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CN109616460A - 电力用半导体装置 - Google Patents

电力用半导体装置 Download PDF

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Publication number
CN109616460A
CN109616460A CN201811152150.9A CN201811152150A CN109616460A CN 109616460 A CN109616460 A CN 109616460A CN 201811152150 A CN201811152150 A CN 201811152150A CN 109616460 A CN109616460 A CN 109616460A
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CN
China
Prior art keywords
bonding layer
resin
semiconductor element
semiconductor device
power semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201811152150.9A
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English (en)
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CN109616460B (zh
Inventor
熊田翔
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN109616460A publication Critical patent/CN109616460A/zh
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Publication of CN109616460B publication Critical patent/CN109616460B/zh
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

本发明的目的在于提供能够使接合层和树脂的接合强度提高的技术。电力用半导体装置具有：配线部件(1)；半导体元件(2)；接合层(3)，其将配线部件和半导体元件接合；以及树脂(5)，其将配线部件(1)、半导体元件(2)及接合层(3)覆盖。接合层(3)包含第1接合层(31s)，该第1接合层(31s)与树脂(5)相邻地设置，该第1接合层具有由树脂(5)填充的空隙(31sh)。树脂(5)所包含的填料(5f)的最大宽度比第1接合层(31s)的空隙(31sh)的最小直径大。

Description

电力用半导体装置
技术领域
本发明涉及半导体元件接合于配线部件的电力用半导体装置。
背景技术
在半导体装置中，从工业用设备至家用电器及信息终端，电力用半导体装置被广泛用于设备的主电力(功率)的控制，特别是在输送设备等中被要求高可靠性。另一方面，取代现有的由硅(Si)构成的半导体元件，具有由碳化硅(SiC)等宽带隙半导体构成的半导体元件的电力用半导体装置的开发不断发展，电力用半导体装置的高功率密度化及高温动作化不断发展。
为了提高高温动作时的接合可靠性，不仅需要使半导体元件本身的耐热性提高，还需要提高将半导体元件与电路部件接合的接合材料的可靠性。因此，提出了使用所谓的烧结接合的电力用半导体装置的制造方法，烧结接合是使用含有烧结金属体的接合材料将半导体元件与电路基板、散热器等电路部件进行接合(例如，专利文献1)。
另外，通常来说，金属颗粒如果颗粒粒径比规定的尺寸小，则与块状金属相比具有非常活跃的表面状态，容易向减少表面能的方向进行反应。因此，在用于烧结接合的接合材料中，含有从纳米数量级至几微米数量级的烧结性金属颗粒。根据如上所述的接合材料，与块状金属的熔点相比，该金属颗粒以低温进行熔融及凝固，但在接合材料的接合后不达到块状金属的熔点则不会再熔融。因此，如果使用烧结性金属颗粒的烧结接合，则能够进行比块状金属等的熔点低的温度下的接合，因此得到使与接合温度的上升相伴的部件的损伤、制造成本的增加得到了抑制、具有比接合温度高的耐热性的电力用半导体装置。
另外，对于反应性高的烧结性金属颗粒，为了抑制接合前的状态下的反应的进行而由有机保护膜覆盖。该有机保护膜通过接合时的加热而被分解及去除，金属颗粒彼此的接触得到促进，从而进行烧结，能够进行接合。
专利文献1：日本特开2011－249257号公报
但是，在使用烧结性金属颗粒，将半导体元件与配线部件接合的传递模塑型功率模块中存在如下问题，即，烧结金属体和树脂的粘接强度不足，在功率模块动作时，树脂从烧结金属体等的接合层剥离。
发明内容
因此，本发明就是鉴于上述这样的问题而提出的，其目的在于提供能够使接合层和树脂的接合强度提高的技术。
本发明所涉及的电力用半导体装置具有：配线部件；半导体元件；接合层，其将所述配线部件和所述半导体元件接合；以及树脂，其将所述配线部件、所述半导体元件及所述接合层覆盖，所述接合层包含第1接合层，该第1接合层与所述树脂相邻地设置，该第1接合层具有由所述树脂填充的空隙，所述树脂所包含的填料的最大宽度比所述第1接合层的所述空隙的最小直径大。
发明的效果
根据本发明，树脂所包含的填料的最大宽度比第1接合层的空隙的最小直径大。根据如上所述的结构，能够提高树脂相对于第1接合层的锚固效应，因此能够使接合层和树脂的粘接强度提高。
附图说明
图1是表示实施方式1所涉及的电力用半导体装置的要部的结构的俯视图。
图2是图1的A－A线的剖视图。
图3是表示实施方式1所涉及的电力用半导体装置的主要制造工序的流程图。
图4是表示接合层和树脂之间的接合强度与接合层的空隙率的关系的示意图。
图5是将传递成型后的第1接合层放大的示意图。
图6是将传递成型后的第1接合层放大的示意图。
图7是表示实施方式1所涉及的电力用半导体装置的要部的其他结构的俯视图。
图8是表示实施方式2所涉及的电力用半导体装置的要部的结构的俯视图。
图9是图8的A－A线的剖视图。
标号的说明
1配线部件，2半导体元件，3接合层，5树脂，5f填料，31s第1接合层，31sh空隙，31m第2接合层，101电力用半导体装置。
具体实施方式
＜实施方式1＞
图1是表示本发明的实施方式1所涉及的传递模塑型的电力用半导体装置101的要部的结构的俯视图，图2是沿图1的A－A线的剖视图。此外，为了使说明变得明确，在图1及图2中，省略导线等配线部件的图示，在图1中，省略了对电力用半导体装置101的数个结构要素进行封装的树脂5的图示。
如图1所示，电力用半导体装置101具有：配线部件1；半导体元件2；接合层3，其将配线部件1和半导体元件2接合；以及树脂5。树脂5以使配线部件1的背面(与搭载有半导体元件2的面相反侧的面)露出的方式，将配线部件1、半导体元件2及接合层3覆盖，得到传递成型的构造。
配线部件1例如是电气导电性和导热性优异的铜(Cu)、铜合金、或者铝(Al)等金属的矩形块。此外，配线部件1并不限定于块，实际上能够应用各种形态的配线部件。例如，配线部件1也可以是被称为引线框架的板材、或者在具有绝缘性的陶瓷基材设置有金属配线图案的陶瓷绝缘基板等。
半导体元件2例如包含MOSFET(Metal Oxide Semiconductor Field-EffectTransistor)、SBD(Schottky Barrier diode)、或者IGBT(insulated gate bipolartransistor)等电力用半导体元件。另外，半导体元件2的材质包含硅(Si)、作为宽带隙半导体材料的碳化硅(SiC)、氮化镓(GaN)、金刚石等。
在本实施方式1中，作为开关元件而将Si的IGBT用于半导体元件2。例如，半导体元件2的厚度为0.1～0.4mm左右，半导体元件2的主面21具有矩形形状。在半导体元件2的背面22设置集电极(collector)电极(electrode)(未图示)，在主面21设置作为主电力电极的发射极电极(未图示)和作为控制电极的栅极电极。有时会在主面21侧接合配线部件等，或在配线部件1的下表面侧设置冷却部件。并且，设置有包含半导体元件2的电路的面，例如由树脂5封装。通常来说，就传递模塑型的电力用半导体装置而言，树脂5是热固性树脂。
接合层3包含金(Au)、银(Ag)、铜(Cu)、或者镍(Ni)等。例如，使用Au、Ag、Cu或者Ni等作为骨料的金属微粒分散于有机成分(有机分散材料)中而成为膏状的烧结性金属接合材料，形成接合层3。
烧结性金属接合材料所包含的纳米等级的金属微粒具有比较大的表面积，从而具有比较大的表面能，因此反应性变高。因此，就烧结性金属接合材料而言，能够利用其金属在比块状状态的熔点低的温度下通过扩散进行金属接合这样的现象。但是，仅就金属微粒而言，由于其反应性高，在常温下仅通过接触就会进行烧结即扩散接合。为了抑制如上所述的金属微粒凝聚而意外地进行烧结反应，烧结性金属接合材料还包含将金属微粒的表面覆盖的保护膜等保护材料。保护材料例如是用于将各个金属微粒以独立的状态分散保持的有机分散材料。另外，为了在接合工序中发生烧结反应，在烧结性金属接合材料中，添加有通过加热而与有机分散材料进行反应使金属微粒露出的分散材料捕捉材料，及对有机分散材料和分散材料捕捉材料的反应物质进行捕捉而挥发的挥发性有机成分等。此外，如果在加热的基础上进行加压，则能够使金属微粒彼此的接合强度提高，并且得到致密的接合层3。
此外，在本实施方式1中，接合层3包含第1接合层31s及第2接合层31m。第1接合层31s与树脂5相邻地设置，第2接合层31m是以被配线部件1、半导体元件2及第1接合层31s包围的方式设置的。而且，第1接合层31s具有由树脂5填充的空隙，第2接合层31m的空隙率比第1接合层31s的空隙率小。此外，空隙率相当于由第1接合层31s或者第2接合层31m与空隙构成的每单位体积的空隙的体积。
接下来，对本实施方式1所涉及的电力用半导体装置101的制造方法进行说明。图3是表示本实施方式1所涉及的电力用半导体装置101的主要制造工序的流程图，示出将配线部件1和半导体元件2接合的接合层3的制造工序和将它们传递成型为一体制品的工序。此外，为了使说明变得明确，在图3中，省略了向半导体元件2的配线工序等的图示。
首先，在步骤S1的接合材料涂敷工序中，例如通过丝网印刷法，在配线部件1之上涂敷烧结性金属接合材料。在涂敷烧结性金属接合材料的印刷中，使用印刷掩模和刮板，将膏状的烧结性金属接合材料供给至印刷掩模的表面，对膏进行刮擦而将膏涂敷于配线部件1之上。
在这里，能够通过局部地调整涂敷量而控制膏的空隙率，或调整后面记述的接合条件，由此控制接合后的接合层3中的空隙率。在本实施方式1中，将空隙率小的第2接合层31m和空隙率相对地大的第1接合层31s形成于各自的所期望的区域。通过如上所述使接合层3含有空隙，由此能够减少包含与焊料材料等接合材料相比更为昂贵的烧结性金属颗粒的烧结性金属接合材料的使用量。此外，作为减少烧结性金属接合材料的使用量的方法，存在减少涂敷面积，或在整个涂敷区域减少涂敷厚度的方法，但这些方法会导致散热性能的降低、电阻的增加及可靠性的降低，因此不优选。
接下来，在步骤S2的安置工序中，向在配线部件1之上涂敷的烧结性金属接合材料之上的适当的位置搭载半导体元件2。
在步骤S3的加压接合工序中，将通过至此为止的工序形成的构造体加热至适当的温度(例如，温度80℃、处理时间30分钟)而进行干燥，由此将烧结性金属接合材料的有机溶剂成分去除。然后，一边将半导体元件2压下而对烧结性金属接合材料进行加压，一边在将上述构造体加热至接合所需的温度(例如，温度200℃～350℃、处理时间30分钟)的状态下对该构造体进行加压(例如，10MPa)。由此，烧结性金属接合材料将配线部件1的接合面、半导体元件2的接合面和金属微粒彼此进行烧结接合。这样，形成包含空隙率大的第1接合层31s和空隙率小的第2接合层31m的接合层3。
最后，在步骤S4的传递成型工序中，除了配线部件1的背面以外，将通过接合层3对配线部件1和半导体元件2进行了接合的一体制品由树脂5覆盖，完成电力用半导体装置101。此时，向第1接合层31s的空隙填充树脂5。
就所完成的电力用半导体装置101而言，在动作时反复进行温度的上升及下降。因此，在金属烧结体和树脂的界面发生由线膨胀系数之差引起的剪切力。该力如果超过金属烧结体和树脂的粘接强度，则树脂从金属烧结体剥离。
与此相对，在本实施方式1中，在传递成型时，向空隙率大的第1接合层31s的空隙填充树脂5。根据如上所述的结构，通过锚固效应能够提高第1接合层31s的金属烧结体和树脂的粘接强度，能够抑制树脂5从金属烧结体的剥离。另外，由于在以往存在的工序(传递成型)中对树脂5进行填充，因此没有产生工时的增加，能够抑制成本上升。
此外，与半导体元件2的外周部正下方相比，在半导体元件2的中央部正下方，不易向接合层3的空隙填充树脂5。因此，空隙率大的第1接合层31s优选设置于半导体元件2的外周部正下方。另外，空隙率大的第1接合层31s与空隙率小的第2接合层31m相比导热率低，将半导体元件2的热散热至配线部件1的能力小。另一方面，半导体元件2在动作时发热，半导体元件2的中央部附近的温度与其外周部附近的温度相比容易上升。因此，从散热性的观点出发，优选如本实施方式1这样，将第1接合层31s设置于半导体元件2的外周部，将第2接合层31m设置于半导体元件2的中央部。如上所述，对接合层3的空隙率进行控制，由此能够得到在维持半导体元件2和配线部件1之间的散热性的同时，耐热性优异的可靠性高的电力用半导体装置。
接下来，对接合层3的空隙率进行说明。图4是表示接合层3和树脂5之间的接合强度与接合层3的空隙率的关系的示意图。
在接合层3的空隙率处于小于5％的范围a的情况下，树脂5不易进入至接合层3，无法充分地得到上述的锚固效应，无法使接合层3和树脂5的粘接强度充分地提高。另一方面，在接合层3的空隙率处于大于20％的范围c的情况下，接合层3本身的强度不足，在电力用半导体装置101的动作时龟裂在接合层3内部加深，因此可靠性降低。因此，在本实施方式1中，为了使接合层3和树脂5的粘接强度提高，且使电力用半导体装置101的可靠性提高，将接合层3所包含的第1接合层31s的空隙率控制为大于或等于5％而小于或等于20％的适当范围b。
接下来，对树脂5所包含的填料5f的尺寸和第1接合层31s的空隙31sh的尺寸之间的关系进行说明。图5及图6是将传递成型后的第1接合层31s放大的示意图。具体地说，图5是表示填料5f的最大宽度比第1接合层31s的空隙31sh的最大宽度即最大直径大的状态的图，图6是表示假定为填料5f的最大宽度小于或等于第1接合层31s的空隙31sh的最大宽度即最大直径的状态的图。
在图5的情况下，填料5f没有完全地进入至空隙31sh，因此能够向第1接合层31s填充树脂5。由此，能够充分地得到树脂5相对于第1接合层31s的锚固效应，能够使第1接合层31s和树脂5的粘接强度提高。另一方面，在图6的情况下，填料5f完全地进入至空隙31sh，因此无法向空隙31sh和填料5f的间隙填充树脂5。其原因在于，树脂5为高粘度，因此为了向空隙31sh填充树脂5，需要大于或等于一定尺寸的间隙。其结果，在图6的情况下，无法充分地得到树脂5相对于第1接合层31s的锚固效应，无法使第1接合层31s和树脂5的粘接强度充分地提高。
因此，在本实施方式1中，树脂5所包含的填料5f的最大宽度比第1接合层31s的空隙31sh的最小直径大。根据如上所述的结构，在大于或等于1个空隙31sh中，能够实现图5的状态，即得到锚固效应的状态。
＜实施方式1的总结＞
如以上所述，本实施方式1中的电力用半导体装置101具有将半导体元件2和配线部件1接合的接合层3，接合层3包含第1接合层31s，该第1接合层31s具有由树脂5填充的空隙31sh，树脂5所包含的填料5f的最大宽度比第1接合层31s的空隙31sh的最小直径大。根据如上所述的结构，能够提高树脂5相对于第1接合层31s的锚固效应，因此能够抑制成本上升，并提高接合层3和树脂5的粘接强度。因此，能够以低成本得到耐热性及可靠性优异的传递模塑型的电力用半导体装置101。
此外，在以上的说明中，说明了树脂5所包含的填料5f的最大宽度比第1接合层31s的空隙31sh的最小直径大的结构。但是并不限定于此，树脂5所包含的填料5f的最大宽度也可以比第1接合层31s的空隙31sh的最大直径大。根据如上所述的结构，并不是在一部分的空隙31sh中，而是在全部空隙31sh中，能够实现图5的状态，即得到锚固效应的状态。
另外，在以上的说明中，对如图1所示在1个配线部件1接合1个半导体元件2的结构进行了说明，但并不限定于此。例如，如图7所示，也可以是在1个配线部件1接合多个半导体元件2的结构。该结构能够将对各半导体元件2进行接合的接合材料一起涂敷，将各半导体元件2一起进行加压接合，因此从生产率的观点出发是优选的。
＜实施方式2＞
图8是表示本发明的实施方式2所涉及的传递模塑型的电力用半导体装置101的要部的结构的俯视图，图9是沿图8的A－A线的剖视图。下面，对本实施方式2所涉及的结构要素中的与上述的结构要素相同或者类似的结构要素，标注相同的参照标号，主要对不同的结构要素进行说明。
在实施方式1中，如图1所示作为金属烧结体的接合层3仅设置于半导体元件2的正下方。与此相对，在本实施方式2中，接合层3不仅设置于半导体元件2的正下方，还设置于半导体元件2的周围。即，第1接合层31s设置于配线部件1和半导体元件2之间及俯视观察时的半导体元件2的外侧。
＜实施方式2的总结＞
根据以上所述的实施方式2，与实施方式1相比能够增大第1接合层31s和树脂5的接触面积。因此，能够使具有由树脂5填充的空隙的第1接合层31s的体积增加，能够进一步提高接合层3和树脂5的粘接强度。
此外，本发明在其发明的范围内，能够将各实施方式及各变形例自由地组合，或将各实施方式及各变形例适当地变形、省略。

Claims (7)

1.一种电力用半导体装置，其具有：
配线部件；
半导体元件；
接合层，其将所述配线部件和所述半导体元件接合；以及
树脂，其将所述配线部件、所述半导体元件及所述接合层覆盖，
所述接合层包含第1接合层，该第1接合层与所述树脂相邻地设置，该第1接合层具有由所述树脂填充的空隙，
所述树脂所包含的填料的最大宽度比所述第1接合层的所述空隙的最小直径大。
2.根据权利要求1所述的电力用半导体装置，其中，
所述接合层还包含第2接合层，该第2接合层以被所述配线部件、所述半导体元件及所述第1接合层包围的方式设置，空隙率比所述第1接合层小。
3.根据权利要求1或2所述的电力用半导体装置，其中，
所述第1接合层设置于所述配线部件和所述半导体元件之间、及俯视观察时的所述半导体元件的外侧。
4.根据权利要求1至3中任一项所述的电力用半导体装置，其中，
所述第1接合层的空隙率大于或等于5％而小于或等于20％。
5.根据权利要求1至4中任一项所述的电力用半导体装置，其中，
所述接合层包含银、金、铜或者镍。
6.根据权利要求1至5中任一项所述的电力用半导体装置，其中，
所述树脂是热固性树脂。
7.根据权利要求1至6中任一项所述的电力用半导体装置，其中，
所述树脂所包含的填料的最大宽度比所述第1接合层的所述空隙的最大直径大。
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