphire substrate 1a on the thin slice.Then, sapphire substrate 1a is rule, fractures.After this, with thin slice along cross directional stretch, each LED element 1 of lateral separation (LED launches operation).

Secondly, in the grade separation operation in S2 step shown in Figure 21, with LED element 1 according to brightness degree and wavelength grade separation after, the chip of carrying out the S3 step connects operation.Specifically, at first, prepare the substrate (silicon chip) that a plurality of Si diode elements 2 are arranged in ranks.To each the Si diode element 2 configuration LED element 1 in this substrate.Figure 27 is the model that is illustrated in the relation between the anchor clamps 100 that chip connects silicon chip 90 in the operation, LED element 1 and carrying LED element 1.

Illustrate that in more detail this chip connects operation, at first,, allow LED element 1 near the substrate 90 that comprises Si diode element 2 with facing downwards of the miniature projection of formation of LED element 1.Then, the miniature projection of LED element 1 is aimed at the position of the electrode 7,8 (not drawing) of Si diode element 2 in Figure 27, Yi Bian allow miniature projection 11,12a, 12b and electrode 7,8 contact, Yi Bian add heat, ultrasonic wave and weight.This aforesaid just first kind of method of attachment.Like this, by miniature projection is welded on the electrode 7,8, LED element 1 is connected on the Si diode element 2 by miniature projection.According to this connection, LED element 1 is by miniature projection electricity/physical fixation (chip connection operation) to Si diode element 2.The beat that chip connects is short, the identification of LED element, transports, aligned position, is connected in 3 seconds and just can finishes.The precision of its position alignment is below 15 μ m.Connect by chip, vacate the gap of 20 μ m between LED element 1 and the Si diode element 2, hardly bad short circuit can take place.

After this, at the cutting action in S4 step shown in Figure 21, after the substrate of corresponding 2 one-tenth integration states of LED element 1 and Si diode element is posted on the thin slice, the integration structure is become chip from substrate separation through cutting.Figure 28 is for representing in the cutting action model of relation between substrate 90 and the cutting blade 101.

In the S5 of Figure 21 transfer operation in step, integration constructed transfer in the pallet after, connect in the operations (D/B operation) at the small pieces in S6 step the configuration of integration structure be fixed on the installation portion 15 of lead frame.At this moment, allow the backplate 9 of Si diode element 2 by conductivity paste 14 facing to installation portion 15, like this with the backplate 9 electricity/physical connection of Si diode element 2 to installation portion 15.

In the S7 lead-in wire bond sequence (W/B operation) in step, connect with line 17 between the connection pads portion 10 of Si diode element 2 and another lead frame 13b.After this, the inscape of the upper end of lead frame is molded and shaped with light-transmissive resin 18, obtains the semiconductor light-emitting apparatus of Figure 20.

Like this, in the present embodiment, miniature projection is after forming with the post skill of handling needles on the electrode of LED element one side, and the LED element is connected on the Si diode element of substrate shape after the chipization.

Embodiment 14

With reference to the flow chart of Figure 22, another embodiment of manufacture method of the present invention is described.Present embodiment be characterised in that miniature projection form with the post skill of handling needles on the electrode of LED element one side and with above-mentioned first kind of method of attachment lead frame installation portion on carry out the chip join of LED element and Si diode element.

At first, after the LED in the S11 step of having carried out Figure 22 launches operation, in the grade separation operation in S12 step shown in Figure 22, LED element 1 is classified according to brightness degree and wavelength grade.

Secondly, allow the backplate 9 of the substrate that comprises Si diode element 2 aim at thin slices, substrate is posted on the thin slice.In S13 step,, from substrate, isolate chip in the step at S14 with after the substrate cutting, with thin slice along cross directional stretch (Zener expansion operation).

, in the step Si diode element 2 is disposed on the installation portion 15 that is fixed to lead frame (with reference to Figure 20) at S15.At this moment, allow the backplate 9 of Si diode element 2 aim at installation portion 15 by conductivity paste 14, the backplate 9 of Si diode element 2 and installation portion 15 carry out electricity/physical connection (Zener D/B operation) like this.

Chip in the S16 step connects in the operation.For the 2 configuration LED elements 1 of the Si diode element on the installation portion 15.Say in detail, at first,, allow LED element 1 near Si diode element 2 with facing downwards of the miniature projection of formation of LED element 1.Then, the miniature projection of LED element 1 is aimed at the position of the electrode 7,8 of Si diode element 2, Yi Bian allow miniature projection 11,12a, 12b and electrode 7,8 contact, Yi Bian add heat, ultrasonic wave and pressurization.Like this, by miniature projection is welded on the electrode 7,8, LED element 1 is connected on the Si diode element 2 by miniature projection.According to this connection, LED element 1 by miniature projection electricity/physical fixation to Si diode element 2.Figure 29 is LED element 1 and Si diode element 2 in this stage of expression.

Next, the lead-in wire in the S17 step connects in the operation (W/B operation), connects with lead-in wire 17 between the connection pads portion 10 of Si diode element 2 and another lead frame 13b.Like this, obtain the semiconductor light-emitting apparatus of Figure 20.

Embodiment 15

With reference to the flow chart of Figure 23, an embodiment again of manufacture method of the present invention is described.Present embodiment is characterised in that miniature projection forms with the post skill of handling needles on the electrode of the Si of substrate condition diode element one side, carry out the chip connection between the Si diode element of LED element and substrate condition with above-mentioned first kind of method of attachment.

At first, after the LED that has carried out the S21 step launches operation,, LED element 1 is classified according to brightness degree and wavelength grade in the S22 grade separation operation in step.

Secondly, the post pin in the S23 step forms in the operation, forms post pin 11,12 on p lateral electrode 7 that is included in on-chip Si diode element 2 and n lateral electrode 8.Figure 30 is illustrated in the operation that forms the post pin model of the relation between substrate 90 and the capillary 102.Also have, Figure 33 A and Figure 33 B are for representing the vertical view and the cutaway view of the Si diode element 2 after the post pin forms.Si diode element 2 is optionally to mix foreign ion to form p N-type semiconductor N zone 22 in n type silicon substrate 21, and its reverse breakdown voltage is set near the 10V.On the p N-type semiconductor N zone 22 and n type silicon substrate (n N-type semiconductor N zone) 21 of the upside of Si diode element 2, form the p electrode 7 and the n electrode 8 that constitute by Al respectively. Post pin 11 and 12 forms on p lateral electrode 7 and n lateral electrode 8 respectively.The part of p lateral electrode 7 is as the function of connection pads portion 10.The backplate 9 that formation is made of Au below Si diode element 2.

Next, carry out the chip in the S24 step of Figure 23 and connect operation.Specifically, for each the Si diode element 2 in the substrate, the sorted LED element 1 of configuration level.Say in detail, at first,, allow LED element 1 near the substrate 90 that comprises Si diode element 2 with facing downwards that the electrode of LED element 1 forms.Then, the position of the electrode 7,8 of the electrode alignment Si diode element 2 of LED element 1, Yi Bian allow the electrode of LED element 1 and the miniature projection 11,12 of Si diode element 2 contact, Yi Bian add heat, ultrasonic wave and pressurization.Like this, by miniature projection is welded on the electrode, LED element 1 is connected on the Si diode element 2 by miniature projection.According to this connection, LED element 1 is by miniature projection electricity/physical fixation (chip connection operation) to Si diode element 2.

Below, implement to go on foot the S28 operation in step by the method identical from S25 with embodiment 13 explanations.

Embodiment 16

With reference to the flow chart of Figure 24, the another embodiment of manufacture method of the present invention is described.Present embodiment is characterised in that the LED element of miniature projection after forming with the post skill of handling needles on the electrode of the Si of substrate condition diode element one side, carry out chipization on the installation portion of above-mentioned first kind of method of attachment at lead frame carries out chip with the Si diode element and be connected.

At first, after the LED that has carried out the S31 step launches operation, in the S32 grade separation operation in step, LED element 1 is classified according to brightness degree and wavelength grade.

Secondly, the post pin in the S33 step forms in the operation, forms miniature projection 11,12 (with reference to Figure 30) on the p lateral electrode 7 of each the Si diode element 2 that comprises on the substrate and n lateral electrode 8.

Next, allow the backplate 9 of the substrate that comprises Si diode element 2 aim at thin slices, substrate is posted on the thin slice.In S34 step,, from substrate, isolate chip in the step at S35 with after the substrate cutting, with thin slice along cross directional stretch (Zener expansion operation).

, in the step 2 configurations of Si diode element are fixed on the installation portion 15 of lead frame 13a at S35.At this moment, allow the backplate 9 of Si diode element 2 aim at installation portion 15 by conductivity paste 14, the backplate 9 of Si diode element 2 and installation portion 15 carry out electricity/physical connection (Zener D/B operation) like this.

Chip in the S37 step connects in the operation, for the 2 configuration LED elements 1 of the Si diode element on the installation portion 15.Say in detail, at first,, allow LED element 1 near Si diode element 2 with facing downwards that the electrode of LED element 1 forms.Then, the position of the electrode 7,8 of the electrode alignment Si diode element 2 of LED element 1, Yi Bian allow the electrode of LED element 1 contact with miniature projection 11,12, Yi Bian add heat, ultrasonic wave and pressurization.Like this, by miniature projection is welded on the electrode, LED element 1 is connected on the Si diode element 2 by miniature projection.According to this connection, LED element 1 carries out electricity/physical fixation by miniature projection and Si diode element 2.

In the S37 lead-in wire bond sequence (W/B operation) in step, connect with lead-in wire 17 between the connection pads portion 10 of Si diode element 2 and another lead frame 13b.Like this, obtain the semiconductor light-emitting apparatus of Figure 20.

Embodiment 17

In embodiment 13 (Figure 21), miniature projection is to form on the electrode of LED element with the post skill of handling needles, and in the present embodiment, miniature projection is to form on the electrode of LED element with the Au galvanoplastic.Others, since identical with embodiment 13, its detailed description omitted.

Figure 32 A and Figure 32 B are respectively expression forms LED element 1 behind the miniature projection with galvanoplastic vertical view and cutaway view.

The structure of the element of LED shown in the figure 1 is identical with the structure of the LED element 1 shown in Figure 31 A and Figure 31 B in essence; difference is; miniature projection is that Au electroplates projection, formed diaphragm 39 on LED element 1 surface, and the formation electrode of n electrode 6 is less.

Embodiment 18

In embodiment 14 (Figure 22), miniature projection is to form on the electrode of LED element with the post skill of handling needles, and in the present embodiment, miniature projection is to form on the electrode of LED element with the Au galvanoplastic.Others, since identical with embodiment 14, its detailed description omitted.

Embodiment 19

Figure 25 is the flow chart of expression present embodiment.It is the operation that forms on the electrode of the Si of substrate condition diode element with the Au galvanoplastic that the manufacture method of present embodiment comprises miniature projection.In addition, identical with embodiment 15.That is, the LED that carries out S41 step successively launches that operation, the grade separation operation in S42 step, the plating projection in S43 step form operation, the chip in S44 step connects operation, the cutting action in S45 step, the transfer operation in S46 step, the D/B operation in S47 step, the W/B operation in S48 step.

Embodiment 20

Figure 26 is the flow chart of expression present embodiment.It is the operation that forms on the electrode of the Si of substrate condition diode element with the Au galvanoplastic that the manufacture method of present embodiment comprises miniature projection.In addition, identical with embodiment 6.That is, the LED that carries out S51 step successively launches operation, the grade separation operation in S52 step, the plating projection in S53 step and forms operation, the cutting action in S54 step, the Zener in S55 step and launch operation, the Zener D/B operation in S56 step, the chip in S57 step and connect operation, the W/B operation in S58 step.

In flip type semiconductor light-emitting device as described above, because being main light, sapphire substrate one side takes out face, when forming semiconductor light-emitting apparatus on the substrate, can become light in an opposite side and take out face with detector.Like this, even light takes out face in the opposite side of detector, what also can spill to a certain degree light forming electrode one side, though also can detect this light with detector, because whole deficiency in light quantity, can not high-acruracy survey light wavelength and brightness.

To this, in order under the state that forms semiconductor light-emitting elements on the substrate, to carry out the mensuration of light characteristic with detector, for example by in a side setting that forms electrode in order to take out the peristome of light, increase light quantity, this is a kind of effective means.

But in order to form such peristome, except that the electrode forming process of semiconductor light-emitting elements will become the complexity, the dimensional accuracy of peristome may be dispersed in photoetch operation and etching work procedure, influences the mensuration of high-precision light characteristic.

Embodiment 21

With reference to Figure 34, the another embodiment of manufacture method of the present invention is described.

In the present embodiment, miniature projection is to form on the electrode of associated element at the Si of substrate condition diode element with the post skill of handling needles, after the semiconductor light-emitting elements of chipization is connected on the associated element, carries out light characteristic and detects.

At first, after the LED that has carried out the S61 step launched operation, the post pin in the S62 step formed in the operation, formed post pin 11,12 on the p lateral electrode 7 of the Si diode element 2 that comprises on the substrate and n lateral electrode 8.

Secondly, carry out the chip in S63 step and connect operation.Specifically, for each the Si diode element 2 in the substrate, the sorted LED element 1 of configuration level.Say in detail, at first,, allow LED element 1 near the substrate that comprises Si diode element 2 with facing downwards that the electrode of LED element 1 forms.Then, the position of the electrode 7,8 of the electrode alignment Si diode element 2 of LED element 1, Yi Bian allow the electrode of LED element 1 and the miniature projection 11,12 of Si diode element 2 contact, Yi Bian add heat, ultrasonic wave and weight.Like this, by miniature projection is welded on the electrode, LED element 1 is connected on the Si diode element 2 by miniature projection.According to this connection, LED element 1 carries out electricity/physical fixation (chip is connected operation) by miniature projection with Si diode element 2.

At this, flip type semiconductor light-emitting component 1 chip is connected on the Si diode element 2 of substrate condition becomes integral body.At this moment, semiconductor light-emitting elements 1 becomes the posture of sapphire substrate 1a towards the top.

Next, in the step, substrate is placed on the testboard of probe, allows probe contact the connection pads portion 10 of associated element 2, between testboard and probe, switch at S64.Figure 35 is the relation between substrate 90, probe 102 and the photodetector 105 that is illustrated in this stage.After the energising, semiconductor light-emitting elements is luminous, and the light that becomes the luminosity maximum above the sapphire substrate 1a takes out face.For this reason, the light quantity that directive is configured in the detector 105 above the substrate is enough, can carry out its wavelength of high-precision measuring and brightness.And on substrate 90,, can high efficiency measure by certain semiconductor light-emitting elements in aggregates 1 that is being spaced.

After the detection operation of light characteristic, in the S65 of Figure 34 goes on foot, substrate is posted on the thin slice, become chip (with reference to Figure 28) with cutter sweep through cutting and separating.The grade separation that carries out wavelength and brightness in the S66 step, the transfer of integration structure is in pallet.

Further, in S67 step,, integrated element is electrically connected on the installation portion 15 of lead frame 13a by conductivity paste 14 and fixing (D/B) according to the backplate 9 of associated element 2 down.

Secondarily, in S68 step, between the connection pads portion 10 of associated element 2 and another lead frame 13b, connect (W/B), at last with lead-in wire 17, with potting resin 18 encapsulation, obtain carrying the semiconductor light-emitting apparatus (Figure 20) of the semiconductor light-emitting elements 1 of flip chip type.

In the manufacture method of present embodiment,,, also can advance light characteristic in the same way and detect even on electrode one side of semiconductor light-emitting elements 1, form though the post pin is to form with the post skill of handling needles on electrode one side of associated element 2.

In the manufacture method of present embodiment, semiconductor light-emitting elements 1 is connected with the electrode of associated element 2 by miniature projection 11,12, becomes sapphire substrate 1a posture up.Therefore, in carry out the light characteristic detection with probe, the light that becomes the luminosity maximum above the sapphire substrate 1a takes out face, and the light quantity of directed toward detector D direction is enough, can carry out its emission wavelength of high-precision measuring and luminosity.

Like this, the surface of the transparency carrier of an opposite side relative with the face that forms p side and n lateral electrode is that the big light of luminosity takes out face, because by the connection of miniature projection between the enterprising column electrode of associated element, become posture up, the part that such chip can be connected is as detected object.Therefore, in carry out light characteristic detection operation with probe, can obtain enough light, therefore can carry out high-precision wavelength and brightness measuring, obtain high-quality light-emitting component from light taking-up face.

Also have, on substrate, press the light-emitting component of certain spaced one-tenth integration, because its light taking-up face is in posture up, so in carry out the light characteristic detection with probe, can high efficiency and carry out the mensuration of emission wavelength and luminosity accurately, improve rate of finished products.

As mentioned above, in the manufacture method of the embodiment of the invention, a plurality of associated elements become 2 of associated element of the substrate condition that the ranks shape forms independently on the electrode, the p side of semiconductor light-emitting elements that is electrically connected shaped like chips by miniature projection is implemented light characteristic and is detected operation and grade separation operation with the n lateral electrode and after becoming integration (chip is connected operation).According to this method, on substrate by the light-emitting component of certain spaced one-tenth integration because its light taking-up face is in posture up, can high efficiency and carry out the mensuration that light characteristic is wavelength and brightness accurately.

But when carrying out light characteristic detection operation, associated element does not need to be on the substrate condition, and associated element also can chipization.The back side of the transparency carrier of light-emitting component, be that the big light of luminosity takes out face, towards the direction of photodetector, as long as light-emitting component is connected on the associated element by miniature projection, just can obtain enough light, the mensuration that can carry out wavelength and brightness accurately from light taking-up face.

As discussed above, according to light-emitting component of the present invention,, can not need connection pads portion, so can realize the miniaturization of element and improve brightness by adopting miniature projection.

Also have,, when the detection operation of the light-emitting component of upside-down mounting structure and assembling procedure, eliminated the variety of issue that may occur, can implement accessible detection and assembling with miniature projection according to light-emitting component of the present invention.

According to semiconductor light-emitting apparatus of the present invention, provide a kind of and have the semiconductor light-emitting elements that is arranged on the insulated substrate, keep the high reliability light-emitting device that prevents the function of the destructions that high voltage applied such as static in the while.

Manufacture method according to semiconductor light-emitting apparatus of the present invention; as GaN is the LED element; for having the p N-type semiconductor N zone that on insulated substrate, forms and the light-emitting component in n N-type semiconductor N zone; can realize when applying high voltage between this p N-type semiconductor N zone and n N-type semiconductor N zone that bypass two semiconductor regions are connected in parallel is the structure of the electrostatic protection elements such as diode element of circulating current, can high finished product rate ground makes the high reliability light-emitting device that is formed on the insulation board and has the function that prevents that static etc. from destroying.Further, by working hard, can make the light-emitting device miniaturization and improve the taking-up efficient of light at the status of electrically connecting of light-emitting device and electrostatic protection element or aspect the light harvesting means of the light of light-emitting component.

The manufacture method of semiconductor light-emitting apparatus of the present invention comprises when being in associated element under the substrate condition and connecting the operation of semiconductor light-emitting elements, can adopt semiconductor elements such as silicon diode easily as associated element.Semiconductor elements such as silicon diode adopt silicon chip a plurality of manufacturings simultaneously.In substrate, press ranks when regularly arranged when associated element, can carry out chip easily and connect operation.

When semiconductor light-emitting elements one side formed the post pin, the electrode of semiconductor light-emitting elements adopted Au or Al to constitute.Do like this, the electrode structure that unnecessary employing is special has the advantage that only element of qualified product is formed miniature projection after the LED element testing is over.But, associated element in relative substrate condition connects in the method for semiconductor light-emitting elements, after the connection, adopt method such as cutting will become whole associated element to become chip with semiconductor light-emitting elements from substrate separation, if the position alignment precision when connecting is bad, cutting might the contact semiconductor light-emitting component with cutting knife during cutting.

To this, be in for not being in substrate condition for the associated element of separate state, when connecting semiconductor light-emitting elements by miniature projection, position alignment precision can have the bigger degree of freedom.

When forming miniature projection with plating, can make the chip size miniaturization, reduce cost.Also have, the positional precision that forms miniature projection operation is better than the positional precision that forms post pin operation.

Form the method for post pin when being arranged on the substrate,, can handle semiconductor light-emitting elements easily by on associated element, forming the post pin according to associated element.

The present invention can will obtain luminous light-emitting component miniaturization by the semiconductor multi layer film that is formed on the insulating properties substrate, adopts the associated element that can bring into play the function of protection light-emitting component from electrostatic breakdown simultaneously, can realize the compact package of upside-down mounting structure.Like this, the present invention provides a kind of light-emitting device of high brightness of the excellence of producing in batches in the field of light-emitting devices such as LED lamp.

Claims (17)

1. light-emitting device is characterized in that including:

Light-emitting component, the p N-type semiconductor N zone that have transparency carrier, on the zone of the part among the n N-type semiconductor N zone that forms on this transparency carrier and this n N-type semiconductor N zone, forms, and light-emitting component according in described p N-type semiconductor N zone-the interregional voltage that applies of n N-type semiconductor N and luminous;

Electrostatic protection element; It has two utmost point sections that are electrically connected respectively with described p-type semiconductor regions and the described N-shaped semiconductor regions of described light-emitting component; Described two utmost point sections are first utmost point section that is connected with described N-shaped semiconductor regions and second utmost point section that is connected with described p-type semiconductor regions; When the described p-type semiconductor regions of described light-emitting component-when described N-shaped semiconductor regions receives the voltage that has surpassed the assigned voltage that is less than or equal to disintegration voltage each other; Electrostatic protection element circulates between described two utmost point sections by electric current

Described light-emitting component and described electrostatic protection element are in overlapped state,

Described electrostatic protection element; be being 1 diode of positive direction to the direction of described second utmost point portion circulating current from described first utmost point portion; and on the face relative, has first, second electrode that is connected respectively to described first, second utmost point portion with described light-emitting component

Described light-emitting component has p electrode that is connected with described p N-type semiconductor N zone and the n electrode that is connected with described n N-type semiconductor N zone on described light-emitting component,

Between the p electrode of described light-emitting component and second electrode of described electrostatic protection element; and between first electrode of the n electrode of described light-emitting component and described electrostatic protection element; all be electrically connected, and described transparency carrier is placed as top by the face with an opposite side with electrode forming surface by miniature projection.

2. light-emitting device according to claim 1; it is characterized in that described electrostatic protection element; constituting from described first utmost point portion becomes than its positive direction of circulating current easily in the other direction to the direction of described second utmost point portion circulating current; be electrically connected between the p N-type semiconductor N zone of described light-emitting component and described second utmost point of described electrostatic protection element, be electrically connected between the n N-type semiconductor N zone of described light-emitting component and described first electrode of described electrostatic protection element.

3. light-emitting device according to claim 2 is characterized in that the forward operating voltage of described diode is littler than the reverse disintegration voltage of described light-emitting component, and the reverse breakdown voltage of described diode is littler than the forward disintegration voltage of described light-emitting component.

4. light-emitting device according to claim 1 is characterized in that described light-emitting component is mechanically connected on the described electrostatic protection element by bonding agent;

At least one side in described first and second electrodes of described electrostatic protection element is divided into p electrode or n electrode zone that is connected and the connection pads zone that is connected with external component with lead-in wire by described miniature projection and described light-emitting component.

5. light-emitting device according to claim 1 is characterized in that described light-emitting component and described electrostatic protection element carry out mechanical connection by bonding agent;

Described first and second electrodes of described electrostatic protection element are done as a wholely to constitute by be divided into a plurality of rectangular portion branch on a certain direction.

6. light-emitting device according to claim 1 is characterized in that described light-emitting component and described electrostatic protection element carry out mechanical connection by bonding agent;

Be formed with on every side groove or the protuberance that there are described adhesive region in first and second electrodes that surround described electrostatic protection element.

7. light-emitting device according to claim 1 is characterized in that described light-emitting component carries on described electrostatic protection element;

Any is formed in the light-emitting zone overlapping areas with described light-emitting component, and allows the light that sends from light-emitting zone reflect upward in first electrode of described electrostatic protection element and second electrode.

8. according to the described light-emitting device of arbitrary claim among the claim 1-7, it is characterized in that described diode is to have near form described first utmost point portion and second one side of utmost point portion in semiconductor regions the p N-type semiconductor N zone and the lateral type diode in n N-type semiconductor N zone.

9. light-emitting device according to claim 1 is characterized in that described electrostatic protection element is made of the semiconductive thin film that intervention interlayer dielectric on the described light-emitting component forms.

10. light-emitting device according to claim 1 is characterized in that described light-emitting component is the light-emitting component backlight that is used for liquid crystal device.

11., it is characterized in that described light-emitting component and described electrostatic protection element are housed in the common shell according to the described light-emitting device of arbitrary claim among the claim 1-7 or 9,10.

12. light-emitting device according to claim 1, it is characterized in that further comprising be arranged at least described light-emitting component around, be the reflection of light body of reflection from described light-emitting component emission.

13. light-emitting device according to claim 12, it is higher than the luminous zone of described light-emitting component at least to it is characterized in that described reflector constitutes its upper end.

14. according to claim 12 or 13 described light-emitting devices, it is characterized in that described reflector is installed in the side of the die pad of metal wire, described electrostatic protection element carries on the die pad of described metal wire.

15. light-emitting device according to claim 1 is characterized in that described light-emitting component, is made of GaN based compound semiconductor layer.

16. light-emitting device according to claim 1, it is characterized in that between second electrode of the p electrode of described light-emitting component and described electrostatic protection element, and between first electrode of the n electrode of described light-emitting component and described electrostatic protection element, any all carries out mechanical connection by miniature projection;

At least one side in first and second electrodes of described electrostatic protection element has zone that is connected by the p electrode of described miniature projection and described light-emitting component or n electrode and the connection pads zone that is connected with external component by lead-in wire.

17., it is characterized in that on the opposite face of formed of first and second electrodes of described electrostatic protection element, being formed with third electrode according to claim 1 or 16 described light-emitting devices;

Described third electrode be with described first and second electrodes in do not have the electrode in described connection pads zone to have same polarity electrode.

Images